JP2001174524A - Trouble analysis device and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a trouble analysis device and method for analyzing a trouble with a semiconductor device easily and accurately substantially at a low cost. SOLUTION: In this trouble analysis device, a troubled position is located by feeding a power and/or a signal to a semiconductor device 100 having an integrated circuit chip with exposed front and rear surfaces 100a and 100b and observing a weak light beam emitted from the troubled position of the semiconductor device 100. The troubled analyzer comprises a light beam radiating means 1 radiating a light of a specified wavelength from the surface 100a side of the semiconductor device 100, adjusting means 3, 5, 6, and 7 adjusting the intensity and optical axis of the radiated light beam radiated from the light beam radiating means 1, a power and signal feeding means 12 for feeding a power and/or a signal to the semiconductor device 100, a light beam receiving means 2 for receiving a transmitted light beam and weak emitted light beam from the rear surface 100b side of the semiconductor device 100, and an image recording and indicating means 11 for recording, as images, the light beam received by the light receiving means 2 and capable of indicating a plurality of images overlappingly on a screen.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for analyzing a failure of a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, in a failure analysis apparatus for a failed semiconductor device, the failure location of the semiconductor device is estimated by observing weak light generated from the failure location when power or a signal is supplied to the semiconductor device. I do.

In such a failure analysis apparatus, for example, a specific power and / or signal is supplied to a semiconductor device having a defect in a part of an electric circuit to activate the semiconductor device, and a weak light is generated from the defective portion. A surface light emission image obtained by observing this weak light using a high-sensitivity camera and a surface circuit pattern image obtained by previously irradiating the semiconductor device surface with visible light generated by a halogen light source and similarly using a high-sensitivity camera. Compare. Then, based on this comparison, the light emission position of the weak light on the semiconductor device is estimated as a failure location.

In particular, when a defective portion exists directly below an aluminum wiring of a semiconductor device, weak light generated from the defective portion is blocked by the aluminum wiring.
Weak light cannot be observed from the front side of the semiconductor device. In such a case, a method of observing weak light emission from a defective portion from the back surface of the semiconductor device is used. In that case, the surface circuit pattern image captured by the same method as the above-described conventional example, or CAD (Computer A)
The inverted circuit pattern image obtained by inverting the front-side circuit pattern image obtained from ided Design) on the computer screen is displayed, and the back-side light emission image obtained by observing the weak light emission generated from the defective portion from the back side. Based on this comparison, the light emission position of the weak light on the semiconductor device was estimated.

[0005]

However, especially when there is a defective portion immediately below the aluminum wiring of the semiconductor device, the surface circuit pattern previously observed from the surface or the surface circuit pattern from the CAD is reversed on the computer screen. In the method of comparing the displayed inverted circuit pattern image with the position of the emission image of the back surface observed from the back surface, it is necessary to turn the semiconductor device upside down and to perform precise alignment again. This alignment requires considerable labor and time, and requires a precise and complicated alignment device, which inevitably increases the cost.

In a conventional method of observing a backside circuit pattern from the backside using a semiconductor device failure analyzer, if visible light is used, the semiconductor device becomes Si or GaAs.
Since s has a structure in which several kinds of metals or the like are laminated, it itself absorbs a part of visible light. For this reason, since the chip of the semiconductor device has a thickness of about 300 (μm),
In order to obtain a required backside circuit pattern image, it is necessary to reduce the thickness by polishing the backside of the semiconductor device, for example. This polishing is troublesome, and may be destroyed if the polishing is performed excessively.

The present invention has been made in view of the above circumstances, and has as its object to provide a failure analysis apparatus and method for analyzing a failure of a semiconductor device simply, accurately, and substantially at low cost.

[0008]

A failure analysis apparatus according to the present invention supplies power and / or a signal to a semiconductor device in which the front and back surfaces of an integrated circuit chip are exposed, and generates the semiconductor device from a failure location of the semiconductor device. A failure analysis apparatus configured to identify the failure location by observing weak light, wherein the light irradiation unit irradiates infrared light from a surface side of the semiconductor device, and the semiconductor device is irradiated by the light irradiation unit. Adjusting means for adjusting the intensity and the optical axis of the illuminating light; power / signal supplying means for supplying power and / or a signal to the semiconductor device; and receiving the transmitted light and weak light emission from the back side of the semiconductor device. Light receiving means, image recording and display means capable of recording light received by the light receiving means as an image, and superimposing and displaying a plurality of recorded images on a screen; Characterized by comprising.

Further, in the failure analyzing apparatus according to the present invention, the light irradiating means includes a wavelength switching means for switching a wavelength of infrared light to be radiated to the semiconductor device.

Further, the failure analysis method according to the present invention irradiates infrared light to a front surface side of a semiconductor device in which the front and back surfaces of an integrated circuit chip are exposed, and detects transmitted light from the back surface side of the semiconductor device. Recording a surface circuit pattern image of the semiconductor device as a reverse circuit pattern image equivalent to an inverted surface circuit image, and detecting weak light generated from a failure portion by supplying power and / or a signal to the semiconductor device; It is recorded as a back emission image of light generated at the failure location, the back circuit pattern image and the back emission image are superimposed and displayed, and the position of the failure location in the electric circuit of the semiconductor device is specified. I do.

Further, in the failure analysis method according to the present invention, when irradiating light to the surface side of the semiconductor device, the wavelength of the irradiating light is switched.

According to the present invention, when observing a backside circuit pattern from the backside of a semiconductor device having a defective portion immediately below the aluminum wiring by using a conventional failure analyzer, the aluminum wiring of the semiconductor device is moved from the backside. The observed backside circuit pattern is directly compared with the position of the backside luminescent image, which is the weak luminescent image of the failure location observed from the backside.

A conventional method of comparing the position of an inverted circuit pattern image displayed by inverting a front surface circuit pattern observed from the front surface or a front surface circuit pattern from a CAD screen on a computer screen with a back surface light emission image observed from the back surface is used. In such a case, there is no need to turn over the semiconductor device and precisely align it again. In that case, a complicated positioning device is not required.

In addition, by using infrared light as a light source when irradiating light from the chip surface of the semiconductor device, the light generated by the semiconductor device itself can be reduced as compared with the case where a conventional halogen light source of visible light is used. Is relatively reduced. This increases the transmission of light to the back,
As a result, it is possible to eliminate the necessity of thinly polishing the back surface of the chip of the semiconductor device in order to secure the amount of light when the circuit image is captured from the back surface. Further, the risk of destruction due to excessive polishing can be eliminated.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
FIG. 1 shows a configuration example of an analyzer according to an embodiment of the present invention. In FIG. 1, 1 is an irradiation unit, 2 is a light receiving unit capable of receiving transmitted light in a semiconductor device described later,
3 is a light amount adjusting jig of the irradiating means 1, 4 is a pedestal, 5 is a jig for rotating the irradiating means 1, 6 is a jig for tilting the irradiating means 1, 7 is a jig for moving the irradiating means 1 in the horizontal direction, Reference numeral 8 denotes a jig for moving the light receiving means 2 in the horizontal and vertical directions.

In FIG. 1, reference numerals 9 and 10 denote dark boxes, 11 denotes image recording / display means, and 12 denotes power / signal supply means. The semiconductor device 100 whose failure is to be analyzed is fixed in advance to the opening of the dark box 9 using a rack (not shown) so that no gap is formed. In this case, the back surface 100b is exposed to the outside of the dark box 9 from the opening provided in a part of the dark box 9, and the front surface 100a faces the inside of the dark box 9. It is assumed that the front and back surfaces of the integrated circuit chip inside the semiconductor device 100 are exposed as described later.

Here, a method of exposing the front and back surfaces of the integrated circuit chip inside the semiconductor device 100 used in the present embodiment will be described with reference to FIGS. First, FIG. 2 conceptually shows a cross-sectional structure of a general semiconductor device. The integrated circuit chip 101 is bonded to the die frame 106 using, for example, a silver paste or a solder paste (not shown) after previously laminating the aluminum wiring 103 and the like. Then, the frame 1 is connected via the bonding wire 105 of the ball bonding 104.
07 and then sealed with a package resin 102.

In this embodiment, as shown in FIG. 3, the semiconductor device 100 is previously prepared by a chemical method such as a chemical.
Of the package resin 102 on the front and back sides of the integrated circuit chip 101 are removed. After that, the die frame 106 to which the integrated circuit chip 101 is adhered is removed, the front and back surfaces of the integrated circuit chip 101 are exposed, and the processing is performed so that the bonding wires 105 remain in a normal state.

When the semiconductor device 100 is described, it means that the front and back surfaces of the internal integrated circuit chip 101 are exposed as described above. However, the method of exposing the front and back surfaces of the internal integrated circuit chip 101 is not limited to this. In the present embodiment, a gate array having a length of 28 mm, a width of 28 mm, and a thickness of 4 mm is used as an example, but the external shape and type of the failed semiconductor device are not limited to this.

In the above configuration, the semiconductor device 100
An optical microscope and a high-sensitivity camera capable of sensing infrared light are used as the light receiving means 2 for receiving infrared light from the back surface 100b side of the camera. The light receiving means 2 is installed together with the horizontal and vertical movement jigs 8 on the dark box 10 via a stand (not shown). As the irradiation means 1, an infrared LED (one LED) is used. The light irradiation means 1 includes a rotating jig 5,
The semiconductor device 100 in the dark box 9 is installed and fixed at a position where the semiconductor device 100 can be irradiated with light via the jig 6 for tilting, the jig 7 for moving in the horizontal direction, and the pedestal 4. As the light amount adjusting jig 3 of the light irradiation means 1, for example, a slit (which may be a commercially available product) that changes the optical path area through which light passes is suitable.

The light amount adjusting jig 3 of the light irradiation means 1 is not limited to the slit. A personal computer is used as the image display means 11 and is electrically connected to the light receiving means 2 using a cable (not shown). As the power / signal supply means 12, an LSI tester is used, and is electrically connected to the semiconductor device 100 using a cable, a clip, a probe, or the like (not shown). The dark box 9 and the dark box 10 are sealed so that outside light does not enter the inside, and the inner walls thereof are coated with, for example, matte black to perform a light reflection preventing treatment.

Next, the operation procedure of the failure analyzer according to the present embodiment will be described. First, power is supplied to the infrared LED of the light irradiation means 1 using a power supply (not shown) to emit infrared light. Surface 100 of semiconductor device 100
After irradiating the infrared light of the irradiation means 1 to the light-receiving means a, the transmitted light from the back surface 100b side is sensed by the optical microscope and the high-sensitivity camera as the light receiving means 2. Then, the personal computer as the image recording / display unit 11 records the image as a back surface circuit pattern image observed from the back surface 100b of the semiconductor device 100.

Next, the power of the infrared LED of the irradiating means 1 is turned off, and specific power and a signal are supplied to the semiconductor device 100 from an LSI tester which is a power / signal supplying means 12 to put the semiconductor device 100 into an operating state. To After this, the back surface 10 of the semiconductor device 100
The weak light emission from the defective part of the semiconductor device 100 is sensed by the high sensitivity camera as the light receiving means 2 from the 0b side. Then, a personal computer as the image recording / display means 11 is recorded as a back surface light emission image of the defective portion observed from the back surface 100b.

Next, the backside circuit pattern image already recorded by the personal computer as the image recording / display means 11 and the backside light emission image of the defective portion recorded in the same manner are simultaneously superimposed using image processing software. To display. By superimposing and displaying in this manner, the semiconductor device 1
It is possible to specify where on the circuit the weak light emission from the 00 failure location is located, that is, the failure location.

Next, a second embodiment of the present invention will be described. In the present embodiment, the infrared light L
The difference from the first embodiment is that an infrared laser diode is used instead of the ED. Other configurations are substantially the first
This is the same as the embodiment. Therefore, in the second embodiment, similarly to the first embodiment, as an example of the semiconductor device 100, the length is 28 mm, the width is 28 mm, and the thickness is 4 mm.
And using the method described in the first embodiment to expose the front and back surfaces of the internal integrated circuit chip.

When the semiconductor device 100 is described, it means that the front and back surfaces of the internal integrated circuit chip are exposed as described above. However,
The method of exposing the front and back surfaces of the integrated circuit chip inside the semiconductor device 100 is not limited to this. Also,
The external shape and type of the failed semiconductor device are not limited to those described above.

First, the irradiation means 1 in the second embodiment
Will be described. In the second embodiment, seven infrared laser diodes 13 are used as the irradiation means 1 as shown in FIG. These infrared laser diodes 1
3 are arranged on the pedestal 4 so as to be located on the same plane and at the vertex of the regular hexagon and the center thereof. Irradiation means 1
Light amount adjusting jig 3 (see FIG. 1) and laser diode 13
Condensing means 1 consisting of one glass convex lens
4 is provided.

Power is supplied to the seven infrared laser diodes 13 using a power supply (not shown), and the seven laser beams generated by the power are converged to a desired area by the convex lens which is the focusing means 14. The convergent light is applied to the surface 100a of the semiconductor device 100. In this case, the rotation jig 5, the tilt jig 6, and the horizontal movement jig 7 of the light irradiation means 1 are used for adjusting the optical axis of the converged laser light and adjusting the horizontal position, respectively. These are contrivances in that the irradiation range of each laser beam is narrower than the area of the semiconductor device 100.

In the second embodiment, seven infrared laser diodes 13 as the light irradiating means 1 are arranged on the same plane, each being located at the vertex of a regular hexagon and the center thereof. The number of laser diodes 13 and the method of arranging them are not limited to this. Further, although one convex lens made of glass is used as the light condensing means 14 for converging the laser light to a desired area, a prism, a mirror, an optical fiber, or the like may be used instead of the lens.

Further, when the present invention is applied to a plurality of semiconductor devices having different shapes, when observing the backside circuit pattern, the luminance becomes insufficient and the circuit pattern becomes invisible.
Alternatively, on the contrary, there is a case where the luminance is too strong and the high-sensitivity camera is saturated so that an image cannot be recorded. Also in these cases, by adjusting the slit used as the light amount adjusting jig 3 of the light irradiation means 1 in the same manner as in the first embodiment, a laser beam having an intensity suitable for measurement was obtained. The light amount adjusting jig 3 of the irradiation unit 1 is not limited to the slit. According to the failure analysis device of the second embodiment configured as described above, an extremely clear backside circuit pattern was obtained as a result.

Next, the power of the infrared laser diode 13 of the light irradiating means 1 is turned off, and the semiconductor device 100 is moved to the first state.
The operation state is set in the same procedure as in the embodiment. The weak light emission from the defective portion at this time is recorded in the same procedure as in the first embodiment, and the rear surface circuit pattern image already recorded and the rear surface light emission image of the defective portion are finally displayed at the same time. Also in this case, it is possible to specify the position on the circuit of the semiconductor device 100 where the weak light emission from the faulty portion of the semiconductor device 100 is located.

Next, a third embodiment of the present invention will be described. In the present embodiment, the point that an infrared laser diode 13 is used as the light irradiation means 1 is the same as the second embodiment. Also, as shown in FIG. 5, the laser light is diffused by using one laser diode 13 and the diffusing means 15 to secure an irradiation area of the laser light corresponding to the area of the desired semiconductor device. different.

In the third embodiment, similarly to the first embodiment, the semiconductor device 100 has a height of 28 m as an example.
Using a gate array of m, 28 mm in width and 4 mm in thickness, the front surface and the back surface of the internal integrated circuit chip are exposed using the method described in the first embodiment.

When the semiconductor device 100 is described, it means that the front and back surfaces of the internal integrated circuit chip are exposed as described above. However,
The method of exposing the front and back surfaces of the integrated circuit chip inside the semiconductor device 100 is not limited to this. Also,
The external shape and type of the failed semiconductor device are not limited to those described above.

First, the light irradiation means 1 in the third embodiment will be described. In the third embodiment, an infrared laser diode 13 (one piece) similar to that of the second embodiment is installed on the pedestal 4 as the light irradiating means 1, and the infrared laser diode 13 and a light amount adjusting jig of the light irradiating means 1 are provided. 3, the diffusion means 15 is arranged as shown in FIG. In this embodiment, a convex mirror in which a silver thin film is deposited on a convex lens made of glass or a diffusion plate (a commercially available product) is used as the diffusion unit 15.

Power is supplied to the infrared laser diode 13 using a power supply (not shown), and one laser beam generated by this is dispersed to a desired area by using a convex mirror or a diffusion plate of the diffusion means 15. When the dispersed laser light was applied to the surface 3a of the semiconductor device 100, an irradiation area sufficient for observation could be secured in each case.

In the third embodiment, a convex mirror made by depositing a silver thin film on one glass is used as the diffusing means 15 for dispersing the laser light into a desired area. However, the material of the convex mirror and the mirror portion on the surface are used. The material is not limited to this.

Further, when the present invention is applied to a plurality of semiconductor devices having different shapes, when observing the backside circuit pattern, the luminance becomes insufficient and the circuit pattern becomes invisible.
Alternatively, on the contrary, there is a case where the luminance is too strong and the high-sensitivity camera is saturated so that an image cannot be recorded. Also in these cases, by adjusting the slit used as the light amount adjusting jig 3 of the light irradiation means 1 in the same manner as in the first embodiment, a laser beam having an intensity suitable for measurement was obtained. According to the failure analysis device of the third embodiment configured as described above, an extremely clear backside circuit pattern was obtained.

Next, the power of the infrared laser diode 13 of the light irradiating means 1 is turned off, and the semiconductor device 100 is moved to the first position.
The operation state is set in the same procedure as in the embodiment. The weak light emission from the defective portion at this time is recorded in the same procedure as in the first embodiment, and the rear surface circuit pattern image already recorded and the rear surface light emission image of the defective portion are finally displayed at the same time. Also in this case, it is possible to specify the position on the circuit of the semiconductor device 100 where the weak light emission from the faulty portion of the semiconductor device 100 is located.

Next, a fourth embodiment of the present invention will be described. In the present embodiment, the point that a laser diode 13 is used as the light irradiation means 1 is the same as in the second and third embodiments. In particular, in the fourth embodiment, a plurality of laser diodes having different wavelength ranges of generated laser light are prepared in advance. Then, one of the plurality of laser diodes 13
By selecting the type of laser diode, the wavelength range of the irradiation laser light is made variable.

In the fourth embodiment, similarly to the first embodiment, as an example of the semiconductor device 100, the vertical length is 28 m.
Using a gate array of m, 28 mm in width and 4 mm in thickness, the front surface and the back surface of the internal integrated circuit chip are exposed using the method described in the first embodiment. Thereafter, as described later, a trial was performed by preparing a chip having a different thickness of the inner chip and a different thickness and material of the back metal, but in each case, the opening processing was performed using the method described in the first embodiment. Use what was done.

When the semiconductor device 100 is described, it means that the front and back surfaces of the internal integrated circuit chip are exposed as described above. However,
The method of exposing the front and back surfaces of the internal integrated circuit chip is not limited to this. Further, the external shape and type of the failed semiconductor device are not limited to these.

First, the light irradiation means 1 according to the fourth embodiment will be described. In the fourth embodiment, a laser diode 13 having a different wavelength range is used as the light irradiation means 1.
a, 13b, and 13c are prepared for each of seven pieces. These laser diodes 13 are arranged at the vertex of a regular hexagon and the center thereof on the same plane as in the second embodiment as shown in FIG. Then, the laser diodes located at the center of each regular hexagon are arranged so as to be located on a straight line. In addition, the laser diode 13a is connected to the second or third laser diode.
This is the same as that used in the embodiment.

Next, the seven laser diodes 13a shown in FIG. 6 among these 21 laser diodes are moved so as to be located immediately below the semiconductor device 100. Power is supplied to the laser diode 13a using a power supply (not shown), and the seven laser beams generated thereby are converged to a desired area via the light condensing means 14 to irradiate the surface 100a of the semiconductor device 100. . The light condensing means 14 is made of one glass convex lens as in the case of the second embodiment. Then, the backside circuit pattern of the semiconductor device 100 is observed.

The laser diode 13 is operated in the same procedure as described above.
Observation of the backside circuit pattern of the semiconductor device 100 using b and 13c revealed a difference in the sharpness of the contour of the backside circuit pattern. The sharpness was highest when the laser diode 13c was used, and was clearer than in the second embodiment.

Next, as the semiconductor device 100, one having a different internal chip thickness, back metal thickness and material from those described above is prepared, and the laser diodes 13a, 13b, 13c are replaced each time by the same procedure as described above. Used while
The backside circuit pattern of the semiconductor device 100 is observed.
There was a difference in the sharpness of the contour of the back circuit pattern, and the sharpness was highest when the laser diode 13b was used, which was almost the same as in the second embodiment.

The above observations were made using several types of semiconductor devices 100 having different thicknesses of internal chips, back metal thicknesses and materials. As a result, the laser diodes 13a,
A clear backside circuit pattern equivalent to or higher than that of the second embodiment was obtained in any of 13b and 13c.

Next, the power of the infrared laser diode 13 of the light irradiating means 1 is turned off, and the semiconductor device 100 is moved to the first position.
The operation state is set in the same procedure as in the embodiment. The weak light emission from the defective portion at this time is recorded in the same procedure as in the first embodiment, and the rear surface circuit pattern image already recorded and the rear surface light emission image of the defective portion are finally displayed at the same time. Also in this case, it is possible to specify the position on the circuit of the semiconductor device 100 where the weak light emission from the faulty portion of the semiconductor device 100 is located.

As described above, by using the apparatus of this embodiment to switch the wavelength range of laser light, the semiconductor device 100 having a different chip thickness, back metal thickness and material can be used as a second device. It was confirmed that a clear backside circuit pattern equivalent to or higher than that of the embodiment was obtained. It is possible to measure and record weak light emission from a defective portion when the semiconductor device 100 is put into an operating state in the same procedure as in the first embodiment from the back surface 100b side in the same procedure as in the first embodiment. Finally, by displaying the already recorded backside circuit pattern image and the backside light emission image of the defective portion at the same time, it is possible to determine at which position on the circuit of the semiconductor device the weak light emission from the faulty portion of the semiconductor device 100 is located. Could be identified.

[0050]

As described above, according to the present invention, the trouble of reversing the semiconductor device and precisely positioning the semiconductor device in this kind of failure analysis apparatus can be saved, and a complicated positioning apparatus is not required. Efficiency can be realized. In addition, there is an advantage that the amount of light transmitted to the back surface of the semiconductor device increases, and the amount of light at the time of capturing a circuit image can be effectively secured. In addition, by using infrared light as a light source when irradiating light from the chip surface of the semiconductor device, the light emitted by the semiconductor device itself can be compared with the case where a conventional halogen light source of visible light is used. The absorption is relatively reduced, and the transmission of light to the back surface is increased. As a result, the back surface of the semiconductor device chip does not need to be thinly polished in order to secure a sufficient amount of light when a circuit image is captured from the back surface. Further, there is an effect that the risk of destruction due to excessive polishing is reduced.

[Brief description of the drawings]

FIG. 1 is a diagram showing an overall configuration of an apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram conceptually showing a cross-sectional structure of a general semiconductor device.

FIG. 3 is a diagram conceptually showing a cross-sectional structure of a semiconductor device in which a front surface and a back surface of an internal integrated circuit chip are exposed.

FIG. 4 is a diagram illustrating a configuration example of a light irradiation unit according to a second embodiment of the present invention.

FIG. 5 is a diagram illustrating a configuration example of a light irradiation unit according to a third embodiment of the present invention.

FIG. 6 is a diagram illustrating a configuration example of a light irradiation unit according to a fourth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Light irradiation means 2 Light receiving means 3 Light quantity adjustment jig 4 Pedestal 5 Rotation jig 6 Inclination jig 7 Horizontal movement jig 8 Horizontal / vertical movement jig 9, 10 Dark box 11 Image recording / display means 12 Power / Signal Supply Means 13 Infrared Laser Diode 14 Focusing Means 15 Diffusion Means 100 Semiconductor Device 101 Integrated Circuit Chip 102 Package Resin 103 Aluminum Wiring 104 Ball Bonding 105 Bonding Wire 106 Die Frame 107 Frame

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Claims (4)

[Claims] An electric power and / or a signal is supplied to a semiconductor device having an exposed front surface and a back surface of an integrated circuit chip, and weak light generated from a failed portion of the semiconductor device is observed to detect the failed portion. A failure analysis apparatus configured to identify, comprising: a light irradiation unit that irradiates infrared light from a surface side of the semiconductor device; and an adjustment unit that adjusts intensity and an optical axis of irradiation light irradiated by the light irradiation unit. Means, power and / or signal supply means for supplying power and / or a signal to the semiconductor device, light receiving means for receiving the transmitted light and weak light emission from the back side of the semiconductor device, and light received by the light receiving means Record as an image,
An image recording / displaying means capable of displaying a plurality of recorded images in a superimposed manner on a screen. 2. The failure analysis apparatus according to claim 1, wherein said light irradiating means has a wavelength switching means for switching a wavelength of infrared light irradiating said semiconductor device. 3. A front-side circuit pattern of the semiconductor device, wherein infrared light is radiated to the front side of the semiconductor device with the front and back surfaces of the integrated circuit chip exposed, and transmitted light from the back side of the semiconductor device is detected. An image is recorded as a backside circuit pattern image equivalent to a reversed one, and power and / or a signal is supplied to the semiconductor device to detect weak light generated from a failure location,
It is recorded as a back-side emission image of light generated at the failure location, the back-side circuit pattern image and the back-side emission image are displayed in an overlapping manner, and the position of the failure location in the electric circuit of the semiconductor device is specified. Failure analysis method. 4. The failure analysis method according to claim 3, wherein when irradiating the infrared light to the surface side of the semiconductor device, the wavelength of the irradiation light is switched.