JP2001127013A - Semiconductor device, manufacturing method thereof, circuit substrate and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device whose handling in a manufacturing process is made excellent, and a method for manufacturing the semiconductor device, and a circuit board, and electric equipment. SOLUTION: This method for manufacturing a semiconductor device comprise a first process for adhering a first holding member 40 to one face of a wafer 10 on which an integrated circuit is formed and for dicing the wafer 10 from the other face, and a second process for grinding the face of the semiconductor chip 20 opposite to a face 22 on which the integrated circuit is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method of manufacturing the same, a circuit board, and an electronic device.

[0002]

BACKGROUND OF THE INVENTION Along with the miniaturization and thinning of semiconductor devices, there has been known a method of forming a thin semiconductor chip by grinding a surface of a wafer opposite to a surface on which an integrated circuit is formed. For example, Japanese Patent Application Laid-Open No. H11-40520 discloses a method in which a groove is formed (half cut) from a pattern forming surface of a wafer along a dicing line, and the wafer is divided into thin semiconductor chips by grinding the back surface of the wafer. Is described.

However, since the wafer after the half-cut is easily broken, it may be difficult to handle the wafer before moving to a grinding step. Further, in order to perform the half-cutting reliably, a certain thickness of the wafer is inevitably required, and in the case of a thin wafer, the half-cutting is difficult.

An object of the present invention is to solve this problem, and an object of the present invention is to provide a semiconductor device excellent in handling in a manufacturing process, a manufacturing method thereof, a circuit board, and an electronic device.

[0005]

(1) In a method of manufacturing a semiconductor device according to the present invention, a first holding member is attached to one surface of a wafer on which an integrated circuit is formed, and the wafer is mounted from the other surface. A first step of dicing the semiconductor chip into a plurality of semiconductor chips, and a second step of grinding a surface of at least one of the semiconductor chips opposite to the surface on which the integrated circuit is formed.

According to the present invention, after dicing a wafer into individual semiconductor chips, the semiconductor chips are ground and thinned. In other words, since a large-diameter wafer is not thinly ground, cracking of the wafer can be prevented. Furthermore, individual semiconductor chips divided by dicing can be collectively managed on the first holding member. Therefore, it is possible to provide a method for manufacturing a semiconductor device which does not reduce productivity and is excellent in handling in a manufacturing process.

(2) In this method of manufacturing a semiconductor device, the second step may be performed by attaching a second holding member to a surface of the semiconductor chip on which the integrated circuit is formed.

Thus, the semiconductor chips divided individually can be fixed and ground. Therefore,
Since a plurality of individually divided semiconductor chips can be ground at the same time, it is possible to provide a method of manufacturing a semiconductor device which does not reduce productivity and is excellent in handling in a manufacturing process.

(3) In this method of manufacturing a semiconductor device, the first step includes forming the first step on a surface of the wafer opposite to an active surface on which the integrated circuit is formed.
Bonding the holding member and completely dicing the wafer from the side of the active surface, and after the first step, bonding the second holding member over the plurality of divided semiconductor chips. After attaching, the first holding member may be peeled off, and the second step may be performed.

Thus, a plurality of semiconductor chips are stuck to one of the first and second holding members from the step of dicing the wafer into individual semiconductor chips and the step of grinding the semiconductor chips, and put together. Each step can be carried out by controlling. Therefore, it is possible to provide a method for manufacturing a semiconductor device which is excellent in handling in a manufacturing process.

(4) In this method of manufacturing a semiconductor device, before the first step, the surface of the wafer opposite to the surface on which the integrated circuit is formed is ground to reduce the thickness of the wafer. The method may further include a step.

According to this, before the step of dicing the wafer and dividing it into individual semiconductor chips, the wafer is ground to reduce the thickness of the wafer somewhat. That is, for example, after the wafer is ground to such an extent that the wafer is not easily broken, the wafer is diced and then ground again to obtain a final semiconductor chip thickness. This can prevent a large-diameter wafer from cracking, so that it is possible to provide a method for manufacturing a semiconductor device which is excellent in handling in a manufacturing process.

(5) In this method of manufacturing a semiconductor device, after the second step, via the second holding member,
The method may further include a step of pressing the surface of the semiconductor chip on which the integrated circuit is formed to pick up individual semiconductor chips.

Thus, the semiconductor chip after the grinding step can be picked up as it is via the holding member used in the grinding step. Therefore, individual semiconductor chips can be taken out by a simple process.

(6) In this method of manufacturing a semiconductor device, after the second step, a third holding member is attached to a surface of the semiconductor chip opposite to a surface on which the integrated circuit is formed, and then the second holding member is attached to the second holding member. After the holding member is peeled off, the method may further include a step of pressing the opposite surface of the semiconductor chip via the third holding member to pick up individual semiconductor chips.

Thus, the individual semiconductor chips can be easily taken out without applying stress to the surface of the semiconductor chips on which the integrated circuits are formed.

(7) The method of manufacturing a semiconductor device may further include, before the first step, a step of forming a bump on an electrode on a surface on which the integrated circuit is formed.

According to this, after forming bumps on the plurality of electrodes on the surface on which the integrated circuit is formed, at least a grinding step is performed. Thus, in a process after the grinding process, the semiconductor chip can be taken out of the holding member and the process can be shifted to the mounting process. Therefore, it is possible to provide a method for manufacturing a semiconductor device which is excellent in handling in a manufacturing process.

(8) In this method of manufacturing a semiconductor device, at least one of the first to third holding members may have ultraviolet curability.

If the holding member has ultraviolet curability,
The adhesive strength can be easily reduced by irradiation with ultraviolet rays. Therefore, a plurality of semiconductor chips can be adhered at the time of grinding, and can be easily separated in a subsequent step.

(9) A semiconductor device according to the present invention is manufactured by the above-described method for manufacturing a semiconductor device.

(10) A circuit board according to the present invention has the above-described semiconductor device mounted thereon.

(11) An electronic apparatus according to the present invention includes the above semiconductor device.

[0024]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) This embodiment relates to a method of manufacturing a semiconductor device in which a wafer 10 on which an integrated circuit (pattern) is formed is divided into a plurality of semiconductor chips 20. 20 can be further mounted on a substrate to form a semiconductor device having a CSP (Chip Scale / Size Package) structure.

FIGS. 1 to 4 are views showing a method of manufacturing a semiconductor device according to the present embodiment. In the present embodiment,
After the step of dicing the wafer 10, the thin semiconductor chips 20 are formed by grinding the divided individual semiconductor chips 20.

(Dicing Step) FIG.
FIG. 3 is a diagram showing a process of dividing the semiconductor chip into a plurality of semiconductor chips 20 by a dicing apparatus.

The wafer 10 on which the integrated circuit (pattern) is formed is diced. In the present embodiment, the integrated circuit on the wafer 10 is diced from the formation surface 22 side. The diameter of the wafer 10 is not particularly limited, and its thickness is not particularly limited. In dicing the wafer 10, any of a cutter, a laser, a blade, and the like may be used. For example, the wafer 10 may be cut and divided into individual semiconductor chips 20 by rotating the blade 34 at a high speed as shown in FIG. In this case,
Dicing may be performed using either half-cut or full-cut method. In the case of half-cut, the wafer 10 can be divided into individual semiconductor chips 20 by cutting the wafer 10 along a dicing line after cutting.

At the time of dicing, the wafer 10 is attached to the first holding member 40. First holding member 4
0 may be used for fixing the wafer 10 by its adhesiveness and dicing in a stable state, and a plurality of semiconductor chips 20 divided by the dicing.
May be used to facilitate their handling by grouping them together. Therefore, the first holding member 40
Any material may be used as long as it can fix a plurality of semiconductor chips 20, and for example, a UV tape using an ultraviolet curable resin as an adhesive may be used. In the case of a UV tape, the adhesive strength can be easily reduced by curing the resin by irradiation of ultraviolet rays.

Forming surface 2 of integrated circuit on wafer 10
When dicing by forming a cutting line from 2,
The first holding member 40 is attached to the wafer 10 on the side opposite to the integrated circuit forming surface 22 (the back surface of the wafer 10). In this case, for example, the first holding member 40 attached to the wafer 10 is placed on the table 30, and the outside of the placed first holding member 40 is fixed by the ring 32, and the first holding member 40 is fixed to the first holding member 40. The wafer 10 on the holding member 40 may be diced. In any case, it suffices if the wafer 10 can be divided into individual semiconductor chips 20, and the form is not limited to the above.

After the dicing step, it is preferable to manage the plurality of divided semiconductor chips 20 in a group.
Is preferably peeled off as necessary in the next step.
More specifically, as shown in FIG. 2, in the next grinding step, the second holding member 42 is attached to the integrated circuit forming surface 22 of the semiconductor chip 20 and the back surface of the semiconductor chip 20 is ground. In the dicing step, when dicing is performed by attaching the first holding member 40 to the back surface of the wafer 10, the surface opposite to the surface to which the first holding member 40 is attached (the back surface of the semiconductor chip 20). After attaching the second holding member 42 to the surface (the integrated circuit forming surface 22 of the semiconductor chip 20), the first holding member 40 is preferably peeled off. In this manner, the plurality of semiconductor chips 20 are first and second holding members 40 and 42 from a step of dicing the wafer 10 into individual semiconductor chips 20 (dicing step) to a step of grinding the semiconductor chips 20. And each step can be performed by collectively managing them. Therefore, it is possible to provide a method for manufacturing a semiconductor device which is excellent in handling in a manufacturing process.

As the first holding member 40, a UV tape using the above-mentioned ultraviolet curable resin as an adhesive may be used, so that the first holding member 40 can be easily peeled off.

(Grinding Step) As shown in FIG. 2, the semiconductor chips 20 which are diced and individually divided are ground. More specifically, the surface of the semiconductor chip 20 opposite to the integrated circuit forming surface 22 (the back surface of the semiconductor chip 20) is ground.

For example, as shown in FIG.
0 is attached to the second holding member 42 and fixed, and the semiconductor chip 20 is fixed by a grindstone 52 provided on a grinding jig 50.
Scrape the back of. It is preferable that the plurality of semiconductor chips 20 be firmly fixed to the holding member 42 so that the plurality of semiconductor chips 20 are not repelled by the stress applied by the grinding. In other words, by fixing the semiconductor chip 20 by the holding member 42, even the plurality of semiconductor chips 20 after dicing can be ground in a stable state. Note that one semiconductor chip 20 may be ground.

The second holding member 42 may be made of the above-mentioned ultraviolet curable resin as an adhesive. Accordingly, when grinding the semiconductor chip 20, the semiconductor chip 20 is held with a large adhesive force, and the adhesive force is reduced so that the individual semiconductor chips 20 can be easily taken out in a subsequent step. it can. Therefore, the bonded semiconductor chip 20 can be easily taken out.

In the present embodiment, the plurality of semiconductor chips 20 are ground after the dicing step. Therefore, for example, even if chipping occurs at the intersection of the cutting lines due to dicing, the semiconductor chip 2
Since the grinding of 0 is performed, a chipped shape can be eliminated. Therefore, the method for manufacturing a semiconductor device according to the present embodiment can manufacture a semiconductor device with excellent handling and high reliability.

FIG. 3 is a view showing the semiconductor chip 20 which has been ground to a small thickness after this step. The plurality of semiconductor chips 20 after the grinding are picked up from the second holding member 42 attached in the grinding step. For example, as shown in FIG. 3, the pressing jig 60 is used to lift the semiconductor chip 20 via the holding member 42 from the side of the integrated circuit forming surface 22 of the semiconductor chip 20 to which the second holding member 42 is attached. You may pick it up. Thereby, the semiconductor chips 20 can be individually taken out from the second holding member 42.

After the grinding step shown in FIG. 2, the third holding member 44 is attached to the back surface of the semiconductor chip 20 and the second holding member 42 is peeled off.
The semiconductor chip 20 may be picked up through the interface.
That is, as shown in FIG. 4, even if the semiconductor chip 20 is picked up from the back surface side of the semiconductor chip 20 to which the third holding member 44 is attached by the pressing jig 60 so as to lift the semiconductor chip 20 via the holding member 44. Good. Thus, at the time of pickup, the individual semiconductor chips 20 can be taken out without applying stress to the integrated circuit forming surface 22 of the semiconductor chip 20.

Prior to the step of dicing the wafer 10, the wafer 10 may be ground to a somewhat smaller thickness. More specifically, before the dicing step, the wafer 10 may be ground to such an extent that the thickness of the semiconductor chip 20 does not reach the completed thickness. As a result, the large-diameter wafer 10
Therefore, it is possible to provide a method of manufacturing a semiconductor device which is excellent in handling in a manufacturing process.

According to the present embodiment, after the wafer 10 is diced and divided into individual semiconductor chips 20,
The semiconductor chip 20 is ground and thinned. That is, since the large-diameter wafer 10 is not thinly ground to the thickness at the time of completion, cracking of the wafer 10 can be prevented. Furthermore, the individual semiconductor chips 20 divided by dicing can be collectively managed on the first holding member 40. Therefore, it is possible to provide a method for manufacturing a semiconductor device which does not reduce productivity and is excellent in handling in a manufacturing process.

The first to third holding members 4 described above are used.
All of 0, 42, and 44 may be the same, or may be different members as needed. Further, at least one of the first to third holding members 40, 42, and 44 may be a UV tape using an ultraviolet curable resin as an adhesive.

(Second Embodiment) FIG. 5 is a view showing a method of manufacturing a semiconductor device according to the present embodiment. FIG. 2 is a diagram when the semiconductor chip 20 provided with the bumps 24 is picked up.

In this embodiment, the wafer 10 before the grinding step (the semiconductor chip 20 after the dicing step)
The bumps 24 are formed on the plurality of electrodes in the above. If the bumps 24 are provided before the dicing step, the wafer 10
Then, the dicing and grinding steps are performed. Since the bumps 24 are formed in the state of the wafer 10 having a large diameter, the bumps 24 can be efficiently provided on the electrodes. Further, the bumps 24 may be provided after the dicing step.
The bumps 24 can be provided efficiently because the zeros are arranged as a group on the first holding member 40.

The bump 24 may be formed by a ball bump using a bonding wire. In addition, the bump 24 may be formed by an electrolytic plating method, an electroless plating method, a paste printing method, a ball mounting method, or a combination thereof. A matching technique may be used.

The present embodiment includes a step of dicing the wafer 10 into individual semiconductor chips 20 and grinding the semiconductor chips 24 having the bumps 24. When the back surface of the semiconductor chip 20 is ground as described above, it is preferable that the back surface of the semiconductor chip 20 is ground by attaching it to the second holding member 42 on the integrated circuit forming surface 22. Therefore, in the present embodiment, since it is not necessary to perform bumping after the grinding process, the semiconductor chip 20 after the grinding process can be picked up as shown in FIG. A method for manufacturing a semiconductor device with excellent handling can be provided.

The semiconductor chip 20 manufactured according to the above-described embodiment may be mounted on a substrate and packaged to form a CSP type package that is reduced in size and thickness. 2
A multi-chip module in which a plurality of 0s are mounted on a substrate may be used. In any case, according to the present invention, a highly reliable and thin semiconductor device can be manufactured.

FIG. 6 shows a circuit board 100 on which the semiconductor device 1 according to the present embodiment is mounted. Generally, an organic substrate such as a glass epoxy substrate is used for the circuit board 100. Wiring patterns made of, for example, copper or the like are formed on the circuit board 100 so as to form a desired circuit, and the electrical continuity of the wiring patterns and the external terminals of the semiconductor device is established by mechanically connecting the wiring patterns and external terminals of the semiconductor device. Aim.

FIG. 7 shows a notebook personal computer and FIG. 8 shows a mobile phone as an electronic apparatus having a semiconductor device to which the present invention is applied.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor device according to a first embodiment to which the present invention is applied.

FIG. 2 is a diagram illustrating a method of manufacturing a semiconductor device according to a first embodiment to which the present invention is applied.

FIG. 3 is a diagram illustrating a method of manufacturing the semiconductor device according to the first embodiment to which the present invention is applied.

FIG. 4 is a view showing a modification of the method of manufacturing the semiconductor device according to the first embodiment to which the present invention is applied;

FIG. 5 is a diagram illustrating a method of manufacturing a semiconductor device according to a second embodiment to which the present invention is applied.

FIG. 6 is a diagram showing a circuit board on which a semiconductor device to which the present invention is applied is mounted.

FIG. 7 is a diagram illustrating an electronic apparatus including a semiconductor device to which the present invention is applied;

FIG. 8 is a diagram illustrating an electronic apparatus including a semiconductor device to which the present invention is applied;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Wafer 20 Semiconductor chip 22 Integrated circuit formation surface 24 Bump 30 units 32 Ring 34 Blade 40 First holding member 42 Second holding member 44 Third holding member 50 Grinding jig 52 Grinding stone 60 Pressing jig

Claims (11)

[Claims] A first step of attaching a first holding member to one surface of a wafer on which an integrated circuit is formed, dicing the wafer from the other surface, and dividing the wafer into a plurality of semiconductor chips; A second step of grinding a surface of the one semiconductor chip opposite to a surface on which the integrated circuit is formed, a method for manufacturing a semiconductor device. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the second step is performed by attaching a second holding member to a surface of the semiconductor chip on which the integrated circuit is formed. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the first holding is performed on a surface of the wafer opposite to an active surface on which the integrated circuit is formed on the wafer. Including a step of attaching a member and completely dicing the wafer from the side of the active surface, and after the first step, attaching the second holding member across the plurality of divided semiconductor chips. A method of manufacturing a semiconductor device, wherein the first step is performed after the first holding member is peeled off. 4. The method for manufacturing a semiconductor device according to claim 1, wherein, before the first step, a surface of the wafer opposite to a surface on which the integrated circuit is formed is removed. A method for manufacturing a semiconductor device, further comprising the step of grinding to reduce the thickness of the wafer. 5. The method for manufacturing a semiconductor device according to claim 2, wherein the integrated circuit is formed on the semiconductor chip via the second holding member after the second step. A method for manufacturing a semiconductor device, further comprising the step of pressing a surface to pick up individual semiconductor chips. 6. The method for manufacturing a semiconductor device according to claim 2, wherein after the second step, a third holding member is opposite to a surface of the semiconductor chip on which the integrated circuit is formed. After peeling off the second holding member after attaching to the side surface,
And a step of pressing the opposite surface of the semiconductor chip via the holding member to pick up individual semiconductor chips. 7. The method for manufacturing a semiconductor device according to claim 1, further comprising, before the first step, a step of forming a bump on an electrode on a surface on which the integrated circuit is formed. A method for manufacturing a semiconductor device. 8. The method of manufacturing a semiconductor device according to claim 1, wherein at least one of the first to third holding members has ultraviolet curability. Method. 9. A semiconductor device manufactured by the method of manufacturing a semiconductor device according to claim 1. 10. A circuit board on which the semiconductor device according to claim 9 is mounted. 11. An electronic apparatus comprising the semiconductor device according to claim 9.