JP2001223166A5 - - Google Patents
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- Publication number
- JP2001223166A5 JP2001223166A5 JP2000362446A JP2000362446A JP2001223166A5 JP 2001223166 A5 JP2001223166 A5 JP 2001223166A5 JP 2000362446 A JP2000362446 A JP 2000362446A JP 2000362446 A JP2000362446 A JP 2000362446A JP 2001223166 A5 JP2001223166 A5 JP 2001223166A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000362446A JP4758000B2 (ja) | 1999-11-30 | 2000-11-29 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33892999 | 1999-11-30 | ||
| JP11-338929 | 1999-11-30 | ||
| JP1999338929 | 1999-11-30 | ||
| JP2000362446A JP4758000B2 (ja) | 1999-11-30 | 2000-11-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001223166A JP2001223166A (ja) | 2001-08-17 |
| JP2001223166A5 true JP2001223166A5 (da) | 2008-01-24 |
| JP4758000B2 JP4758000B2 (ja) | 2011-08-24 |
Family
ID=26576262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000362446A Expired - Fee Related JP4758000B2 (ja) | 1999-11-30 | 2000-11-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4758000B2 (da) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4149168B2 (ja) | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | 発光装置 |
| KR101050467B1 (ko) * | 2010-04-14 | 2011-07-20 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층, 그 제조방법, 상기 다결정 실리층을 이용한 박막 트랜지스터 및 상기 박막 트랜지스터를 구비한 유기발광표시장치 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02140915A (ja) * | 1988-11-22 | 1990-05-30 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPH03110825A (ja) * | 1989-09-26 | 1991-05-10 | Fujitsu Ltd | 半導体製造方法 |
| JPH05190570A (ja) * | 1992-01-17 | 1993-07-30 | Sanyo Electric Co Ltd | 薄膜トランジスタ及びその製造方法 |
| JP3919838B2 (ja) * | 1994-09-16 | 2007-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2000
- 2000-11-29 JP JP2000362446A patent/JP4758000B2/ja not_active Expired - Fee Related