JP2001167997A - Aligner and device manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the throughput of an aligner itself by suppressing excess rise of the pressure of a gas on the optical path of the apparatus, to reduce the internal damage rate of an optical system containing a container and an optical element or the like of the container, to prevent deterioration of the optical characteristics, and hence to decrease the apparatus stoppage time due to maintenance. SOLUTION: This aligner has a light source 1, an illumination optical system 6 for illuminating a pattern drawn on a mask 5 by a light source light, and a projection optical system 11 for projecting the illuminated pattern to a substrate 13. The aligner comprises containers 7, 14, 17 for shielding the overall or part from the source 1 to the substrate 13 from the atmosphere, an insert gas supply and exhaust lines connected to the containers, and pressure regulating means 21 to 23, provided at positions on the containers or equivalent under pressure to the containers and/or positions on the supply or exhaust line or equivalent under pressure to the supply or exhaust line, and a method for manufacturing devices using the aligner is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus that prints a pattern such as a mask (also referred to as a reticle) on a substrate in a lithography step for manufacturing a semiconductor element, a liquid crystal substrate, etc. The present invention relates to a device manufacturing method using the same.

[0002]

2. Description of the Related Art Conventionally, in a manufacturing process of a semiconductor element formed from an extremely fine pattern such as an LSI or a super LSI, a reduced projection exposure apparatus has been used. In such a reduced projection exposure apparatus, further miniaturization of a pattern is required in accordance with an increase in the mounting density of a semiconductor element, and the development of a resist process is required to cope with the miniaturization of the exposure apparatus.

As means for improving the resolution of the exposure apparatus, there are a method of changing the exposure wavelength to a shorter wavelength and a method of increasing the numerical aperture (NA) of the projection optical system. In general, it is known that the resolving power is inversely proportional to the exposure wavelength and proportional to the numerical aperture. Efforts have also been made to improve the resolving power while ensuring the depth of focus of the projection optical system. In general, the depth of focus is proportional to the exposure wavelength,
It is known that the improvement of the resolving power and the securing of the depth of focus are contradictory to each other.

With respect to the exposure light, a KrF excimer laser having a center wavelength around 248 nm has become the mainstream from i-line having a center wavelength around 365 nm, and more recently a center wavelength around 193 nm. An ArF excimer laser having the following formula is used. The wavelength of the exposure light is further reduced.

On the other hand, in a conventional exposure apparatus using a mercury lamp that emits g-line or i-line light or a KrF excimer laser having a center wavelength at 248 nm as a light source, the emission spectrum lines of these light sources correspond to the oxygen absorption spectrum region. Did not overlap, and there was no inconvenience caused by a decrease in light use efficiency due to absorption of oxygen and generation of ozone due to absorption of oxygen. Therefore, with these exposure apparatuses, exposure in the air atmosphere was possible.

However, in an exposure apparatus that uses i-line (wavelength: 365 nm) as exposure light or an exposure apparatus that uses light having a wavelength shorter than i-line as exposure light, impurities and oxygen in the air are exposed to the exposure light having such short wavelength. Is known to cause a photochemical reaction, and the product adheres to the optical element, causing an opaque “cloudy substance” in the optical element (glass member). Here, the term “cloudy substance” refers to, for example, ammonium sulfate (NH ₄ ) ₂ SO ₄ which is generated by reacting with ammonia NH ₃ in the air when SO ₂ gas absorbs light energy and becomes excited. It is.
The ammonium sulfate is white and, when adhered to the surface of an optical element such as a lens, causes the "cloudy" state. The exposure light is scattered and absorbed by the ammonium sulfate, resulting in a decrease in the transmittance of the exposure light.

If a "cloudy substance" such as ammonium sulfate adheres to a plurality of optical elements such as lenses and mirrors arranged in an illumination optical system or a projection optical system, the optical elements are fixed while being held. However, it is necessary to disassemble for cleaning, and the workability is extremely poor.

As a means for preventing the deterioration of the optical element due to the "fogging", conventionally, the entire optical path is filled with high-purity air or an inert gas.

In a light source such as the ArF excimer laser, the emission spectrum line overlaps the oxygen absorption spectrum region, so that the above-described inconvenience is caused by the generation of ozone due to the absorption of oxygen. For example, assuming that the transmittance of ArF excimer laser light in a vacuum or in an inert gas atmosphere such as nitrogen or helium is 100%, the ArF excimer laser in a spontaneous emission state has a spectral width of 90%, a narrower spectrum width, and a smaller oxygen width. The transmittance is reduced to 98% even when an ArF laser in which the absorption band is avoided is used.

It is considered that such a decrease in transmittance is due to the absorption of light by oxygen and the influence of ozone generated thereby. The generation of ozone not only lowers the transmittance, but also degrades the performance of the device due to the reaction with the optical material surface and other components, and causes environmental pollution.

As described above, in an exposure apparatus having a light source such as an ArF excimer laser, it is necessary to fill the entire optical path with an inert gas such as nitrogen in order to avoid the decrease in light transmittance and ozone generation. It is well known that this is one of the means.

In general, an exposure apparatus includes an illumination optical system for uniformly illuminating a mask with light from a light source, a projection optical system for forming a circuit pattern formed on the mask on a wafer, and a projection optical system. It has stage means for supporting and moving and positioning it as appropriate.

[0013]

In the exposure apparatus having the above-described structure, it is necessary to perform purge control using an inert gas or the like. That is, compared to a KrF excimer laser having a center wavelength near 248 nm, an ArF excimer laser having a center wavelength near 193 nm has a higher ozone generation rate, thus not only causing environmental pollution but also causing various products to adhere to the optical element. It is known that optical characteristics are degraded. In addition, since the optical index (refractive index) differs depending on the gas component, when the purge gas component becomes unstable, various optical aberrations are generated, which significantly affects the imaging characteristics.

However, according to the above-mentioned prior art, since the container for housing the optical system is not highly sealed,
An inert gas is supplied each time exposure is started, and the exposure apparatus is kept on standby until the oxygen concentration in the container drops to a predetermined value, or the supply of the inert gas is performed even when the exposure apparatus is inactive. We need to continue. In the former case, the standby time of the exposure apparatus becomes longer, thereby causing a decrease in throughput. In the latter case, a large amount of inert gas is consumed to always supply the inert gas.

At this time, a supply line for supplying the inert gas to the container accommodating the optical system includes an opening / closing valve provided in the supply line, a gas flow path switching unit, and the start of driving of the light source of the optical system. Control means for opening and closing the on-off valve in synchronization with each stop and for driving the flow path switching means based on a predetermined program after the on-off valve is opened.
Alternatively, after the driving of the light source is started, oxygen in the container is monitored by a sensor, and after the oxygen concentration falls below a predetermined value, the flow path switching means operates.

If any malfunction occurs during the operation of these control systems, an excessive amount of inert gas is supplied into the container, and the pressure of the inert gas in the container increases, affecting the position and posture of the lens. This not only impairs good optical characteristics, but also damages the container and the optical components.

Further, from the viewpoint of the manufacturing cost of a semiconductor device, further improvement in throughput is required.

According to the present invention, the gas pressure on the optical path of the exposure apparatus is suppressed from exceeding a desired value, the throughput of the exposure apparatus itself is improved, the optical system storage container, the optical element disposed in the container, and the like. The purpose of the present invention is to reduce the internal damage rate or prevent the optical characteristics from deteriorating, and to reduce the downtime of the apparatus due to maintenance.

[0019]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and a first exposure apparatus of the present invention illuminates a light source and a pattern drawn on a mask with light from the light source. An illumination optical system that has a projection optical system that projects the illuminated pattern onto a projection substrate, and a container that approximately shields the whole or a part of the light source from the light source to the projection substrate with respect to ventilation with outside air. A supply line and a discharge line for the inert gas connected to the container, and at least one position on the container or at a pressure equivalent to the container and / or on the supply line or the discharge line or the supply line or An exposure apparatus is provided with a pressure adjusting means at at least one position which is pressure equivalent to the discharge line.

According to a second exposure apparatus of the present invention, in the first exposure apparatus, the pressure adjusting means is provided when the inert gas in the container exceeds a desired pressure and reaches a preset pressure. Automatically discharging the inert gas out of the container, and when the inert gas drops to a desired pressure value, terminating the discharge of the inert gas and ending the pressure value of the inert gas in the container. Is maintained at a desired pressure value.

According to a third exposure apparatus of the present invention, in the first exposure apparatus, the pressure adjusting means is arranged so that the inert gas in the supply line exceeds a desired pressure value and reaches a predetermined pressure value. Automatically discharges the inert gas out of the supply line. When the inert gas drops to a desired pressure value, the discharge of the inert gas is terminated and the inert gas in the supply line is stopped. The pressure value of the active gas is maintained at a desired pressure value.

According to a fourth exposure apparatus of the present invention, in the first exposure apparatus, the pressure adjusting means is configured to control the pressure of the inert gas in the discharge line to exceed a desired pressure value and reduce the pressure to a preset pressure value. When it becomes, the inert gas is automatically discharged through a path different from the discharge line, and when the inert gas drops to a desired pressure value, the discharge of the inert gas is terminated and the discharge line is discharged. The pressure value of the inert gas is maintained at a desired pressure value.

According to a fifth aspect of the present invention, in the exposure apparatus of any one of the first to fourth aspects, the pressure adjusting means has means for releasing the inert gas to the outside air according to the pressure value. It is characterized by.

A sixth exposure apparatus according to the present invention is the exposure apparatus according to any one of the second to fourth aspects, wherein the pressure adjusting means has means for adjusting the preset pressure value in advance. I do.

In a seventh exposure apparatus according to the present invention, in the fifth exposure apparatus, the pressure adjusting means may be irregularly irrespective of an operation state of the exposure apparatus main body according to a pressure value of the inert gas. It is characterized by having means for adjusting the pressure value. By using this pressure adjusting means, when the exhaust system becomes inoperable for some reason, the pressure increase of the inert gas in the container can be automatically suppressed.

An eighth exposure apparatus according to the present invention is the exposure apparatus according to any one of the fifth to seventh aspects, wherein the container accommodates the illumination optical system while substantially shielding the illumination optical system from the outside air. A purge means for purging with a inert gas.

A ninth exposure apparatus according to the present invention is the exposure apparatus according to any one of the fifth to seventh exposure apparatuses, wherein the container accommodates the projection optical system while substantially shielding the projection optical system from the outside air. A purge means for purging with a inert gas.

A tenth exposure apparatus according to the present invention is the exposure apparatus according to any one of the fifth to seventh exposure apparatuses, wherein the container accommodates the light source while substantially shielding the light source from ventilation with the outside air. It has a purging means for purging with an active gas.

An eleventh exposure apparatus according to the present invention is the exposure apparatus according to any one of the fifth to seventh exposure apparatuses, wherein the mask is housed in such a manner that the mask is substantially shielded from ventilation with outside air, and the inside of the container is filled with an inert gas. It has a purging means for purging.
The device manufacturing method of the present invention is characterized in that any one of the first to eleventh exposure apparatuses is used.

[0030]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram schematically illustrating a configuration of an exposure apparatus according to the first embodiment. The illustrated device includes a light source 1 that emits short-wavelength laser light such as an ArF excimer laser. The light beam emitted from the light source 1 is reflected by the reflecting mirror 2,
The light reflected from the masks 3 and 4 is uniformly irradiated on the mask 5 through an appropriate illumination optical element (not shown). In the path from the light source 1 to the mask 5, the illumination optical system 6 is roughly shielded from the outside air by a container 7. The container includes an inert gas supply source (purge means) 8, a valve 9, an oxygen sensor 10. , A nitrogen gas is supplied as an inert gas.

The light transmitted through the mask 5 is transmitted to the projection optical system 11.
Reaches the surface of the wafer 13 placed on the wafer stage 12 via various optical elements (not shown) constituting the above, and forms an image of the pattern drawn on the mask. Here, the projection optical system 11 is also shielded from the outside air by the container 14, and the container is supplied with nitrogen gas from the inert gas supply source 8 via the valve 15 and the oxygen sensor 16.

Further, since the mask 5 is opened to the outside air when it is replaced, the mask 5 is provided in a container 17 which is independent of the illumination optical system 6 and the projection optical system 11 and shields the ventilation from the outside air. Alternatively, it is also possible to adopt a structure in which the container 17 can be supplied together with the supply of the nitrogen gas to the container 7. In this case, when the container 17 is opened, a shielding means for spatially shielding the container 7 and the container 17 is provided. . In any case, the container 17 is supplied with an inert gas, for example, nitrogen gas from an inert gas supply source 18 via a valve 19 and an oxygen sensor 20.

As shown in FIG. 1, a pressure adjusting mechanism 21 according to the present invention is disposed, for example, at a position immediately before supplying nitrogen gas to the illumination optical system 6, and a container 7 containing the illumination optical system 6 is provided.
When the inert gas in the gas exceeds the desired pressure and reaches a preset pressure, the pressure adjusting mechanism 21 automatically discharges the inert gas to the outside of the container 7, and the inert gas becomes the desired pressure value. , The discharge of the inert gas is terminated, and the pressure of the inert gas in the container 7 is maintained at a desired value.

Similarly, the pressure adjusting means 22 and 23 are also disposed, for example, immediately before the supply of nitrogen gas to the projection optical system 11 and the mask space 5, respectively, and the inert gas in the containers 14 and 17 containing these, respectively, is desired. When the pressure exceeds a predetermined pressure and reaches a preset pressure value,
2, 23 automatically discharges the inert gas to the outside of the container, and when the inert gas drops to a desired pressure value, terminates the discharge of the inert gas and removes the inert gas in the container to the desired pressure. Keep in value.

FIG. 2 is a diagram schematically showing the configuration of an exposure apparatus according to another embodiment of the present invention. As shown in FIG. 2, the pressure adjusting mechanism 21 according to the present invention is disposed, for example, on a nitrogen gas discharge line of the illumination optical system 6 so that the inert gas in the container 7 exceeds a desired pressure value and is set in advance. When the pressure value reaches the set pressure value, the inert gas is automatically discharged from a line different from the discharge line, and when the inert gas drops to a desired pressure value, the discharge of the inert gas is terminated, and the container is discharged. The pressure value of the inert gas is maintained at a desired pressure value.

Similarly, the pressure adjusting means 22 and 23 are also disposed on, for example, the projection optical system 11 and the discharge line of the nitrogen gas in the mask space 5 so that the inert gas in the containers 14 and 17 has a desired pressure value. When the pressure reaches a preset pressure value, the inert gas is automatically discharged from a line different from the discharge line, and the discharge of the inert gas is terminated when the inert gas drops to a desired pressure value. Then, the inert gas in the container is maintained at a desired pressure value.

FIG. 3 shows another embodiment of the projection optical system 11 according to the present invention, in which the optical elements of the projection optical system are partially cut off from the outside air. Optical element 31,
32 is a container 33, and optical elements 34, 35 and 36 are a container 3
7, the ventilation with the outside air is roughly blocked, and in this example, the ventilation with the outside air of the containers 33, 37 is roughly blocked with the large container 38. The container 38 is provided with a window 3 so as to transmit light to the optical elements 31, 32, 34 to 36.
9 and 40 are provided. The flexible pipes 41 and 4 are used so that the vessels 33 and 37 are pressure equivalent.
2, 43. The inert gas flows in the direction of arrows III to IV.

The pressure adjusting mechanisms 44 and 45 according to the present invention
For example, they are arranged in containers 38 and 37, respectively,
When the inert gas in 8, 37 exceeds a desired pressure value and reaches a preset pressure value, the inert gas is automatically discharged from a line different from the discharge line, and the inert gas is discharged at a desired pressure. When the pressure falls to a value, the discharge of the inert gas is terminated, and the pressure value of the inert gas in the container is maintained at a desired pressure value. These pressure adjusting mechanisms 44 and 45 may operate independently.

As shown by a dotted line in FIG. 3, the pressure adjusting mechanism 45 according to the present invention is directly connected to the container 3 via a pipe 46.
Means for discharging the surplus inert gas may be added to the outside of FIG.

Although the projection optical system has been described in the embodiment shown in FIG. 3, an exposure apparatus characterized in that the above-described structure is adopted in at least a part or all of the illumination optical system and the mask space may be adopted. .

FIG. 4 is a schematic sectional view of some embodiments of the pressure adjusting mechanism according to the present invention. The pressure receiving movable element 51 in (a) is fixed to the space inside the pressure adjusting mechanism by a spring 52. When the gas I flows into this pressure adjusting mechanism when the internal pressure of the container 7 or the like housing the illumination optical system exceeds a desired pressure value and reaches a preset pressure value, the gas I receives the pressure and receives a pressure. When the receiving movable element 51 moves upward and separates from the seal 53, the gas II is discharged. This gas II is a gas amount that can be adjusted.

The means for restraining the pressure receiving movable element 51 in the space inside the pressure adjusting mechanism is different from the spring 52 shown in FIG.
The weight 55 of (b) and the lever 56 of (c) may be used. By changing the strength and weight of these mover restraining means, the pressure value to be set in advance can be adjusted in advance.

Instead of the pressure receiving movable element 51, the pressure adjusting mechanism may include a sensor for detecting the pressure, and may adjust the pressure by an exhaust valve or the like according to the value. In this case, as shown in FIG. 5, the reading of the pressure gauge 57 is read by a control system (not shown), and when the pressure exceeds a preset pressure in accordance with the reading from the pressure gauge, the exhaust valve 58 is opened.
To release the inert gas and maintain the desired pressure value.

As described above, the flow of the gas in the pressure adjusting mechanism according to the present invention is, for example, limited to one direction of I → II in FIG. This prevents ventilation from outside air into the container.

In the above embodiment, nitrogen has been described as an example of the inert gas. However, an inert gas having no absorption spectrum of oxygen in the exposure wavelength region, for example, a gas such as helium may be used.

Further, in the above embodiment, the exposure apparatus using the ArF excimer laser and exposing the light in the wavelength range of 200 nm or less to the exposure light has been described as an example. It is apparent that the present invention can be effectively applied to a mask that does not like an oxygen atmosphere regardless of the exposure wavelength.

Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described. FIG. 6 shows a micro device (a semiconductor chip such as an IC or an LSI, a liquid crystal panel, a CC)
D, thin-film magnetic head, micromachine, etc.). In step 1 (circuit design), a device pattern is designed. Step 2 is a process for making a mask on the basis of the designed pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon or glass. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 7 shows the wafer process (step 4).
The detailed flow of is shown. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist processing), a resist is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus of the present invention to print the circuit pattern of the mask on a plurality of shot areas of the wafer by printing. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the production method of the present invention, it is possible to produce a large-sized device, which was conventionally difficult to produce, at low cost.

[0049]

The exposure apparatus of the present invention suppresses the gas pressure on the optical path from exceeding a desired value, improves the throughput of the exposure apparatus itself, and provides an optical system storage container and the optical system storage container. In addition, it is possible to prevent a reduction in the internal breakage rate of the optical element and the like and deterioration of the optical characteristics, and to reduce the downtime of the apparatus due to maintenance.

[Brief description of the drawings]

FIG. 1 is a schematic view of an exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic view of an exposure apparatus according to another embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view in which an optical element of a projection optical system is partially cut off from ventilation with outside air.

FIG. 4 is a schematic cross-sectional view of some embodiments of a pressure adjusting mechanism.

FIG. 5 is a schematic view of an exposure apparatus according to still another embodiment of the present invention.

FIG. 6 is a manufacturing flow of a micro device.

FIG. 7 is a detailed flow of a wafer process (Step 4).

[Explanation of symbols]

1: light source, 2, 3, 4: mirror, 5: mask (reticle), 6: illumination optical system, 11: projection optical system, 12: wafer stage, 13: wafer (photosensitive substrate), 7: illumination from light source 1 A container for substantially closing the optical system 6, 14: Projection optical system 1
1, a container for substantially sealing the mask space, 21: a pressure adjusting mechanism (light source to illumination optical system), 22:
Pressure adjusting mechanism (projection optical system), 23: pressure adjusting mechanism (mask space), 10: oxygen sensor (light source to illumination optical system),
16: oxygen sensor (projection optical system), 20: oxygen sensor (mask space), 8: inert gas supply source (light source to illumination optical system, projection optical system), 18: inert gas supply source (mask space), V: exhaust unit, 31, 32, 34, 35,
36: an optical element constituting the projection optical system; 33: a container for substantially blocking the ventilation of the projection optical system from the outside with the optical elements 31 and 32; and 37: a container for the optical elements 34, 35 and 36 of the projection optical system with the outside air. Vessel that roughly blocks ventilation, 38: Vessel that roughly blocks part of the projection optical system from ventilating outside air, 39, 40:
Windows, 41, 42, 43, 46: piping for supplying an inert gas to the containers 38, 33, 37; 44: a pressure adjusting mechanism arranged in the container 38; 45: a pressure adjusting mechanism arranged in the container 37; Active gas supply direction, IV: inert gas exhaust direction, I: flow direction of exhaust gas supplied to the pressure adjusting mechanism from the exposure apparatus, II: flow direction of exhaust gas discharged from the pressure adjusting mechanism, 51: pressure Receiving mover, 52:
Spring, 53, 54: seal, 55: weight, 56: lever, 57: pressure gauge, 58: exhaust valve.

Claims (12)

[Claims] 1. An exposure apparatus comprising: a light source; an illumination optical system for illuminating a pattern drawn on a mask with light from the light source; and a projection optical system for projecting the illuminated pattern onto a projection substrate. A container for substantially shielding the whole or a part of the container from the projection substrate to the outside air, a supply line and a discharge line for an inert gas connected to the container, and a pressure line on or above the container. An exposure apparatus comprising a pressure adjusting means at at least one position equivalent to the above and / or at least one position on the supply line or the discharge line or at a pressure equivalent to the supply line or the discharge line. 2. The pressure adjusting means automatically discharges the inert gas out of the container when the inert gas in the container exceeds a desired pressure and reaches a preset pressure. 2. The method according to claim 1, wherein the discharge of the inert gas is terminated when the inert gas drops to a desired pressure value, and the inert gas in the container is maintained at a desired pressure value. Exposure equipment. 3. The pressure adjusting means automatically moves the inert gas out of the supply line when the inert gas in the supply line exceeds a desired pressure and reaches a preset pressure. Discharging the inert gas when the inert gas drops to a desired pressure value, terminating the discharging of the inert gas, and maintaining the inert gas in the supply line at a desired pressure value. 2. The exposure apparatus according to 1. 4. The pressure adjusting means automatically changes the inert gas from the discharge line when the inert gas in the discharge line exceeds a desired pressure and reaches a preset pressure. Discharging through a passage, and when the inert gas drops to a desired pressure value, ending the discharge of the inert gas and maintaining the inert gas in the discharge line at a desired pressure value. The exposure apparatus according to claim 1. 5. An exposure apparatus according to claim 2, wherein said pressure adjusting means has means for releasing said inert gas to the outside air in accordance with a pressure value thereof. 6. The exposure apparatus according to claim 2, wherein the pressure adjusting unit has a unit that adjusts the value of the preset pressure in advance. 7. The apparatus according to claim 5, wherein the pressure adjusting means includes means for adjusting the pressure irregularly according to the pressure value of the inert gas, irrespective of the operation state of the exposure apparatus main body. 3. The exposure apparatus according to claim 1. 8. The container according to claim 5, further comprising a purging means for accommodating the illumination optical system while substantially shielding the illumination optical system from the outside air and purging the interior of the container with an inert gas. 8. The exposure apparatus according to claim 7. 9. The container according to claim 5, further comprising a purging means for accommodating the projection optical system while substantially shielding the projection optical system from outside air and purging the interior of the container with an inert gas. 8. The exposure apparatus according to claim 7. 10. The container according to claim 5, further comprising a purging means for accommodating the light source while substantially shielding the light source from the outside air and purging the interior of the container with an inert gas.
An exposure apparatus according to any one of claims 1 to 7. 11. The mask according to claim 5, further comprising a purging means for accommodating the mask so as to be substantially shielded from ventilation with outside air and purging the inside of the container with an inert gas. 3. The exposure apparatus according to claim 1. 12. A device manufacturing method using the exposure apparatus according to claim 1. Description: