JP2001139808A - Polyimide precursor solution and polyimide film obtained therefrom - Google Patents

Polyimide precursor solution and polyimide film obtained therefrom

Info

Publication number
JP2001139808A
JP2001139808A JP32113199A JP32113199A JP2001139808A JP 2001139808 A JP2001139808 A JP 2001139808A JP 32113199 A JP32113199 A JP 32113199A JP 32113199 A JP32113199 A JP 32113199A JP 2001139808 A JP2001139808 A JP 2001139808A
Authority
JP
Japan
Prior art keywords
polyimide
polyimide precursor
precursor solution
film
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32113199A
Other languages
Japanese (ja)
Inventor
Shinya Takagi
伸哉 高木
Shigeki Imamura
茂樹 今村
Hisashirou Eguchi
寿史朗 江口
Akira Shigeta
朗 繁田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unitika Ltd
Original Assignee
Unitika Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unitika Ltd filed Critical Unitika Ltd
Priority to JP32113199A priority Critical patent/JP2001139808A/en
Publication of JP2001139808A publication Critical patent/JP2001139808A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a polyimide precursor solution which has a low viscosity in spite of containing solutes in a solution at a high solids content and is hard to generate bubbles when a film is formed and do not cause the deterioration of uniformity of the film by bubbles, the occurrence of pinholes and the like, and a polyimide film having excellent surface smoothness irrespective of marks, foreign substances, and irregularities of the substrate surface. SOLUTION: The polyimide precursor solution which is obtained by dissolving 3,4'-oxydianiline and 3,3',4,4'-biphenyltetracarboxylic acid and/or its derivative as the solutes in an organic solvent contains 0.001-5 pts.wt., based on 100 pts.wt. solutes, surfactant composed of a silicone oil. The polyimide film is obtained by coating this polyimide precursor solution on a substrate and heating the coated film to effect imidation and has a thickness of <=10 μm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、シリコーンオイル
からなる界面活性剤を含有するポリイミド前駆体溶液及
びそれから得られるポリイミド被膜に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polyimide precursor solution containing a surfactant composed of silicone oil and a polyimide coating obtained therefrom.

【0002】[0002]

【従来の技術】従来、半導体装置などの各種電子部品の
表面保護膜や層間絶縁膜としては電気絶縁性や高耐熱性
に優れたポリイミドが用いられている。また最近、ガラ
ス基板、あるいは透明な有機フィルム上に形成した蛍光
体に電流を流して発光させる有機エレクトロルミネッセ
ンスディスプレイ(有機ELディスプレイ)では、基板
上に陽極、有機EL層、陰極が順次積層されて構成され
るが、前記陽極と前記有機EL層の間の絶縁膜としてポ
リイミドの薄膜が使用されている。また、太陽電池に適
用される金属基板上にも絶縁保護膜としてポリイミドが
使われている。これら有機ELディスプレイや太陽電池
は積層相構造であるため、形成されたポリイミド被膜
は、10μm以下の薄膜であり、しかも均一な厚みを持
ち、ピンホールがないものが要求される。
2. Description of the Related Art Conventionally, polyimide having excellent electrical insulation and high heat resistance has been used as a surface protective film and an interlayer insulating film of various electronic components such as semiconductor devices. Recently, in an organic electroluminescence display (organic EL display) that emits light by passing a current through a phosphor formed on a glass substrate or a transparent organic film, an anode, an organic EL layer, and a cathode are sequentially laminated on the substrate. In this case, a polyimide thin film is used as an insulating film between the anode and the organic EL layer. Also, polyimide is used as an insulating protective film on a metal substrate applied to a solar cell. Since these organic EL displays and solar cells have a laminated phase structure, the formed polyimide film is required to be a thin film having a thickness of 10 μm or less, having a uniform thickness, and having no pinhole.

【0003】これらポリイミドの薄膜を形成する方法と
しては、バーコーター法や塗工液を霧状にして基板に吹
きつけるスプレーコート法、あるいは遠心力によって塗
工するスピンコート法等が知られている。しかしなが
ら、バーコーター法やスピンコート法では、ポリイミド
塗工液(ポリイミド前駆体溶液)を取り扱うときに気泡
が含まれたり、あるいは塗工液を基板に滴下するときに
気泡が含まれてしまい、形成されるポリイミド塗膜の均
一性を低下させたり、塗膜中にピンホールが形成されて
しまうといった問題があった。また、スプレーコート法
でも、霧状にして吹きつけた塗工表面に気泡が含まれや
すいという問題があった。
As a method for forming these polyimide thin films, there are known a bar coater method, a spray coating method in which a coating liquid is sprayed in the form of a mist, and a spin coating method in which coating is performed by centrifugal force. . However, in the bar coater method or the spin coating method, bubbles are included when handling the polyimide coating solution (polyimide precursor solution), or bubbles are included when the coating solution is dropped on the substrate, and the formation is performed. There are problems that the uniformity of the resulting polyimide coating film is reduced and that pinholes are formed in the coating film. In addition, the spray coating method also has a problem that air bubbles are likely to be contained on the sprayed coating surface.

【0004】一方、ポリイミド被膜を形成する際に用い
られるポリイミド塗工液は、ジメチルアセトアミドやN
−メチルピロリドンを溶媒とし、ポリアミック酸を溶解
しているポリイミド前駆体溶液であり、ポリアミック酸
の重合度が高く、溶媒への溶解度が小さいことに起因し
て溶液中の固形分比率を高くすることが困難であった。
つまり、従来のポリアミック酸をポリイミド前駆体と
し、これを溶質として溶解しているポリイミド前駆体塗
工液は、ポリアミック酸が高重合度であるが故に固形分
濃度が低いにも関わらず、粘度が高いという本質的な問
題があった。
On the other hand, a polyimide coating solution used when forming a polyimide film is dimethylacetamide or N
-A polyimide precursor solution containing methylpyrrolidone as a solvent and dissolving a polyamic acid, in which the degree of polymerization of the polyamic acid is high and the solid content ratio in the solution is high due to the low solubility in the solvent. Was difficult.
In other words, the conventional polyamic acid is used as a polyimide precursor, and a polyimide precursor coating solution in which this is dissolved as a solute has a high viscosity despite the low solid content concentration because the polyamic acid has a high degree of polymerization. There was an essential problem of being expensive.

【0005】したがって、従来のポリイミド前駆体溶液
から厚みが10μm以下で気泡やピンホールを含まない
ポリイミド薄膜を形成させようとする場合、低濃度で高
粘度であるポリイミド前駆体を希釈して溶液中の気泡を
除く必要がある。しかし、希釈すると固形分濃度が低下
しすぎてしまい、その結果塗工基板表面のわずかなキズ
や異物、凹凸の跡が被膜の表面に残り、表面平滑性を有
する均一なポリイミド被膜が得られないという問題があ
った。
Therefore, when a polyimide thin film having a thickness of 10 μm or less and containing no bubbles or pinholes is to be formed from a conventional polyimide precursor solution, a low-concentration, high-viscosity polyimide precursor is diluted to form a thin film. Must be removed. However, if diluted, the solid content concentration will be too low, and as a result, slight scratches and foreign matter on the coated substrate surface will remain on the surface of the coating, and a uniform polyimide coating having surface smoothness cannot be obtained. There was a problem.

【0006】[0006]

【発明が解決しようとする課題】上記状況に鑑み、本発
明が解決しようとする課題は、溶媒中に溶質を高い固形
分比率で含有しているにもかかわらず、低粘度であり、
被膜を形成するとき、気泡が発生しにくく、気泡による
膜の均一性の低下やピンホール等が発生しないポリイミ
ド前駆体溶液を提供すること、及びこのポリイミド前駆
体溶液から得られる気泡やピンホールを含まず、基板表
面のキズや異物や凹凸に関係なく表面平滑性に優れるポ
リイミド被膜を提供することにある。
SUMMARY OF THE INVENTION In view of the above situation, an object of the present invention is to achieve a low viscosity despite the fact that a solvent contains a solute in a high solid content ratio.
When forming a coating, it is difficult to generate bubbles, to provide a polyimide precursor solution that does not generate pinholes or the like by reducing the uniformity of the film due to bubbles, and bubbles and pinholes obtained from this polyimide precursor solution An object of the present invention is to provide a polyimide film having excellent surface smoothness irrespective of scratches, foreign matter, or irregularities on the substrate surface.

【0007】[0007]

【課題を解決するための手段】本発明者らは、上記の課
題を解決するため、鋭意検討を行った結果、有機溶剤に
特定のジアミンと特定のカルボン酸及び/又はその誘導
体を溶質として溶解していて、シリコーンオイルからな
る界面活性剤を特定量含むポリイミド前駆体溶液は高い
固形分比率を有していても低粘度であり、かつ塗工した
塗膜中に含まれる気泡を速やかに脱泡することができる
こと、そして、この溶液からは、気泡やピンホールが含
まれず、かつ基板表面のキズや異物や凹凸に関係なく表
面平滑性を有する均一なポリイミド被膜が形成できるこ
とを見いだし、本発明に到達した。
Means for Solving the Problems The present inventors have conducted intensive studies in order to solve the above-mentioned problems, and as a result, dissolved a specific diamine and a specific carboxylic acid and / or a derivative thereof in an organic solvent as a solute. The polyimide precursor solution containing a specific amount of a surfactant composed of silicone oil has a low viscosity even if it has a high solid content ratio, and quickly removes bubbles contained in the applied coating film. The present invention was found to be capable of foaming, and from this solution, it was possible to form a uniform polyimide film having no surface bubbles and no pinholes and having surface smoothness irrespective of scratches, foreign matter, or irregularities on the substrate surface. Reached.

【0008】すなわち、本発明の要旨は、第1に、下記
構造式(1)に示す3,4’−オキシジアニリンと下記
一般式(2)に示す3,3’,4,4’−ビフェニルテ
トラカルボン酸及び/又はその誘導体を溶質として有機
溶媒中に溶解していて、シリコーンオイルからなる界面
活性剤を、構造式(1)に示すジアミンと一般式(2)
に示すテトラカルボン酸及び/又はその誘導体からなる
溶質100重量部に対して、0.001〜5重量部の範
囲で含有していることを特徴とするポリイミド前駆体溶
液である。
That is, the gist of the present invention is that first, 3,4′-oxydianiline represented by the following structural formula (1) and 3,3 ′, 4,4′- represented by the following general formula (2) A biphenyltetracarboxylic acid and / or a derivative thereof is dissolved in an organic solvent as a solute, and a surfactant made of silicone oil is replaced with a diamine represented by the structural formula (1) and a general formula (2)
(1) A polyimide precursor solution characterized by containing 0.001 to 5 parts by weight with respect to 100 parts by weight of a solute composed of a tetracarboxylic acid and / or a derivative thereof shown in (1).

【0009】[0009]

【化2】 Embedded image

【0010】(式中R、R1 は各々水素原子又は炭素数
1〜5のアルキル基を示す。)
(Wherein R and R 1 each represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms)

【0011】第2に、前記ポリイミド前駆体溶液を基板
上に塗工し、加熱イミド化して得られる厚みが10μm
以下のポリイミド被膜である。
Second, the polyimide precursor solution is coated on a substrate and is imidized by heating to a thickness of 10 μm.
The following polyimide coatings.

【0012】そして、前記ポリイミド前駆体溶液におい
て、構造式(1)に示す3,4’−オキシジアニリンと
一般式(2)に示す3,3’,4,4’−ビフェニルテ
トラカルボン酸及び/又はその誘導体からなる溶質の濃
度が30〜80重量%の範囲にあり、かつ溶液粘度が1
0ポイズ以下であるポリイミド前駆体溶液は好ましい態
様のポリイミド前駆体溶液であり、この溶液を基板上に
塗工し、加熱イミド化して得られる厚みが10μm以下
のポリイミド被膜は好ましい態様のポリイミド被膜であ
る。
In the polyimide precursor solution, 3,4′-oxydianiline represented by the structural formula (1), 3,3 ′, 4,4′-biphenyltetracarboxylic acid represented by the general formula (2) and And / or the concentration of the solute composed of a derivative thereof is in the range of 30 to 80% by weight and the solution viscosity is 1%.
The polyimide precursor solution of 0 poise or less is a polyimide precursor solution of a preferred embodiment, and this solution is coated on a substrate, and a polyimide film having a thickness of 10 μm or less obtained by heat imidization is a polyimide film of a preferred embodiment. is there.

【0013】[0013]

【発明の実施の形態】以下本発明について詳細に説明す
る。まず、本発明で用いる用語について説明する。 (1)ポリイミド ポリマー鎖の繰り返し単位の80モル%以上がイミド構
造を有する有機ポリマーをいう。そして、この有機ポリ
マーは耐熱性を示す。 (2)ポリイミド前駆体 加熱又は、化学的作用により閉環してポリイミドとなる
有機化合物をいい、本発明においては、ポリイミド前駆
体溶液中の構造式(1)に示す3,4’−オキシジアニ
リンと一般式(2)に示す3,3’,4,4’−ビフェ
ニルテトラカルボン酸及び/又はその誘導体よりなる溶
質をいう。ここで、閉環とはイミド環構造が形成される
ことをいう。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. First, terms used in the present invention will be described. (1) Polyimide An organic polymer in which 80 mol% or more of the repeating unit of the polymer chain has an imide structure. And this organic polymer shows heat resistance. (2) Polyimide precursor An organic compound which becomes a polyimide by heating or undergoing a chemical action to close the ring. In the present invention, 3,4′-oxydianiline represented by the structural formula (1) in a polyimide precursor solution And 3,3 ′, 4,4′-biphenyltetracarboxylic acid and / or a derivative thereof represented by the general formula (2). Here, ring closure means that an imide ring structure is formed.

【0014】(3)ポリイミド前駆体溶液 ポリイミド前駆体が溶媒に溶解しているものである。こ
こで溶媒とは、25℃で液状の化合物をいう。 (4)粘度 (株)トキメック社製、DVL−BII型デジタル粘度計
(B型粘度計)を用い、20℃における回転粘度を測定
したものである。 (5)溶質濃度 溶液中に占めるポリイミド前駆体の重量割合を百分率で
表した数値である。 (6)ポリイミド被膜の厚み (株)ミツトヨ製デジマチックマイクロメーターを用
い、ポリイミド被膜の厚みを10箇所で測定し、その平
均値として求めたものである。
(3) Polyimide precursor solution The polyimide precursor is dissolved in a solvent. Here, the solvent refers to a compound which is liquid at 25 ° C. (4) Viscosity The rotational viscosity at 20 ° C. was measured using a DVL-BII type digital viscometer (B type viscometer) manufactured by Tokimec Co., Ltd. (5) Solute concentration It is a numerical value expressing the weight ratio of the polyimide precursor in the solution in percentage. (6) Thickness of the polyimide film The thickness of the polyimide film was measured at 10 locations using a Digimatic Micrometer manufactured by Mitutoyo Corporation, and the average value was obtained.

【0015】本発明のポリイミド前駆体溶液は、構造式
(1)に示す3,4’−オキシジアニリンと一般式
(2)に示す3,3’,4,4’−ビフェニルテトラカ
ルボン酸及び/又はその誘導体とが溶質として有機溶媒
中に溶解していて、かつシリコーンオイルからなる界面
活性剤を含有しているポリイミド前駆体溶液である。
(式中R、R1 は各々水素原子又は炭素数1〜5のアル
キル基を示す。)
The polyimide precursor solution of the present invention comprises 3,4'-oxydianiline represented by the structural formula (1) and 3,3 ', 4,4'-biphenyltetracarboxylic acid represented by the general formula (2): And / or a derivative thereof dissolved in an organic solvent as a solute and containing a surfactant composed of silicone oil.
(In the formula, R and R 1 each represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.)

【0016】これらポリイミド前駆体溶液において、一
般式(2)に示す3,3’,4,4’−ビフェニルテト
ラカルボン酸及び/又はその誘導体の一部を、一般式
(3)に示すカルボン酸又は一般式(4)に示すジカル
ボン酸無水物に置き換えてもよい。このとき、一般式
(2)に示す3,3’,4,4’−ビフェニルテトラカ
ルボン酸及び/又はその誘導体と、一般式(3)に示す
カルボン酸又は一般式(4)に示すジカルボン酸無水物
のモル比は100:0〜100:20が好ましく、10
0:0〜100:11がさらに好ましい。一般式(2)
に示す3,3’、4、4’−ビフェニルテトラカルボン
酸及び/又はその誘導体100に対する一般式(3)に
示すカルボン酸又は一般式(4)に示すジカルボン酸無
水物のモル比が20を超えると強度の高いポリイミド被
膜が得られない傾向にある。
In these polyimide precursor solutions, a part of 3,3 ′, 4,4′-biphenyltetracarboxylic acid and / or a derivative thereof represented by the general formula (2) is replaced with a carboxylic acid represented by the general formula (3). Alternatively, it may be replaced by a dicarboxylic anhydride represented by the general formula (4). At this time, 3,3 ′, 4,4′-biphenyltetracarboxylic acid and / or a derivative thereof represented by the general formula (2) is combined with a carboxylic acid represented by the general formula (3) or a dicarboxylic acid represented by the general formula (4) The molar ratio of the anhydride is preferably from 100: 0 to 100: 20,
0: 0 to 100: 11 is more preferred. General formula (2)
The molar ratio of the carboxylic acid represented by the general formula (3) or the dicarboxylic anhydride represented by the general formula (4) to 3,3 ′, 4,4′-biphenyltetracarboxylic acid and / or a derivative thereof 100 shown in FIG. If it exceeds, a polyimide film having high strength tends not to be obtained.

【0017】[0017]

【化3】 Embedded image

【0018】(式中R2 は2つのカルボニル基が隣接し
た炭素原子に直接連結している少なくとも一つの6員環
を含む2価の芳香族残基を表し、R3 は水素原子、炭素
数1〜5のアルキル基を表し、R4 は2つのカルボニル
基が隣接した炭素原子に直接連結している少なくとも一
つの6員環を含む2価の芳香族残基を表す。)
(Wherein R 2 represents a divalent aromatic residue containing at least one 6-membered ring in which two carbonyl groups are directly linked to adjacent carbon atoms, and R 3 is a hydrogen atom, a carbon atom Represents a 1 to 5 alkyl group, and R 4 represents a divalent aromatic residue containing at least one 6-membered ring in which two carbonyl groups are directly connected to adjacent carbon atoms.)

【0019】さらに、一般式(2)に示す3,3’,
4,4’−ビフェニルテトラカルボン酸及び/又はその
誘導体の一部を構造式(5)に示す3,3’,4,4’
−ビフェニルテトラカルボン酸二無水物に置き換えても
よい。このとき、一般式(2)に示す3,3’,4,
4’−ビフェニルテトラカルボン酸及び/又はその誘導
体と、構造式(5)に示す3,3’,4,4’−ビフェ
ニルテトラカルボン酸二無水物のモル比は100:0〜
70:30の範囲が好ましい。このモル比を調節するこ
とによってポリイミド前駆体溶液の粘度を微調整するこ
とができる。構造式(5)に示す3,3’,4,4’−
ビフェニルテトラカルボン酸二無水物が30モル%を超
えると本発明の特徴である低粘度のポリイミド前駆体溶
液を得ることができない傾向にある。
Further, 3,3 ′,
Part of 4,4′-biphenyltetracarboxylic acid and / or a derivative thereof is 3,3 ′, 4,4 ′ represented by the structural formula (5).
-May be replaced by biphenyltetracarboxylic dianhydride. At this time, 3,3 ′, 4 shown in the general formula (2)
The molar ratio of 4'-biphenyltetracarboxylic acid and / or a derivative thereof to 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride represented by the structural formula (5) is 100: 0 to 0.
A range of 70:30 is preferred. By adjusting this molar ratio, the viscosity of the polyimide precursor solution can be finely adjusted. 3,3 ′, 4,4′- represented by the structural formula (5)
When the amount of biphenyltetracarboxylic dianhydride exceeds 30 mol%, a polyimide precursor solution having a low viscosity, which is a feature of the present invention, tends to be unable to be obtained.

【0020】[0020]

【化4】 Embedded image

【0021】またさらに、構造式(1)に示す3,4’
−オキシジアニリンの一部を、一般式(6)に示す1官
能性のアミンに置き換えてもよい。この場合、構造式
(1)に示す3,4’−オキシジアニリンと、一般式
(6)に示すアミンのモル比は100:0〜100:2
0の範囲が好ましく、100:0〜100:11がさら
に好ましい。一般式(6)に示すアミンが20モル%を
超えると強度の高いポリイミド被膜が得られない傾向に
ある。
Further, 3,4 ′ shown in the structural formula (1)
Part of oxydianiline may be replaced by a monofunctional amine represented by the general formula (6). In this case, the molar ratio of 3,4′-oxydianiline represented by the structural formula (1) to the amine represented by the general formula (6) is 100: 0 to 100: 2.
The range of 0 is preferable, and 100: 0 to 100: 11 is more preferable. When the amount of the amine represented by the general formula (6) exceeds 20 mol%, a high-strength polyimide film tends not to be obtained.

【0022】[0022]

【化5】 Embedded image

【0023】(式中R5 は少なくとも1つの6員環を含
む芳香族残基を表す)
(Wherein R 5 represents an aromatic residue containing at least one 6-membered ring)

【0024】ポリイミド前駆体溶液中の構造式(1)に
示す3,4’−オキシジアニリンと一般式(2)に示す
3,3’,4,4’−ビフェニルテトラカルボン酸及び
/又はその誘導体からなる溶質の濃度が30〜80重量
%の範囲にあることが好ましい。濃度が30重量%より
低いと、塗工する基板表面の傷や異物が被膜表面の凹凸
として残る場合がある。一方、濃度が80重量%より高
いと、選定する溶媒の種類により溶質を安定的に溶解す
ることが困難となる場合があるので好ましくない。
In the polyimide precursor solution, 3,4'-oxydianiline represented by the structural formula (1) and 3,3 ', 4,4'-biphenyltetracarboxylic acid represented by the general formula (2) and / or It is preferable that the concentration of the solute composed of the derivative is in the range of 30 to 80% by weight. If the concentration is lower than 30% by weight, scratches or foreign substances on the surface of the substrate to be coated may remain as irregularities on the surface of the coating. On the other hand, if the concentration is higher than 80% by weight, it may be difficult to stably dissolve the solute depending on the type of the selected solvent, which is not preferable.

【0025】本発明におけるポリイミド前駆体溶液は、
構造式(1)に示す3,4’−オキシジアニリンと一般
式(2)に示す3,3’,4,4’−ビフェニルテトラ
カルボン酸及び/又はその誘導体を溶媒に添加し、シリ
コーンオイルからなる界面活性剤を添加することにより
製造することができる。添加する順序はいかなる順序で
もよい。
The polyimide precursor solution in the present invention comprises:
3,4'-oxydianiline represented by the structural formula (1) and 3,3 ', 4,4'-biphenyltetracarboxylic acid represented by the general formula (2) and / or a derivative thereof are added to a solvent, and silicone oil is added. Can be produced by adding a surfactant consisting of The order of addition may be any order.

【0026】本発明のポリイミド前駆体溶液の溶液粘度
は、10ポイズ以下が好ましい。10ポイズ以上では、
塗工液の流動性が十分ではなく、厚みが10μm以下の
被膜を作製する場合には、厚みムラが起こりやすく均一
な厚みの被膜を作製できない場合があるので好ましくな
い。
The solution viscosity of the polyimide precursor solution of the present invention is preferably 10 poise or less. With 10 poise or more,
It is not preferable to form a coating having a thickness of 10 μm or less because the fluidity of the coating liquid is not sufficient, because thickness unevenness is likely to occur and a coating having a uniform thickness cannot be formed.

【0027】ポリイミド前駆体溶液中のシリコーンオイ
ルからなる界面活性剤の含有量は、構造式(1)に示す
ジアミンと一般式(2)に示すテトラカルボン酸及び/
又はその誘導体からなる溶質100重量部に対して、
0.001〜5重量部の範囲であり、好ましくは0.0
05〜1重量部である。溶質100重量部に対して界面
活性剤が0.001重量部未満であると、得られるポリ
イミド被膜中に気泡やピンホールが発生する場合があ
り、一方、界面活性剤が5重量部を超えると、製膜性が
低下しクラックや割れが発生し、均一な被膜が得られな
い場合がある。
The content of the surfactant composed of silicone oil in the polyimide precursor solution is determined by the diamine represented by the structural formula (1) and the tetracarboxylic acid represented by the general formula (2) and / or
Or with respect to 100 parts by weight of a solute composed of a derivative thereof,
It is in the range of 0.001 to 5 parts by weight, preferably 0.0
It is 0.5 to 1 part by weight. When the amount of the surfactant is less than 0.001 part by weight based on 100 parts by weight of the solute, bubbles and pinholes may be generated in the obtained polyimide coating. On the other hand, when the amount of the surfactant exceeds 5 parts by weight. In addition, the film-forming properties may be reduced, cracks and cracks may occur, and a uniform film may not be obtained.

【0028】本発明で使用する有機溶剤は、溶質と界面
活性剤を溶解するものであれば特に限定されないが、た
とえばN−メチルピロリドン、ジメチルフォルムアミ
ド、ジメチルアセトアミド、ジメチルスルホキシド、ヘ
キサメチルホスホリルトリアミド、スルホラン、N,
N’−ジメチルイミダゾリジノン、N−メチルカプロラ
クタムなどの分子中にN,S,P原子を含む極性溶媒や
セルソルブ、フェニルセルソルブなどのセルソルブ類、
酢酸エチルセルソルブ、酢酸ブチルセルソルブなどの酢
酸セルソルブ類、メチルカルビトール、エチルカルビト
ールなどのカルビトール類、酢酸エチルカルビトール、
酢酸ブチルカルビトールなどの酢酸カルビトール類、ジ
メチルカルビトール(ジグライム)、ジエチルカルビト
ールなどのカルビトールジエーテル類、シクロヘキサノ
ール、ベンジルアルコールなどのアルコール類、シクロ
ヘキサノン、イソホロンなどのケトン類、γ―ブチロラ
クトンなどが挙げられる。
The organic solvent used in the present invention is not particularly limited as long as it dissolves a solute and a surfactant. For example, N-methylpyrrolidone, dimethylformamide, dimethylacetamide, dimethylsulfoxide, hexamethylphosphoryltriamide , Sulfolane, N,
Polar solvents containing N, S, P atoms in the molecule such as N'-dimethylimidazolidinone, N-methylcaprolactam, and cellsolves such as cellsolve and phenylcellsolve;
Ethyl acetate cellosolve, butyl acetate cellosolve such as cellosolves, methyl carbitol, carbitols such as ethyl carbitol, ethyl carbitol,
Carbitol acetates such as butyl carbitol acetate, carbitol diethers such as dimethyl carbitol (diglyme) and diethyl carbitol, alcohols such as cyclohexanol and benzyl alcohol, ketones such as cyclohexanone and isophorone, γ-butyrolactone And the like.

【0029】本発明で用いられるシリコーンオイルから
なる界面活性剤としては、シリコーンオイルの主構造で
ある下記一般式(7)に示す構造を含むものが挙げら
れ、さらにポリイミド前駆体溶液中で相分離せずに安定
して溶解するものであれば特に限定されない。
Examples of the surfactant comprising a silicone oil used in the present invention include those having a structure represented by the following general formula (7), which is the main structure of the silicone oil. There is no particular limitation as long as it dissolves stably without releasing.

【0030】[0030]

【化6】 Embedded image

【0031】(式中R6 〜R13はそれぞれ独立に水素原
子、炭素数1〜5のアルキル基、アルコキシ基ならびに
フェニル基のいずれかを表し、nは1〜10の整数を示
す。)
(In the formula, R 6 to R 13 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, an alkoxy group or a phenyl group, and n represents an integer of 1 to 10.)

【0032】本発明で使用できるシリコーンオイルから
なる界面活性剤としては、入手が容易な、たとえばシリ
コーンオイルからなるレベリング剤、消泡剤、整泡剤等
が挙げられる。
The surfactant comprising silicone oil which can be used in the present invention includes, for example, a leveling agent, an antifoaming agent, a foam stabilizer and the like, which are easily available.

【0033】本発明のポリイミド前駆体溶液の塗工方法
は、なんら限定されないが一般的なスピンコート法、ス
プレイコート法あるいはバーコーター法等の方法が挙げ
られる。そしていずれの塗工方法でも、本発明のポリイ
ミド前駆体溶液がシリコーンオイルからなる界面活性剤
を特定量含み、かつ高濃度・低粘度であるが故に、ピン
ホールや気泡を含まず、かつ基板表面のキズや異物や凹
凸に関係なく表面平滑性に優れたポリイミド被膜を得る
ことができる。特に、本発明のポリイミド前駆体溶液
は、ポリイミド被膜に気泡やピンホールを含みやすいス
ピンコート法の塗工液に好適に使用することができる。
The method for applying the polyimide precursor solution of the present invention is not particularly limited, and examples thereof include general methods such as spin coating, spray coating and bar coater. In any of the coating methods, the polyimide precursor solution of the present invention contains a specific amount of a surfactant composed of silicone oil, and has a high concentration and low viscosity. A polyimide film having excellent surface smoothness can be obtained irrespective of scratches, foreign matter, and irregularities. In particular, the polyimide precursor solution of the present invention can be suitably used as a coating solution for a spin coating method in which bubbles or pinholes are likely to be contained in a polyimide film.

【0034】本発明のポリイミド前駆体溶液を基板上に
塗工し、乾燥して溶媒を除去した後、ポリイミド前駆体
の塗膜を得、これをイミド化するとポリイミド被膜が得
られる。また、ポリイミド被膜を基板から剥離すると、
あるいはポリイミド前駆体塗膜を基板から剥離してイミ
ド化するとポリイミドフィルムが得られる。イミド化は
150℃以上、好ましくは200℃以上、より好ましく
は250℃以上で、10分以上、好ましくは30分以上
加熱して行う。
After the polyimide precursor solution of the present invention is applied on a substrate, dried and the solvent is removed, a polyimide precursor coating film is obtained and imidized to obtain a polyimide coating film. Also, when the polyimide film is peeled from the substrate,
Alternatively, when the polyimide precursor coating film is peeled off from the substrate and imidized, a polyimide film is obtained. The imidization is performed at 150 ° C. or higher, preferably 200 ° C. or higher, more preferably 250 ° C. or higher, by heating for 10 minutes or longer, preferably 30 minutes or longer.

【0035】さらに、本発明のポリイミド前駆体溶液に
は、必要に応じて例えば、有機シラン、顔料、導電性の
カーボンブラック及び金属粒子のような充填剤、摩滅
剤、誘電体、潤滑剤等の他公知の添加物を本発明の効果
を損なわない範囲で添加することができる。また、他の
重合体や例えば水不溶性のエーテル類、アルコール類、
ケトン類、エステル、ハロゲン化炭化水素類、炭化水素
類等の溶媒を本発明の効果を損なわない範囲で添加する
ことができる。
Further, the polyimide precursor solution of the present invention may contain, if necessary, fillers such as organosilane, pigment, conductive carbon black and metal particles, abrasives, dielectrics, lubricants and the like. Other known additives can be added as long as the effects of the present invention are not impaired. Also, other polymers and, for example, water-insoluble ethers, alcohols,
Solvents such as ketones, esters, halogenated hydrocarbons, and hydrocarbons can be added as long as the effects of the present invention are not impaired.

【0036】本発明のポリイミド前駆体溶液から得られ
るポリイミド被膜の厚みが10μm以下であると、積層
構造からなる太陽電池基板、EL素子、ならびにコンデ
ンサー等の層間絶縁膜として用いることができる。本発
明のポリイミド前駆体溶液から得られる被膜、特に10
μm以下の厚みの被膜においては、塗工時の気泡による
膜の均一性が損なわれず、かつピンホールを含まない、
あるいは基板表面のキズや異物や凹凸に関係無く表面平
滑性を有するために、表面保護膜、層間絶縁膜等として
好適に用いられ、例えば、太陽電池基板、EL素子、耐
熱絶縁用素子、コンデンサー等の製造に用いられる。
When the thickness of the polyimide film obtained from the polyimide precursor solution of the present invention is 10 μm or less, it can be used as an interlayer insulating film for a solar cell substrate having a laminated structure, an EL element, a capacitor and the like. Coating obtained from the polyimide precursor solution of the present invention, particularly 10
In a coating having a thickness of μm or less, uniformity of the coating due to bubbles at the time of coating is not impaired, and does not include pinholes.
Alternatively, it has a surface smoothness irrespective of scratches, foreign matter, or irregularities on the substrate surface, and is therefore suitably used as a surface protective film, an interlayer insulating film, and the like. Used in the manufacture of

【0037】[0037]

【実施例】以下、本発明を実施例を用いて具体的に説明
するが、本発明はこれら実施例により限定されない。
EXAMPLES Hereinafter, the present invention will be described specifically with reference to examples, but the present invention is not limited to these examples.

【0038】実施例1 溶媒としてのN−メチルピロリドン228.242gに
3,3’,4,4’−ビフェニルテトラカルボン酸二無
水物100g(339.88mmol)を溶解し、次い
でメタノール22.868g(713.748mmo
l)とトリエチルアミン1.72g(16.994mm
ol)を添加した。この溶液を温水浴にて液温80℃
で、攪拌下2時間にてエステル化反応させ、3,3’,
4,4’−ビフェニルテトラカルボン酸ジメチルエステ
ルを得た。この反応溶液を50℃まで冷却した後、3,
4’−オキシジアニリン68.04g(339.88m
mol)を添加し、2時間攪拌溶解し、均一なポリイミ
ド前駆体溶液を得た。さらに、シリコーンオイルからな
る界面活性剤SH193(東レダウコーニング社製シリ
コーン整泡剤)を、得られたポリイミド前駆体溶液の固
形分に対して0.5重量%である0.955gを添加
し、25℃にて系が均一になるまで攪拌し、溶解させ、
ポリイミド前駆体溶液(黒色)を得た(固形分濃度45
重量%)。この溶液の粘度を測定したところ、20℃で
2ポイズであった。さらにこの溶液をスピンコーター
〔ミカサ(株)社製、1H−DX〕を用いて回転数30
00rpmにて4インチ−シリコン基板上に塗工し、そ
の後、窒素雰囲気下80℃で5時間乾燥した後、窒素雰
囲気下300℃で5時間加熱イミド化を行い、厚み2μ
mのポリイミド被膜を得た。このポリイミド被膜のウエ
ハ面内のピンホールは観察されなかった。
Example 1 100 g (339.88 mmol) of 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride was dissolved in 228.242 g of N-methylpyrrolidone as a solvent, and then 22.868 g of methanol (22.868 g). 713.748mmo
l) and 1.72 g of triethylamine (16.994 mm
ol) was added. This solution was heated at a temperature of 80 ° C in a hot water bath.
Then, the esterification reaction was carried out for 2 hours with stirring, and the 3,3 ′,
4,4'-biphenyltetracarboxylic acid dimethyl ester was obtained. After cooling the reaction solution to 50 ° C.,
68.04 g of 4'-oxydianiline (339.88 m
mol) was added and stirred and dissolved for 2 hours to obtain a uniform polyimide precursor solution. Further, 0.955 g, which is 0.5% by weight based on the solid content of the obtained polyimide precursor solution, was added to a surfactant SH193 (a silicone foam stabilizer manufactured by Dow Corning Toray Co., Ltd.) composed of silicone oil, Stir and dissolve at 25 ° C until the system is homogeneous,
A polyimide precursor solution (black) was obtained (solid concentration 45
weight%). When the viscosity of this solution was measured, it was 2 poise at 20 ° C. The solution was further rotated at 30 rpm using a spin coater (1H-DX, manufactured by Mikasa Corporation).
After coating on a 4-inch silicon substrate at 00 rpm, and then drying at 80 ° C. for 5 hours in a nitrogen atmosphere, heat imidization was performed at 300 ° C. for 5 hours in a nitrogen atmosphere to give a thickness of 2 μm.
m was obtained. No pinhole in the wafer surface of this polyimide film was observed.

【0039】実施例2 実施例1で得られたポリイミド前駆体溶液を、塗工基板
を直径100mmのガラス基板にする以外は全て実施例
1と同様な方法でポリイミド被膜を形成させた。なお、
3次元表面粗さ測定装置(小阪研究所社製 ET−30
K)で測定したガラス基板の中心面平均粗さ(SRa)
は、50nmであった。得られたポリイミド被膜の膜厚
は、2μmであり、ピンホールは観察されなかった。ま
た、SRaは1.2nmであり、このポリイミド前駆体
溶液から得られるポリイミド被膜は、ピンホールが含ま
れずかつ表面平滑性に優れるものであった。
Example 2 A polyimide coating was formed from the polyimide precursor solution obtained in Example 1 in the same manner as in Example 1 except that the coated substrate was a glass substrate having a diameter of 100 mm. In addition,
3D surface roughness measuring device (ET-30 manufactured by Kosaka Laboratory Co., Ltd.)
Center plane average roughness of glass substrate measured in K) (SRa)
Was 50 nm. The thickness of the obtained polyimide film was 2 μm, and no pinhole was observed. The SRa was 1.2 nm, and the polyimide coating obtained from this polyimide precursor solution did not contain pinholes and had excellent surface smoothness.

【0040】実施例3 溶媒であるN−メチルピロリドンの重量を190.90
8gにする以外は全て実施例1と同様の仕込みと条件で
反応を行い、ポリイミド前駆体溶液(黒色)を得た(固
形分濃度50重量%)。この溶液の粘度を測定したとこ
ろ、20℃で7ポイズであった。さらにこの溶液をスピ
ンコーター〔ミカサ(株)社製、1H−DX〕を用いて
回転数1000rpmにて直径100mmのガラス基板
上(SRa30nm)に塗工し、その後、窒素雰囲気下
80℃で5時間乾燥した後、窒素雰囲気下300℃で5
時間加熱イミド化を行い、厚み8μmのポリイミド被膜
を得た。このポリイミド被膜のウエハ面内のピンホール
は観察されなかった。また、SRaは1.0nmであっ
た。
Example 3 The weight of the solvent, N-methylpyrrolidone, was 190.90.
The reaction was carried out under the same preparation and conditions as in Example 1 except that the amount was changed to 8 g, to obtain a polyimide precursor solution (black) (solid content concentration: 50% by weight). The viscosity of the solution was 7 poise at 20 ° C. Further, this solution was applied on a glass substrate having a diameter of 100 mm (SRa 30 nm) at a rotation speed of 1000 rpm by using a spin coater [1H-DX manufactured by Mikasa Corporation], and then at 80 ° C. for 5 hours in a nitrogen atmosphere. After drying, 5 minutes at 300 ° C under nitrogen atmosphere
Heat imidization was carried out for an hour to obtain a polyimide film having a thickness of 8 μm. No pinhole in the wafer surface of this polyimide film was observed. Further, SRa was 1.0 nm.

【0041】実施例4 シリコーンオイルからなる界面活性剤をBYK−302
〔ビッグケミー・ジャパン(株)社製〕にする以外は全
て実施例1と同様の仕込みと条件で反応を行い、ポリイ
ミド前駆体溶液(黒色)を得た(固形分濃度45重量
%)。この溶液の粘度を測定したところ、20℃で2ポ
イズであった。さらにこの溶液を実施例1と同様な方法
ならびに同様な条件で4インチ−シリコンウエハ基板上
にポリイミド被膜を形成させた。得られたポリイミド被
膜の厚みは2μmで、ウエハ面内のピンホールは観察さ
れなかった。
Example 4 A surfactant composed of silicone oil was used as BYK-302.
The reaction was carried out under the same preparation and conditions as in Example 1 except that [Big Chemie Japan Co., Ltd.] was used to obtain a polyimide precursor solution (black) (solid content: 45% by weight). When the viscosity of this solution was measured, it was 2 poise at 20 ° C. Further, this solution was used to form a polyimide film on a 4-inch silicon wafer substrate in the same manner and under the same conditions as in Example 1. The thickness of the obtained polyimide film was 2 μm, and no pinhole in the wafer surface was observed.

【0042】実施例5 シリコーンオイルからなる界面活性剤をKP340〔信
越化学工業(株)製〕にする以外は全て実施例1と同様
の仕込みと条件で反応を行い、ポリイミド前駆体溶液
(黒色)を得た(固形分濃度45重量%)。この溶液の
粘度を測定したところ、20℃で2ポイズであった。さ
らにこの溶液を実施例1と同様な方法ならびに条件で4
インチ−シリコンウエハ基板上にポリイミド被膜を形成
させた。得られたポリイミド被膜の厚みは2μmで、ウ
エハ面内のピンホールは観察されなかった。
Example 5 A polyimide precursor solution (black) was prepared by conducting the reaction under the same conditions and conditions as in Example 1 except that the surfactant composed of silicone oil was changed to KP340 (manufactured by Shin-Etsu Chemical Co., Ltd.). (Solid content: 45% by weight). When the viscosity of this solution was measured, it was 2 poise at 20 ° C. Further, this solution was prepared in the same manner and under the same conditions as in Example 1.
A polyimide coating was formed on an inch-silicon wafer substrate. The thickness of the obtained polyimide film was 2 μm, and no pinhole in the wafer surface was observed.

【0043】実施例6 シリコーンオイルからなる界面活性剤をBYK−333
(ビッグケミー・ジャパン(株)製〕にする以外は全て
実施例1と同様の仕込みと条件で反応を行い、ポリイミ
ド前駆体溶液(黒色)を得た(固形分濃度45重量
%)。この溶液の粘度を測定したところ、20℃で2ポ
イズであった。さらにこの溶液を実施例1と同様な方法
ならびに条件で4インチ−シリコンウエハ基板上にポリ
イミド被膜を形成させた。得られたポリイミド被膜の厚
みは2μmで、ウエハ面内のピンホールは観察されなか
った。
Example 6 A surfactant consisting of silicone oil was used as BYK-333.
The reaction was carried out under the same preparation and conditions as in Example 1 except that (made by Big Chemie Japan Co., Ltd.), to obtain a polyimide precursor solution (black) (solid content concentration: 45% by weight). The viscosity was measured and found to be 2 poise at 20 ° C. Further, this solution was used to form a polyimide coating on a 4-inch silicon wafer substrate in the same manner and under the same conditions as in Example 1. The thickness was 2 μm, and no pinhole in the wafer surface was observed.

【0044】比較例1 シリコーンオイルからなる界面活性剤を添加しない以外
は全て実施例1と同様の仕込みと条件で反応を行い、ポ
リイミド前駆体溶液(黒色)を得た(固形分濃度45重
量%)。この溶液の粘度を測定したところ、20℃で2
ポイズであった。さらにこの溶液を実施例1と同様な方
法ならびに条件で4インチ−シリコンウエハ基板上にポ
リイミド被膜を形成させた。得られたポリイミド被膜の
厚みは2μmで、ウエハ面内でピンホールが8個観察さ
れた。
Comparative Example 1 A reaction was carried out under the same preparation and conditions as in Example 1 except that the surfactant consisting of silicone oil was not added to obtain a polyimide precursor solution (black) (solid content: 45% by weight). ). When the viscosity of this solution was measured,
Poise. Further, this solution was used to form a polyimide film on a 4-inch silicon wafer substrate in the same manner and under the same conditions as in Example 1. The thickness of the obtained polyimide film was 2 μm, and eight pinholes were observed in the wafer surface.

【0045】比較例2 シリコーンオイルからなる界面活性剤の添加量を固形分
に対して7%(13.37g)にする以外は全て実施例
1と同様の仕込みと条件で反応を行い、ポリイミド前駆
体溶液(黒色)を得た(固形分濃度45重量%)。この
溶液の粘度を測定したところ、20℃で1.2ポイズで
あった。さらにこの溶液を実施例1と同様な方法ならび
に条件で4インチ−シリコンウエハ基板上にポリイミド
被膜を形成させた。得られたポリイミド被膜はクラック
や割れが発生し、均一な被膜を得ることができなかっ
た。
Comparative Example 2 The reaction was carried out under the same preparation and conditions as in Example 1 except that the amount of the surfactant composed of silicone oil was changed to 7% (13.37 g) with respect to the solid content. A body solution (black) was obtained (solid content: 45% by weight). When the viscosity of this solution was measured, it was 1.2 poise at 20 ° C. Further, this solution was used to form a polyimide film on a 4-inch silicon wafer substrate in the same manner and under the same conditions as in Example 1. Cracks and cracks occurred in the obtained polyimide coating, and a uniform coating could not be obtained.

【0046】比較例3 溶媒としてのN−メチルピロリドン392.093gに
3,3’,4,4’−ビフェニルテトラカルボン酸二無
水物100g(339.88mmol)を溶解し、室温
に保った。次いで前記溶液に3,4’−オキシジアニリ
ン68.04g(339.88mmol)を2時間にわ
たり徐々に添加し、さらに6時間攪拌を続けたところ,
溶液はゲル化した。(固形分30重量%)
Comparative Example 3 100 g (339.88 mmol) of 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride was dissolved in 392.093 g of N-methylpyrrolidone as a solvent and kept at room temperature. Next, 68.04 g (339.88 mmol) of 3,4′-oxydianiline was gradually added to the solution over 2 hours, and stirring was further continued for 6 hours.
The solution gelled. (Solid content 30% by weight)

【0047】[0047]

【発明の効果】以上のように、本発明のポリイミド前駆
体溶液は、溶媒中に溶質を高い固形分比率で含有してい
るにもかかわらず、低粘度であり、かつシリコーンオイ
ルからなる界面活性剤を含んでいるので、被膜を形成す
るとき、気泡が発生しにくく、気泡による膜の均一性の
低下やピンホール等が発生しない。また、本発明のポリ
イミド被膜は、気泡やピンホールを含まず、基板表面の
キズや異物や凹凸に関係なく表面平滑性に優れる。
As described above, the polyimide precursor solution of the present invention has a low viscosity and a surface active agent composed of silicone oil, despite the fact that the solute is contained in the solvent at a high solid content ratio. Since it contains the agent, bubbles are hardly generated when forming a film, and the uniformity of the film is not reduced by the bubbles, and pinholes are not generated. Further, the polyimide coating of the present invention does not contain bubbles or pinholes, and has excellent surface smoothness regardless of scratches, foreign matter, or irregularities on the substrate surface.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 繁田 朗 京都府宇治市宇治小桜23番地 ユニチカ株 式会社中央研究所内 Fターム(参考) 4J002 CM041 CP032 FD312 GH02 GQ01 4J038 DJ021 DJ031 NA14 NA21 PB09  ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Akira Shigeta 23 Uji Kozakura, Uji City, Kyoto Prefecture Unitika Central Research Laboratory F-term (reference) 4J002 CM041 CP032 FD312 GH02 GQ01 4J038 DJ021 DJ031 NA14 NA21 PB09

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 下記構造式(1)に示す3,4’−オキ
シジアニリンと下記一般式(2)に示す3,3’,4,
4’−ビフェニルテトラカルボン酸及び/又はその誘導
体を溶質として有機溶媒中に溶解していて、シリコーン
オイルからなる界面活性剤を、構造式(1)に示すジア
ミンと一般式(2)に示すテトラカルボン酸及び/又は
その誘導体からなる溶質100重量部に対して、0.0
01〜5重量部の範囲で含有していることを特徴とする
ポリイミド前駆体溶液。 【化1】 (式中R、R1 は各々水素原子又は炭素数1〜5のアル
キル基を示す。)
1. A 3,4′-oxydianiline represented by the following structural formula (1) and a 3,3 ′, 4 represented by the following general formula (2).
4′-biphenyltetracarboxylic acid and / or a derivative thereof is dissolved in an organic solvent as a solute, and a surfactant composed of silicone oil is replaced with a diamine represented by the structural formula (1) and a tetraol represented by the general formula (2). With respect to 100 parts by weight of a solute composed of a carboxylic acid and / or a derivative thereof, 0.0
A polyimide precursor solution, which is contained in the range of 01 to 5 parts by weight. Embedded image (In the formula, R and R 1 each represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.)
【請求項2】 構造式(1)に示す3,4’−オキシジ
アニリンと一般式(2)に示す3,3’,4,4’−ビ
フェニルテトラカルボン酸及び/又はその誘導体からな
る溶質の濃度が30〜80重量%の範囲にあり、かつ溶
液粘度が10ポイズ以下である請求項1記載のポリイミ
ド前駆体溶液。
2. A solute comprising 3,4′-oxydianiline represented by the structural formula (1) and 3,3 ′, 4,4′-biphenyltetracarboxylic acid represented by the general formula (2) and / or a derivative thereof. The polyimide precursor solution according to claim 1, wherein the concentration of the polyimide precursor is in the range of 30 to 80% by weight and the solution viscosity is 10 poise or less.
【請求項3】 請求項1又は2記載のポリイミド前駆体
溶液を基板上に塗工し、加熱イミド化して得られる厚み
が10μm以下であるポリイミド被膜。
3. A polyimide film having a thickness of 10 μm or less obtained by applying the polyimide precursor solution according to claim 1 or 2 on a substrate and heating and imidizing the solution.
JP32113199A 1999-11-11 1999-11-11 Polyimide precursor solution and polyimide film obtained therefrom Pending JP2001139808A (en)

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JP2006022173A (en) * 2004-07-07 2006-01-26 Mitsubishi Gas Chem Co Inc Composition for forming film, method for forming film and method for processing film
JP2011057880A (en) * 2009-09-11 2011-03-24 Sumitomo Bakelite Co Ltd Resin varnish, resin film, semiconductor device and displaying device
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006022173A (en) * 2004-07-07 2006-01-26 Mitsubishi Gas Chem Co Inc Composition for forming film, method for forming film and method for processing film
JP2011057880A (en) * 2009-09-11 2011-03-24 Sumitomo Bakelite Co Ltd Resin varnish, resin film, semiconductor device and displaying device
US9024312B2 (en) 2009-09-30 2015-05-05 Dai Nippon Printing Co., Ltd. Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
KR20160130876A (en) 2009-09-30 2016-11-14 다이니폰 인사츠 가부시키가이샤 Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
KR20150068442A (en) 2012-11-08 2015-06-19 아사히 가세이 이-매터리얼즈 가부시키가이샤 Substrate for flexible device, flexible device and method for producing same, laminate and method for producing same, and resin composition
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