JPH07201788A - Semiconductor grinder - Google Patents
Semiconductor grinderInfo
- Publication number
- JPH07201788A JPH07201788A JP33571993A JP33571993A JPH07201788A JP H07201788 A JPH07201788 A JP H07201788A JP 33571993 A JP33571993 A JP 33571993A JP 33571993 A JP33571993 A JP 33571993A JP H07201788 A JPH07201788 A JP H07201788A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- elastic body
- rotating
- semiconductor
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体製造工程の中の
配線工程において発生する配線段差を平坦化処理するた
めの半導体研磨装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor polishing apparatus for flattening a wiring step generated in a wiring process in a semiconductor manufacturing process.
【0002】[0002]
【従来の技術】従来、半導体の配線段差の平坦化処理の
ための研磨加工は、図2に示すように、被加工物の配線
段差のあるシリコンウェハ21を加圧機構を備えたチャ
ック22に固定し、それを回転機構の備えられた定盤2
3に取付けた発泡ポリウレタン等の研磨布よりなるポリ
シャー24に一定荷重で加圧し、pH調整のされたコロ
イダルシリカ等の研磨剤を供給して行われていた。2. Description of the Related Art Conventionally, as shown in FIG. 2, a polishing process for flattening a wiring step of a semiconductor is performed by placing a silicon wafer 21 having a wiring step of a workpiece on a chuck 22 equipped with a pressing mechanism. Surface plate 2 that is fixed and has a rotation mechanism
It was carried out by applying a constant load to a polisher 24 made of a polishing cloth such as foamed polyurethane attached to No. 3 and supplying a polishing agent such as pH-adjusted colloidal silica.
【0003】[0003]
【発明が解決しようとする課題】配線処理されたシリコ
ンウェハ21は、シリコン、配線材料、絶縁膜材料の線
膨脹係数が異なる等の理由から反りが発生している。ま
た、加工の履歴でデバイス面の裏面の平面度も未加工時
の物と比較すると劣化している。従って、デバイス面を
平面に規制しようとした場合、前述の研磨装置ではチャ
ック22を基準とできないのでポリシャー24にシリコ
ンウェハ21を押し付けることに行われる。しかし、こ
の場合、ウエハ面内の圧力分布が不均一になってしまう
ため、研磨レートも不均一となり、研磨過剰あるいは研
磨不足の箇所が発生し、不良になり易い。 そこで本発
明はウェハ面内を均一な研磨レートで加工できる研磨装
置を提供することを目的とする。The silicon wafer 21 subjected to the wiring is warped because of the different linear expansion coefficients of silicon, the wiring material, and the insulating film material. In addition, the flatness of the back surface of the device surface is deteriorated in the processing history as compared with the unprocessed one. Therefore, when the device surface is to be restricted to a flat surface, the chuck 22 cannot be used as a reference in the above-described polishing apparatus, and therefore the silicon wafer 21 is pressed against the polisher 24. However, in this case, the pressure distribution in the wafer surface becomes non-uniform, so that the polishing rate also becomes non-uniform, and over-polishing or under-polishing portions are generated, which easily causes defects. Therefore, an object of the present invention is to provide a polishing apparatus capable of processing the surface of a wafer at a uniform polishing rate.
【0004】[0004]
【課題を解決するための手段】上記目的を達成するため
に、本発明の研磨装置は、内圧を有した弾性体上にポリ
シャーを取付けた研磨工具と被加物のシリコンウェハを
それぞれ回転させ、かつ回転軸の位置をずらして配置さ
せてなるものである。In order to achieve the above object, a polishing apparatus of the present invention is configured such that a polishing tool having a polisher mounted on an elastic body having an internal pressure and a silicon wafer to be added are rotated respectively. Moreover, the position of the rotating shaft is displaced.
【0005】[0005]
【作用】この構成により、研磨工具のポリシャーは一定
圧力の状態で被加工物のシリコンウェハに加圧される。
また、各回転軸の位置がずれているため、各軸の回転に
よってシリコンウェハ21面上にポリシャー24との相
対運動が生じる。With this structure, the polisher of the polishing tool is pressed against the silicon wafer to be processed at a constant pressure.
Further, since the positions of the respective rotary shafts are deviated, the relative motion with the polisher 24 occurs on the surface of the silicon wafer 21 due to the rotation of the respective shafts.
【0006】また加工中に軸のずれ量を可変できるの
で、研磨レート分布に合わせてポリシャー軸を移動さ
せ、ウェハ21の中心部あるいは外周部の加工を行え
る。さらに、各軸高速回転させることにより、相対速度
を増大させ、発生する動圧により凹凸のあるウェハ21
とポリシャー24の密着性を低下させてウェハの凸部に
のみポリシャーあるいは研磨剤を作用させることができ
る。Further, since the axial shift amount can be varied during processing, the polishing shaft can be moved in accordance with the polishing rate distribution to process the central portion or outer peripheral portion of the wafer 21. Further, by rotating each axis at high speed, the relative speed is increased and the wafer 21 having irregularities due to the generated dynamic pressure is used.
It is possible to lower the adhesion of the polisher 24 so that the polisher or the polishing agent acts only on the convex portions of the wafer.
【0007】その結果、半導体の平坦化研磨が可能とな
る。As a result, it becomes possible to polish and flatten the semiconductor.
【0008】[0008]
【実施例】以下、本発明の実施例を図を参照しながら説
明する。Embodiments of the present invention will be described below with reference to the drawings.
【0009】1は加工される被加工シリコンウェハであ
り、上面に配線等のデバイスが施されていて微細な凹凸
がある。シリコンウェハ1をワーク回転スピンドル2の
端部に取り付けられたチャック3に吸着あるいはワック
スにて固定する。回転スピンドル2はタイミングベルト
4を介してモータ5により回転する。一方、研磨工具側
であるが、研磨スピンドル6はベルト7を介してモータ
8により回転する。研磨スピンドル6のシャフトは中空
になっていて、ワーク側の端部には、ポリシャー9を弾
性体10に貼り付けた研磨工具11が取り付いている。
また、もう一方の端部にはロータリージョイント12が
取り付いていて、ロータリージョイント12側より流体
を注入することにより弾性体をワーク側に変形できるよ
うになっている。流体は圧力計13にて0.1〜2kgf
/cm2の所定の圧力に設定される。この研磨スピンドル
6及びモータ8はスライダー14上に固定されていてエ
アーシリンダー15により上下に可動できる。さらにス
ライダー14はX軸スライドテーブル16に取り付いて
いて移動量をボールネジ17に直結したACサーボモー
タ18を制御BOX19にて数値制御できるようになっ
ている。Reference numeral 1 denotes a silicon wafer to be processed, which has a device such as wiring on its upper surface and has fine irregularities. The silicon wafer 1 is adsorbed or fixed to the chuck 3 attached to the end of the work rotating spindle 2 with a wax. The rotary spindle 2 is rotated by a motor 5 via a timing belt 4. On the other hand, on the side of the polishing tool, the polishing spindle 6 is rotated by the motor 8 via the belt 7. The shaft of the polishing spindle 6 is hollow, and a polishing tool 11 in which a polisher 9 is attached to an elastic body 10 is attached to the end portion on the work side.
A rotary joint 12 is attached to the other end of the elastic body so that the elastic body can be deformed toward the work by injecting fluid from the rotary joint 12 side. Fluid is 0.1 to 2 kgf with pressure gauge 13.
It is set to a predetermined pressure of / cm 2 . The polishing spindle 6 and the motor 8 are fixed on a slider 14 and can be moved up and down by an air cylinder 15. Further, the slider 14 is attached to the X-axis slide table 16, and the movement amount of the AC servo motor 18 directly connected to the ball screw 17 can be numerically controlled by the control box 19.
【0010】この状態でポリシャー9を60〜3600
rpm、シリコンウェハ1を60〜3600rpmで回転さ
せ、研磨剤としてpH調整したコロイダルシリカあるい
は酸化セリウムを供給して研磨加工を行う。特に回転数
を上げていくとウェハの微細凹凸で発生する動圧が高く
なり、凸部が選択的に除去され易くなり、平坦化が促進
される。以上より半導体ウェハの平坦化加工が行える。In this state, polisher 9 is added to 60-3600.
rpm, the silicon wafer 1 is rotated at 60 to 3600 rpm, and pH-adjusted colloidal silica or cerium oxide is supplied as an abrasive to perform polishing. In particular, as the number of rotations is increased, the dynamic pressure generated by the fine unevenness of the wafer is increased, the convex portions are easily removed selectively, and the flattening is promoted. As described above, the flattening process of the semiconductor wafer can be performed.
【0011】[0011]
【発明の効果】本発明の半導体研磨装置によれば、以上
のように取付けられたポリシャーを圧内を有した弾性体
により一定加圧で被加工シリコンウェハに押し付けて回
転し、被加工シリコンウェハも回転させるので、ポリシ
ャーが被加工シリコンウェハの反り等の形状に影響され
ずにウェハ面内で一様な研磨レートで平坦化研磨を行う
ことができる。According to the semiconductor polishing apparatus of the present invention, the polisher attached as described above is pressed against the silicon wafer to be processed by an elastic body having an inward pressure with a constant pressure to rotate the silicon wafer to be processed. Since the polishing is also rotated, the polisher can perform flattening polishing at a uniform polishing rate within the wafer surface without being affected by the shape of the silicon wafer to be processed such as warpage.
【図1】本発明の一実施例における半導体研磨装置の構
成図FIG. 1 is a configuration diagram of a semiconductor polishing apparatus according to an embodiment of the present invention.
【図2】従来の研磨装置の要部構成図FIG. 2 is a configuration diagram of a main part of a conventional polishing apparatus
1 シリコンウェハ 9 ポリシャ 10 弾性体 1 Silicon wafer 9 Polisher 10 Elastic body
Claims (3)
被加工物を固定し、回転運動する機構と内圧を有した弾
性体の表面に研磨布を取付けた研磨工具を回転運動させ
る機構を具備するとともに、それぞれの回転軸をずらし
た位置に配置させてなる半導体研磨装置。1. A mechanism for fixing and rotating a workpiece to which fine processing is applied to form irregularities and a mechanism for rotating a polishing tool having a polishing cloth attached to the surface of an elastic body having internal pressure. And a semiconductor polishing apparatus in which the respective rotation axes are displaced.
て可変できることを特徴とした請求項1記載の半導体研
磨装置。2. The semiconductor polishing apparatus according to claim 1, wherein the distance between the rotating shafts can be varied by numerical control during processing.
の相対運動により発生する動圧力で研磨布を被加工物に
対して被接触に近い状態で作用させることを特徴とした
請求項1記載の半導体研磨装置。3. The tool and the work piece are rotated at a high speed, and the polishing cloth is caused to act on the work piece in a state of being in contact with the work piece by a dynamic pressure generated by the relative movement of the tool and the work piece. The semiconductor polishing apparatus described.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33571993A JPH07201788A (en) | 1993-12-28 | 1993-12-28 | Semiconductor grinder |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33571993A JPH07201788A (en) | 1993-12-28 | 1993-12-28 | Semiconductor grinder |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07201788A true JPH07201788A (en) | 1995-08-04 |
Family
ID=18291713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33571993A Pending JPH07201788A (en) | 1993-12-28 | 1993-12-28 | Semiconductor grinder |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07201788A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111745527A (en) * | 2020-07-06 | 2020-10-09 | 蚌埠知博自动化技术开发有限公司 | Metal material surface treatment device |
CN115351687A (en) * | 2022-08-29 | 2022-11-18 | 来安县泰阳聚氨酯制品有限公司 | Wear-resistant polyurethane processing device |
-
1993
- 1993-12-28 JP JP33571993A patent/JPH07201788A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111745527A (en) * | 2020-07-06 | 2020-10-09 | 蚌埠知博自动化技术开发有限公司 | Metal material surface treatment device |
CN115351687A (en) * | 2022-08-29 | 2022-11-18 | 来安县泰阳聚氨酯制品有限公司 | Wear-resistant polyurethane processing device |
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