CN114256049B - Plasma processing apparatus and plasma generating method - Google Patents
Plasma processing apparatus and plasma generating method Download PDFInfo
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- CN114256049B CN114256049B CN202111079857.3A CN202111079857A CN114256049B CN 114256049 B CN114256049 B CN 114256049B CN 202111079857 A CN202111079857 A CN 202111079857A CN 114256049 B CN114256049 B CN 114256049B
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- 238000012545 processing Methods 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 96
- 239000002184 metal Substances 0.000 claims abstract description 96
- 230000008569 process Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 5
- 230000005684 electric field Effects 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000006698 induction Effects 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 14
- 239000007789 gas Substances 0.000 description 36
- 238000010586 diagram Methods 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 15
- 239000006227 byproduct Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 9
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- 239000010408 film Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a plasma processing apparatus and a plasma generating method capable of realizing cleaning in a processing container and suppressing component loss. The plasma processing apparatus includes: a processing container; a metal window dividing the interior of the process container into an upper antenna chamber and a lower process chamber, and having a plurality of partial windows; an inductively coupled antenna which is disposed above the metal window in the antenna chamber and is capable of generating inductively coupled plasma in the processing chamber; a lower electrode capable of placing a substrate in the processing chamber and applying high-frequency electric power for bias voltage; a capacitive element connected at one end to 1 or more of the partial windows and grounded at the other end; and a resistive element connected in parallel with the capacitive element at one end to 1 or more of the partial windows and grounded at the other end.
Description
Technical Field
The present invention relates to a plasma processing apparatus and a plasma generating method.
Background
For example, patent document 1 proposes a plasma processing apparatus having a metal window dividing the interior of a processing container into an upper antenna chamber and a lower processing chamber, and divided into a plurality of sections. A filter is connected to the metal window divided into a plurality of pieces.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication No. 2011-29584
Disclosure of Invention
Technical problem to be solved by the invention
When plasma is generated in an exhaust space in a plasma processing apparatus, byproducts are deposited on a wall surface of the exhaust space, and when the byproducts are detached from the wall surface and exhausted, particles that are recoil from a vacuum pump affect a substrate. Further, the substrate is also affected by the increase in particles due to the promotion of the loss of the material constituting the wall surface in the processing container. For the above reasons, defects (defects) may be generated on the substrate.
The present invention provides a technique capable of realizing cleaning in a processing container and suppressing component loss.
Means for solving the technical problems
According to one aspect of the present invention, there is provided a plasma processing apparatus including: a processing container; a metal window dividing the interior of the process container into an upper antenna chamber and a lower process chamber, and having a plurality of partial windows; an inductively coupled antenna which is disposed above the metal window in the antenna chamber and is capable of generating inductively coupled plasma in the processing chamber; a lower electrode capable of placing a substrate in the processing chamber and applying high-frequency electric power for bias voltage; a capacitive element connected at one end to 1 or more of the partial windows and grounded at the other end; and a resistive element connected in parallel with the capacitive element at one end to 1 or more of the partial windows and grounded at the other end.
Effects of the invention
According to an aspect of the present invention, cleaning and suppression of component loss in the process container can be achieved.
Drawings
Fig. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment.
Fig. 2 is a diagram showing an example of the impedance adjusting circuit according to the embodiment.
Fig. 3 is a diagram showing an example of a pattern of a plurality of partial windows formed in a metal window according to the embodiment.
Fig. 4 is a diagram showing an example of the capacitance and anode impedance of the impedance adjusting circuit according to the embodiment.
Fig. 5 is a diagram showing an example of the existence of the impedance adjusting circuit and the loss result of the component according to the embodiment.
Fig. 6 is a diagram showing another example of the presence or absence of the impedance adjusting circuit and the loss result of the component according to the embodiment.
Fig. 7 is a diagram showing another example of the presence or absence of the impedance adjusting circuit and the loss result of the component according to the embodiment.
Fig. 8 is a diagram showing another example of the presence or absence of the impedance adjusting circuit and the loss result of the component according to the embodiment.
Fig. 9 is a diagram showing an example of the presence or absence of the impedance adjusting circuit and the discharge result of the exhaust space according to the embodiment.
Fig. 10 is a diagram showing an example of the presence or absence of the impedance adjusting circuit and the number of defects on the substrate to be processed according to the embodiment.
Fig. 11 is a timing chart showing an example of the plasma generating method according to the embodiment.
Fig. 12 is a view showing an example of the result of plasma ignition by VUV light according to the embodiment.
Description of the reference numerals
1a processing container, 2a metal window, 3 an antenna chamber, 4a processing chamber, 6 an insulator, 13 a high-frequency antenna, 15 a first high-frequency power supply, 16 a power supply unit, 18 an impedance adjusting circuit, 20a processing gas supply unit, 23 a lower electrode, 29 a second high-frequency power supply, 30 an exhaust device, 32 a baffle plate, 34 VUV light source units, 60 a capacitor element, 61 a resistor element, a G processed substrate, and an ST mounting stage.
Detailed Description
The mode for carrying out the present invention will be described below with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference numerals, and overlapping description thereof may be omitted.
[ plasma processing apparatus ]
A plasma processing apparatus according to an embodiment will be described with reference to fig. 1 to 3. Fig. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment. Fig. 2 is a diagram showing an example of the impedance adjusting circuit according to the embodiment. Fig. 3 is a diagram showing an example of a pattern of a plurality of partial windows formed in a metal window according to the embodiment.
The plasma processing apparatus according to the embodiment is useful for etching a metal film, an ITO film, an oxide film, or the like when forming a thin film transistor on a glass substrate for an FPD (Flat Panel Display: flat panel display), and ashing treatment of a resist film, for example. Here, as the FPD, a Liquid Crystal Display (LCD), an electroluminescence (Electro Luminescence: EL) display, a Plasma Display Panel (PDP), and the like can be exemplified.
The plasma processing apparatus has a square-tube-shaped airtight processing container 1 made of a conductive material, for example, aluminum whose inner wall surface is anodized (aluminum oxide film processing). The process container 1 is grounded via a ground line 1 a. The processing vessel 1 is divided into an upper antenna chamber 3 and a lower processing chamber 4 by a metal window 2 formed in an insulating manner from the processing vessel 1. The metal window 2 in this case constitutes the top wall of the process chamber 4. The metal window 2 is made of, for example, a conductive metal as a nonmagnetic material. Examples of the conductive metal as the nonmagnetic material are aluminum and aluminum-containing alloys. The metal window 2 is supported on a side wall of the process container 1.
A gas supply pipe 20a is provided so as to communicate with the gas flow path 12. The gas flow path 12 is branched into a plurality of branch pipes (not shown), and is connected to partial windows (see fig. 3) of the metal window 2 divided into a plurality of pieces by the insulator 6 to supply gas to the respective partial windows. Each of the partial windows has a gas space (not shown) therein, and has a plurality of gas release ports on a surface facing the process chamber 4, and supplies gas into the process chamber 4 through the plurality of gas release holes. The gas supply pipe 20a penetrates from the ceiling wall of the process container 1 to the outside thereof, and is connected to a process gas supply unit 20 including a process gas supply source, a valve system, and the like. Therefore, in the plasma processing, the process gas supplied from the process gas supply unit 20 is released into the process chamber 4 through the gas supply pipe 20a.
In the antenna chamber 3, a high frequency (RF) antenna 13 is provided on the metal window 2 so as to face the metal window 2. The high-frequency antenna 13 is spaced from the metal window 2 by a spacer 17 made of an insulating material. The high-frequency antenna 13 constitutes a spiral antenna, and the metal window 2 is divided into, for example, 24 partial windows at the lower part of the spiral antenna. The high-frequency antenna 13 is disposed above the metal window 2 with a spacer 17 as an insulating member interposed therebetween in the antenna chamber 3, and is an example of an inductively coupled antenna capable of generating inductively coupled plasma in the processing chamber 4.
In the plasma processing, high-frequency electric power having a frequency of, for example, 1MHz to 27MHz for forming an induced electric field is supplied from the first high-frequency power supply 15 to the high-frequency antenna 13 via the matching unit 14 and the power supply member 16. The high-frequency antenna 13 of the present example is configured by an outer loop antenna, an intermediate loop antenna, and an inner loop antenna concentrically, and includes power feeding portions 41, 42, and 43 connected to the power feeding member 16, respectively, although not shown. The antenna wire extends from the power feeding portions 41, 42, 43 in the circumferential direction to form the 3-ring-shaped high-frequency antenna 13. A capacitor, not shown, is connected to the terminal of each antenna wire, and each antenna wire is connected to the side wall 3a of the high-frequency antenna 13 via the capacitor and grounded. The high-frequency antenna 13 to which the high-frequency electric power is supplied can form an induced electric field in the process chamber 4, and the process gas supplied into the process chamber 4 can be plasmatized by the induced electric field.
A stage ST for placing a substrate G to be processed, for example, a glass substrate, is provided below the processing chamber 4 so as to face the high-frequency antenna 13 through the metal window 2. The stage ST has a lower electrode 23 and an insulator frame 24. The lower electrode 23 is made of a conductive material, for example, aluminum whose surface is anodized. The substrate G to be processed placed on the lower electrode 23 can be held by suction by an electrostatic chuck, not shown.
The lower electrode 23 is housed in an insulator frame 24 and supported on the bottom surface of the process chamber 4. Further, a carry-in/out port 27a for carrying in and out the substrate G to be processed and a gate valve 27 for opening and closing the carry-in/out port 27a are provided on the side wall 4a of the processing chamber 4.
The lower electrode 23 is connected to a second high-frequency power supply 29 via a matching unit 28 by a power supply line 25a provided in the hollow pillar 25. The second high-frequency power supply 29 is used to apply high-frequency electric power for bias voltage, for example, high-frequency electric power having a frequency of 1MHz to 6MHz, to the lower electrode 23 during plasma processing. The lower electrode 23 can place the target substrate G on the placement surface, generate a bias voltage on the target substrate G by using high-frequency electric power for the bias voltage, and efficiently introduce ions in the plasma generated in the processing chamber 4 into the target substrate G.
In the lower electrode 23, a temperature control mechanism including a heating member such as a ceramic heater and/or a refrigerant flow path, and a temperature sensor (not shown) are provided for controlling the temperature of the substrate G. The piping and wiring for these mechanisms and components are led out of the process container 1 through the hollow support column 25.
A baffle plate 32 is provided between the stage ST and the side wall 4a of the processing chamber 4 so as to surround the stage ST continuously or intermittently, and is configured to allow the gas to flow from the processing chamber 4 to the exhaust space. An exhaust device 30 including a vacuum pump or the like is connected to the bottom of the processing chamber 4 via an exhaust pipe 31. The exhaust space under the baffle plate 32 can be exhausted by the exhaust device 30, and a predetermined vacuum atmosphere (for example, 1.33 Pa) can be set and maintained in the processing chamber 4 during plasma processing.
A fine cooling space (not shown) is formed on the back surface side of the substrate G to be processed placed on the lower electrode 23, and a He gas flow path 45 for supplying a He gas as a heat transfer gas of a constant pressure is provided. The He gas line 46 is connected to the He gas flow path 45, and is connected to the He source via a pressure control valve 47.
An observation window 33 is provided in a side wall 4a of the processing chamber 4, and a VUV light source unit 34 is mounted on the observation window 33. The VUV light source unit 34 can emit VUV (Vacuum Ultra Violet: vacuum ultraviolet) light having a wavelength of 100 to 200nm into the process chamber 4. When incident VUV light irradiates gas molecules in the process chamber 4, the gas molecules absorb light energy and emit electrons. The plasma ignition can be promoted by utilizing the emission of electrons.
Each constituent unit of the plasma processing apparatus is connected to and controlled by a control unit 50 constituted by a computer. A keyboard for inputting instructions and the like for the process manager to manage the plasma processing apparatus, and a user interface (user interface) 51 including a display for visualizing the operation state of the plasma processing apparatus are connected to the control unit 50. The control unit 50 is also connected to a storage unit 52. The memory unit 52 stores a control program for realizing various processes performed by the plasma processing apparatus under the control of the control unit 50, and a program for causing each constituent unit of the plasma processing apparatus to execute a process according to a process condition. The information may be stored in a hard disk or a semiconductor memory, or may be stored in a removable storage medium such as a CD-ROM or a DVD, and may be set at a predetermined position in the storage unit 52. The scheme may also be transferred from other means as appropriate, for example via dedicated lines. By retrieving an arbitrary recipe from the storage unit 52 in accordance with an instruction or the like from the user interface 51 and executing the recipe by the control unit 50, a desired process can be performed by the plasma processing apparatus under the control of the control unit 50.
[ impedance adjusting Circuit ]
The impedance adjusting circuit 18 is connected to the metal window 2. The impedance adjusting circuit 18 will be described with reference to fig. 2. Fig. 2 mainly shows a cross section of 1 partial window 22a out of 24 partial windows included in the metal window 2, and the impedance adjusting circuit 18 connected to the partial window 22a, and other structures of the plasma processing apparatus of fig. 1 are simplified.
Fig. 3 is a diagram obtained by omitting the impedance adjusting circuit 18 and only looking down the metal window 2. In the example of fig. 3, the metal window 2 is divided into 24 partial windows including 1 partial window 22 a. The 24 partial windows 22a, 22b, 22c … … are also collectively referred to as partial windows 22. The 24 partial windows 22 are portions obtained by dividing the metal window 2, and are placed with the insulator 6 interposed therebetween to constitute the metal window 2. In this example, when the wall surface of the processing chamber 4 facing the lower electrode 23 is rectangular, the wall surface is divided into an inner peripheral region 5a at the center of the rectangle, an annular intermediate region 5b surrounding the outer side of the inner peripheral region 5a, and an annular outer peripheral region 5c surrounding the outer side of the intermediate region 5 b. The inner peripheral region 5a has 4 partial windows 22 formed by dividing the rectangular inner peripheral region 5a substantially by diagonal lines. The intermediate region 5b has a total of 8 partial windows 22 divided in the radial direction so as to equally divide the sides 2 of the annular intermediate region 5 b. The outer peripheral region 5c has a total of 12 partial windows 22 divided in the radial direction so as to equally divide the sides 3 of the annular outer peripheral region 5c. Although not shown in the present embodiment, the inner loop antenna corresponds to the inner peripheral region 5a, the intermediate loop antenna corresponds to the intermediate region 5b, and the outer loop antenna corresponds to the outer peripheral region 5c.
According to this structure, the 24 partial windows 22 of the metal window 2 are placed with the insulator 6 interposed therebetween, so as to be insulated from the processing container 1, and the partial windows 22 are also insulated from each other. The material of the insulator 6 is, for example, ceramic or Polytetrafluoroethylene (PTFE).
Fig. 3 is an example of a pattern of a plurality of partial windows 22 formed in the metal window 2, and the pattern of the partial windows is not limited thereto. It is also possible that the metal window 2 is not divided. That is, the metal window 2 may have 1 or 2 or more partial windows 22.
Returning to fig. 2, the impedance adjusting circuit 18 is provided one-to-one for each partial window 22. However, the present invention is not limited to this, and one impedance adjusting circuit 18 may be provided for a plurality of partial windows 22. That is, the plurality of partial windows 22 may be divided into 1 or more areas, and each 1 or more areas may be connected to the impedance adjusting circuit. For example, in the example of fig. 3, the 24 partial windows 22 are divided into 3 areas, that is, an inner peripheral area 5a, an intermediate area 5b, and an outer peripheral area 5c, and 1 impedance adjusting circuit may be connected to each of the inner peripheral area 5a, the intermediate area 5b, and the outer peripheral area 5c. For example, by adjusting the impedance for each of the inner peripheral region 5a where the by-product is easily deposited and the intermediate region 5b and the outer peripheral region 5c where the by-product is less easily deposited, the entire surface of the metal window 2 can be cleaned uniformly. In addition, in the case where the impedance adjusting circuit 18 is provided for each of the partial windows 22, for example, in the case where the deposited state differs between the corners and the sides of the metal window 2, the impedance adjusting circuit 18 can be individually adjusted for each of the partial windows 22, and cleaning can be performed uniformly.
In the example of fig. 2 and 3, 1 impedance adjusting circuit 18 is provided for each of the 1 partial windows 22a, 22b, 22c … …. That is, in this example, 24 impedance adjusting circuits 18 are connected one-to-one to 24 partial windows 22. The impedance adjusting circuit is an r+c parallel circuit having a capacitive element 60 and a resistive element 61. In this example, 1 capacitive element 60 and 1 resistive element 61 connected in parallel with the capacitive element 60 are connected to each partial window 22. The capacitive element 60 is connected at one end to a portion of the window 22 and at the other end to ground. The resistive element 61 is connected to the partial window 22 at one end and grounded at the other end in parallel with the capacitive element 60.
The capacitive element 60 is a variable capacitive element. However, the capacitive element 60 may be a fixed capacitive element. By making the capacitance element 60 a variable capacitance element, the impedance of the metal window 2 (hereinafter, also referred to as anode impedance) as the anode electrode in the supply of the high-frequency electric power for bias voltage can be variably adjusted, and the impedance adjustment can be performed with higher accuracy. In the case where the impedance adjusting circuit 18 is provided for each of a plurality of areas, the capacitive element 60 may be connected to a plurality of partial windows 22 for each of the areas. Also, the resistive element 61 may be connected in parallel with the capacitive element 60 with the plurality of partial windows 22.
According to this configuration, in the supply of high-frequency electric power for bias voltage, the lower electrode 23 is set to be a cathode electrode, the metal window 2 is set to be an anode electrode which is a counter electrode facing the lower electrode 23, and the impedance adjusting circuit 18 adjusts the anode impedance. Thus, a desired potential difference is generated between the metal window 2 and the plasma by the capacitance of the capacitive element 60, and cleaning is performed to remove the deposit of the by-product adhering to the metal window 2 by sputtering with the plasma. In addition, when high-frequency electric power for bias voltage is supplied to the lower electrode 23, each component in the processing container 1 can function as an anode, but by making the metal window 2 function more positively as an anode to strengthen coupling with the lower electrode 23, which is a cathode electrode, loss of components in the processing container 1 due to sputtering of plasma can be suppressed.
When the potential difference in the metal window 2 is too large, not only by-products adhering to the metal window 2 can be removed, but also the metal window 2 is worn out, and when the potential difference is too small, removal of by-products adhering to the metal window 2 becomes insufficient. Therefore, it is important to adjust the capacitance of the capacitance element 60 within a range that can remove by-products adhering to the metal window 2 and can suppress excessive wear of the metal window 2 and other components in the processing container 1 at the time of cleaning. This can suppress particles, prolong the life of each component, and prolong the maintenance period.
[ impedance adjusting circuit: capacitor element
From the above, the inventors of the present invention have experimentally derived the capacitance range of the capacitive element 60 in order to simultaneously clean the metal window 2 to reduce particles and to suppress the loss of the components in the processing container 1 such as the metal window 2 during cleaning.
Fig. 4 is a diagram showing an example of the capacitance C and the impedance of the capacitive element 60 of the impedance adjusting circuit 18 according to the embodiment. The horizontal axis of fig. 4 represents the capacitance C [ pF ] of the capacitive element 60, and the vertical axis represents the anode impedance Z [ Ω ] of the metal window 2.
When the anode impedance Z of the metal window 2 becomes 0 or more, L-type (inductive) resonance may occur, and abnormal discharge may occur due to resonance. Therefore, the range of the capacitance of the capacitive element 60 is determined so that the C-property (capacitive property) of the anode impedance Z of the metal window 2 is ensured to be 0 or less. Specifically, the capacitance element 60 has a capacitance value such that the anode impedance Z generated by the capacitance element 60 and the resistance element 61 becomes a negative value.
The region I in FIG. 4 is a region where the capacitance C of the capacitor element 60 is 0 to 500pF and the anode impedance Z is-60deg.OMEGA or less. In the region I where the anode impedance Z is-60 Ω or less, there is a possibility that discharge occurs in the exhaust space on the lower side of the baffle plate 32. That is, there is a possibility that the parts of the processing container 1 constituting the exhaust space are sputtered by plasma to generate particles. On the other hand, since no appropriate potential difference is generated in the metal window 2, removal of the deposited material is not possible.
When the anode impedance Z is close to 0Ω, the loss of the components of the processing container 1 constituting the exhaust space can be suppressed, but the loss of the metal window 2 functioning as the upper electrode is promoted. That is, when the capacitance C is 6000pF or more, the loss of the components in the processing container 1 such as the metal window 2 cannot be completely suppressed, and therefore, the region and the region I are not used.
From the above, the capacitance C of the capacitive element 60 is preferably controlled in the range of 500 to 2000pF of the region II or in the range of 2000 to 6000pF of the region III. By adjusting the anode impedance Z by controlling the capacitance range of the capacitance element 60 to be within the range of the region II or the region III, the metal window 2 can be cleaned with high efficiency by sputtering with plasma. At the same time, the metal window 2, the inner wall of the processing container 1, and the members in the processing container 1 such as the baffle plate can be prevented from being worn out during cleaning.
In region III, the anode impedance Z is closer to 0 than in region II. The closer the anode impedance Z is to 0, the stronger the coupling (electrical coupling) between the metal window 2 and the lower electrode 23, and the higher the sputtering force of the metal window 2.
Accordingly, the capacitance of the capacitive element 60 can be independently adjusted for each region including the partial window 22 or the plurality of partial windows 22 according to the state of the by-product of the metal window 2. For example, in order to enhance the sputtering force of the metal window 2 in a certain portion of the window 22 and to improve the self-cleaning force, a range of the capacitance of the capacitive element 60 of the region III may be used. In the partial window 22 or region where both self-cleaning and component loss are important, the range of capacitance of the capacitive element 60 of region II is more preferably used.
[ impedance adjusting circuit: resistor element ]
The temperature of the metal window 2 can be adjusted by flowing an insulating temperature adjusting medium through a flow path formed in the metal window 2. When the insulating temperature control medium flows, frictional electrification occurs, and electric charges are accumulated in the metal window 2 to charge the metal window 2. Some of the electrons in the plasma may be accumulated in the metal window 2, and the metal window 2 may be charged. It is important not to cause the metal window 2 to accumulate uncontrolled charges. When the metal window 2 is charged, the plasma becomes unstable, and the process of the substrate G to be processed is affected. Therefore, in the impedance adjusting circuit 18, the resistive element 61 is connected to the metal window 2 in parallel with the capacitive element 60. This eliminates charge generated by uncontrolled charges in the metal window 2, thereby ensuring plasma stability.
[ loss of parts ]
Next, the results of experiments performed on the presence or absence of the impedance adjusting circuit 18 and the loss of the components will be described. Fig. 5 is a diagram showing an example of the existence of the impedance adjusting circuit 18 and the loss result of the component according to the embodiment. Fig. 5 (a) shows an example of the loss result of the component in the case of the comparative example in which the impedance adjusting circuit 18 is not provided in the metal window 2. Fig. 5 (b) is an example of the loss result of the component in the case where the impedance adjusting circuit 18 is provided.
As an example of the components in the processing container 1, in fig. 5 (a) and 5 (b), the amounts of wear on the substrate G to be processed, on the baffle plate 32, on the inner wall plate (side wall 4 a), and on the metal window 2 (lower surface) were measured. As a result, in the comparative example and the present embodiment, the amount of loss on the substrate G to be processed is unchanged. In the case where the impedance adjusting circuit 18 is provided on the baffle 32 and the inner wall plate (side wall 4 a), the loss amount is reduced as compared with the case where the impedance adjusting circuit 18 is not provided in the comparative example. On the other hand, the amount of wear (amount of cleaning of by-products) of the lower surface of the metal window 2 increases. As is clear from the above results, when the impedance adjusting circuit 18 is provided in the metal window 2, it is possible to clean the metal window 2 while suppressing the loss of the components in the processing container 1. This can suppress the generation of particles. In addition, the capacitance C of the capacitive element 60 is adjusted to such an extent that the metal window 2 itself is not worn with respect to the amount of wear of the lower surface of the metal window 2.
Fig. 6 to 8 are diagrams showing another example of the presence or absence of the impedance adjusting circuit 18 and the loss result of the component according to the embodiment. The chip samples were placed at each position, and the loss was measured. Fig. 6 (b) and (c) show the amounts of loss on the substrate G to be processed and on the shutter 32 at positions 1 to 12 of the processing space (on the shutter 32) in the processing chamber 4 shown in fig. 6 (a). N represents the loss amount of each component in the case where the impedance adjusting circuit 18 is not present, M, L represents the loss amount of each component in the case where the impedance adjusting circuit 18 is present, M represents the loss amount of each component in the case where the capacitance C of the capacitive element 60 is 800pF, and L represents the loss amount of each component in the case where the capacitance C of the capacitive element 60 is 1900 pF.
From this experiment, it is seen that the amount of wear on the processed substrate G is approximately the same regardless of the presence of the non-resistance adjusting circuit 18. That is, the presence or absence of the impedance adjusting circuit 18 does not affect the state on the substrate G to be processed. On the other hand, the loss amount in the damper 32 is suppressed in the case (M, L) where the impedance adjusting circuit 18 is present, as compared with the case (N) where the impedance adjusting circuit 18 is not present.
Fig. 7 b and c show the amounts of loss on the side wall 4a (inner wall) of the process chamber 4 and under the baffle plate 32 at positions 13 to 33 of the exhaust space (under the baffle plate 32) in the process chamber 4 shown in fig. 7 a. In addition, at a position where data is not shown, data cannot be acquired due to breakage of a sample or the like.
As is clear from the present experiment, the amount of loss in the inner wall (side wall 4 a) of the processing chamber 4 and the baffle plate 32 was suppressed in the case (M, L) where the impedance adjusting circuit 18 was present, as compared with the case (N) where the impedance adjusting circuit 18 was not present.
Fig. 8 (b) and (c) show the loss amounts at positions 49 to 66 on the lower surface of the metal window 2 shown in fig. 8 (a). As is clear from the present experiment, the amount of loss on the lower surface of the metal window 2 is greater in the case (M, L) where the impedance adjusting circuit 18 is present than in the case (N) where the impedance adjusting circuit 18 is not present.
As is clear from the above results, by adjusting the capacitance of the capacitance element 60 by the impedance adjusting circuit 18 according to the present embodiment, cleaning of the lower surface of the metal window 2 can be promoted, and loss of components in the processing container 1 can be suppressed.
When the capacitance C of the capacitor element 60 is reduced, the anode resistance increases, and it is difficult to couple the metal window 2 and the lower electrode 23, and it is difficult to remove by-products of the metal window 2. On the other hand, when the capacitance C of the capacitive element 60 is reduced, the inner wall of the processing chamber 4 and the parts in the processing container 1 such as the baffle plate 32 are easily coupled to the lower electrode 23, and the amount of loss of the inner wall and the baffle plate 32 increases.
When the capacitance C of the capacitor element 60 is increased, the anode impedance becomes low, and the coupling between the metal window 2 and the lower electrode 23 becomes easy, so that by-products of the metal window 2 can be easily removed. On the other hand, when the capacitance C of the capacitive element 60 is increased, it is difficult to couple the inner wall of the processing chamber 4, the member in the processing chamber 1 such as the baffle plate 32, and the lower electrode 23, and the loss amount of the inner wall and the baffle plate 32 becomes small.
Therefore, by adjusting the capacitance C of the capacitive element 60 in the range of the region II where the capacitance C of the capacitive element 60 is small and the region III where the capacitance C is large as shown in fig. 4, both the cleaning of the metal window 2 and the suppression of the component loss in the processing container 1 can be achieved. As a result, the generation of particles can be reduced.
Fig. 9 is a diagram showing an example of the presence or absence of the impedance adjusting circuit 18 and the discharge result of the exhaust space according to the embodiment. The exhaust space is a space under the baffle plate 32.
Fig. 9 (a) shows the stability of discharge in the exhaust space under the barrier 32 without the impedance adjusting circuit 18, and fig. 9 (b) shows the stability of discharge in the exhaust space with the impedance adjusting circuit 18. In FIGS. 9, (a) and (b) show the pressure of the process chamber 4, cl 2 Gas and BCl 3 The flow rate of the gas, and the power density of the high-frequency electric power of the bias voltage. The pressure of the treatment chamber 4 is controlled to 10mT (1.33 Pa) to 70mT (9.31 Pa). The case where discharge instability does not occur under the above-described processing conditions is indicated by the diagonal line of "OK", and the case where discharge instability occurs under the above-described processing conditions is indicated by the diagonal line of "NG". This enables the usable range of pressure and power density to be represented. However, the gas type is only an example and is not limited thereto. For example, in the case of etching a metal film such as aluminum, cl can be used 2 Gas and BCl 3 In the pair of SiO 2 In the case of etching a film, CF can be used 4 Gas and O 2 And (3) gas.
As a result of the experiment, in the case where the impedance adjusting circuit 18 is provided as shown in fig. 9 (b), the range of the processing conditions under which discharge instability does not occur in the exhaust space is wider than in the case where the impedance adjusting circuit 18 is not provided as shown in fig. 9 (a), and discharge instability in the exhaust space can be suppressed. This can suppress the generation of particles.
Fig. 10 is a diagram showing an example of the presence or absence of the impedance adjusting circuit 18 according to the embodiment and the number of defects on the processed substrate G after the processing. The defect number indicates the number of defects such as wire breakage generated in the processed substrate G.
Fig. 10 (a) shows the number of defects on the processed substrate G after the processing without the impedance adjusting circuit 18, and fig. 10 (b) shows the number of defects on the processed substrate G with the impedance adjusting circuit 18. As is clear from this, in the case of the impedance adjusting circuit 18 shown in fig. 10 (b), the number of defects can be significantly reduced as compared with the case of fig. 10 (a) in which the impedance adjusting circuit 18 is not present.
[ plasma generation method: plasma ignition
When the capacitance of the capacitive element 60 of the impedance adjusting circuit 18 is increased and the metal window 2 is adjusted to have a low impedance, the ignition of plasma may be deteriorated. Therefore, in order to promote plasma ignition, when plasma ignition is performed using the capacitive element 60 of the variable capacitive element, control is performed such that the capacitance of the capacitive element 60 is set to a value in the range of, for example, the region II, and the electric potential of the metal window 2 is increased by adjusting the metal window 2 to a high impedance. The capacitance of the capacitive element 60 may be increased to a value in the range of, for example, the region III after plasma ignition, and the metal window 2 may be adjusted to have a low impedance.
Specifically, the first capacitance value and the second capacitance value smaller than the first capacitance value are stored in the storage unit 52 in advance for the capacitance element 60. At the time of substrate processing, the control unit 50 may refer to the storage unit 52, adjust the capacitance element 60 to the second capacitance value when the high-frequency electric power for inducing the electric field is supplied to the high-frequency antenna 13, and adjust the capacitance element 60 to the first capacitance value after a predetermined time elapses, that is, after plasma ignition.
Instead of making all the capacitive elements 60 variable capacitive elements, only a specific partial window 22 or a specific partial window 22 in a specific region among the 24 partial windows 22 may be used, and a fixed capacitive element may be used for the partial window 22 in the other region. This can reduce the cost. A switch may be used to switch the circuit of the variable capacitance element and the circuit of the fixed capacitance element.
The ignition scheme may be prepared in advance and stored in the storage unit 52, and the ignition of the plasma may be promoted by controlling the pressure in the process chamber 4 by using the ignition scheme. Fig. 11 is a timing chart showing an example of a plasma generating method according to an embodiment performed based on an ignition scheme. The horizontal axis of fig. 11 shows a timing chart of time, power supply (high-frequency electric power for inducing electric field formation), bias (high-frequency electric power for bias voltage), and pressure. Step 1 is before plasma ignition, and step 2 is after plasma ignition (during processing).
In step 1 set in the ignition scheme, the control unit 50 controls the pressure in the process chamber 4 to 20mT (2.66 Pa). The control unit 50 starts at the start time t of step 2 0 The supply of power is started. The power supply is at time t 1 And (3) stability. At time t 1 The supply of bias is started. At the time t 2 And (3) stability. At the slave time t 1 Time t after a predetermined time has elapsed at which the bias stabilizes 2 The pressure in the process chamber 4 was reduced to 10mT (1.33 Pa).
In this way, by setting the pressure in the processing chamber 4 to be high in step 1 and then reducing the pressure in the processing chamber 4 when the bias is stable in step 2, plasma ignition can be performed more easily. In addition, when the power is applied without applying the bias, the pressure in the processing chamber may be adjusted to the second pressure value when the power is stabilized after a predetermined time elapses. Even when the power supply and the bias are applied, the pressure in the processing chamber 4 may be reduced at the time when the power supply is stabilized, in a case where the power supply is stabilized and the bias is stabilized later than the time when the power supply is stabilized.
[ VUV light ]
At the time of plasma ignition, VUV light may be irradiated from the VUV light source unit 34 into the process chamber 4 via the observation window 33 shown in fig. 1. Thereby, the gas molecules absorb the light energy of the VUV light and emit electrons. By the emission of electrons, plasma ignition can be promoted.
FIG. 12 is a graph showing the results of plasma ignition by irradiation with VUV light according to the embodimentDrawing of example. In fig. 12, the case where plasma is ignited by applying high-frequency electric power for forming an induced electric field of 1kW is shown. In fig. 12, Δ indicates a case where plasma is ignited by applying high-frequency electric power for forming an induced electric field of 2 kW. X in fig. 12 indicates a case where the plasma is not ignited. The pressure of the processing chamber 4 is set in a range of 5mT (0.665 Pa) to 90mT (11.9 Pa). In the case of irradiating VUV light (with VUV) to the plasma space, the gas species is O 2 All of the gases, i.e., the gas, ar gas, and He gas, promote plasma ignition as compared with the case where VUV light is not irradiated.
The plasma processing apparatus and the plasma generating method according to the present embodiment can achieve cleaning of the inside of the processing container and suppression of component loss.
The plasma processing apparatus and plasma generating method of the presently disclosed embodiments are to be considered in all respects as illustrative and not restrictive. The embodiments may be modified and improved in various ways without departing from the scope of the appended claims and their gist. The matters described in the above embodiments may be combined in a range not inconsistent with each other, and other configurations may be adopted.
Claims (10)
1. A plasma processing apparatus, comprising:
a processing container;
a metal window dividing the interior of the process container into an upper antenna chamber and a lower process chamber, and having a plurality of partial windows;
an inductively coupled antenna which is disposed above the metal window in the antenna chamber and is capable of generating inductively coupled plasma in the processing chamber;
a lower electrode capable of placing a substrate in the processing chamber and applying high-frequency electric power for bias voltage;
a capacitive element connected at one end to 1 or more of the partial windows and grounded at the other end; and
a resistive element connected in parallel with the capacitive element at one end to 1 or more of the partial windows and grounded at the other end.
2. The plasma processing apparatus according to claim 1, wherein:
the plurality of partial windows are divided into 1 or more regions, and are connected with the capacitive element and the resistive element at each of the divided regions.
3. The plasma processing apparatus according to claim 1 or 2, wherein:
the capacitive element is a variable capacitive element.
4. The plasma processing apparatus according to claim 1 or 2, wherein:
the capacitive element is a fixed capacitive element.
5. The plasma processing apparatus according to any one of claims 1 to 4, wherein:
the capacitive element has a capacitance value such that an impedance generated by the capacitive element and the resistive element becomes a negative value.
6. The plasma processing apparatus according to any one of claims 1 to 5, wherein:
the capacitor element has a capacitance value such that the impedance of the metal window is-60 Ω or more.
7. The plasma processing apparatus according to claim 6, wherein:
the capacitor element has a capacitance value such that the impedance of the metal window is-15Ω or less.
8. A plasma generation method performed by a plasma processing apparatus, the plasma processing apparatus comprising: a processing container; a metal window dividing the interior of the process container into an upper antenna chamber and a lower process chamber, and having a plurality of partial windows; an inductively coupled antenna which is disposed above the metal window in the antenna chamber and is capable of generating inductively coupled plasma in the processing chamber; a lower electrode capable of placing a substrate in the processing chamber and applying high-frequency electric power for bias voltage; a capacitive element connected at one end to 1 or more of the partial windows and grounded at the other end; and a resistive element connected in parallel with the capacitive element at one end to 1 or more of the partial windows and grounded at the other end, the plasma generating method comprising:
a step of adjusting the pressure in the processing chamber to a first pressure value by referring to a storage unit in which the first pressure value and a second pressure value lower than the first pressure value are stored in advance for the pressure in the processing chamber; and
and a step of applying high-frequency electric power for forming an induced electric field to the inductively coupled antenna, and adjusting the pressure in the processing chamber to the second pressure value after a predetermined time elapses.
9. The plasma generation method according to claim 8, comprising:
and a step of applying high-frequency electric power for bias voltage to the lower electrode, and adjusting the pressure in the processing chamber to the second pressure value after a predetermined time elapses from a later application time of the high-frequency electric power for forming the induced electric field to the application time of the high-frequency electric power for bias voltage.
10. The plasma generation method according to claim 8, wherein:
the storage unit that stores a first capacitance value and a second capacitance value smaller than the first capacitance value in advance for the capacitive element is referred to, the capacitive element is adjusted to the second capacitance value when the high-frequency electric power for forming the induction electric field is applied, and the capacitive element is adjusted to the first capacitance value after a predetermined time elapses.
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| JP2020159058A JP7446190B2 (en) | 2020-09-23 | 2020-09-23 | Plasma processing equipment and plasma generation method |
| JP2020-159058 | 2020-09-23 |
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- 2021-09-10 KR KR1020210120789A patent/KR20220040386A/en not_active Application Discontinuation
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| JP2022052589A (en) | 2022-04-04 |
| CN114256049A (en) | 2022-03-29 |
| JP7446190B2 (en) | 2024-03-08 |
| TW202231132A (en) | 2022-08-01 |
| KR20220040386A (en) | 2022-03-30 |
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