JP2001167997A - Aligner and device manufacturing method therefor - Google Patents
Aligner and device manufacturing method thereforInfo
- Publication number
- JP2001167997A JP2001167997A JP35428799A JP35428799A JP2001167997A JP 2001167997 A JP2001167997 A JP 2001167997A JP 35428799 A JP35428799 A JP 35428799A JP 35428799 A JP35428799 A JP 35428799A JP 2001167997 A JP2001167997 A JP 2001167997A
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- Prior art keywords
- inert gas
- container
- exposure apparatus
- pressure
- optical system
- Prior art date
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、たとえば半導体素
子、液晶基板等を製造するためのリソグラフィー工程に
おいて、マスク(レチクルとも称する)等のパターンを
基板上に縮小投影して焼付成形する露光装置およびこれ
を用いたデバイス製造法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus that prints a pattern such as a mask (also referred to as a reticle) on a substrate in a lithography step for manufacturing a semiconductor element, a liquid crystal substrate, etc. The present invention relates to a device manufacturing method using the same.
【0002】[0002]
【従来の技術】従来、LSIあるいは超LSI等の極微
細パターンから形成される半導体素子の製造工程におい
て、縮小型投影露光装置が使用されている。このような
縮小型投影露光装置において、半導体素子の実装密度向
上に伴い、パターンのより一層の微細化が要求され、レ
ジストプロセスの発展と同時に露光装置の微細化への対
応が求められてきた。2. Description of the Related Art Conventionally, in a manufacturing process of a semiconductor element formed from an extremely fine pattern such as an LSI or a super LSI, a reduced projection exposure apparatus has been used. In such a reduced projection exposure apparatus, further miniaturization of a pattern is required in accordance with an increase in the mounting density of a semiconductor element, and the development of a resist process is required to cope with the miniaturization of the exposure apparatus.
【0003】露光装置の解像度を向上させる手段として
は、露光波長をより短波長に変えていく方法と、投影光
学系の開口数(NA)を大きくしていく方法がある。一
般には、解像力は露光波長に反比例し、開口数に比例す
ることが知られている。また、解像力を向上させる一方
で、投影光学系の焦点深度を確保するための努力もなさ
れている。一般に、焦点深度は露光波長に比例し、NA
の2乗に反比例してしまうため、解像力向上と焦点深度
確保とは相反することが知られている。As means for improving the resolution of the exposure apparatus, there are a method of changing the exposure wavelength to a shorter wavelength and a method of increasing the numerical aperture (NA) of the projection optical system. In general, it is known that the resolving power is inversely proportional to the exposure wavelength and proportional to the numerical aperture. Efforts have also been made to improve the resolving power while ensuring the depth of focus of the projection optical system. In general, the depth of focus is proportional to the exposure wavelength,
It is known that the improvement of the resolving power and the securing of the depth of focus are contradictory to each other.
【0004】露光光に関しては、365nm付近に中心
波長を有するi線から、現在では248nm付近に中心
波長を有するKrFエキシマレーザが主流となってお
り、さらには、近年になって193nm付近に中心波長
を有するArFエキシマレーザが使用されている。さら
に一層の露光光の短波長化が進行する。With respect to the exposure light, a KrF excimer laser having a center wavelength around 248 nm has become the mainstream from i-line having a center wavelength around 365 nm, and more recently a center wavelength around 193 nm. An ArF excimer laser having the following formula is used. The wavelength of the exposure light is further reduced.
【0005】一方、従来のg線、i線の光を射出する水
銀ランプや、248nmに中心波長を有するKrFエキ
シマレーザを光源とする露光装置では、これら光源の発
光スペクトル線は酸素吸収スペクトル領域とは重なら
ず、酸素の吸収による光利用効率の低下および酸素の吸
収によるオゾンの発生に起因する不都合は生じなかっ
た。したがって、これらの露光装置では、大気雰囲気中
における露光が可能であった。On the other hand, in a conventional exposure apparatus using a mercury lamp that emits g-line or i-line light or a KrF excimer laser having a center wavelength at 248 nm as a light source, the emission spectrum lines of these light sources correspond to the oxygen absorption spectrum region. Did not overlap, and there was no inconvenience caused by a decrease in light use efficiency due to absorption of oxygen and generation of ozone due to absorption of oxygen. Therefore, with these exposure apparatuses, exposure in the air atmosphere was possible.
【0006】しかしながら、i線(波長365nm)を
露光光とする露光装置、あるいはi線より短波長の光を
露光光とする露光装置においては、これら短波長の露光
光により空気中の不純物と酸素とが光化学反応を起こ
し、その生成物が光学素子に付着し、光学素子(ガラス
部材)に不透明な「曇り物質」を生じせしめることが知
られている。ここで、「曇り物質」というのは、たとえ
ば、亜硫酸SO2 ガスが光のエネルギーを吸収し励起状
態となると、空気中のアンモニアNH3と反応して生ず
る硫酸アンモニウム(NH4 )2 SO4 のことである。
この硫酸アンモニウムは白色で、レンズ等の光学素子表
面に付着すると、前記「曇り」状態を引き起こす。そし
て、露光光は硫酸アンモニウムにより散乱、吸収される
結果、露光光の透過率の低下を招く。However, in an exposure apparatus that uses i-line (wavelength: 365 nm) as exposure light or an exposure apparatus that uses light having a wavelength shorter than i-line as exposure light, impurities and oxygen in the air are exposed to the exposure light having such short wavelength. Is known to cause a photochemical reaction, and the product adheres to the optical element, causing an opaque “cloudy substance” in the optical element (glass member). Here, the term “cloudy substance” refers to, for example, ammonium sulfate (NH 4 ) 2 SO 4 which is generated by reacting with ammonia NH 3 in the air when SO 2 gas absorbs light energy and becomes excited. It is.
The ammonium sulfate is white and, when adhered to the surface of an optical element such as a lens, causes the "cloudy" state. The exposure light is scattered and absorbed by the ammonium sulfate, resulting in a decrease in the transmittance of the exposure light.
【0007】照明光学系や投影光学系の中に配置されて
いる複数のレンズ、ミラー等の光学素子に硫酸アンモニ
ウム等の「曇り物質」が付着すると、光学素子は保持し
た状態で固定されているため、清掃のためには分解する
必要があり、作業性は極めて悪い。If a "cloudy substance" such as ammonium sulfate adheres to a plurality of optical elements such as lenses and mirrors arranged in an illumination optical system or a projection optical system, the optical elements are fixed while being held. However, it is necessary to disassemble for cleaning, and the workability is extremely poor.
【0008】前記「曇り」による光学素子の劣化防止手
段として、従来より、高純度空気や不活性ガスで光路全
体を満たすことが行われている。As a means for preventing the deterioration of the optical element due to the "fogging", conventionally, the entire optical path is filled with high-purity air or an inert gas.
【0009】また、前記ArFエキシマレーザなどの光
源においては、その発光スペクトル線は酸素の吸収スペ
クトル領域と重なるため、上述の酸素の吸収によるオゾ
ンの発生に起因する不都合が生じる。たとえば、真空
中、あるいは窒素やヘリウムのような不活性ガス雰囲気
中でのArFエキシマレーザ光の透過率を100%とす
ると、自然発光状態におけるArFエキシマレーザでは
90%、スペクトル幅を狭め、かつ酸素の吸収帯をさけ
たArFレーザを使用した場合でも98%と、透過率が
低下する。In a light source such as the ArF excimer laser, the emission spectrum line overlaps the oxygen absorption spectrum region, so that the above-described inconvenience is caused by the generation of ozone due to the absorption of oxygen. For example, assuming that the transmittance of ArF excimer laser light in a vacuum or in an inert gas atmosphere such as nitrogen or helium is 100%, the ArF excimer laser in a spontaneous emission state has a spectral width of 90%, a narrower spectrum width, and a smaller oxygen width. The transmittance is reduced to 98% even when an ArF laser in which the absorption band is avoided is used.
【0010】このような透過率の低下は、酸素による光
の吸収およびこれにより発生したオゾンの影響によるも
のと考えられる。オゾンの発生は、透過率を低下させる
ばかりでなく、光学材料表面や他の部品との反応による
装置性能の劣化、および環境汚染を引き起こす。It is considered that such a decrease in transmittance is due to the absorption of light by oxygen and the influence of ozone generated thereby. The generation of ozone not only lowers the transmittance, but also degrades the performance of the device due to the reaction with the optical material surface and other components, and causes environmental pollution.
【0011】このように、ArFエキシマレーザのよう
な光源を有する露光装置では、光路全体を窒素等の不活
性ガスで満たすことは、上記光の透過率の低下やオゾン
発生を回避するために必要な手段の一つであることは良
く知られている。As described above, in an exposure apparatus having a light source such as an ArF excimer laser, it is necessary to fill the entire optical path with an inert gas such as nitrogen in order to avoid the decrease in light transmittance and ozone generation. It is well known that this is one of the means.
【0012】一般に、露光装置は、光源からの光でマス
クを均一に照明するための照明光学系と、マスクに形成
された回路パターンをウエハ上に結像させるための投影
光学系と、ウエハを支持しかつ適宜移動させて位置決め
をするためのステージ手段を有する。In general, an exposure apparatus includes an illumination optical system for uniformly illuminating a mask with light from a light source, a projection optical system for forming a circuit pattern formed on the mask on a wafer, and a projection optical system. It has stage means for supporting and moving and positioning it as appropriate.
【0013】[0013]
【発明が解決しようとする課題】上述のような構成の露
光装置では、不活性ガス等によるパージ制御が必要とな
ってきている。すなわち、248nm近傍の中心波長を
有するKrFエキシマレーザに比べ、193nm近傍に
中心波長を有するArFエキシマレーザはオゾン生成率
が高く、したがって環境汚染を引き起こすばかりでな
く、各種生成物が光学素子に付着し、光学特性の低下を
招くことが知られている。また、気体の成分により光学
的インデックス(屈折率)が異なるため、パージガスの
成分が不安定になると種々の光学収差が発生し、結像特
性に著しい影響を及ぼす。In the exposure apparatus having the above-described structure, it is necessary to perform purge control using an inert gas or the like. That is, compared to a KrF excimer laser having a center wavelength near 248 nm, an ArF excimer laser having a center wavelength near 193 nm has a higher ozone generation rate, thus not only causing environmental pollution but also causing various products to adhere to the optical element. It is known that optical characteristics are degraded. In addition, since the optical index (refractive index) differs depending on the gas component, when the purge gas component becomes unstable, various optical aberrations are generated, which significantly affects the imaging characteristics.
【0014】しかしながら、上記従来技術によれば、光
学系を収納する容器は密閉性の高いものではないため、
露光を開始する毎に不活性ガスを供給し、容器内の酸素
濃度が所定の値に低下するまで露光装置を待機させる
か、あるいは、露光装置が不作動であっても不活性ガス
の供給を続ける必要がある。前者の場合は、露光装置の
待機時間が長くなり、そのためスループットの低下を引
き起こし、後者の場合は、常時不活性ガスを供給するた
めに大量の不活性ガスを消費する。However, according to the above-mentioned prior art, since the container for housing the optical system is not highly sealed,
An inert gas is supplied each time exposure is started, and the exposure apparatus is kept on standby until the oxygen concentration in the container drops to a predetermined value, or the supply of the inert gas is performed even when the exposure apparatus is inactive. We need to continue. In the former case, the standby time of the exposure apparatus becomes longer, thereby causing a decrease in throughput. In the latter case, a large amount of inert gas is consumed to always supply the inert gas.
【0015】この際、光学系を収納する容器に不活性ガ
スを供給する供給ラインは、該供給ラインに設けられた
開閉弁、およびガス流路切換手段、並びに該光学系の光
源の駆動開始および停止にそれぞれ同期して開閉弁を開
閉するとともに開閉弁が開かれた後に所定のプログラム
に基づいて流路切換手段を駆動する制御手段を有する。
あるいは、光源の駆動開始後、センサによって容器内の
酸素をモニタし、酸素濃度が所定の値以下に低下した
後、流路切換手段が作動する。At this time, a supply line for supplying the inert gas to the container accommodating the optical system includes an opening / closing valve provided in the supply line, a gas flow path switching unit, and the start of driving of the light source of the optical system. Control means for opening and closing the on-off valve in synchronization with each stop and for driving the flow path switching means based on a predetermined program after the on-off valve is opened.
Alternatively, after the driving of the light source is started, oxygen in the container is monitored by a sensor, and after the oxygen concentration falls below a predetermined value, the flow path switching means operates.
【0016】これらの制御系の動作中に、何らかの誤動
作が生じた際に、前記容器内へ不活性ガスが過剰に供給
され、容器内の不活性ガス圧力が上昇し、レンズ位置や
姿勢に影響を及ぼし、このことが良好な光学特性を害す
るばかりでなく、上記容器や該光学部品等を破損する危
険性がある。If any malfunction occurs during the operation of these control systems, an excessive amount of inert gas is supplied into the container, and the pressure of the inert gas in the container increases, affecting the position and posture of the lens. This not only impairs good optical characteristics, but also damages the container and the optical components.
【0017】また、半導体素子の製造コストの観点か
ら、一層のスループット向上が求められている。Further, from the viewpoint of the manufacturing cost of a semiconductor device, further improvement in throughput is required.
【0018】本発明では、露光装置の光路上の気体圧力
が所望の値を超えることを抑制し、また、露光装置自体
のスループット向上、光学系収納容器および該容器内に
配置された光学素子等の内部破損率の低下または光学特
性の劣化防止、ひいてはメンテナンスによる装置停止時
間の削減を目的とする。According to the present invention, the gas pressure on the optical path of the exposure apparatus is suppressed from exceeding a desired value, the throughput of the exposure apparatus itself is improved, the optical system storage container, the optical element disposed in the container, and the like. The purpose of the present invention is to reduce the internal damage rate or prevent the optical characteristics from deteriorating, and to reduce the downtime of the apparatus due to maintenance.
【0019】[0019]
【課題を解決するための手段】本発明は上記課題を解決
すべくなされたもので、本発明の第1の露光装置は、光
源と、マスクに描かれたパターンを該光源からの光で照
明する照明光学系と、該照明されたパターンを投影基板
に投影する投影光学系を有し、前記光源から前記投影基
板までの全体または一部を外気との通気に対して概略遮
蔽する容器と、該容器に接続された不活性ガスの供給ラ
インおよび排出ラインと、該容器上若しくは該容器と圧
力的に等価な位置の少なくとも1ヶ所および/または該
供給ライン若しくは該排出ライン上若しくは該供給ライ
ン若しくは該排出ラインと圧力的に等価な位置の少なく
とも1ヶ所に圧力調整手段を具備する露光装置である。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and a first exposure apparatus of the present invention illuminates a light source and a pattern drawn on a mask with light from the light source. An illumination optical system that has a projection optical system that projects the illuminated pattern onto a projection substrate, and a container that approximately shields the whole or a part of the light source from the light source to the projection substrate with respect to ventilation with outside air. A supply line and a discharge line for the inert gas connected to the container, and at least one position on the container or at a pressure equivalent to the container and / or on the supply line or the discharge line or the supply line or An exposure apparatus is provided with a pressure adjusting means at at least one position which is pressure equivalent to the discharge line.
【0020】本発明の第2の露光装置は、第1の露光装
置において、前記圧力調整手段は、前記容器内の前記不
活性ガスが所望の圧力を超え、あらかじめ設定された圧
力になったとき、自動的に該不活性ガスを該容器外に排
出し、該不活性ガスが所望の圧力値に降下すれば該不活
性ガスの排出を終了して、該容器の該不活性ガスの圧力
値を所望の圧力値に保持することを特徴とする。According to a second exposure apparatus of the present invention, in the first exposure apparatus, the pressure adjusting means is provided when the inert gas in the container exceeds a desired pressure and reaches a preset pressure. Automatically discharging the inert gas out of the container, and when the inert gas drops to a desired pressure value, terminating the discharge of the inert gas and ending the pressure value of the inert gas in the container. Is maintained at a desired pressure value.
【0021】本発明の第3の露光装置は、第1の露光装
置において、前記圧力調整手段は、前記供給ライン内の
該不活性ガスが所望の圧力値を超え、あらかじめ設定さ
れた圧力値になったとき、自動的に該不活性ガスを該供
給ライン外に排出し、該不活性ガスが所望の圧力値に降
下すれば該不活性ガスの排出を終了して、該供給ライン
の該不活性ガスの圧力値を所望の圧力値に保持すること
を特徴とする。According to a third exposure apparatus of the present invention, in the first exposure apparatus, the pressure adjusting means is arranged so that the inert gas in the supply line exceeds a desired pressure value and reaches a predetermined pressure value. Automatically discharges the inert gas out of the supply line. When the inert gas drops to a desired pressure value, the discharge of the inert gas is terminated and the inert gas in the supply line is stopped. The pressure value of the active gas is maintained at a desired pressure value.
【0022】本発明の第4の露光装置は、第1の露光装
置において、前記圧力調整手段は、前記排出ライン内の
該不活性ガスが所望の圧力値を超え、あらかじめ設定さ
れた圧力値になったとき、自動的に該不活性ガスを該排
出ラインと異なる経路を通じて排出し、該不活性ガスが
所望の圧力値に降下すれば該不活性ガスの排出を終了し
て、該排出ラインの該不活性ガスの圧力値を所望の圧力
値に保持することを特徴とする。According to a fourth exposure apparatus of the present invention, in the first exposure apparatus, the pressure adjusting means is configured to control the pressure of the inert gas in the discharge line to exceed a desired pressure value and reduce the pressure to a preset pressure value. When it becomes, the inert gas is automatically discharged through a path different from the discharge line, and when the inert gas drops to a desired pressure value, the discharge of the inert gas is terminated and the discharge line is discharged. The pressure value of the inert gas is maintained at a desired pressure value.
【0023】本発明の第5の露光装置は、第1〜4いず
れか一つの露光装置において、前記圧力調整手段は、前
記不活性ガスをその圧力値に応じ、外気に開放する手段
を有することを特徴とする。According to a fifth aspect of the present invention, in the exposure apparatus of any one of the first to fourth aspects, the pressure adjusting means has means for releasing the inert gas to the outside air according to the pressure value. It is characterized by.
【0024】本発明の第6の露光装置は、第2〜4いず
れか一つの露光装置において、前記圧力調整手段は、前
記あらかじめ設定する圧力の値を事前に調整する手段を
有することを特徴とする。A sixth exposure apparatus according to the present invention is the exposure apparatus according to any one of the second to fourth aspects, wherein the pressure adjusting means has means for adjusting the preset pressure value in advance. I do.
【0025】本発明の第7の露光装置は、第5の露光装
置において、前記圧力調整手段は、前記不活性ガスの圧
力値に応じて、前記露光装置本体の動作状態に関係なく
不定期に圧力値を調整する手段を有することを特徴とす
る。この圧力調整手段を用いれば、何らかの原因で排気
システムが不作動になった際に、前記容器内の不活性ガ
スの圧力上昇を自動的に抑制できる。In a seventh exposure apparatus according to the present invention, in the fifth exposure apparatus, the pressure adjusting means may be irregularly irrespective of an operation state of the exposure apparatus main body according to a pressure value of the inert gas. It is characterized by having means for adjusting the pressure value. By using this pressure adjusting means, when the exhaust system becomes inoperable for some reason, the pressure increase of the inert gas in the container can be automatically suppressed.
【0026】本発明の第8の露光装置は、第5〜7いず
れか一つの露光装置において、前記容器は前記照明光学
系を外気との通気に対して概略遮蔽して収納し、該容器
内を不活性ガスでパージするパージ手段を有することを
特徴とする。An eighth exposure apparatus according to the present invention is the exposure apparatus according to any one of the fifth to seventh aspects, wherein the container accommodates the illumination optical system while substantially shielding the illumination optical system from the outside air. A purge means for purging with a inert gas.
【0027】本発明の第9の露光装置は、第5〜7いず
れか一つの露光装置において、前記容器は前記投影光学
系を外気との通気に対して概略遮蔽して収納し、該容器
内を不活性ガスでパージするパージ手段を有することを
特徴とする。A ninth exposure apparatus according to the present invention is the exposure apparatus according to any one of the fifth to seventh exposure apparatuses, wherein the container accommodates the projection optical system while substantially shielding the projection optical system from the outside air. A purge means for purging with a inert gas.
【0028】本発明の第10の露光装置は、第5〜7い
ずれか一つの露光装置において、前記容器は前記光源を
外気との通気に対して概略遮蔽して収納し、該容器内を
不活性ガスでパージするパージ手段を有することを特徴
とする。A tenth exposure apparatus according to the present invention is the exposure apparatus according to any one of the fifth to seventh exposure apparatuses, wherein the container accommodates the light source while substantially shielding the light source from ventilation with the outside air. It has a purging means for purging with an active gas.
【0029】本発明の第11の露光装置は、第5〜7い
ずれか一つの露光装置において、前記マスクを外気との
通気に対して概略遮蔽して収納し、該容器内を不活性ガ
スでパージするパージ手段を有することを特徴とする。
本発明のデバイス製造方法は、第1〜11いずれか一つ
の露光装置を用いることを特徴とする。An eleventh exposure apparatus according to the present invention is the exposure apparatus according to any one of the fifth to seventh exposure apparatuses, wherein the mask is housed in such a manner that the mask is substantially shielded from ventilation with outside air, and the inside of the container is filled with an inert gas. It has a purging means for purging.
The device manufacturing method of the present invention is characterized in that any one of the first to eleventh exposure apparatuses is used.
【0030】[0030]
【発明の実施の形態】本発明の実施形態を図面に基づい
て説明する。図1は、第1の実施形態の露光装置の構成
を模式的に示す図である。図示の装置は、ArFエキシ
マレーザのような短波長レーザ光を射出する光源1を備
えている。光源1が射出した光ビームは、反射鏡2、
3、4を反射し、適当な不図示の照明光学素子を通して
マスク5に均一に照射される。光源1からマスク5に至
る経路においては、照明光学系6は容器7により外気と
の通気を概略遮蔽され、この容器には、不活性ガス供給
源(パージ手段)8からバルブ9、酸素センサ10を介
して、不活性ガスとして窒素ガスが供給されるようにな
っている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram schematically illustrating a configuration of an exposure apparatus according to the first embodiment. The illustrated device includes a light source 1 that emits short-wavelength laser light such as an ArF excimer laser. The light beam emitted from the light source 1 is reflected by the reflecting mirror 2,
The light reflected from the masks 3 and 4 is uniformly irradiated on the mask 5 through an appropriate illumination optical element (not shown). In the path from the light source 1 to the mask 5, the illumination optical system 6 is roughly shielded from the outside air by a container 7. The container includes an inert gas supply source (purge means) 8, a valve 9, an oxygen sensor 10. , A nitrogen gas is supplied as an inert gas.
【0031】マスク5を透過した光は、投影光学系11
を構成する不図示の種々の光学素子を介してウエハステ
ージ12に載置されたウエハ13の表面上に到達し、マ
スクに描画したパターンを結像する。ここで、投影光学
系11も容器14により外気との通気を遮蔽され、この
容器には、不活性ガス供給源8からバルブ15、酸素セ
ンサ16を介して窒素ガスが供給されている。The light transmitted through the mask 5 is transmitted to the projection optical system 11.
Reaches the surface of the wafer 13 placed on the wafer stage 12 via various optical elements (not shown) constituting the above, and forms an image of the pattern drawn on the mask. Here, the projection optical system 11 is also shielded from the outside air by the container 14, and the container is supplied with nitrogen gas from the inert gas supply source 8 via the valve 15 and the oxygen sensor 16.
【0032】また、マスク5は、交換される際外気に開
放されるため、照明光学系6や投影光学系11とは独立
した、外気との通気を遮蔽する容器17内にある。また
は、容器7への窒素ガス供給とともに容器17へも供給
できる構造とすることもでき、その場合、容器17が開
放されるときに、容器7と容器17を空間的に遮蔽する
遮蔽手段を設ける。いずれにせよ、容器17は、不活性
ガス供給源18からバルブ19、酸素センサ20を介し
て不活性ガス、たとえば窒素ガスが供給されるようにな
っている。Further, since the mask 5 is opened to the outside air when it is replaced, the mask 5 is provided in a container 17 which is independent of the illumination optical system 6 and the projection optical system 11 and shields the ventilation from the outside air. Alternatively, it is also possible to adopt a structure in which the container 17 can be supplied together with the supply of the nitrogen gas to the container 7. In this case, when the container 17 is opened, a shielding means for spatially shielding the container 7 and the container 17 is provided. . In any case, the container 17 is supplied with an inert gas, for example, nitrogen gas from an inert gas supply source 18 via a valve 19 and an oxygen sensor 20.
【0033】図1に示すように、本発明に係る圧力調整
機構21を、たとえば照明光学系6へ窒素ガスを供給す
る直前の位置に配置し、照明光学系6を収納した容器7
内の不活性ガスが所望の圧力を超え、あらかじめ設定さ
れた圧力になったとき、圧力調整機構21は自動的に不
活性ガスを容器7外に排出し、そして不活性ガスが所望
の圧力値に降下すれば不活性ガスの排出を終了して、容
器7内の不活性ガスの圧力を所望の値に保持する。As shown in FIG. 1, a pressure adjusting mechanism 21 according to the present invention is disposed, for example, at a position immediately before supplying nitrogen gas to the illumination optical system 6, and a container 7 containing the illumination optical system 6 is provided.
When the inert gas in the gas exceeds the desired pressure and reaches a preset pressure, the pressure adjusting mechanism 21 automatically discharges the inert gas to the outside of the container 7, and the inert gas becomes the desired pressure value. , The discharge of the inert gas is terminated, and the pressure of the inert gas in the container 7 is maintained at a desired value.
【0034】同様に圧力調整手段22、23も、それぞ
れたとえば投影光学系11、マスク空間5へ窒素ガスを
供給する直前に配置し、これらをそれぞれ収納した容器
14、17内の不活性ガスが所望の圧力を超え、あらか
じめ設定された圧力値になったとき、圧力調整手段2
2、23は自動的に不活性ガスを容器外に排出し、そし
て不活性ガスが所望の圧力値に降下すれば不活性ガスの
排出を終了して、容器内の不活性ガスを所望の圧力値に
保持する。Similarly, the pressure adjusting means 22 and 23 are also disposed, for example, immediately before the supply of nitrogen gas to the projection optical system 11 and the mask space 5, respectively, and the inert gas in the containers 14 and 17 containing these, respectively, is desired. When the pressure exceeds a predetermined pressure and reaches a preset pressure value,
2, 23 automatically discharges the inert gas to the outside of the container, and when the inert gas drops to a desired pressure value, terminates the discharge of the inert gas and removes the inert gas in the container to the desired pressure. Keep in value.
【0035】図2は、本発明の別の実施形態の露光装置
の構成を模式的に表した図である。図2のように、本発
明に係る圧力調整機構21を、たとえば照明光学系6の
窒素ガスの排出ラインの上に配置し、容器7内の不活性
ガスが所望の圧力値を超え、あらかじめ設定された圧力
値になったとき、自動的に不活性ガスを排出ラインと異
なるラインより排出し、そして不活性ガスが所望の圧力
値に降下すれば不活性ガスの排出を終了して、容器の不
活性ガスの圧力値を所望の圧力値に保持する。FIG. 2 is a diagram schematically showing the configuration of an exposure apparatus according to another embodiment of the present invention. As shown in FIG. 2, the pressure adjusting mechanism 21 according to the present invention is disposed, for example, on a nitrogen gas discharge line of the illumination optical system 6 so that the inert gas in the container 7 exceeds a desired pressure value and is set in advance. When the pressure value reaches the set pressure value, the inert gas is automatically discharged from a line different from the discharge line, and when the inert gas drops to a desired pressure value, the discharge of the inert gas is terminated, and the container is discharged. The pressure value of the inert gas is maintained at a desired pressure value.
【0036】同様に、圧力調整手段22、23も、それ
ぞれ、たとえば投影光学系11、マスク空間5の窒素ガ
スの排出ライン上に配置し、容器14、17内の不活性
ガスが所望の圧力値を超え、あらかじめ設定された圧力
値になったとき、自動的に不活性ガスを排出ラインと異
なるラインより排出し、そして不活性ガスが所望の圧力
値に降下すれば不活性ガスの排出を終了して、容器内の
不活性ガスを所望の圧力値に保持する。Similarly, the pressure adjusting means 22 and 23 are also disposed on, for example, the projection optical system 11 and the discharge line of the nitrogen gas in the mask space 5 so that the inert gas in the containers 14 and 17 has a desired pressure value. When the pressure reaches a preset pressure value, the inert gas is automatically discharged from a line different from the discharge line, and the discharge of the inert gas is terminated when the inert gas drops to a desired pressure value. Then, the inert gas in the container is maintained at a desired pressure value.
【0037】図3は、本発明に係る投影光学系11の他
の形態を示しており、投影光学系の光学素子を部分的に
外気との通気を概略遮断した例である。光学素子31、
32は容器33に、光学素子34、35、36は容器3
7に配置し、それぞれ外気との通気を概略遮蔽してお
り、さらに本例では、容器33、37の外気との通気を
大容器38によって概略遮蔽している。容器38は、光
学素子31、32、34〜36に光を通すように、窓3
9、40を具備している。また、容器33と37は圧力
的に同等になるように、フレキシブルな配管41、4
2、43によって連結されている。不活性ガスは、矢印
IIIからIVの方向に流れる。FIG. 3 shows another embodiment of the projection optical system 11 according to the present invention, in which the optical elements of the projection optical system are partially cut off from the outside air. Optical element 31,
32 is a container 33, and optical elements 34, 35 and 36 are a container 3
7, the ventilation with the outside air is roughly blocked, and in this example, the ventilation with the outside air of the containers 33, 37 is roughly blocked with the large container 38. The container 38 is provided with a window 3 so as to transmit light to the optical elements 31, 32, 34 to 36.
9 and 40 are provided. The flexible pipes 41 and 4 are used so that the vessels 33 and 37 are pressure equivalent.
2, 43. The inert gas flows in the direction of arrows III to IV.
【0038】本発明に係る圧力調整機構44、45を、
たとえば、容器38、37にそれぞれ配置し、容器3
8、37内の不活性ガスが所望の圧力値を超え、あらか
じめ設定された圧力値になったとき、自動的に不活性ガ
スを排出ラインと異なるラインより排出し、不活性ガス
が所望の圧力値に降下すれば不活性ガスの排出を終了
し、容器内の不活性ガスの圧力値を所望の圧力値に保持
する。これら圧力調整機構44、45はそれぞれ独立に
動作するものとしてもよい。The pressure adjusting mechanisms 44 and 45 according to the present invention
For example, they are arranged in containers 38 and 37, respectively,
When the inert gas in 8, 37 exceeds a desired pressure value and reaches a preset pressure value, the inert gas is automatically discharged from a line different from the discharge line, and the inert gas is discharged at a desired pressure. When the pressure falls to a value, the discharge of the inert gas is terminated, and the pressure value of the inert gas in the container is maintained at a desired pressure value. These pressure adjusting mechanisms 44 and 45 may operate independently.
【0039】また、図3に点線で示すように、本発明に
係る圧力調整機構45に、配管46を経て、直接容器3
8より外に余剰不活性ガスを排出する手段を付加しても
良い。As shown by a dotted line in FIG. 3, the pressure adjusting mechanism 45 according to the present invention is directly connected to the container 3 via a pipe 46.
Means for discharging the surplus inert gas may be added to the outside of FIG.
【0040】上記図3の実施形態では、投影光学系に関
して述べたが、照明光学系、マスク空間の少なくとも一
部またはすべてに上記のような構造を採用することを特
徴とする露光装置としても良い。Although the projection optical system has been described in the embodiment shown in FIG. 3, an exposure apparatus characterized in that the above-described structure is adopted in at least a part or all of the illumination optical system and the mask space may be adopted. .
【0041】図4には、本発明に係る圧力調整機構の幾
つかの形態の概略断面図を示す。(a)中の圧力受け可
動子51は、ばね52により該圧力調整機構内空間に固
定されている。照明光学系を収納する容器7等の内部圧
力が所望の圧力値を超え、あらかじめ設定しておいた圧
力値になったとき、気体Iがこの圧力調整機構に流れ込
むと、その圧力を受け、圧力受け可動子51が上方に移
動し、シール53より離れたときに気体IIが排出され
る。この気体IIが、調整されうる気体量となる。FIG. 4 is a schematic sectional view of some embodiments of the pressure adjusting mechanism according to the present invention. The pressure receiving movable element 51 in (a) is fixed to the space inside the pressure adjusting mechanism by a spring 52. When the gas I flows into this pressure adjusting mechanism when the internal pressure of the container 7 or the like housing the illumination optical system exceeds a desired pressure value and reaches a preset pressure value, the gas I receives the pressure and receives a pressure. When the receiving movable element 51 moves upward and separates from the seal 53, the gas II is discharged. This gas II is a gas amount that can be adjusted.
【0042】圧力受け可動子51を圧力調整機構内空間
に拘束する手段は、図4(a)のばね52の代わりに、
(b)のおもり55や(c)のてこ56を用いてもよ
い。これら可動子拘束手段の強度や重量を変更すること
により、あらかじめ設定すべき圧力値を事前に調整する
ことができる。The means for restraining the pressure receiving movable element 51 in the space inside the pressure adjusting mechanism is different from the spring 52 shown in FIG.
The weight 55 of (b) and the lever 56 of (c) may be used. By changing the strength and weight of these mover restraining means, the pressure value to be set in advance can be adjusted in advance.
【0043】圧力受け可動子51の代わりに、圧力調整
機構は圧力を検出するセンサを備え、その値に応じて排
気弁等により、圧力を調整する機構であってもよい。そ
の場合、図5に示すように、不図示の制御系にて圧力計
57の指示値を読み取り、圧力計からの指示値に応じ
て、あらかじめ設定した圧力を超えた場合、排気弁58
に司令を出し、不活性気体を排出し、所望の圧力値を保
持する。Instead of the pressure receiving movable element 51, the pressure adjusting mechanism may include a sensor for detecting the pressure, and may adjust the pressure by an exhaust valve or the like according to the value. In this case, as shown in FIG. 5, the reading of the pressure gauge 57 is read by a control system (not shown), and when the pressure exceeds a preset pressure in accordance with the reading from the pressure gauge, the exhaust valve 58 is opened.
To release the inert gas and maintain the desired pressure value.
【0044】このように、本発明に係る圧力調整機構内
の気体の流れは、たとえば、図3におけるI→IIの一
方向に限定することを特徴とする。これにより、前記容
器内への外気からの通気を阻止する。As described above, the flow of the gas in the pressure adjusting mechanism according to the present invention is, for example, limited to one direction of I → II in FIG. This prevents ventilation from outside air into the container.
【0045】上記実施形態では、不活性ガスとして窒素
を例にとり説明したが、露光波長領域に酸素の吸収スペ
クトルを持たない不活性ガス、たとえばへリウム等のガ
スを使用しても良い。In the above embodiment, nitrogen has been described as an example of the inert gas. However, an inert gas having no absorption spectrum of oxygen in the exposure wavelength region, for example, a gas such as helium may be used.
【0046】さらに、上記実施形態では、ArFエキシ
マレーザを使用した200nm以下の波長域の光を露光
光とする露光装置を例にとり説明したが、本発明の範囲
を逸脱することなく、露光中に酸素雰囲気を嫌うタイプ
のマスクに対しても、露光波長に関わらず本発明を有効
に適用できることは明らかである。Further, in the above embodiment, the exposure apparatus using the ArF excimer laser and exposing the light in the wavelength range of 200 nm or less to the exposure light has been described as an example. It is apparent that the present invention can be effectively applied to a mask that does not like an oxygen atmosphere regardless of the exposure wavelength.
【0047】次に上記説明した露光装置を利用したデバ
イス製造方法の実施形態を説明する。図6は微小デバイ
ス(ICやLSI等の半導体チップ、液晶パネル、CC
D、薄膜磁気ヘッド、マイクロマシン等)の製造のフロ
ーを示す。ステップ1(回路設計)ではデバイスのパタ
ーン設計を行なう。ステップ2(マスク製作)では設計
したパターンを形成したマスクを製作する。一方、ステ
ップ3(ウエハ製造)ではシリコンやガラス等の材料を
用いてウエハを製造する。ステップ4(ウエハプロセ
ス)は前工程と呼ばれ、上記用意したマスクとウエハを
用いて、リソグラフィ技術によってウエハ上に実際の回
路を形成する。次のステップ5(組立て)は後工程と呼
ばれ、ステップ4によって作製されたウエハを用いて半
導体チップ化する工程であり、アッセンブリ工程(ダイ
シング、ボンディング)、パッケージング工程(チップ
封入)等の工程を含む。ステップ6(検査)ではステッ
プ5で作製された半導体デバイスの動作確認テスト、耐
久性テスト等の検査を行なう。こうした工程を経て、半
導体デバイスが完成し、これが出荷(ステップ7)され
る。Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described. FIG. 6 shows a micro device (a semiconductor chip such as an IC or an LSI, a liquid crystal panel, a CC)
D, thin-film magnetic head, micromachine, etc.). In step 1 (circuit design), a device pattern is designed. Step 2 is a process for making a mask on the basis of the designed pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon or glass. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).
【0048】図7は上記ウエハプロセス(ステップ4)
の詳細なフローを示す。ステップ11(酸化)ではウエ
ハの表面を酸化させる。ステップ12(CVD)ではウ
エハ表面に絶縁膜を形成する。ステップ13(電極形
成)ではウエハ上に電極を蒸着によって形成する。ステ
ップ14(イオン打込み)ではウエハにイオンを打ち込
む。ステップ15(レジスト処理)ではウエハにレジス
トを塗布する。ステップ16(露光)では上記説明した
本発明の露光装置によってマスクの回路パターンをウエ
ハの複数のショット領域に並べて焼付露光する。ステッ
プ17(現像)では露光したウエハを現像する。ステッ
プ18(エッチング)では現像したレジスト像以外の部
分を削り取る。ステップ19(レジスト剥離)ではエッ
チングが済んで不要となったレジストを取り除く。これ
らのステップを繰り返し行なうことによって、ウエハ上
に多重に回路パターンが形成される。本発明の生産方法
を用いれば、従来は製造が難しかった大型のデバイスを
低コストに製造することができる。FIG. 7 shows the wafer process (step 4).
The detailed flow of is shown. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist processing), a resist is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus of the present invention to print the circuit pattern of the mask on a plurality of shot areas of the wafer by printing. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the production method of the present invention, it is possible to produce a large-sized device, which was conventionally difficult to produce, at low cost.
【0049】[0049]
【発明の効果】本発明の露光装置は、光路上の気体の圧
力が所望の値を超えることを抑制し、また、露光装置自
体のスループット向上、そして光学系収納容器および該
容器内に配置された光学素子等の内部破損率の低下や光
学特性の劣化防止、ひいてはメンテナンスによる装置停
止時間を削減することができる。The exposure apparatus of the present invention suppresses the gas pressure on the optical path from exceeding a desired value, improves the throughput of the exposure apparatus itself, and provides an optical system storage container and the optical system storage container. In addition, it is possible to prevent a reduction in the internal breakage rate of the optical element and the like and deterioration of the optical characteristics, and to reduce the downtime of the apparatus due to maintenance.
【図1】 本発明の一実施形態に係る露光装置の模式図
である。FIG. 1 is a schematic view of an exposure apparatus according to an embodiment of the present invention.
【図2】 本発明の別の実施形態に係る露光装置の模式
図である。FIG. 2 is a schematic view of an exposure apparatus according to another embodiment of the present invention.
【図3】 投影光学系の光学素子を部分的に外気との通
気から遮断した概略断面図である。FIG. 3 is a schematic cross-sectional view in which an optical element of a projection optical system is partially cut off from ventilation with outside air.
【図4】 圧力調整機構の幾つかの形態の概略断面図で
ある。FIG. 4 is a schematic cross-sectional view of some embodiments of a pressure adjusting mechanism.
【図5】 本発明の更に別の実施形態に係る露光装置の
模式図である。FIG. 5 is a schematic view of an exposure apparatus according to still another embodiment of the present invention.
【図6】 微小デバイスの製造フローである。FIG. 6 is a manufacturing flow of a micro device.
【図7】 ウエハプロセス(ステップ4)の詳細なフロ
ーである。FIG. 7 is a detailed flow of a wafer process (Step 4).
1:光源、2,3,4:ミラー、5:マスク(レチク
ル)、6:照明光学系、11:投影光学系、12:ウエ
ハステージ、13:ウエハ(感光基板)、7:光源1か
ら照明光学系6を略密閉する容器、14:投影光学系1
1を略密閉する容器、17:マスク空間を略密閉する容
器、21:圧力調整機構(光源〜照明光学系)、22:
圧力調整機構(投影光学系)、23:圧力調整機構(マ
スク空間)、10:酸素センサ(光源〜照明光学系)、
16:酸素センサ(投影光学系)、20:酸素センサ
(マスク空間)、8:不活性ガス供給源(光源〜照明光
学系、投影光学系)、18:不活性ガス供給源(マスク
空間)、V:排気ユニット、31,32,34,35,
36:投影光学系を構成する光学素子、33:投影光学
系の光学素子31,32を外気との通気を概略遮蔽する
容器、37:投影光学系の光学素子34,35,36を
外気との通気を概略遮蔽する容器、38:投影光学系の
一部を外気との通気を概略遮蔽する容器、39,40:
窓、41,42,43,46:容器38、33、37に
不活性ガスを供給する配管、44:容器38に配置した
圧力調整機構、45:容器37に配置した圧力調整機
構、III:不活性ガス供給方向、IV:不活性ガス排
気方向、I:圧力調整機構に供給される露光装置からの
排出ガスの流れ方向、II:圧力調整機構から排出され
る排出ガスの流れ方向、51:圧力受け可動子、52:
ばね、53,54:シール、55:おもり、56:て
こ、57:圧力計、58:排気弁。1: light source, 2, 3, 4: mirror, 5: mask (reticle), 6: illumination optical system, 11: projection optical system, 12: wafer stage, 13: wafer (photosensitive substrate), 7: illumination from light source 1 A container for substantially closing the optical system 6, 14: Projection optical system 1
1, a container for substantially sealing the mask space, 21: a pressure adjusting mechanism (light source to illumination optical system), 22:
Pressure adjusting mechanism (projection optical system), 23: pressure adjusting mechanism (mask space), 10: oxygen sensor (light source to illumination optical system),
16: oxygen sensor (projection optical system), 20: oxygen sensor (mask space), 8: inert gas supply source (light source to illumination optical system, projection optical system), 18: inert gas supply source (mask space), V: exhaust unit, 31, 32, 34, 35,
36: an optical element constituting the projection optical system; 33: a container for substantially blocking the ventilation of the projection optical system from the outside with the optical elements 31 and 32; and 37: a container for the optical elements 34, 35 and 36 of the projection optical system with the outside air. Vessel that roughly blocks ventilation, 38: Vessel that roughly blocks part of the projection optical system from ventilating outside air, 39, 40:
Windows, 41, 42, 43, 46: piping for supplying an inert gas to the containers 38, 33, 37; 44: a pressure adjusting mechanism arranged in the container 38; 45: a pressure adjusting mechanism arranged in the container 37; Active gas supply direction, IV: inert gas exhaust direction, I: flow direction of exhaust gas supplied to the pressure adjusting mechanism from the exposure apparatus, II: flow direction of exhaust gas discharged from the pressure adjusting mechanism, 51: pressure Receiving mover, 52:
Spring, 53, 54: seal, 55: weight, 56: lever, 57: pressure gauge, 58: exhaust valve.
Claims (12)
光源からの光で照明する照明光学系と、該照明されたパ
ターンを投影基板に投影する投影光学系を有する露光装
置において、前記光源から前記投影基板までの全体また
は一部を外気との通気に対して概略遮蔽する容器と、該
容器に接続された不活性ガスの供給ラインおよび排出ラ
インと、該容器上若しくは該容器と圧力的に等価な位置
の少なくとも1ヶ所および/または該供給ライン若しく
は該排出ライン上若しくは該供給ライン若しくは該排出
ラインと圧力的に等価な位置の少なくとも1ヶ所に圧力
調整手段を具備する露光装置。1. An exposure apparatus comprising: a light source; an illumination optical system for illuminating a pattern drawn on a mask with light from the light source; and a projection optical system for projecting the illuminated pattern onto a projection substrate. A container for substantially shielding the whole or a part of the container from the projection substrate to the outside air, a supply line and a discharge line for an inert gas connected to the container, and a pressure line on or above the container. An exposure apparatus comprising a pressure adjusting means at at least one position equivalent to the above and / or at least one position on the supply line or the discharge line or at a pressure equivalent to the supply line or the discharge line.
不活性ガスが所望の圧力を超え、あらかじめ設定された
圧力になったとき、自動的に該不活性ガスを該容器外に
排出し、該不活性ガスが所望の圧力値に降下すれば該不
活性ガスの排出を終了して、該容器の該不活性ガスを所
望の圧力値に保持することを特徴とする請求項1に記載
の露光装置。2. The pressure adjusting means automatically discharges the inert gas out of the container when the inert gas in the container exceeds a desired pressure and reaches a preset pressure. 2. The method according to claim 1, wherein the discharge of the inert gas is terminated when the inert gas drops to a desired pressure value, and the inert gas in the container is maintained at a desired pressure value. Exposure equipment.
の該不活性ガスが所望の圧力を超え、あらかじめ設定さ
れた圧力になったとき、自動的に該不活性ガスを該供給
ライン外に排出し、該不活性ガスが所望の圧力値に降下
すれば該不活性ガスの排出を終了して、該供給ラインの
該不活性ガスを所望の圧力値に保持することを特徴とす
る請求項1に記載の露光装置。3. The pressure adjusting means automatically moves the inert gas out of the supply line when the inert gas in the supply line exceeds a desired pressure and reaches a preset pressure. Discharging the inert gas when the inert gas drops to a desired pressure value, terminating the discharging of the inert gas, and maintaining the inert gas in the supply line at a desired pressure value. 2. The exposure apparatus according to 1.
の該不活性ガスが所望の圧力を超え、あらかじめ設定さ
れた圧力になったとき、自動的に該不活性ガスを該排出
ラインと異なる経路を通じて排出し、該不活性ガスが所
望の圧力値に降下すれば該不活性ガスの排出を終了し
て、該排出ラインの該不活性ガスを所望の圧力値に保持
することを特徴とする請求項1に記載の露光装置。4. The pressure adjusting means automatically changes the inert gas from the discharge line when the inert gas in the discharge line exceeds a desired pressure and reaches a preset pressure. Discharging through a passage, and when the inert gas drops to a desired pressure value, ending the discharge of the inert gas and maintaining the inert gas in the discharge line at a desired pressure value. The exposure apparatus according to claim 1.
その圧力値に応じ外気に開放する手段を有することを特
徴とする請求項2〜4いずれか一項に記載の露光装置。5. An exposure apparatus according to claim 2, wherein said pressure adjusting means has means for releasing said inert gas to the outside air in accordance with a pressure value thereof.
定する圧力の値を事前に調整する手段を有することを特
徴とする請求項2〜4いずれか一項に記載の露光装置。6. The exposure apparatus according to claim 2, wherein the pressure adjusting unit has a unit that adjusts the value of the preset pressure in advance.
圧力値に応じて、前記露光装置本体の動作状態に関係な
く不定期に圧力を調整する手段を有することを特徴とす
る請求項5に記載の露光装置。7. The apparatus according to claim 5, wherein the pressure adjusting means includes means for adjusting the pressure irregularly according to the pressure value of the inert gas, irrespective of the operation state of the exposure apparatus main body. 3. The exposure apparatus according to claim 1.
気に対して概略遮蔽して収納し、該容器内を不活性ガス
でパージするパージ手段を有することを特徴とする請求
項5〜7いずれか一項に記載の露光装置。8. The container according to claim 5, further comprising a purging means for accommodating the illumination optical system while substantially shielding the illumination optical system from the outside air and purging the interior of the container with an inert gas. 8. The exposure apparatus according to claim 7.
気に対して概略遮蔽して収納し、該容器内を不活性ガス
でパージするパージ手段を有することを特徴とする請求
項5〜7いずれか一項に記載の露光装置。9. The container according to claim 5, further comprising a purging means for accommodating the projection optical system while substantially shielding the projection optical system from outside air and purging the interior of the container with an inert gas. 8. The exposure apparatus according to claim 7.
対して概略遮蔽して収納し、該容器内を不活性ガスでパ
ージするパージ手段を有することを特徴とする請求項5
〜7いずれか一項に記載の露光装置。10. The container according to claim 5, further comprising a purging means for accommodating the light source while substantially shielding the light source from the outside air and purging the interior of the container with an inert gas.
An exposure apparatus according to any one of claims 1 to 7.
略遮蔽して収納し、該容器内を不活性ガスでパージする
パージ手段を有することを特徴とする請求項5〜7いず
れか一項に記載の露光装置。11. The mask according to claim 5, further comprising a purging means for accommodating the mask so as to be substantially shielded from ventilation with outside air and purging the inside of the container with an inert gas. 3. The exposure apparatus according to claim 1.
露光装置を用いることを特徴とするデバイス製造方法。12. A device manufacturing method using the exposure apparatus according to claim 1. Description:
Priority Applications (1)
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JP35428799A JP4738561B2 (en) | 1999-12-14 | 1999-12-14 | Exposure apparatus and device manufacturing method |
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JP35428799A JP4738561B2 (en) | 1999-12-14 | 1999-12-14 | Exposure apparatus and device manufacturing method |
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JP2001167997A true JP2001167997A (en) | 2001-06-22 |
JP2001167997A5 JP2001167997A5 (en) | 2007-02-01 |
JP4738561B2 JP4738561B2 (en) | 2011-08-03 |
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JP2001284214A (en) * | 2000-03-30 | 2001-10-12 | Canon Inc | Exposure system, method of manufacturing device, maintenance method for semiconductor manufacturing plant and exposure system |
JP2005136423A (en) * | 2003-10-30 | 2005-05-26 | Asml Netherlands Bv | Lithographic apparatus and method of manufacturing device |
JP2012004598A (en) * | 2004-07-22 | 2012-01-05 | Asml Netherlands Bv | Method for operating detector within gas conditioned environment |
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