JP2001160532A - Substrate treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively prevent or suppress mist or contamination generated from each of parts of or around a substrate from being stuck to the substrate, when rotating the substrate to be treated during or before and after treatment. SOLUTION: This unit (SCR) 28 has a treatment chamber 60, composed of an almost hexagonal housing or casing and a spinner-shaped scrubber cleaning part 62 is provided at the central part of this treatment chamber 60. Cleaning air E in a clean room is led from an opening 104 on a top plate 102 into the treatment chamber 60 and is fed to a substrate G on a chuck plate 68 by a down flow, while being conically spread outside in the diameter direction inside the chamber. A chamfering part 110 for chamfering the space of respective corner parts 108 between the top plate 102 and respective two adjacent sidewalls 112 of the treatment chamber 60 guides an air current, which is blown above a cap 64 in the spin rotation, along the sidewall surfaces peripherally or downwardly.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spinner type processing apparatus for performing predetermined processing by spinning a substrate to be processed in a processing container, and more particularly to a spinner type liquid processing apparatus for performing a liquid processing using a processing liquid. It relates to a processing device.

[0002]

2. Description of the Related Art A spinner type liquid processing apparatus is, for example,
Substrates to be processed (LC) in the photolithography process of manufacturing liquid crystal display (LCD) and semiconductor devices
D substrate, semiconductor wafer, etc.) are used in processes such as cleaning, resist coating, and development performed by spinning.

In a spinner type liquid processing apparatus, a processing liquid (for example, a cleaning liquid, a resist liquid, a developing liquid, a rinsing liquid, etc.) is supplied onto a substrate while rotating the substrate to be processed substantially horizontally. Is inevitably scattered in all directions. Therefore, the side wall of the processing container is formed in a cup shape so as to surround the periphery of the substrate, and the processing liquid scattered in all directions from the substrate is applied to the inner wall of the cup, and the processing solution is drained from the drain port provided at the bottom of the processing container to outside the container. I try to discharge. Also, an exhaust port separate from the drain port is provided at the bottom of the processing container,
The atmosphere in the container is exhausted from the exhaust port.

[0004]

In the spinner-type liquid processing apparatus as described above, an air flow containing foreign matter generated by the rotation of the substrate and / or a mist (droplet) of the processing liquid scattered from the substrate during the liquid processing. Is not completely drawn into the waste or exhaust port at the bottom of the container, and a considerable amount of airflow and / or
Or, the mist floats near the substrate or adheres to the surrounding parts, especially the inner wall of the cup.

Further, in spin drying in which a substrate is rotated after a liquid treatment such as cleaning or rinsing to shake off the treatment liquid, a large number of fine mist is generated not only from the substrate but also from the inner wall of the cup because the rotation speed is several steps higher. Further, there is a problem that the generated mist or the like flies (winds) over the substrate on the airflow rising along the inner wall of the cup, and then descends and adheres or re-adheres on the substrate surface. Of course, such adhesion of mist and the like to the substrate
It is not desirable because it causes contamination and particles.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and mist and / or foreign matter generated from the substrate or various parts around the substrate when the substrate to be processed is rotated during processing or before and after processing. It is an object of the present invention to provide a substrate processing apparatus capable of effectively preventing or suppressing adhesion of a substrate to a substrate and improving processing quality.

[0007]

In order to achieve the above object, a substrate processing apparatus of the present invention has a holding means for mounting a substrate to be processed thereon, and holds the substrate together with the holding means. A rotating unit that rotates horizontally, a processing container that houses the rotating unit, and an upper portion of the holding unit is open,
A processing chamber in which the processing container is installed in the room, and an opening for introducing clean air into the room is provided above the processing container, and an airflow that winds up above the processing container in the processing chamber is formed in a circumferential direction or downward. And a first airflow guide unit for guiding the airflow.

[0008] In this configuration of the substrate processing apparatus, the clean air introduced into the processing chamber through the opening of the processing chamber is supplied to the substrate immediately below by almost downflow. On the other hand, due to the rotation of the substrate and the holding means, an airflow containing mist and the like rises along the inner wall of the processing container, and winds above the processing container outside the downflow. The swirled airflow is guided in the processing chamber by the first airflow guide in the circumferential direction or downward along the inner wall of the processing chamber, so that the downflow of the clean air is not disturbed. A mist or the like that rolls up in the airflow is guided along the inner wall of the processing chamber in the circumferential direction or downward by the first airflow guide together with the airflow, so that it is not entrained in the downflow of the clean air. Thereby, adhesion of mist or the like to the substrate surface is prevented or suppressed.

According to one aspect of the substrate processing apparatus, the processing chamber has a side wall formed in a polygonal cylindrical shape, and a top plate connected to an upper end of the side wall and having the opening at the center. The first airflow guide includes a chamfer for chamfering a space at each corner formed between the top plate and the side wall.

[0010] In this configuration, the airflow that has rolled up above the processing vessel outside the downflow of the clean air introduced into the chamber through the opening of the top plate of the processing chamber rotates so as to be suppressed by the top plate. While being spread radially outward, it is guided in the circumferential direction or downward along the side wall surface by the airflow guide near the upper corner of the processing chamber. A configuration in which the first airflow guide is provided not only at the corners but also at the corners of each side is also possible.

Alternatively, as another aspect, the processing chamber has a side wall formed in a polygonal cylindrical shape, and a dome-shaped top plate connected to the upper end of the side wall and provided with the opening at the center. The first airflow guide portion may include a chamfered portion for chamfering a corner space formed between the inner wall of the top plate and the side wall.

In this configuration, the inner wall of the dome-shaped top plate presses the rolled-up airflow radially outward, and at the same time, acts as an airflow guide to guide the airflow in the circumferential direction or downward. In addition, since a chamfer for airflow guidance is provided at a corner between the top plate and the four side walls, the airflow is guided in the circumferential direction or downward also here.

Further, as another aspect, the processing chamber has a cylindrical side wall and a dome-shaped top plate connected to the upper end of the side wall and having the opening at the center thereof. 1
May be configured to include the inner wall of the top plate.

In this configuration, the inner wall of the dome-shaped top plate presses the rolled-up airflow radially outward, and at the same time acts as a first airflow guide to guide the airflow in the circumferential direction or downward. Since the cylindrical side wall is a curved surface that is continuous with the top plate, the airflow from the top plate smoothly moves to the side wall and is guided in the circumferential direction or downward again here.

Further, in the substrate processing apparatus according to the present invention, a second airflow guiding portion may be provided for guiding an airflow rising above the processing vessel in the processing chamber obliquely upward toward the outside in the radial direction. In this configuration, the airflow that has rolled up above the processing vessel outside the downflow of the clean air from the opening is guided obliquely upward toward the radial outside by the second airflow guide portion in the processing chamber, and near the side wall. , And is guided by the first airflow guide section in the circumferential direction or downward.

An exhaust port may be provided at the bottom of the processing container, and clean air supplied to the substrate from the opening of the processing chamber by downflow may be drawn into the exhaust port and sent to an external exhaust system. In the processing chamber, an exhaust port is provided on the outer bottom surface or the lower part of the side wall of the processing chamber, and the airflow, mist, etc., which have flowed to the bottom of the processing chamber under the guidance of the first airflow guide portion, are exhausted from the exhaust port to the outside. May be discharged to the system.

[0017]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 shows a coating and developing system as a configuration example to which the substrate processing apparatus of the present invention can be applied. This coating and developing system is installed in a clean room, and performs, for example, cleaning, resist coating, pre-baking, developing and post-baking in a photolithography process in an LCD manufacturing process, for example, using an LCD substrate as a substrate to be processed. is there. The exposure processing is performed by an external exposure apparatus (not shown) installed adjacent to this system.

This coating and developing system is roughly divided into a cassette station (C / S) 10, a process station (P / S) 12, and an interface unit (I / O).
/ F) 14.

A cassette station (C / S) 10 installed at one end of the system includes a cassette stage 16 on which a predetermined number of, for example, four cassettes C accommodating a plurality of substrates G can be placed, and a cassette stage 16 on this stage 12. And a sub-arm mechanism 20 for loading and unloading the substrate G with respect to the cassette C. The sub arm mechanism 20 has a transfer arm that can hold the substrate G, is operable in four axes of X, Y, Z, and θ, and is a process station (P / S) described later.
The transfer of the substrate G to and from the transfer device 38 on the 12th side can be performed.

The process station (P / S) 12
The cleaning process unit 22, the coating process unit 24, and the developing process unit 26 are sequentially changed from the cassette station (C / S) 10 side to the substrate relay unit 23, the chemical solution supply unit 25.
And are provided in a horizontal row with the space 25 interposed therebetween.

The cleaning process unit 22 includes two scrubber cleaning units (SCRs) 28 and two upper and lower ultraviolet irradiation / irradiation units.
It includes a cooling unit (UV / COL) 30, a heating unit (HP) 32, and a cooling unit (COL).

The coating process unit 24 includes a resist coating unit (CT) 40 and a reduced-pressure drying unit (VD) 42
And the edge remover unit (ER) 44 and the upper and lower 2
Stage type adhesion / cooling unit (AD / COL) 4
6, upper and lower two-stage heating / cooling unit (HP / COL)
48 and a heating unit (HP) 50.

The developing process section 26 includes three developing units (DEV) 52, two upper and lower two-stage heating / cooling units (HP / COL) 54, and a heating unit (HP) 5
6 is included.

At the center of each of the process sections 22, 24 and 26, transport paths 36, 52 and 58 are provided in the longitudinal direction, and the main transport devices 38, 54 and 60 move along the respective transport paths and Each unit in the unit is accessed to carry in / out or carry in the substrate G. In this system, in each of the process units 22, 24, and 26, a spinner system unit (SCR, CT, DEV, etc.) is disposed on one side of the transport paths 36, 52, and 58, and a heat treatment system is disposed on the other side. (HP, COL, etc.) are arranged.

An interface (I / F) 14 installed at the other end of the system has an extension (substrate transfer section) 54 on the side adjacent to the process station 12.
And a buffer stage 56, and a transport mechanism 58 on the side adjacent to the exposure apparatus.

FIG. 2 shows a processing procedure in the coating and developing system. First, the cassette station (C
In (/ S) 10, the sub-arm mechanism 20 takes out one substrate G from the predetermined cassette C on the stage 12 and transfers it to the transfer device 38 of the cleaning processing unit 22 of the process station (P / S) 12 (step). S1).

In the cleaning process section 22, the substrate G
First, they are sequentially carried into an ultraviolet irradiation / cooling unit (UV / COL) 30, where the first ultraviolet irradiation unit (UV) is subjected to dry cleaning by ultraviolet irradiation, and is cooled to a predetermined temperature in the next cooling unit (COL) ( Step S
2). This ultraviolet cleaning mainly removes organic substances on the substrate surface.

Next, the substrate G is provided with a scrubber cleaning unit (S
One of the CRs 28 undergoes a scrubbing cleaning process to remove particulate contamination from the substrate surface (step S3).
After the scrubbing cleaning, the substrate G is heated (H
(P) 32 undergoes dehydration by heating (step S)
4) Then, the substrate is cooled to a certain substrate temperature by the cooling unit (COL) 34 (step S5). Thus, the pre-processing in the cleaning process unit 22 is completed, and the substrate G is transported by the main transport unit 38 to the coating process unit 24 via the substrate transfer unit 23.

In the coating processing section 24, the substrate G
First, the adhesion / cooling unit (AD / COL) 4
6 in sequence, and the first adhesion unit (A
In D), a hydrophobizing treatment (HMDS) is performed (step S).
6) Then, the substrate is cooled to a constant substrate temperature in the next cooling unit (COL) (step S7).

Thereafter, the substrate G is coated with a resist solution in a resist coating unit (CT) 40, then subjected to a drying process under reduced pressure in a reduced-pressure drying unit (VD) 42, and then in an edge remover unit (ER) 44. Excess (unnecessary) resist on the periphery is removed (step S
8).

Next, the substrate G is supplied to the heating / cooling unit (H
P / COL) 48, and the first heating unit (HP) performs baking (pre-bake) after coating (step S9), and then cools to a constant substrate temperature by the cooling unit (COL) (step S9). Step S10). In addition,
The heating unit (HP) 50 can be used for baking after the application.

After the coating process, the substrate G is transferred to the interface (I / F) 54 by the main transfer device 54 of the coating process unit 24 and the main transfer device 60 of the development process unit 26.
To the exposure apparatus from there (step S
11). The exposure device exposes a resist on the substrate G to a predetermined circuit pattern. After the pattern exposure, the substrate G is transferred from the exposure apparatus to the interface (I / F) 54.
Is returned to. The transport mechanism 58 of the interface unit (I / F) 54 transfers the substrate G received from the exposure apparatus to the process station (P / S) 2 via the extension 54.
4 (step S11).

In the developing process section 26, the substrate G
One of the developing units (DEV) 52 undergoes a developing process (step S12), and is then sequentially loaded into one of the heating / cooling units (HP / COL) 54, where post-baking is performed in the first heating unit (HP). Is performed (step S13), and then cooled to a certain substrate temperature by the cooling unit (COL) (step S14). A heating unit (HP) 56 can be used for this post-baking.

The substrate G that has been subjected to a series of processes in the developing process section 26 is returned to the cassette station (C / S) 10 by the transfer devices 60, 54, and 38 in the process station (P / S) 24. Sub arm mechanism 20
Is stored in any one of the cassettes C (step S1).

In this coating and developing system, a spinner type cleaning device, coating device and developing device are used for the scrubber cleaning unit (SCR) 28, resist coating unit (CT) 40 and developing unit (DEV) 52, respectively. Therefore, the present invention can be applied to these units (SCR), (CT), and (DEV).

An embodiment in which the present invention is applied to a scrubber cleaning unit (SCR) 28 will be described below with reference to FIGS.

FIGS. 3 to 7 show the configuration of the main part of a scrubber cleaning unit (SCR) 28 according to an embodiment of the present invention. The unit (SCR) 28 has a processing chamber 60 formed of a substantially hexahedral housing or casing, and a spinner type scrubber cleaning section 62 is provided at the center of the processing chamber 60.
Is provided.

The scrubber cleaning section 62 basically includes a cup 64 functioning as a processing container, a spin chuck mechanism 66 provided inside the cup 64, and a cup 64.
And a cleaning mechanism 120 provided so as to be capable of entering and exiting.

The spin chuck mechanism 66 includes a rectangular substrate G
Has a disk-shaped holding means, for example, a chuck plate 68, which can be placed and held substantially horizontally. As shown in FIGS. 4 and 5, on the upper surface of the chuck plate 68, means for supporting the substrate G, for example, a large number of support pins 70 are discretely fixedly mounted in an appropriate arrangement pattern. For holding the four corners at both side edges, for example, holding pins 72 are fixedly attached. Further, a plurality of through holes 76, for example, four through holes 76 are formed in the chuck plate 68 for allowing the substrate elevating means, e.g. The chuck plate 68 may be made of a rigid body such as stainless steel,
At least a portion of the O and the holding pin 72 that contacts the substrate G may be made of a material that does not damage the substrate, such as resin or rubber.

An upper end of a rotary support shaft 80 is fixed to the center of the back surface of the chuck plate 68, and a lower end of the rotary support shaft 80 is connected to a drive unit 82 of the spin chuck mechanism 66.
Operatively connected to a rotary drive motor (not shown) provided therein. By the rotation of the rotation drive motor, the chuck plate 68 and the substrate G mechanically held on the chuck plate 68 are integrally rotated at a set speed via the rotation support shaft 80. Drive unit 8
2 is fixed to the bottom of the casing 60.

In the driving section 82, driving means for raising and lowering the lift pins 74, for example, an air cylinder (not shown) is also provided. At the time of loading / unloading of the substrate G, the piston rod of the air cylinder advances (rises), so that each lift pin 74 rises to a predetermined height position set above the chuck plate 68 as shown in FIG. The transfer of the substrate G to and from the main transfer device 38 (FIG. 1) is performed. Under normal conditions, the piston rod of the air cylinder retreats to the home position, and each lift pin 74
Are retracted to a position below the chuck plate 68. The tip of the lift pin 74 may also be formed of a member that does not damage the substrate G.

The cup 64 is a vertically movable upper side wall 8 surrounding the chuck plate 68 and the substrate G.
4, a lower wall portion 86 opposed to the upper side wall portion 84 with a gap in the radial direction, and integrally formed with the lower side wall portion 86 and directly or at the bottom of the casing 60 by a spin chuck mechanism. And a bottom plate 88 fixed via a drive unit 66.

An upper side wall 84 of the cup 64 is supported outside or inside the cup 64 (inside the cup driving section 82).
In addition, a well-known cup supporting / elevating mechanism (not shown) capable of driving up / down to an arbitrary height within a set elevating range is provided. As shown in FIG. 4, when the substrate G is delivered,
In order to pass a transfer arm (not shown) of the main transfer device 38 inside the cup, the upper side wall portion 84 is lowered to the lowest set position. However, during the processing, as shown in FIGS. 6 and 7, the upper side wall portion 84 is raised (positioned) to a height suitable for receiving the droplet or the air current from the chuck plate 68 side.

In this embodiment, the upper side wall portion 84 of the cup 64 has a tapered portion 84a extending obliquely upward toward the radially inner side. The tapered portion 84a of the upper side wall portion 84 is located at the cup height position during processing (FIGS. 6 and 7).
In proximity to the side surfaces of the substrate G and the chuck plate 68,
Four sides (around) from the substrate G and the chuck plate 68 side
It functions to catch the liquid droplets scattered on the surface and drop it downward.

A waste liquid recovery chamber 90 is formed inside the cup lower wall 86 along the circumferential direction. The bottom surface of the waste liquid recovery chamber 90 has a height difference in the circumferential direction, and a drain port 92 is provided at the lowest part. The waste liquid port 92 communicates with a waste liquid tank (not shown) via a drain pipe 94.

The space above the waste liquid collecting chamber 90 serves not only as a waste liquid flow path but also as an exhaust flow path.
At the part inside the waste liquid recovery chamber 90
Is provided. The exhaust port 96 communicates with an external exhaust system such as an exhaust duct via an exhaust pipe 98.
Below the chuck plate 68, an umbrella-shaped partition plate 100 constituting a waste liquid and exhaust passage is provided.

The processing chamber 60 has a flat top plate 102. A circular opening 104 for taking in clean air is formed at the center of the top plate 102, that is, at a position directly above the chuck plate 68. The clean air E in the clean room is introduced into the processing chamber 60 through the opening 104, and is supplied to the substrate G on the chuck plate 68 in a down flow while spreading radially outward in a conical shape in the chamber.
The air E diffused in all directions from the substrate G is
The air is exhausted from an exhaust port 96 at the bottom of the cup to an external exhaust system through an exhaust flow path in the inside 4.

Each corner 108 formed between the top plate 102 of the processing chamber 60 and each of the two adjacent side walls 112 includes:
A triangular plate-shaped chamfered portion 110 for chamfering the space of the corner 108 is attached. As will be described later, the chamfered portions 110 at the four corners of the ceiling function to guide the airflow wound up above the cup 64 in the circumferential direction or downward along the side wall surface.

Of the four side walls 112 of the processing chamber 60, the side wall 112 facing the transport path 36 (FIG. 1) is provided with the processing chamber 6
An opening or opening / closing mechanism (not shown) is provided so that the transfer arm of the main transfer device 38 can enter and exit when the substrate G is loaded / unloaded at 0.

The bottom plate 114 of the processing chamber 60 has a cup 64
The exhaust port 116 is provided at one or a plurality of locations outside the device. Each exhaust port 116 communicates with an external exhaust system such as an exhaust duct (not shown) via an exhaust pipe 118.

The cleaning mechanism 12 in the scrubber cleaning section 62
0 is a brush scrubber mechanism 1 as shown in FIG.
22 and a cleaning nozzle mechanism 124. FIG. 6 shows both mechanisms 122 and 124 at the same time for convenience of explanation.
Normally, brushing cleaning by the brush scrubber mechanism 122 is performed first, and then spray cleaning by the cleaning nozzle mechanism 124 is performed. While one mechanism is operating, the other mechanism operates the cup 64. It is waiting outside at a predetermined waiting position (not shown) provided at a corner of the casing 60.

The brush scrubber mechanism 122 includes, for example,
A brush rotation drive unit 12 for rotating the plurality of disk brushes 126 while making contact with the surface of the substrate G at a constant pressure;
8 and the drive unit 128 is moved along the guide 130 to the substrate G
And a brush feed mechanism (not shown) for feeding in the long side direction.

The cleaning nozzle mechanism 124 includes, for example, a plurality of nozzles 132 for discharging the cleaning liquid from directly above the surface of the substrate G, and a cleaning liquid supply unit (not shown) for supplying the cleaning liquid to these nozzles 132. And a nozzle feed mechanism (not shown) for feeding the nozzle 132 along the guide 134 in the long side direction of the substrate G. The cleaning nozzle mechanism 1
At the time of the blow cleaning by 24, the spin chuck mechanism 66 is also operated, and the substrate G is rotated.

Next, the operation of the scrubber cleaning unit (SCR) 28 in this embodiment will be described.

When the main transfer device 38 of the cleaning process section 22 transfers the substrate G to this unit (SCR) 28,
In accordance with this timing, as shown in FIG. 4, the lift pins 74 move up to a predetermined height position, and receive the substrate G from the main transfer device 38. At this time, the upper side wall 8 of the cup 64
4 is lowered to the lowest position shown in FIG. 4, and the transfer arm of the main transfer device 38 can enter the cup 64.

Next, after the transfer arm of the main transfer device 38 retreats outside the cup 64, the lift pins 74 descend while holding the substrate G horizontally, and place the substrate G on the chuck plate 68. The substrate G is supported on the support pins 70 on the chuck plate 68 and is held by the holding pins 72. Next, the cup upper side wall portion 84 is raised to the height position of FIG. 6 or FIG.

After the loading of the substrate G is completed as described above, brushing cleaning by the brush scrubber mechanism 122 is started (FIG. 6). In this brushing cleaning, the disk brush 126 rotates while contacting the surface of the substrate G with a constant pressure, and moves from one end to the other on the substrate.
As a result, dirt is removed over the entire surface of the substrate.

At the time of this brushing cleaning, a cleaning liquid may be supplied to the disk brush 126. In that case, the cleaning liquid scatters from the brush 126 or the substrate G in all directions. The scattered cleaning liquid strikes the inner wall of the upper side wall portion 84 (particularly, the tapered portion 84a) of the cup 64, is collected in the waste liquid collecting chamber 93 at the bottom of the cup, and is discharged out of the cup 64 through the waste liquid port 106.

During brushing cleaning, the opening 1
The clean air E introduced from 04 into the processing chamber 60 is supplied to the brush scrubber mechanism 122 and the substrate G on the chuck plate 68 by a downflow while spreading radially outward in a conical shape. This down flow E facilitates the cleaning liquid splashing from the brush 126 and the substrate G in all directions and being collected in the waste liquid portion of the cup 64.

After the brushing cleaning is completed, blow cleaning is performed by the cleaning nozzle mechanism 124 this time. In this blow cleaning, the nozzle 132 reciprocates in the horizontal direction on the substrate while ejecting the high-pressure cleaning liquid of ultrasonic vibration toward the substrate G. On the other hand, the spin chuck mechanism 66 also operates to rotate the substrate G integrally with the chuck plate 68 at a predetermined rotation speed. As a result, the entire surface of the substrate G is blow-cleaned without leakage, and dirt that cannot be completely removed by the previous brushing cleaning is washed away.

During the blow cleaning, the opening 10
4, the clean air E introduced into the processing chamber 60 is supplied to the cleaning nozzle mechanism 124 and the substrate G on the chuck plate 68 in a downflow while spreading radially outward in a conical shape. This down flow E promotes the cleaning liquid scattered from the nozzle 132 and the substrate G in all directions and is collected in the waste liquid portion of the cup 64.

In the blow cleaning by the cleaning nozzle mechanism 124, a large amount of high-pressure cleaning liquid is supplied to the substrate G, and the substrate G spins, so that the cleaning liquid scattered from the substrate G in all directions is large and vibrant. However, the scattered cleaning liquid hits the inner wall of the cup upper side wall 84 in the same manner as described above, is collected in the waste liquid recovery chamber 90 at the bottom of the cup, and is discharged from the waste liquid port 92 to the outside of the cup 64.

On the other hand, during the blow cleaning, airflow and mist are generated around the substrate G and the chuck plate 68 due to the spin rotation. At this time, the air flow hits the inner wall of the cup upper side wall portion 84, particularly the inner side surface of the tapered portion 84a, and much of the mist or the like adhering to the wall surface is pushed down to the waste liquid or the exhaust passage below. At the same time, an airflow that rises while rotating along the tapered portion 84a is generated, and the mist and the like also rises while rotating along the rotation rising airflow, and the airflow and the mist rise above the cup 64 outside the downflow E. Etc. may roll up. However, since the spin rotation speed during the blow cleaning is relatively low, the curling of the airflow and mist is small.

When the blow cleaning by the cleaning nozzle mechanism 124 as described above is completed, as shown in FIG.
Spin drying is performed in a state where 20 is retracted out of the cup 64. In this spin drying, the spin chuck mechanism 6
6 rotates the substrate G at a higher rotation speed than during the blow cleaning for a certain period of time. By this high-speed rotation, the cleaning liquid adhering to the front surface or the back surface of the substrate G is shaken off by the centrifugal force, and the substrate G is dried in a short time.

In this spin drying, the mist and air current from the substrate G and the chuck plate 68 side are applied to the inner wall of the cup upper side wall portion 84 (particularly, the inner wall of the tapered portion 84a) with a larger pressure and wind pressure than during the blow cleaning. Hit. Here, the mist or the like scattered from the substrate G to the surroundings is much finer than at the time of blow cleaning.

When such an airflow and mist hit the inner wall of the cup (especially the inner wall of the tapered portion 84a) with a large wind pressure and pressure, not only the action of pushing the mist and the airflow along the inner wall of the cup to the bottom of the cup, but also the The effect of raising the airflow and mist along the inner wall also increases. Thus, the airflow J including the mist and the like rises from the inner wall of the cup upper side wall portion 84 while vigorously rotating, and rises high outside the airflow stable region ES of the downflow E. FIG. 7 shows the flow of the airflow J in the vertical direction, but the airflow J rotates in the same rotation direction as the substrate G in plan view as shown in FIG.

As described above, the airflow J that has rolled up outside the downflow E hits the inner surface of the top plate 102,
There, it is pressed radially outward and finally hits the plate surface of the chamfered portion 110 of the corner 108.
Then, since the chamfered portion 110 faces obliquely downward, the airflow J hitting it is guided (reflected) toward the adjacent side wall 112 and downward. Thus, the airflow J guided in the circumferential direction or downward by the chamfers 110 at the four corners of the ceiling
Does not return to the inside or the center side of the processing chamber 60, that is, the downflow airflow stable region ES
Without disturbing the processing chamber 6 outside the cup 64.
Then, the air flows to the bottom of the air outlet and is discharged from the exhaust port 116 to the outside of the room. Mist and the like contained in the airflow J also flow together with the airflow J and are discharged outside the room.

As described above, in the processing chamber 60, the airflow stable region ES of the downflow by the clean air is formed and maintained right above the substrate G, and the substrate G and the surrounding parts (particularly, the cup 64) are formed. Some of the mist generated from the inner wall) is discharged to the outside of the room via the exhaust passage in the cup 64, and the rest is wound up together with the airflow J outside the downflow E, and then is removed from the four corners of the ceiling. Chamfer 11
Guided or rectified in the circumferential direction or downward by 0,
Exhaust port 1 at the bottom of processing chamber 60 via the outside of cup 64
It is discharged from the room 16. This prevents mist and the like generated in the processing chamber 60, particularly mist and the like generated in the cup 64, from adhering or re-adhering to the substrate G. Further, since the mist and the like in the processing chamber 60 are discharged through the exhaust system without diffusing and flowing out of the room, the mist and the like can be prevented from adhering to other units and transport systems in the vicinity.

When the spin drying as described above is completed, as shown in FIG. 4, the lift pins 74 are raised to lift the substrate G from the spin plate 68 to a predetermined height position, and the cup upper side wall portion 84 is the lowest. Lowers to the set position.
There, the transfer arm of the main transfer device 38 enters, receives the substrate G from the lift pins 74, and outputs the unit (SC).
R) Take it out of 28. The surface of the unloaded substrate G is
Since the above scrubbing cleaning has been performed and mist and the like hardly adhere, the surface has a high cleanliness. Therefore, even in the resist coating process and the developing process in the next step, a processing result with less contamination and particles can be obtained, and as a result, an LC with a high yield can be obtained.
D is obtained.

FIGS. 8 and 9 show a modification of the scrubber cleaning unit (SCR) 28 in the above embodiment. Note that, in this modified example and other modified examples described later, the same reference numerals are used for portions having the same configurations and functions as the components of the above embodiment.

In the configuration examples shown in FIGS. 8 and 9, in addition to the above-described apparatus configuration, an inverted conical airflow guide plate 140 is provided near the opening 104 of the top plate 110 in the processing chamber 60. The conical bottom of the airflow guide plate 140 is opened, and the conical top is cut out to form an inner opening 142 having a diameter larger than the opening 104 of the top plate 102. Therefore, the downflowed clean air E introduced from the opening 104 of the top plate 102 is supplied by the downflow from the inner opening 142 toward the substrate G without being blocked by the airflow guide plate 140.

On the other hand, the airflow J which is wound up outside the downflow E from the cup 64 hits the slope 140 a of the airflow guide plate 140 just before the top plate 102, and a part of the slope 140 a.
0a while rotating the other part of this slope 140
The light is reflected by a, flows obliquely upward toward the outside in the radial direction, and finally reaches the chamfered portion 110 at the four corners of the ceiling and is guided in the circumferential direction or downward. Four corner chamfers 110
The airflow J guided in the circulating direction or downward is sent to the bottom of the processing chamber 60 along the inner side surface of the side wall 112 and discharged to the outside through the exhaust port 116. The mist and the like rolled up in the airflow J flow along the same course as the airflow J and are discharged outside the room.

As described above, the airflow guide plate 140 in this example of the configuration is such that the airflow J
To the outside in the radial direction, especially the chamfers 11 at the four corners.
Guide or rectify to zero.

In FIG. 9, a tunnel-shaped air passage may be provided inside the airflow guide plate 140 as indicated by a dashed line 144. Further, as shown in FIG. 9, the chamfered portion 110 for chamfering the space of each corner 108 may be constituted by a triangular pyramid-shaped block. Furthermore, although not shown,
A configuration in which a chamfer for airflow guidance may be provided at a corner of each side formed between the top plate 102 and each side wall 112 is also possible.

FIGS. 10 and 11 show another modification.

In the configuration example shown in FIG. 10, the processing chamber 150 has a side wall 152 formed in the shape of a square tube, and a dome-shaped ceiling connected to the upper end of each side wall 152 and having a circular opening 154 in the center. And a plate 156. Top plate 156 and each side wall 152
In the boundary between, the wall itself is formed as a curved surface, and the corner is chamfered (158).

Also in this configuration example, the opening 154 of the top plate 156
The clean air from the clean room introduced into the room is supplied to the substrate G in the cup 64 by a down flow. Also,
The airflow that has been wound up above the cup 64 due to the spin rotation of the substrate G is guided radially outward and downward while being pressed by the inner wall of the dome-shaped top plate 156 on the ceiling, and is guided along the chamfered portion 158. Then, it is sent to the bottom of the processing chamber 150 along the inner surface of each side wall 152. A mist or the like that is wound upward in the airflow from the cup 64 is also discharged from the bottom exhaust port 116 following the same course as the airflow. Therefore, it is possible to prevent mist and the like from adhering to the substrate G and from being undesirably diffused and flown out of the room.

In the configuration example of FIG. 11, the processing chamber 160 has a cylindrical side wall 162 and a dome-shaped top plate 166 connected to the upper end of the side wall 162 and having an opening 164 at the center.
The dome-shaped top plate 166 and the cylindrical side wall 162 are continuous on a curved surface.

Also in this configuration example, the opening 164 of the top plate 166
The clean air from the clean room introduced into the room is supplied to the substrate G in the cup 62 by a down flow. Also,
The airflow that has been wound up above the cup 64 due to the spin rotation of the substrate G is guided radially outward and downward while being pressed by the inner wall of the dome-shaped top plate 160 on the ceiling, and is directly held on each side wall 162. It is sent to the bottom of the processing chamber 160 along the way. A mist or the like that is wound upward in the airflow from the cup 62 follows the same course as the airflow and is discharged from the bottom exhaust port 116. Therefore, the substrate G such as a mist
And undesired diffusion and outflow outside the room.

The configuration of the scrubber cleaning section 62 can be variously modified. In particular, various modifications and selections can be made in the configuration or system of the spin chuck mechanism, the cup mechanism, the cleaning mechanism, and the like.

In the coating and developing system of the above embodiment, when the present invention is applied to the coating unit (CT) 40 or the developing unit (DEV) 56, basically, only the processing liquid supply mechanism is replaced. The basic configuration of the processing chamber, processing container, spin chuck mechanism, and the like is common to that of the scrubber cleaning unit (SCR) 28, and the same operation and effect as described above can be obtained.

The substrate processing apparatus of the present invention is not limited to a processing apparatus for coating and developing processing, but can be applied to any processing apparatus using a processing chamber, a processing container, and a spin chuck mechanism. Therefore, foreign matter other than the mist can be removed by the same operation as described above according to the content of the processing.
The substrate to be processed in the present invention is not limited to the LCD substrate, but may be a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed substrate, or the like.

[0084]

As described above, according to the substrate processing apparatus of the present invention, mist and / or foreign matter generated from the substrate or various parts around the substrate when the substrate to be processed is rotated during processing or before and after processing. The processing quality can be improved by effectively preventing or suppressing the adhesion to the substrate.

[Brief description of the drawings]

FIG. 1 is a plan view showing a configuration of a coating and developing processing system to which a substrate processing apparatus of the present invention can be applied.

FIG. 2 is a flowchart illustrating a procedure of processing in a coating and developing system according to an embodiment.

FIG. 3 is a perspective view schematically showing a configuration inside a scrubber cleaning unit of the embodiment.

FIG. 4 is a schematic cross-sectional view showing a configuration (at the time of loading and unloading a substrate) inside the scrubber cleaning unit of the embodiment.

FIG. 5 is a plan view showing a configuration of an upper surface of a chuck plate in the scrubber cleaning device of the embodiment.

FIG. 6 is a schematic cross-sectional view showing a configuration (at the time of cleaning) inside the scrubber cleaning unit of the embodiment.

FIG. 7 is a schematic cross-sectional view showing a configuration (at the time of spin drying) inside a scrubber cleaning unit of the embodiment.

FIG. 8 is a perspective view schematically illustrating a configuration of a modified example of the scrubber cleaning unit of the embodiment.

FIG. 9 is a schematic sectional view showing a modified example of the scrubber cleaning unit of the embodiment.

FIG. 10 is a partial schematic sectional view showing another modified example of the scrubber cleaning unit of the embodiment.

FIG. 11 is a partial schematic sectional view showing another modified example of the scrubber cleaning unit of the embodiment.

[Explanation of symbols]

 Reference Signs List 28 scrubber cleaning unit (SCR) 40 resist coating unit (CT) 52 developing unit (DEV) 60 processing chamber 62 scrubber cleaning device 64 cup (processing container) 66 spin chuck mechanism 68 chuck plate 82 driving unit 84 cup upper side wall 86 Cup lower side wall 92 Drainage port 98 Exhaust port 102 Top plate 104 Opening 110 Chamfered part 112 Side wall 116 Exhaust port 120 Cleaning mechanism 140 Air flow guide plate 150, 160 Processing chamber 156, 162 Top plate 152, 162 Side wall 154, 164 opening 158 chamfer

Claims (10)

[Claims] A rotating means for rotating the substrate together with the holding means in a substantially horizontal direction; a rotating means for holding the rotating substrate together with the holding means; An open processing vessel, a processing chamber in which the processing vessel is installed in the chamber, and an opening for introducing clean air into the chamber above the processing vessel; and a processing chamber in the processing chamber above the processing vessel. A substrate processing apparatus, comprising: a first airflow guide for guiding a rising airflow in a circumferential direction and / or downward. 2. The processing chamber includes: a side wall formed in a polygonal cylindrical shape; and a top plate connected to an upper end of the side wall and provided with the opening at a central portion, 2. The substrate processing apparatus according to claim 1, wherein the airflow guide unit includes a chamfered portion that chamfers a space at each corner formed between the top plate and the side wall. 3. 3. The processing chamber has a side wall formed in a polygonal cylindrical shape, and a top plate connected to an upper end of the side wall and provided with the opening at a central portion, 2. The substrate processing apparatus according to claim 1, wherein the airflow guide includes a chamfer that chamfers a space at a corner formed between the top plate and the side wall. 3. 4. The processing chamber has a side wall formed in a polygonal cylindrical shape, and a dome-shaped top plate connected to an upper end of the side wall and provided with the opening at a central portion, 2. The substrate processing apparatus according to claim 1, wherein the first airflow guide includes a chamfered portion that chamfers a space at a corner formed between the inner wall of the top plate and the side wall. 3. 5. The processing chamber has a side wall formed in a cylindrical shape, and a dome-shaped top plate connected to an upper end of the side wall and provided with the opening in a central portion, The airflow guide includes an inner wall of the top plate.
The substrate processing apparatus according to any one of the preceding claims. 6. The apparatus according to claim 1, further comprising a second airflow guide section for guiding an airflow rising above the processing vessel in the processing chamber obliquely upward toward a radially outer side. Substrate processing equipment. 7. The substrate processing apparatus according to claim 1, further comprising a processing liquid supply unit configured to supply a processing liquid to the substrate. 8. The substrate processing apparatus according to claim 7, wherein the processing container has a waste liquid port connected to an external waste liquid system at a bottom thereof. 9. The substrate processing apparatus according to claim 1, wherein the processing container has, at a bottom portion thereof, a first exhaust port connected to an external exhaust system. 10. The processing chamber according to claim 1, wherein the processing chamber has a second exhaust port connected to an external exhaust system at a lower portion of the bottom surface or the side wall outside the processing container. Substrate processing equipment.