JP2001200234A - Adhesive for fixation of semiconductor wafer and processing method - Google Patents
Adhesive for fixation of semiconductor wafer and processing methodInfo
- Publication number
- JP2001200234A JP2001200234A JP2000013070A JP2000013070A JP2001200234A JP 2001200234 A JP2001200234 A JP 2001200234A JP 2000013070 A JP2000013070 A JP 2000013070A JP 2000013070 A JP2000013070 A JP 2000013070A JP 2001200234 A JP2001200234 A JP 2001200234A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- pressure
- sensitive adhesive
- wafer
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、各種半導体を製造
する工程において、ウエハープロセス終了後のウエハー
を切断分割(ダイシング)する際に半導体ウエハーを固
定するための粘着剤およびその粘着剤を用いた半導体ウ
エハーの加工方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive for fixing a semiconductor wafer when dicing a wafer after completion of a wafer process in a process of manufacturing various semiconductors, and an adhesive for fixing the semiconductor wafer. The present invention relates to a method for processing a semiconductor wafer.
【0002】[0002]
【従来の技術】従来、半導体ウエハーを素子小片に切断
分割するダイシング加工を行うには、半導体ウエハーを
あらかじめ粘着テープ(ダイシングテープ)に貼り付け
て固定し、そのウエハーを回転丸刃により素子形状に沿
って切断し、その後一つ一つの素子を粘着テープ上より
ピックアップしてダイにマウントする、いわゆるダイレ
クトピックアップ方式がとられている。上記方式をとる
場合、ウエハーを固定するに際しては固定力(粘着力)
が強いことが要求され、逆にピックアップするに際して
は粘着力が弱いこと(易剥離性)が要求される。従来そ
のような要求に応えるために、紫外線(UV)、電離性放
射線、電子線等の照射により粘着剤層を硬化させること
で粘着力を低下させる紫外線硬化型の粘着テープ(特開
平1−27213)や、粘着成分に水溶性ポリマーを用
いてダイシング後に温水で溶出するタイプの粘着テープ
が提案されている。2. Description of the Related Art Conventionally, to perform a dicing process for cutting and dividing a semiconductor wafer into element pieces, the semiconductor wafer is pasted and fixed on an adhesive tape (dicing tape) in advance, and the wafer is formed into an element shape by a rotating round blade. A so-called direct pick-up method is adopted, in which each element is cut along the line, and then each element is picked up from an adhesive tape and mounted on a die. When using the above method, the fixing force (adhesive force) when fixing the wafer
Is required to be strong, and conversely, when picking up, it is required to have a low adhesive strength (easy peeling property). Conventionally, in order to respond to such a demand, an ultraviolet-curing adhesive tape which reduces the adhesive strength by curing the adhesive layer by irradiation with ultraviolet (UV), ionizing radiation, electron beam or the like (Japanese Patent Laid-Open No. 1-227213) ) And a type of pressure-sensitive adhesive tape that elutes with warm water after dicing using a water-soluble polymer as the pressure-sensitive adhesive component.
【0003】[0003]
【発明が解決しようとする課題】現在、半導体ウエハー
の大口径・薄型化が世界的規模で進んでおり、最新の多
くのウエハーは外力によって破損しやすくなっている。
そのため、ダイシング時やピックアップ時にウエハーに
加わる負荷をいかに抑えるかがダイシングテープの新た
な課題となっている。例えば、ピックアップ時に完全に
粘着力がゼロになる粘着剤の開発が究極の目標となって
いる(「接着」第43巻第1号,p.22-25,高分子刊行
会,1999)。At present, semiconductor wafers are becoming larger and thinner on a worldwide scale, and many of the latest wafers are easily damaged by external forces.
Therefore, how to reduce the load applied to the wafer at the time of dicing or pick-up is a new problem of the dicing tape. For example, the ultimate goal is to develop a pressure-sensitive adhesive that completely eliminates the adhesive force during pickup ("Adhesion", Vol. 43, No. 1, p. 22-25, Polymer Publishing Association, 1999).
【0004】本発明は、上記課題を大きく解決するもの
である。すなわち本発明の目的は、ダイシング後のピッ
クアップ時の剥離性を大きく向上させた半導体固定用の
粘着剤を提供することにある。本発明の他の目的は、そ
の粘着剤を用いた半導体ウエハーの加工方法を提供する
ことにある。[0004] The present invention largely solves the above-mentioned problems. That is, an object of the present invention is to provide a pressure-sensitive adhesive for fixing a semiconductor, which has greatly improved the releasability at the time of pickup after dicing. Another object of the present invention is to provide a method for processing a semiconductor wafer using the adhesive.
【0005】[0005]
【課題を解決するための手段】本発明の粘着剤は、半導
体ウエハーの加工時にそのウェハーを固定するための粘
着剤であって、ガス発生剤を含むことを特徴とする。ま
た、本発明の半導体ウエハーの加工方法は、ガス発生剤
を含む粘着剤によってウエハーを固定することと、ウエ
ハーをダイシングすることと、可視光線、紫外線、エッ
クス線等の電磁波または電子線によってガス発生剤から
ガスを発生させてウエハーを剥離させることよりなる。The pressure-sensitive adhesive of the present invention is a pressure-sensitive adhesive for fixing a semiconductor wafer at the time of processing the wafer, and is characterized by containing a gas generating agent. Further, the method for processing a semiconductor wafer of the present invention includes fixing the wafer with an adhesive containing a gas generating agent, dicing the wafer, and generating a gas generating agent by an electromagnetic wave or an electron beam such as visible light, ultraviolet light, X-ray, or the like. Gas is generated from the wafer to peel off the wafer.
【0006】ガス発生剤は、半導体ウエハーに対して機
械的・熱的負荷が加わらないように可視光線、紫外線、
エックス線等の電磁波または電子線によってガスを発生
するものが望ましい。かかるガス発生剤としては、アジ
ド基を有する化合物を含むものが好ましい。アジド基
は、光線特に紫外線等の電磁波を吸収すると、分解して
比較的安定な窒素分子をガスとして放出するからであ
る。すなわち、粘着剤としてアジド基を有する化合物を
含む場合には、紫外線照射により分解して窒素ガスを放
出し、ウエハーと粘着剤の間に放出された窒素ガスがウ
エハーと粘着剤の接触面積を減少させ、あるいはガス圧
により界面剥離を促すことにより粘着剤の易剥離性を大
幅に向上させることができるのである。[0006] The gas generating agent is provided with visible light, ultraviolet light,
It is desirable to generate gas by electromagnetic waves such as X-rays or electron beams. As such a gas generating agent, those containing a compound having an azide group are preferable. The azide group is decomposed and absorbs relatively stable nitrogen molecules as a gas when absorbing an electromagnetic wave such as a light beam, particularly an ultraviolet ray. In other words, when a compound having an azide group is contained as an adhesive, it is decomposed by ultraviolet irradiation and releases nitrogen gas, and the nitrogen gas released between the wafer and the adhesive reduces the contact area between the wafer and the adhesive. In addition, by facilitating interfacial peeling by gas pressure, the peelability of the pressure-sensitive adhesive can be greatly improved.
【0007】アジド基を有する化合物としては、アジ化
ソーダをはじめとし、具体的に化学式を特定する資料と
して、A. M. Helmy等が20th Joint Propulsion Confere
nce(Ohio, 1984)にて講演した標題「Investigation of
New Energetic Ingredientfor Minimum Signature Prop
ellants」の紀要に記載されるアジド基含有化合物が知
られている。特に合成のしやすさ、取り扱い性(安全
性)等からメチルアジド(Methylazido)基を有する化
合物が好ましい。例えば、GAP(Glycidyl AzidoPolyme
r)、AMMO(3-azidomethyl-3 methyloxetane),BAMO
(3,3-bis azidomethyl oxetane)等が挙げられる。モノ
マーの状態でも、ポリマー化して用いてもよい。メチル
アジド基を有する化合物の紫外線による分解の機構は、
本発明者等が、取り扱い安全性の面で検討した結果を公
開している(「工業火薬」第51巻第4号,p.240-24
5,1990)。[0007] As compounds having an azide group, for example, sodium azide and AM Helmy et al., 20th Joint Propulsion Confere
nce (Ohio, 1984), titled `` Investigation of
New Energetic Ingredientfor Minimum Signature Prop
Azide group-containing compounds described in the bulletin of "ellants" are known. In particular, a compound having a methylazido group is preferable from the viewpoint of ease of synthesis and handling (safety). For example, GAP (Glycidyl AzidoPolyme
r), AMMO (3-azidomethyl-3 methyloxetane), BAMO
(3,3-bis azidomethyl oxetane) and the like. Even in the state of a monomer, it may be polymerized and used. The mechanism of decomposition of a compound having a methyl azide group by ultraviolet light is as follows.
The present inventors have published the results of studies on handling safety ("Industrial Explosives", Vol. 51, No. 4, p. 240-24.
5, 1990).
【0008】本発明の粘着剤は、紫外線、電離性放射
線、電子線等の照射により粘着剤層が硬化する紫外線硬
化型の粘着剤を含むことが望ましい。前述したように、
一般に紫外線硬化型粘着剤は高い粘着力を有し、ダイシ
ング後に紫外線照射により硬化してウエハーと粘着テー
プとの粘着力を低下させることができるからである。す
なわち、本発明の一実施態様においては、前記紫外線硬
化型粘着剤に対して更に紫外線照射によってガスを発生
するガス発生剤を含ませることにより、紫外線照射され
た際に内部から分解ガスを発生させて、ウエハーと粘着
剤間の接触面積を減少させ、あるいはガス圧により飛躍
的に易剥離性を向上させるものである。The pressure-sensitive adhesive of the present invention desirably contains a UV-curable pressure-sensitive adhesive in which the pressure-sensitive adhesive layer is cured by irradiation with ultraviolet rays, ionizing radiation, electron beams or the like. As previously mentioned,
This is because an ultraviolet curable adhesive generally has a high adhesive strength and can be cured by irradiation with ultraviolet light after dicing to reduce the adhesive strength between the wafer and the adhesive tape. That is, in one embodiment of the present invention, the ultraviolet curable pressure-sensitive adhesive further contains a gas generating agent that generates a gas by ultraviolet irradiation, thereby generating a decomposition gas from the inside when irradiated with ultraviolet light. Thus, the contact area between the wafer and the pressure-sensitive adhesive is reduced, or the peelability is dramatically improved by gas pressure.
【0009】一般に紫外線硬化型粘着剤は、粘着力を有
するアクリル系粘着剤、光重合性オリゴマーおよび光開
始剤をブレンドして調整されるが、紫外線硬化型粘着剤
にアジド基含有化合物等のガス発生剤を含ませる場合
は、その配合割合は、必要に応じて粘着力、易剥離性の
程度を考慮して決めればよい。本発明の粘着剤は、平板
またはフィルムを用いてシート状または巻き取り易いよ
うにテープ状にされて提供されることが好ましい。粘着
剤が紫外線等の電磁波によってガスを発生するものであ
る場合は、平板またはフィルムは紫外線透過基材のもの
とすることが望ましい。In general, an ultraviolet-curable pressure-sensitive adhesive is prepared by blending an acrylic pressure-sensitive adhesive having adhesive strength, a photopolymerizable oligomer and a photoinitiator, and a gas such as an azide group-containing compound is added to the ultraviolet-curable pressure-sensitive adhesive. In the case where a generator is included, the compounding ratio may be determined in consideration of the adhesive strength and the degree of easy peeling as necessary. The pressure-sensitive adhesive of the present invention is preferably provided in a sheet shape using a flat plate or a film or in a tape shape so as to be easily wound up. When the pressure-sensitive adhesive generates gas by electromagnetic waves such as ultraviolet rays, it is preferable that the flat plate or the film is made of an ultraviolet-transparent substrate.
【0010】本発明の粘着剤を用いた半導体ウェハーの
加工方法は、前記したように電磁波等によってガスを発
生させてウェハーを剥離させるものであるが、従来用い
られている紫外線硬化型粘着テープで使用される装置を
そのまま利用して実施できるなど利点が多い。以下に、
本発明を実施例によって更に具体的に説明する。本発明
の効果を実証するために、以下3種の模擬的実験を実施
した。すなわち、ガス発生剤としてアジド基含有化合物
を単独で用いた場合、および、他の紫外線硬化型樹脂と
併用した場合の紫外線照射によるガス発生特性を実証し
た。The method of processing a semiconductor wafer using the pressure-sensitive adhesive of the present invention is to generate a gas by electromagnetic waves or the like to peel off the wafer as described above. There are many advantages, for example, it can be carried out using the used apparatus as it is. less than,
The present invention will be described more specifically with reference to examples. In order to demonstrate the effect of the present invention, the following three simulation experiments were performed. That is, the gas generation characteristics by ultraviolet irradiation when the azide group-containing compound was used alone as a gas generating agent and when used together with another ultraviolet curable resin were demonstrated.
【0011】[0011]
【実施例1】米国特許第4,268,450号の開示に従ってGAP
ポリマーを合成した。本ポリマーを薄く(約3mm)延
ばし、上部に顕微鏡用カバーガラス板(18×18m
m)を乗せ、上部から、紫外線照射(115V、60H
z、0.16A)を行った。その結果、ガラス板とポリマ
ーの間に窒素ガスと推定される気泡が多数発生すること
を確認した。EXAMPLE 1 GAP according to the disclosure of US Pat. No. 4,268,450
The polymer was synthesized. Spread this polymer thinly (approximately 3 mm), and place a microscope cover glass plate (18 × 18 m
m), and irradiate ultraviolet rays (115V, 60H) from above.
z, 0.16 A). As a result, it was confirmed that many bubbles estimated to be nitrogen gas were generated between the glass plate and the polymer.
【0012】[0012]
【実施例2】実施例1と同じ方法で合成したGAPポリマ
ー(分子量約2500、両末端OH基含有)100gにIP
DI(イソホロンジイソシアネート)を3.6g、TPA−1
00(ヘキサメチレンジイソシアネートのアダクト物;旭
化成工業株式会社製)を8.7g入れ、均一混合した後
薄く延ばし、60℃で加温して硬化させ、その状態でガ
ラス板を乗せて密着させた。その状態で紫外線を実施例
1と同様に照射し、状態を観察した結果、数分後、密着
面が内部から発生したガスにより剥がれて一部浮き上が
るような状態となった。Example 2 100 g of a GAP polymer (molecular weight: about 2500, containing OH groups at both terminals) synthesized by the same method as in Example 1
3.6 g of DI (isophorone diisocyanate), TPA-1
8.7 g of 00 (an adduct of hexamethylene diisocyanate; manufactured by Asahi Kasei Kogyo Co., Ltd.) was added, uniformly mixed, and then spread thinly. In this state, ultraviolet rays were irradiated in the same manner as in Example 1, and as a result of observing the state, a few minutes later, the contact surface was peeled off by the gas generated from the inside, and became partially lifted.
【0013】[0013]
【実施例3】上記ポリマーを旭化成工業株式会社製APR
樹脂(感光性樹脂、カルボン酸変性したポリウレタン樹
脂)と1:1の割合で混合し、上記と同様に薄く延ば
し、ガラス板を置き、紫外線を照射した。その結果、ポ
リマーの硬化中及び硬化後もガスの発生がみられた。そ
の後、太陽光に約30分間さらした結果、ガラス板とポ
リマーの一部剥離が観察され、手で力を加えると容易に
外すことができた。Example 3 The above polymer was converted to APR manufactured by Asahi Kasei Corporation
The mixture was mixed with a resin (photosensitive resin, carboxylic acid-modified polyurethane resin) at a ratio of 1: 1 and spread thinly in the same manner as described above, a glass plate was placed, and ultraviolet rays were irradiated. As a result, gas generation was observed during and after the curing of the polymer. Then, as a result of being exposed to sunlight for about 30 minutes, partial exfoliation of the glass plate and the polymer was observed, and it could be easily removed by applying force by hand.
【0014】[0014]
【比較例1】実施例3と同じ方法でポリマーをPPG
(ポリプロピレングリコール)を用い、実施した。ガラ
ス板とポリマーは密着したまま硬化しており、ガラス板
を割ることなしに手で外すことはできそうにない状態で
あった。[Comparative Example 1] A polymer was converted to PPG by the same method as in Example 3.
(Polypropylene glycol). The glass plate and the polymer were cured while keeping them in close contact with each other, and it was almost impossible to remove them by hand without breaking the glass plate.
【0015】[0015]
【発明の効果】以上説明したように、本発明は、半導体
ウェハーを固定するための粘着剤及びその粘着剤を用い
た半導体ウェハーの加工方法として、粘着剤にガス発生
剤を含ませることにより、半導体ウエハーを固定してダ
イシングして後、ウエハーを剥離させることを非常に容
易としたものである。特にガス発生剤としてアジド基を
有する化合物を含ませることにより、紫外線等を照射し
た場合に、単独の状態、硬化した状態、他物質との併用
の状態でもガスを放出し、ウエハーを剥離させることを
より容易としたものである。As described above, the present invention provides a pressure-sensitive adhesive for fixing a semiconductor wafer and a method for processing a semiconductor wafer using the pressure-sensitive adhesive by including a gas generating agent in the pressure-sensitive adhesive. After the semiconductor wafer is fixed and diced, it is very easy to peel off the wafer. In particular, by including a compound having an azide group as a gas generating agent, when irradiating with ultraviolet rays or the like, a gas is released even in a single state, a cured state, or a state used in combination with other substances, and the wafer is peeled off. Is made easier.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/78 M Q ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/78 M Q
Claims (6)
定するための粘着剤であって、ガス発生剤を含むことを
特徴とする粘着剤。1. An adhesive for fixing a semiconductor wafer during processing of the semiconductor wafer, the adhesive comprising a gas generating agent.
波または電子線によってガスを発生するものである請求
項1記載の粘着剤。2. The pressure-sensitive adhesive according to claim 1, wherein the gas generating agent generates a gas by an electromagnetic wave such as visible light or ultraviolet light or an electron beam.
記載の粘着剤。3. A compound containing a compound having an azide group.
The pressure-sensitive adhesive described.
求項1記載の粘着剤。4. The pressure-sensitive adhesive according to claim 1, comprising an ultraviolet-curable pressure-sensitive adhesive.
状にされた請求項1記載の粘着剤。5. The pressure-sensitive adhesive according to claim 1, which is formed into a sheet or a tape using a film.
ス発生剤を含む粘着剤によってウエハーを固定すること
と、ウエハーをダイシングすることと、電磁波または電
子線によってガス発生剤からガスを発生させてウエハー
を剥離させることよりなる加工方法。6. A method for processing a semiconductor wafer, comprising fixing a wafer with an adhesive containing a gas generating agent, dicing the wafer, and generating a gas from the gas generating agent by an electromagnetic wave or an electron beam. A processing method comprising peeling a wafer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000013070A JP3526802B2 (en) | 2000-01-21 | 2000-01-21 | Adhesive for fixing semiconductor wafer and processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000013070A JP3526802B2 (en) | 2000-01-21 | 2000-01-21 | Adhesive for fixing semiconductor wafer and processing method |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002004144A Division JP3526845B2 (en) | 2002-01-11 | 2002-01-11 | Separation accelerator for semiconductor wafer |
JP2002004178A Division JP3532186B2 (en) | 2002-01-11 | 2002-01-11 | Semiconductor wafer processing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001200234A true JP2001200234A (en) | 2001-07-24 |
JP3526802B2 JP3526802B2 (en) | 2004-05-17 |
Family
ID=18540714
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JP2000013070A Expired - Lifetime JP3526802B2 (en) | 2000-01-21 | 2000-01-21 | Adhesive for fixing semiconductor wafer and processing method |
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JP2005290091A (en) * | 2004-03-31 | 2005-10-20 | Furukawa Electric Co Ltd:The | Pressure-sensitive tape for fixing semiconductor wafer |
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US8789569B2 (en) * | 2002-06-03 | 2014-07-29 | 3M Innovative Properties Company | Apparatus for manufacturing ultrathin substrate using a laminate body |
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