JP2000133583A - Aligner and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To satisfactorily maintain optical performance by preventing gas components on the optical path of an exposure optical system from becoming defective. SOLUTION: This aligner is provided with illuminating optical systems 3-12 for illuminating patterns drawn on an original plate 13 with illuminating lights from a light source 1, and a projecting optical system 14 for projecting the patterns on a substrate 15 to be exposed. The aligner is provided with component detecting means 36, 39, and 41 for detecting prescribed gas components for all or prescribed partial optical paths from the light source to the substrate to be exposed, or the prescribed gas components in the periphery of the optical path, and a control means 10 for stopping the exposing operation, when the detected values obtained by the component detecting means exceed a prescribed value.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus which prints a circuit pattern on an original plate such as a reticle (also referred to as a mask) by shrinking and projecting it onto a substrate in the process of manufacturing a semiconductor such as an IC or an LSI. The present invention relates to a device manufacturing method used.

[0002]

2. Description of the Related Art Conventionally, in a manufacturing process of a semiconductor element formed from an extremely fine pattern such as an LSI or a super LSI, a reduced projection exposure apparatus has been used. In such a reduced projection exposure apparatus, further miniaturization of a pattern is required in accordance with an increase in the mounting density of semiconductor elements, and the development of a resist process has been responded to the miniaturization of the exposure apparatus.

As means for improving the resolving power of the exposure apparatus, there are a method of changing the exposure wavelength to a shorter wavelength and a method of increasing the numerical aperture (NA) of the projection optical system.
Generally, it is known that the resolution is proportional to the exposure wavelength and inversely proportional to the NA. Efforts have also been made to improve the resolving power while ensuring the depth of focus of the projection optical system. In general, the depth of focus is proportional to the exposure wavelength,
Therefore, improvement in resolving power and securing of the depth of focus are contradictory subjects. As a method for solving such a problem, a phase shift reticle method or FLEX
(Focus Latitude Enhanceme
nt Exposure) method and the like have been proposed.

With respect to the exposure wavelength, a KrF excimer laser having an oscillation wavelength of about 248 nm from the i-line of 365 nm has become mainstream at present, and an ArF excimer laser having an oscillation wavelength of about 193 nm has recently been used. ing.

[0005] Further, from the viewpoint of the manufacturing cost of the semiconductor element, the throughput of the exposure apparatus has been further improved. For example, by increasing the output power of the exposure light source,
A method of reducing the exposure time per shot or a method of increasing the number of elements per shot by enlarging the exposure area can be used.

Further, in recent years, in order to cope with an increase in the chip size of a semiconductor element, a so-called step-and-repeat type stepper, which sequentially moves a mask pattern while printing, scans and exposes a mask and a wafer in synchronization with each other. There is a shift to a step-and-scan exposure apparatus that moves sequentially to the next shot. This step-and-scan type exposure apparatus has a feature that the exposure area can be increased without increasing the size of the projection optical system because the exposure field is slit-shaped.

As described above, when ultraviolet light is used as an exposure light source, ammonium sulfate ((NH ₄ ) ₂ SO ₄ ) or silicon dioxide (SiO ₂ ) is formed on the surface of an optical element disposed in the optical path as a result of long-term use of the apparatus. ₂ ), etc., and a phenomenon occurs in which optical characteristics are significantly reduced. This is generated by a chemical reaction caused by irradiation of ultraviolet rays with ammonia (NH ₃ ) / sulfurous acid (SO ₂ ) / Si compound contained in the surrounding environment. Conventionally, in order to prevent such deterioration of the optical element, the entire optical path is purged with an inert gas such as clean dry air or nitrogen.

Further, it is known that in an ArF excimer laser having a wavelength near 193 nm, in particular, a plurality of absorption bands of oxygen (O ₂ ) exist in a band near the above wavelength. Oxygen (O ₃ ) is generated when oxygen absorbs the light, and the ozone further increases the absorption of light and significantly lowers the transmittance. The product adheres to the optical element surface and reduces the efficiency of the optical system.

Therefore, in the optical path of the exposure optical system of the projection exposure apparatus using a far ultraviolet light source such as an ArF excimer laser as a light source, the concentration of oxygen existing in the optical path is reduced to a low level by a purge means using an inert gas such as nitrogen. The way to hold down is taken.

The inert gas purge of the illumination optical system in the above-described conventional projection exposure apparatus will be described with reference to FIG. In the figure, 601 is an excimer laser, 602 is a container of an illumination optical system, 603 is a reticle, 604 to 606 are mirrors, 607 is a beam shaping optical system, 608 is an optical integrator, and 609 to 611 are condenser lenses. A laser beam emitted from the excimer laser 601 is shaped into a predetermined beam shape by a beam shaping optical system 607, and then enters an optical integrator 608. Form. The light beam from the secondary light source uniformly illuminates the reticle 603 by the condenser lenses 609 to 611. That is, it is a Koehler illumination optical system.

In order to provide an inert gas atmosphere around each optical element and on the optical path, for example, nitrogen gas or the like is supplied into the container 602 through an air supply port 602a from an inert gas supply means (not shown). Is done. The supplied inert gas sequentially passes through the above-described illumination optical system, and is replaced so that there is no residual gas such as the atmosphere, and then is discharged from a discharge port 602b to a discharge unit (not shown).

For the purpose of improving the apparatus throughput by minimizing the replacement time by the inert gas as much as possible, or to minimize the consumption of the inert gas after the replacement to reduce the running cost, for example, Japanese Patent Laid-Open No. -21600
The applicant has proposed a method for controlling the supply gas amount as disclosed in Japanese Patent Publication No. 0-205.

[0013]

However, as described above, as the wavelength of the light source becomes shorter, it becomes necessary to perform a more precise purge control for purging with an inert gas or the like. That is, compared to a KrF excimer laser having an oscillation wavelength near 248 nm,
It is known that an ArF excimer laser having an oscillation wavelength near m has a high ozone generation rate, and thus various products are more likely to adhere to an optical element. In particular, in a projection optical system, since the optical index (refractive index) differs depending on the gas component on the optical path, if the component of the purge gas is unstable, various optical aberrations will occur, and the imaging performance will be significantly adversely affected. There is a problem that it will affect.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and prevents a gas component on an optical path of an exposure optical system from becoming defective to maintain good optical performance, thereby manufacturing a defective device. The purpose is to prevent it before it happens.

[0015]

According to the present invention, there is provided an illumination optical system for illuminating a pattern drawn on an original plate with illumination light from a light source, and a projection for projecting the pattern onto a substrate to be exposed. An exposure system including an optical system, wherein: component detection means for detecting a predetermined gas component on or around the optical path of all or a predetermined location from the light source to the substrate to be exposed; and Control means for stopping the exposure operation when the detected value exceeds a predetermined value.

Further, the device manufacturing method of the present invention uses such an exposure apparatus, and detects a predetermined gas component on or around the optical path of all or a predetermined portion from the exposure light source to the substrate to be exposed. The device is manufactured by performing exposure when the detected value is equal to or less than a predetermined value.

According to this, the gas on the optical path of the exposure optical system is always well maintained during the exposure operation. Therefore, the optical performance of the exposure optical system is stable, and highly accurate device manufacturing is performed.

[0018]

In a preferred embodiment of the present invention, the control means stops the exposure operation, and unless a command to restart the exposure operation is provided, furthermore, the control means detects the value detected by the component detection means. The exposure operation is not started unless is smaller than the predetermined value. Alternatively, when the value detected by the component detecting means becomes equal to or less than the predetermined value, the exposure operation is started.

Alternatively, as a control by the control means after the control means stops the exposure operation, a command to restart the exposure operation is received, and a detection value equal to or less than the predetermined value is obtained by the component detection means. Control is performed so that the exposure operation is started when the detection is performed, or the detection by the component detecting means is repeated until a detection value equal to or less than the predetermined value is obtained. A selection unit is provided for selecting and setting either to start the operation or to control the exposure operation so that it cannot be restarted, and the control unit performs control according to the setting.

As the component detecting means, an oxygen concentration measuring means or an ozone concentration detecting means is used. In addition, the apparatus includes a container for housing the illumination optical system or the projection optical system while blocking the ventilation from the outside air, and a purging unit for purging the inside of the container with an inert gas. Further, there is provided a means for supplying an inert gas such that a value detected by the component detection means becomes equal to or less than the predetermined value under the control of the control means after the exposure operation is stopped.

The control means issues a predetermined warning when the exposure operation is stopped, and makes a detection by the component detection means at least before exposure for each exposure substrate or for each exposure area of the exposure substrate. Performed before exposure.

[0022]

FIG. 1 shows a schematic configuration of a step-and-scan type projection exposure apparatus according to a first embodiment of the present invention. In the figure, reference numeral 1 denotes an ArF excimer laser having an oscillation wavelength near 193 nm and performing pulsed light emission. In the illumination optical system of this exposure apparatus, a beam emitted from an excimer laser 1 is bent by a mirror 2, shaped into a predetermined beam shape via a beam shaping optical system 3, and then an optical integrator via a mirror 4. 5 is incident. Optical integrator 5
A secondary light source is formed near the emission surface 6. The light beam from the secondary light source is collected by the first condenser lens 7. A blind 9 for regulating an illumination range is disposed near a plane including the light converging point 8 and orthogonal to the optical axis. The light beam from the first condenser lens 7 is transmitted to the second condenser lens 10 and the mirror 1
The pattern surface of the mask 13 is uniformly illuminated by the first and third condenser lenses 12. The optical path from the exit of the excimer laser 1 to the third condenser lens 12 and each optical element are housed in an illumination system container 101 that blocks ventilation from outside air.

As shown in FIG. 2, the illumination optical system performs slit illumination of a part of the pattern 16 of the mask 13 with a slit light beam 17. A part of the illuminated pattern 16 is reduced and projected on the wafer 15 by the projection optical system 14. At this time, the mask 13 and the wafer 1
5 scans the projection optical system 14 and the slit light beam 17 in the opposite directions as shown by arrows 45 and 46 at the same speed ratio as the reduction ratio of the projection optical system 14, while scanning the ArF excimer laser. By repeating the multi-pulse exposure with the pulse light from
The pattern 16 on the entire surface is transferred to one chip region or a plurality of chip regions on the wafer 15.

Reference numeral 21 denotes a mask stage which holds the mask 13 and is driven to scan in the direction of arrow 45 by a drive system (not shown). 22, a bar mirror fixed to the mask stage 21; 23, a laser interferometer for detecting the speed of the mask stage 21 using the bar mirror 22;
Denotes a wafer chuck holding the wafer 15. 2
Reference numeral 5 denotes a wafer stage which holds the wafer chuck 24, which is scanned and driven in a direction indicated by an arrow 46 by a drive system (not shown). 26 is a bar mirror fixed to the wafer stage 25, and 27 is a laser interferometer that detects the speed of the wafer stage 25 using the bar mirror 26.

Reference numeral 102 denotes a mask chamber, which is provided with an openable and closable means 31 at an exchange opening of the mask 13, and switches between an open state and a sealed state by a drive system (not shown). Reference numeral 32 denotes an inert gas supply unit that supplies an inert gas to the illumination system container 101 by a supply system 33, a mask chamber 102 by a supply system 34, and a projection optical system 14 by a supply system 35. The gas inside the illumination system container 101 is an oxygen concentration meter 3
The gas is exhausted to the exhaust means 38 by the exhaust system 37 through 6,
The gas inside the mask chamber 102 is exhausted to the exhaust means 38 by the exhaust system 40 via the oxygen concentration meter 39, and the gas inside the projection optical system 14 is exhausted via the oxygen concentration meter 41 to the exhaust system 4.
The gas is exhausted by the exhaust means 38 to the exhaust means 38. 103 is a control unit,
Reference numeral 104 denotes a display, which will be described later in detail.

FIG. 3 is a flowchart showing an exposure sequence in this embodiment. An example is shown in which an oxygen concentration value is detected and the exposure operation cannot be restarted unless the oxygen concentration value falls within a specified value. Hereinafter, the operation of this embodiment will be described in detail with reference to FIGS. When the exposure sequence is started, before the wafer 15 is loaded into the wafer chuck 24, in step S301, the control unit 103
The oxygen concentration values of the oxygen concentration meter 36 arranged in the illumination system container 101, the oxygen concentration meter 39 arranged in the mask chamber 102, and the oxygen concentration meter 41 arranged in the projection exposure system are detected, and the oxygen concentration in the exposure optical system is detected. Measure the level. Next, in step S302, these oxygen concentration detection values are compared with a specified oxygen concentration value stored in advance in the control unit 103, and if the detected value is within the specified value, the inert gas purge state is changed. It is determined that it is sufficient, and the process proceeds to step S305. If the detected value exceeds the specified value, step S30
In step S3, an error is displayed on the display 104 to warn the user. In step S304, the control unit 103 stops the exposure sequence and waits for a restart. Here, even if the exposure sequence is restarted, the oxygen concentration level in the exposure optical system is measured again in steps S301 and S302, and if the oxygen concentration level exceeds the specified value, the process waits again in step S304, and the exposure operation is started. Is controlled so that it cannot be restarted.

Next, the wafer 15 is loaded into the wafer chuck 24 in step S305. Thereafter, step S306
Then, exposure control of the step & scan method for projecting and exposing the pattern of the mask 13 onto the wafer 15 is performed. When the exposure processing for one wafer is completed, the wafer 15 is unloaded in step S307, and when the exposure processing for the final wafer is confirmed in step S308, the exposure sequence ends. If it is not the last wafer, the process returns to step S301 to measure the oxygen concentration level in the exposure optical system. Step S302
Then, the detected oxygen concentration value is compared with the specified oxygen concentration value. If the detected value is within the specified value, the flow advances to step S305 to carry in a wafer to be subjected to the next exposure. If the detected value exceeds the specified value, it is determined that the purge state of the inert gas is insufficient, the process proceeds to step S303, an error is displayed on the display device 104 to warn, and the control unit 10 in step S304.
3 stops the exposure sequence, outputs a laser oscillation prohibition command to the excimer laser 1, and waits for a restart. Here, even if the exposure sequence is restarted and the exposure sequence is restarted, the oxygen concentration level in the exposure optical system is measured again in steps S301 and S302, and if the oxygen concentration level exceeds the specified value, the process waits again in step S304. , So that the exposure operation cannot be restarted.

In the above-described exposure sequence, the oxygen concentration value in the exposure optical system is measured for each wafer, and the exposure operation is controlled so as to be stopped and cannot be restarted. Measure oxygen concentration value for each wafer
The same effect can be expected even if the exposure operation is stopped.

(Second Embodiment) FIG. 4 is a flowchart showing an exposure sequence according to a second embodiment of the present invention. In this example, after the exposure operation is stopped, automatic exposure is started when the oxygen concentration detection value becomes equal to or less than a specified value. Hereinafter, the operation of this embodiment will be described in detail with reference to FIGS.

In the apparatus configuration similar to that of the first embodiment, when the exposure sequence is started and before the wafer 15 is loaded into the wafer chuck 24, the control unit 103 controls the oxygen concentration meter placed in the illumination system container 101 in step S401. 36, the oxygen concentration values of the oxygen concentration meter 39 arranged in the mask chamber 102 and the oxygen concentration meter 41 arranged in the projection optical system 14 are detected, and the oxygen concentration level in the exposure optical system is measured. Next, in step S402, these oxygen concentration detection values are compared with a specified oxygen concentration value stored in the control unit 103 in advance, and if the detected values are within the specified values, the inert gas purge state is changed. It is determined that it is sufficient, and the process proceeds to step S403. If the detected value exceeds the specified value, the process returns to step S401 to continue monitoring the state until the oxygen concentration level in the exposure optical system becomes equal to or less than the specified value. The exposure operation is automatically started.

In step S403, the wafer 15 is loaded into the wafer chuck 24. Next, in step S404, step-and-scan exposure control for projecting and exposing the pattern of the mask 13 onto the wafer 15 is performed. When the exposure processing for one wafer is completed, the wafer 15 is unloaded in step S405, and when the exposure processing for the final wafer is confirmed in the next step S406, the exposure sequence ends. If it is not the last wafer, the process proceeds to step S407,
As in step S401, the oxygen concentration level in the exposure optical system is measured. Next, in step S408, the detected oxygen concentration value is compared with the specified oxygen concentration value, and if the detected value is within the specified value, the process proceeds to step S403 for loading the next wafer to be exposed. If the detected value exceeds the specified value, it is determined that the purge state of the inert gas is insufficient, and step S4 is performed.
Returning to step 07, the control unit 103 outputs a laser oscillation prohibition command to the excimer laser 1, and continues to monitor the state until the oxygen concentration level in the exposure optical system becomes equal to or less than a specified value, and reaches a specified value or less. At this point, the exposure operation is automatically started.

In the above-described exposure sequence, the oxygen concentration in the exposure optical system is measured for each wafer, the exposure operation is stopped, and the exposure operation is controlled to start automatically. The same effect can be expected even if the oxygen concentration value is measured every several wafers and the exposure operation is stopped and restarted.

(Third Embodiment) FIG. 5 is a flowchart showing an exposure sequence according to a third embodiment of the present invention. In this example, after the exposure operation is stopped, the inert gas supply means is controlled so that the oxygen concentration level falls within a specified value, and automatic exposure is started. Hereinafter, the operation of this embodiment will be described in detail with reference to FIGS.

When the exposure sequence is started, first,
In step S501, in order to minimize the consumption of the inert gas supplied to the exposure optical system, the control unit 10
From 3, an open command is output to an electromagnetic on-off valve (not shown) for causing the inert gas to flow into the inert gas supply means 32 at a small flow rate. Next, before loading the wafer 15 into the wafer chuck 24, in step S502, the control unit 103
The oximeter 36 arranged in the illumination system container 101, the oximeter 39 arranged in the mask chamber 102, and the projection optical system 1
The oxygen concentration value of each of the oxygen concentration meters 41 arranged at 4 is detected, and the oxygen concentration level in the exposure optical system is measured. next,
In step S503, these oxygen concentration detected values are compared with a specified oxygen concentration value stored in the control unit 103 in advance, and if the detected values are within the specified values, the purge state of the inert gas is sufficient. It is determined that there is, and step S5
Go to 05. If the detected value exceeds the specified value, in step S504, the control unit 103 outputs to the inert gas control unit 32 an open command to an electromagnetic on-off valve (not shown) for flowing an inert gas at a large flow rate. , Increase the inert gas purge rate. After that, the process returns to step S502 again.
The monitoring of the state is continued until the oxygen concentration level in the exposure optical system becomes equal to or less than a specified value, and when the oxygen concentration level reaches the specified value or less, the exposure operation is automatically started. After resuming the exposure operation, step S5
At 05, the control unit 103 returns the flow rate of the inert gas supplied to the exposure optical system to a small flow rate.

Next, in step S506, the wafer 15 is loaded into the wafer chuck 24. Thereafter, in step S507, the pattern of the mask 13 is
The step & scan type exposure control for projecting and exposing on 5 is performed. When the exposure processing for one wafer is completed, the wafer 15 is unloaded in step S508, and when the exposure processing for the final wafer is confirmed in step S509, the exposure sequence ends. If it is not the last wafer, the next step S5
Proceeding to 10, the oxygen concentration level in the exposure optical system is measured as in step S502. Next, step S511
The detected oxygen concentration value is compared with the specified oxygen concentration value, and if the detected value is within the specified value, the process proceeds to step S506 for loading a wafer to be exposed next. If the detected value exceeds the specified value, it is determined that the inert gas purge state is insufficient, and the process proceeds to step S512, where the control unit 103 outputs a laser oscillation prohibition command to the excimer laser 1, and proceeds to step S50.
As in the case of 4, the supply of the inert gas is controlled to a large flow rate. Thereafter, the flow returns to step S510, and the monitoring of the state is continued until the oxygen concentration level in the exposure optical system becomes equal to or less than a specified value. When the oxygen concentration level reaches the specified value or less, the exposure operation is automatically started. After the restart of the exposure operation, in step S513, the control unit 103 returns the flow rate of the inert gas supplied to the exposure optical system to a small flow rate.

In the above-described exposure sequence, the oxygen concentration value in the exposure optical system is measured for each wafer, and the exposure operation is controlled so as to be stopped and cannot be restarted. Measure oxygen concentration value for each wafer
The same effect can be expected by stopping and restarting the exposure operation.

In the embodiments described above, the exposure apparatus of the step-and-scan type is described. However, the same effects can be obtained by applying the present invention to the exposure apparatus of the step-and-repeat type. be able to.

Further, the oxygen concentration meters 36, 3 in FIG.
An ozone densitometer may be used instead of 9 and 41. Since ozone is generated by the absorption of light by the remaining oxygen, the ozone can be used as a means for monitoring a purged state.

Further, as described in the first to third embodiments, after the exposure operation is stopped, control is performed so that the operation cannot be restarted, and control is performed so that the operation is automatically restarted according to the detected oxygen concentration value. The system may be configured such that the device has both of the means and one of them is appropriately selected.

<Embodiment of Device Manufacturing Method> Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described. FIG. 7 shows a flow of manufacturing micro devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micro machines, etc.). In step 1 (circuit design), a device pattern is designed. Step 2 is a process for making a mask on the basis of the designed pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon or glass.
Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes an assembly process (dicing and bonding).
It includes steps such as a packaging step (chip encapsulation). In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 8 shows the wafer process (step 4).
The detailed flow of is shown. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist processing), a resist is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus or exposure method to align and print the circuit pattern of the mask on a plurality of shot areas of the wafer.
Step 17 (development) develops the exposed wafer.
In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps,
Multiple circuit patterns are formed on the wafer.

By using the production method of this embodiment, a large-sized device, which has been conventionally difficult to produce, can be produced at low cost.

[0043]

As described above, according to the present invention,
Since the exposure operation is stopped when the value detected by the component detection means exceeds a predetermined value, the state of gas components on and around the optical path of the exposure optical system is changed during the exposure operation.
It is possible to maintain a predetermined favorable state, thereby maintaining the optical performance of the exposure optical system in a favorable state. Therefore, it is possible to provide a highly reliable exposure apparatus and a device manufacturing method capable of preventing the manufacture of a defective device due to a change in optical performance.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is an explanatory view of a mask in the apparatus of FIG.

FIG. 3 is a flowchart showing an operation flow of the apparatus of FIG. 1;

FIG. 4 is a flowchart illustrating an operation flow according to a second example of the present invention.

FIG. 5 is a flowchart illustrating an operation flow according to a third example of the present invention.

FIG. 6 is an explanatory diagram of a conventional example.

FIG. 7 is a flowchart showing a device manufacturing method that can use the exposure apparatus of the present invention.

FIG. 8 is a detailed flowchart of a wafer process in FIG. 7;

[Explanation of symbols]

1: excimer laser, 13: mask, 14: projection optical system, 15: wafer, 21: mask stage, 25: wafer stage, 32: inert gas supply means, 33 to 34:
Supply system, 36, 39, 41: oxygen concentration meter, 37, 40,
42: exhaust system, 38: exhaust means, 101: illumination system container
102: mask room, 103: control unit, 104: display.

Continuing on the front page (72) Inventor Hiromi Kanemome 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Yasuhiro Kodachi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon stock In-company F term (reference) 5F046 AA22 BA05 CA04 CA08 CB02 CB05 CB13 CB23 DA27 DB14 DC02

Claims (13)

[Claims] An exposure apparatus comprising: an illumination optical system that illuminates a pattern drawn on an original plate with illumination light from a light source; and a projection optical system that projects the pattern onto a substrate to be exposed.
A component detection unit that detects a component of a predetermined gas on or around an optical path of all or a predetermined location from the light source to the substrate to be exposed, and a value detected by the component detection unit exceeds a predetermined value. An exposure apparatus comprising: a control unit that stops an exposure operation in a case. 2. The exposure apparatus according to claim 1, wherein the control unit does not start the exposure operation after stopping the exposure operation unless there is a command to restart the exposure operation. . 3. The control unit according to claim 1, wherein after stopping the exposure operation, the control unit does not start the exposure operation unless a value detected by the component detection unit becomes equal to or less than the predetermined value. 3. The exposure apparatus according to 2. 4. The control device according to claim 1, wherein after the exposure operation is stopped, the exposure operation is started when a value detected by the component detection unit becomes equal to or less than the predetermined value. The exposure apparatus according to any one of Items 1 to 3. 5. A control by the control unit after the control unit stops the exposure operation, wherein the control unit receives a command to restart the exposure operation, and obtains a detection value equal to or less than the predetermined value by the component detection unit. Control is performed so that the exposure operation is started when the detection is performed, or the detection by the component detecting means is repeated until a detection value equal to or less than the predetermined value is obtained. A selection unit for selecting and setting either to start the operation or to control the exposure operation so that it cannot be restarted, and that the control unit performs control according to the setting. The exposure apparatus according to claim 1, wherein: 6. The exposure apparatus according to claim 1, wherein the component detection unit is an oxygen concentration measurement unit. 7. The exposure apparatus according to claim 1, wherein the component detection unit is an ozone concentration detection unit. 8. A container for accommodating the illumination optical system while blocking ventilation from outside air, and a purging means for purging the interior of the container with an inert gas.
The exposure apparatus according to any one of the above items. 9. A container for accommodating the projection optical system while blocking ventilation from outside air, and purging means for purging the interior of the container with an inert gas.
The exposure apparatus according to any one of the above items. 10. A device for supplying an inert gas such that a value detected by said component detection means becomes equal to or less than said predetermined value under control of said control means after said exposure operation is stopped. The exposure apparatus according to claim 1, wherein: 11. The exposure apparatus according to claim 1, wherein the control unit issues a predetermined warning when stopping the exposure operation. 12. The control unit according to claim 1, wherein the detection by the component detection unit is performed at least before exposure for each substrate to be exposed or before exposure for each exposure region of the substrate to be exposed. Any one of items 1 to 11
Exposure apparatus according to Item. 13. A detection value of a component of a predetermined gas on or around a light path of all or a predetermined place from a light source for exposure to a substrate to be exposed using the exposure apparatus according to claim 1. A device is manufactured by performing exposure when is smaller than or equal to a predetermined value.