JP2001210915A5 - - Google Patents

Download PDF

Info

Publication number
JP2001210915A5
JP2001210915A5 JP2000014289A JP2000014289A JP2001210915A5 JP 2001210915 A5 JP2001210915 A5 JP 2001210915A5 JP 2000014289 A JP2000014289 A JP 2000014289A JP 2000014289 A JP2000014289 A JP 2000014289A JP 2001210915 A5 JP2001210915 A5 JP 2001210915A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000014289A
Other versions
JP2001210915A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000014289A priority Critical patent/JP2001210915A/ja
Priority claimed from JP2000014289A external-priority patent/JP2001210915A/ja
Priority to TW090101294A priority patent/TW497308B/zh
Priority to KR1020010003610A priority patent/KR100763424B1/ko
Priority to US09/765,580 priority patent/US6492660B2/en
Publication of JP2001210915A publication Critical patent/JP2001210915A/ja
Publication of JP2001210915A5 publication Critical patent/JP2001210915A5/ja
Pending legal-status Critical Current

Links

JP2000014289A 2000-01-24 2000-01-24 半導体発光装置 Pending JP2001210915A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000014289A JP2001210915A (ja) 2000-01-24 2000-01-24 半導体発光装置
TW090101294A TW497308B (en) 2000-01-24 2001-01-19 Semiconductor light emitting device
KR1020010003610A KR100763424B1 (ko) 2000-01-24 2001-01-22 반도체 발광 장치
US09/765,580 US6492660B2 (en) 2000-01-24 2001-01-22 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000014289A JP2001210915A (ja) 2000-01-24 2000-01-24 半導体発光装置

Publications (2)

Publication Number Publication Date
JP2001210915A JP2001210915A (ja) 2001-08-03
JP2001210915A5 true JP2001210915A5 (ja) 2006-11-02

Family

ID=18541767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000014289A Pending JP2001210915A (ja) 2000-01-24 2000-01-24 半導体発光装置

Country Status (4)

Country Link
US (1) US6492660B2 (ja)
JP (1) JP2001210915A (ja)
KR (1) KR100763424B1 (ja)
TW (1) TW497308B (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1252883C (zh) * 2001-04-12 2006-04-19 日亚化学工业株式会社 氮化镓系列化合物半导体元件
US6806197B2 (en) * 2001-08-07 2004-10-19 Micron Technology, Inc. Method of forming integrated circuitry, and method of forming a contact opening
TWI262606B (en) * 2001-08-30 2006-09-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor-element and its production method
KR100396675B1 (ko) * 2001-11-07 2003-09-02 엘지전자 주식회사 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법
JP2003332688A (ja) 2002-03-08 2003-11-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
JP4090768B2 (ja) 2002-03-20 2008-05-28 株式会社日立製作所 半導体レーザ素子
JP4077348B2 (ja) * 2003-03-17 2008-04-16 松下電器産業株式会社 半導体レーザ装置およびそれを用いた光ピックアップ装置
JP2007012729A (ja) * 2005-06-29 2007-01-18 Toshiba Corp 窒化ガリウム系半導体レーザ装置
JP2007109843A (ja) * 2005-10-13 2007-04-26 Rohm Co Ltd 半導体レーザ製造方法及び半導体レーザ
KR100770440B1 (ko) * 2006-08-29 2007-10-26 삼성전기주식회사 질화물 반도체 발광소자
JP2008066476A (ja) * 2006-09-06 2008-03-21 Toshiba Corp 半導体レーザ装置
TWI384657B (zh) * 2009-07-15 2013-02-01 Ind Tech Res Inst 氮化物半導體發光二極體元件
JP5660940B2 (ja) * 2010-04-27 2015-01-28 住友電工デバイス・イノベーション株式会社 光半導体装置の製造方法
US8933434B2 (en) * 2013-05-20 2015-01-13 International Business Machines Company Elemental semiconductor material contact for GaN-based light emitting diodes
US9048363B2 (en) * 2013-05-20 2015-06-02 International Business Machines Corporation Elemental semiconductor material contact for high indium content InGaN light emitting diodes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
EP2264794B1 (en) * 1997-01-09 2014-11-19 Nichia Corporation Nitride semiconductor device
JPH11251685A (ja) * 1998-03-05 1999-09-17 Toshiba Corp 半導体レーザ

Similar Documents

Publication Publication Date Title
BE2016C018I2 (ja)
BE2015C062I2 (ja)
BRPI0110940B8 (ja)
BE2014C025I2 (ja)
JP2000322850A5 (ja)
JP2001210915A5 (ja)
JP2002098707A5 (ja)
JP2002055374A5 (ja)
CH694022C1 (ja)
JP2002107859A5 (ja)
JP2002010952A5 (ja)
JP2001204926A5 (ja)
HU0004873D0 (ja)
JP2002007266A5 (ja)
BRPI0000763B8 (ja)
CN3145854S (ja)
CN3142225S (ja)
CN3150688S (ja)
CN3151268S (ja)
CN3150564S (ja)
CN3150218S (ja)
CN3152810S (ja)
CN3148891S (ja)
CN3147541S (ja)
CN3153525S (ja)