JP2001135779A - Method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize conduction between common electrode pads in a semiconductor multi-chip package extremely readily via a through-hole. SOLUTION: A plurality of semiconductor chips where through-holes are formed in an electrode pad part for signal input output are laminated so that the through-holes are arranged or a straight line. A columnar conduction resin shaft for conductively connecting each electrode pad is formed by batch embedding and charging of conduction resin by pressing and supplying conduction resin from an opening of the aligned thorough-holes.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing a semiconductor device formed by stacking a plurality of semiconductor chips.

[0002]

2. Description of the Related Art In recent years, with the increase in performance and miniaturization of electronic devices, a plurality of semiconductor chips have been arranged in one package to form a multi-chip package (hereinafter referred to as MCP). Higher functionality and miniaturization of semiconductor devices have been achieved. And in MCP,
There are a type in which a plurality of semiconductor chips are arranged in a plane, and a type in which a plurality of semiconductor chips are stacked in a thickness direction. An MCP in which semiconductor chips are arranged in a plane requires a large mounting area, so that the contribution to miniaturization of electronic devices is small. Therefore, a stacked M in which semiconductor chips are three-dimensionally stacked
CP is being actively developed.

As this type of package structure, as disclosed in Japanese Patent No. 2870530, a module in which a semiconductor chip is mounted on an interposer is formed, and these modules are electrically connected to each other by conductive bumps. It is common to have a structure in which the layers are stacked. Further, as a configuration example not using an interposer, there is a configuration disclosed in Japanese Patent No. 2871636. In this method, semiconductor chips are laminated with an insulating resin interposed, and apertures are formed by irradiating lasers on the electrode portions of the laminate,
The structure is such that holes are filled with conductive resin and mounted on a printed wiring board by conductive bumps at the lowermost chip portion.

[0004]

However, in any of the above cases, since the package is directly mounted on the printed wiring board by conductive bumps, the printed wiring board and the package are thermally expanded by the temperature cycle of the chip. There is a high possibility that disconnection occurs due to relative positional displacement caused by the difference in the coefficient of thermal expansion between the two. As a countermeasure, it is necessary to fill the resin between the printed wiring board and the package with an underfill to absorb the stress. However, it is extremely difficult to perform the underfill after mounting, and this is not a general package. Therefore, as in the former case, the interposer must be interposed in the chip size package (CSP) without fail.
A mounting method using solder bumps can be realized only by having a role similar to underfill.
In the case of the latter package in which the chips are directly bonded, it is still extremely difficult to mount them on a board, and there is a feasibility problem.

An object of the present invention is to enable conduction between common electrode pads in an MCP to be realized very easily via through holes. Also, MCP
Is to provide an MCP that can be mounted without an interposer and a method of manufacturing a semiconductor device using the MCP. A third object is to alleviate the thermal stress generated between the MCP and the printed wiring board on which the MCP is mounted. A fourth object is to provide a structure that can minimize the mounting wiring distance of the MCP.

[0006]

In order to achieve the above object, a method of manufacturing an MCP according to the present invention is directed to a method of manufacturing a semiconductor chip having a through hole formed in a signal input / output electrode pad portion. The columnar conductive resin is formed by stacking a plurality of sheets so as to be arranged in a row, and by supplying the conductive resin under pressure from the openings of the through holes arranged on the straight line, thereby embedding and enclosing the conductive resin all at once and conducting each electrode pad. It is characterized by forming a shaft. In this case, the negative pressure suction is introduced into the opening on the opposite side of the through hole so that the resin is supplied under pressure, so that the resin can be sealed in a short time. Further, the semiconductor chip may be laminated via an adhesive layer having an opening at a position corresponding to the electrode pad, and a conductive flange portion with the electrode pad may be integrally formed on the columnar conductive resin shaft. Furthermore, if the external connection terminal is provided integrally by inserting and hardening a conductive metal pin from the end surface of the columnar conductive shaft after enclosing the conductive resin, the external connection terminal as a package is provided on the back surface of the package, Since this is directly used as a connection terminal to the printed wiring board, the wiring distance can be set to the shortest.

[0007] Further, an MC according to another configuration example of the present invention.
The method of manufacturing P is to form a thin-film semiconductor chip by forming a through-hole in a signal input / output electrode pad portion, enclosing an insulating resin in the through-hole, and lapping the back surface of each chip. A through-hole is formed in the insulating resin in the through-hole of the semiconductor chip, the thin-film semiconductor chips are stacked so that the through-holes are arranged in a straight line, and the conductive resin is applied through the openings of the through-holes arranged in the straight line. By supplying the pressure, the conductive resin is buried and sealed at a time to form a columnar conductive resin shaft for conducting each electrode pad. Thereby, an MCP having a small package thickness can be manufactured.

In a method of manufacturing a semiconductor device according to the present invention, a plurality of semiconductor chips each having a through hole formed in a signal input / output electrode pad portion are stacked and integrated so that the through holes are arranged in a straight line, The MCP is manufactured by pressurizing and supplying the conductive resin from the openings of the through holes arranged on the straight line to embed and enclose the conductive resin in a lump to form a columnar conductive resin shaft for conducting each electrode pad. An external electrode having the same arrangement pattern as that of the chip electrode is formed on a printed wiring board on which the MCP is mounted, a conductive pin is erected on the external electrode, and a fixed electrode separated from the printed wiring board is formed. At a height position, a conductive pin is inserted into the columnar conductive resin shaft and mounted. Since the conductive pins form a gap between the printed wiring board and the package,
The thermal stress on the package side is prevented from affecting the printed wiring board side.

Further, as another method of manufacturing a semiconductor device,
A plurality of semiconductor chips each having a through-hole formed in a signal input / output electrode pad portion are stacked and integrated such that the through-holes are arranged in a straight line, and the conductive resin is passed through the openings of the through-holes arranged in the straight line. By pressurizing and supplying, the conductive resin is buried and sealed in a lump to form a columnar conductive resin shaft for conducting each electrode pad, and a conductive metal pin is inserted from the end face of the columnar conductive shaft after the conductive resin is sealed. An MCP is manufactured by integrally providing an external connection terminal by curing with the above, an external electrode having the same arrangement pattern as the chip electrode is formed on a printed wiring board on which the MCP is mounted, and An external connection terminal protruding from the back surface of the package may be connected to the external electrode and mounted.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of a method of manufacturing an MCP and a semiconductor device according to the present invention will be described in detail with reference to the drawings.

FIG. 1 shows a final step for producing conduction between common electrode pads between stacked chips in manufacturing the semiconductor MCP 10 according to the embodiment. FIG. 2 is a partial schematic cross-sectional view of the semiconductor device 12 on which the manufactured MCP 10 is mounted. Semiconductor chip 1 constituting semiconductor MCP 10
Reference numeral 4 denotes a structure in which a plurality of sheets (three sheets in the illustrated example) are laminated and integrated. When each chip 14 is configured as a memory element, the power supply line, data line, address line, and chip select electrode can be shared. Therefore, since these chip electrodes can be arranged in a common manner, a common electrode is arranged in the vertical direction by stacking the chips 14, and conduction of the chip electrodes between the upper and lower sides is achieved, thereby increasing the chip stacking density. It can be increased up to the number of sheets.

In this embodiment, a through hole 16 penetrating vertically through each electrode portion is formed in each semiconductor chip 14 having commonly arranged chip electrodes. First, as shown in FIG. 3, on a silicon single crystal substrate 18 having a (100) crystal plane orientation on which various elements such as a transistor, a resistance element, and a wiring are formed, an aluminum film is formed via a silicon oxide film 21. Is formed. On this electrode pad 20, a silicon oxide film 22 to be a Si etching resistant film is formed by a CVD method or the like (FIG. 2).
(A)). Similarly, a silicon oxide film 24 is formed on the back surface of the silicon single crystal substrate 18 (FIG. 2B). In this state, a preceding hole 26 penetrating the electrode pad 20 is formed by irradiating a laser beam (FIG. 3C). Next, the diameter of the preceding hole 26 is increased by performing anisotropic etching (FIG. 4D). At this time, the diameter of the electrode pad 20 made of aluminum is also enlarged by etching to form the through hole 16. A silicon oxide film 28 is formed on the inner wall surface of the through hole 16 and the inner peripheral edge portion of the pad by the anisotropic etching, and the surface of the electrode pad 20 is exposed (FIG. 4E).

Since the through holes 16 are formed in the respective chip electrode portions in this manner, when the diced semiconductor chips 14 are aligned and overlapped, the through holes 16 are arranged in a straight line at the common electrode portion. Therefore, the through holes 16, 1 arranged on this straight line
6, a columnar conductive resin shaft 32 that pressurizes and supplies the conductive resin 30 from its upper (or lower) opening to embed and enclose the conductive resin in a lump and conduct each electrode pad 20. Is formed.

For this reason, as shown in FIG. 1, an adhesive layer 3 made of polyimide or the like is provided on the active surface side of each semiconductor chip 14.
4 and the semiconductor chip 14 is stacked on the upper layer to form a chip stack 14M. At this time,
The electrode layer 20 is opened in the adhesive layer 34,
When the conductive resin 30 is absorbed later, the conductive resin 30 is made to go around the electrode pad 20. And the adhesive layer 3
The chip stack 14M interposed therebetween is sandwiched between the front and back surfaces by holding jigs 36 and 38. In the upper holding jig 36, a space 40 surrounding the electrode pad 20 in the uppermost semiconductor chip 14 is formed similarly to the opening of the adhesive layer 20. The lower holding jig 38 also has a space 42 surrounding the outlet of the through hole 16 opening on the back surface of the chip stack 14M, similarly to the opening of the adhesive layer 20.

A pressurizing cylinder 44 is provided on the upper holding jig 36.
Is branched and connected to each pad surrounding space 40. The pressurizing cylinder 44 is connected to the conductive resin tank 48, and a direction switching electromagnetic valve 52 of the resin supply pipe 46 is interposed between the pressurizing cylinder 44 and a suction pipe 50 from the tank 48. Accordingly, the tank 48 and the cylinder 44 are connected during the suction operation of the pressurizing cylinder 44 by the operation of the direction switching electromagnetic valve 52, and the cylinder 44 and the resin supply pipe 46 are connected during the pressurizing operation, so that the pad surrounding The conductive resin 30 can be supplied to the space 40.

On the other hand, the lower holding jig 38 is formed with a negative pressure introduction passage 54 communicating with each through hole outlet surrounding space 42. This is connected to a compressor (not shown) or the like. Therefore, by applying a suction negative pressure to the through hole 16 through the negative pressure introduction passage 54, the pressure cylinder 4
4 assists the injection of the pressurized supply of the conductive resin 30 into the through holes 16.

With the chip stack 14M sandwiched between the upper and lower holding jigs 36 and 38 of the supply means of the conductive resin 30, suction negative pressure is introduced into the through holes 16 arranged in a straight line. Once the conductive resin 3 is
0, the supply path to the through hole 16 is opened by operating the direction switching solenoid valve 52, and the conductive resin 30 is supplied under pressure, so that the through holes 1 arranged in series are provided.
..,... Can be collectively filled with the conductive resin 30. As a result, the columnar conductive resin shaft 32 can be easily formed in a large number of through holes 16 of the chip stack 14M by a single injection operation. As a result, a conductive flange (flange) portion 32F with the electrode pad 20 is integrally formed on the columnar conductive resin shaft 32.
The conductive flange portion 32F has an effect of strengthening the connection of the semiconductor chip 14.

The MCP 10 thus obtained is provided on the back surface of the through-hole exit surrounding space 42 of the lower holding jig 38.
The cured portion of the conductive resin formed as described above can be used as an external connection pad as a package. Therefore, the external electrode pads are arranged on the printed wiring board in the same manner as the electrode pads 20 of the semiconductor chip 14, and the external connection pads are welded to the solder balls mounted on the external electrode pads, whereby the printed wiring board is formed. Can be implemented. By doing so, the wiring distance can be set to the shortest.

Incidentally, the MCP 10 generates heat due to repetition of the operation, and the stress due to this heat history may adversely affect the joint portion with the printed wiring board to be mounted. Therefore, as shown in FIG. 2, a conductive pin 56 is inserted and inserted from the end face of the columnar conductive resin shaft 32 of the MCP 10, and this is used as an external connection terminal. The conduction pin 56 is made of aluminum, tungsten,
It is formed of a conductive metal material such as copper, and has a diameter that allows it to be inserted and inserted into the opening diameter of the through hole 16. The length of the pin only needs to be such that it can be inserted into at least one through hole 16 of the semiconductor chip 14, and it is sufficient that the pin has a length of about 200 to 500 μm. Of course, all through holes 16 of chip stack 14M
It may be the length inserted into. The conduction pins 56 are set so as to protrude from the back surface of the package by a certain length, and
As shown in FIG. 7, the electrical connection is made to the external electrode pads 60 of the printed wiring board 58 by using the solder balls 62, and the mounting is performed so that the gap 64 is set between the MCP 10 and the printed wiring board 58. It is. This allows
The relaxation of thermal stress between the MCP 10 and the printed wiring board 58 can be reduced by the conductive pins 56.

Next, FIG. 4 shows a manufacturing process when the semiconductor chip 14 is made thinner to manufacture an MCP and a semiconductor device on which the MCP is mounted. A through hole 16 is formed in each semiconductor chip 14 by the method shown in FIG. 3 (FIG. 4A), and then a thermosetting insulating resin 66 is filled in the through hole 16 and cured (FIG. 4).
(2)). As a result, the through holes 16 are filled, and the occurrence of cracks due to later lapping can be prevented, so that the backside of the semiconductor chip 14 can be wrapped and the semiconductor chip 14 can be thinned. Then, back lapping is performed until the required thickness is obtained (FIG. 4C). The insulating resin 66 in each through hole 16 of the thinned semiconductor chip 14H is irradiated with laser light to open a through hole 68 of 50 to 100 μm (FIG. 4 (4)). Thereby, a conduction path is secured. Therefore, the thin film semiconductor chip 14H is inserted into the through hole 68.
Are stacked so as to be arranged in a straight line, and the conductive resin 30 is pressurized and supplied through the openings of the through holes 68 arranged in the straight line, so that the conductive resin 30 is buried and sealed in a lump and each electrode pad 20 is sealed. A conductive columnar conductive resin shaft 32 is formed (FIG. 4 (5)). This conductive resin 30
May be performed by the same method as the method described with reference to FIG. After that, the columnar conductive resin shaft 3
2 can be mounted by inserting and inserting the conduction pin 56 from the end face of the printed wiring board 2 and using it as an external connection terminal and connecting it to the external electrode pad 60 on the printed wiring board 58 (FIG. 4).
(6)).

In the above embodiment, the example in which the conductive pins 56 are attached to the MCP 10 in advance is shown. However, as shown in FIG. 5A, the conductive pins 56 are connected to the external electrodes of the printed wiring board 58 by the multi-handling device 70. It is erected collectively on the pad 60. Next, as shown in FIG. 5 (2), the MCP 10 having the columnar conductive resin shaft 32 formed thereon is aligned, and the package 10 is moved downward so as to skewer and insert from the end surface of the columnar conductive resin shaft 32 on the back surface of the package 10. And then mount the conductive resin 30
May be performed.

FIG. 6 shows a circuit board 1000 on which a semiconductor device 1100 according to the embodiment of the present invention is mounted. For the circuit board 1000, an organic substrate such as a glass epoxy substrate is generally used. On the circuit board 1000, a bonding portion made of, for example, copper is formed so as to form a desired circuit. Then, by electrically connecting the bonding portion and the external electrode of the semiconductor device 1100, their electrical continuity is achieved.

Since the mounting area of the semiconductor device 1100 can be reduced to the area for mounting with bare chips, if the circuit board 1000 is used for an electronic device, the size of the electric device itself can be reduced. Further, in the same area, more mounting space can be secured, and higher functionality can be achieved.

FIG. 7 shows a notebook personal computer 1200 as an electronic device having the circuit board 1000. The notebook personal computer 1200 has a highly functional circuit board 1000.
, The performance can be improved.

[0025]

As described above, according to the present invention, a plurality of semiconductor chips having through holes formed in signal input / output electrode pad portions are stacked so that the through holes are arranged in a straight line. Since the conductive resin is pressurized and supplied from the openings of the through holes arranged in a row, the conductive resin is buried and sealed at a time to form a columnar conductive resin shaft for conducting each electrode pad. The effect that the conduction between the common electrode pads can be realized very easily via the through holes is obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a final step for establishing conduction between common electrode pads between stacked chips in a manufacturing process of a semiconductor multi-chip package according to an embodiment.

FIG. 2 is a partial schematic cross-sectional view of a semiconductor device on which a multi-chip package is mounted.

FIG. 3 is an explanatory diagram of a step of forming a through hole in a semiconductor chip.

FIG. 4 is a cross-sectional view showing a manufacturing process of a multi-chip package of a thin-film semiconductor chip.

FIG. 5 is an explanatory diagram of a process of mounting a multi-chip package on a printed wiring board.

FIG. 6 is an explanatory diagram of an application example of the multichip package according to the embodiment to a circuit board.

FIG. 7 is an explanatory diagram of an application example of the multichip package according to the embodiment to an electronic device.

[Explanation of symbols]

 Reference Signs List 10 semiconductor multi-package 12 semiconductor device 14 semiconductor chip (memory chip) 14M chip stack 16 through hole 18 silicon single crystal substrate 20 electrode pad (chip electrode) 22, 24 silicon oxide film 26 preceding hole 28 silicon oxide film 30 conductive resin 32 Columnar conductive resin shaft 34 Adhesive layer 36 Upper holding jig 38 Lower holding jig 40 Pad surrounding space 42 Through hole outlet surrounding space 44 Pressurizing cylinder 46 Resin supply pipe 48 Conductive resin tank 50 Suction pipe 52 Direction switching solenoid valve 54 Negative pressure Introduction path 56 Conducting pin 58 Printed wiring board 60 External electrode pad 62 Solder ball 64 Void 66 Insulating resin 68 Laser through hole 70 Multi-handling device

Claims (7)

[Claims] A plurality of semiconductor chips each having a through hole formed in a signal input / output electrode pad portion are stacked so that the through holes are arranged in a straight line, and conductive layers are formed through openings of the through holes arranged in the straight line. A method for manufacturing a semiconductor device, comprising: forming a columnar conductive resin shaft for electrically connecting each electrode pad by filling and encapsulating a conductive resin at a time by supplying a resin under pressure. 2. The method of manufacturing a semiconductor device according to claim 1, wherein negative pressure suction is introduced into the opening on the opposite side of the through hole to supply resin under pressure. 3. The semiconductor chip according to claim 1, wherein the semiconductor chip is laminated via an adhesive layer having an opening corresponding to the electrode pad, and a conductive flange portion with the electrode pad is integrally formed on the columnar conductive resin shaft. Or a method for manufacturing a semiconductor device according to item 2. 4. The semiconductor according to claim 1, wherein an external connection terminal is integrally provided by inserting a conductive metal pin from an end surface of the columnar conductive shaft and hardening the resin after enclosing the conductive resin. Device manufacturing method. 5. A thin film semiconductor chip is formed by forming a through hole in a signal input / output electrode pad portion, enclosing an insulating resin in the through hole, and lapping the back surface of each chip. A through-hole is formed in the insulating resin in the through-hole of the chip, the thin-film semiconductor chips are stacked so that the through-holes are arranged in a straight line, and the conductive resin is pressed from the opening of the through-hole arranged in the straight line. A method for manufacturing a semiconductor device, comprising: forming a column-shaped conductive resin shaft that electrically connects each electrode pad by burying and encapsulating a conductive resin at a time. 6. A plurality of semiconductor chips each having a through hole formed in a signal input / output electrode pad portion are stacked and integrated such that the through holes are arranged in a straight line. The multi-chip package is manufactured by pressurizing and supplying the conductive resin from the opening to form a columnar conductive resin shaft that embeds and encloses the conductive resin in a lump and conducts each electrode pad. An external electrode having the same arrangement pattern as that of the chip electrode is formed on the printed wiring board to be formed, conductive pins are erected on the external electrode, and at a constant height position separated from the printed wiring board. A method of manufacturing a semiconductor device, wherein a conductive pin is inserted into the columnar conductive resin shaft and mounted. 7. A plurality of semiconductor chips each having a through-hole formed in a signal input / output electrode pad portion are stacked and integrated such that the through-holes are arranged in a straight line, and a plurality of semiconductor chips are formed. By pressurizing and supplying the conductive resin from the opening, the conductive resin is buried and sealed at a time to form a columnar conductive resin shaft for conducting each electrode pad, and from the end surface of the columnar conductive shaft after sealing the conductive resin. A multi-chip package is manufactured by integrally providing external connection terminals by inserting and curing conductive metal pins, and the same arrangement pattern as the chip electrodes is formed on a printed wiring board on which the multi-chip package is mounted. An external electrode is formed, and an external connection end protruding from the back surface of the package to the external electrode. A method for manufacturing a semiconductor device, comprising connecting and mounting semiconductor chips.