JP2001156099A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JP2001156099A
JP2001156099A JP33955499A JP33955499A JP2001156099A JP 2001156099 A JP2001156099 A JP 2001156099A JP 33955499 A JP33955499 A JP 33955499A JP 33955499 A JP33955499 A JP 33955499A JP 2001156099 A JP2001156099 A JP 2001156099A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor chip
bonding
elastomer layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33955499A
Other languages
Japanese (ja)
Inventor
Koichiro Masuda
耕一郎 益田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui High Tec Inc
Original Assignee
Mitsui High Tec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui High Tec Inc filed Critical Mitsui High Tec Inc
Priority to JP33955499A priority Critical patent/JP2001156099A/en
Publication of JP2001156099A publication Critical patent/JP2001156099A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/85053—Bonding environment
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    • H01L2224/852—Applying energy for connecting
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-quality semiconductor device by preventing deformations of an elastomer layer and performing stable wire bonding. SOLUTION: When an electrode pad 21 and conductor leads 42 placed on the surface of an elastomer layer 30 are electrically connected to each other through a bonding wire 70, the elastomer layer 30 which is positioned near an area of ultrasonic bonding is temporarily cooled by a volatile coolant 80 containing liquefied nitrogen or ethanol in advance for performing the bonding operation while the elastomer layer 30 is hardened.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体チップ搭載
回路基板と半導体チップとの間にエラストマー系の絶縁
性接着剤層を設けた半導体装置の製造方法に関し、特
に、サーキット・インタイプの半導体チップ搭載回路基
板と半導体チップとの間に電気的導通回路を形成するワ
イヤボンディングに超音波接合法を用いた半導体装置の
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device in which an elastomeric insulating adhesive layer is provided between a semiconductor chip-mounted circuit board and a semiconductor chip, and more particularly to a circuit-in type semiconductor chip. The present invention relates to a method for manufacturing a semiconductor device using an ultrasonic bonding method for wire bonding for forming an electrical conduction circuit between a mounting circuit board and a semiconductor chip.

【０００２】[0002]

【従来の技術】従来、サーキット・インタイプのチップ
サイズパッケージ（ＣＳＰ）の半導体装置は、複数の電
極パッドを備えた半導体素子集積回路パターンが形成さ
れた半導体チップと、半導体チップ搭載回路基板とを絶
縁性接着剤層を介して積層することによって製造されて
いる。なお、半導体チップ搭載回路基板は、絶縁性テー
プ基板の一例であるポリイミドテープの外部実装基板面
側に外部接続端子の一例である半田ボールを設け、その
反対面の半導体チップ搭載面側に、一端部に外部接続端
子を接続し、他端部にワイヤボンディング領域を設けた
複数の導体リードを配列した導体リード層を備えてい
る。2. Description of the Related Art Conventionally, a semiconductor device of a circuit-in type chip size package (CSP) includes a semiconductor chip on which a semiconductor element integrated circuit pattern having a plurality of electrode pads is formed, and a semiconductor chip mounting circuit board. It is manufactured by laminating via an insulating adhesive layer. The semiconductor chip mounting circuit board is provided with solder balls as an example of external connection terminals on the external mounting board surface side of a polyimide tape as an example of an insulating tape substrate, and one end on the opposite side of the semiconductor chip mounting surface. And a conductor lead layer in which a plurality of conductor leads having a wire bonding area provided at the other end are arranged.

【０００３】このような構成の半導体装置は、熱膨張係
数の異なる種々の部材で構成されているので、導体リー
ド層と半導体チップとの間に介在する絶縁性接着剤層の
膨張収縮による応力や、実装時に半田ボール端子にかか
る熱膨張係数差に起因する熱応力が半導体チップに直接
又は間接的に作用する。そのため、半導体チップの反り
や破損の要因となっていた。そこで、外部実装基板、半
導体チップ搭載回路基板及び半導体チップの熱膨張係数
差に起因する熱応力を緩和するために、半導体チップ搭
載回路基板と半導体チップとの間に介在する絶縁性接着
剤層として、弾力性を有する、例えばアクリルゴム、シ
リコーンゴム、ニトリルゴム、ネオプレーンゴム、ポリ
サルファイドゴムなどをベースとしたエラストマー系の
絶縁性接着剤層（以下、エラストマー層という）が用い
られた、いわゆるコンプライアント構造の半導体装置が
提案されている。[0003] Since the semiconductor device having such a configuration is composed of various members having different thermal expansion coefficients, the stress and the stress caused by the expansion and contraction of the insulating adhesive layer interposed between the conductor lead layer and the semiconductor chip are reduced. In addition, thermal stress due to the difference in thermal expansion coefficient applied to the solder ball terminals during mounting acts directly or indirectly on the semiconductor chip. For this reason, it has been a factor of warpage and breakage of the semiconductor chip. Therefore, in order to alleviate the thermal stress caused by the thermal expansion coefficient difference between the external mounting board, the semiconductor chip mounting circuit board and the semiconductor chip, an insulating adhesive layer interposed between the semiconductor chip mounting circuit board and the semiconductor chip is used. A so-called compliant structure using an elastic insulating adhesive layer (hereinafter referred to as an elastomer layer) based on, for example, acrylic rubber, silicone rubber, nitrile rubber, neoprene rubber, polysulfide rubber, or the like, which has elasticity. Has been proposed.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、上記従
来の方法では、導体リード層が弾力性を有するエラスト
マー層の上に積層されているため、ボンディングワイヤ
を超音波振動子の先端で導体リードに押しつけると、エ
ラストマー層が弾力性を有しているため、超音波振動子
の押しつけ力によってエラストマー層が変形して局部的
に沈み込みが発生する。その結果、ボンディングワイヤ
と導体リードに十分な圧力が与えられず、ボンディング
が不完全になるという問題があった。本発明はこのよう
な事情に鑑みてなされたもので、ワイヤボンディング時
におけるエラストマー層の変形を防ぎ、安定したワイヤ
ボンディングを行って高い品質の半導体装置の製造方法
を提供することを目的とする。However, in the above-mentioned conventional method, since the conductor lead layer is laminated on the elastomer layer having elasticity, the bonding wire is pressed against the conductor lead by the tip of the ultrasonic vibrator. Then, since the elastomer layer has elasticity, the elastomer layer is deformed by the pressing force of the ultrasonic vibrator, and local sinking occurs. As a result, there has been a problem that sufficient pressure is not applied to the bonding wires and the conductor leads, resulting in incomplete bonding. The present invention has been made in view of such circumstances, and has as its object to provide a method of manufacturing a high-quality semiconductor device by preventing deformation of an elastomer layer during wire bonding and performing stable wire bonding.

【０００５】[0005]

【課題を解決するための手段】前記目的に沿う本発明に
係る半導体装置の製造方法は、表面に複数の電極パッド
を有する半導体チップと、絶縁性部材の半導体チップ搭
載面側にワイヤボンディング領域を有する複数の導体リ
ードからなる導体リード層を設けた半導体チップ搭載回
路基板と、これらを接合する電極パッドを露出する空間
部を有するエラストマー系の絶縁性接着剤層（エラスト
マー層）とを備え、ワイヤボンディング領域とそれぞれ
対応する電極パッドとの間を超音波接合法を用いて電気
的導通回路を形成するワイヤボンディングを行った後、
空間部に封止樹脂を充填する半導体装置の製造方法にお
いて、電気的導通回路を形成するワイヤボンディング
は、予め超音波接合法を行う領域の近傍に位置するエラ
ストマー層を液化窒素又はエタノールを含む揮発性の冷
媒で一時的に冷却し、エラストマー層を硬化した状態で
行う。According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a semiconductor chip having a plurality of electrode pads on a surface; and a wire bonding region on a side of the insulating member on which the semiconductor chip is mounted. A semiconductor chip-mounted circuit board provided with a conductor lead layer comprising a plurality of conductor leads, and an elastomeric insulative adhesive layer (elastomer layer) having a space exposing an electrode pad for joining them, After performing wire bonding to form an electrically conductive circuit between the bonding area and the corresponding electrode pad using an ultrasonic bonding method,
In the method of manufacturing a semiconductor device in which a space is filled with a sealing resin, wire bonding for forming an electrical conduction circuit is performed by previously evaporating an elastomer layer located in the vicinity of a region where an ultrasonic bonding method is to be performed, using liquid nitrogen or ethanol. This is performed in a state where the elastomer layer is hardened by temporary cooling with an aqueous refrigerant.

【０００６】これにより、エラストマー層が冷却されて
硬化した状態で、超音波接合法によりボンディングワイ
ヤが導体リード上に圧着されるので、ボンディングワイ
ヤを超音波振動子の先端で導体リードに押しつけたとき
に、導体リードの下のエラストマー層が変形して沈むこ
とがなく、ボンディングワイヤと導体リードに十分な圧
力が加えられ、完全なボンディングによって電極パッド
と導体リードが接続される。また、冷媒が液化窒素又は
エタノールのように揮発性の液体であるため、接続部分
近傍のエラストマー層表面に冷媒を滴下させるだけで接
続部分の下のエラストマー層を瞬時に冷却することがで
き、作業時間が短く、冷却後に揮発して残らず、しかも
気化した液化窒素又はエタノールも無害で、排気処理な
どの後処理が簡単である。なお、エラストマー層を、例
えばエポキシ系の樹脂で形成する場合、エラストマー層
が弾力性を維持する固相から弾力性を失う固相への相転
移点である０℃以下に冷却されることが好ましい。Thus, the bonding wire is pressed onto the conductor lead by the ultrasonic bonding method in a state where the elastomer layer is cooled and hardened, so that the bonding wire is pressed against the conductor lead by the tip of the ultrasonic vibrator. In addition, a sufficient pressure is applied to the bonding wire and the conductor lead without deforming and sinking the elastomer layer below the conductor lead, and the electrode pad and the conductor lead are connected by perfect bonding. In addition, since the refrigerant is a volatile liquid such as liquefied nitrogen or ethanol, the elastomer layer below the connection portion can be instantaneously cooled just by dropping the refrigerant on the surface of the elastomer layer near the connection portion, and the work can be performed. The time is short, it does not remain volatilized after cooling, and the vaporized liquefied nitrogen or ethanol is harmless, and post-treatment such as exhaust treatment is simple. When the elastomer layer is formed of, for example, an epoxy resin, the elastomer layer is preferably cooled to 0 ° C. or lower, which is a phase transition point from a solid phase maintaining elasticity to a solid phase losing elasticity. .

【０００７】ここで、本発明に係る半導体装置の製造方
法において、エラストマー層の冷却は揮発性の冷媒を入
れたシリジン先端のノズルから所定量吐出するディスペ
ンス法を用いてもよい。この場合、ディスペンス法で使
用するディスペンサー（薬剤自動供給装置）によってシ
リジン先端のノズルからの吐出量を調整することによ
り、冷媒の滴下量をエラストマー層の冷却領域を冷却す
るための最適値にすることが容易となる。Here, in the method of manufacturing a semiconductor device according to the present invention, the elastomer layer may be cooled by a dispense method in which a predetermined amount is discharged from a nozzle at the tip of the pyridine containing a volatile refrigerant. In this case, the dispenser used in the dispensing method (automatic medicine supply device) adjusts the discharge amount from the nozzle at the tip of the pyridine to make the drop amount of the refrigerant the optimum value for cooling the cooling area of the elastomer layer. Becomes easier.

【０００８】[0008]

【発明の実施の形態】続いて、添付した図面を参照しつ
つ、本発明を具体化した実施の形態につき説明し、本発
明の理解に供する。ここに、図１は本発明の一実施の形
態に係る半導体装置の製造方法によって製造される半導
体装置の側断面図、図２（Ａ）、（Ｂ）、（Ｃ）はそれ
ぞれ同半導体装置の接続部分の製造工程を示すＡ−Ａ側
断面図、Ｂ−Ｂ側断面図、正面図、図３は同半導体装置
のワイヤーボンディング工程後の状態を示す平面図、図
４は同半導体装置の変形例に係る半導体装置の側断面図
である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention. Here, FIG. 1 is a side sectional view of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention, and FIGS. 2A, 2B, and 2C respectively show the semiconductor device. AA side sectional view, BB side sectional view, front view showing a manufacturing process of a connection portion, FIG. 3 is a plan view showing a state of the semiconductor device after a wire bonding step, and FIG. 4 is a modification of the semiconductor device. FIG. 4 is a side sectional view of a semiconductor device according to an example.

【０００９】図１に示すように、本発明の一実施の形態
に係る半導体装置の製造方法によって製造するサーキッ
ト・インタイプの半導体装置１０は、センターパッドタ
イプのＣＳＰで構成され、表面の中央部に複数の電極パ
ッド２１を設けた半導体チップ２０を備え、半導体チッ
プ２０の表面に電極パッド２１を露出させたレジストカ
バー２２を形成している。半導体チップ２０の上には、
電極パッド２１が露出する空間部３１を有するエラスト
マー層３０を設けている。エラストマー層３０は、常温
では弾力性を備え、例えば０℃程度に冷却することによ
り硬度が高くなる、例えばアクリルゴム、シリコーンゴ
ムなどのゴム系樹脂やエポキシ樹脂などの樹脂材料が使
用されている。エラストマー層３０の表面側には、導体
リード層４１と絶縁層５０からなる半導体チップ搭載回
路基板４０が設けられている。導体リード層４１は複数
の導体リード４２からなり、絶縁性部材の一例であるポ
リイミド樹脂などの耐熱性樹脂によって形成された絶縁
層５０の半導体チップ搭載面側に積層されて、半導体チ
ップ搭載回路基板４０を形成している。絶縁層５０に
は、導体リード４２のワイヤボンディング領域となる接
続部４３を露出する接続用孔５１と半田用孔５２とを設
け、半田用孔５２には半田ボール６０を設けて導体リー
ド４２を外部回路パターンに導通するようにしている。
半導体チップ２０の電極パッド２１と導体リード４２と
はボンディングワイヤ７０を介して電気的に接続されて
いる。電極パッド２１とボンディングワイヤ７０を覆う
空間部３１と接続用孔５１には封止樹脂３３が充填され
ている。As shown in FIG. 1, a circuit-in type semiconductor device 10 manufactured by a method of manufacturing a semiconductor device according to an embodiment of the present invention is constituted by a center pad type CSP, A semiconductor chip 20 provided with a plurality of electrode pads 21, and a resist cover 22 exposing the electrode pads 21 on the surface of the semiconductor chip 20. On the semiconductor chip 20,
An elastomer layer 30 having a space 31 where the electrode pad 21 is exposed is provided. The elastomer layer 30 has elasticity at room temperature, and is made of a resin material such as a rubber-based resin such as acrylic rubber or silicone rubber or an epoxy resin which becomes harder when cooled to about 0 ° C., for example. On the front surface side of the elastomer layer 30, a semiconductor chip mounting circuit board 40 including a conductor lead layer 41 and an insulating layer 50 is provided. The conductor lead layer 41 is composed of a plurality of conductor leads 42 and is laminated on a semiconductor chip mounting surface side of an insulating layer 50 formed of a heat-resistant resin such as a polyimide resin which is an example of an insulating member. 40 are formed. The insulating layer 50 is provided with connection holes 51 and solder holes 52 for exposing the connection portions 43 serving as wire bonding regions of the conductor leads 42, and solder balls 60 are provided in the solder holes 52 to connect the conductor leads 42. Conduction is made to the external circuit pattern.
The electrode pads 21 of the semiconductor chip 20 and the conductor leads 42 are electrically connected via bonding wires 70. The space 31 covering the electrode pads 21 and the bonding wires 70 and the connection holes 51 are filled with a sealing resin 33.

【００１０】ここで、導体リード４２と電極パッド２１
とをワイヤボンディングによって接続する方法について
図２（Ａ）、（Ｂ）、（Ｃ）及び図３に基づいて説明す
る。 （１）予め、図３に示すように、窓枠状の枠体３２の内
側に樹脂を充填させて固め、複数個のエラストマー層３
０を形成する。 （２）一方、導体リード層４１の表面側に接続用孔５１
と半田用孔５２とを設けた絶縁層５０を接着し、半導体
チップ搭載回路基板４０を形成する。 （３）各エラストマー層３０の表面側に半導体チップ搭
載回路基板４０の導体リード層４１を接着する。 （４）図２（Ａ）に示すように、半導体チップ２０の表
面にレジストカバー２２を介してエラストマー層３０を
接着する。半導体チップ２０の表面側は電極パッド２１
を除き表面をレジストカバー２２によって覆われている
ので、電極パッド２１がエラストマー層３０の空間部３
１に露出する。Here, the conductor lead 42 and the electrode pad 21
2A, 2B, 2C and 3 will be described with reference to FIGS. (1) As shown in FIG. 3, a resin is filled in the inside of the window frame-shaped frame 32 in advance and solidified, and a plurality of elastomer layers 3 are formed.
0 is formed. (2) On the other hand, a connection hole 51 is formed on the surface side of the conductor lead layer 41.
Then, the insulating layer 50 provided with the solder holes 52 is bonded to form the semiconductor chip mounted circuit board 40. (3) The conductor lead layer 41 of the semiconductor chip mounted circuit board 40 is bonded to the front surface side of each elastomer layer 30. (4) As shown in FIG. 2A, the elastomer layer 30 is bonded to the surface of the semiconductor chip 20 via the resist cover 22. The surface side of the semiconductor chip 20 is an electrode pad 21
The surface of the electrode pad 21 is covered with the resist cover 22 except for the
Expose to 1.

【００１１】（５）この状態で、エラストマー層３０の
接続用孔５１の近傍に、ディスペンサー（薬剤自動供給
装置）によって注射器状のシリジン８１の先端のノズル
８２から冷媒８０として揮発性の液体である液化窒素又
はエタノールを所定量吐出・滴下するディスペンス法に
よりエラストマー層３０を一時的に冷却し、導体リード
４２のワイヤボンディング領域である接続部４３に隣接
するエラストマー層３０の接続用孔５１の近傍、即ち、
超音波接合法を行う領域の近傍に位置するエラストマー
層３０を硬化させる。エラストマー層３０を、例えばエ
ポキシ系の樹脂で形成した場合は、弾力性を維持する固
相から弾力性を失う固相への相転移点が０℃付近である
ため、冷却温度は０℃以下に冷却することが好ましい。 （６）図２（Ｂ）に示すように、エラストマー層３０を
硬化した状態にして、導体リード４２の接続部４３にボ
ンディングワイヤ７０の一方端部７１を置き、超音波振
動子９０を押しつけて超音波接合法によりボンディング
ワイヤ７０を導体リード４０上に圧着する。 （７）ボンディングワイヤ７０の他方端部７２は電極パ
ッド２１上に同様に超音波接合法により圧着する。 （８）図１に示すように、ボンディングワイヤ７０を接
続部４３と電極パッド２１に接続した後、半田ボール６
０を半田用孔５２内の導体リード４２に溶着させ、封止
樹脂３３により空間部３１と接続用孔５１を封止する。(5) In this state, a volatile liquid is used as the refrigerant 80 near the connection hole 51 of the elastomer layer 30 from the nozzle 82 at the tip of the syringe-like syringe 81 by a dispenser (automatic medicine supply device). The elastomer layer 30 is temporarily cooled by a dispense method of discharging and dropping a predetermined amount of liquefied nitrogen or ethanol, and the vicinity of the connection hole 51 of the elastomer layer 30 adjacent to the connection portion 43 which is the wire bonding region of the conductor lead 42, That is,
The elastomer layer 30 located near the region where the ultrasonic bonding is performed is cured. When the elastomer layer 30 is formed of, for example, an epoxy-based resin, the phase transition point from the solid phase maintaining elasticity to the solid phase losing elasticity is around 0 ° C., so that the cooling temperature is set to 0 ° C. or less. Cooling is preferred. (6) As shown in FIG. 2B, with the elastomer layer 30 in a cured state, the one end 71 of the bonding wire 70 is placed on the connection portion 43 of the conductor lead 42, and the ultrasonic vibrator 90 is pressed. The bonding wire 70 is crimped on the conductor lead 40 by an ultrasonic bonding method. (7) The other end 72 of the bonding wire 70 is similarly pressed onto the electrode pad 21 by an ultrasonic bonding method. (8) As shown in FIG. 1, after connecting the bonding wire 70 to the connection portion 43 and the electrode pad 21,
0 is welded to the conductor lead 42 in the solder hole 52, and the space 31 and the connection hole 51 are sealed with the sealing resin 33.

【００１２】これにより、エラストマー層３０が冷却さ
れて硬化した状態で超音波接合法によりボンディングワ
イヤ７０を導体リード４２上に圧着するので、ボンディ
ングワイヤ７０を超音波振動子９０の先端で導体リード
４２に押しつけたときに、エラストマー層３０が変形し
て沈むことがなく、ボンディングワイヤ７０に十分な圧
力が加えられ、完全なワイヤボンディングによって電極
パッド２１と導体リード４２が接続され、電気的導通回
路が形成される。この場合、ディスペンサーによってシ
リジン８１先端のノズル８２からの吐出する冷媒８０と
して使用した液化窒素又はエタノールは揮発性の液体で
あるため、冷媒８０を滴下するだけで接続部分のエラス
トマー層３０を瞬時に冷却することができ、ワイヤボン
ディング作業時間が短く、冷却後に気化した液化窒素又
はエタノールも無害で、取扱が簡単である。In this way, the bonding wire 70 is pressed onto the conductor lead 42 by the ultrasonic bonding method in a state where the elastomer layer 30 is cooled and hardened. When pressed against, the elastomer layer 30 is not deformed and sinks, a sufficient pressure is applied to the bonding wire 70, the electrode pad 21 and the conductor lead 42 are connected by complete wire bonding, and an electrical conduction circuit is formed. It is formed. In this case, liquefied nitrogen or ethanol used as the refrigerant 80 discharged from the nozzle 82 at the tip of the pyridine 81 by the dispenser is a volatile liquid, and thus the elastomer layer 30 at the connection portion is instantly cooled just by dropping the refrigerant 80. The wire bonding operation time is short, liquefied nitrogen or ethanol vaporized after cooling is harmless, and handling is simple.

【００１３】なお、図４に示すように、半導体装置１０
の変形例として半導体装置１００をサイドパッドタイプ
のＣＳＰとし、半導体チップ２００の周辺部に複数の電
極パッド２１０を配列して設け、中央部に半導体リード
４２０に接続する半田ボール６００を備えた半導体チッ
プ搭載回路基板４００を設け、導体リード４２０の接続
部４３０を半導体チップ搭載回路基板４００の周辺部に
露出させて電極パッド２１０に対応させてもよい。な
お、半導体チップ２００と、絶縁層５００に導体リード
層４１０を設けた半導体チップ搭載回路基板４００とを
エラストマー層３００を介して積層した構成は、前記半
導体装置１０の構成とほぼ同じである。また、エラスト
マー層３００を冷媒によって一時的に冷却し、導体リー
ド４２０のワイヤボンディング領域である接続部４３０
の近傍を硬化させ、超音波接合法によりボンディングワ
イヤ７００を導体リード４２０上に圧着する方法も半導
体装置１０の製造方法とほぼ同じである。Note that, as shown in FIG.
As a modification of the first embodiment, the semiconductor device 100 is a CSP of a side pad type, a plurality of electrode pads 210 are arranged in a peripheral portion of a semiconductor chip 200, and a semiconductor chip provided with a solder ball 600 connected to a semiconductor lead 420 in a central portion. The mounting circuit board 400 may be provided, and the connection portions 430 of the conductor leads 420 may be exposed to the periphery of the semiconductor chip mounting circuit board 400 so as to correspond to the electrode pads 210. Note that the configuration in which the semiconductor chip 200 and the semiconductor chip mounting circuit board 400 having the conductor lead layer 410 provided on the insulating layer 500 are laminated via the elastomer layer 300 is almost the same as the configuration of the semiconductor device 10. Further, the elastomer layer 300 is temporarily cooled by a cooling medium, and the connection portion 430 which is a wire bonding region of the conductor lead 420 is formed.
Is hardened and the bonding wire 700 is pressed onto the conductor lead 420 by an ultrasonic bonding method, which is almost the same as the method of manufacturing the semiconductor device 10.

【００１４】これにより、エラストマー層３００が冷却
されて硬化した状態で超音波接合法によりボンディング
ワイヤ７００を導体リード４２０上に圧着するので、ボ
ンディングワイヤ７００を超音波振動子の先端で導体リ
ード４２０に押しつけたときに、エラストマー層３００
が変形して沈むことがなく、ボンディングワイヤ７００
に十分な圧力が加えられ、完全なボンディングによって
電極パッド２１０と導体リード４２０が接続される。な
お、導体リード４２０を半導体チップ搭載回路基板４０
０の周辺部に露出させて電極パッド２１０に対応させて
いるので、隣り合う導体リード４２０の間隔を広くする
ことができ、冷却作業やワイヤボンディング作業が容易
となる。Thus, the bonding wire 700 is pressed onto the conductor lead 420 by the ultrasonic bonding method in a state where the elastomer layer 300 is cooled and hardened, so that the bonding wire 700 is attached to the conductor lead 420 by the tip of the ultrasonic vibrator. When pressed, the elastomer layer 300
Is not deformed and sinks, and the bonding wire 700
And the electrode pad 210 and the conductor lead 420 are connected by complete bonding. The conductor leads 420 are connected to the semiconductor chip mounting circuit board 40.
Since it is exposed to the peripheral portion of 0 and corresponds to the electrode pad 210, the interval between the adjacent conductor leads 420 can be widened, and the cooling operation and the wire bonding operation are facilitated.

【００１５】[0015]

【発明の効果】請求項１及び２記載の半導体装置の製造
方法においては、電気的導通回路を形成するワイヤボン
ディングは、予め超音波接合法を行う領域の近傍に位置
するエラストマー層を液化窒素又はエタノールを含む揮
発性の冷媒で一時的に冷却し、エラストマー層を硬化し
た状態で行うので、エラストマー層が硬化し、ボンディ
ングワイヤを超音波振動子の先端で導体リードに押しつ
けたときに、エラストマー層が変形して沈むことがな
く、ボンディングワイヤに十分な圧力が加えられる。そ
の結果、完全なボンディングによって電極パッドと導体
リードが接続され、安定したワイヤボンディングによっ
て品質の良い半導体装置を製造することができる。ま
た、液化窒素又はエタノールのように揮発性の液体で冷
却すると、接続部分を瞬時に冷却することができ、ボン
ディング作業時間が短く、冷却後に気化した液化窒素又
はエタノールも無害であり、排気処理などの後処理が簡
単で作業効率を高めることが可能である。In the method of manufacturing a semiconductor device according to the first and second aspects of the present invention, the wire bonding for forming the electrical conduction circuit may be performed by liquefied nitrogen or an elastomer layer located in advance in the vicinity of the region where the ultrasonic bonding is performed. Temporarily cooled with a volatile refrigerant containing ethanol, and performed in a state where the elastomer layer is cured, so that the elastomer layer is cured, and when the bonding wire is pressed against the conductor lead with the tip of the ultrasonic vibrator, the elastomer layer is cured. Is not deformed and sinks, and a sufficient pressure is applied to the bonding wire. As a result, the electrode pads and the conductor leads are connected by complete bonding, and a high-quality semiconductor device can be manufactured by stable wire bonding. Also, when cooling with a volatile liquid such as liquefied nitrogen or ethanol, the connection part can be cooled instantaneously, the bonding work time is short, liquefied nitrogen or ethanol vaporized after cooling is harmless, exhaust processing etc. Post-processing is simple and work efficiency can be increased.

【００１６】特に、請求項２記載の半導体装置の製造方
法においては、エラストマー層の冷却は揮発性の冷媒を
入れたシリジン先端のノズルから定量吐出するディスペ
ンス法を用いているので、冷媒の滴下量をエラストマー
層の冷却領域に最適な値にすることが容易となり、作業
工数を低減することが可能となる。In particular, in the method of manufacturing a semiconductor device according to the second aspect, since the cooling of the elastomer layer is performed by a dispense method in which a fixed amount of liquid is discharged from a nozzle at the tip of pyridine containing a volatile refrigerant, the amount of the refrigerant dropped is reduced. Can be easily adjusted to an optimum value for the cooling region of the elastomer layer, and the number of operation steps can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施の形態に係る半導体装置の製造
方法によって製造する半導体装置の側断面図である。FIG. 1 is a side sectional view of a semiconductor device manufactured by a method for manufacturing a semiconductor device according to an embodiment of the present invention.

【図２】（Ａ）、（Ｂ）、（Ｃ）はそれぞれ同半導体装
置の接続部分の製造工程を示すＡ−Ａ側断面図、Ｂ−Ｂ
側断面図、正面図である。FIGS. 2A, 2B, and 2C are cross-sectional views along the line AA, respectively, showing a manufacturing process of a connection portion of the semiconductor device, and FIGS.
It is a side sectional view and a front view.

【図３】同半導体装置のワイヤーボンディング工程後の
状態を示す平面図である。FIG. 3 is a plan view showing a state after a wire bonding step of the semiconductor device.

【図４】同半導体装置の変形例に係る半導体装置の側断
面図である。FIG. 4 is a side sectional view of a semiconductor device according to a modified example of the semiconductor device.

【符号の説明】[Explanation of symbols]

１０：半導体装置、２０：半導体チップ、２１：電極パ
ッド、２２：レジストカバー、３０：エラストマー層、
３１：空間部、３２：枠体、３３：封止樹脂、４０：半
導体チップ搭載回路基板、４１：導体リード層、４２：
導体リード、４３：接続部、５０：絶縁層、５１：接続
用孔、５２：半田用孔、６０：半田ボール、７０：ボン
ディングワイヤ、７１：一方端部、７２：他方端部、８
０：冷媒、８１：シリジン、８２：ノズル、９０：超音
波振動子、１００：半導体装置、２００：半導体チッ
プ、２１０：電極パッド、３００：エラストマー層、４
００：半導体チップ搭載回路基板、４１０：導体リード
層、４２０：導体リード、４３０：接続部、５００：絶
縁層、６００：半田ボール、７００：ボンディングワイ
ヤ10: semiconductor device, 20: semiconductor chip, 21: electrode pad, 22: resist cover, 30: elastomer layer,
31: space, 32: frame, 33: sealing resin, 40: semiconductor chip mounting circuit board, 41: conductor lead layer, 42:
Conductor lead, 43: connection portion, 50: insulating layer, 51: connection hole, 52: solder hole, 60: solder ball, 70: bonding wire, 71: one end, 72: other end, 8
0: refrigerant, 81: siridine, 82: nozzle, 90: ultrasonic transducer, 100: semiconductor device, 200: semiconductor chip, 210: electrode pad, 300: elastomer layer, 4
00: circuit board mounted with a semiconductor chip, 410: conductor lead layer, 420: conductor lead, 430: connection part, 500: insulating layer, 600: solder ball, 700: bonding wire

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 表面に複数の電極パッドを有する半導体
チップと、絶縁性部材の半導体チップ搭載面側にワイヤ
ボンディング領域を有する複数の導体リードからなる導
体リード層を設けた半導体チップ搭載回路基板と、これ
らを接合する前記電極パッドを露出する空間部を有する
エラストマー系の絶縁性接着剤層とを備え、前記ワイヤ
ボンディング領域とそれぞれ対応する前記電極パッドと
の間を超音波接合法を用いて電気的導通回路を形成する
ワイヤボンディングを行った後、前記空間部に封止樹脂
を充填する半導体装置の製造方法において、前記電気的
導通回路を形成するワイヤボンディングは、予め前記超
音波接合法を行う領域の近傍に位置する前記エラストマ
ー系の絶縁性接着剤層を液化窒素又はエタノールを含む
揮発性の冷媒で一時的に冷却し、前記エラストマー系の
絶縁性接着剤層を硬化した状態で行うことを特徴とする
半導体装置の製造方法。A semiconductor chip mounting circuit board provided with a semiconductor chip having a plurality of electrode pads on its surface, and a conductor lead layer comprising a plurality of conductor leads having a wire bonding region on the semiconductor chip mounting surface side of an insulating member. And an elastomeric insulating adhesive layer having a space exposing the electrode pad for joining them, and an electric connection is made between the wire bonding region and the corresponding electrode pad by using an ultrasonic bonding method. In the method for manufacturing a semiconductor device in which the space portion is filled with a sealing resin after performing wire bonding for forming an electrically conductive circuit, the ultrasonic bonding method is performed in advance for the wire bonding for forming the electrically conductive circuit. The elastomeric insulating adhesive layer located near the region is temporarily immersed in a volatile refrigerant containing liquefied nitrogen or ethanol. A method of manufacturing the semiconductor device, wherein the semiconductor device is cooled in a state where the elastomeric insulating adhesive layer is cured. 【請求項２】 請求項１記載の半導体装置の製造方法に
おいて、前記エラストマー系の絶縁性接着剤層の冷却は
前記揮発性の冷媒を入れたシリジン先端のノズルから所
定量吐出するディスペンス法を用いたことを特徴とする
半導体装置の製造方法。2. The method for manufacturing a semiconductor device according to claim 1, wherein the elastomeric insulating adhesive layer is cooled by a dispense method of discharging a predetermined amount from a nozzle at the tip of the pyridine containing the volatile refrigerant. A method of manufacturing a semiconductor device.
JP33955499A 1999-11-30 1999-11-30 Method of manufacturing semiconductor device Pending JP2001156099A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33955499A JP2001156099A (en) 1999-11-30 1999-11-30 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33955499A JP2001156099A (en) 1999-11-30 1999-11-30 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JP2001156099A true JP2001156099A (en) 2001-06-08

Family

ID=18328578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33955499A Pending JP2001156099A (en) 1999-11-30 1999-11-30 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2001156099A (en)

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