JP2001123265A - Manufacturing method of molding, and film depositing apparatus - Google Patents
Manufacturing method of molding, and film depositing apparatusInfo
- Publication number
- JP2001123265A JP2001123265A JP29914999A JP29914999A JP2001123265A JP 2001123265 A JP2001123265 A JP 2001123265A JP 29914999 A JP29914999 A JP 29914999A JP 29914999 A JP29914999 A JP 29914999A JP 2001123265 A JP2001123265 A JP 2001123265A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- shielding plate
- film thickness
- shielding plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、膜厚むらの少ない
膜を有する成形体の製造方法及び成膜装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a molded article having a film having a small thickness variation and a film forming apparatus.
【0002】[0002]
【従来の技術】従来の成膜装置は、膜の膜厚むらを防止
するために複数個の成膜粒子遮蔽板(以下、遮蔽板)を
具えるものであった。この遮蔽板を設置することで基材
上に達する蒸着粒子の量を制御することができ、その結
果、成膜される膜の膜厚むらが防止できるようになるの
である。2. Description of the Related Art A conventional film forming apparatus is provided with a plurality of film-forming particle shielding plates (hereinafter referred to as "shielding plates") in order to prevent film thickness unevenness. By providing this shielding plate, the amount of vapor deposition particles reaching the base material can be controlled, and as a result, the thickness of the film to be formed can be prevented from being uneven.
【0003】従来、遮蔽板は、成膜条件に依らず同一形
状のものを一定の数だけ設置していた。そして遮蔽板の
形状は、平面状の被成膜物上に成膜する場合を仮定し、
成膜された平面内の膜に膜厚むらが発生しないように決
定されていた。従来の成膜装置はこのような遮蔽板を具
えるものであった。Conventionally, a fixed number of shielding plates having the same shape are provided regardless of film forming conditions. And the shape of the shielding plate assumes that a film is formed on a planar film-forming object,
It has been determined that film thickness unevenness does not occur in the film formed on the plane. The conventional film forming apparatus has such a shielding plate.
【0004】[0004]
【発明が解決しようとする課題】本発明者は、前記した
ような従来から使用されている成膜装置を用い、例えば
レンズ基材等の曲率を有する被成膜物上に反射防止膜を
成膜することを試みた。そして、反射防止膜が成膜され
たレンズを光学装置に組み込んだところ、光学系の性能
低下が生じる問題点が発生じた。The inventor of the present invention has formed an anti-reflection film on a film-forming object having a curvature, such as a lens substrate, by using a film forming apparatus conventionally used as described above. Tried to film. Then, when the lens on which the antireflection film was formed was incorporated into an optical device, there was a problem that the performance of the optical system deteriorated.
【0005】[0005]
【課題を解決するための手段】本発明者は、光学系の性
能低下の原因を探った。その結果、レンズの周辺部にお
ける光量不足が原因であることが判った。更に、光量不
足の原因を研究したところ、レンズの周辺部に成膜され
た反射防止膜の膜厚が他の部分よりも薄くなっているこ
とが原因であることが判った。つまり、レンズ全体で見
れば、成膜された反射防止膜は、膜厚むらを有するため
に、前記問題点が生じることが判明した。膜厚むらが生
じると、成膜した膜の面内の場所によって、膜の性能が
異なってしまうのである。SUMMARY OF THE INVENTION The present inventor has searched for the cause of performance degradation of an optical system. As a result, it was found that the cause was insufficient light quantity at the periphery of the lens. Further, when the cause of the light quantity shortage was studied, it was found that the cause was that the thickness of the antireflection film formed on the peripheral portion of the lens was thinner than other portions. That is, it was found that the above-mentioned problem occurs because the formed anti-reflection film has uneven film thickness when viewed from the whole lens. When the film thickness unevenness occurs, the performance of the film differs depending on the location in the plane of the formed film.
【0006】更に本発明者は、膜厚むらが発生する原因
を探った。その結果、成膜時に最初に設定する遮蔽板の
条件に問題があることが判明した。前記した通り、従
来、成膜時に最初に設定する遮蔽板の形状や枚数は、被
成膜物が平面状であることを前提に設定してる。そのた
め、被成膜物が曲率を有する場合には、平面状の被成膜
物を前提に設定した条件は、適合しない場合があること
が判明した。特に多層膜は、各層を構成する膜の物質が
異なるものである。そのため、異なる物質間でも遮蔽板
の条件は異なってしまうのである。しかし、従来は、各
層毎に遮蔽板の条件を変更して成膜を行っていないため
に、膜毎に膜厚むらが発生することが判った。仮に、各
層毎に遮蔽板を交換し、多層膜を成膜することで解決可
能であるとしても、この方法は非常に手間がかかり、現
実的な解決方法ではない。Further, the present inventor has searched for the cause of the occurrence of uneven film thickness. As a result, it was found that there was a problem in the condition of the shielding plate initially set at the time of film formation. As described above, conventionally, the shape and the number of shielding plates initially set at the time of film formation are set on the assumption that the object to be film-formed is planar. Therefore, it has been found that in the case where the object to be formed has a curvature, the condition set on the assumption that the object is a planar object may not be met in some cases. In particular, a multilayer film is a material in which the materials of the films constituting each layer are different. Therefore, the condition of the shielding plate differs between different substances. However, it has been found that, in the related art, since the film is not formed by changing the condition of the shielding plate for each layer, the film thickness becomes uneven for each film. Even if the problem can be solved by replacing the shielding plate for each layer and forming a multilayer film, this method is very troublesome and is not a practical solution.
【0007】本発明は、曲率を有する被成膜物上に膜厚
むらの少ない膜を効率よく形成することを目的とする。
そこで本発明は第1に「真空蒸着法により被成膜物上に
膜を形成する成膜工程を有する成形体の製造方法であっ
て、成膜装置内の蒸着源と被成膜物の間に1種類の形状
を有する成膜粒子遮蔽板を設置するにあたり、前記成膜
粒子遮蔽板の設置枚数を前記成膜される膜の膜厚むらが
略発生しないように成膜される枚数に設定する前記成膜
粒子遮蔽板の枚数制御工程を有することを特徴とする成
形体の製造方法(請求項1)」を提供する。第2に「前
記成膜粒子遮蔽板の枚数制御工程は、前記被成膜物の形
状及び/又は成膜物質の情報に基づいて行うことを特徴
とする請求項1に記載の成形体の製造方法(請求項
2)」を提供する。第3に「前記成膜粒子遮蔽板の形状
は、下記式により決定されることを特徴とする請求項1
又は2に記載の成形体の製造方法。式1SUMMARY OF THE INVENTION It is an object of the present invention to efficiently form a film having a small thickness on a film-forming object having a curvature.
Therefore, the present invention firstly provides a method for manufacturing a molded article having a film forming step of forming a film on a film formation object by a vacuum evaporation method, wherein the method comprises the steps of: In installing a film-forming particle shielding plate having one type of shape, the number of the film-forming particle shielding plates is set to the number of films to be formed so that the film thickness unevenness of the film to be formed does not substantially occur. A method for controlling the number of the film-formed particle shielding plates to be formed (claim 1). " Secondly, the manufacturing process of the molded product according to claim 1, wherein "the step of controlling the number of the film-forming particle shielding plates is performed based on information on the shape of the film-forming object and / or the film-forming substance. A method (Claim 2) is provided. Third, the shape of the film-formed particle shielding plate is determined by the following equation.
Or the manufacturing method of the molded object of 2. Equation 1
【0008】[0008]
【数2】 (Equation 2)
【0009】式中、Lは遮蔽板の幅(図3のY軸方向の
長さ)、rは公転中心から補正位置までの距離、nは遮
蔽板の枚数、lは遮蔽板の取り付け軸の幅、dは補正位
置で成膜された膜の膜厚、r0は公転中心から被成膜物
中心までの距離、d0はレンズ中心の膜厚である(請求
項3)」を提供する。第4に「真空槽と、該真空槽内に
設置される蒸着源の設置部と、該設置部に対向する位置
に被成膜物を設置する被成膜物の保持部と、前記設置部
と前記保持部との間に成膜粒子遮蔽板を有する成膜装置
であって、設置された前記成膜粒子遮蔽板の枚数は膜厚
むらが発生しない条件に基づいて設定されたものである
ことを特徴とする成膜装置(請求項4)」を提供する。In the formula, L is the width of the shielding plate (the length in the Y-axis direction in FIG. 3), r is the distance from the center of revolution to the correction position, n is the number of shielding plates, and l is the axis of the mounting axis of the shielding plate. The width, d is the film thickness of the film formed at the correction position, r0 is the distance from the center of revolution to the center of the object, and d0 is the film thickness at the center of the lens. Fourthly, a “vacuum chamber, an installation section for an evaporation source installed in the vacuum chamber, a deposition object holding section for installing a deposition object at a position facing the installation section, A film deposition apparatus having a film-forming particle shielding plate between the film-forming particle shielding plate and the holding unit, wherein the number of the film-forming particle shielding plates installed is set based on a condition under which film thickness unevenness does not occur. A film forming apparatus characterized by the above-mentioned (claim 4) "is provided.
【0010】[0010]
【発明の実施の形態】蒸着法により成膜された膜の膜厚
むらは、蒸着粒子と被成膜物との距離又は被成膜物への
蒸着粒子の入射角又はチャンバー内における蒸着粒子の
分布状態等によって生じるものである。従来の技術のと
ころで記載したように、膜厚むらは、蒸着源と被成膜物
の間に遮蔽板を設置することにより蒸着粒子の量を制御
することで軽減することができる。BEST MODE FOR CARRYING OUT THE INVENTION The film thickness unevenness of a film formed by a vapor deposition method depends on the distance between the vapor-deposited particles and a film-formed object, the incident angle of the vapor-deposited particles on the film-formed object, or the thickness of the vapor-deposited particles in a chamber. This is caused by the distribution state or the like. As described in the description of the related art, the film thickness unevenness can be reduced by controlling the amount of vapor deposition particles by installing a shielding plate between the vapor deposition source and the object.
【0011】遮蔽板を用いる方法としては、遮蔽板の形
状を変えて制御する方法もある。しかしこの方法では、
被成膜物の形状が変わったり、また成膜物質が変わる度
に遮蔽板を変えなければならない。本発明では、同一形
状の遮蔽板を用い、遮蔽板の枚数と設置位置を制御する
ことにより膜厚むらを軽減する。これにより、成膜条件
が変わる毎に遮蔽板の形状を変更することなく、また被
成膜物の形状に依らずに膜厚むらの少ない膜を成膜する
ことができる。As a method of using a shielding plate, there is a method of controlling by changing the shape of the shielding plate. But with this method,
The shield plate must be changed each time the shape of the object to be formed changes or the material to be formed changes. In the present invention, film thickness unevenness is reduced by using shielding plates having the same shape and controlling the number of shielding plates and their installation positions. Accordingly, a film with small thickness unevenness can be formed without changing the shape of the shielding plate every time the film forming conditions change and regardless of the shape of the object to be formed.
【0012】本発明に用いる遮蔽板の形状は、最も膜厚
むらが大きくなる被成膜物又は最も膜厚むらが大きくな
る成膜物質を用いたときに膜厚むらが生じない形状に設
定する。図1に本実施の形態で用いる成膜装置(真空蒸
着装置)を示す概念図を示す。本実施の形態では、被成
膜物として直径が200mmであり、曲率半径が200
mm、300mm、400mmの曲面を有するものと、
同じ直径を有する平面状の被成膜物を用いた。そして、
これらの被成膜物上に成膜を行うことにした。[0012] The shape of the shielding plate used in the present invention is set to a shape that does not cause unevenness in film thickness when a film-forming object having the largest film thickness unevenness or a film-forming substance having the largest film thickness unevenness is used. . FIG. 1 is a conceptual diagram illustrating a film forming apparatus (vacuum vapor deposition apparatus) used in this embodiment. In this embodiment, the object to be formed has a diameter of 200 mm and a radius of curvature of 200 mm.
mm, 300 mm, having a curved surface of 400 mm,
A planar object to be formed having the same diameter was used. And
Film formation is performed on these objects.
【0013】図1に示すように、被成膜物(図中ではレ
ンズ)は、蒸着源と垂直方向に距離bだけ間隔をとり、
蒸着源を中心として回転する公転軸の周囲に設置され
る。更に被成膜物は、公転軸に対して直角方向に距離c
(被成膜物の中心までの距離)の位置に設置される。成
膜時に被成膜物は、この位置で自転する。公転速度は、
6回/分に設定し、また、公転と自転の比率は、公転1
回に対して自転を2.52回に設定した。As shown in FIG. 1, an object to be film-formed (a lens in the figure) is separated from the evaporation source by a distance b in the vertical direction.
It is installed around a revolution axis that rotates around the evaporation source. Further, the film-forming object has a distance c perpendicular to the revolution axis.
(Distance to the center of the object). The object to be film-formed rotates at this position during film-forming. The revolving speed is
Set to 6 revolutions / minute, and the ratio between revolution and rotation is 1 revolution.
The number of rotations was set to 2.52 times.
【0014】図1に示すように遮蔽板は、被成膜物と蒸
着源の間に設置される。具体的には遮蔽板は、蒸着源と
垂直方向に距離aだけ間隔をとり、蒸着源を中心として
回転する公転軸の周囲に設置される。更に遮蔽板は、公
転軸に対して直角方向に距離d(遮蔽板の一端までの距
離)の位置に設置される。本実施の形態ではa=945
mm、b=995mm、c=335mm、d=210m
mとし、被成膜物及び遮蔽板を設置した。As shown in FIG. 1, the shielding plate is provided between the object to be formed and the evaporation source. Specifically, the shielding plate is spaced apart from the evaporation source by a distance a in the vertical direction, and is installed around a revolution axis that rotates about the evaporation source. Further, the shielding plate is installed at a position at a distance d (distance to one end of the shielding plate) in a direction perpendicular to the revolution axis. In the present embodiment, a = 945
mm, b = 995 mm, c = 335 mm, d = 210 m
m, and a film-forming object and a shielding plate were provided.
【0015】図2に、真空蒸着装置を上方から見た概念
図を示す。本実施の形態では、遮蔽板の数は10枚とし
(図2では9枚のみ図示)、各々が等間隔で配置された
遮蔽板取り付け軸(幅約5mm)に設置されている。蒸
着物質としてはフッ化マグネシウムを用い、蒸着時には
被成膜物を250℃に加熱し成膜を行った。FIG. 2 shows a conceptual view of the vacuum deposition apparatus as viewed from above. In the present embodiment, the number of shield plates is ten (only nine are shown in FIG. 2), and each is installed on a shield plate mounting shaft (width: about 5 mm) arranged at equal intervals. Magnesium fluoride was used as a deposition material, and a deposition target was heated to 250 ° C. during deposition to form a film.
【0016】遮蔽坂の形状の決定方法は、平面状の被成
膜物状に形成される膜の膜厚むらを防止する遮蔽板の形
状を決定する方法と基本的には同じである。しかし、本
発明の場合、曲面を有する被成膜物上に成膜することを
考慮し、平面状の被成膜物に成膜した平面上の膜厚むら
を被成膜物面内の膜厚むら(曲率が有限の値を持つ被成
膜物上の成膜面上の膜厚むら)に置き換えた点が異な
る。The method of determining the shape of the shielding slope is basically the same as the method of determining the shape of the shielding plate for preventing the film thickness unevenness of the film formed on the planar object to be formed. However, in the case of the present invention, in consideration of the fact that a film is formed on a film-formed object having a curved surface, unevenness of the film thickness on a plane formed on a planar film-formed object is reduced. The difference is that thickness unevenness (thickness unevenness on a film formation surface on a film formation object having a finite value of curvature) is replaced.
【0017】まず、経験上、膜厚むらが発生することが
判明している被成膜物を成膜装置内に設置し、遮蔽板は
設置しない状態で被成膜物上に膜を成膜する。このとき
被成膜物は自転及び公転させる。そして成膜後、被成膜
物面内での膜厚むらを調べる。膜厚むらは、膜の分光特
性を測定し、その測定結果のピークから換算してデータ
を得る。得られた膜厚むらのデータは、被成膜物を自転
させ成膜したもののデータであることから、膜厚むら
は、被成膜物の中心に対して対称に形成される。従っ
て、被成膜物の中心からの距離に対応して膜厚むらが変
化している状態になっている。よって、膜厚むらは、被
成膜物の中心から動径方向のみを調べればよい。First, a film-forming object which is known from experience to have uneven film thickness is set in a film forming apparatus, and a film is formed on the film-forming object without a shielding plate. I do. At this time, the object is rotated and revolved. Then, after the film formation, the film thickness unevenness in the surface of the film formation object is examined. The film thickness unevenness is obtained by measuring the spectral characteristics of the film and converting the peak from the measurement result to obtain data. Since the obtained data on the film thickness unevenness is data on a film formed by rotating the film-forming object, the film thickness unevenness is formed symmetrically with respect to the center of the film-forming object. Therefore, the film thickness unevenness changes in accordance with the distance from the center of the film formation object. Therefore, the film thickness unevenness may be determined only in the radial direction from the center of the object.
【0018】得られたデータを下記式1に代入し、遮蔽
板の形状を決定する。式1The obtained data is substituted into the following equation 1 to determine the shape of the shielding plate. Equation 1
【0019】[0019]
【数3】 (Equation 3)
【0020】式中、Lは遮蔽板の幅(図3のY軸方向の
長さ)、rは公転中心から補正位置までの距離、nは遮
蔽板の枚数、lは遮蔽板の取り付け軸の幅、dは補正位
置で成膜された膜の膜厚、r0は公転中心から被成膜物
中心までの距離、d0はレンズ中心の膜厚である。In the formula, L is the width of the shielding plate (the length in the Y-axis direction in FIG. 3), r is the distance from the center of revolution to the correction position, n is the number of shielding plates, and l is the axis of the mounting axis of the shielding plate. The width, d is the film thickness of the film formed at the correction position, r0 is the distance from the center of revolution to the center of the object, and d0 is the film thickness at the lens center.
【0021】前記式により形状の概略が決定した遮蔽板
を実際に成膜装置に取り付ける。そして、少しずつ寸法
を変えながら蒸着を繰り返して行い、膜厚むらの発生し
ない形状の遮蔽板を決定する。本実施の形態では、被成
膜物の中心の膜厚に対して面内での膜厚むらを0.3%
以内になるようにした。The shielding plate whose outline is determined by the above equation is actually attached to the film forming apparatus. Then, vapor deposition is repeated while changing the dimensions little by little, and a shielding plate having a shape with no unevenness in film thickness is determined. In this embodiment mode, the in-plane film thickness unevenness is 0.3% with respect to the center film thickness of the film formation object.
Within.
【0022】このようにして求めた遮蔽板の形状の数値
データを表1に示す。Table 1 shows numerical data of the shape of the shielding plate thus obtained.
【0023】[0023]
【表1】 [Table 1]
【0024】表1中のx、yは、図3におけるx方向及
びy方向を示し、各数値はその寸法を示す。また、表1
中x=0の位置は、図1における公転軸からdの距離
(mm)の位置である。次に、遮蔽板の枚数を決定す
る。枚数の決定は、以下のようにして決定する。まず、
前記のようにして決定された形状の遮蔽板を10枚設置
し蒸着を行う。その後、遮蔽坂の枚数を減らして、蒸着
を行っていく。この操作を各曲率半径を有する被成膜物
毎に実施する。そして、被成膜物面内の膜厚むらを調べ
ていき、十分に小さい膜厚むらになる遮蔽板の枚数を決
定する。X and y in Table 1 indicate the x and y directions in FIG. 3, and each numerical value indicates its size. Table 1
The position of middle x = 0 is a position of a distance (mm) of d from the revolution axis in FIG. Next, the number of shielding plates is determined. The number is determined as follows. First,
Ten shield plates of the shape determined as described above are installed and vapor deposition is performed. After that, vapor deposition is performed while reducing the number of shielding slopes. This operation is performed for each film-forming object having each radius of curvature. Then, the film thickness unevenness in the surface of the film formation object is examined, and the number of shielding plates having a sufficiently small film thickness unevenness is determined.
【0025】このようにして得られた、各曲率半径の被
成膜物毎の最適な遮蔽板の枚数とこの条件で成膜された
膜の被成膜物の面内における膜厚むらを表2に示す。The optimum number of shielding plates obtained for each film-forming object having each radius of curvature and the in-plane film thickness unevenness of the film formed under these conditions are shown. It is shown in FIG.
【0026】[0026]
【表2】 [Table 2]
【0027】表2を見ると、曲率半径が200mmであ
るレンズ上に、形状を最適化した10枚の遮蔽板を使用
し成膜した場合、膜厚むらは、0.3%となることが判
る。そして、曲率半径が300mm、400mm、無限
大のレンズを用いた場合にも、遮蔽板の枚数を制御して
成膜すれば、膜厚むらの少ない膜が得られることが判
る。Referring to Table 2, when a film is formed on a lens having a radius of curvature of 200 mm by using 10 shielding plates having an optimized shape, the film thickness unevenness may be 0.3%. I understand. Also, it can be seen that even when a lens having a radius of curvature of 300 mm, 400 mm, and infinity is used, a film with less unevenness in film thickness can be obtained by forming a film while controlling the number of shielding plates.
【0028】次に、被成膜物として直径が200mmで
あり、曲率半径が200mmであるレンズを用い、レン
ズ上にフッ化マグネシウムと酸化アルミニウムを成膜し
た。このときの成膜条件は、フッ化マグネシウムのみ成
膜の場合と同じ条件で行い、遮蔽板の形状も同じ物を用
いた。この条件での遮蔽板の枚数と膜厚むらの関係を調
べた結果を表3に示す。Next, a lens having a diameter of 200 mm and a radius of curvature of 200 mm was used as a film-forming object, and magnesium fluoride and aluminum oxide were formed on the lens. The film forming conditions at this time were the same as those for forming only the magnesium fluoride, and the same shape of the shielding plate was used. Table 3 shows the results of examining the relationship between the number of shielding plates and the film thickness unevenness under these conditions.
【0029】[0029]
【表3】 [Table 3]
【0030】表3を見ると、フッ化マグネシウムからな
る単層膜を成膜する場合、遮蔽板の枚数を10枚に設定
し成膜したときには、膜厚むらは0.3%となり良好な
値を示す。良好な膜厚むらを示した遮蔽板の枚数(10
枚)で、酸化アルミニウムを用いて成膜すると、膜厚む
らは6.0%となり、膜厚むらは大きくなってしまう。Referring to Table 3, when a single layer film made of magnesium fluoride is formed, when the number of the shielding plates is set to 10 and the film is formed, the film thickness unevenness is 0.3%, which is a good value. Is shown. The number of shielding plates (10
In this case, when the film is formed using aluminum oxide, the film thickness unevenness becomes 6.0%, and the film thickness unevenness becomes large.
【0031】これに対し、本発明により設定された枚数
(8枚)の遮蔽板を用いて成膜すれば、10枚の遮蔽板
を用いた場合に比べ、膜厚むらが大きく改善されること
が判る。On the other hand, when the film is formed by using the number of shielding plates set by the present invention (eight), the film thickness unevenness is greatly improved as compared with the case where ten shielding plates are used. I understand.
【0032】[0032]
【発明の効果】本発明によれば曲率を有し、これが異な
る被成膜物にも、1種類の形状の遮蔽板で容易に膜厚む
らの少ない膜を成膜することができる。また、成膜工程
中に異なる形状の遮蔽板に交換する必要がないので、よ
り短時間での成膜が可能になる。更に、形状の異なる遮
蔽板を複数種類用意しておく必要がないので、コストを
低減する効果もある。According to the present invention, it is possible to easily form a film having a small thickness unevenness on a film to be formed having different curvatures by using one type of shielding plate. Further, since it is not necessary to replace the shielding plate with a different shape during the film forming process, the film can be formed in a shorter time. Furthermore, since it is not necessary to prepare a plurality of types of shielding plates having different shapes, there is also an effect of reducing costs.
【図1】は、本発明に係る成膜装置(真空蒸着装置)を
示す概念図である。FIG. 1 is a conceptual diagram showing a film forming apparatus (vacuum vapor deposition apparatus) according to the present invention.
【図2】は、本発明に係る成膜装置(真空蒸着装置)を
上方から見た概念図である。FIG. 2 is a conceptual diagram of a film forming apparatus (vacuum vapor deposition apparatus) according to the present invention as viewed from above.
【図3】は、本発明に係る遮蔽板の取り付け方法を示す
概念図である。FIG. 3 is a conceptual diagram showing a method of attaching a shielding plate according to the present invention.
Claims (4)
する成膜工程を有する成形体の製造方法であって、成膜
装置内の蒸着源と被成膜物の間に1種類の形状を有する
成膜粒子遮蔽板を設置するにあたり、前記成膜粒子遮蔽
板の設置枚数を前記成膜される膜の膜厚むらが略発生し
ないように成膜される枚数に設定する前記成膜粒子遮蔽
板の枚数制御工程を有することを特徴とする成形体の製
造方法。1. A method for manufacturing a molded body having a film forming step of forming a film on a film formation object by a vacuum evaporation method, wherein one type is provided between an evaporation source and a film formation object in a film formation apparatus. In setting the film-forming particle shielding plate having the shape described above, the number of the film-forming particle shielding plates to be installed is set to the number of films to be formed so that the film thickness of the film to be formed does not substantially occur. A method for producing a molded article, comprising a step of controlling the number of membrane particle shielding plates.
前記被成膜物の形状及び/又は成膜物質の情報に基づい
て行うことを特徴とする請求項1に記載の成形体の製造
方法。2. The step of controlling the number of film-formed particle shielding plates,
The method according to claim 1, wherein the method is performed based on information on a shape of the object to be film-formed and / or a film-forming substance.
より決定されることを特徴とする請求項1又は2に記載
の成形体の製造方法。式1 【数1】 式中、Lは遮蔽板の幅(図3のY軸方向の長さ)、rは
公転中心から補正位置までの距離、nは遮蔽板の枚数、
lは遮蔽板の取り付け軸の幅、dは補正位置で成膜され
た膜の膜厚、r0は公転中心から被成膜物中心までの距
離、d0はレンズ中心の膜厚である3. The method according to claim 1, wherein the shape of the film-forming particle shielding plate is determined by the following equation. Equation 1 In the formula, L is the width of the shielding plate (the length in the Y-axis direction in FIG. 3), r is the distance from the center of revolution to the correction position, n is the number of shielding plates,
l is the width of the mounting axis of the shield plate, d is the film thickness of the film formed at the correction position, r0 is the distance from the center of revolution to the center of the object, and d0 is the film thickness at the center of the lens.
源の設置部と、該設置部に対向する位置に被成膜物を設
置する被成膜物の保持部と、前記設置部と前記保持部と
の間に成膜粒子遮蔽板を有する成膜装置であって、設置
された前記成膜粒子遮蔽板の枚数は膜厚むらが発生しな
い条件に基づいて設定されたものであることを特徴とす
る成膜装置。4. A vacuum chamber, an installation section for an evaporation source installed in the vacuum chamber, a deposition object holding section for installing an object on a position facing the installation section, and the installation section. A film forming apparatus having a film-forming particle shielding plate between a unit and the holding unit, wherein the number of the installed film-forming particle shielding plates is set based on a condition under which film thickness unevenness does not occur. A film forming apparatus, comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29914999A JP2001123265A (en) | 1999-10-21 | 1999-10-21 | Manufacturing method of molding, and film depositing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29914999A JP2001123265A (en) | 1999-10-21 | 1999-10-21 | Manufacturing method of molding, and film depositing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001123265A true JP2001123265A (en) | 2001-05-08 |
Family
ID=17868768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29914999A Pending JP2001123265A (en) | 1999-10-21 | 1999-10-21 | Manufacturing method of molding, and film depositing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001123265A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116815140A (en) * | 2023-06-21 | 2023-09-29 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and process chamber thereof |
-
1999
- 1999-10-21 JP JP29914999A patent/JP2001123265A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116815140A (en) * | 2023-06-21 | 2023-09-29 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and process chamber thereof |
CN116815140B (en) * | 2023-06-21 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and process chamber thereof |
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