JP2001233936A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an epoxy resin composition which has a reduced warpage and excellent solder cracking resistance after molding in an area mounting type semiconductor device and upon a soldering treatment. SOLUTION: The epoxy resin composition comprises (A) an epoxy resin comprising 30-100 wt.% of a glycidyl etherified epoxy resin contained in the whole epoxy resin, the etherified epoxy resin being made by mixing bisphenol F (a) and a biphenyl (b) which is a precursor of a crystalline epoxy resin, (B) a resin curing agent containing 30-100 wt.% of a naphthol aralkyl resin curing agent in the whole resin curing agent, (C) an inorganic filler and (D) a curing accelerator as essential components, and the weight ratio of the bisphenol F (a)/the biphenyl (b) being 0.1-19, the equivalent ratio of an epoxy group in the whole epoxy resin/a phenolic hydroxyl group in the whole resin curing resin agent being 0.5-2, a content of the inorganic filler (C) being 250-1400 pts.wt. per 100 pts.wt. of the sum of the whole epoxy resin and the whole resin curing agent, and a content of the curing accelerator being 0.4-20 pts.wt. per 100 pts.wt. of the sum of the whole epoxy resin and the whole resin curing agent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation, which has a small warpage after molding and soldering in an area mounting type semiconductor device and has excellent solder crack resistance.
And a semiconductor device.

[0002]

2. Description of the Related Art In recent years, in the market trend of miniaturization, weight reduction and high functionality of electronic equipment, high integration of semiconductors has been progressing year by year and surface mounting of semiconductor devices has been promoted. A mounting type semiconductor device has been developed, and has begun to shift from a semiconductor device having a conventional structure. A ball grid array (hereinafter, referred to as BGA) or a chip size package (hereinafter, referred to as CSP) pursuing further miniaturization is representative of the area mounting type semiconductor device, and these are typically represented by conventional QFP and SOP. The surface mount type semiconductor device has been developed in order to meet the demand for higher pin count and higher speed, which is approaching the limit. As a structure, a semiconductor element is mounted on one side of a rigid circuit board represented by a bismaleimide / triazine (hereinafter referred to as BT) resin / copper circuit board or a flexible circuit board represented by a polyimide resin film / copper circuit board. And only the semiconductor element mounting surface, that is, one surface of the substrate is molded and sealed with an epoxy resin composition or the like. Also, on the surface opposite to the semiconductor element mounting surface of the substrate, solder balls are formed two-dimensionally in parallel and joined to a circuit board on which a semiconductor device is mounted. Further, as a substrate on which a semiconductor element is mounted, a structure using a metal substrate such as a lead frame has been devised in addition to the organic circuit substrate.

[0003] The structure of these area mounting type semiconductor devices adopts a single-sided sealing configuration in which only the semiconductor element mounting surface of the substrate is sealed with a resin composition and the solder ball forming surface side is not sealed. Very rarely, on a metal substrate such as a lead frame, a sealing resin layer of about several tens of μm may be present even on a surface on which a solder ball is formed, but on a semiconductor element mounting surface, several hundred μm
Since a sealing resin layer having a thickness of about several mm is formed, substantially single-sided sealing is achieved. Therefore, due to the mismatch of thermal expansion and thermal contraction between the organic substrate or the metal substrate and the cured product of the resin composition, or the influence of the curing shrinkage at the time of molding and curing the resin composition, these semiconductor devices are used. Warpage tends to occur immediately after molding. When soldering is performed on a circuit board on which these semiconductor devices are mounted, a heating step of 200 ° C. or more is performed. At this time, the semiconductor device is warped, and a large number of solder balls are not flattened. There is also a problem that the semiconductor device floats up from the circuit board on which the device is mounted, and the electrical connection reliability is reduced.

In a semiconductor device in which substantially only one surface on a substrate is sealed with a resin composition, in order to reduce warpage, the linear expansion coefficient of the substrate and the linear expansion coefficient of a cured product of the resin composition are made close to each other; In addition, two methods for reducing the curing shrinkage of the resin composition are important. As an organic substrate, B
Resins having a high glass transition temperature (hereinafter, referred to as Tg) such as T resins and polyimide resins are widely used, and have a Tg higher than around 170 ° C., which is the molding temperature of the resin composition. Therefore, in the cooling process from the molding temperature to room temperature, since the shrinkage occurs only in the α1 region of the organic substrate,
If the resin composition also has a high Tg, and α1 is the same as that of the circuit board, and if the curing shrinkage is zero, the warpage is considered to be almost zero. Therefore, Tg is increased by a combination of a triphenolmethane-type epoxy resin and a triphenolmethane-type phenol resin, and α is determined by the amount of the inorganic filler.
A method of combining 1 has already been proposed.

When soldering is performed by soldering by means such as infrared reflow, vapor phase soldering, or solder immersion, the moisture present inside the semiconductor device due to the cured product of the resin composition and the moisture absorbed from the organic substrate is heated to a high temperature. Cracks may occur in the semiconductor device due to stress caused by rapid vaporization in the semiconductor device, or peeling may occur at the interface between the semiconductor element mounting surface of the substrate and the cured product of the resin composition. Along with low stress and low moisture absorption, high adhesion to the substrate is also required. A resin composition containing a triphenolmethane-type epoxy resin and a triphenolmethane-type phenol resin as resin components has been used in conventional area-mounted semiconductor devices such as BGA and CSP to reduce warpage.
The cured product of this resin composition has a high Tg, curability, and properties having excellent flexural strength when heated. However, the water absorption of the cured product is high, and the melt viscosity of the resin composition is relatively high. , There is a limit to high filling of inorganic filler, insufficient moisture absorption,
There was a problem in solder crack resistance.

On the other hand, in a conventional surface mount type semiconductor device such as QFP or SOP, a crystalline epoxy resin such as a biphenyl type epoxy resin is used in order to prevent cracks at the time of solder mounting and peeling at interfaces between materials. Using
There were problems that the flexural strength at the time of heating was low and curing was slow as compared with a cured product of a resin composition using a triphenolmethane-type epoxy resin. Therefore, in order to obtain a resin composition with a small warpage, excellent curability, excellent bending strength when heated, and low moisture absorption and excellent solder crack resistance, in order to take advantage of the characteristics of the triphenolmethane epoxy resin and the crystalline epoxy resin, When using an appropriate amount of both epoxy resins at the time of manufacturing the resin composition, or using a pre-melted mixture of both epoxy resins, the warpage when using a triphenolmethane type epoxy resin is small, curability, The feature of being excellent in bending strength under heat and the feature of being excellent in low moisture absorption and solder crack resistance when using a crystalline epoxy resin could not be achieved at the same time, which was insufficient.

[0007]

SUMMARY OF THE INVENTION The present invention has a small warpage after molding or soldering in an area mounting type semiconductor device.
An object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation excellent in solder crack resistance and a semiconductor device.

[0008]

Means for Solving the Problems The present invention provides [1] (A)
Bisphenol Fs (a) represented by the general formula (1),
Phenols (b) which are precursors of crystalline epoxy resins
(B) an epoxy resin containing 30 to 100% by weight of glycidyl etherified epoxy resin in the total epoxy resin, and (B) a resin curing agent represented by the general formula (2) in an amount of 30 to 100% by weight in the total resin curing agent. % Of resin curing agent, (C)
An inorganic filler and (D) a curing accelerator are essential components, and the weight ratio (a / b) between (a) and (b) is 0.1 to 1
9. The equivalent ratio of the epoxy group of the total epoxy resin to the phenolic hydroxyl group of the total resin curing agent is 0.5 to 2, and the content of the inorganic filler (C) is the sum of the total epoxy resin and the total resin curing agent. Semiconductor, wherein the content of the curing accelerator is 0.4 to 20 parts by weight per 100 parts by weight of the total amount of the total epoxy resin and the total resin curing agent at 250 to 1,400 parts by weight per 100 parts by weight. Epoxy resin composition for

Embedded image (However, R ₁ in the formula represents an alkyl group having 1 to 6 carbon atoms, which may be the same or different.
Is an integer from 0 to 4)

[0009]

Embedded image (Where n is an average value and a positive number of 1 to 10) [2] A semiconductor element is mounted on one surface of the substrate, and substantially only one surface on the substrate surface side on which the semiconductor element is mounted is [1]. A semiconductor device characterized by being sealed using the epoxy resin composition according to the above item, which has a small warpage after molding or soldering in an area-mounted semiconductor element, Excellent cracking properties.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin used in the present invention comprises a low-viscosity, low-molecular-weight bisphenol F (a) and a phenol (b), which is a precursor of a crystalline epoxy resin, in a weight ratio (a / A resin obtained by glycidyl etherification of a mixture in which b) is 0.1 to 19 (hereinafter, referred to as a mixed phenol), which has a low viscosity derived from a bisphenol F type epoxy resin, and is lower than a conventional biphenyl type epoxy resin. Further, since the resin has a lower melt viscosity when heated, the fluidity is improved as compared with the resin composition mainly using a biphenyl type epoxy resin, and the inorganic filler can be more highly filled. Since the material can be made to absorb less moisture, it contributes to improving the solder crack resistance. Glycidyl etherification with a phenol, which is a precursor of an epoxy resin having high crystallinity, can be handled as a solid at room temperature.

Bisphenol F represented by the general formula (1)
As the class (a), there is no particular limitation on the molecular weight and viscosity, but it is preferable that the molecular weight is as low as possible. More preferably, it is unsubstituted in the general formula (1) and the two hydroxyl groups are p-oriented. Certain 4,4'-dihydroxybisphenols. This greatly contributes to lowering the viscosity, and when glycidyl etherification is used because of no substitution, an epoxy resin having high reactivity can be obtained. Examples of the phenols (b) that are precursors of the crystalline epoxy resin include biphenyl-type phenols of the general formula (3) and stilbene-type phenols of the general formula (4).

Embedded image (Where R ₂ in the formula is an alkyl group having 1 to 6 carbon atoms,
They may be the same or different from each other. m
Is an integer of 0 to 4. )

[0012]

Embedded image (However, R ₃ in the formula is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, which may be the same or different from each other. R ₄ is an alkyl group having 1 to 6 carbon atoms, and May be the same or different, and m is 0 to 4
Integer. )

The biphenyl-type phenols of the general formula (3) include, for example, 4,4'-dihydroxybiphenyl, 4,4'-dihydroxy-3,3 ', 5,5'-tetramethylbiphenyl, 4,4 '-Dihydroxy-3,
3′-ditert-butyl-6,6′-dimethylbiphenyl, 2,2′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylbiphenyl, 4,4′-
Dihydroxy-3,3'-ditert-butyl-5,
5'-dimethylbiphenyl, 4,4'-dihydroxy-
3,3 ′, 5,5′-tetratert-butylbiphenyl and the like (including isomers having different substitution positions).

The stilbene type phenols of the general formula (4) include, for example, 3-tert-butyl-4,4'-
Dihydroxy-5,3'-dimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-3 ', 6-
Dimethyl stilbene, 3-tert-butyl-2,4 '
-Dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-
3 ′, 5 ′, 6-trimethylstilbene, 3-tert-butyl-4,4′-dihydroxy-3 ′, 5,5′-
Trimethylstilbene, 4,4'-dihydroxy-3,
3'-dimethylstilbene, 4,4'-dihydroxy-
3,3 ′, 5,5′-tetramethylstilbene, 4,
4'-dihydroxy-3,3'-ditertiarybutylstilbene, 4,4'-dihydroxy-3,3'-ditertiarybutyl-6,6'-dimethylstilbene, 2,
2'-dihydroxy-3,3'-ditert-butyl-
6,6′-dimethylstilbene, 2,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,2′-dihydroxy-3,3 ′,
5,5′-tetramethylstilbene, 4,4′-dihydroxy-3,3′-ditert-butyl-5,5′-dimethylstilbene, 4,4′-dihydroxy-3,
3 ', 5,5'-tetratert-butylstilbene and the like (including isomers having different substitution positions).

Among them, 4,4'-dihydroxybiphenyl and 4,4'-dihydroxy-3,3 ', 5,5'-tetramethyl are preferred in view of availability, performance, raw material price and the like. Biphenyl, (the above two phenols,
Hereinafter referred to as group a), 3-tert-butyl-2,4'-
Dihydroxy-3 ′, 5 ′, 6-trimethylstilbene, 3-tert-butyl-4,4′-dihydroxy-
3 ′, 5 ′, 6-trimethylstilbene, 3-tert-butyl-4,4′-dihydroxy-3 ′, 5,5′-
Trimethylstilbene (the above three phenols are hereinafter referred to as group b), 4,4′-dihydroxy-3,3 ′,
5,5'-tetramethylstilbene, 4,4'-dihydroxy-3,3'-ditert-butyl-6,6'-dimethylstilbene, 2,2'-dihydroxy-3,3 '
-Ditertiarybutyl-6,6'-dimethylstilbene, 2,4'-dihydroxy-3,3'-ditertiarybutyl-6,6'-dimethylstilbene, 2,2'-dihydroxy-3,3 ', 5 , 5'-tetramethylstilbene or 4,4'-dihydroxy-3,3'-ditert-butyl-5,5'-dimethylstilbene (6 or more
The phenols are preferably one or more selected from group c). In particular, biphenyl-type phenols have a large viscosity lowering effect and are highly reactive 4,4 ′.
It preferably contains -dihydroxybiphenyl. In the case of stilbene-type phenols, the melting point tends to be higher due to the high crystallinity of each of the groups b and c alone. However, by forming a mixture of one or more kinds selected from each, the glycidyl ether compound It is preferable to use a mixture since it has the effect of lowering the melting point. The mixing ratio and the mixing method are not limited.

Bisphenol F represented by the general formula (1)
The method of mixing the compound (a) with the phenol (b), which is a precursor of the crystalline epoxy resin, is not particularly limited, but it is preferable to uniformly mix them by a method such as dissolution with a solvent or melt mixing by heating. This is because even if heterogeneously mixed ones are glycidyl-etherified, they have the same properties as the mixture of glycidyl-etherified ones alone, so the expected low viscosity and solidification at room temperature are not expected. It is. Bisphenol F represented by the general formula (1)
The mixing ratio of the compound (a) and the phenol (b) which is a precursor of the crystalline epoxy resin is from 0.1 to 0.1 by weight (a / b).
19 is preferred, and more preferably 0.5-9.
If it is less than 0.1, the effect of lowering the viscosity derived from the bisphenol F represented by the general formula (1) is undesirably small. On the other hand, if it exceeds 19, the workability is not improved by the crystalline epoxy resin, so that it is not preferable.

The method for synthesizing the epoxy resin of the present invention is not particularly limited. For example, after dissolving a mixed phenol in an excess of epichlorohydrin, sodium hydroxide,
5 in the presence of an alkali metal hydroxide such as potassium hydroxide
A method in which the reaction is performed at 0 to 150 ° C, preferably 60 to 120 ° C for 1 to 10 hours, may be mentioned. After completion of the reaction, excess epichlorohydrin is distilled off, and the residue is dissolved in a solvent such as toluene or methyl isobutyl ketone, filtered, washed with water to remove inorganic salts, and then the solvent is distilled off to remove the desired epoxy compound. A resin can be obtained. It is desirable that chlorine ions, sodium ions and other free ions of the produced epoxy resin be as small as possible.

The properties of the epoxy resin used in the present invention can be maximized by adjusting the amount thereof. The mixing amount is 3% in the total epoxy resin.
When the amount is 0 to 100% by weight and less than 30% by weight, the warpage increases during the soldering process, and the fluidity decreases. The epoxy resin that can be used in combination is not particularly limited, and includes, for example, ortho-cresol novolak type epoxy resin, bisphenol A type epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, and the like.
These may be used alone or as a mixture.

Since the resin curing agent represented by the general formula (2) used in the present invention has at least two rigid naphthol skeletons in one molecule, it has a characteristic that the cured product of the resin composition has a low water absorption. Have. Furthermore, as compared with a resin curing agent having a β-naphthol skeleton, the resin composition has a smaller molding shrinkage ratio at the time of curing and has a characteristic that the Tg of the cured product is less likely to be reduced. The warpage of the object is small. Further, since the resin composition has a hydrophobic aromatic ring, the water absorption is relatively low. Therefore, a semiconductor device using the resin composition of the present invention can have high reliability even under soldering during mounting. The characteristics of the resin curing agent of the general formula (2) used in the present invention can be maximized by adjusting the amount of the resin curing agent. The compounding amount is 30 to 100% by weight in the total resin curing agent, and if it is less than 30%, the warpage increases during soldering, and the moisture resistance reliability is undesirably reduced. The resin curing agent that can be used in combination is not particularly limited, but includes, for example, a phenol novolak resin, a cresol novolak resin, a dicyclopentadiene-modified phenol resin, a phenol aralkyl resin, a terpene-modified phenol resin, a triphenolmethane compound, and the like. May be used alone or as a mixture. Furthermore, even if the equivalent ratio of the epoxy group of the epoxy resin to the phenolic hydroxyl group of the resin curing agent is 0.5 to 2, and the equivalent ratio is less than 0.5 or greater than 2, It is not preferable because the properties, the moisture resistance reliability and the Tg of the cured product decrease.

The type of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused crushed silica powder, fused spherical silica powder, crystalline silica powder, secondary aggregated silica powder, alumina, titanium white, aluminum hydroxide and the like are mentioned, and fused spherical silica is particularly preferred. As the shape of the spherical silica, it is preferable that the spherical silica be infinitely spherical and the particle size distribution be broad in order to improve fluidity. The content of the inorganic filler is preferably 250 to 1400 parts by weight per 100 parts by weight of the total amount of the total epoxy resin and the total resin curing agent in view of the balance between moldability and reliability. If the amount is less than 250 parts by weight, flame retardancy cannot be obtained and 1
If the amount exceeds 400 parts by weight, a problem of moldability occurs, which is not preferable. It is preferable that the inorganic filler used in the present invention is sufficiently mixed in advance. If necessary, the inorganic filler may be treated with a coupling agent, an epoxy resin or a phenol resin in advance, and used as a treatment method. There is a method of adding to a material and treating using a mixer.

As the curing accelerator used in the present invention, any one can be used as long as it promotes the curing reaction between the epoxy group and the phenolic hydroxyl group, and those generally used for a sealing material can be widely used. For example, 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, benzyldimethylamine, 2-methylimidazole and the like may be used alone or in combination. The epoxy resin composition of the present invention comprises a curing accelerator in an amount of 0.4 to 20 per 100 parts by weight of the total amount of the total epoxy resin and the total resin curing agent.
Contains parts by weight. If the amount is less than 0.4 parts by weight, sufficient curability may not be obtained during heat molding. On the other hand, when the amount exceeds 20 parts by weight, curing may be too fast, and poor filling may occur due to a decrease in fluidity during molding.

The epoxy resin composition of the present invention comprises (A)
In addition to the component (D), if necessary, an inorganic ion exchanger such as bismuth oxide hydrate, a coupling agent such as γ-glycidoxypropyltrimethoxysilane, a coloring agent such as carbon black and red iron, silicone oil, A low stress component such as silicone rubber, a natural wax, a synthetic wax, a higher fatty acid and a metal salt thereof, or a mold release agent such as paraffin, and various additives such as an antioxidant may be appropriately compounded. The epoxy resin composition of the present invention comprises (A)
(D) A component, other additives, etc. are mixed at normal temperature using a mixer, melt-kneaded with a kneader such as a roll, kneader, extruder or the like, cooled, and pulverized. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold.

[0023]

EXAMPLES The present invention will be described in more detail with reference to the following Examples, which should not be construed as limiting the present invention. The abbreviations and structures of the epoxy resin and the resin curing agent used in Examples and Comparative Examples are collectively shown below. The structural formula (5) of bisphenol F used for synthesizing the epoxy resins A to D of Examples and Comparative Examples and the structural formula (6) of phenol which is a crystalline epoxy resin precursor are shown. Formulas (5) and (6) were obtained by glycidyl etherification in the usual manner at the mixing ratios shown in Table 1. The characteristics are shown in Table 1.

Embedded image

[0024]

Embedded image

[0025]

[Table 1]

Epoxy resin 1: an epoxy resin having the formula (7) as a main component (melting point: 105 ° C., epoxy equivalent: 19)
1 g / eq) Epoxy resin 2: epoxy resin of formula (8) (softening point:
59 ° C, epoxy equivalent: 171 g / eq) ・ Phenol resin 1: phenolic resin of formula (9) (softening point: 87 ° C, hydroxyl equivalent: 210 g / eq) ・ Phenolic resin 2: phenolic resin of formula (10) (softening) Point: 110 ° C., hydroxyl equivalent: 98 g / eq) Phenolic resin 3: phenolic resin of formula (11) (softening point: 70 ° C., hydroxyl equivalent: 170 g / eq)

Embedded image

[0027]

Embedded image

Example 1 Epoxy resin 1 4.88 parts by weight Phenol resin 1 6.32 parts by weight Fused spherical silica (average particle size 15 μm, specific surface area 2.2 m ² / g) 86.00 parts by weight Triphenylphosphine 0. 19 parts by weight Carbon black 0.28 parts by weight Carnauba wax 0.47 parts by weight Brominated phenol novolak type epoxy resin (epoxy group equivalent 275 g / eq) 0.93 parts by weight Antimony trioxide 0.93 parts by weight at room temperature using a mixer Mix, 90 ° C and 45 ° C
The mixture was kneaded using a roll, cooled and pulverized to obtain a resin composition. The obtained resin composition was evaluated by the following method.

Spiral flow: EMMI-1-66
The measurement was performed at a mold temperature of 175 ° C., an injection pressure of 70 kg / cm ² , and a curing time of 2 minutes using a mold for spiral flow measurement according to the above. The unit is cm. Water absorption: Using a transfer molding machine, mold temperature 175 ° C, injection pressure 75 kg /
A molded product having a diameter of 50 mm and a thickness of 3 mm was formed in 2 cm ² and a curing time of 2 minutes, and post-cured at 175 ° C. for 8 hours. The obtained molded product was subjected to 168 hours in an environment of 85 ° C. and 60% relative humidity. The sample was allowed to stand, the weight change was measured, and the water absorption was determined. The unit is% by weight. Package warpage: using a transfer molding machine, mold temperature 180 ° C., injection pressure 75 kg / cm ² ,
225pBGA in 2 minutes curing time (substrate is 0.36m thick)
m, bismaleimide / triazine resin / glass cloth substrate, package size 24 × 24 mm, thickness 1.17
mm, silicon chip size 9 × 9mm, thickness 0.3
5mm, the chip and the bonding pad of the circuit board are 2
Bonding is performed with a gold wire having a diameter of 5 μm. ) Was molded. Further post-curing was performed at 175 ° C. for 8 hours. After cooling to room temperature, the displacement in the height direction was measured diagonally from the gate of the package using a surface roughness meter, and the largest value of the displacement difference was defined as the amount of warpage. The unit is μm. Solder crack resistance: 225 pBGA using a transfer molding machine at a mold temperature of 180 ° C., an injection pressure of 75 kg / cm ² , and a curing time of 2 minutes.
(The substrate is 0.36mm thick, bismaleimide / triazine resin / glass cloth substrate, package size is 24 ×
The silicon chip is 24 mm in thickness, 1.17 mm in thickness, and the size of the silicon chip is 9 × 9 mm, and the thickness is 0.35 mm. ) Was molded. Further, the 10 packages that were post-cured at 175 ° C. for 8 hours were treated at 60 ° C. and a relative humidity of 60% for 120 hours and at 85 ° C. and a relative humidity of 60% for 168 hours, and then subjected to IR reflow treatment (240 ° C.) separately. I went to. After the treatment, the presence of peeling and cracks in the inside was observed with an ultrasonic flaw detector, and the number of defective packages was counted. When the number of defective packages is n, n / 10 is displayed.

Examples 2 to 5 and Comparative Examples 1 to 6 In the same manner as in Example 1, the resin compositions obtained by blending according to the compositions shown in Tables 2 and 3 were evaluated. The evaluation results are shown in Tables 2 and 3. The ortho-cresol novolak type epoxy resin used in Example 4 had an epoxy equivalent of 19
The hydroxyl equivalent of the phenol novolak resin used in Example 5 was 104 g / eq.

[0031]

[Table 2]

[0032]

[Table 3]

The epoxy resin composition of the present invention has a small warpage after molding and at the time of soldering, and has a property of being excellent in solder crack resistance. Are better.

Claims (2)

[Claims] (A) A glycidyl etherified epoxy resin obtained by mixing a bisphenol F (a) represented by the general formula (1) and a phenol (b) which is a precursor of a crystalline epoxy resin is used in total. Epoxy resin containing 30 to 100% by weight in epoxy resin, (B) resin curing agent containing 30 to 100% by weight of resin curing agent represented by general formula (2) in total resin curing agent, (C) inorganic filler , And (D) a curing accelerator as an essential component, and the weight ratio of (a) to (b) (a /
b) is 0.1 to 19, and the equivalent ratio of the epoxy group of the total epoxy resin to the phenolic hydroxyl group of the total resin curing agent is 0.5 to 2
The content of the inorganic filler (C) is from 250 to 14 per 100 parts by weight of the total amount of the total epoxy resin and the total resin curing agent.
At 00 parts by weight, the content of the curing accelerator is 0.4 to 2 per 100 parts by weight of the total amount of the total epoxy resin and the total resin curing agent.
An epoxy resin composition for semiconductors, which is 0 parts by weight. Embedded image (However, R ₁ in the formula represents an alkyl group having 1 to 6 carbon atoms, which may be the same or different.
Is an integer of 0 to 4) (However, n is an average value and a positive number of 1 to 10) 2. A semiconductor device is mounted on one surface of a substrate, and substantially only one surface on the substrate surface side on which the semiconductor device is mounted is sealed with the epoxy resin composition according to claim 1. A semiconductor device characterized by the above-mentioned.