JP2001230172A - Substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing device which can quickly keep the substrate temperature on a plate, realize a uniform temperature, and has a simplified and compact structure. SOLUTION: A plurality of heat pipes 75 are arranged in a cooling plate 71, and a heat exchanger 80 is provided at the end of the heat pipes 75. The heat exchanger 80 is provided with a cooling medium contact part 81 which brings the cooling medium into contact with the end of the heat pipes 75, where the heat is exchanged between the heat pipes 75 and cooling medium.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for performing thermal processing on a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a semiconductor device photolithography process, a semiconductor wafer (hereinafter simply referred to as a "wafer") is used.
A resist is applied to the resist film, and the formed resist film is exposed according to a predetermined circuit pattern, and the exposed pattern is developed to form a circuit pattern on the resist film.

Conventionally, a resist coating and developing system has been used to carry out such a series of steps. In this resist coating and developing processing system, wafers are taken out one by one from a cassette in a cassette station and transported to a processing station. In the processing station, first, a hydrophobic treatment is performed in an adhesion processing unit, then a resist is applied in a resist coating processing unit, and then a pre-bake processing is performed. Thereafter, the wafer is transferred from the processing station to the exposure apparatus via the interface unit, and after the exposure apparatus exposes a predetermined pattern, the wafer is again loaded into the processing station via the interface unit. The exposed wafer is subjected to a post-exposure bake process, and then subjected to a development process in a development processing unit. Then, the developed wafer is subjected to a post-bake process. Thus, a series of processes is completed, and the wafer is transferred to the cassette station and stored in the wafer cassette.

[0004] Such a series of processing includes processing steps involving heating of the substrate, such as adhesion processing, pre-baking processing, post-exposure baking processing, and post-baking processing, as described above. A cooling process is performed after these steps so as not to adversely affect the process.

[0005] Such a cooling process is performed by a cooling unit that places a wafer on or close to a cooling plate having a cooling mechanism and performs a cooling process. Conventionally, in this type of cooling unit, a bent cooling water passage is formed in the cooling plate by casting or the like, and cooling water is circulated in the cooling water passage to cool the cooling plate to a predetermined temperature.

[0006] On the other hand, the post-exposure bake treatment is usually performed in order to promote a chemical reaction after exposure when a chemically amplified resist is used, and strictly controls not only the processing temperature but also the processing time. Therefore, a hot plate unit having both a heating plate and a cooling plate is used so that the plate can be cooled immediately after being heated to a predetermined temperature by the heating plate. The cooling plate used in such a unit also has a structure in which a cooling water passage is formed in the cooling plate by casting or the like, similarly to the above-described structure.

[0007]

However, in the case of such a structure in which the cooling water is circulated in the cooling water passage, it takes a long time to make the cooling temperature of the cooling plate uniform over the entire surface, and furthermore, There is a disadvantage that the temperature tends to vary. Also, since the pressure loss in the cooling water passage is large, a large cooling water circulation pump is required, and since the bent cooling water passage is formed by casting or the like, the cooling plate has a complicated structure and has to be thick. I can't get it.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and enables a substrate on a plate to be quickly maintained at a desired temperature, high temperature uniformity, and a simple and compact structure. It is an object to provide a simple substrate processing apparatus.

[0009]

SUMMARY OF THE INVENTION The present invention provides, firstly, a substrate processing apparatus for performing thermal processing on a substrate at a predetermined temperature, wherein the plate has a surface close to or placed on the surface thereof; There is provided a substrate processing apparatus comprising: a heat pipe disposed in the plate; and a heat exchanging unit for exchanging heat by bringing a thermal medium into contact with one end of the heat pipe.

[0010] Secondly, the present invention relates to a substrate processing apparatus for cooling a substrate to a predetermined temperature, a plate for cooling the substrate by approaching or placing the substrate on the surface thereof, and a heat pipe disposed in the plate. And a heat exchanging unit for exchanging heat by bringing a cooling medium into contact with one end of the heat pipe.

A third aspect of the present invention is a substrate processing apparatus capable of heating a substrate and cooling the substrate, the substrate being placed on or close to a heating plate, and a heating section for heating the substrate. A plate that is provided separately from the processing unit and cools the substrate by approaching or placing the substrate on the surface thereof, a heat pipe disposed in the plate, and a cooling medium contacting one end of the heat pipe. And a transfer means for transferring a substrate between the heating plate and the plate.

According to the present invention, the heat pipe is arranged in the plate on which the substrate is placed close to or on which the substrate is to be placed, and a heat exchange section for exchanging heat by contacting a thermal medium with one end of the heat pipe is provided. However, the heat pipe has a function to easily transport a large amount of heat from one end to the other by utilizing the evaporation phenomenon and condensation phenomenon of the working fluid filled inside, and when there is a high and low temperature in it Has the function of transporting heat quickly to equalize the temperature, so that the heat of the thermal medium in the heat exchange section can be quickly transported to the plate, and the substrate on the plate is quickly maintained at the desired temperature. In addition, the temperature of the plate can be made uniform by the temperature uniforming action of the heat pipe, and the temperature uniformity of the substrate can be improved. Further, since only the heat pipe is provided in the plate, the structure can be simple and compact.

In particular, when the cooling medium is brought into contact with one end of the heat pipe in the heat exchange section as in the second and third aspects of the present invention, the cooling heat from the cooling medium quickly and in large amounts. Since the plate is supplied to the plate via the heat pipe, the substrate can be cooled more quickly than when the cooling water flows through the conventional curved cooling water passage, and the cooling water passage is cooled by the uniform heat pipe temperature. The temperature uniformity of the plate can be improved as compared with the case of flowing water, and the temperature uniformity of the substrate can be further improved. In addition, since it is only necessary to provide a heat pipe in the plate, the structure can be simplified as compared with the conventional case in which a curved cooling channel is formed in the cooling plate, and the cooling channel formation by casting or the like is unnecessary. In addition, since a large circulation pump is not required, the cooling plate can be made thinner and the unit can be made more compact.

[0014]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic plan view showing a resist coating and developing system to which a substrate processing apparatus according to an embodiment of the present invention is applied, FIG. 2 is a front view thereof, and FIG. 3 is a rear view thereof.

The processing system 1 includes a cassette station 10 as a transfer station, a processing station 11 having a plurality of processing units, and an exposure apparatus (not shown) provided adjacent to the processing station 11. And an interface unit 12 for delivering W.

The cassette station 10 includes a semiconductor wafer (hereinafter simply referred to as a wafer) W as an object to be processed.
In a state where a plurality of wafers are loaded in the wafer cassette CR in units of, for example, 25 wafers, the wafer W is loaded into or out of this system from another system, or the wafer W is transferred between the wafer cassette CR and the processing station 11
Is to be transported.

In the cassette station 10, as shown in FIG.
A plurality of (four in the figure) positioning projections 20a along the direction
The wafer cassette CR can be placed at a position of the projection 20a in a line with the respective wafer entrances facing the processing station 11 side. In the wafer cassette CR, the wafers W are arranged in a vertical direction (Z direction). Also, the cassette station 10
A wafer transfer mechanism 21 is provided between the wafer cassette mounting table 20 and the processing station 11. The wafer transfer mechanism 21 has a wafer transfer arm 21a that is movable in the cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W therein (Z direction). Of the wafer cassette CR can be selectively accessed. Further, the wafer transfer arm 21a is configured to be rotatable in the θ direction, and has access to an alignment unit (ALIM) and an extension unit (EXT) belonging to a _third processing unit G3 on the processing station 11 side described later. I can do it.

The processing station 11 is provided with a plurality of processing units for performing a series of steps for performing a coating / phenomenon on the semiconductor wafer W, and these are arranged at predetermined positions in multiple stages. The semiconductor wafer W
Are processed one by one. This processing station 11
As shown in FIG. 1, a transfer path 22a is provided at the center, and a main wafer transfer mechanism 22 is provided therein.
All processing units are arranged around 2a. The plurality of processing units are divided into a plurality of processing units, and each processing unit includes a plurality of processing units arranged in multiple stages along a vertical direction.

As shown in FIG. 3, the main wafer transfer mechanism 22 is provided with a wafer transfer device 46 inside a cylindrical support 49 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 49 is rotatable by the rotational driving force of a motor (not shown), and accordingly, the wafer transfer device 4
6 is also rotatable integrally.

The wafer transfer device 46 includes a plurality of holding members 48 that are movable in the front-rear direction of the transfer base 47, and the transfer of the wafer W between the processing units is realized by these holding members 48. .

Further, as shown in FIG.
, Four processing units G₁, G ₂, G₃, G₄But
It is actually arranged around the EHA transport path 22a,
Part G ₅Can be arranged as needed.

Of these, the first and second processing units G
₁ and G ₂ are arranged in parallel on the front side of the system (front side in FIG. 1), the third processing unit G ₃ is arranged adjacent to the cassette station 10, and the fourth processing unit G ₄ is connected to the interface unit 12. They are located adjacent to each other. In addition, the fifth
The processing unit G ₅ of which is capable disposed on the rear portion.

The first processing unit _{G 1} and the second processing section _{G 2}
In each of them, a resist coating unit (COT) for coating a resist on a wafer W and a developing unit (DEV) for developing a resist pattern are stacked in two stages from the bottom.

[0024] In the third processing unit G ₃ are, as shown in FIG. 3, the oven-type processing units of the wafer W is placed on a mounting table SP performs predetermined processing are multi-tiered.
That is, a cooling unit (CO
L), an adhesion unit (AD) for performing a so-called hydrophobizing process for improving the fixability of the resist, an alignment unit (ALIM) for positioning, and a wafer W
Extension unit (EXT) for loading and unloading
Four hot plate units (HP) for performing a heating process on the wafer W before and after the exposure process and after the development process are stacked in eight stages from the bottom. In addition,
A cooling unit (COL) is provided instead of the alignment unit (ALIM), and the cooling unit (C
OL) may have an alignment function.

[0025] The fourth processing unit G ₄ also, the oven-type processing units are multi-tiered. That is, a cooling unit (COL), an extension cooling unit (EXTCOL) which is a wafer loading / unloading section provided with a cooling plate, and an extension unit (EX
T), a cooling unit (COL), two hot plate units with cooling plates (CHP), and two normal hot plate units (HP) are stacked in eight stages from the bottom.

If the [0026] providing a fifth processing unit G ₅ on the rear side of the main wafer transfer mechanism 22 is adapted to be movable laterally relative to the main wafer transfer mechanism 22 along the guide rail 25. Therefore, even in the case where the processing section G ₅ of the fifth, the space portion by sliding along this guide rail 25 is secured, the main wafer transfer mechanism 22
Maintenance work can be easily performed from behind.

The interface section 12 has the same length as the processing station 11 in the depth direction (X direction). As shown in FIGS. 1 and 2, a portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 12, and a peripheral exposure device 23 is arranged at the rear. The wafer transfer mechanism 24 is provided at the center. The wafer transfer mechanism 24 has a wafer transfer arm 24a, and the wafer transfer arm 24a
By moving in the Z direction, both cassettes CR and BR and the peripheral exposure device 23 can be accessed. Further, the wafer transfer arm 24a is rotatable in θ direction, the fourth processing unit G extension unit (EXT) and belonging to the _4, further wafer delivery of the adjacent exposure device side stand of the process station 11 ( (Not shown) can also be accessed.

In such a resist coating and developing system, first, in the cassette station 10, the wafer transfer arm 21 a of the wafer transfer mechanism 21 stores the unprocessed wafer W on the cassette mounting table 20. Access the CR and access the cassette C
Taking out one wafer W from R, it is transported to the third processing section _{G 3} of the extension unit (EXT).

The wafer W is loaded from the extension unit (EXT) into the processing station 11 by the wafer transfer device 46 of the main wafer transfer mechanism 22.
Then, the alignment unit (A) of the _third processing unit G3
After alignment by LIM), the wafer is transported to an adhesion processing unit (AD), where a hydrophobizing process (HMDS process) for improving the fixability of the resist is performed. Since this process involves heating, the wafer W is then
The cooling unit (CO)
L) and cooled.

After the adhesion processing is completed, the cooling
The wafer W cooled by the unit (COL) is continuously
A resist coating unit (CO
T), where a coating film is formed. Coating treatment
After the completion, the wafer W is transferred to the processing unit G. ₃, G₄One of the hot
Pre-baked in the plate unit (HP)
Then cool in one of the cooling units (COL)
Be rejected.

The cooled wafer W is supplied to a third processing unit G ₃
Is conveyed to the alignment unit (ALIM), where it is aligned, it is conveyed to the interface section 12 via the fourth processing unit group G ₄ of the extension units (EXT).

In the interface section 12, after peripheral exposure for removing extra resist is performed by the peripheral exposure apparatus 23, an exposure apparatus (not shown) provided adjacent to the interface section 12 follows a predetermined pattern. An exposure process is performed on the resist film on the wafer W.

The wafer W after the exposure is returned to the interface section 12 again, and the extension unit (EX) belonging to the fourth processing section G ₄ is moved by the wafer transfer mechanism 24.
T). Then, the wafer W is transferred by the wafer transfer device 46 to a hot plate unit (CHP) having a cooling plate, which will be described later, and subjected to post-exposure bake processing.

Thereafter, the wafer W is transferred to the developing unit (DE
V), where the exposure pattern is developed. After the development is completed, the wafer W is transferred to one of the hot plate units (HP) and subjected to post-baking, and then cooled by the cooling unit (COL). After such a series of processing is completed, the third processing unit group G ₃ of the extension unit (EXT)
And is returned to the cassette station 10 via one of the wafer cassettes CR.

Next, a hot plate unit (CHP) having a cooling plate to which the substrate processing apparatus according to the embodiment of the present invention is applied will be described with reference to FIGS. FIG. 4 is a cross-sectional view showing a hot plate unit (CHP) having a cooling plate to which the embodiment of the present invention is applied, FIG. 5 is a schematic plan view thereof, and FIG. FIG. 7 is a perspective view showing a heat exchange unit, FIG. 7 is a schematic diagram showing a heat pipe provided on the cooling plate, with a part cut away, and FIG. 8 is a diagram showing a control system of the hot plate unit in FIG.

The hot plate unit (CHP) having the cooling plate has a casing 50, a heating plate 51 having a disc shape on one side inside, and a cooling plate 71 on the other side. Have.

The heating plate 51 is made of, for example, aluminum, and has proximity pins 52 on its surface.
Is provided. And this proximity pin 5
The wafer W is mounted on the wafer 2 in a state of being close to the heating plate 51. An electric heater 53 having a predetermined pattern is provided on the back surface of the heating plate 51.

The heating plate 51 is supported by a support member 54, and the inside of the support member 54 is hollow. The heating plate 51 has three through-holes 55 formed at the center thereof, and three up-and-down pins 56 for raising and lowering the wafer W are provided in these through-holes 55 so as to be able to move up and down (FIG. 1). 5). Further, a cylindrical guide member 57 which is continuous with the through hole 55 between the heating plate 51 and the bottom plate 54a of the support member 54 is provided. These guide members 57
Thus, the elevating pins 56 can be moved without being obstructed by the heater wiring and the like below the heating plate 51. These elevating pins 56 are supported by a support plate 58, and are moved up and down by a cylinder 59 provided on the side of the support member 54 via the support plate 58.

A support ring 61 that surrounds and supports the heating plate 51 and the support member 54 is provided. A cover 62 that can move up and down is provided on the support ring 61. Then, with the lid 62 lowered to the upper surface of the support ring 61, the wafer W
Is formed. When the wafer W is carried in and out of the heating plate 51, it is retracted upward.

The lid 62 has, for example, a conical shape that gradually increases from the outside toward the center, and has an exhaust port 63 connected to an exhaust pipe 64 at the top of the center. Air is exhausted through the exhaust port 63 and the exhaust pipe 64.

Proximity pins 72 are provided on the cooling plate 71, and the wafer W is placed on the proximity pins 72 in a state of being close to the cooling plate 71 and subjected to a cooling process. The cooling plate 71 is configured to be movable toward the heating plate 51 by, for example, a belt drive by a driving mechanism 73. As shown in FIG. 5, the cooling plate 71 avoids interference with the lifting pins 56 during this movement. Groove 74 is formed. By arranging the cooling plate 71 so as to be movable, it is possible to transfer the wafer W to and from the cooling plate 71 in a state where the elevating pins 56 project from the heating plate 51. Then, both when the wafer W is received and subjected to the cooling process, and after the wafer W is transferred to the heating plate 51, the wafer W returns to the illustrated position.

In the cooling plate 71, as shown in FIG. 6, a plurality of linear heat pipes 75 are arranged in parallel at predetermined intervals. This linear heat pipe 75
As shown in FIG. 7, a container 76 of an outer shell member made of a metal having a cylindrical shape with both ends closed, for example, copper or a copper alloy.
And a wick 77 of a net-like member provided on the inner peripheral wall thereof, and has a closed structure in which a working fluid such as water is filled. The wick 77 has a function of moving the hydraulic fluid using the capillary phenomenon. This linear heat pipe 75 has a function of easily transporting a large amount of heat from one end to the other end by utilizing the evaporation phenomenon and the condensation phenomenon of the working fluid filled therein, and the temperature is high and low. In this case, it has a function to quickly transport heat to make the temperature uniform. In addition, instead of using the wick 77, the hydraulic fluid can be moved by using gravity.

One end of the heat pipe 75 is connected to the cooling plate 7.
1, the heat pipe 75
As shown in FIG. 6, the protruding end of
Is provided. The heat exchanging section 80 has a protruding end of the heat pipe 75 inserted therein, a cooling medium contacting section 81 for bringing a cooling medium such as cooling water into contact with the end, and a housing for accommodating the cooling medium contacting section 81. The contact portion 81 is connected to a supply pipe 83 for supplying a cooling medium and a discharge pipe 85 for discharging the cooling medium from the contact section 81. An opening / closing valve for adjusting the flow rate of the cooling medium to be supplied,
For example, an electromagnetic valve 84 is provided. The heat exchange is performed by the contact of the cooling medium with the heat pipe 75 in the cooling medium contact section 81 of the heat exchange section 80, and the cooling heat of the cooling medium is transferred through the heat pipe 75 to the cooling plate 71.
Supplied to The heat exchanging section 80 includes a drive mechanism 7
The cooling plate 71 may be moved together with the cooling plate 71 when the cooling plate 71 moves, or may be separated from the cooling plate 71 when the cooling plate 71 moves.

A plurality of temperature sensors 91 are provided at appropriate places on the heating plate 51,
A plurality of temperature sensors 92 are also provided at one appropriate position, and the temperatures of the heating plate 51 and the cooling plate 71 are detected by the temperature sensors 91 and 92, respectively. These temperature sensors 91, 9
2, a detection signal from the unit controller 93 for controlling this unit (CHP) as shown in FIG.
To the controller 93 based on the detection information.
Transmits a control signal to the temperature controller 94, and based on the control signal, transmits a signal from the temperature controller 94 to the heater power supply 95 and the solenoid valve 84, and controls the temperatures of the heating plate 51 and the cooling plate 71. Specifically, the temperature of the cooling plate 71 is controlled by adjusting the amount of the cooling medium flowing through the contact portion 81 by the electromagnetic valve 84 to control the amount of cold heat supplied to the heat pipe 75. You. Further, during the heating process, the unit controller 93 sends a control signal to the cylinder 59 to control the elevation of the elevation pins 56. Further, the unit controller 93 sends a control signal to the drive mechanism 73 to control the movement of the cooling plate 71. The unit controller 93 outputs a control signal based on a command from a system controller (not shown) of the resist coating and developing system.

In the hot plate unit (CHP) having the cooling plate configured as described above, the wafer W is heated as follows.

First, the wafer W after the exposure processing is heated by the wafer transfer device 46 to a predetermined temperature in a housing 50 of a hot plate unit (CHP) having a rapid cooling function and having a cooling plate. It is carried in and transferred to the lifting pins 56. Then, the elevating pins 56 are lowered, and the wafer W is placed on the proximity pins 52 of the heating plate 51. Next, the lid 62 is lowered to the upper surface of the support ring 61 to form a processing chamber S for the wafer W.

In this state, the wafer W is heated at a predetermined temperature by the heating plate 51, for example, post-exposure processing. At this time, the temperature of the heating plate 51 that undershoots due to the mounting of the wafer W is compensated by the electric heater 53.

After heating the wafer W for a predetermined time, the wafer W is pushed up by the elevating pins 56, and then the cooling plate 71 is moved to the heating plate 5 as shown in FIG.
The wafer W is placed on the proximity pins 72 on the cooling plate 71 by moving the wafer W onto the cooling plate 71 by lowering the elevating pins 56 as shown in FIG.
Then, as shown in FIG. 7C, the cooling plate 71 is moved to the original position, and the cooling process is performed. After the cooling process, the wafer W is unloaded by the wafer transfer device 46 of the main wafer transfer mechanism 22 via a transfer opening (not shown).

At the time of cooling the wafer W, one end of the heat pipe 75 provided in the cooling plate 71 is inserted into the cooling medium contact portion 81 of the heat exchange unit 80.
When the cooling medium comes into contact with the heat pipe 75 in the cooling medium contact portion 81, heat exchange is performed, and the cold heat of the cooling medium is supplied to the cooling plate 71 via the heat pipe 75. In this case, as described above, the heat pipe 75 has a function of easily transporting a large amount of heat from one end to the other end, and quickly transports heat when there is a high or low temperature in the heat pipe 75 to reduce the temperature. Since it has a function of uniforming, the cold heat of the cooling medium in the heat exchange unit 80 can be quickly transferred to the cooling plate 71, and the wafer W on the cooling plate 71 can be quickly cooled to a predetermined temperature. In addition, the temperature of the cooling plate 75 can be made uniform by the temperature uniforming action of the heat pipe 75, and the temperature uniformity of the cooled wafer W can be improved.

Further, since it is only necessary to provide the heat pipe 75 in the cooling plate 71 as described above, the structure can be simplified as compared with the conventional case in which a bent cooling water passage is formed in the cooling plate 71, and Since it is not necessary to form a cooling water channel by casting or the like, and a large-sized circulation pump is not required, the cooling plate 71 can be made thinner and the unit can be made more compact.

In particular, in the case of a hot plate unit (CHP) having such a cooling plate, it is necessary to move the cooling plate 71, so that the cooling plate 71
It is extremely useful to reduce the thickness. Further, by reducing the thickness of the cooling plate 71, the moving mechanism 73 of the cooling plate 71 and the like can be reduced in size, and accordingly, the unit itself can be further reduced in size.

Next, another example of the heat pipe provided on the cooling plate 71 will be described with reference to FIG.
The heat pipe 100 shown in FIG.
Has a structure in which the inside of the container 101 is partitioned into a plurality of working chambers 103 by a plurality of partition walls 102, and constitutes a so-called heat pipe. The plurality of working chambers 103 are filled with a working fluid, and a wick 105 for moving the working fluid is mounted inside an outer wall 104 of the working chamber 103. Such a heat pipe 10
0, each of the working chambers 103 functions as a heat pipe, and similarly to the heat pipe 75, a large amount of heat is easily applied from one end to the other end by utilizing the evaporation phenomenon and the condensation phenomenon of the working fluid filled therein. The effect of transport and the effect of temperature uniformization can be exhibited.

Since the heat pipe 100 has a flat outer wall, as shown in FIG.
1 can be used. By configuring the cooling plate 71 with the heat pipe 100 itself in this way, the operation of embedding the heat pipe in the plate is not required, and not only the manufacturing is facilitated, but also the cooling plate 71 is simplified.
Can be made thinner and more compact.

Note that the present invention is not limited to the above embodiment, and various modifications are possible. In the above embodiment, the present invention relates to a hot plate unit (C) having a cooling plate.
Although an example in which the present invention is applied to the cooling mechanism of the HP (HP) has been described, it is needless to say that the present invention is not limited to this and can be applied to a normal cooling unit (COL) having only a cooling plate. In the above embodiment, the present invention is applied to the cooling process. However, if a heating medium is used as a thermal medium to be supplied to the heat exchange unit, a large amount of heat is quickly transferred through the heat pipe to quickly move the plate. Can be heated,
In addition, since it is possible to exert a temperature uniforming action of the heat pipe, it can be applied to heat treatment.
In the above embodiment, the cooling medium as the thermal medium is exemplified by cooling water. However, the cooling medium is not limited to this, and another liquid may be used, and a gas such as air, a spray flow, or the like may be used.
When a heating medium is used as the thermal medium, a high-temperature liquid or gas, or a spray flow or the like can be used.

Further, the heat pipe is not limited to the one described in the above embodiment, but various types can be used. For example, it is not necessary to use a plurality of heat pipes, and a single wide heat pipe may be used. In this case, if the inside of the plate is made hollow and filled with the working fluid, the plate itself can be used as one heat pipe.

Further, in the above embodiment, the wafer is placed on the proximity pins to perform indirect heating and cooling. However, the wafer may be placed on the plate so as to be in close contact with the plate. Good. In the above embodiment, the case where a semiconductor wafer is used as a substrate has been described. However, the present invention is also applicable to a case where a substrate to be processed other than the semiconductor wafer, for example, an LCD substrate is heated. further,
Although the case where the present invention is applied to the unit of the resist coating and developing processing system has been described, it goes without saying that the present invention can be applied to cooling and heating of the substrate for other purposes.

[0057]

As described above, according to the present invention,
A heat pipe is arranged in a plate in which a substrate is placed close to or on which a heat exchange unit is provided for exchanging heat by bringing a thermal medium into contact with one end of the heat pipe.
Since the heat pipe has a function of easily transporting a large amount of heat from one end to the other end, and a function of quickly transporting heat and equalizing the temperature when there is a high or low temperature in the heat pipe,
The heat of the thermal medium in the heat exchange section can be quickly transferred to the plate, the substrate on the plate can be quickly maintained at the desired temperature, and the temperature of the plate can be reduced by the heat pipe temperature equalizing action. The substrate can be made uniform, and the temperature uniformity of the substrate can be improved. Further, since only the heat pipe is provided in the plate, the structure can be simple and compact.

In particular, when a cooling medium is brought into contact with one end of the heat pipe in the heat exchange section, since a large amount of cold heat from the cooling medium is supplied to the plate via the heat pipe quickly, The substrate can be cooled more quickly than when cooling water flows through the curved cooling water channel, and the temperature uniformity of the heat pipe increases the temperature uniformity of the plate compared to when cooling water flows through the cooling water channel. The temperature uniformity of the substrate can be further improved. In addition, since it is only necessary to provide a heat pipe in the plate, the structure can be simplified as compared with the conventional case in which a curved cooling channel is formed in the cooling plate, and the cooling channel formation by casting or the like is unnecessary. ,
In addition, since a large circulation pump is not required, the cooling plate can be made thinner and the unit can be made more compact.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing the overall configuration of a resist coating and developing system to which a substrate processing apparatus according to an embodiment of the present invention is applied.

FIG. 2 is a front view showing an overall configuration of a resist coating and developing system to which the substrate processing apparatus according to the embodiment of the present invention is applied.

FIG. 3 is a rear view showing an overall configuration of a resist coating and developing system to which the substrate processing apparatus according to the embodiment of the present invention is applied.

FIG. 4 is a cross-sectional view showing a hot plate unit (CHP) having a cooling plate to which an embodiment of the present invention is applied.

FIG. 5 is a plan view showing a hot plate unit (CHP) having the cooling plate shown in FIG. 4;

FIG. 6 is a perspective view showing a cooling plate and a heat exchange unit used in the hot plate unit of FIGS. 4 and 5;

FIG. 7 is a schematic diagram showing a heat pipe provided on the cooling plate of FIG.

FIG. 8 is a diagram showing a control system of a hot plate unit having the cooling plate of FIG. 4;

FIG. 9 is a view for explaining a process of transferring a wafer from a heating plate to a cooling plate in the hot plate unit having the cooling plate of FIG. 4;

FIG. 10 is a perspective view showing another example of the heat pipe provided on the cooling plate.

FIG. 11 is a perspective view showing an example in which the heat pipe of FIG. 10 is used as a cooling plate itself.

[Explanation of symbols]

 50; casing 51; heating plate 52, 72; proximity pin 71; cooling plate 73; moving mechanism 75, 100; heat pipe 76; container 77, 105; wick 80; heat exchange section 81; cooling medium contact section 101; 102; partition 103; working chamber CHP; hot plate unit having a cooling plate W; semiconductor wafer (substrate)

Claims (8)

[Claims] 1. A substrate processing apparatus for performing thermal processing on a substrate at a predetermined temperature, comprising: a plate on which a substrate is brought close to or placed on a surface thereof; a heat pipe disposed in the plate; A substrate processing apparatus, comprising: a heat exchange unit that performs heat exchange by bringing a thermal medium into contact with one end of a heat pipe. 2. A substrate processing apparatus for cooling a substrate to a predetermined temperature, comprising: a plate for cooling the substrate by approaching or placing the substrate on a surface thereof; a heat pipe disposed in the plate; A substrate processing apparatus, comprising: a heat exchange unit that performs heat exchange by bringing a cooling medium into contact with one end. 3. A substrate processing apparatus capable of heating a substrate and cooling the substrate, comprising: a heating processing unit for mounting the substrate on or near a heating plate and performing a heating process; A plate provided for cooling the substrate by placing the substrate close to or on the surface thereof; a heat pipe disposed in the plate; and a heat exchanging heat by bringing a cooling medium into contact with one end of the heat pipe. A substrate processing apparatus comprising: an exchange unit; and a transport unit that transports a substrate between the heating plate and the plate. 4. The transfer means for moving the plate between a delivery position above the heating plate and a retracted position separated from the heating plate, and a transfer means for moving the plate and the heating plate at the delivery position. The substrate processing apparatus according to claim 3, further comprising: a delivery unit configured to deliver the substrate between them. 5. The substrate processing apparatus according to claim 1, wherein a plurality of the heat pipes are provided, each being arranged linearly and in parallel with each other. 6. The heat pipe according to claim 5, wherein one end of each of the plurality of heat pipes is provided to protrude from the plate, and the heat exchange unit is provided at the one end. Substrate processing equipment. 7. The heat pipe has a container and a plurality of partitions for dividing the inside of the container into a plurality of working chambers, and each working chamber is filled with a working fluid and functions as a heat pipe. Any one of claims 1 to 4, characterized in that:
A substrate processing apparatus according to any one of the preceding claims. 8. The substrate processing apparatus according to claim 7, wherein a container of the heat pipe is used as the plate.