JP2001220241A - BLACK AlN-BASED CERAMIC AND METHOD FOR PRODUCING THE SAME - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an AlN-based ceramic material having further improved black degree of black AlN, maintaining flexural strength without lowering a coefficient of thermal conductivity, having excellent corrosion resistance and mechanical characteristics. SOLUTION: This black AlN-based ceramic contains 100-2,000 ppm calculated as metal silicon of silicon, has <=100 ppm total content of metal elements except aluminum and silicon and exhibits black having <=40 brightness L* prescribed by JIS Z8729. Consequently AlN-based ceramic material satisfying high thermal conductivity, high strength, high corrosion resistance and high black degree can be obtained and is useful as a member for producing a semiconductor.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-strength black AlN ceramic used for members for semiconductor manufacturing equipment, members for industrial machines, heat-resistant and corrosion-resistant members, etc.
The present invention also relates to a member for a semiconductor manufacturing apparatus such as a susceptor or a heater using the ceramic.

[0002]

2. Description of the Related Art AlN-based ceramics have been used as heat dissipating substrates for LSIs, various wear-resistant materials, and mechanical structural members by utilizing their excellent heat conduction characteristics and mechanical characteristics. In recent years, ceramic heaters and ceramic susceptors have come to be used in semiconductor manufacturing equipment because thermal expansion characteristics, corrosion resistance, and the like have been evaluated. Above all, AlN-based ceramics are attracting attention because of their superior corrosion resistance to halogen-based corrosive gases such as CF ₃ used as an etching gas and a cleaning gas as compared with other ceramics such as SiC and alumina. In particular, in the case of applications such as heaters and susceptors, black AlN ceramics are desired since black is generally more radiant and has excellent heating characteristics, and various companies are conducting various studies.

[0003] Originally, AlN ceramics were white,
Although it exhibits an ivory color, a method of adding a transition metal such as titanium, cobalt, zinc, iron, nickel or a compound thereof for coloring is known, and a black color is obtained by adding about 100 ppm or more of the transition metal. (For example, Japanese Patent Publication No. 5-64697, Japanese Patent Application Laid-Open No. 5-58744). However, if these transition elements, Group Ia, or Group IIa elements are present in the sintered body, they will react with the semiconductor wafer to form an impurity layer, causing contamination such as deteriorating characteristics, and cause serious adverse effects on semiconductor wafers and equipment. It is known to exert

Therefore, a method has been proposed in which a metal element is not added and densification is performed by hot pressing instead of a sintering aid. 1988, "Ceramic Substrate and Its Application" (Gakudensha), page 30, discloses that aluminum nitride "TAN-01" hot-pressed without using a sintering agent is gray-black. In addition, WO95 / 211
In No. 39, the content of metal elements other than aluminum was 1
Perform hot pressing with JIS Z
It is disclosed that aluminum nitride having a brightness of N4 or less (gray black) specified in 8721 was obtained. However, even in this patent, the technical concept of blackening could not be read, and it could not be recognized that a perfect black body was obtained even in the examples.

[0005] The present inventors added aluminum oxide to aluminum nitride and produced ALON which reacted during sintering.
The phase induces lattice defects, the lattice defects in the ALON phase become the color center, and the whole ceramic is blackened. The amount of aluminum oxide to be blackened was specified (Japanese Patent Application Laid-Open No. 10-95773). .

[0006]

In the study of the present inventors, those having an ALON phase to some extent have sufficient bending strength and blackness, but the thermal conductivity is reduced due to the presence of the ALON phase. I found the trend. Therefore, when the ALON phase is reduced in order to secure thermal conductivity as a member for a semiconductor manufacturing process or the like, there has been a tendency that bending strength decreases and brightness increases.
Therefore, even if the ALON phase is reduced, it is preferable to improve the bending strength and increase the blackness when used under more severe conditions.

An object of the present invention is to provide a method for stably producing such a material together with such a material, and a member for a semiconductor manufacturing process using the material.

[0008]

Means for Solving the Problems The present inventors have studied various additive elements so as not to impair other characteristics of an AlN-based material as a member for semiconductor production and found that silicon is suitable. Was. Conventionally, when a Si-based material is added to an AlN-based material, sintering is hindered, so that various properties (particularly, bending strength and thermal conductivity) are generally deteriorated (for example, Journal of the Ceramic Industry Association, Vol. No. 89, No. 6, 33
0 (1981)). However, by using a hot press to reduce the inhibition of sintering, and by studying the addition amount of Si in a much smaller range than in the conventional study range, we succeeded in obtaining characteristics that tend to be inconsistent with the conventional case.

That is, the gist of the present invention is as follows. (1) Silicon is contained in an amount of 100 to 2000 ppm in terms of metal silicon, and the total content of metal elements excluding aluminum and silicon is 1
A black AlN-based ceramic, which is not more than 00 ppm and is a black AlN-based ceramic having a lightness L ^* defined in JIS Z8729 of 40 or less. (2) The AlN-based ceramic is ALON which is a sintering reaction generated phase between aluminum nitride and aluminum oxide.
The black AlN-based ceramic according to (1), which comprises a phase. (3) The AlN-based ceramic has an ALON phase of 0.1.
The black AlN-based ceramic according to (2), which contains 5 to 30%. (4) The bending strength of the AlN ceramic is 450MP.
a The black AlN-based ceramic according to any one of (1) to (3), which is not less than a. (5) After preparing a mixed powder containing 0.1 to 20% by mass of aluminum oxide and 100 to 2,000 ppm of silicon in terms of metal, and the balance substantially consisting of aluminum nitride, A method for producing black AlN-based ceramics, comprising firing under pressure at a temperature of 1950C. (6) The method for producing a black AlN-based ceramic according to (5), wherein the silicon is mixed as silicon oxide. (7) A member installed in a semiconductor manufacturing apparatus,
A member for a semiconductor manufacturing process, which is a member obtained by processing the black AlN-based ceramic according to any one of (1) to (4). (8) The member for a semiconductor manufacturing process according to (7), wherein the member is a susceptor for mounting a semiconductor wafer.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the contents of the present invention will be described in detail. The AlN powder used has an average particle size of 1
Fine particles having a particle diameter of 0 μm or less, preferably an average particle diameter of 1 μm or less (submicron), and the content of the simple substance and / or the compound of Group Ia, Group IIa, and the metal elements of the Periodic Table No. 19 or later are all metal conversion. 30 ppm or less in the content of
Total amount of impurity metal elements other than aluminum is 100ppm
The following chemically high-purity compounds are preferred.

The aluminum oxide powder to be added to the AlN powder is usually α-type alumina (Al ₂ O ₃ ), but may be β-type, γ-type, θ-type or κ-type crystals, or may be heated. Aluminum hydroxide (Al (OH) ₃ ) which forms α-type alumina therein, AlOOH, or the like may be used. The particle size of the aluminum oxide powder is usually 1 which is excellent in sinterability.
It is preferably 0 μm or less, and more preferably 1 μm or less (submicron). The aluminum oxide powder contains 30 ppm or less of a metal element and / or a compound of Group Ia, Group IIa, and No. 19 or later of the periodic table in terms of metal. A chemically pure substance having a total amount of 100 ppm or less is suitable.

The amount of aluminum oxide added to AlN is 0.1 to 20% by mass, preferably 0.1 to 20% by mass.
The amount is 1 to 10% by mass. The AlN raw material usually has an oxide layer due to surface oxidation on the surface of the powder.
Depending on the method of producing the 1N powder, an oxide layer of 0.01% by mass or more is unevenly present. Unless pre-treatment such as thickening the oxide layer by leaving the AlN powder in a steam atmosphere in advance is another method, it is still difficult to control the amount of oxide, so a method of adding aluminum oxide is preferable. That is, by adding aluminum oxide to the non-uniform oxide layer so as to have a content of 0.1% by mass or more, AlN and aluminum oxide can be uniformly dispersed during powder mixing. If the content of aluminum oxide is less than 0.1% by mass, it is not necessarily uniformly dispersed,
Due to variations in the ALON phase generated during sintering, non-uniform blackening (color unevenness) occurs, and the lightness (L ^* ) does not become sufficiently small. Further, there is no effect of particle dispersion of AlN and ALON, and improvement in fracture toughness cannot be expected. on the other hand,
When the content of aluminum oxide exceeds 20% by mass, A
The LON phase becomes excessive and hinders sintering, and properties such as bending strength and fracture toughness begin to decrease, so that a bending strength of 450 MPa or more required as a practical material cannot be obtained. When the content of aluminum oxide exceeds 10% by mass, the thermal conductivity falls below 50 W / mK, and if it is used as a heat and corrosion resistant member, it may be used as a member for a semiconductor manufacturing process such as a susceptor. This is not preferable because the in-plane temperature varies.

The ALON phase needs to be formed during sintering. The reaction between AlN and aluminum oxide during sintering generates lattice defects, and the lattice defects are uniformly dispersed, so that the whole can be uniformly blackened without color unevenness. When ALON that had already been generated was added to AlN and sintered, the ALON phase remained stable and did not generate lattice defects and did not exhibit black.

Further, as a result of X-ray diffraction, no peak of aluminum oxide was detected in the sintered body, and it was confirmed that aluminum oxide reacted with AlN during sintering and all became an ALON phase. The amount of the ALON phase was determined by X-ray diffraction of AlN (10
Calculating from the 0) peak and the (400) peak of ALON, the amount of the ALON phase is 0.5 to 30%, preferably 0.5 to 15%, based on the amount of aluminum oxide contained. Converted.

The silicon added to the AlN powder is not particularly limited, such as oxides, nitrides and carbides, but is preferably silicon oxide because it does not impair the effect of aluminum oxide. The particle diameter of these silicon-based powders is preferably not more than 5 μm, preferably not more than 1 μm, so as not to hinder sintering.
It is fine particles of submicron or less (μm), Ia group, II
The content of a simple substance and / or a compound of a metal element of Group a and the periodic table No. 19 or later is 5 in terms of metal.
Chemically high-purity ones having 0 ppm or less and the total amount of impurity metal elements other than silicon and aluminum being 100 ppm or less are preferable.

Literatures disclose that addition of a silicon compound to AlN inhibits sintering. However, if the content is 2000 ppm or less in terms of metal silicon, the density and bending strength do not decrease. ,no problem. However, 2000ppm
If it exceeds, the density will be slightly deteriorated even when sintered by hot pressing. Looking at the bending strength, as shown in FIG.
It can be seen that the strength tends to decrease with the peak at 0 ppm, and that 480 MPa can be maintained at 1000 ppm or less, and 450 MPa can be maintained at 2000 ppm or less. That is, the upper limit of the silicon compound content of the silicon compound is 2000 ppm.
And preferably 1000 ppm. On the other hand, when the content in terms of metallic silicon is less than 100 ppm, there is not much difference from the amount mixed as impurities from the raw material powder, and it is difficult to determine the effect of the addition on the density, bending strength and the like. However, there is a clear tendency regarding blackness, and FIG.
As described above, the lightness (L ^* ) specified in JIS Z8729 becomes 40 or less after exceeding 100 ppm in terms of metal silicon content. Therefore, the lower limit was set to 100 ppm. Further, if it is 200 ppm or more, L ^* is 35 or less, and the blackness can be further increased.

In the present AlN-based ceramics, a high-purity raw material is used in combination, and all the raw materials contain 100 ppm or less of metal elements other than silicon and aluminum. Even if the maximum amount of the impurity metal element is mixed, it does not exceed 100 ppm by simple integration according to the mass ratio. That is, it can be said that this is an AlN-based ceramic material having a very high purity.

Note that the present AlN
In the case of using a system ceramic, especially for a large susceptor for 12 inches (300 mm) or the like, if it does not have a certain strength, it cannot withstand practical use. A special thin susceptor or the like cannot support the wafer unless the pressure is 450 MPa or more, preferably 480 MPa or more. Therefore, this material is 4
A bending strength of 50 MPa or more is desired.

In the case of a member such as a susceptor or a heater, as described above, the member is blackened to increase the amount of radiant heat to improve the heating characteristics. However, at least JIS Z872
If the lightness L ^* specified in 9 is not 40 or less, it cannot be said that the color is sufficiently black, and the radiation efficiency also deteriorates. Therefore, it is desirable that the black member has a lightness L ^* of 40 or less, more preferably 35 or less, at which radiation efficiency is significantly improved.

As a method for producing a black AlN-based ceramic of the present invention, a powder is prepared by adding a predetermined amount of a silicon compound and aluminum oxide to AlN as described above, followed by sintering. . As the sintering method, any of known methods such as a normal pressure sintering method, a hot press sintering method, a gas pressure sintering method, and a hot isostatic pressing (HIP) sintering method may be used. Pressure sintering such as hot pressing is advantageous for obtaining a dense sintered body having excellent characteristics.

The temperature of the pressure sintering is 1600 to 19
50 ° C. is preferred. If the temperature is lower than 1600 ° C., the particles are not sufficiently densified. In particular, a bending strength of 450
In order to make it MPa or more, sintering at 1700 to 1900 ° C. is preferable. The atmosphere during sintering is preferably an inert gas atmosphere, particularly an inert atmosphere containing nitrogen gas, which is advantageous for sintering nitrides. The pressure for the pressure sintering is usually 10 MPa or more, and preferably 20 MPa or more in order to improve the mechanical strength. The firing time is preferably one hour or more so that the sintering is sufficiently completed.

The black AlN-based ceramics of the present invention has a large amount of radiant heat and excellent heating characteristics. Therefore, it is suitable as a base material for heating members such as ceramic heaters and susceptors. Further, since metal elements other than aluminum and silicon are 100 ppm or less, there is no influence of contamination on the semiconductor wafer. That is, it is suitable for a high-purity process in which the influence of the Ia group, IIa group, or transition metal element should be suppressed. In addition, the ALON phase generated by aluminum nitride as a main component or an additive element has high corrosion resistance upon exposure to a halogen-based corrosive gas, and is therefore very suitable as a member for a semiconductor manufacturing process.

[0023]

EXAMPLES (Examples 1 to 5) When the average particle size is 0.2 μm,
Table 1 shows a high purity AlN powder having a group a, a group IIa, a simple substance and / or a compound of a metal element in the periodic table No. 19 or later, each of which is 20 ppm or less in terms of metal and the total amount of these impurities is 50 ppm or less. At a mass ratio shown in the middle example, chemically high-purity silicon oxide having an average particle diameter of 1.5 μm and a total amount of impurity metal elements other than silicon and aluminum of 100 ppm or less and Ia having an average particle diameter of 0.2 μm A high-purity alumina powder containing 20 ppm or less in terms of metal and the total amount of these impurities is 100 ppm or less, and a ball mill is used for the ball mill. After sufficiently mixing the mixture, the mixed powder was filled in a graphite die having a diameter of 100 mm,
Pressure of 40MPa in nitrogen atmosphere at 2 ℃ for 2 hours,
Hot press sintering was performed.

The obtained sintered bodies were # 140, # 400,
After sequentially grinding the surface with a # 1000 diamond grindstone, one side is lap-finished to form a measurement surface. In addition to color unevenness and visual inspection of color, JIS Z87 using a chromaticity meter.
29, or the method specified in CIE 1976,
Blackness was quantified by lightness L ^* . In addition, the sintered body
A test piece of 3 × 4 × 38 mm specified in SR1601 was processed and subjected to a density measurement by an Archimedes method and a three-point bending test at room temperature. Regarding fracture toughness,
K _IC according to the SEPB method specified in JIS R1607
I asked. The thermal conductivity was determined using a laser flash method (based on JIS R1611).

The amount of the ALON phase was determined by the X-ray diffraction of AlN.
(100) peak of ALON and the (400) peak of ALON were determined (in the table, described as the amount of ALON).
It was calculated as l ₂ O ₃ .AlN (specific gravity: 3.837).

[0026]

[Table 1]

In Table 1, as Comparative Examples 1 to 3,
Various characteristics were compared between the case where silicon oxide was not added (containing 10 to 20 ppm in terms of metallic silicon as an impurity) and the case where silicon oxide was added with too little or too much and sintered. As can be seen from Comparative Examples 1 and 2, when the content of silicon metal is less than 100 ppm, the relative density is high and the thermal conductivity is high, but the bending strength is low and the brightness is high. Further, as can be seen from Comparative Example 3, when the content in terms of metal silicon exceeds 2000 ppm, the relative density is low, and the properties of both the thermal conductivity and the bending strength are deteriorated.

FIG. 1 shows the relationship between the metal silicon equivalent content (described as Si content in the table) and the bending strength.
The bending strength decreases as the Si content increases with the peak at 200 ppm, and it can be clearly seen that there is a range suitable for obtaining the strength required by the present AlN-based ceramics. FIG. 2 shows the relationship between the Si content and the lightness L ^* . It can be seen that when the content of Si is large, the color becomes blacker.

(Examples 6 to 10) In the same manner as in Examples 1 to 5, the same powders were added at the mass ratios shown in Examples 6 to 10 in Table 2, mixed, and subjected to hot press sintering. Various properties were measured.

[0030]

[Table 2]

In Table 2, as Comparative Examples 4 and 5, various characteristics were similarly measured and compared for a sintered body containing no alumina and a sintered body to which alumina was excessively added. Without the addition of alumina, the ALON phase is present only to the extent that it cannot be detected by X-rays, resulting in insufficient blackening. Also, it is clear that when alumina is added excessively, the density of the sintered body decreases, and the thermal conductivity and mechanical properties deteriorate.

As Comparative Examples 6 and 7, various characteristics were similarly measured for a sintered body in which the amount of ALON was increased and the Si conversion amount was adjusted to be too small or excessive with a composition aimed at high strength. , And Example 9. When Si is too small, although it is possible to obtain bending strength and fracture toughness by sintering to some extent, it is difficult to obtain uniform heat with low luminous efficiency as a susceptor in addition to high brightness and low thermal conductivity, It is not something that can be used. On the other hand, when the amount of Si is excessive, although the brightness and the thermal conductivity have sufficient values, the sintering density is slightly lowered and the bending strength is insufficient.

(Examples 11 to 16) Powder preparation and mixing were performed in the same manner as in Example 3, and the hot pressing temperature was set to 1600.
Performed at １９1950 ° C. The properties of the obtained sintered body were evaluated in the same manner as in Example 3. In addition, the same measurement was performed for Comparative Examples 7 and 8 having different hot press temperature conditions, and the characteristics were compared.

The results of the comparison are summarized in Table 3, and the temperature and the bending strength are shown in FIG. At a sintering temperature of 1500 ° C. or less, sintering is insufficient, and at a sintering temperature of 2,000 ° C. or more, the density is reduced due to abnormal grain growth due to over-sintering, and the mechanical properties are significantly deteriorated.
It turns out that 600-1950 degreeC is a suitable baking temperature.
In particular, at 1700 to 1900 ° C, a practical strength of 45
It is more preferable since a high bending strength of 480 MPa or more exceeding 0 MPa can be obtained.

[0035]

[Table 3]

The lightness is also 1600-195.
0 ° C. is a preferable range of 40 or less, 1700 to 195
If it is 0 ° C., it is found that the range is more preferably 35 or less.

(Example 17) A susceptor having a diameter of 220 mm and a thickness of 5 mm was prepared from the sintered body produced from the sintered body of Example 3, and placed on a ceramic heater. A 200 mm) silicon wafer was placed on the susceptor and placed in a vacuum chamber equipped with a mechanism for measuring each temperature of the silicon wafer with a thermocouple. The temperature of the silicon wafer was measured by a heat pattern in which the ceramic heater was heated to 500 ° C. for 10 minutes by a temperature display of a thermocouple of the susceptor, held for 1 hour, interrupted the heating, and cooled down.

The heat pattern followed the shape well, enabling stable temperature control. The temperature of the silicon wafer held at 500 ° C. is 4
57 ° C., which could be brought to 500 ° C. by correcting the susceptor temperature to 545 ° C.

Further, the same susceptor was placed in a vacuum chamber equipped with a lamp heating mechanism, and was similarly set to 8 inches (2 inches).
00mm) silicon wafer, and up to 500 ℃
After rapid heating in minutes, the heat pattern overshooted about 20 ° C., but followed well, and stable temperature control was possible. Although the overshoot occurred on the Si wafer side, the delay time was about 20 seconds, and the temperature was 452 ° C. during the holding. In the case of lamp heating, if it is not black, the lamp heat source will be exposed directly to the Si wafer, so it should exhibit a higher temperature.However, since the temperature is almost the same as that of the heater, it is sufficient for lamp heating. Indicates that it can be used as a susceptor. In addition, since the radiant heat is sufficient, it can be said that the Si wafer has a temperature that is 90% of the heating temperature.

[0040]

According to the present invention, high thermal conductivity, high strength,
An AlN-based ceramic material satisfying high corrosion resistance and high blackness can be obtained, and the AlN-based ceramic material can be stably manufactured. Further, a member for a semiconductor manufacturing process having excellent temperature characteristics can be obtained using this AlN-based ceramic material.

[Brief description of the drawings]

FIG. 1 is a diagram showing a change in bending strength with respect to a Si conversion amount in Examples 1 to 5.

FIG. 2 is a diagram showing a change in brightness with respect to a Si conversion amount in Examples 1 to 5;

FIG. 3 is a diagram showing a change in bending strength with respect to a sintering temperature in Examples 11 to 16.

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[Procedure amendment]

[Submission date] February 24, 2000 (200.2.2
4)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0004

[Correction method] Change

[Correction contents]

Therefore, a method has been proposed in which a metal element is not added and densification is performed by hot pressing instead of a sintering aid. 1988, "Ceramic Substrate and Its Application" (Gakudensha), page 30, discloses that aluminum nitride "TAN-01" hot-pressed without using a sintering agent is gray-black. In addition, WO95 / 211
In Japanese Patent Publication No. 39, hot pressing is performed while the content of metal elements other than aluminum is suppressed to 100 ppm or less, and JIS
It is disclosed that aluminum nitride having a brightness defined by Z8721 of N4 or less (gray black) was obtained. However, even in this patent, the technical concept of blackening could not be read, and it could not be recognized that a perfect black body was obtained even in the examples.

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0033

[Correction method] Change

[Correction contents]

(Examples 11 to 16) Powder preparation and mixing were performed in the same manner as in Example 3, and the hot pressing temperature was set to 1600.
Performed at １９1950 ° C. The properties of the obtained sintered body were evaluated in the same manner as in Example 3. Also, Comparative Examples 8 and 9 having different hot press temperature conditions were measured in the same manner, and the characteristics were compared.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0035

[Correction method] Change

[Correction contents]

[0035]

[Table 3]

Continuation of the front page (72) Inventor Hidehiro Endo 2-6-3 Otemachi, Chiyoda-ku, Tokyo Inside Nippon Steel Corporation (72) Inventor Toshio Mukai 2-6-3 Otemachi, Chiyoda-ku, Tokyo New Japan 4G001 BA03 BA04 BA36 BA67 BB36 BB51 BB67 BB71 BC42 BC46 BC52 BD03 BD14 BD16 BD31 BD38 5F031 CA02 DA11 EA01 FA01 JA01 JA46 PA11

Claims (8)

[Claims] 1. The method according to claim 1, wherein the silicon is 100 to 2000 in terms of metallic silicon.
ppm, the total content of metal elements other than aluminum and silicon is 100 ppm or less, and the brightness L ^* specified in JIS Z8729 is an AlN-based ceramic having a black color of 40 or less. AlN ceramics. 2. The black AlN-based ceramic according to claim 1, wherein said AlN-based ceramic includes an ALON phase which is a phase produced by a sintering reaction between aluminum nitride and aluminum oxide. 3. The method according to claim 1, wherein the AlN-based ceramic is ALON.
3. The composition according to claim 2, which contains 0.5 to 30% of a phase.
2. The black AlN-based ceramic according to 1. 4. The AlN ceramics according to claim 1, wherein the bending strength of the AlN ceramics is 450 MPa or more.
The black AlN-based ceramic according to any one of the above. 5. A mixed powder containing 0.1 to 20% by mass of aluminum oxide and 100 to 2000 ppm of silicon in terms of metal, and the balance substantially consisting of aluminum nitride is prepared. Is fired at a temperature of 1600 to 1950 ° C. under pressure. 6. The method for producing a black AlN-based ceramic according to claim 5, wherein said silicon is mixed as silicon oxide. 7. A semiconductor manufacturing process, which is a member installed in a semiconductor manufacturing apparatus, wherein the member is formed by processing the black AlN-based ceramics according to claim 1. Parts. 8. The member for a semiconductor manufacturing process according to claim 7, wherein said member is a susceptor for mounting a semiconductor wafer.