JP2001183807A - Method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To decrease mask slips during drawing and to improve the yield of products by an improvement in position accuracy in an electron beam drawing process for executing pattern formation to a mask. SOLUTION: A top table 1 on a drawing table of an electron beam drawing system has a smooth surface composed of a dielectric material 1a and is constituted by embedding an electrode 3 connected to from a DC power source 2 therein. A mask substrate 4 consists of a shading film 8 formed on its main surface, an electron beam resist 9 covering the top thereof and conductive films 5 formed on flanks and rear surface side. The conductive films 5 of the mask substrate 4 placed on the top table 1 are grounded, by which circuits are formed among the DC power source 2, the electrode 3, the dielectric material 1a and the mask substrate 4. The electron beam resist 9 is irradiated with electron beams 7 in the state of surely holding and fixing the mask substrate 4 to the top table 1 by the electrostatic attraction force generated by impressing DC voltage to these circuits, by which mask patterns are drawn.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing technique, and more particularly, to a method for manufacturing a light projection exposure master such as a photomask or a reticle used for photolithography by light projection exposure with high precision by electron beam lithography. The present invention relates to a technology that is effective when applied to a manufacturing technology of a semiconductor device to be manufactured.

[0002]

2. Description of the Related Art When a circuit pattern is drawn on a mask substrate by an electron beam, the drawing chamber usually has a high vacuum. Therefore, a vacuum chuck method cannot be used for fixing the mask substrate located in the drawing chamber. A mechanical method is used as a method of fixing the above. The mask substrate is transported from a mask folder in the atmosphere, mounted on three-point support pins, positioned on a plane, and brought into contact with an opposite reference pin for determining the position of an end surface of the mask substrate, thereby forming a mask on the opposite side. The end face of the substrate is pressed and held by applying a certain force. The circuit pattern is drawn on the mask substrate while maintaining this state. After the circuit pattern is drawn on the mask substrate, it is transferred to a mask folder in the atmosphere.

When a circuit pattern is drawn on a semiconductor wafer by an electron beam, the wafer may be formed by a mechanical method,
An electrostatic chuck system has been proposed and put into practical use.

[0004]

The present inventors have found that there are the following technical problems in drawing a circuit pattern on a mask substrate using an electron beam.

In order to draw a circuit pattern on a mask substrate using an electron beam, it is difficult to obtain pattern position accuracy only when the deflection range of the electron beam is about 6 mm or less. Need to be combined. As a method of fixing the mask substrate on the drawing stage, the mechanical method is simple, but has a technical problem that the mask substrate moves minutely with respect to the drawing stage as the drawing stage moves at high speed.

That is, in the above-mentioned mechanical system in which a pressing force is applied from the end surface of the mask substrate to clamp, the mask substrate is drawn in the middle of drawing by accelerating or decelerating the drawing stage as the positioning operation by moving the drawing stage is repeated. A slip phenomenon that moves with respect to the stage occurs. This phenomenon was found by measuring the position coordinates of the circuit pattern formed on the mask substrate by laser interference. With the increase in the precision of the circuit pattern position, the minute movement of the mask substrate with respect to the drawing stage becomes apparent, and has a fatal effect on the accuracy of the circuit pattern formed on the mask substrate that should function as an original for light projection exposure. That led to concerns.

As a countermeasure against such a small movement of the mask substrate in the mechanical system, it is conceivable to increase the pressing force from the end face of the mask substrate. However, an excessive pressing force distorts the mask substrate. It is not preferable because there is a concern about another technical problem that it may occur.

SUMMARY OF THE INVENTION An object of the present invention is to suppress the phenomenon of micro-movement of a light projection exposure master relative to a drawing stage when drawing a circuit pattern on a light projection exposure master using an electron beam. An object of the present invention is to provide a method for manufacturing a semiconductor device capable of improving the positional accuracy of a circuit pattern formed on an original.

Another object of the present invention is to provide an integrated circuit pattern transferred from a light projection exposure original to a semiconductor substrate by preventing the occurrence of exposure unevenness due to the attachment of foreign matter or the like to the back surface of the light projection exposure original. A method of manufacturing a semiconductor device capable of improving transfer accuracy of a semiconductor device.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0011]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

According to the present invention, there is provided a semiconductor device including a step of manufacturing an original for light projection exposure by electron beam lithography, and a step of transferring a circuit pattern to a semiconductor substrate by photolithography using the original for light projection exposure. In the electron beam writing method, the original plate for light projection exposure during writing is fixed by electrostatic attraction.

[0013] The present invention also provides a process for producing an original for light projection exposure by photolithography using electron beam lithography;
Transferring a circuit pattern to a semiconductor substrate by photolithography using a light projection exposure master; and manufacturing a light projection exposure master in a method of manufacturing a semiconductor device, the method comprising the steps of: A light shielding film is formed on the glass substrate, a conductive film is formed on at least a part of the side surface or the back surface of the glass substrate, an electron beam resist is applied on the light shielding film, and then mounted on a stage of an electron beam drawing apparatus. Then, using a conductive film formed on at least a part of the side surface or the back surface of the glass substrate, holding and fixing the stage by electrostatic suction, and then drawing an integrated circuit pattern on the electron beam resist with an electron beam It is.

Further, the present invention provides a process for producing an original for light projection exposure by photolithography using electron beam lithography,
Transferring a circuit pattern to a semiconductor substrate by photolithography using an optical projection exposure master. In electron beam writing, the manufacturing substrate of the optical projection exposure master is a drawing stage. When mounting on a tray that temporarily holds a manufacturing substrate, and then setting it on a drawing stage, a function of holding and fixing the manufacturing substrate to the drawing stage by electrostatic attraction, and An electron beam lithography system including a function of confirming a fixed state is used.

More specifically, in the step of manufacturing the master for light projection exposure, at least a part of the side surface or the back surface of the mask (reticle) substrate having the light shielding film formed on the main surface of the transparent glass substrate is electrically conductive. A film is formed, an electron beam resist is applied on the light shielding film, and then mounted on a drawing stage of an electron beam drawing apparatus, using a conductive film formed on at least a part of a side surface or a back surface of a mask (reticle) substrate. Then, an integrated circuit pattern (mask (reticle) pattern) is drawn on a resist by an electron beam after being held and fixed on a drawing stage by electrostatic attraction.

Thus, during the electron beam drawing, the mask (reticle) substrate is securely fixed to the drawing stage, and the minute movement during the drawing is suppressed, so that the mask (reticle) pattern drawing by the electron beam can be performed. Processing accuracy, particularly positional accuracy, can be improved, and the yield and quality of a semiconductor wafer and a semiconductor device on which an integrated circuit pattern is formed by transferring the mask (reticle) pattern can be improved.

Further, by removing the conductive film on the back surface of the mask (reticle) substrate or forming a transparent conductive film on the back surface of the mask (reticle) substrate, the back surface of the mask (reticle) substrate can be removed. Foreign matter adhesion can be reduced. Exposure unevenness and the like can be prevented.

[0018]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a flowchart showing an example of the steps of a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIGS. 2 and 3 show light projection in the method of manufacturing a semiconductor device of the embodiment. FIG. 3 is a cross-sectional view of a mask (reticle) substrate fixed in a sample chamber of an electron beam lithography apparatus used for manufacturing an exposure master. In the following description,
The exposure master is generically called a mask.

The top table 1 of the drawing stage 10
It is made of a dielectric material 1a, in which an electrode 3 connected from a DC power supply 2 is embedded. The uppermost surface of the dielectric material 1a is an extremely smooth surface, on which a concave portion 1b is formed, on which the mask substrate 4 is installed so as to support the peripheral portion.

The mask substrate 4 has a light shielding film 8 of chromium or the like formed on the main surface of a glass substrate 4a, and a conductive film 5 formed on at least a part of the side surface or the back surface. 1a. An electron beam resist 9 is applied on the light shielding film 8. When the main surface or a part of the mask substrate 4 where the conductive film 5 is formed is grounded, the DC power supply 2, the electrode 3, the dielectric material 1a,
A circuit is formed between the mask substrates 4.

At this time, when a voltage is applied from the DC power supply 2, a potential difference is generated between the electrode 3 and the mask substrate 4, thereby causing dielectric polarization of the dielectric material 1a and generating an electrostatic attraction force. The mask substrate 4 uses the electrostatic attraction force to form the dielectric material 1a.
Is adsorbed. In this state, the electron beam 7 is irradiated on the electron beam resist 9 on the surface of the mask substrate 4 to form a mask pattern.

In the following, a detailed study will be made in applying the electrostatic chucking device having the above configuration.

Drawing stage 10 during drawing on mask substrate 4
It is necessary to increase the electrostatic attraction force in order to suppress the slip with respect to. To do so, 1) increase the applied voltage from the DC power supply 2; 2) reduce the distance between the electrode 3 and the mask substrate 4; 3) increase the contact area between the dielectric material 1a and the mask substrate 4; Can be considered. However,
Several tens of μA is applied to the dielectric material 1a between the electrode 3 and the mask substrate 4.
A small amount of current flows at a level, and in each of the above 1) to 3), the value of the current flowing between the electrode 3 and the mask substrate 4 becomes larger. As a result, the calorific value increases, causing expansion and the like of the mask substrate 4 and affecting the positional accuracy. That is, it is necessary to suppress heat generation while securing the attraction force, and the distance between the electrode 3 and the mask substrate 4, the magnitude of the applied voltage, and the resistivity of the dielectric material 1a are limited.

In the case of the present embodiment, it is conceivable to use a high resistivity material of 104 Ω · cm or more such as SiC or SiN as the dielectric material 1a. Also, as in the present embodiment, it is effective to form the concave portion 1b on the contact surface of the dielectric material 1a with the mask substrate 4 to reduce the contact area, and to improve the processing accuracy in forming the suction surface. Therefore, it is better to reduce the contact area.

An example of dimensions in the configuration of FIG. 2 is shown. Taking the case of a 6-inch substrate as an example, the glass substrate 4a
mm × 150 mm, thickness 6 mm, and diameter of a light passing portion 5 a described later is 120 mm × 120 mm. At this time, the corresponding top table 1 has an outer dimension of 140 mm × 140 mm at a contact portion with the glass substrate 4a, and a dimension of the concave portion 1b is 120 mm × 120 mm. Therefore, the ratio of the contact area of the top table 1 to the glass substrate 4a is about 36%.

Next, regarding the grounding of the mask substrate 4, when a part of the mask substrate 4 is grounded by the ground pin 6, the potential difference between the electrode 3 and the mask substrate 4 disappears when the ground pin 6 is separated from the mask substrate 4. Then, the electrostatic attraction force does not work. Thus, the drawing stage 1 at the time of drawing
There is a concern that the mask substrate 4 may slip during the zero movement. Alternatively, the entire mask substrate 4 has a positive potential, and the electron beam 7 is affected by this potential, so that the irradiation position accuracy is significantly reduced. Therefore, it is extremely important to reliably ground the mask substrate 4 and this is reflected in the reliability of the electron beam lithography apparatus. Therefore, in the present embodiment, the ground monitor 11 that measures the minute current i flowing through the ground pin 6 is provided, and by monitoring whether or not the minute current i is zero, the presence or absence of generation of the electrostatic attraction force is monitored. .

Although the ground pins 6 are in contact with the mask substrate 4, if they contact the surface of the mask substrate 4, foreign matter may be scattered to the pattern forming portion. It is more effective to make contact with the side surface 4 from the viewpoint of foreign matter adhesion.

It should be noted here that the conductive film 5 must be grounded in order to generate an electrostatic attraction force.
It is also necessary to provide a ground to release the battery so that it does not charge up.
As in the present embodiment, it is important that each of the electron beam resist 9, the light shielding film 8, and the conductive film 5 on the side surface or the back surface is in contact with each other to be conductive.

The conductive film 5 may be a transparent conductive film 5-1, as shown in FIG. 3, and may be formed on at least a part of the back surface of the mask substrate 4. Good. FIG. 3 shows an example in which the transparent conductive film 5-1 is formed over the entire area of the side surface and the back surface of the mask substrate 4.

FIG. 4 shows a state in which a portion of the conductive film 5 on the back surface is removed from the patterned mask substrate 4 after drawing by the fixing method illustrated in FIG. Is shown.

The step of removing the conductive film 5 and forming the light transmitting portion 5a includes the steps of: forming a mask pattern 8a by etching or the like using the electron beam resist 9 as a mask;
Or at a later stage. Forming the light passing portion 5a by removing a part of the conductive film 5 is not possible because the exposure light cannot be transmitted if the conductive film 5 is present on the entire back surface at the time of pattern transfer in the subsequent light exposure. This is to avoid that. Therefore, the area of the light passing portion 5a may be formed by removing a minimum area at the time of exposure or by removing the entire conductive film 5, or may be formed in a necessary minimum in the step of forming the conductive film 5 in advance. It is also possible to form the conductive film 5 only in the region and open the region of the light passing portion 5a.

If it is desired to avoid such a step of removing the conductive film 5, the transparent conductive film 5-1 is used as the conductive film as shown in FIG.
It is also possible to eliminate the need to remove the conductive film (transparent conductive film 5-1) even after the formation of.

In forming a pattern by irradiating the mask substrate 4 with an electron beam, a mechanical clamp such as conventionally pressed from the lateral direction often draws while giving a mask a warp or distortion of several μm. It is extremely difficult to control reproducibility. On the contrary,
In the case of the present embodiment, the mask substrate 4 and the dielectric material 1
Since the mask substrate 4 is held and fixed on the drawing stage 10 by the electrostatic attraction force generated between the mask substrate 4 and a, a mechanical clamp is unnecessary, and the processing accuracy of the mask pattern formed on the mask substrate 4 by electron beam drawing is eliminated. Can be expected to improve.

In the above description, an example is shown in which the mask substrate 4 is mounted alone on the drawing stage 10.
As shown in FIG. 2, the tray 21 may be used to place the image on the drawing stage 10.

FIG. 7 shows an example of an electron beam lithography system in which the mask substrate 4 is placed on the lithography stage 10 using such a tray 21.

In FIG. 7, reference numeral 31 denotes an electron gun for emitting the electron beam 7; 32, an electron optical system for controlling the electron beam 7; 33, a lens barrel on which the electron optical system 32 and the electron gun 31 are supported;
4 is a drawing chamber, 35 is a load lock chamber, 36 is a vacuum pump that exhausts the lens barrel 33 and the drawing chamber 34, 37 is a stage drive unit that drives the drawing stage 10, and 38 is a precise position of the drawing stage 10. Laser measuring unit to measure, 39
Is a control unit for controlling the entire apparatus.

In the case of the present embodiment, the drawing stage 10 is provided with the top table 1 made of the dielectric material 1a. The structure is as illustrated in FIGS.

The grounding monitor 11 is connected to the control unit 39, and outputs an alarm signal to the control unit 39, for example, when the electrostatic attraction force decreases during the drawing operation (the minute current i disappears). Upon receiving the notification, the control unit 39 recognizes that the fixing failure of the mask substrate 4 has occurred, and performs an operation such as stopping the drawing operation.

Hereinafter, an example of the operation of the electron beam drawing apparatus of FIG. 7 will be described. First, the mask substrate 4 stored in the tray 21 is carried into the drawing chamber 34 via the load lock chamber 35 and placed on the drawing stage 10. At this time, FIG.
As illustrated in FIG. 2, the mask substrate 4 whose bottom surface is supported by the top table 1 on the drawing stage 10
From the top table 1 (dielectric material 1).
The bottom portion is supported only by a), and
The side surface portion comes into contact with the ground pin 6 and is grounded.

Thereafter, the top table 1 (dielectric material 1
a) and a DC voltage is applied from the DC power supply 2 to the mask substrate 4 to stably hold and fix the mask substrate 4 to the top table 1. At this time, a minute current i flows through the ground monitor 11, and the control unit 39 recognizes that the holding operation has been completed on the mask substrate 4, and performs pattern drawing by combining movement of the drawing stage 10 and irradiation of the electron beam 7. Perform the operation.

When an alarm signal is input from the ground monitor 11 during the drawing operation, the drawing operation is stopped as a fixing failure of the mask substrate 4, and an alarm is output to the outside as necessary. For this reason, it is possible to prevent the occurrence of a defect such as a decrease in the accuracy of a drawing pattern due to a fixing failure of the mask substrate 4 during drawing.

Based on the above description, an example of a method of manufacturing a semiconductor device according to the present embodiment will be described with reference to the flowchart of FIG.

First, a glass substrate 4 as a mask substrate 4
a is prepared (step 101). Next, the glass substrate 4
A light shielding film 8 made of a metal thin film of chromium or the like is formed on the entire main surface a (step 102). Further, a conductive film 5 is formed on the back surface of the glass substrate 4a (step 10).
3) Then, an electron beam resist 9 is applied to the entire surface of the light shielding film 8 formed on the main surface of the glass substrate 4a (step 104). Thus, the mask substrate 4 before drawing is obtained.

Thereafter, the mask substrate 4 is loaded into the drawing chamber 34 of the electron beam drawing apparatus via the load lock chamber 35 while being stored in the tray 21 (Step 105), and the top table 1 and the conductive film 5 are loaded. The mask substrate 4 is fixedly held on the drawing stage 10 by the electrostatic attraction force generated between (Step 106), and pattern drawing is performed by the electron beam 7 (Step 107).

After completion of the drawing, the mask substrate 4 is placed on the tray 21
At the same time, the electron beam is unloaded via the load lock chamber 35 (Step 108), and the electron beam resist 9 on the surface of the mask substrate 4 exposed to the predetermined pattern by the electron beam 7 is developed (Step 109). The light shielding film 8 is processed into a desired mask pattern 8a by etching using the pattern of the electron beam resist 9 as a mask, and furthermore, the conductive film 5 on the back surface side of the mask substrate 4 is exposed to, for example, an exposure light transmission range. The light-passing portion 5a is formed by etching only (Step 110), and a light projection exposure mask is completed (Step 111).

Thereafter, the mask substrate 4 is set as a light projection exposure mask in a reduction projection exposure apparatus (not shown) in a wafer process (pre-process), and the mask pattern 8a of the mask substrate 4 is transferred and formed on a semiconductor wafer (not shown). A circuit pattern is formed on the semiconductor wafer by photolithography (step 112).

After the completion of the wafer process, an assembling process such as dicing, packaging, and a function test is performed (step 113) to complete a semiconductor device (not shown).

As described above, according to the method of manufacturing a semiconductor device of the present embodiment, the mask substrate 4 has the light shielding film 8 formed on the main surface of the transparent glass substrate 4a. A conductive film 5 is formed on at least a part of the side surface or the back surface, an electron beam resist 9 is applied on the light shielding film 8, and then mounted on a drawing stage 10 of an electron beam drawing apparatus, and the side surface of the glass substrate 4a or Using the conductive film 5 formed on at least a part of the back surface, the drawing stage 1 is formed by electrostatic attraction between the top table 1 (dielectric material 1a).
The electron beam 7 is held on the electron beam resist 9 and fixed.
By drawing a mask pattern of an integrated circuit by using the mask substrate 4, it is possible to improve processing accuracy, particularly positional accuracy, when writing a mask pattern with the electron beam 7.
The yield and quality of a semiconductor wafer product manufactured by a wafer process using the lithography as an exposure master can be improved.

The conductive film 5 is also formed on the back surface of the mask substrate 4.
Is provided, it is possible to reduce the adhesion of foreign matter to the back surface of the mask substrate 4 when the mask substrate 4 is transported, and to reduce the dimensional variation of the transfer circuit pattern due to uneven illuminance during projection exposure due to the attached foreign matter. Can be.

Further, when the mask pattern is drawn by the electron beam 7, the fluctuation of the electrostatic attraction force with respect to the mask substrate 4 is monitored by the grounding monitor 11, so that the mask during the writing is drawn due to insufficient electrostatic attraction force. A decrease in pattern drawing accuracy due to the displacement of the substrate 4 can be prevented beforehand, and the mask substrate 4 can be manufactured as a light projection exposure mask having a highly accurate mask pattern 8a.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and can be variously modified without departing from the gist thereof. Needless to say, there is.

[0053]

According to the method of manufacturing a semiconductor device of the present invention, when a circuit pattern is formed by drawing on an original for light projection exposure using an electron beam, a small movement phenomenon of the original for light projection exposure relative to the drawing stage is prevented. In this case, the positional accuracy of the circuit pattern formed on the original for light projection exposure can be improved.

Further, according to the method of manufacturing a semiconductor device of the present invention, it is possible to prevent the occurrence of exposure unevenness due to the attachment of a foreign substance or the like to the back surface of the light projection exposure original and transfer the light projection exposure original to the semiconductor substrate. The effect is obtained that the transfer accuracy of the formed integrated circuit pattern can be improved.

[Brief description of the drawings]

FIG. 1 is a flowchart showing an example of steps of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 shows an example of a fixed state of a mask (reticle) substrate in a sample chamber of an electron beam lithography apparatus used for manufacturing a master for light projection exposure in a method of manufacturing a semiconductor device according to an embodiment of the present invention. It is sectional drawing.

FIG. 3 shows a modified example of a fixed state of a mask (reticle) substrate in a sample chamber of an electron beam lithography apparatus used for manufacturing a master for light projection exposure in a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG.

FIG. 4 is a cross-sectional view showing an example of a mask substrate used in the method for manufacturing a semiconductor device according to one embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a modification of the mask substrate used in the method for manufacturing a semiconductor device according to one embodiment of the present invention;

FIG. 6 is a cross-sectional view illustrating an example of a holding state of a mask substrate in a writing chamber of an electron beam writing apparatus in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 7 is a flowchart illustrating an example of an operation of the electron beam lithography apparatus in the method for manufacturing a semiconductor device according to one embodiment of the present invention;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Top table 1a Dielectric material 1b Depression 2 DC power supply 3 Electrode 4 Mask substrate 4a Glass substrate 5 Conductive film 5-1 Transparent conductive film 5a Light transmission part 6 Earth pin 7 Electron beam 8 Light shielding film 8a Mask pattern 9 Electron beam Resist 10 Drawing stage 11 Grounding monitor 21 Tray 31 Electron gun 32 Electron optics 33 Lens tube 34 Drawing room 35 Load lock room 36 Vacuum pump 37 Stage drive unit 38 Laser measuring unit 39 Control unit

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Nobuo Hasegawa 3-16-1, Shinmachi, Ome-shi, Tokyo Inside the Device Development Center, Hitachi, Ltd. (72) Yoshihiko Okamoto 5-chome, Josuihoncho, Kodaira-shi, Tokyo No. 20 No. 1 F-term within Hitachi, Ltd. Semiconductor Group (reference) 2H095 BA01 BB10 BB29 BC16 2H097 AA03 CA16 DA20 JA02 LA10 5C001 AA01 AA03 CC06 5C034 BB06

Claims (5)

[Claims] 1. A semiconductor device comprising: a step of manufacturing a master for light projection exposure by electron beam drawing; and a step of transferring a circuit pattern to a semiconductor substrate by photolithography using the master for light projection exposure. A method of manufacturing a semiconductor device, wherein in the electron beam writing, the light projection exposure original plate during writing is fixed by electrostatic attraction. 2. A method for producing a master for light projection exposure by photolithography using electron beam drawing, and a step of transferring a circuit pattern to a semiconductor substrate by photolithography using the master for light projection exposure. In the method for manufacturing a semiconductor device, in the step of manufacturing the light projection exposure master, the light projection exposure master forms a light shielding film on a main surface of a transparent glass substrate, and a side surface of the glass substrate. Alternatively, a conductive film is formed on at least a part of the back surface, an electron beam resist is applied on the light shielding film, and then mounted on a stage of an electron beam lithography apparatus, and at least one of the side surface or the back surface of the glass substrate. Using the conductive film formed on the portion, holding and fixing the stage on the stage by electrostatic adsorption, and then drawing an integrated circuit pattern on the electron beam resist with an electron beam. The method of manufacturing a semiconductor device according to claim. 3. A step of manufacturing a master for light projection exposure by photolithography using electron beam lithography, and a step of transferring a circuit pattern to a semiconductor substrate by photolithography using the master for light projection exposure. In the step of manufacturing the light projection exposure master, the light projection exposure master is:
While forming a light shielding film on the main surface of the transparent glass substrate, forming a conductive film on at least a part of the side surface or the back surface of the glass substrate, applying an electron beam resist on the light shielding film, The electron beam resist is mounted on a stage of an electron beam lithography apparatus and held and fixed to the stage by electrostatic attraction using the conductive film formed on at least a part of a side surface or a back surface of the glass substrate. A method of manufacturing a semiconductor device in which an integrated circuit pattern is drawn by an electron beam thereon, wherein the conductive film is the same metal film as the light shielding film on the main surface of the glass substrate, or a transparent conductive film. A method for manufacturing a semiconductor device, which is a film. 4. A step of manufacturing a master for light projection exposure by photolithography using electron beam lithography, and a step of transferring a circuit pattern to a semiconductor substrate by photolithography using the master for light projection exposure. In the step of manufacturing the light projection exposure master, the light projection exposure master is:
While forming a light shielding film on the main surface of the transparent glass substrate, forming a conductive film on at least a part of the side surface or the back surface of the glass substrate, applying an electron beam resist on the light shielding film, The electron beam resist is mounted on a stage of an electron beam lithography apparatus and held and fixed to the stage by electrostatic attraction using the conductive film formed on at least a part of a side surface or a back surface of the glass substrate. A method of manufacturing a semiconductor device in which an integrated circuit pattern is drawn on an electron beam on the back surface of the glass substrate, wherein the conductive film is formed at the time of forming the integrated circuit pattern on the light shielding film, or A method for manufacturing a semiconductor device, comprising: removing a semiconductor device after forming a circuit pattern. 5. A method for producing a master for light projection exposure by photolithography using electron beam drawing, and a step of transferring a circuit pattern to a semiconductor substrate by photolithography using the master for light projection exposure. A method of manufacturing a semiconductor device, wherein in the electron beam lithography, when a production substrate of the original for light projection exposure is set on a drawing stage, or when the production substrate is placed on a tray that temporarily holds the production substrate and is set on the drawing stage. An electron beam lithography apparatus including a function of holding and fixing the production substrate on the drawing stage by electrostatic attraction and a function of confirming a fixed state of the production original plate with respect to the drawing stage by the electrostatic adsorption are used. Manufacturing method of a semiconductor device.