JP2001135858A - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting deviceInfo
- Publication number
- JP2001135858A JP2001135858A JP31109999A JP31109999A JP2001135858A JP 2001135858 A JP2001135858 A JP 2001135858A JP 31109999 A JP31109999 A JP 31109999A JP 31109999 A JP31109999 A JP 31109999A JP 2001135858 A JP2001135858 A JP 2001135858A
- Authority
- JP
- Japan
- Prior art keywords
- light
- lens
- light source
- light emitting
- point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Optical Transform (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高分解能が要求さ
れるエンコ−ダの発光部として安価に対応できる構成と
した半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device having a structure which can be used at a low cost as a light emitting portion of an encoder which requires high resolution.
【０００２】[0002]
【従来の技術】光学装置を用いたフォトエンコ−ダとし
て、物体の移動速度を検出するリニアエンコ−ダや回転
角度を検出するロ−タリ−エンコ−ダが知られている。
このようなフォトエンコ−ダ用の光学装置の例として、
発光部に発光ダイオ−ド（ＬＥＤ）のような半導体発光
装置を使用し、受光部にはホトダイ−ドのような半導体
受光装置を使用する場合がある。2. Description of the Related Art As a photo encoder using an optical device, a linear encoder for detecting a moving speed of an object and a rotary encoder for detecting a rotation angle are known.
As an example of such an optical device for a photo encoder,
In some cases, a semiconductor light emitting device such as a light emitting diode (LED) is used for the light emitting unit, and a semiconductor light receiving device such as a photodiode is used for the light receiving unit.
【０００３】図３は、前記ＬＥＤの一例を示す概略の正
面図である。図３において、１はＬＥＤ素子、２、３は
一対のリ−ド端子、４は金属線である。ＬＥＤ素子１の
一方の電極１ａを金属線４と接続し、金属線４はリ−ド
端子３にワイヤボンデングで電気的に接続される。FIG. 3 is a schematic front view showing an example of the LED. In FIG. 3, 1 is an LED element, 2 and 3 are a pair of lead terminals, and 4 is a metal wire. One electrode 1a of the LED element 1 is connected to a metal wire 4, and the metal wire 4 is electrically connected to the lead terminal 3 by wire bonding.
【０００４】また、図示されていないがＬＥＤ素子１の
電極１ａと反対側に電極を形成し、当該電極はリ−ド端
子２にダイボンデングで電気的に接続される。５は透光
性樹脂材からなるモ−ルド部で、ＬＥＤ素子１と金属線
４を封止する。このようにして、エンコ−ダ用のＬＥＤ
２０が形成される。このＬＥＤ２０は、例えば赤外線を
発光するように構成されている。Although not shown, an electrode is formed on the LED element 1 on the side opposite to the electrode 1a, and the electrode is electrically connected to the lead terminal 2 by die bonding. Reference numeral 5 denotes a mold portion made of a translucent resin material, which seals the LED element 1 and the metal wire 4. Thus, the LED for the encoder
20 are formed. The LED 20 is configured to emit, for example, infrared light.
【０００５】図４は、図３の構成のＬＥＤ２０をリニア
エンコ−ダとして用いる例を示す説明図である。図４に
おいて、１０はレンズを用いた光学系、１１は多数のス
リットａ〜ｎが形成されている矩形状の測定板、１２は
ホトダイオ−ドのような受光素子を用いた受光部、１３
は信号線、１４は信号処理部である。FIG. 4 is an explanatory diagram showing an example in which the LED 20 having the configuration shown in FIG. 3 is used as a linear encoder. In FIG. 4, reference numeral 10 denotes an optical system using a lens, 11 denotes a rectangular measuring plate in which a number of slits a to n are formed, 12 denotes a light receiving unit using a light receiving element such as a photodiode, 13
Is a signal line, and 14 is a signal processing unit.
【０００６】ＬＥＤ２０は面光源として作用し、ＬＥＤ
２０の発光面側のモ−ルド部５からＬｘの幅の出力光が
発射される。光学系１０は、ＬＥＤ２０から発射された
Ｌｘの幅の出力光を集光し、点光源に変換して光束Ｌｙ
として受光部１２に向けて進行させる。The LED 20 functions as a surface light source,
Output light having a width of Lx is emitted from the mold section 5 on the light emitting surface side of the light emitting element 20. The optical system 10 condenses the output light having the width of Lx emitted from the LED 20, converts the output light into a point light source, and converts the light into a light flux Ly.
To the light receiving section 12.
【０００７】測定板１１を矢視Ａ方向に移動させると、
受光部１２は測定板１１に形成されているスリットａ〜
ｎの有無に応じて光束Ｌｙを受光または遮光する。受光
部１２で受光または遮光した信号を信号処理部１４で適
宜処理してパルス波形を形成し、１周期のパルス数をカ
ウントすると測定板１１の移動速度が検出できる。When the measuring plate 11 is moved in the direction of arrow A,
The light receiving unit 12 includes slits a to
The light beam Ly is received or blocked according to the presence or absence of n. The signal received or blocked by the light receiving unit 12 is appropriately processed by the signal processing unit 14 to form a pulse waveform, and when the number of pulses in one cycle is counted, the moving speed of the measuring plate 11 can be detected.
【０００８】直線状に移動する矩形状の測定板１１に代
えて、円周上に多数のスリットを形成した回転板を光学
系１０と受光部１２との間に配置して回転させ、受光部
１２で受光または遮光した信号を信号処理部１４で適宜
処理することにより回転板の回転角度を検出する、ロ−
タリ−エンコ−ダを構成することができる。Instead of the rectangular measuring plate 11 moving linearly, a rotating plate having a number of slits formed on the circumference is arranged between the optical system 10 and the light receiving unit 12 and rotated. A signal processing unit 14 appropriately processes the signal received or shielded at 12 to detect the rotation angle of the rotating plate.
A tally encoder can be configured.
【０００９】[0009]
【発明が解決しようとする課題】このように、従来のエ
ンコ−ダにおいてはＬＥＤのような面光源の半導体発光
装置から発射される出力光を光学系で集光して点光源に
変換しているが、精密な点光源に変換するためには光学
系に多数のレンズを使用しなければならず、コストが高
くなるという問題があった。As described above, in the conventional encoder, output light emitted from a semiconductor light emitting device of a surface light source such as an LED is condensed by an optical system and converted into a point light source. However, in order to convert the light into a precise point light source, a large number of lenses must be used in the optical system, and there has been a problem that the cost increases.
【００１０】光学系で点光源に変換されない状態の光束
を測定板に向けて進行させると分解能が悪くなり、特に
測定板に微細なスリットを形成し、光束を受光または遮
光して信号を形成することにより高い分解能の信号処理
を行なうエンコ−ダには対応できないという問題があっ
た。また、レ−ザ光によりエンコ−ダ用の点光源を得る
ことは可能であるが、この場合にもコストが高くなると
いう問題があった。When a light beam which is not converted into a point light source by the optical system is advanced toward the measuring plate, the resolution deteriorates. In particular, a fine slit is formed in the measuring plate, and a signal is formed by receiving or blocking the light beam. As a result, there is a problem that it is not possible to cope with an encoder which performs signal processing with high resolution. Further, it is possible to obtain a point light source for an encoder by using laser light, but in this case, there is a problem that the cost is increased.
【００１１】本発明はこのような問題に鑑み、高分解能
が要求されるエンコ−ダの発光部として安価に対応でき
る構成とした半導体発光装置の提供を目的とする。The present invention has been made in view of the above problems, and has as its object to provide a semiconductor light emitting device having a configuration which can be inexpensively used as a light emitting section of an encoder which requires high resolution.
【００１２】[0012]
【課題を解決するための手段】本発明の上記目的は、半
導体発光装置を、側面に形成される発光層を線光源の光
源として用いる半導体発光素子と、前記半導体発光素子
を封止する透光性樹脂材からなるモ−ルド部とを備え、
半導体発光素子の前記線光源の光源から受光素子に向け
て出力光が発射されるモ−ルド部の面をド−ム状に外側
に突出させてレンズを形成し、前記レンズで線光源の光
源を多数の点光源の光源に変換し、当該レンズに形成さ
れた多数の点光源から平行な出力光を発射する構成とす
ることによって達成される。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor light emitting device using a light emitting layer formed on a side surface as a light source of a line light source, and a light transmitting device for sealing the semiconductor light emitting device. A mold part made of a conductive resin material,
A lens is formed by protruding a surface of a mold part from which the output light is emitted from the light source of the line light source of the semiconductor light emitting element toward the light receiving element outward in a dome shape, and the lens serves as a light source of the line light source. Is converted into light sources of a number of point light sources, and parallel output light is emitted from the number of point light sources formed on the lens.
【００１３】本発明の上記特徴によれば、透光性樹脂材
からなるモ−ルド部でレンズを形成し、このレンズで線
光源の光源を多数の点光源の光源に変換している。この
ようなレンズに形成される多数の点光源から平行な出力
光が発射されるので、微細なスリットが形成されている
測定板を移動させた際に、受光部では受光または遮光を
精度良く行なうことができる。このため、本発明の半導
体発光装置を高分解能の信号処理が要求されるエンコ−
ダの発光部として対応させることができる。According to the above-mentioned feature of the present invention, a lens is formed by a mold portion made of a translucent resin material, and the lens converts a light source of a linear light source into a light source of a plurality of point light sources. Since parallel output light is emitted from a large number of point light sources formed in such a lens, the light receiving unit accurately receives or blocks light when the measuring plate on which the fine slit is formed is moved. be able to. For this reason, the semiconductor light emitting device of the present invention is required to be an encoder which requires high-resolution signal processing.
It can be made to correspond as a light emitting part of a die.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態につい
て図を参照して説明する。図１は本発明の実施の形態に
係る半導体発光装置の例を示す側面図、図２は正面図で
ある。図１において、ＬＥＤ素子１ｘには、アノ−ド電
極１ａ、カソ−ド電極１ｂ、ｎ形半導体１ｃ、ｐ形半導
体１ｅが設けられており、ｎ形半導体１ｃとｐ形半導体
１ｅの接合部には発光層１ｄが形成されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a side view showing an example of a semiconductor light emitting device according to an embodiment of the present invention, and FIG. 2 is a front view. In FIG. 1, an LED element 1x is provided with an anode electrode 1a, a cathode electrode 1b, an n-type semiconductor 1c, and a p-type semiconductor 1e, and is provided at a junction between the n-type semiconductor 1c and the p-type semiconductor 1e. Has a light emitting layer 1d.
【００１５】ＬＥＤ１の透光性樹脂材からなるモ−ルド
部５には、ＬＥＤ素子１ｘの発光層１ｄと対向し、受光
素子に対して出力光を発射する面を外側に向けてド−ム
状に突出するレンズ５ａを形成する。ＬＥＤ素子１ｘの
側面に形成されている発光層１ｄから前方に向けて異な
る角度で発射される出力光は、モ−ルド部５に形成され
たレンズ５ａで多数の点光源に変換される。この多数の
点光源から平行な光束Ｌａが形成され受光部に向けて進
行する。In the mold section 5 made of a translucent resin material of the LED 1, a dome facing the light emitting layer 1d of the LED element 1x and emitting light toward the light receiving element faces outward. A lens 5a protruding in a shape is formed. Output light emitted from the light emitting layer 1d formed on the side surface of the LED element 1x at different angles toward the front is converted into a number of point light sources by the lens 5a formed in the mold unit 5. A parallel light beam La is formed from the many point light sources, and travels toward the light receiving section.
【００１６】この平行光束Ｌａは、前記のように測定板
１１ｘの移動方向Ａからみるとレンズ５ａの各点におい
て点光源から出力されるものである。すなわち、本発明
においてはモ−ルド部５に形成されたレンズ５ａに多数
の点光源を形成し、この点光源から平行に発射される出
力光に対して多数のスリットを形成した測定板１１ｘを
移動させて、受光部で遮光、受光の信号を形成して測定
板１１ｘの移動速度を測定するものである。The parallel light beam La is output from the point light source at each point of the lens 5a when viewed from the moving direction A of the measuring plate 11x as described above. That is, in the present invention, a measuring plate 11x in which a large number of point light sources are formed on the lens 5a formed in the mold section 5 and a large number of slits are formed for output light emitted in parallel from the point light source. It is moved to form a light-shielding and light-receiving signal at the light receiving unit, and the moving speed of the measuring plate 11x is measured.
【００１７】このように発光部には多数の点光源が形成
されているので、測定板１１ｘにａ〜Ｎの微細なスリッ
トが形成されている場合でも、測定板１１ｘを矢視Ａ方
向に移動させた際に、受光部では受光または遮光を精度
良く行なえ、高分解能で信号処理することができる。As described above, since a large number of point light sources are formed in the light emitting portion, the measuring plate 11x is moved in the direction of arrow A even when fine slits a to N are formed in the measuring plate 11x. In this case, the light receiving section can accurately receive or block light, and can perform signal processing with high resolution.
【００１８】したがって、図１の構成のＬＥＤ１によれ
ば高分解能の信号処理が要求されるエンコ−ダに対して
も発光部として対応することができる。一例として、レ
ンズ５ａの点光源からは、１インチあたり１５０本の多
数の平行な出力光を形成することができる。Therefore, according to the LED 1 having the configuration shown in FIG. 1, it is possible to cope with an encoder that requires high-resolution signal processing as a light emitting unit. As an example, from the point light source of the lens 5a, a large number of 150 parallel output lights per inch can be formed.
【００１９】[0019]
【発明の効果】以上説明したように、本発明の上記特徴
によれば、透光性樹脂材からなるモ−ルド部でレンズを
形成し、このレンズで線光源の光源を多数の点光源の光
源に変換している。このようなレンズに形成される多数
の点光源から平行な出力光が発射されるので、微細なス
リットが形成されている測定板を移動させた際に、受光
部では受光または遮光を精度良く行なうことができる。
このため、本発明の半導体発光装置を高分解能の信号処
理が要求されるエンコ−ダの発光部として対応させるこ
とができる。As described above, according to the above-mentioned feature of the present invention, a lens is formed by a mold portion made of a translucent resin material, and the lens is used as a linear light source by a plurality of point light sources. Converted to light source. Since parallel output light is emitted from a large number of point light sources formed in such a lens, the light receiving unit accurately receives or blocks light when the measuring plate on which the fine slit is formed is moved. be able to.
For this reason, the semiconductor light emitting device of the present invention can be used as a light emitting unit of an encoder that requires high-resolution signal processing.
【図１】本発明の実施の形態に係る半導体発光装置を示
す側面図である。FIG. 1 is a side view showing a semiconductor light emitting device according to an embodiment of the present invention.
【図２】図１の正面図である。FIG. 2 is a front view of FIG.
【図３】従来の半導体発光装置を示す正面図である。FIG. 3 is a front view showing a conventional semiconductor light emitting device.
【図４】半導体発光装置をリニアエンコ−ダとして使用
する例の説明図である。FIG. 4 is an explanatory diagram of an example in which the semiconductor light emitting device is used as a linear encoder.
１ 発光ダイオ−ド（ＬＥＤ） １ｘ ＬＥＤ素子 １ｃ ｎ形半導体 １ｄ 発光層 １ｅ ｐ形半導体 ２、３ リ−ド端子 ４ 金属線 ５ 透光性樹脂材からなるモ−ルド部 ５ａ レンズ １０ 光学系 １１ｘ 測定板 １２ 受光部 １３ 信号線 １４ 信号処理部 ａ〜Ｎ スリット ａ〜ｎ 従来例のスリット Ｌａ、Ｌｘ、Ｌｙ 光束 Reference Signs List 1 light-emitting diode (LED) 1x LED element 1c n-type semiconductor 1d light-emitting layer 1ep p-type semiconductor 2, 3 lead terminal 4 metal wire 5 mold part made of translucent resin material 5a lens 10 optical system 11x Measuring plate 12 Light receiving unit 13 Signal line 14 Signal processing unit a to N slit a to n Conventional slits La, Lx, Ly Light flux
Claims (1)
として用いる半導体発光素子と、前記半導体発光素子を
封止する透光性樹脂材からなるモ−ルド部とを備え、前
記線光源の光源から受光部に向けて出力光が発射される
モ−ルド部の面をド−ム状に外側に突出させてレンズを
形成し、前記レンズで線光源の光源を多数の点光源の光
源に変換し、当該レンズに形成された多数の点光源から
平行な出力光を発射することを特徴とする半導体発光装
置。1. A linear light source, comprising: a semiconductor light emitting element using a light emitting layer formed on a side surface as a light source of a line light source; and a mold part made of a translucent resin material for sealing the semiconductor light emitting element. A lens is formed by projecting the surface of a mold part from which the output light is emitted from the light source toward the light receiving part outward in a dome shape, and the lens is used as a light source of a line light source for a plurality of point light sources. Wherein a plurality of point light sources formed in the lens emit parallel output light.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31109999A JP2001135858A (en) | 1999-11-01 | 1999-11-01 | Semiconductor light-emitting device |
| KR1020077013195A KR20070065455A (en) | 1999-11-01 | 2000-10-30 | Semiconductor light-emitting device |
| PCT/JP2000/007512 WO2001033641A1 (en) | 1999-11-01 | 2000-10-30 | Semiconductor light-emitting device |
| KR1020027005478A KR100755167B1 (en) | 1999-11-01 | 2000-10-30 | Semiconductor light-emitting device |
| US10/111,849 US6617615B1 (en) | 1999-11-01 | 2000-10-30 | Semiconductor light-emitting device |
| CNB008149607A CN1192441C (en) | 1999-11-01 | 2000-10-30 | Semiconductor light-emitting device |
| TW089122991A TW474031B (en) | 1999-11-01 | 2000-11-01 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31109999A JP2001135858A (en) | 1999-11-01 | 1999-11-01 | Semiconductor light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001135858A true JP2001135858A (en) | 2001-05-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31109999A Pending JP2001135858A (en) | 1999-11-01 | 1999-11-01 | Semiconductor light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001135858A (en) |
-
1999
- 1999-11-01 JP JP31109999A patent/JP2001135858A/en active Pending
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