KR20180025785A - Manufacturing method of transparent electrode - Google Patents

Abstract

The present invention relates to a manufacturing method of a transparent electrode using a roll-to-roll type transparent electrode manufacturing apparatus including at least one atomic layer deposition module. The method comprises: forming a first protection film and a second protection film on a first surface of a flexible substrate and a second surface opposite to the first surface, respectively, by processing a first atomic layer deposition; forming a first oxide film on the first protection film by processing a second atomic layer deposition; forming a metal film on the first oxide film; and forming a second oxide film. Each of the first and second atomic layer deposition processes uses the at least one atomic layer deposition module.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a transparent electrode,

The present invention relates to a transparent electrode manufacturing method, and more particularly, to a transparent electrode manufacturing method using a roll-to-roll type transparent electrode manufacturing apparatus.

The emergence of cutting-edge information technology and renewable energy industries has raised interest in transparent electrodes. As the industry in the field of using transparent electrodes develops, there is a demand for a transparent electrode which is thin and has high transparency and is excellent in electric conductivity.

The transparent electrode is formed of a material having both electrical conductivity and light transmittance. Transparent Conducting Oxide (TCO), which is manufactured in the form of a thin film, is a typical transparent electrode material. A transparent conductive oxide has a high optical transmittance (over 85%) in the visible light region and a low specific resistance ^- is a general term for a degenerate (degenerate) semiconductor electrode of an oxide having a (1 × 10 ³ Ωcm) at the same time. Transparent conductive oxides are used as core electrode materials for functional thin films such as antistatic and electromagnetic wave shielding and flat panel displays, solar cells, touch panels, transparent transistors, flexible optoelectronic devices, and transparent optoelectronic devices depending on the sheet resistance. With the recent development of flexible devices, there has been a demand for a transparent electrode manufacturing method for mass-producing transparent electrodes having high conductivity, high transparency and high flexibility.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a transparent electrode with improved production efficiency.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a method of manufacturing a transparent electrode, the method including: depositing at least one atomic layer deposition module in a roll-to- Forming a first protective film and a second protective film on a first surface of the flexible substrate and a second surface opposite to the first surface by performing a first atomic layer deposition process; Performing a second atomic layer deposition process to form a first oxide film on the first protective film; Forming a metal film on the first oxide film; And forming a second oxide layer, wherein each of performing the first atomic layer deposition process and the second atomic layer deposition process may comprise using the at least one atomic layer deposition module.

According to exemplary embodiments, the at least one atomic layer deposition module includes a first atomic layer deposition module, wherein the first and second protective layers are formed simultaneously using the first atomic layer deposition module .

According to exemplary embodiments, forming the first oxide layer may include using the first atomic layer deposition module.

According to exemplary embodiments, the transparent electrode manufacturing apparatus may further include a plasma processing module, wherein before formation of the first oxide film, plasma processing of the surface of the first protective film using the plasma processing module may further comprise: have.

According to exemplary embodiments, the plasma treatment may be performed using a hydrogen plasma.

According to exemplary embodiments, forming the first oxide layer may further comprise moving the flexible substrate from the plasma processing module to the first atomic layer deposition module.

According to exemplary embodiments, the method further comprises plasma processing the surface of the first oxide film prior to formation of the metal film, wherein plasma processing the surface of the first oxide film may comprise utilizing the plasma processing module. have.

According to exemplary embodiments, the plasma treatment may be performed using a hydrogen plasma.

According to exemplary embodiments, the at least one atomic layer deposition module includes a first atomic layer deposition module and a second atomic layer deposition module, wherein the first atomic layer deposition process comprises the first atomic layer deposition module And a second atomic layer deposition process may be performed using the second atomic layer deposition module.

According to exemplary embodiments, the transparent electrode manufacturing apparatus further comprises a plasma processing module disposed between the first and second atomic layer deposition modules, wherein prior to formation of the first oxide film, the plasma processing module utilizes And subjecting the surface of the first protective film to plasma treatment.

According to exemplary embodiments, the plasma processing module is a first plasma processing module, and the transparent electrode device further comprises a first plasma processing module, wherein prior to forming the metal film, using the second plasma processing module And further subjecting the surface of the first oxide film to plasma treatment.

According to exemplary embodiments, the transparent electrode manufacturing apparatus further includes a first sputtering module and a second sputtering module, wherein the metal film is formed using the first sputtering module, and the second oxide film is formed by a second sputtering Module can be formed.

According to exemplary embodiments, the first sputtering module is a DC sputtering module, and the second sputtering module is an RF sputtering module.

According to exemplary embodiments, the first protective film and the second protective film may be formed to have substantially the same thickness.

According to exemplary embodiments, the thickness of the metal film may be smaller than the thickness of the first oxide film and the second oxide film.

According to an embodiment of the present invention, the transparent electrode manufacturing method may be performed in a roll-to-roll manner. Thus, the production efficiency of the transparent electrode can be improved. According to an embodiment of the present invention, a method of manufacturing a transparent electrode may include forming a protective film on a first surface and a second surface of a flexible substrate. Thus, defective deposition of the transparent electrode due to a minute defect on the surface of the substrate can be prevented, and peeling of the films contained in the transparent electrode can be prevented. According to embodiments of the present invention, a transparent electrode manufacturing method includes forming a protective film and a first oxide film using an atomic layer deposition process so that a metal film is thinner than a first oxide film and a second oxide film on the first oxide film . ≪ / RTI > Thus, the light transmittance and flexibility of the transparent electrode can be improved.

1 and 2 are cross-sectional views schematically showing a transparent electrode manufacturing apparatus according to one embodiment of the present invention.
3 is a flowchart schematically showing a method of manufacturing a transparent electrode according to one embodiment of the present invention.
4 to 8 are cross-sectional views illustrating a method of manufacturing a transparent electrode according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in different forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification. The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions. In addition, since they are in accordance with the preferred embodiment, the reference numerals presented in the order of description are not necessarily limited to the order.

1 and 2 are cross-sectional views schematically showing a transparent electrode manufacturing apparatus according to one embodiment of the present invention.

Referring to FIG. 1, the transparent electrode manufacturing apparatus 1 includes a supply roll 5, a recovery roll 6, guide rollers 7, a first atomic layer deposition module 100, a first plasma processing module 200, A first sputtering module 300, and a second sputtering module 400.

The supply roll 5 may be disposed in the transparent electrode manufacturing apparatus 1. [ The flexible substrate 10 may be prepared in a state of being wound on the supply roll 5. A recovery roll 6 may be disposed on the opposite side of the supply roll 5 so that the flexible substrate 10 can be wound and recovered. The flexible substrate 10 wrapped around the supply roll 5 may be recovered by winding through the recovery roll 6 through steps for manufacturing a transparent electrode while being unwound. A plurality of guide rollers 7 can be arranged. The guide rollers 7 may be cylindrical and may have various diameters. The guide rollers 7 can be appropriately disposed in the transparent electrode manufacturing apparatus 1 so as to be able to support the flexible substrate 10. The flexible substrate 10 can be maintained at a predetermined tension by the supply roll 5, the recovery roll 6, and the guide rollers 7. [

According to one embodiment, the first atomic layer deposition module 100 may include a first chamber 110, first showerheads 120a and 120b, and first gas supplies 130a and 130b. The first chamber 110 may include an inlet 111 and an outlet 112 through which the flexible substrate 10 is introduced. Blocking diaphragms 113 for isolating the inside and the outside of the first chamber 110 may be disposed in the inlet 111 and the outlet 112. The blocking diaphragms 113 can be moved up and down to open and close the inlet 111 and the outlet 112.

A plurality of first showerheads 120a and 120b may be disposed in the first chamber 110. [ For example, each of the pair of first showerheads 120a and 120b may be spaced apart from the flexible substrate 10 by a predetermined distance, and may be disposed in parallel with the flexible substrate 10. That is, a pair of first showerheads 120a and 120b may be disposed on the first surface 10a and the second surface 10b of the flexible substrate 10, respectively. Each of the first showerheads 120a and 120b may include a plurality of discharge holes (not shown) for discharging gases.

The first gas supply units 130a and 130b may be disposed outside the first chamber 110. [ The first gas supply units 130a and 130b may include first precursor gas supply units 132a and 132b and first purge gas supply units 133a and 133b. The first precursor gas supply units 132a and 132b may communicate with the first shower heads 120a and 120b, respectively. The precursor gases supplied to the first showerheads 120a and 120b through the first precursor gas supply units 132a and 132b are supplied to the first chamber 110 through the discharge holes of the first showerheads 120a and 120b, As shown in FIG. The purge gas supply units 133a and 133b may communicate with the first chamber 110, respectively. The purge gases supplied through the purge gas supply units 133a and 133b may be supplied into the first chamber 110.

According to one embodiment, the first plasma processing module 200 includes a second chamber 210, first plates 220a and 220b, second gas supply units 230a and 230b, and first power supply units 240a , 240b.

A plurality of first plates 220a and 220b may be disposed in the second chamber 210. For example, each of the pair of first plates 220a and 220b may be spaced apart from the flexible substrate 10 by a predetermined distance, and may be disposed in parallel with the flexible substrate 10. That is, a pair of first plates 220a and 220b may be disposed on the first surface 10a and the second surface 10b of the flexible substrate 10, respectively. Each of the first plates 220a and 220b may include a plurality of discharge holes (not shown) for discharging gases. The first plates 220a and 220b may include a conductive material.

The second gas supply units 230a and 230b may be disposed outside the second chamber 210. [ The second gas supply units 230a and 230b may communicate with the first plates 220a and 220b, respectively. The plasma process gases supplied to the first plates 220a and 220b through the second gas supply units 230a and 230b are discharged into the second chamber 210 through the discharge holes of the first plates 220a and 220b Can be sprayed.

The first power supply units 240a and 240b may be disposed outside the second chamber 210. [ The first power supply units 240a and 240b may be electrically connected to the plurality of first plates 220a and 220b, respectively. The first power supply units 240a and 240b may apply power to the first plates 220a and 220b. The power source may be an RF power source. The pair of first plates 220a and 220b arranged to face each other can act as a counter electrode with each other. RF power may be generated when power is applied to the first plates 220a and 220b.

According to one embodiment, the first plasma processing module 200 may include a first plurality of plates 220a, a second gas supply 230a, and a first power supply 240a. The configuration of the first plasma processing module 200 having a first plurality of plates 220a, a second gas supply 230a, and a first power supply 240a will be described below with reference to FIG.

According to one embodiment, the first sputtering module 300 may include a third chamber 310, a first sputter gun 320, and a second power supply 340. The first sputter gun 320 may be disposed within the third chamber 310. The second power supply may be disposed outside the third chamber 310. The second power supply 340 may be electrically connected to the first sputter gun 320. The second power supply 340 may apply power to the first sputter gun 320. The power source may be a DC power source.

According to one embodiment, the second sputtering module may include a fourth chamber 410, a second sputter gun 420 and a third power supply 440. A second sputter gun 420 may be disposed in the fourth chamber 410. The second sputter gun 420 may be electrically connected to the third power supply 440. The third power supply 440 may apply power to the second sputter gun 420. The power source may be an RF power source.

Referring to FIG. 2, the transparent electrode manufacturing apparatus 1 includes a first atomic layer deposition module 100, a first plasma processing module 200, a second atomic layer deposition module 500, a second plasma processing module 600 ), A first sputtering module 300 and a second sputtering module 400. The first atomic layer deposition module 100, the first sputtering module 300, and the second sputtering module 400 may be the same as those described with reference to FIG. For simplicity of explanation, we focus on the difference.

According to one embodiment, the first plasma processing module 200 may include a first plurality of plates 220a, a second gas supply 230a, and a first power supply 240a. The first plate 220a may be disposed in the second chamber 210 so as to face the first surface 10a of the flexible substrate 10. The first plate 220a may be spaced apart from the first surface 10a of the flexible substrate 10 by a predetermined distance and may be disposed in parallel with the flexible substrate 10.

According to one embodiment, the second atomic layer deposition module 500 may include a fifth chamber 510, a second showerhead 520, and a second gas supply 530. The second showerhead 520 may be disposed in the fifth chamber 510. The second showerhead 520 may be disposed to face the first surface 10a of the flexible substrate 10. [ The second showerhead 520 may be spaced apart from the first surface 10a of the flexible substrate 10 by a predetermined distance and may be disposed in parallel with the flexible substrate 10. A second gas supply unit 530 may be disposed outside the fifth chamber 510. The second gas supply unit 530 may include second precursor gas supply units 532 and a purge gas supply unit 533. The second precursor gas supply units 532 may communicate with the second showerhead 520. The purge gas supply unit 533 may communicate with the fifth chamber 510.

The second plasma processing module 600 may include a sixth chamber 610, a second plate 620, a third gas supply 630, and a fourth power supply 640.

Hereinafter, a transparent electrode manufacturing method using the transparent electrode manufacturing apparatus of FIG. 1 will be described with reference to FIGS. 3 to 8. FIG.

3 is a flowchart schematically showing a method of manufacturing a transparent electrode according to one embodiment of the present invention. 4 to 8 are cross-sectional views illustrating a method of manufacturing a transparent electrode according to an embodiment of the present invention.

Referring to Figs. 1, 3 and 4, a flexible substrate 10 may be provided in a state of being wound around a supply roll 5 and a recovery roll 6. The flexible substrate 10 may include a first side 10a and a second side 10b opposite the first side 10a. The flexible substrate 10 may be a transparent substrate. The flexible substrate 10 may comprise metal and / or plastic. For example, the plastic may be made of a material selected from the group consisting of polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethyeleneterephthalate ), Polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC) and cellulose acetate propionate : CAP).

The protective film 20 may be formed on the first surface 10a and the second surface 10b of the flexible substrate 10 (S10). 4, the formation of the protective film 20 on the first and second surfaces 10a and 10b of the flexible substrate 10 is accomplished by forming the first layer 10a and the second layer 10b within the first atomic layer deposition module 100, And may be performed through an atomic layer deposition (ALD) process. Specifically, the supply roll 5 and the recovery roll 6 can rotate in the first direction D1. As the supply roll 5 and the recovery roll 6 rotate in the first direction D1, the flexible substrate 10 wound on the supply roll 5 can be unwound. Accordingly, a portion of the flexible substrate 10 can be transferred into the first atomic layer deposition module 100. A portion of the flexible substrate 10 may be transported through the inlet 111 into the first chamber. The blocking diaphragms 113 disposed at the inlet 111 and the outlet 112 may be moved adjacent to the flexible substrate 10 to separate the atmosphere inside and outside the first chamber 110.

The first gas supply unit 130 may supply the first precursor gas, the second precursor gas, and the purge gas to the first chamber 110. The flexible substrate 10 is alternately exposed to the first precursor gas, the second precursor gas and the purge gas to form the protective film 20 on the first surface 10a and the second surface 10b of the flexible substrate 10 .

Specifically, the first precursor gas supplied from the first precursor gas supply units 132a may be discharged into the first chamber 110 through a plurality of first showerheads 120a and 120b opposed to each other. The first precursor gas can be adsorbed and bonded to the surfaces of the first surface 10a and the second surface 10b of the flexible substrate 10 so that a first precursor layer (not shown) can be formed.

The purge gas supplied from the purge gas supply units 133a and 133b can be discharged into the first chamber 110. [ The first surface 10a and the second surface 10b of the flexible substrate 10 can be exposed to the purge gas. The first precursor gas that is not associated with the surface of the flexible substrate 10 can be removed by the purge gas.

The second precursor gas supplied from the first precursor gas supply units 132a and 132b may be discharged into the first chamber 110 through the first showerheads 120a and 120b. The second precursor gas may be adsorbed onto the surface of the first precursor layer. A second reactive gas layer (not shown) may be formed on the first precursor layer. The protective film 20 may be formed by a chemical reaction between the first precursor layer and the second precursor layer. The second precursor gas that has not reacted can be removed by supplying the purge gas again on the protective film 20. [ The thickness of the protective film 20 can be adjusted by alternately repeating the step of alternately exposing the flexible substrate 10 to the first precursor gas, the second precursor gas, and the purge gas.

The protective film 20 includes a first protective film 21 formed on the first surface 10a of the flexible substrate 10 and a second protective film 22 formed on the second surface 10b of the flexible substrate 10 can do. As described above, the first protective film 21 and the second protective film 22 may be formed at the same time. The thicknesses of the first protective film 21 and the second protective film 22 may be the same. The protective film 20 may include Al ₂ O ₃ , SiO ₂ , AlSiO, AlON, and SiON.

The flexible substrate 10 may include structural defects created during the fabrication of the flexible substrate 10. For example, structural defects can be bending or pitting. Structural defects of the flexible substrate 10 adversely affect reliability in deposition of a film or the like on the flexible substrate 10. When the protective film 20 is formed on the surface of the flexible substrate 10 through the atomic layer deposition process, the protective film 20 having a uniform thickness can be deposited irrespective of the structure of the surface of the flexible substrate 10. The protective film 20 may provide sufficient surface roughness to form film qualities in accordance with later processes. The protective film 20 can prevent the first oxide film 30 from being deposited unevenly due to a structural defect of the flexible substrate 10, and thus the flexibility of the transparent electrode can be improved.

The protective film 20 formed on the first surface 10a and the second surface 10b of the flexible substrate 10 can prevent the flexible substrate 10 from warping. For example, when the protective film 20 is deposited on one surface of the flexible substrate, the flexible substrate 10 may be warped by stress due to the film formed on the protective film 20 according to a subsequent process. The warping of the flexible substrate 10 may cause delamination of the films formed on the protective film 20 according to a later process. The first protective film 21 and the second protective film 22 are formed to have the same thickness so that the first surface 10a and the second surface 10b of the flexible substrate 10 are formed to have the same thickness, The stress applied to the protective film 20 can be canceled and thus the peeling of the film quality formed on the protective film 20 can be prevented.

1, 3 and 5, the surface of the protective film 20 can be modified (S20). A part of the flexible substrate 10 on which the protective film 20 is formed in the first chamber 110 can be transferred into the second chamber 210. Specifically, the blocking diaphragms 113 disposed in the inlet 111 and the outlet 112 of the first chamber 110 may be spaced apart from the flexible substrate 10. The feed roll 5 and the recovery roll 6 can rotate in the first direction D1. As the supply roll 5 and the recovery roll 6 are rotated in the first direction D1 a part of the flexible substrate 10 in which the protective film 20 is formed in the first chamber 110 is transferred to the first chamber 110 Through the exit port 112 of the second chamber 210 and positioned inside the second chamber 210. Thereafter, the atmosphere inside and outside the second chamber 210 can be separated.

Modification of the surface of the protective film 20 may be performed through the first plasma processing process PL1 within the first plasma processing module 200. [ According to one embodiment, the process gas may be supplied to the first plates 220 from the second gas supply units 230. The process gas may be discharged into the second chamber 210 through a discharge hole (not shown) included in the first plates 220.

An induction magnetic field can be formed in the second chamber 210 by supplying a high frequency of a predetermined frequency to the first plates 220 from the first power supply units 240 at a predetermined power. Accordingly, the process gas supplied into the second chamber 210 can be excited to generate a plasma. The process gas may include hydrogen. The plasma may contain hydrogen radicals. The surfaces of the first protective film 21 and the second protective film 22 may be exposed to hydrogen radicals.

According to one embodiment, before the first plasma treatment process PL1, the surface of the protective film 20 can be subjected to oxygen plasma treatment. The oxygen plasma treatment of the surface of the protective film 20 may be performed using the first plasma processing module 200 in the second chamber 210. By performing oxygen plasma treatment on the surface of the protective film 20, contaminants on the surface of the protective film 20 can be removed.

Referring to FIGS. 1, 3 and 6, a first oxide film 30 may be formed on the first surface 10a of the flexible substrate 10 (S30). That is, the first oxide film 30 may be formed on the first protective film 21. The formation of the first oxide layer 30 may be performed through a second atomic layer deposition process within the first atomic layer deposition module 100. Specifically, the supply roll 5 and the recovery roll 6 can rotate in the second direction D2. As the supply roll 5 and the recovery roll 6 are rotated in the second direction D2, a part of the plasma-treated flexible substrate 10 in the second chamber 210 is returned to the inside of the first chamber 110 Lt; / RTI >

A second atomic layer deposition process for forming the first oxide layer 30 may be performed using a third precursor gas and a fourth precursor gas. The third precursor gas and the fourth precursor gas may be discharged through the first showerhead 120a arranged to face the first surface 10a of the flexible substrate 10. [ The first oxide film 30 may be formed on the first protective film 21 by alternately exposing the first protective film 21 to the third precursor gas, the fourth precursor gas, and the purge gas. The first oxide film 30 may be a metal oxide film. For example, the first oxide film 30 may include gallium (Ga) -doped zinc oxide (ZnO: Ga). The thickness of the first oxide film 30 may be 30 to 200 nm.

By forming the first oxide film 30 using the second atomic layer deposition process, the first oxide film 30 provides sufficient surface roughness for thinly forming the metal film 40 on the first oxide film 30 . The atomic layer deposition process can bind oxygen to the oxide film surface by making the H ₂ O vapor or oxygen plasma implant the last process step.

1, 3, and 6, the surface of the first oxide film can be modified (S40). The flexible substrate 10 on which the first oxide film 30 is formed may be transferred back into the second chamber 210 before the surface of the first oxide film 30 is modified.

Modification of the surface of the first oxide film 30 may be performed through the second plasma treatment process PL2. The second plasma processing process PL2 may be performed using the first plasma processing module 200 in the second chamber 210. [ The second plasma processing process PL2 may be performed using an RF power source. The plasma treatment can be performed using hydrogen. The RF power density per processing area in the plasma treatment may be 0.15 to 1.5 W / cm < ² >. By performing the second plasma treatment process (PL2) on the surface of the first oxide film 30, the adhesion of the first oxide film 30 to the metal film 40 to be formed later can be improved. The surface of the first oxide film 30 may be modified to include an -OH functional group by the second plasma treatment process PL2. The method of forming the first oxide film 30 and the surface modification of the first oxide film 30 The effect according to the method can be as shown in Table 1.

First oxide film forming method Surface Modification Method effect Adhesion to metal film Remarks Evaporation method No surface modification Poor Natural oxidation No surface modification Poor Evaporation method Wet etching good Decrease in the thickness of the deposited oxide film, no roll-to-roll continuous process Evaporation method Hydrogen plasma good No reduction in the thickness of the deposited oxide film. Roll-to-roll continuous process possible

Referring to Table 1, since the surface of the first oxide film 30 is modified, adhesion with the metal film 40 can be improved. In addition, surface modification may be performed using a hydrogen plasma, so that a continuous roll-to-roll process may be possible, and the thickness of the first oxide film 30 may not be reduced.

According to one embodiment, the surface of the first oxide film 30 can be oxygen plasma treated before the second plasma treatment process PL2. The oxygen plasma processing may be performed using the first plasma processing module 200 in the second chamber 210. By performing the oxygen plasma treatment on the surface of the first oxide film 30, contaminants on the surface of the first oxide film 30 can be removed.

Referring to FIGS. 1, 3 and 7, a metal film 40 may be formed on the first oxide film 30. The metal film 40 may be formed on the first oxide film 30 by using a sputtering process in the first sputtering module 300. The first sputtering module 300 may be a DC-magnetron sputter.

Particularly, a part of the flexible substrate 10 including the first oxide film 30 whose surface has been modified can be transferred into the third chamber 310. An argon (Ar) atmosphere may be formed inside the third chamber 310. A DC power is supplied to the first sputter gun 320 through the second power supply unit 340 so that the first deposition film 30 can be sputtered from the target (not shown) have. Accordingly, the metal film 40 may be formed on the first oxide film 30. The metal film 40 may include Ag, Al, Cu, Au, Ni, Pt, and / or Cr.

According to one embodiment, the target in the first sputtering module 300 may comprise two or more metals. Accordingly, the metal film 40 can be formed to include two or more kinds of metals. For example, the metal film 40 may contain silver (Ag) and aluminum (Al) in a ratio of 8: 2.

The thickness w2 of the metal film 40 may be thinner than the thickness w1 of the first oxide film 30 and the thickness w3 of the second oxide film 50 to be formed later. For example, the thickness (w2) of the metal film 40 may be 1 to 20 nm. Since the metal film has a thickness smaller than that of the first oxide film 30 and the second oxide film 50, the light transmittance of the transparent electrode can be improved.

Referring to FIGS. 1, 3 and 8, a second oxide film 50 may be formed on the metal film 40. The metal film 40 may be formed on the first oxide film 30 by using a sputtering process in the second sputtering module 400. The second sputtering module may be an RF-magnetron sputter.

Particularly, a part of the flexible substrate 10 on which the metal film 40 is formed can be transferred into the fourth chamber 410. An argon (Ar) atmosphere may be formed inside the fourth chamber 410. An RF power having a predetermined frequency may be supplied to the second sputter gun 420 through the third power supply unit 440 to sputter the second deposited particles on the metal film 40. [ Accordingly, the second oxide film 50 may be formed on the metal film 40. The second oxide film 50 may be a metal oxide film. The thickness of the second oxide film 50 may be 30 to 200 nm. The second oxide film 50 may include the same material as the first oxide film 30.

Referring to FIGS. 2 and 8, a method for manufacturing a transparent electrode using the transparent electrode manufacturing apparatus of FIG. 2 according to an embodiment of the present invention will be described. For simplicity of explanation, we focus on the difference.

Referring to FIGS. 2 and 8, a transparent electrode can be manufactured using the transparent electrode manufacturing apparatus described with reference to FIG. The first protective film 21 and the second protective film 22 can be formed on the first surface 10a and the second surface 10b of the flexible substrate 10, respectively. The formation of the protective film 20 may be performed through a first atomic layer deposition process. The first atomic layer deposition process may be performed in the first chamber 110 using the first atomic layer deposition module 100.

The surface of the first protective film 21 can be modified. The modification of the surface of the first protective film 21 can be performed through the first plasma treatment process. The plasma processing process may be performed in the second chamber 210 using the first plasma processing module 200.

The first oxide film 30, the metal film 40, and the second oxide film 50 can be sequentially formed on the first protective film 21. The formation of the first oxide film 30 can be performed through a second atomic layer deposition process. The second atomic layer deposition process may be performed in the fifth chamber 510 using a second atomic layer deposition module 500.

The surface of the first oxide film 30 can be modified. The modification of the surface of the first oxide film 30 can be performed through the second plasma treatment process PL2. The second plasma processing process PL2 may be performed in the sixth chamber 610 using the second plasma processing module 600. [

The metal film 40 and the second oxide film 50 may be sequentially formed on the first oxide film 30. [ The metal film 40 and the second oxide film 50 may be formed using a sputtering process. Forming the metal film 40 may be performed in the third chamber 310 using the first sputtering module 300 and forming the second oxide film 50 may be performed using the second sputtering module 400 In the fourth chamber 410, as shown in FIG.

The transparent electrode manufacturing method according to the embodiments of the present invention can be performed in a roll-to-roll manner. For example, portions of the flexible substrate may be transferred into each chamber as the supply roll 5 and the collection roll 6 rotate, and each process may be performed simultaneously in each chamber. Thus, the production efficiency of the transparent electrode can be improved.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

Claims (15)

A method of manufacturing a transparent electrode using a roll-to-roll transparent electrode manufacturing apparatus, comprising at least one atomic layer deposition module,
Performing a first atomic layer deposition process to form a first protective film and a second protective film on the first surface of the flexible substrate and the second surface opposite to the first surface, respectively;
Performing a second atomic layer deposition process to form a first oxide film on the first protective film;
Forming a metal film on the first oxide film; And
And forming a second oxide film,
Wherein each of performing the first atomic layer deposition process and the second atomic layer deposition process comprises using the at least one atomic layer deposition module. The method according to claim 1,
Wherein the at least one atomic layer deposition module comprises a first atomic layer deposition module,
Wherein the first protective layer and the second protective layer are simultaneously formed using the first atomic layer deposition module. 3. The method of claim 2,
Wherein forming the first oxide layer comprises using the first atomic layer deposition module. The method of claim 3,
The transparent electrode manufacturing apparatus further includes a plasma processing module,
Further comprising plasma-treating the surface of the first protective film by using the plasma processing module before forming the first oxide film. 5. The method of claim 4,
Wherein the plasma treatment is performed using a hydrogen plasma. 5. The method of claim 4,
Wherein forming the first oxide layer further comprises moving the flexible substrate from the plasma processing module to the first atomic layer deposition module. 5. The method of claim 4,
Further comprising plasma-treating the surface of the first oxide film before formation of the metal film,
Wherein the plasma treatment of the surface of the first oxide film comprises using the plasma processing module. 8. The method of claim 7,
Wherein the plasma treatment is performed using a hydrogen plasma. The method according to claim 1,
Wherein the at least one atomic layer deposition module comprises a first atomic layer deposition module and a second atomic layer deposition module,
Wherein the first atomic layer deposition process is performed using the first atomic layer deposition module,
Wherein the second atomic layer deposition process is performed using the second atomic layer deposition module. 10. The method of claim 9,
The transparent electrode manufacturing apparatus further includes a plasma processing module disposed between the first and second atomic layer deposition modules,
Further comprising plasma-treating the surface of the first protective film by using the plasma processing module before forming the first oxide film. 11. The method of claim 10,
Wherein the plasma processing module is a first plasma processing module,
The transparent electrode device further includes a first plasma processing module,
Further comprising plasma-treating the surface of the first oxide film using the second plasma processing module before forming the metal film. The method according to claim 1,
The transparent electrode manufacturing apparatus further includes a first sputtering module and a second sputtering module,
Wherein the metal film is formed using the first sputtering module,
Wherein the second oxide film is formed using a second sputtering module. 13. The method of claim 12,
Wherein the first sputtering module is a DC sputtering module,
Wherein the second sputtering module is an RF sputtering module. The method according to claim 1,
Wherein the first protective film and the second protective film are formed to have substantially the same thickness. The method according to claim 1,
Wherein the thickness of the metal film is smaller than the thickness of the first oxide film and the second oxide film.

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