JP2001143896A - Plasma generator and method of operating it - Google Patents
Plasma generator and method of operating itInfo
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- JP2001143896A JP2001143896A JP32811699A JP32811699A JP2001143896A JP 2001143896 A JP2001143896 A JP 2001143896A JP 32811699 A JP32811699 A JP 32811699A JP 32811699 A JP32811699 A JP 32811699A JP 2001143896 A JP2001143896 A JP 2001143896A
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- plasma
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマを用いて
灰化、エッチング、薄膜形成を行うプラズマ処理装置に
係わり、特に酸素含有雰囲気中のプラズマにより生じる
活性酸素原子を利用して使用済みイオン交換樹脂の灰化
減容処理を行うプラズマ処理装置のプラズマ発生装置お
よびそのプラズマ電力制御方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing ashing, etching, and thin film formation using plasma, and more particularly to a used ion exchange using active oxygen atoms generated by plasma in an oxygen-containing atmosphere. The present invention relates to a plasma generating apparatus of a plasma processing apparatus for performing a resin ashing volume reduction process and a plasma power control method thereof.
【０００２】[0002]
【従来の技術】図２は、この種のプラズマ処理装置の一
例として特願平１０−２８４０６４号に記載の高周波誘
導コイルを利用したイオン交換樹脂の減容処理装置の構
成を模式的に示した断面図である。本減容処理装置は、
被処理用のイオン交換樹脂３を搭載した処理皿４を内蔵
する反応容器２、コイルの生じる電磁界を反応容器２の
内部に透過させるための絶縁性材料の石英よりなる平板
窓７、平板窓７の上部に巻装された高周波誘導コイル
８、高周波誘導コイル８に高周波電力を供給する高周波
電源１により構成され、反応容器２には、反応容器２の
内部を排気する図示しない減圧ポンプに接続される排気
口６、反応容器２の内部に酸素あるいは酸素を含む複数
のガスを導入するためのガス導入口５が備えられてい
る。また、イオン交換樹脂３を搭載した処理皿４は、移
動機構１０により鉛直方向に移動可能に組み込まれた移
動ステージ９の上に置載されており、被処理用のイオン
交換樹脂３を効果的な位置に配置して、効率的な灰化減
容処理が行えるよう構成されている。2. Description of the Related Art FIG. 2 schematically shows a configuration of an ion exchange resin volume reduction processing apparatus using a high-frequency induction coil described in Japanese Patent Application No. 10-284064 as an example of this type of plasma processing apparatus. It is sectional drawing. This volume reduction processing device
A reaction vessel 2 containing a processing dish 4 on which an ion exchange resin 3 to be treated is mounted, a flat window 7 made of quartz of an insulating material for transmitting an electromagnetic field generated by a coil into the inside of the reaction vessel 2, a flat window. 7, a high-frequency induction coil 8 wound around an upper portion of the fuel cell 7, and a high-frequency power supply 1 for supplying high-frequency power to the high-frequency induction coil 8; An exhaust port 6 is provided, and a gas introduction port 5 for introducing oxygen or a plurality of gases containing oxygen into the inside of the reaction vessel 2 is provided. Further, the processing dish 4 on which the ion-exchange resin 3 is mounted is placed on a moving stage 9 incorporated so as to be movable in a vertical direction by a moving mechanism 10 so that the ion-exchange resin 3 to be processed can be effectively removed. It is configured such that it can be disposed at an appropriate position to perform efficient incineration and volume reduction processing.
【０００３】本装置で発生されるプラズマ１２は、高周
波誘導コイル８に高周波電流を通電することにより電磁
誘導現象によって得られる誘導結合プラズマである。そ
の基本的な原理は金属などの誘導加熱と同一であり、電
磁誘導によりθ方向に生じる誘導電界によってプラズマ
中に渦電流を生じさせて加熱するものであり、無電極で
高密度のプラズマが得られるという特長を持つ。The plasma 12 generated by the apparatus is an inductively coupled plasma obtained by applying a high-frequency current to a high-frequency induction coil 8 and using an electromagnetic induction phenomenon. The basic principle is the same as that of induction heating of metals and the like, in which an eddy current is generated in the plasma by an induction electric field generated in the θ direction by electromagnetic induction and heating is performed. It has the feature that it can be done.
【０００４】酸素含有雰囲気において上記のごとくプラ
ズマ１２を発生させると、プラズマ１２中では、次式で
代表される過程により化学的活性の高い酸素原子や酸素
イオンが生成される。[0004] When the plasma 12 is generated in an oxygen-containing atmosphere as described above, highly chemically active oxygen atoms and oxygen ions are generated in the plasma 12 by a process represented by the following equation.
【０００５】[0005]
【化１】5 eV 以上の電子衝突； Ｏ2 ＋ｅ→Ｏ2 * ＋ｅ→Ｏ2 ＋ｅ＋ｈν→Ｏ＋Ｏ＋ｅ 12 eV 以上の電子衝突； Ｏ2 ＋ｅ→Ｏ2 * ＋ｅ→Ｏ2 + ＋２ｅ→Ｏ＋Ｏ+ ＋２ｅ これらの活性粒子は、イオン交換樹脂３や樹脂の分解ガ
スに直接作用して、アルキル基から水素を引き抜いた
り、Ｃ−Ｃ結合への割り込みや切断を経て炭化水素の酸
化を行う。その結果、イオン交換樹脂３は CO や CO2、
H2O へとガス化され減容される。また、イオン交換樹脂
３の交換基に吸着されていたコバルト等の金属イオンは
減容残さ中に酸化物として残留する。## STR1 ## 5 eV or more electron impact; O 2 + e → O 2 * + e → O 2 + e + hν → O + O + e 12 eV or more electron impact; O 2 + e → O 2 * + e → O 2 + + 2e → O + O + + 2e These The active particles directly act on the ion-exchange resin 3 or the decomposition gas of the resin to extract hydrogen from the alkyl group, or to oxidize hydrocarbons by interrupting or breaking CC bonds. As a result, the ion-exchange resin 3 contains CO, CO 2 ,
It is gasified to H 2 O and reduced in volume. In addition, metal ions such as cobalt adsorbed on the exchange groups of the ion exchange resin 3 remain as oxides in the volume reduction residue.
【０００６】[0006]
【発明が解決しようとする課題】上記の装置は、樹脂の
灰化処理に優れた性能を有しており、特に原子力設備か
らの廃棄物のイオン交換樹脂の減容処理に有効である。
本装置を用いて実際に樹脂を処理する際には樹脂の性状
に合わせた処理が必要となる。すなわち、例えば温度耐
性が大きくプラズマの加熱で熱分解しにくい樹脂の場合
には、プラズマ入力パワーを大きくして活性粒子数を増
し、処理効率を上げて不完全酸化物の生成を抑える必要
がある。一方、キレート材を多量に含む樹脂や温度耐性
の低い樹脂の場合には、プラズマ入力パワーを下げてプ
ラズマによる加熱を抑制し、熱分解ガスの大量発生を抑
えて、活性粒子不足による不完全酸化物の生成に起因す
るタール等の生成を効果的に低減させることが必要であ
り、樹脂が枯れ始め、熱分解ガスの放出量が低下するに
従ってプラズマ入力パワーを徐々に上げて処理される。
このように処理される樹脂の状況に応じてプラズマ入力
パワーを調整し、生成している活性粒子量に応じて熱分
解気化ガスの発生量を調整することによって気相におけ
る完全酸化が達成されることとなる。The above-described apparatus has excellent performance in ashing the resin, and is particularly effective in reducing the volume of the ion-exchange resin in the waste from nuclear facilities.
When the resin is actually treated using the present apparatus, the treatment corresponding to the properties of the resin is required. That is, for example, in the case of a resin having high temperature resistance and difficult to be thermally decomposed by heating plasma, it is necessary to increase the plasma input power to increase the number of active particles, increase the processing efficiency, and suppress the generation of incomplete oxides. . On the other hand, in the case of a resin containing a large amount of chelating material or a resin with low temperature resistance, the plasma input power is reduced to suppress heating by plasma, suppress the generation of a large amount of pyrolysis gas, and incomplete oxidation due to insufficient active particles. It is necessary to effectively reduce the generation of tars and the like due to the generation of substances, and the processing is performed by gradually increasing the plasma input power as the resin starts to wither and the amount of released pyrolysis gas decreases.
Complete oxidation in the gas phase is achieved by adjusting the plasma input power according to the situation of the resin to be treated in this way and adjusting the amount of generated pyrolysis gas in accordance with the amount of active particles being generated. It will be.
【０００７】プラズマ入力パワーが適正値に比して過大
になると、熱分解ガスが大量に発生し、反応容器２の内
壁にタールが付着する。反応容器２の壁面の温度は室温
程度と低く、プラズマによる活性酸素原子も届きにくい
ので、付着したタールは処理されないまま残留する。本
構成のプラズマ処理装置には、反応容器２の圧力を調整
するためのバルブや移動機構１０により鉛直方向に駆動
される移動ステージ９を備えており、これらの駆動部に
タールが付着すると所期の性能が保たれなくなるため、
付着したタールを適宜除去する必要がある。それゆえタ
ールが付着すると、このタールの除去作業のために装置
の稼動率が低下することとなる。特に原子力設備からの
放射能を帯びた樹脂の場合にはタールの除去作業自体が
困難である。したがって、このような事態を引き起こす
タールの付着を回避するために、被処理樹脂の性状に合
わせたプラズマ入力パワーの精密な制御が必要である。When the plasma input power becomes excessively large as compared with an appropriate value, a large amount of pyrolysis gas is generated, and tar adheres to the inner wall of the reaction vessel 2. The temperature of the wall surface of the reaction vessel 2 is as low as about room temperature, and active oxygen atoms due to plasma are difficult to reach, so that the attached tar remains without being treated. The plasma processing apparatus of this configuration includes a valve for adjusting the pressure of the reaction vessel 2 and a moving stage 9 driven in a vertical direction by a moving mechanism 10. Performance will not be maintained,
It is necessary to appropriately remove the attached tar. Therefore, if tar adheres, the operation rate of the apparatus will decrease due to the tar removal operation. Particularly, in the case of a resin having radioactivity from nuclear facilities, the tar removal operation itself is difficult. Therefore, it is necessary to precisely control the plasma input power in accordance with the properties of the resin to be processed in order to avoid the adhesion of tar which causes such a situation.
【０００８】一方、本構成のプラズマ処理装置において
生じるプラズマには、図３に発生原理を示したごとく高
周波誘導コイル８に流れる高周波電流により発生する誘
導電界Ｅ1 によるインダクティブな誘導結合プラズマ１
２のほかに、図４に発生原理を示したごとく高周波誘導
コイル８に印加される高周波電圧による静電界Ｅ2 によ
るキャパシティブな容量結合プラズマ１２が存在する。
このうち、容量結合主体のプラズマ（Ｅモードプラズ
マ）は一般にプラズマ密度が低い場合に発生し、誘導結
合主体のプラズマ（Ｈモードプラズマ）はプラズマ密度
の高い場合に発生する。ＥモードからＨモードへの遷移
はプラズマ密度に依存し、プラズマ密度がある値以上に
なるとプラズマへのパワーの供給が急激に増大する。こ
の現象は一般にモードジャンプと呼ばれている。図５
は、このモードジャンプの例を示す特性図で、高周波誘
導コイル８に通電する電流値がある点を超えるとプラズ
マ入力が急激に増大していることが判る。このジャンプ
を生じている電流値以下で生じているプラズマがＥモー
ドプラズマであり、この電流値より高い電流値で生じて
いるプラズマがＨモードプラズマである。On the other hand, as shown in FIG. 3, the plasma generated by the plasma processing apparatus of this configuration includes an inductive inductively coupled plasma 1 caused by an induction electric field E 1 generated by a high frequency current flowing through a high frequency induction coil 8.
2 In addition, capacitive capacitive coupled plasma 12 by the electrostatic field E 2 by the high frequency voltage applied to the high-frequency induction coil 8 as shown generation principle in FIG. 4 is present.
Of these, plasma mainly composed of capacitive coupling (E-mode plasma) is generally generated when the plasma density is low, and plasma mainly composed of inductive coupling (H-mode plasma) is generated when the plasma density is high. The transition from the E mode to the H mode depends on the plasma density. When the plasma density exceeds a certain value, the supply of power to the plasma increases rapidly. This phenomenon is generally called a mode jump. FIG.
Is a characteristic diagram showing an example of this mode jump. It can be seen that the plasma input sharply increases when the value of the current supplied to the high-frequency induction coil 8 exceeds a certain point. Plasma generated below the current value causing this jump is E-mode plasma, and plasma generated at a current value higher than this current value is H-mode plasma.
【０００９】既に述べたように、誘導プラズマにおける
モードジャンプはプラズマの発生メカニズムが異なるこ
とに起因する。Ｅモードプラズマ発生の等価回路は図６
に示した通りである。図において、 Lc はコイルのイン
ダクタンス、 Rc はコイルの抵抗、 Cw は窓部分の形成
するキャパシタンス、 Rp はプラズマの等価抵抗、Ｖは
電圧、Ｉはプラズマに流れる電流である。Ｅモードで
は、絶縁性材料の石英よりなる平板窓の部分がコンデン
サ Cw を形成し、インピーダンスＺc ＝１／（ωCw）と
なって、プラズマの等価抵抗 Rp に流れる電流Ｉを制限
する。このときプラズマに入力されるパワーは I2Rp で
あり、電流Ｉはコイルに印加される電圧Ｖによって決ま
るため（Ｉ＝Ｖ／ωLc）、プラズマ入力パワーはコイル
電圧Ｖに比例する。一方、Ｈモードプラズマ発生の等価
回路は、コイルのインダクタンス、コイルの抵抗、プラ
ズマの等価抵抗を、それぞれ Lc 、 Rc 、 Rp で表し、
プラズマに流れる電流によるインダクタンスを Lp で表
示すれば、図７に示した通りとなり、誘導コイルに通電
される電流値に依存してプラズマ入力パワーが供給され
ることがわかる。すなわち、Ｅモードの入力パワーはコ
イル電圧に依存し、Ｈモードの入力パワーはコイル電流
に依存する。しかしながら、このコイル電圧とコイル電
流をそれぞれ個別に制御することは不可能であるため、
モードジャンプが発生する。ＥモードからＨモードへの
遷移を防ぎ、ＥモードとＨモードの中間領域のプラズマ
パワーを得るためには、コイルに電流を通流しないで、
コイルと被処理物を載置するステージとの間に電圧を印
加するＥモードプラズマ専用の回路とする必要がある。
図８において、（ａ）は通常の整合回路、すなわちＨモ
ードプラズマ専用の回路の場合の系統図であり、（ｂ）
はＥモードプラズマ専用の回路に変更した場合の系統図
である。（ｂ）のごときＥモードプラズマ専用の回路に
おいては、原理的にＨモードへの遷移はあり得ず、印加
電圧によるリニアなパワー制御が可能である。しかしな
がら欠点として、印加電圧が過大になるためＨモード並
みのパワーを得ることは事実上困難であり、高密度／ハ
イパワーのプラズマの発生は不可能である。As described above, the mode jump in the induced plasma is caused by a different plasma generation mechanism. The equivalent circuit for E-mode plasma generation is shown in FIG.
As shown in FIG. In the figure, Lc is the inductance of the coil, Rc is the resistance of the coil, Cw is the capacitance formed by the window, Rp is the equivalent resistance of the plasma, V is the voltage, and I is the current flowing in the plasma. In the E mode, the portion of the flat window made of quartz as an insulating material forms a capacitor Cw, and the impedance Zc = 1 / (ωCw), thereby limiting the current I flowing through the equivalent resistance Rp of the plasma. At this time, the power input to the plasma is I 2 Rp, and the current I is determined by the voltage V applied to the coil (I = V / ωLc), so that the plasma input power is proportional to the coil voltage V. On the other hand, the equivalent circuit for H-mode plasma generation expresses the inductance of the coil, the resistance of the coil, and the equivalent resistance of the plasma as Lc, Rc, and Rp, respectively.
If the inductance due to the current flowing through the plasma is represented by Lp, it is as shown in FIG. 7, and it can be seen that the plasma input power is supplied depending on the value of the current supplied to the induction coil. That is, the input power in the E mode depends on the coil voltage, and the input power in the H mode depends on the coil current. However, since it is impossible to individually control the coil voltage and the coil current,
A mode jump occurs. In order to prevent the transition from the E mode to the H mode and obtain the plasma power in the intermediate region between the E mode and the H mode, no current flows through the coil,
It is necessary to provide a circuit dedicated to E-mode plasma for applying a voltage between the coil and the stage on which the object is placed.
8A is a system diagram in the case of a normal matching circuit, that is, a circuit dedicated to H-mode plasma, and FIG.
FIG. 4 is a system diagram when a circuit dedicated to E-mode plasma is changed. In a circuit dedicated to E-mode plasma as in (b), there is no transition to H-mode in principle, and linear power control by applied voltage is possible. However, as a drawback, it is practically difficult to obtain power equivalent to the H mode because the applied voltage becomes excessive, and it is impossible to generate high density / high power plasma.
【００１０】これを解決する方策として、プラズマ発生
原理の異なる複数のプラズマ発生装置、例えば、Ｅモー
ドプラズマ専用の回路を組み込んだ装置とＨモードプラ
ズマ専用の回路を組み込んだ装置を備え、処理プロセス
の段階に応じて使用する方式も考えられるが、設置スペ
ース並びにコストからみて実用に適さない。したがっ
て、前述のように本処理装置において樹脂を処理する際
には、タールの発生を抑えるために最適なプラズマ入力
パワーに制御する必要があるにもかかわらず、上記のよ
うにプラズマ入力にはモードジャンプが存在するがため
にプラズマ入力の制御が制限され、例えば図４に見られ
るごとく、ＥモードからＨモードに遷移する中程度のパ
ワー入力を得ることは事実上不可能となるという問題点
がある。As a measure for solving this problem, a plurality of plasma generators having different plasma generation principles, for example, an apparatus incorporating a circuit dedicated to E-mode plasma and an apparatus incorporating a circuit dedicated to H-mode plasma are provided. Although a method of using according to the stage is conceivable, it is not suitable for practical use in terms of installation space and cost. Therefore, as described above, when processing the resin in the present processing apparatus, it is necessary to control the plasma input power to an optimal level in order to suppress the generation of tar. The problem is that the control of the plasma input is limited due to the presence of the jump, and it is virtually impossible to obtain a moderate power input for transition from the E mode to the H mode as shown in FIG. is there.
【００１１】本発明は上記のごとき現状技術の問題点を
考慮してなされたもので、その目的は、処理される樹脂
の性状に合致したプラズマ入力パワーの精密な制御が可
能で、高稼動率での運転が可能な、コンパクトで低コス
トのプラズマ発生装置、ならびにそのプラズマ発生装置
の好適な運転方法を提供することにある。The present invention has been made in consideration of the problems of the state of the art as described above, and has as its object to enable precise control of the plasma input power in accordance with the properties of the resin to be treated, and a high operation rate. An object of the present invention is to provide a compact and low-cost plasma generator capable of operating at a low temperature, and a suitable operation method of the plasma generator.
【００１２】[0012]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明においては、被処理物を載置するステージ
を内部に収納する金属製の反応容器の器壁の一部に絶縁
性材料よりなる窓を設置し、この窓の外側に水冷可能な
平板状コイルよりなる高周波電極を配置し、高周波電極
に高周波電源を接続して反応容器の内部に低気圧プラズ
マを生じるプラズマ発生装置において、 （１）高周波電極とステージとの間に高周波電圧を印加
する回路と高周波電極に高周波電流を通流する回路が切
替え可能な整合回路を、高周波電源と高周波電極との間
に備えることとする。In order to achieve the above-mentioned object, according to the present invention, an insulating material is provided on a part of a vessel wall of a metal reaction vessel in which a stage for mounting an object to be processed is housed. A window made of a material is installed, a high-frequency electrode made of a water-coolable flat coil is arranged outside the window, and a high-frequency power source is connected to the high-frequency electrode to generate a low-pressure plasma inside the reaction vessel. (1) A matching circuit capable of switching between a circuit for applying a high-frequency voltage between the high-frequency electrode and the stage and a circuit for passing a high-frequency current to the high-frequency electrode is provided between the high-frequency power supply and the high-frequency electrode. .
【００１３】（２）さらに上記（１）の整合回路に、一
個の一次巻線と二個の二次巻線により構成された高周波
電力を負荷に応じて変圧／変流する整合トランスを備え
ることとする。 （３）また、上記（１）のごとく構成されたプラズマ発
生装置の運転方法として、被処理物の処理プロセスに必
要な電力に応じて前記の整合回路を切替えてプラズマ電
力を制御する運転方法を用いることとする。(2) The matching circuit of the above (1) further includes a matching transformer for transforming / transforming high frequency power constituted by one primary winding and two secondary windings according to a load. And (3) As an operation method of the plasma generator configured as described in (1) above, there is provided an operation method of controlling the plasma power by switching the matching circuit according to the power required for the process of processing an object to be processed. Shall be used.
【００１４】（４）さらに上記（３）のごとくプラズマ
電力を制御するために整合回路を切替える際に、例えば
高々１０秒間、高周波電源の出力を遮断することとす
る。 プラズマ発生装置の高周波電源と高周波電極との間に、
上記（１）のごとく切替え可能な整合回路を備えれば、
高周波電極とステージとの間に高周波電圧を印加する回
路を選択することによってＥモードプラズマに対応する
パワーを投入することが可能となる。このとき平板状コ
イルよりなる高周波電極には電流が通電されないので、
誘導による電磁界は発生せず、Ｈモードプラズマへの遷
移は起こらない。一方、整合回路を切替えて高周波電極
に高周波電流を通流する回路を選択すれば、Ｈモードプ
ラズマに対応するパワーが投入されることとなる。した
がって、Ｅモードプラズマへのパワー供給時にＥモード
プラズマ用の高周波電極とステージとの間に高周波電圧
を印加する回路に切替えておけば、Ｈモードに遷移する
プラズマ密度のしきい値に到達したとしても、コイルに
は電流が通電されないのでＨモードプラズマは発生せ
ず、急激なパワー注入、すなわちモードジャンプは起こ
らない。一方、処理プロセスの過程で、よりパワーを必
要とする処理ステップに移行した際には、Ｈモードプラ
ズマ用の高周波電極に高周波電流を通流する回路に切替
えることによって、プラズマ密度の高いＨモードプラズ
マが得られる。本構成とすれば、整合回路の切替えのみ
によってＥモードプラズマとＨモードプラズマが得られ
るので、コンパクト、低コストの装置で効果的にプラズ
マを発生させることができる。(4) Further, when the matching circuit is switched to control the plasma power as described in (3) above, the output of the high frequency power supply is cut off, for example, for at most 10 seconds. Between the high-frequency power supply and high-frequency electrode of the plasma generator,
By providing a switchable matching circuit as described in (1) above,
By selecting a circuit for applying a high-frequency voltage between the high-frequency electrode and the stage, power corresponding to the E-mode plasma can be supplied. At this time, no current flows through the high-frequency electrode composed of a flat coil,
No electromagnetic field is generated by induction, and no transition to H-mode plasma occurs. On the other hand, if the matching circuit is switched to select a circuit that allows a high-frequency current to flow through the high-frequency electrode, power corresponding to the H-mode plasma is applied. Therefore, if the circuit is switched to a circuit for applying a high-frequency voltage between the high-frequency electrode for E-mode plasma and the stage when power is supplied to the E-mode plasma, it is assumed that the plasma density threshold for transition to H-mode has been reached. However, since no current flows through the coil, no H-mode plasma is generated, and no rapid power injection, that is, no mode jump occurs. On the other hand, when the process shifts to a process step that requires more power in the course of the process, the circuit is switched to a circuit that passes a high-frequency current to the high-frequency electrode for the H-mode plasma, so that the H-mode plasma with a high plasma density is Is obtained. With this configuration, E-mode plasma and H-mode plasma can be obtained only by switching the matching circuit, so that a compact and low-cost apparatus can effectively generate plasma.
【００１５】さらに、上記の（２）のごとく構成すれ
ば、異なるインピーダンスを持つ二種類のプラズマに一
台の整合用トランスで対応できることとなるので、整合
回路系をコンパクトに構成することができ、プラズマ発
生装置のコンパクト化、低コスト化に特に有効である。
したがって、上記の（３）のごとくプラズマ発生装置を
運転すれば、ＥモードプラズマとＨモードプラズマがそ
れぞれ選択的に得られ、処理プロセスに対応して効果的
にプラズマを発生させることができる。特に、上記の
（４）のごとく、整合回路を切替える際に高周波電源の
出力を遮断すれば、高電圧／大電流での切替えが不要と
なるので回路スイッチの負荷が軽減し、スイッチのコス
トを下げることができる。また、この際の出力遮断時間
を１０秒以下とすれば、処理プロセス中のプロセス停止
時間が短く抑えられ、プラズマ処理プロセスに及ぼす影
響を小さくすることができる。Further, if the configuration is made as in the above (2), two types of plasmas having different impedances can be handled by one matching transformer, so that the matching circuit system can be made compact. This is particularly effective for reducing the size and cost of the plasma generator.
Therefore, by operating the plasma generator as described in (3) above, E-mode plasma and H-mode plasma can be selectively obtained, and plasma can be generated effectively corresponding to the processing process. In particular, if the output of the high-frequency power supply is cut off when the matching circuit is switched as in (4) above, switching at high voltage / large current is not required, so that the load on the circuit switch is reduced, and the cost of the switch is reduced. Can be lowered. Further, if the output cutoff time at this time is set to 10 seconds or less, the process stop time during the processing process can be shortened, and the influence on the plasma processing process can be reduced.
【００１６】[0016]
【発明の実施の形態】図１は、本発明のプラズマ発生装
置の実施例の電気系統の構成図である。本構成は、図８
に示した構成例を基に形成されたものであり、図８との
相違点は、高周波電源２０と負荷である高周波電極８お
よびプラズマ１２との間を接続する整合回路２３を切替
え可能に構成した点にある。FIG. 1 is a configuration diagram of an electric system of an embodiment of a plasma generator according to the present invention. This configuration is shown in FIG.
8 is different from FIG. 8 in that a matching circuit 23 connecting the high-frequency power supply 20 and the high-frequency electrode 8 as a load and the plasma 12 can be switched. It is in the point which did.
【００１７】すなわち、本実施例のプラズマ発生装置に
おいては、整合回路２３に、一個の一次巻線２４ａと二
個の二次巻線２４ｂ，２４ｃにより構成された高周波電
力を負荷に応じて変圧／変流する整合トランス２４が組
み込まれ、二次巻線２４ｂは、スイッチ２５，２６を介
して高周波誘導コイル８に高周波電流を通流する回路
に、もう一方の二次巻線２４ｃは、スイッチ２７，２８
を介して高周波誘導コイル８と反応容器２、したがって
被処理用の樹脂を載置したステージとの間に高周波電圧
を印加する回路に接続されている。That is, in the plasma generator of the present embodiment, the matching circuit 23 transforms the high-frequency power constituted by one primary winding 24a and two secondary windings 24b and 24c according to the load. A matching transformer 24 that changes the current is incorporated. The secondary winding 24b is connected to a circuit that passes high-frequency current to the high-frequency induction coil 8 via switches 25 and 26, and the other secondary winding 24c is connected to a switch 27. , 28
Is connected to a circuit for applying a high-frequency voltage between the high-frequency induction coil 8 and the reaction vessel 2, that is, the stage on which the resin to be processed is mounted.
【００１８】したがって、本整合回路２３において、ス
イッチ２５，２６を遮断し、スイッチ２７，２８を投入
すれば、高周波誘導コイル８とステージとの間に高周波
電圧が印加され、Ｅモードプラズマが得られることとな
る。また、スイッチ２７，２８を遮断し、スイッチ２
５，２６を投入すれば、高周波誘導コイル８に高周波電
流が流れて、Ｈモードプラズマが得られることとなる。
すなわち、スイッチ操作によりＥモードプラズマとＨモ
ードプラズマが切替えられ、それぞれ単独にパワーコン
トロールできることとなる。Therefore, in the present matching circuit 23, if the switches 25 and 26 are turned off and the switches 27 and 28 are turned on, a high-frequency voltage is applied between the high-frequency induction coil 8 and the stage, and E-mode plasma is obtained. It will be. Further, the switches 27 and 28 are shut off, and the switch 2
When 5 and 26 are supplied, a high-frequency current flows through the high-frequency induction coil 8, and H-mode plasma is obtained.
That is, the E-mode plasma and the H-mode plasma are switched by the switch operation, and the power can be independently controlled.
【００１９】なお、本構成において、スイッチ操作によ
りＥモードプラズマとＨモードプラズマを切替える際に
は高周波電源回路２０の出力を遮断する方法が採られて
おり、各スイッチは高電圧／大電流の切替えを行う必要
はない。また、切替え時の高周波電源回路２０の出力遮
断時間を約１０秒以内とすれば、プラズマ停止時間は短
時間に抑えられ、プラズマ処理に及ぼす影響を小さくす
ることができる。In this configuration, when switching between the E-mode plasma and the H-mode plasma by operating a switch, a method of shutting off the output of the high-frequency power supply circuit 20 is employed, and each switch switches between a high voltage and a large current. No need to do. Further, if the output cutoff time of the high-frequency power supply circuit 20 at the time of switching is within about 10 seconds, the plasma stop time can be suppressed to a short time, and the influence on the plasma processing can be reduced.
【００２０】[0020]
【発明の効果】上述のごとく、本発明によれば、 （１）プラズマ発生装置を請求項１あるいは２のごとく
構成することとしたので、複数台の発生装置を備えなく
ともＥモード〜Ｈモードの遷移によるプラズマ入力パワ
ーのジャンプ現象が回避されることとなり、被処理樹脂
の性状に合わせた制御が可能で、かつ、低コストでコン
パクトなプラズマ発生装置が得られることとなった。As described above, according to the present invention, (1) the plasma generator is configured as described in claim 1 or 2, so that the E mode to the H mode can be provided without a plurality of generators. The jump phenomenon of the plasma input power due to the transition is avoided, and a control can be performed according to the properties of the resin to be processed, and a low-cost and compact plasma generator can be obtained.
【００２１】（２）また、請求項１あるいは２のごとく
構成されたプラズマ発生装置を請求項３あるいは４ある
いは５のごとき運転方法によって運転することとしたの
で、低コストでコンパクトなプラズマ発生装置により、
効率的にプラズマを発生させて被処理用の樹脂を処理す
ることができることとなった。(2) Since the plasma generator constructed as in claim 1 or 2 is operated by the operation method as claimed in claim 3, 4 or 5, a low-cost and compact plasma generator is provided. ,
It has become possible to efficiently process plasma to process the resin to be processed.
【図１】本発明のプラズマ発生装置の実施例の電気系統
の基本構成を示す系統図FIG. 1 is a system diagram showing a basic configuration of an electric system of an embodiment of a plasma generator of the present invention.
【図２】特願平１０−２８４０６４号に記載の高周波誘
導コイルを利用したイオン交換樹脂の減容処理装置の構
成を模式的に示す断面図FIG. 2 is a cross-sectional view schematically showing a configuration of an ion exchange resin volume reduction processing apparatus using a high-frequency induction coil described in Japanese Patent Application No. 10-284064.
【図３】図２の処理装置における誘導結合プラズマ（Ｈ
モードプラズマ）の発生原理を示す模式図FIG. 3 shows an inductively coupled plasma (H) in the processing apparatus of FIG. 2;
Schematic diagram showing the principle of generation of mode plasma)
【図４】図２の処理装置における容量結合プラズマ（Ｅ
モードプラズマ）の発生原理を示す模式図FIG. 4 shows a capacitively coupled plasma (E) in the processing apparatus of FIG. 2;
Schematic diagram showing the principle of generation of mode plasma)
【図５】図２の処理装置におけるモードジャンプの例を
示す特性図FIG. 5 is a characteristic diagram showing an example of a mode jump in the processing device of FIG. 2;
【図６】図２の処理装置におけるＥモードプラズマ発生
の等価回路FIG. 6 is an equivalent circuit of E-mode plasma generation in the processing apparatus of FIG. 2;
【図７】図２の処理装置におけるＨモードプラズマ発生
の等価回路FIG. 7 is an equivalent circuit of H mode plasma generation in the processing apparatus of FIG. 2;
【図８】図２の処理装置の電気系統図で、（ａ）はＨモ
ードプラズマ専用の回路の場合の系統図、（ｂ）はＥモ
ードプラズマ専用の回路に変更した場合の系統図8 is an electric system diagram of the processing apparatus of FIG. 2, wherein (a) is a system diagram for a circuit dedicated to H-mode plasma, and (b) is a system diagram when changed to a circuit dedicated to E-mode plasma.
１ 高周波電源 ２ 反応容器 ３ イオン交換樹脂 ４ 処理皿 ５ ガス導入口 ６ 排気口 ７ 平板窓 ８ 高周波誘導コイル ９ 移動ステージ １０ 移動機構 １２ プラズマ ２０ 高周波電源回路 ２３ 整合回路 ２４ 整合トランス ２４ａ 一次巻線 ２４ｂ，２４ｃ 二次巻線 ２５，２６ スイッチ（Ｈモードプラズマ回路） ２７，２８ スイッチ（Ｅモードプラズマ回路） DESCRIPTION OF SYMBOLS 1 High frequency power supply 2 Reaction container 3 Ion exchange resin 4 Processing dish 5 Gas inlet 6 Exhaust port 7 Flat window 8 High frequency induction coil 9 Moving stage 10 Moving mechanism 12 Plasma 20 High frequency power circuit 23 Matching circuit 24 Matching transformer 24a Primary winding 24b , 24c Secondary winding 25, 26 Switch (H mode plasma circuit) 27, 28 Switch (E mode plasma circuit)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｇ２１Ｆ 9/30 ５５１ Ｇ２１Ｆ 9/30 ５５１Ａ ５７１ ５７１Ｚ Ｈ０１Ｌ 21/3065 Ｈ０１Ｌ 21/31 Ｃ 21/31 21/302 Ｂ Ｆターム(参考） 4G075 AA22 AA24 AA37 BA05 BA06 BC06 CA02 CA25 CA47 EB01 4K030 FA04 JA16 KA26 KA30 KA41 4K057 DA16 DD01 DM28 DM40 5F004 BA20 BB13 BC08 BD01 CA03 DA26 DB26 5F045 AA08 BB10 EH11 EH19 GB08──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) G21F 9/30 551 G21F 9/30 551A 571 571Z H01L 21/3065 H01L 21/31 C 21/31 21/302 BF term (reference) 4G075 AA22 AA24 AA37 BA05 BA06 BC06 CA02 CA25 CA47 EB01 4K030 FA04 JA16 KA26 KA30 KA41 4K057 DA16 DD01 DM28 DM40 5F004 BA20 BB13 BC08 BD01 CA03 DA26 DB26 5F045 AA08 BB10 E0811E
Claims (5)
する金属製の反応容器の器壁の一部に絶縁性材料よりな
る窓を設置し、該窓の外側に水冷可能な平板状コイルよ
りなる高周波電極を配置し、該高周波電極に高周波電源
を接続して反応容器の内部に低気圧プラズマを生じるプ
ラズマ発生装置において、 高周波電極と前記ステージとの間に高周波電圧を印加す
る回路と高周波電極に高周波電流を通流する回路が切替
え可能な整合回路が、高周波電源と高周波電極との間に
備えられていることを特徴とするプラズマ発生装置。1. A window made of an insulating material is provided on a part of a wall of a metal reaction vessel accommodating a stage for mounting an object to be processed, and a water-coolable flat plate is provided outside the window. In a plasma generator that arranges a high-frequency electrode composed of a coil, connects a high-frequency power supply to the high-frequency electrode, and generates low-pressure plasma inside the reaction vessel, a circuit that applies a high-frequency voltage between the high-frequency electrode and the stage. A plasma generator characterized in that a matching circuit capable of switching a circuit for flowing a high-frequency current to a high-frequency electrode is provided between a high-frequency power supply and the high-frequency electrode.
二次巻線により構成された高周波電力を負荷に応じて変
圧／変流する整合トランスが備えられていることを特徴
とする請求項１記載のプラズマ発生装置。2. The matching circuit according to claim 1, wherein said matching circuit includes a matching transformer for transforming / transforming high-frequency power formed by one primary winding and two secondary windings in accordance with a load. The plasma generator according to claim 1, wherein
する金属製の反応容器の器壁の一部に絶縁性材料よりな
る窓を設置し、該窓の外側に水冷可能な平板状コイルよ
りなる高周波電極を配置し、該高周波電極に高周波電源
を接続して反応容器の内部に低気圧プラズマを生じるプ
ラズマ発生装置で、高周波電極と前記ステージとの間に
高周波電圧を印加する回路と高周波電極に高周波電流を
通流する回路が切替え可能な整合回路を高周波電源と高
周波電極との間に備えたプラズマ発生装置の運転方法に
おいて、 被処理物の処理プロセスに必要な電力に応じて前記の整
合回路を切替えてプラズマ電力を制御することを特徴と
するプラズマ発生装置の運転方法。3. A window made of an insulating material is provided on a part of a wall of a metal reaction vessel accommodating a stage for mounting an object to be treated, and a water-coolable flat plate is provided outside the window. A high-frequency electrode consisting of a coil is arranged, a high-frequency power source is connected to the high-frequency electrode, and a plasma generator that generates low-pressure plasma inside the reaction vessel, and a circuit that applies a high-frequency voltage between the high-frequency electrode and the stage. In a method for operating a plasma generating apparatus provided with a matching circuit capable of switching a circuit for flowing a high-frequency current to a high-frequency electrode between a high-frequency power supply and a high-frequency electrode, the method according to the power required for a process of processing an object to be processed. And controlling the plasma power by switching the matching circuit.
路の切替えを行うことを特徴とする請求項３記載のプラ
ズマ発生装置の運転方法。4. The method according to claim 3, wherein the switching of the matching circuit is performed by interrupting the output of the high-frequency power supply.
前記遮断時間が１０秒以下であることを特徴とする請求
項４記載のプラズマ発生装置の運転方法。5. The method according to claim 4, wherein the cutoff time of the output of the high frequency power supply at the time of switching of the matching circuit is 10 seconds or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32811699A JP3852655B2 (en) | 1999-11-18 | 1999-11-18 | Plasma generator and operation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32811699A JP3852655B2 (en) | 1999-11-18 | 1999-11-18 | Plasma generator and operation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001143896A true JP2001143896A (en) | 2001-05-25 |
| JP3852655B2 JP3852655B2 (en) | 2006-12-06 |
Family
ID=18206677
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32811699A Expired - Fee Related JP3852655B2 (en) | 1999-11-18 | 1999-11-18 | Plasma generator and operation method thereof |
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| Country | Link |
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| JP (1) | JP3852655B2 (en) |
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