JP2001143644A - Functional film having electrode and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a functional film having an electrode that may be connected with a conductive layer with high reliability and stable quality hardly changing the quality with time and that provide easy automated manufacturing facility and a method of fabricating it at low cost. SOLUTION: Sequentially formed over a substrate 20 are a conductive layer 12 and a low conductive layer 13 having a lower conductivity than the layer 12. The method comprises a step of subjecting the surface of the conductive layer 12 to corona discharge, a step of lowering a vacuum chamber 60 to contact its opening portion 65 with the surface of the low conductive layer 13, a step of evacuating the vacuum chamber 60 by opening the exhaust valve 61 to a prescribed vacuum state, and a step of introducing a sputtering gas into the vacuum chamber 60 by opening a gas inlet valve 63 to sputter an electrode film 14 on the surface of the low conductive layer 13. The electrode film 14 is connected through the low conductive layer 13 to the conductive layer 12.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a CRT (Ca
The present invention relates to a functional film with an electrode used as an electromagnetic wave shielding film in a cathode-ray tube;

[0002]

2. Description of the Related Art Television receivers and OA (Office Aut)
A CRT is used as an image display device such as a display of a device. However, since the CRT emits electromagnetic waves from a display surface, it is likely that dust adheres to the display surface or that a peripheral electronic device easily malfunctions. There's a problem. For this reason, conventionally, in a CRT, an ARAS (Anti-Reflection) is provided on a display surface in order to prevent emission of electromagnetic waves.
Anti-Static; Electromagnetic wave shield with anti-reflection function
A film is formed. The ARAS film includes a conductive layer formed of a conductive material, and this conductive layer is grounded (connected to earth) via a CRT housing to shield emission of electromagnetic waves from the display surface. be able to. The ARAS film includes an anti-reflection layer in addition to the conductive layer, and prevents reflection of light on the display surface so that the screen can be easily viewed.

By the way, in order to provide an anti-reflection function in such an ARAS film, it is necessary to form a low-refractive-index film such as SiO ₂ (silicon dioxide) on the uppermost layer due to restrictions on film design. However, in the ARAS film in which the SiO ₂ film is formed on the uppermost layer, it is structurally difficult to ground the intermediate conductive layer via the CRT housing, and the ground connection cannot be reliably performed. There was a problem. Conventionally, as a method for solving such a problem, an electrode (ground terminal) made of solder is formed on the uppermost layer (non-conductive layer) of the ARAS film as disclosed in Japanese Patent Application Laid-Open No. Hei 6-160601. Then, there is a method of grounding through this electrode. Hereinafter, the method will be specifically described.

FIG. 17 shows a cross-sectional structure of an ARAS film 100 in which the uppermost layer is formed of an insulating material. This A
The RAS film 100 is formed on a substrate 110 (glass material) on the CRT display surface, and a transparent layer 103, a conductive layer 102, and a non-conductive layer 101 are formed in this order from the substrate 110 side. The transparent layer 103 and the non-conductive layer 101 are each formed of SiO ₂ (silicon dioxide). The conductive layer 102 is made of ITO (Indium T) having an electromagnetic wave shielding function.
in Oxide (indium oxide thin film). By melting the solder on the non-conductive layer 101 of the ARAS film 100 and bringing the solder layer 120 into contact with the conductive layer 102, the solder layer 120 becomes an electrode (earth terminal). The solder layer 120 and a CRT housing (not shown) are electrically connected to each other using a conductive wire or a conductive film (tape), whereby the ARAS film 100 functions as an electromagnetic wave shielding film for the CRT housing.

[0005]

However, the ARAS film 100 using the solder layer 120 as such an electrode.
However, since the non-conductive layer 101 is interposed in the middle, there is a problem that electrical connection between the solder layer 120 and the conductive layer 102 cannot be reliably obtained. Further, the welding operation of the solder layer 120 is greatly influenced by the skill of the operator, and a large difference is easily generated in the electric resistance between the solder layer 120 and the conductive layer 102, and a large difference in reliability occurs. There was also the problem of coming. Although an automatic soldering apparatus can be used, this method has a problem that the price of the automatic soldering apparatus itself is high, and the price is reflected to increase the price of a product. Further, since the solder has low durability against heat and moisture, there is a problem that the change with time is remarkable, and the electric resistance increases with long-term use.

The present invention has been made in view of the above-mentioned problems, and has as its object to provide an electrode having little change with time and stable quality, and having a highly reliable electrical connection between the electrode film and the conductive layer. Another object of the present invention is to provide a functional film with an electrode, which can be easily automated in manufacturing equipment and can be reduced in cost, and a method for manufacturing the same.

[0007]

The functional film with electrodes according to the present invention has an electrode film on the surface of the outermost layer.
It has a lower conductivity than the conductive layer and a low conductive layer interposed between the electrode film and the conductive layer.

The method for producing a functional film with electrodes according to the present invention comprises:
Forming a conductive layer on the substrate, forming a low conductive layer having a lower conductivity than the conductive layer on the conductive layer, forming a vacuum atmosphere on at least the surface of the low conductive layer, and forming an electrode on the surface of the low conductive layer. Forming a film.

In the functional film with electrodes according to the present invention, the low conductive layer is interposed between the electrode film and the conductive layer, and the low conductive layer is formed without physical contact with the electrode film. It is configured to be electrically connected via Therefore, the electrode film can be formed without using the conventional solder or the like, and the electrical connection between the electrode film and the conductive layer is reliably performed. The conductive layer can have an electromagnetic wave shielding function by using, for example, ITO. Further, as the outermost low conductive layer, for example, a low refractive index film such as SiO ₂ (silicon dioxide) whose resistance is reduced by limiting the film thickness can be used, thereby having a light reflection preventing function. Can be made.

In the method of manufacturing a functional film with electrodes according to the present invention, after a low conductive layer is formed on the conductive layer, an electrode film is formed on the surface of the low conductive layer by sputtering, vapor deposition, or the like.

[0011]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows a first embodiment of the present invention.
Film 1 as a functional film with electrodes according to the first embodiment
0 shows a cross-sectional configuration. This ARAS film 10
Is formed, for example, using a display surface of a CRT as a substrate 20. The ARAS film 10 has a three-layer structure of a transparent layer 11, a conductive layer 12, and a low conductive layer 13 in order from a plurality of layers, for example, from the substrate 20 side. An electrode film 1 for electrical connection to the outside is provided on the surface of the outermost low conductive layer 13.
4 are formed.

The transparent layer 11 is formed of, for example, SiO ₂ and has a thickness of, for example, 100 nm.
The conductive layer 12 is formed of, for example, ITO, and has a thickness of, for example, 100 nm. The low conductive layer 13 has a lower conductivity than the conductive layer 12, and is formed of, for example, SiO ₂ like the transparent layer 11 in the present embodiment. However, the film thickness is formed thin enough to electrically connect the lower conductive layer 12 and the upper electrode film 14, and is, for example, 80 to 100 nm. Note that this SiO ₂
If the film thickness of the low conductive layer 13 is 50 nm to 200 nm,
Can be applied as

The electrode film 14 is formed of a metal material such as copper (Cu), for example, and is electrically connected to the conductive layer 12 via the low conductive layer 13. For example, if the planar shape of the electrode film 14 is 5 × 20 mm,
If the thickness of the low conductive layer 13 made of SiO ₂ is 80 to 100 nm as described above, the electric resistance of the low conductive layer 13 becomes 10 to 25Ω, and the electrode film 14 becomes the low conductive layer 13.
Is electrically connected to the conductive layer 12 via the.
In the present embodiment, the electrode film 14 has a function as a ground terminal for grounding via the CRT casing.

In the ARAS film 10, the conductive layer 12 formed inside is in a state of being grounded via the low conductive layer 13 and the electrode film 14, furthermore, the ground wire and the CRT casing. Thereby, the ARAS film 10 functions as an electromagnetic wave shielding film and an anti-reflection film. As the ground wire, for example, a conductive wire such as copper or a conductive film (tape) is used.

Next, a method for forming the electrode film 14 on the ARAS film 10 will be specifically described with reference to FIG. 1 and FIGS. Here, the ARAS film 10 is formed using the display surface of the CRT as the substrate 20 and
An example in which the electrode film 14 is formed on the AS film 10 by a sputtering method will be described.

FIGS. 2A to 2C are side views showing the process of forming the electrode film 14 on the ARAS film 10 formed on the display surface of the CRT 30 by using a small sputtering device 50. is there. FIGS. 3 (A) to 3 (C) show these FIGS.
3A illustrates a cross-sectional configuration of each process corresponding to (A) to (C).

In FIG. 2A, the ARAS film 10 formed on the CRT 30 has a transparent layer 11 formed of, for example, SiO ₂ , for example, a conductive layer 12 formed of ITO, for example, from the CRT 30 side as described above. It has a three-layer structure including a low conductive layer 13 having a thickness of about 80 to 100 nm and made of SiO ₂ . It is preferable that at least a region on the surface of the low conductive layer 13 of the ARAS film 10 where the electrode film is to be formed is subjected to a surface treatment by corona discharge before forming the electrode, so that the surface of the low conductive layer 13 is roughened. In a subsequent step, a good electrode film can be formed because the sputter material is easily attached. ARA
The CRT 30 on which the S film 10 has been formed is transported to the installation position of the sputtering device 50 by CRT transport means (not shown).

The sputtering device 50 has a vacuum chamber 60 inside as shown in FIG. The vacuum chamber 60 can be moved up and down by a lifting means (not shown). A sputtering cathode 62 connected to an external power supply is provided on a ceiling surface of the vacuum chamber 60. The sputtering cathode 62 is provided with a target made of the same material as the electrode material, for example, copper (Cu). Vacuum chamber 60 facing sputtering cathode 62
An opening 65 is provided on the bottom surface of. An O-packing 64 for preventing vacuum leakage is provided around the opening 65. The vacuum chamber 60 further includes an exhaust valve 61.
, And a gas supply system including the gas supply valve 63 are provided in association with each other. The exhaust valve 61 is connected to a vacuum pump, and the gas supply valve 63 is connected to a gas supply source. The opening 65 has a shape (for example, 5 mm × 20 m) corresponding to the electrode film formed on the surface of the low conductive layer 13.
m rectangle).

After the CRT 30 has been transported to the installation position of the sputtering apparatus 50 having the above-described structure, the region for forming the electrode film is positioned. Thereafter, as shown in FIG. 3 (B), a vacuum tank 6
0 is lowered so that the opening 65 is located at a position facing the low conductive layer 13 of the ARAS film 10. When the vacuum chamber 60 is lowered, the O packing 6 provided around the opening 65 is opened.
4 and the low conductive layer 13 adhere to each other, and the inside of the vacuum chamber 60 is sealed.

Next, as shown in FIGS. 2B and 3B, the gas introduction valve 63 and the leak valve (not shown) are closed, and the exhaust valve 61 is opened to open the ARA.
The inside of the vacuum chamber 60 sealed by the low conductive layer 13 of the S film 10 and the O packing 64 is evacuated. And the vacuum chamber 60
When the internal pressure of the exhaust gas reaches, for example, 5 Pa, the exhaust valve 61
Is closed, the gas introduction valve 63 is opened until the internal pressure of the vacuum chamber 60 reaches, for example, 30 Pa, and argon gas (Ar) is introduced into the vacuum chamber 60, for example, as a sputtering gas.

When a negative voltage is applied to the sputtering cathode 62 after the introduction of the gas, a plasma 66 is generated in the vacuum chamber 60, and a target (here, copper) is sputtered, and an electrode film is formed on the low conductive layer 13. 14 are formed. When the sputtering is completed, the sputtering cathode 6
After the application of voltage to 2 is stopped and the exhaust valve 61 and the gas introduction valve 63 are closed, a leak valve (not shown) is opened to introduce air until the internal pressure of the vacuum chamber 60 becomes equal to the atmospheric pressure.

Next, as shown in FIG. 2C and FIG. 3C, the vacuum tank 60 is raised and the ARAS film 1 is removed.
The CRT 30 having the electrode film 14 formed thereon is transported to the next step. In the next step, the electrode film 14 of the ARAS film 10 and the housing of the CRT 30 are electrically connected by a conductive tape or the like. As a result, the conductive layer 12 is grounded via the low conductive layer 13 and the electrode film 14, and a function of shielding electromagnetic waves is provided. Hereinafter, similarly, the steps of transporting, positioning, sputtering and the like of the next CRT are repeated.

The electrode films 14 may be provided on both sides of the display surface 32 of the CRT 30 as shown in FIG. 4A, for example, or may be provided on the display surface 32 as shown in FIG. It may be provided at the lower part. In any case, the electrode film 14 is made of CR
If the area does not correspond to the image display area 31 of T30,
Any number can be formed at any position on the display surface 32.

In the present embodiment, the electrode film 14 is formed by using the sputtering device 50. However, instead of the sputtering device 50, a vapor deposition device 250 may be used as shown in FIG. The process of forming the electrode film 14 using the vapor deposition device 250 is substantially the same as the process using the sputtering device 50. That is, FIG.
As shown in (A), the opening 65 of the vapor deposition device 250 is provided on the surface of the ARAS 10 formed on the display surface of the CRT 30.
Position so that Next, as shown in FIG. 5B, the vapor deposition device 250 and the ARAS film 10 are brought into close contact with each other, and then vapor deposition is performed by the vapor deposition device 250. afterwards,
When the vapor deposition device 250 is lowered as shown in FIG. 5C, the formation of the electrode film 14 on the ARAS film 10 is completed.

As described above, in this embodiment,
The electrode film 14 is formed on the low conductive layer 13 of the ARAS film 10 by using the sputtering device 50 or the vapor deposition device 250, and the electrode film 14 and the conductive layer 12 are interposed between the low conductive layer 13 and the low conductive layer 13. Since the electrodes are electrically connected to each other, there is no physical contact between the electrode film and the conductive layer as in the conventional method using solder. Therefore, the electrode film 1
The reliability of the electrical connection between the conductive layer 4 and the conductive layer 12 is improved. In addition, the sputtering device 50 or the vapor deposition device 2
Since 50 has an opening 65 corresponding to the shape of the electrode film 14, the electrode film 14 can be locally and efficiently formed.
Further, since the size of the apparatus itself can be easily reduced, automation can be easily performed, there is no variation in the product, the quality can be stabilized, and the price of the product can be reduced.

In the present embodiment, the surface of the low conductive layer 13 is roughened by performing a corona discharge treatment before the formation of the electrode film 14, so that the sputtering in the later step is facilitated and the electrode film is formed. 14 can be formed stably.

[Second Embodiment] FIGS. 6A to 6C
Represents a step of forming an electrode film according to the second embodiment of the present invention. In the present embodiment, PET is used as the substrate.
(Polyethylene Terephthalate) PET film 21 is used, and ARA is formed on the PET film 21.
An S film is formed, and an electrode film is formed on the ARAS film. The ARAS film 1 of the PET film 21 on which the ARAS film 10 and the electrode film 14 are formed
The surface on which 0 is not formed is attached to, for example, a display surface of a CRT, and the electrode film 14 is connected to ground via a CRT housing. Therefore, in the present embodiment, the type of the substrate on which the ARAS film 10 is formed, the process of forming the electrode film 14,
The step of attaching the ARAS film 10 to the display surface of the CRT is different from that of the first embodiment, and the other steps are the same as those of the first embodiment. Hereinafter, only differences from the first embodiment will be described, and other description will be omitted.

In this embodiment, the ARAS film 10
The upper electrode film 14 is formed using the sputtering device 50 described in the first embodiment. First, FIG.
As shown in (A), ARA is placed on the film holder 51.
The PET film 21 on which the S film 10 is formed is arranged. At this time, it is assumed that the film holder 51 is disposed at a position facing the sputtering device 50 with a region for forming the electrode film of the ARAS film 10 therebetween. It is desirable that the film holder 51 has a shape larger than the opening 65.

Next, as shown in FIG. 6B, the sputtering apparatus 50 is lowered, and the ARAS film 10 and the PET film 2 are held by the opening 65 and the film holder 51.
1 and sandwich. Thereby, the vacuum chamber of the sputtering device 50 is sealed by the ARAS film 10. Thereafter, by performing sputtering in the same manner as in the first embodiment, the electrode film 14 is formed as shown in FIG. Thereafter, the sputtering apparatus 50 is raised, and A
By separating the sputtering device 50 from the RAS film 10, the ARAS film 10 including the electrode film 14 can be obtained. Thereafter, the ground connection of the electrode film 14 is performed through a step of attaching the ARAS film 10 on the display surface of the CRT.

In the present embodiment, the electrode film 14 is formed by using the sputtering apparatus 50. However, instead of the sputtering apparatus 50, a vapor deposition apparatus 250 shown in FIG.
May be used. The electrode film 1 is formed using the vapor deposition device 250.
The step of forming 4 is the same as the case where the sputtering apparatus 50 is used. That is, as shown in FIG. 7A, the ARAS film 10 formed on the PET film 21 is formed.
Is positioned so that the opening 65 of the vapor deposition device 250 coincides with the surface of. At this time, the film holder 51 is arranged so that the opening 65 is closed via the ARAS film 10 and the PET film 21. Next, as shown in FIG. 7 (B), after vapor deposition is performed in a state where the vapor deposition device 250 and the ARAS film 10 are in close contact with each other, the vapor deposition device 250 is lowered as shown in FIG. 7 (C). Thus, the ARAS film 10 having the electrode film 14 on the lower surface can be obtained. ARAS film 10
The PET film 21 on which is formed is adhered to the display surface of a CRT, and then grounded.

As described above, in the present embodiment, the PET film 21 is used as the substrate and the PET film 21 is held by the film holder 51. Therefore, the ARAS film 10 and the PET film 21 use the sputtering device or the vapor deposition device. The inside of the device can be sealed, and the electrode film 14 can be easily formed on the ARAS film 10. Other functions and effects are the same as those of the first embodiment.

[Third Embodiment] FIGS. 8 and 9 show a method of forming an electrode film according to a third embodiment of the present invention. FIG. This shows the formed state. ARA according to the present embodiment
Although the structures of the S film 10 and the electrode film 14 are the same as those of the first embodiment, in this embodiment, the electrode film 14 is
Is formed inside the sputtering apparatus 50a shown in FIG. Therefore, in the present embodiment, the ARAS film 10
An apparatus and a method of forming the electrode film 14 are different from those of the first embodiment, and the others are the same as those of the first embodiment. Hereinafter, only differences from the first embodiment will be described, and other description will be omitted.

The sputtering device 50a has a vacuum chamber 60a.
And a pair of sputtering cathodes 62a connected to an external power supply is provided on the ceiling surface of the vacuum chamber 60a. The sputtering cathode 62a is provided with a target made of, for example, copper (Cu) as an electrode metal material. The vacuum chamber 60a is provided with an exhaust system including an exhaust valve 61a and a gas supply system including a gas supply valve 63a. The exhaust valve 61a is connected to a vacuum pump, and the gas supply valve 63a is connected to a gas supply source.

In this embodiment, first, the ARAS film 10 is formed on the display surface of the CRT 30 and then the ARAS film 1 is formed.
A mask 70 is formed on the mask 0. The mask 70 is formed of the electrode film 1
4 has an opening 71 in a region corresponding to the formation region,
Through this opening 71, the low conductive layer 13 of the ARAS film 10 (FIG. 1)
See).

Next, the CRT 30 having the mask 70 formed on the ARAS film 10 is placed in the vacuum chamber 60a so that the display surface faces the sputtering cathode 62a. Then, the leak valve (not shown) and the gas introduction valve 63a are closed, and the exhaust valve 61a is opened to evacuate the vacuum chamber 60a. When the internal pressure of the vacuum chamber 60a reaches, for example, 5 Pa, the exhaust valve 61a is closed, and the gas introduction valve 63a is opened until the internal pressure of the vacuum chamber 60a reaches, for example, 30 Pa. Is introduced.

When a negative voltage is applied to the sputtering cathode 62a after introducing the gas, the target is sputtered, and the electrode film 14 is formed in a region corresponding to the opening 71 on the low conductive layer 13.

In this embodiment, the sputtering cathode 62a is provided on the ceiling surface and the CRT 30
Is performed, with the display surface facing upward, that is, so-called down sputtering, but the sputtering cathode 62a is connected to the vacuum chamber 60a.
Side sputtering provided on the side surface of the substrate or up sputtering provided with the sputtering cathode 62a below the vacuum chamber 60a.

Further, in the present embodiment, the electrode film 14 is formed using the sputtering device 50a, but instead of the sputtering device 50a, a vapor deposition device 250a shown in FIG. 10 may be used. The vapor deposition device 250a includes two vapor deposition sources 262 at the bottom of the vacuum chamber 60a. The other configuration is substantially the same as the sputtering apparatus 50a of FIG. 9, and is the same as the above case except that the electrode film 14 is formed on the lower surface of the ARAS film 10 with the display surface of the CRT 30 facing downward. Therefore, the description is omitted.

[Fourth Embodiment] Next, a fourth embodiment of the present invention will be described.
An embodiment will be described.

FIG. 11 shows an ARA on a PET film 21.
An S film 10 is formed, and an electrode film 14 is formed on the ARAS film 10.
Is formed. In the present embodiment, PE
Although the structures of the T film 21, the ARAS film 10, and the electrode film 14 are the same as those of the second embodiment, in this embodiment, the electrode film 14 is formed inside the sputtering device 50a as shown in FIG. Formed. Therefore, in this embodiment, an apparatus and a method for forming the electrode film 14 on the ARAS film 10 are different from those of the second embodiment, and the other parts are the same as those of the second embodiment. Hereinafter, only the points different from the second embodiment will be described, and other description will be omitted.

The sputtering apparatus 50a has the same structure as that used in the third embodiment (see FIG. 9). First, the ARAS film 10 is formed on the PET film 21,
A mask 70 having an opening 71 is formed on the ARAS film 10. Next, the ARAS film 10 and the mask 7
The PET film 21 on which 0 is formed is arranged in the vacuum chamber 60a such that the surface of the mask 70 faces the sputtering cathode 62a. After that, the electrode film 14 corresponding to the mask 70 is formed on the low conductive layer 13 of the ARAS film 10 in the same procedure as in the third embodiment.

In the present embodiment, the electrode film 14 is formed by using the sputtering device 50a, but instead of the sputtering device 50a, as shown in FIG.
A vapor deposition device 250a having the same structure as that shown in FIG. 10 may be used.

As described above, also in the third and fourth embodiments, the conductive layer 12 and the electrode film 14 can be connected to the ground via the low conductive layer 13, as in the first embodiment. The same effects as those of the first embodiment can be obtained.

[Fifth Embodiment] Next, a fifth embodiment of the present invention will be described.
An embodiment will be described.

FIG. 14 shows an ARA on the PET film 21.
This shows a state in which electrode films 14 are formed on both sides of the ARAS film 10 after the S film 10 is formed. In the present embodiment, the region where the electrode film 14 is formed on the low conductive layer 13 of the ARAS film 10, the method for forming the ARAS film 10 and the electrode film 14, and the apparatus therefor are different from those of the fourth embodiment.
Others are the same as the fourth embodiment. Hereinafter, only differences from the fourth embodiment will be described, and other description will be omitted.

The PET film 21 according to the present embodiment
Is a continuous roll-shaped film, and the ARAS film 1 is formed along the longitudinal direction of the PET film 21.
0 and the electrode film 14 are continuously formed.

In this embodiment, a continuous sputtering apparatus 150 shown in FIG. 15 is used. The continuous sputtering apparatus 150 includes a vacuum chamber 160, and the vacuum layer 160 is provided with an exhaust system including an exhaust valve 161 and an air supply system including a gas supply valve 163. In the vacuum chamber 160, an unwinding roll 168a, sputter rolls 168b, 168c, and a winding roll 168d are arranged in this order from the right in the figure. A small roll 169 is appropriately arranged. That is, PE
After being fed from the unwinding roll 168a, the T film 21 moves along the peripheral surfaces of the sputter rolls 168b and 168c, and is wound up by the winding roll 168d.

ARA is formed around the sputter roll 168b.
Sputtering cathodes 162a, 162 for forming S film
b, 162c, and around the sputter roll 168c, similarly, sputtering cathodes 162d, 162e, 162f for forming an ARAS film are disposed to face each other with the PET film 21 interposed therebetween. Further, between the sputter roll 168c and the winding roll 168d, a sputtering cathode 162g for forming an electrode is disposed,
A mask 170 for forming an electrode is provided between the sputtering cathode 162 g and the PET film 21.

In the continuous sputtering apparatus 150,
Leak valve (not shown) and gas introduction valve 163
And the exhaust valve 161 is opened to open the vacuum chamber 16.
Exhaust the inside of 0 After exhausting, the exhaust valve 161 is closed, the gas introduction valve 163 is opened, and, for example, argon gas is introduced into the vacuum chamber 160 as a sputtering gas, and then the gas introduction valve 163 is closed.

Thereafter, the PET film 21 is sent out from the unwinding roll 168a, and the PET film 21 is conveyed along the sputter rolls 168b and 168c, and then wound up by the winding roll 168d. At the same time, the transparent layer 11, the conductive layer 12, and the low conductive layer 13 as shown in FIG. 1 are sequentially formed on the surface of the PET film 21 by the sputtering cathodes 162a to 162f to form the ARAS film 10. .

After the ARAS film 10 is formed, a voltage is applied to a corona discharge electrode (not shown), and the surface of the low conductive layer 13 is subjected to a corona discharge treatment. Further, by applying a voltage to the sputtering cathode 162g,
The electrode film 14 is selectively formed on the ARAS film 10 via a mask 170. After the electrode film 14 is formed on the ARAS film 10, the PET film 21
It is taken up by d and collected. Thereafter, the PET film 21 is cut into a shape corresponding to the display surface of the CRT in a separate step, and is then attached to the CRT, and a conductive tape is further applied between the electrode film 14 and the CRT housing. As a result, a ground connection is made and functions as an electromagnetic wave shielding film.

As described above, in the present embodiment, the ARAS film 10 and the electrode film 14 can be continuously formed on the PET film 21.

In this embodiment, the electrode film 14 is also made of A
Although the RAS film 10 is formed by sputtering in the same manner as the RAS film 10, the electrode film 14 may be formed by a vapor deposition method. In this case, an evaporation source 262 may be used instead of the sputtering cathode 162g (FIG. 15) as shown in FIG.

Although the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment, and can be variously modified. For example, in the embodiment described above, the constituent material of ARAS film 10, SiO _2, ITO in order from the substrate side, has been the SiO _2, the present invention is not limited to these materials, for example, instead of ITO TiN (titanium nitride) may be used.

In each of the above embodiments, the ARAS film 10 has been described as having a three-layer structure. However, the present invention is not limited to the three-layer structure, and at least two layers of a conductive layer and a low conductive layer in contact with the conductive layer. What is necessary is to include a structure,
Further, another layer may be added to form a structure of four or more layers.

Further, in the above-described embodiment, the example in which the electrode film 14 is formed by the sputtering method or the vapor deposition method has been described, but the CVD (Chemical Vapor Deposition;
It may be formed by other methods such as a chemical vapor deposition method and a plating method.

Further, in the above-described embodiment, the example in which the electrode film 14 is formed of copper has been described, but other conductive materials such as metals may be used. In addition, the electrode film 14 formed on the functional film of the present invention is not limited to the one formed by the above method, and may be used by attaching it like a gold foil or a conductive tape.

In the above embodiment, the low conductive film 13
Has been described with reference to a thin film of SiO ₂ , but other Al ₂ O ₃ ,
It can be changed to a material such as MgF.

[0060]

As described above, according to the functional film with electrodes according to any one of claims 1 to 6, a low conductive layer is interposed between the electrode film and the conductive layer. Therefore, there is no need to physically contact the electrode film and the conductive layer. Therefore, it is not necessary to form the electrode film by soldering as in the related art, and it is possible to easily form an electrode film with little change over time by a method such as sputtering.
Further, since the electrical connection between the electrode film and the conductive layer is reliably performed, the reliability of the product is improved.

According to the method for manufacturing a functional film with electrodes according to any one of claims 7 to 11, the step of forming a conductive layer on the substrate and the step of forming a conductive layer on the conductive layer more than the conductive layer are performed. Forming a low-conductivity low-conductivity layer and at least the surface of the low-conductivity layer in a vacuum atmosphere, and forming an electrode film on the surface of the low-conductivity layer, so that automation can be easily achieved. Thus, the quality of the functional film can be stabilized and the price can be reduced.

In particular, according to the method of manufacturing a functional film according to the eleventh aspect, since the functional film and the electrode film are formed collectively, there is an effect that the manufacturing process can be simplified.

[Brief description of the drawings]

FIG. 1 is a cross-sectional configuration diagram of a functional film with electrodes according to a first embodiment of the present invention.

FIG. 2 is a side view illustrating a step of forming an electrode film according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional configuration diagram for explaining a step of forming an electrode film in the same manner.

FIG. 4 is a plan view showing a region where an electrode film is formed according to the first embodiment of the present invention.

FIG. 5 is a side view for explaining a modification of the step shown in FIG. 2;

FIG. 6 is a side view illustrating a step of forming an electrode film according to a second embodiment of the present invention.

FIG. 7 is a side view for explaining a modification of the step shown in FIG. 6;

FIG. 8 is a side view of a functional film with electrodes according to a third embodiment of the present invention.

FIG. 9 is a side view for explaining a step of forming the electrode film shown in FIG.

FIG. 10 is a side view for explaining a modification of the step shown in FIG. 9;

FIG. 11 is a side view of a functional film with electrodes according to a fourth embodiment of the present invention.

12 is a cross-sectional configuration diagram for describing a process of forming the electrode film shown in FIG.

FIG. 13 is a sectional configuration diagram for describing a modification of the step shown in FIG.

FIG. 14 is a plan view of a functional film with electrodes according to a fifth embodiment of the present invention.

FIG. 15 is a cross-sectional view for explaining a step of forming the functional film with electrodes shown in FIG.

FIG. 16 is a cross-sectional configuration diagram for describing a modification of the step shown in FIG.

FIG. 17 is a cross-sectional view for explaining a conventional method of forming a functional film.

[Explanation of symbols]

10 ARAS film (functional film), 11 transparent layer, 12 conductive layer, 13 low conductive layer, 14 electrode film, 20 substrate, 3
0: CRT, 50, 50a: Sputtering device, 15
0: continuous sputtering apparatus, 60, 60a, 160 ...
Vacuum chamber, 62, 62a, 162a, 162b, 162
c, 162d, 162e, 162f, 162g ... sputtering cathode, 65 ... opening

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Masayasu Kakinuma 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Kunio Iku 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F term (reference) 2K009 AA02 BB24 CC03 DD04 DD17 EE03 5C028 AA01 AA07 5C032 AA02 DD02 DE01 DF05 DG02 EE17 EF05

Claims (11)

[Claims] 1. A functional film having an electrode film on the surface of an outermost layer, wherein the conductive film has a lower conductivity than the conductive layer, and is interposed between the electrode film and the conductive layer. A functional film with an electrode, comprising: a low conductive layer. 2. The functional film with an electrode according to claim 1, wherein the entire surface of the electrode film is formed in contact with the low conductive layer. 3. The functional film with electrodes according to claim 1, wherein the electrode film is formed of a metal material. 4. The functional film with an electrode according to claim 1, wherein the functional film with electrodes is formed on a display surface of an image display device or on a plastic film attached to the display surface. 5. The functional film with an electrode according to claim 4, wherein the electrode film is used as an electromagnetic wave shielding film by being grounded via a housing of the image display device. 6. The functional film with electrodes according to claim 5, wherein the low conductive layer has an antireflection function. 7. A method for producing a functional film with electrodes having an electrode film on the surface of an outermost layer, comprising: forming a conductive layer on a substrate; and having a lower conductivity than the conductive layer on the conductive layer. A method for manufacturing a functional film with an electrode, comprising: forming a low conductive layer; and forming an electrode film on the surface of the low conductive layer at least on a surface of the low conductive layer in a vacuum atmosphere. 8. A method for manufacturing a functional film with an electrode, wherein a surface of the low conductive layer is locally made into a vacuum atmosphere, and an electrode film is selectively formed on the surface of the low conductive layer. 9. The method according to claim 7, wherein in the step of forming the electrode film, a corona discharge treatment is performed on a surface of the low conductive layer, and the electrode film is formed on the surface subjected to the corona discharge treatment. Method for producing a functional film with electrodes. 10. A film-like substrate is used as the substrate, and at least a position of the film-like substrate facing a region where an electrode film is to be formed is held by a holder, and a local surface of the low conductive layer is held. The method according to claim 8, wherein the electrode film is formed by performing a vacuum treatment. 11. The electrode film after moving the film-like substrate between two rolls and forming a functional film including the conductive layer and the low conductive layer on the moving film-like substrate. 8. The method for producing a functional film with electrodes according to claim 7, wherein