JP2001135452A - Laminated chip-type surge absorbing element and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laminated chip-type surge absorbing element with low electrostatic capacity and superior surge responsibility, which is highly suitable to mass production, has low cost, requires only a small mounting space and has functions of plural elements, and provide its manufacturing method. SOLUTION: This is the laminated chip-type surge absorbing element comprising a laminated element formed by laminating plural electrode sheet layers and insulation sheet layers 3a, 3b, 3c and 3d. In the above respective electrode sheet layers, the first internal electrodes 9a, 9b extending to one terminal of the laminated element, the second internal electrodes 8a, 8b extending to the other terminal and the third internal electrodes 7a, 7b extending to both sides of the laminated element are formed. Between either of the above first internal electrodes 9a, 9b, second internal electrodes 8a, 8b and the third internal electrodes 7a, 7b, discharge spaces 10a, 10b and 10c are provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention mainly relates to a surge absorbing element for protecting an electronic circuit or an electronic component from a surge, which is suitable for automatic surface mounting on a printed circuit board.
The present invention relates to a multilayer chip type surge absorbing element and a method for manufacturing the same.

[0002]

2. Description of the Related Art A conventional surge absorbing element will be described below.
explain. As an example, in an AC line as shown in FIG. 5, as a countermeasure against surge between the line AA ′, the line BB ′ and the ground G, as shown in a circuit wiring diagram in FIG. 11c was connected.

FIG. 6 is a diagram showing a mounting state of the circuit diagram of FIG. 5 on a substrate. Here, the surge absorbing element 11
a, 11b, and 11c, a surge absorbing element 11a is connected between line AA 'and ground GG' by line BB '.
And the ground GG ', and the surge absorbing element 1b between the line AA' and the line BB '.
1c was implemented.

[0004]

The conventional surge absorbing element has the following problems. That is, in the mounting method of the surge absorbing element of FIG. 6, three surge absorbing elements are required. For this reason, there is a problem that, when mounting, a large number of work steps and work costs are required, and a large mounting space is required. Furthermore, in the case of a chip type varistor element as a surge absorbing element, its capacitance is large,
There is a problem that the signal system circuit is not suitable.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a multilayer chip type surge having a function of a plurality of elements, having a small capacitance, excellent surge response, excellent mass productivity, low cost and no mounting space. An object of the present invention is to provide an absorbing element and a manufacturing method thereof.

[0006]

The multilayer chip type surge absorbing element of the present invention is a multilayer chip type surge absorbing element comprising a laminated element formed by laminating a plurality of electrode sheet layers and an insulating sheet layer. Then, in each of the electrode sheet layers,
A first internal electrode reaching one end of the multilayer element, a second internal electrode reaching the other end, and a third internal electrode reaching both side surfaces of the multilayer element; A discharge space was provided between any one of the first internal electrode, the second internal electrode, and the third internal electrode, and external electrodes were provided at both end portions and both side end portions of the multilayer element. This is a multilayer chip type surge absorbing element.

[0007] The multilayer chip type surge absorbing element of the present invention comprises:
Since a plurality of surge absorbing element parts are provided inside one laminated element, the mounting space is smaller than before,
In addition, since the gap discharge type is adopted, the capacitance is small and can be used for signal lines.

Further, the multilayer chip type surge absorbing element of the present invention is characterized in that the multilayer element is manufactured by a screen printing method, a green sheet method or the like, and can be mass-produced based on the prior art. .

That is, the present invention provides a plurality of electrode sheet layers,
A laminated chip type surge absorbing element comprising a laminated element formed by laminating an insulating sheet layer, wherein each of the electrode sheet layers has a first internal electrode reaching one end of the laminated element; A second internal electrode reaching the other end and a third internal electrode reaching both side surfaces of the stacked element are formed, and the first internal electrode, the second internal electrode, and the third internal electrode are formed. A multilayer chip type surge absorbing element having a discharge space between any one of the internal electrodes and an external electrode on both ends of the multilayer element and both side faces.

Further, the present invention provides the multilayer chip type surge absorbing element, wherein the discharge space includes a first internal electrode,
The multilayer chip type surge absorbing element is provided between the second internal electrodes, between the first internal electrode and the third internal electrode, or between the second internal electrode and the third internal electrode. .

[0011] The present invention also provides a plurality of electrode sheet layers,
An insulating sheet layer, a laminated element is formed by laminating, both ends of the laminated element, a manufacturing method of a laminated chip type surge absorbing element forming external electrodes on both side surfaces, the electrode sheet layer, Forming a first internal electrode reaching one end of the multilayer element, a second internal electrode reaching the other end, and a third internal electrode reaching both side surfaces of the multilayer element; Forming a discharge space in a region facing any one of the electrode, the second internal electrode, and the third internal electrode;
The discharge space is a method for manufacturing a multilayer chip type surge absorbing element formed by a punching method.

Further, the present invention provides the method of manufacturing a multilayer chip type surge absorbing element, wherein a plurality of the discharge gaps are formed, and between the first internal electrode and the second internal electrode or between the first internal electrode and the first internal electrode. This is a method of manufacturing a multilayer chip type surge absorbing element formed in a region between third internal electrodes or between a second internal electrode and a third internal electrode.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A multilayer chip type surge absorbing element according to an embodiment of the present invention and a method for manufacturing the same will be described below.

FIG. 1 is a perspective view of a multilayer chip type surge absorbing element according to the present invention. As shown in FIG. 1, the multilayer chip type surge absorbing element includes a multilayer element 12 and the multilayer element 12.
, And external electrodes 2a and 2b formed on both side surfaces of the multilayer device 12.

FIG. 2 is an exploded view of the multilayer element of the multilayer chip type surge absorbing element of FIG. Here, FIG. 2 is a view in which the structure of each layer of the multilayer element is made easy to see, and as shown in FIG. 2, the sheet is not necessarily manufactured, and the sheet having two sheets in FIG. It is also possible to make it with a sheet.

FIG. 3 is a sectional view taken along the line CC of the multilayer chip type surge absorbing element of FIG. In FIG. 3, the insulating sheet layer 3
a, 3b, 3c, the material of the 3d is a glass of principal components _{Na 2 O · B 2 O 3} · SiO 2 as an insulating ceramic 40
Steatite added by weight% was used. Insulating sheet layer 3
a, 3b, 3c, 3d are manufactured by a green sheet method,
Third internal electrodes 7a, 7b, second internal electrodes 8a, 8
b, the first internal electrodes 9a and 9b were produced by a screen printing method.

Here, each of the internal electrodes 7a, 7b, 8a, 8
For b, 9a and 9b, Ag-30% Pd was used. The discharge spaces 10a, 10b, and 10c were formed by punching.
Each insulating sheet layer is thermocompression-bonded at 110 ° C.
It was integrally fired at 1000 ° C. in an oxygen atmosphere. The external electrodes 1a, 1b, 2a, and 2b were formed by baking Ag electrodes at 600 ° C. and then performing Ni plating. The material of the insulating sheet layer, the material of the internal electrode, the material of the external electrode, and the electrode shape of the surge absorbing element are not limited to the present embodiment.

The multilayer chip type surge absorbing element of the present embodiment is an element in the case of a countermeasure against surge between two lines and ground and between one line and line. That is, surge is absorbed between the line AA ′ and the ground GG ′ by the discharge caused by the gap in the discharge space 10a between the third internal electrode 7a and the second internal electrode 8a on the upper part of the element. Further, a surge is absorbed between the line BB 'and the ground GG' by the discharge caused by the gap in the discharge space 10b between the third internal electrode 7b and the first internal electrode 9a. Furthermore, surge is absorbed between the line AA ′ and the ground GG ′ by the discharge caused by the gap between the discharge space 10c between the second internal electrode 8b and the first internal electrode 9b.

The multilayer chip type surge absorbing element shown in FIG.
As shown in FIG. 3, the external electrodes 1a and 1b overlap on the line AA 'and the line BB' provided on the printed circuit board, and the external electrodes 2a and 2b provided on both side edges are connected to the ground GG '.
Is surface-mounted with solder or the like so as to overlap with. As a result, it is possible to take measures against line-to-line and line-to-ground surges with a single surge absorbing element.

As described above, the multilayer chip type surge absorbing element according to the present invention can form a plurality of surge absorbing elements in one element by an easy manufacturing process utilizing a technique having high productivity such as a conventional screen printing technique. This makes it possible to reduce man-hours, cost, and mounting space for mounting on a printed circuit board.

[0021]

As described above, according to the present invention, a multilayer chip having a small capacitance, excellent surge response, excellent mass productivity, low cost, and a function of a plurality of elements without taking up mounting space. And a method of manufacturing the same.

[Brief description of the drawings]

FIG. 1 is an external view of a multilayer chip type surge absorbing element of the present invention.

FIG. 2 is an exploded view of the multilayer chip type surge absorbing element of the present invention.

FIG. 3 is a sectional view of the multilayer chip type surge absorbing element of the present invention.

FIG. 4 is a diagram showing a mounted state of the multilayer chip type surge absorbing element of the present invention.

FIG. 5 is a circuit diagram showing a measure against surge.

FIG. 6 is a diagram showing a mounting state of a conventional surge absorbing element on a substrate.

[Explanation of symbols]

 1a, 1b, 2a, 2b External electrode 3a, 3b, 3c, 3d Insulating sheet layer 4a, 4b, 5a, 5b, 6a, 6b Electrode sheet layer 7a, 7b Third internal electrode 8a, 8b Second internal electrode 9a , 9b First internal electrode 10a, 10b, 10c Discharge space 11a, 11b, 11c Chip varistor 12 Stacked element

Claims (4)

[Claims] 1. A multilayer chip type surge absorbing element comprising a laminated element formed by laminating a plurality of electrode sheet layers and an insulating sheet layer, wherein each of the electrode sheet layers has one of the laminated elements. A first internal electrode reaching the end of the first element, a second internal electrode reaching the other end, and a third internal electrode reaching both side surfaces of the stacked element. And a discharge space between any one of the second internal electrode and the third internal electrode, and external electrodes are provided at both ends and both side surfaces of the multilayer element. Multilayer chip type surge absorbing element. 2. The multilayer chip type surge absorbing element according to claim 1, wherein said discharge space includes a first internal electrode and a second internal electrode.
Characterized in that it is installed in the region between the internal electrodes, between the first internal electrode and the third internal electrode, or between the second internal electrode and the third internal electrode. element. 3. A multilayer chip type surge absorbing element, wherein a plurality of electrode sheet layers and an insulating sheet layer are laminated to form a laminated element, and external electrodes are formed on both ends and both side surfaces of the laminated element. In the manufacturing method, a first internal electrode reaching one end of the laminated element, a second internal electrode reaching the other end, and a third internal electrode reaching both sides of the laminated element are provided on the electrode sheet layer. And a discharge space is formed in any of the opposing regions of the first internal electrode, the second internal electrode, and the third internal electrode, and the discharge spaces are respectively punched. A method for manufacturing a multilayer chip type surge absorbing element, characterized by being formed by a method. 4. The method for manufacturing a multilayer chip type surge absorbing element according to claim 3, wherein a plurality of said discharge gaps are formed and are provided between a first internal electrode and a second internal electrode or between the first internal electrode and the first internal electrode. A method for manufacturing a multilayer chip type surge absorbing element, wherein the method is formed in a region between third internal electrodes or between a second internal electrode and a third internal electrode.