JP2001162407A - Spindle shaft for tooling device - Google Patents

Spindle shaft for tooling device

Info

Publication number
JP2001162407A
JP2001162407A JP34586499A JP34586499A JP2001162407A JP 2001162407 A JP2001162407 A JP 2001162407A JP 34586499 A JP34586499 A JP 34586499A JP 34586499 A JP34586499 A JP 34586499A JP 2001162407 A JP2001162407 A JP 2001162407A
Authority
JP
Japan
Prior art keywords
spindle shaft
grinding
machine tool
polishing
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34586499A
Other languages
Japanese (ja)
Inventor
Koichi Hatano
光一 波田野
Yasuo Matsumoto
康男 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MEIJI MACHINE
Meiji Machine Co Ltd
Original Assignee
MEIJI MACHINE
Meiji Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MEIJI MACHINE, Meiji Machine Co Ltd filed Critical MEIJI MACHINE
Priority to JP34586499A priority Critical patent/JP2001162407A/en
Publication of JP2001162407A publication Critical patent/JP2001162407A/en
Pending legal-status Critical Current

Links

Landscapes

  • Turning (AREA)
  • Shafts, Cranks, Connecting Bars, And Related Bearings (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent ionization of a semiconductor wafer after grinding and polishing work by generation of metal to generate troubles in super-high precision mirror surface work and flat work, to prevent generation of rust or abrasion in the metal, and to prevent troubles in improving precision in the super- high precision mirror surface work and flat work caused by atmospheric temperature change or differential temperature in heating by friction heat. SOLUTION: In this spindle shaft provided on the column of a machine tool for mainly grinding and polishing semiconductors elevatable and rotatable, and provided with a chuck at a lower end, or spindle shaft rotatably provided on a base of a machine tool and provided with a grinding or polishing plate at an upper end, the spindle shaft is formed of a composite body comprising metal and ceramic in which a molten aluminum alloy is set to penetrate a perform of ceramic grain under no pressure.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は主として超LSI等の製
造工程で基板と成る半導体ウエハに研削又は研磨加工を
施す工作装置のスピンドル軸に関するものであり、更
に、詳細には、超高精度の鏡面加工、平坦加工を求めら
れる半導体ウエハに適応できる工作装置のスピンドル軸
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spindle shaft of a machine tool for grinding or polishing a semiconductor wafer serving as a substrate in a process of manufacturing a super LSI or the like. The present invention relates to a spindle shaft of a machine tool that can be applied to a semiconductor wafer that requires mirror processing and flat processing.

【0002】[0002]

【発明の背景】本発明に係るこの種の半導体ウエハは、
コンピュータ等の電子関連機器、OA機器、モバイル機
器等の集積回路に使用されており、その開発は日々進歩
しており機器そのものの小型化に伴うより一層の極薄化
と、生産性の観点からのより一層の拡径化と、歩留まり
の観点からのより一層の超高精度の品質が要求されてき
ている。
BACKGROUND OF THE INVENTION Semiconductor wafers of this kind according to the present invention are:
It is used in electronic devices such as computers, OA devices, and integrated circuits such as mobile devices. Its development is progressing day by day. There has been a demand for ever-larger diameters and even higher-precision quality from the viewpoint of yield.

【0003】又、これ等の半導体ウエハのデバイスは、
高密度化、高集積化に伴って、64メガバイト以上の超
LSI(ULSI)の量産が始まっており、更に、近年
では256メガバイト或いは1ギガバイト等の超LSI
の時代に移行しつつある。
In addition, these semiconductor wafer devices are:
With the increase in density and the degree of integration, mass production of ultra LSIs (ULSI) of 64 megabytes or more has begun, and in recent years, ultra LSIs of 256 megabytes or 1 gigabyte, etc.
Is shifting to the age of.

【0004】そして、これ等は生産性の観点からのより
一層の拡径化が進み、既に、12インチの半導体ウエハ
の量産が開始され、更に、16インチの半導体ウエハも
試作されている現状であり、又、歩留まりの観点からの
より一層の超高精度の品質が要求されシリコンインゴッ
トのスライシング後の半導体ウエハの両面の超高精度の
鏡面加工、及び、平坦加工は不可欠と成っている。
[0004] In these circumstances, the diameter has been further increased from the viewpoint of productivity, and mass production of 12-inch semiconductor wafers has already started, and furthermore, 16-inch semiconductor wafers have been prototyped. In addition, further ultra-high-precision quality is required from the viewpoint of yield, and ultra-high-precision mirror finishing and flattening of both surfaces of a semiconductor wafer after slicing of a silicon ingot are indispensable.

【0005】[0005]

【従来技術】従来、この種の半導体ウエハのグライディ
ングマシン、ラッピングマシン、ポリシングマシン等で
の研削研磨加工を施す工作装置の下端にチャックを備え
た及び上端に研削又は研磨プレートを備えた夫々のスピ
ンドル軸は鉄、ステンレス等の金属を加工して形成して
いた。
2. Description of the Related Art Conventionally, a spindle having a chuck at a lower end and a grinding or polishing plate at an upper end of a machine for performing grinding and polishing of a semiconductor wafer of this kind by a grinding machine, a lapping machine, a polishing machine or the like. The shaft was formed by processing a metal such as iron or stainless steel.

【0006】[0006]

【解決しようとする課題】然し乍ら、金属からは金属イ
オンが発生して研削研磨加工後の半導体ウエハがイオン
化して超高精度の鏡面加工及び平坦加工に障害が屡々発
生し、又、金属は錆や摩耗が発生すると共に、雰囲気中
の温度変化や、摩擦熱による加温等の温度差による膨縮
が超高精度の鏡面加工及び平坦加工の精度向上の障害の
要因と成っていた。
However, metal ions are generated from the metal, and the semiconductor wafer after the grinding and polishing is ionized, which often causes obstacles to ultra-high precision mirror finishing and flattening. In addition to the occurrence of wear and abrasion, temperature changes in the atmosphere and expansion and contraction due to temperature differences such as heating due to frictional heat have become obstacles to the improvement of the precision of mirror finishing and flattening with ultra-high accuracy.

【0007】[0007]

【課題を解決するための手段】本発明は、前述の課題に
鑑み、鋭意研鑽の結果、主として半導体ウエハを研削、
研磨する工作機械のコラムに昇降且つ回転自在に設け下
端にチャックを備えたスピンドル軸、又は、工作機械の
基台に回転自在に設け上端に研削又は研磨プレートを備
えたスピンドル軸であって、スピンドル軸をセラミック
ス粒を成形したプリフォームに溶融アルミ合金を非加圧
で浸透させた金属とセラミックの複合体で形成したもの
である。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and as a result of diligent studies, it has been found that a semiconductor wafer is mainly ground,
A spindle shaft rotatably provided on a column of a machine tool to be polished and rotatably provided with a chuck at a lower end thereof, or a spindle shaft rotatably provided on a base of a machine tool and provided with a grinding or polishing plate at an upper end thereof, comprising: The shaft is formed of a composite of metal and ceramic in which a molten aluminum alloy is impregnated without pressure into a preform formed by molding ceramic grains.

【0008】従って、本発明の目的は、超高精度を求め
られる半導体ウエハの加工面にイオン化による影響を与
えること無く研削加工、研磨加工を施すスピンドル軸を
提供するものである。
Accordingly, an object of the present invention is to provide a spindle shaft for performing a grinding process and a polishing process without affecting a processing surface of a semiconductor wafer requiring ultra-high accuracy due to ionization.

【0009】[0009]

【発明の作用】本発明は、工作装置のスピンドル軸を金
属とセラミックの複合体で形成したことによって、金属
製の場合のように金属イオンや錆を発生させることな
く、更に、雰囲気中の温度変化や摩耗による温度差の影
響も少ないものである。
According to the present invention, since the spindle shaft of the machine tool is formed of a composite of metal and ceramic, metal ions and rust are not generated as in the case of metal, and the temperature in the atmosphere is further reduced. The influence of the temperature difference due to change and wear is small.

【0010】[0010]

【実施例】次いで、本発明の工作装置のスピンドル軸を
実施例の図面によって説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a spindle shaft of a machine tool according to the present invention will be described with reference to the drawings.

【0011】図1は本発明の工作装置のスピンドル軸の
実施例を説明するためのラッピングマシーンの概要正面
図である。
FIG. 1 is a schematic front view of a wrapping machine for explaining an embodiment of a spindle shaft of a machine tool according to the present invention.

【0012】本発明は主として超LSI等の製造工程で
基板と成る半導体ウエハに研削又は研磨加工を施す工作
装置のスピンドル軸1A.1Bに関するものであり、更
に、詳細には、超高精度の鏡面加工、平坦加工を求めら
れる半導体ウエハWに適応できる工作装置のスピンドル
軸1A.1Bに関するものであり、請求項1に記載の工
作装置のスピンドル軸1Aは、主として半導体ウエハW
を研削、研磨する工作機械の基台11に立設させた基軸
12にコラム13に昇降且つ回転自在に設け下端にチャ
ック14を備えたスピンドル軸1Aであって、前記スピ
ンドル軸1Aをセラミックス粒を成形したプリフォーム
に溶融アルミ合金を非加圧で浸透させた金属とセラミッ
クの複合体で形成したものである。
The present invention mainly relates to a spindle shaft 1A.1 of a machine tool for grinding or polishing a semiconductor wafer serving as a substrate in a manufacturing process of a super LSI or the like. 1B, and more specifically, a spindle shaft 1A.1 of a machine tool that can be applied to a semiconductor wafer W requiring ultra-high-precision mirror processing and flat processing. 1B, wherein the spindle shaft 1A of the machine tool according to claim 1 mainly includes a semiconductor wafer W
Is a spindle shaft 1A provided on a base shaft 12 erected on a base 11 of a machine tool for vertically grinding and polishing, and rotatably provided on a column 13 and rotatably provided with a chuck 14 at a lower end. It is formed of a composite of metal and ceramic in which a molten aluminum alloy is impregnated into a molded preform without applying pressure.

【0013】更に、請求項2に記載の工作装置のスピン
ドル軸1Bは、主として半導体ウエハWを研削、研磨す
る工作機械の基台11に回転自在に設け上端に研削又は
研磨プレート15を備えたスピンドル軸1Bであって、
前記スピンドル軸1Bをセラミックス粒を成形したプリ
フォームに溶融アルミ合金を非加圧で浸透させた金属と
セラミックの複合体で形成したものである。
A spindle shaft 1B of a machine tool according to a second aspect of the present invention is a spindle having a grinding or polishing plate 15 at its upper end which is rotatably provided on a base 11 of a machine tool for mainly grinding and polishing a semiconductor wafer W. Axis 1B,
The spindle shaft 1B is formed of a composite of metal and ceramic in which a molten aluminum alloy is impregnated without pressure into a preform formed by molding ceramic grains.

【0014】即ち、本発明の工作装置の一方のスピンド
ル軸1Aは、図1に図示する如く、実施例のラッピング
マシンによって説明すると、基台11に立設された基軸
12に旋回可能に設けられたコラム13と、該コラム1
3に昇降且つ回転自在に設けられているものであり、他
方のスピンドル軸1Bは、基台11に回転可能に配設さ
れているものである。
That is, as shown in FIG. 1, one of the spindle shafts 1A of the machine tool of the present invention is rotatably provided on a base shaft 12 erected on a base 11, as described by the lapping machine of the embodiment. Column 13 and column 1
The other spindle shaft 1 </ b> B is rotatably disposed on the base 11.

【0015】そして、一方のスピンドル軸1Aの下端に
はチャック14が設けられており、該チャック14の下
面には非研削加工又は研磨加工のワークである半導体ウ
エハWをバキューム或いは水貼り等の手段によって取着
するものである。
A chuck 14 is provided at the lower end of one of the spindle shafts 1A. A semiconductor wafer W which is a non-grinding or polishing work is attached to the lower surface of the chuck 14 by means such as vacuuming or water bonding. It is to be attached by.

【0016】次いで、前記チャック14に取着された半
導体ウエハスWはピンドル軸1Aの降下と回転によっ
て、逆方向に回転する後述する研削又は研磨プレート1
5であるラッピングテーブルとの間に挾圧されてラッピ
ングされるものである。
Next, the semiconductor wafer W attached to the chuck 14 is rotated in the opposite direction by the lowering and rotation of the pindle shaft 1A, and the grinding or polishing plate 1 described later is rotated.
5 is wrapped by being pressed between the lapping table 5 and the wrapping table.

【0017】更に、他方のスピンドル軸1Bは基台11
に配設された回転可能な研削又は研磨プレート15であ
るラッピングテーブルを上端に設けているもので、駆動
源のモータ(図示せず)等と機械的に接続され回転され
るものである。
Further, the other spindle shaft 1B is connected to the base 11
A lapping table, which is a rotatable grinding or polishing plate 15 disposed at the upper end, is mechanically connected to a drive source motor (not shown) or the like and is rotated.

【0018】この場合、チャック14又は研削又は研磨
プレート15はセラミックで形成されているものを使用
しており、スピンドル軸1A.1Bは本発明の金属とセ
ラミックの複合体を用いるものである。
In this case, the chuck 14 or the grinding or polishing plate 15 is made of ceramic, and the spindle shaft 1A. 1B uses the composite of metal and ceramic of the present invention.

【0019】つまり、本発明の工作装置のスピンドル軸
1A.1Bを成形する材料は、セラミックス粒で成形し
たプリフォームに溶融アルミ合金を非加圧で浸透させた
金属とセラミックの複合体であり、スピンドル軸1A.
1Bの強度にも充分耐えうると共に、金属イオンの発生
も皆無と成るものである。
That is, the spindle shaft 1A. The material for forming the spindle shaft 1A.1B is a composite of metal and ceramic in which a molten aluminum alloy is impregnated into a preform formed of ceramic grains without applying pressure.
1B can withstand the strength sufficiently, and there is no generation of metal ions.

【0020】[0020]

【発明の効果】前述の構成によって、本発明の工作機械
のスピンドル軸は、セラミックス粒を成形したプリフォ
ームに溶融アルミ合金を非加圧で浸透させた金属とセラ
ミックの複合体で形成しているため、金属製の場合のよ
うに金属イオンや錆を発生させることなく、更に、雰囲
気中の温度変化や摩耗の加熱による温度差による膨縮の
少ないものであり、極めて有意義な効果を奏するもので
ある。
According to the above construction, the spindle shaft of the machine tool of the present invention is formed of a composite of metal and ceramic in which a molten aluminum alloy is impregnated into a preform formed of ceramic grains without applying pressure. Therefore, it does not generate metal ions or rust as in the case of a metal, and furthermore, has little expansion and contraction due to a temperature change in the atmosphere and a temperature difference caused by heating of abrasion, and has an extremely significant effect. is there.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は本発明の工作装置のスピンドル軸の実施
例を説明するためのラッピングマシーンの概要正面図で
ある。
FIG. 1 is a schematic front view of a wrapping machine for explaining an embodiment of a spindle shaft of a machine tool according to the present invention.

【符号の説明】[Explanation of symbols]

W 半導体ウエハ 1A 一方のスピンドル軸 1B 他方のスピンドル軸 11 基台 12 基軸 13 コラム 14 チャック 15 研削又は研磨テーブル W Semiconductor wafer 1A One spindle shaft 1B The other spindle shaft 11 Base 12 Base shaft 13 Column 14 Chuck 15 Grinding or polishing table

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】主として半導体ウエハを研削、研磨する工
作機械のコラムに昇降且つ回転自在に設け下端にチャッ
クを備えたスピンドル軸であって、前記スピンドル軸を
セラミックス粒を成形したプリフォームに溶融アルミ合
金を非加圧で浸透させた金属とセラミックの複合体で形
成したことを特徴とする工作装置のスピンドル軸。
1. A spindle shaft having a chuck provided at a lower end thereof and rotatably mounted on a column of a machine tool for grinding and polishing a semiconductor wafer, wherein the spindle shaft is formed of a preform formed of ceramic grains. A spindle shaft of a machine tool, wherein the spindle shaft is formed of a composite of a metal and a ceramic in which an alloy is impregnated without pressure.
【請求項2】主として半導体ウエハを研削、研磨する工
作機械の基台に回転自在に設け上端に研削又は研磨プレ
ートを備えたスピンドル軸であって、前記スピンドル軸
をセラミックス粒を成形したプリフォームに溶融アルミ
合金を非加圧で浸透させた金属とセラミックの複合体で
形成したことを特徴とする工作装置のスピンドル軸。
2. A spindle shaft mainly rotatably provided on a base of a machine tool for grinding and polishing a semiconductor wafer, the spindle shaft having a grinding or polishing plate at an upper end, wherein the spindle shaft is a preform formed by forming ceramic grains. A spindle shaft of a machine tool, wherein the spindle shaft is formed of a composite of a metal and a ceramic in which a molten aluminum alloy is impregnated without pressure.
JP34586499A 1999-12-06 1999-12-06 Spindle shaft for tooling device Pending JP2001162407A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34586499A JP2001162407A (en) 1999-12-06 1999-12-06 Spindle shaft for tooling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34586499A JP2001162407A (en) 1999-12-06 1999-12-06 Spindle shaft for tooling device

Publications (1)

Publication Number Publication Date
JP2001162407A true JP2001162407A (en) 2001-06-19

Family

ID=18379521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34586499A Pending JP2001162407A (en) 1999-12-06 1999-12-06 Spindle shaft for tooling device

Country Status (1)

Country Link
JP (1) JP2001162407A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ309163B6 (en) * 2020-11-28 2022-03-30 ŠMT a.s. Hybrid drilling spindle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ309163B6 (en) * 2020-11-28 2022-03-30 ŠMT a.s. Hybrid drilling spindle

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