JP2001115297A - Cup type plating device - Google Patents
Cup type plating deviceInfo
- Publication number
- JP2001115297A JP2001115297A JP29446199A JP29446199A JP2001115297A JP 2001115297 A JP2001115297 A JP 2001115297A JP 29446199 A JP29446199 A JP 29446199A JP 29446199 A JP29446199 A JP 29446199A JP 2001115297 A JP2001115297 A JP 2001115297A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- wafer
- current
- cathode electrode
- cup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 235000012431 wafers Nutrition 0.000 description 49
- 238000003825 pressing Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体用のウェーハ
にめっきを施す技術に関するものであり、特にカップ式
めっき装置に関するものである。The present invention relates to a technique for plating a semiconductor wafer, and more particularly to a cup-type plating apparatus.
【０００２】[0002]
【従来の技術】従来、半導体用のウェーハにめっきを施
す装置として、カップ式めっき装置が知られている。こ
のカップ式めっき装置は、めっき槽開口部へ配置された
リング状のカソード電極に、ウェーハの周縁部を接触さ
せ、めっき槽内部に配置されたアノード電極と分極する
ことによって、ウェーハの被めっき面にめっき電流を供
給し、めっき処理を施すものである。従って、めっき槽
開口部へのウェーハを交換することで、順次めっき処理
が行える点から、小ロットの生産やめっき処理工程の自
動化に好適なものとして広く用いられているものであ
る。2. Description of the Related Art Conventionally, a cup type plating apparatus has been known as an apparatus for plating a semiconductor wafer. This cup-type plating apparatus contacts a peripheral edge of a wafer with a ring-shaped cathode electrode arranged in an opening of a plating tank, and polarizes the anode electrode arranged in the plating tank, thereby forming a plating surface of the wafer. Is supplied with a plating current to perform a plating process. Therefore, since the plating process can be performed sequentially by exchanging the wafer in the opening of the plating tank, it is widely used as suitable for production of small lots and automation of the plating process.
【０００３】近年、ウェーハの表面処理では、このカッ
プ式めっき装置を用い、予めシード金属がスパッタリン
グ法あるいはＣＶＤ法などによって被めっき面に被覆さ
れたウェーハへさらに銅などのめっき処理することが行
われている。このようなウェーハへのめっき処理は、ウ
ェーハの被めっき面全面で均一性の高いめっき処理、特
にめっき膜厚が被めっき面全面で一定となるようなめっ
き処理が要求されるものである。そのため、従来のカッ
プ式めっき装置では、この均一なめっき処理を実現すべ
く、ウェーハへのめっき電流の均一な供給をするため
に、ウェーハの非めっき面側（めっき処理を行わない面
側）から外力を加え、カソード電極へ押し付けることに
よって、ウェーハの周縁部とカソード電極とを全周にわ
たって均一に接触することで対応しているものである。[0003] In recent years, in the surface treatment of wafers, this cup-type plating apparatus is used to further perform a plating treatment of copper or the like on a wafer in which seed metal is coated on a surface to be plated in advance by a sputtering method or a CVD method. ing. Such a plating process on a wafer requires a highly uniform plating process on the entire surface to be plated of the wafer, particularly a plating process in which the plating film thickness is constant over the entire surface to be plated. Therefore, in the conventional cup-type plating apparatus, in order to realize this uniform plating process, in order to uniformly supply the plating current to the wafer, from the non-plating side of the wafer (the side on which the plating process is not performed). This is achieved by applying an external force and pressing against the cathode electrode so that the peripheral edge of the wafer and the cathode electrode are uniformly contacted over the entire circumference.
【０００４】しかしながら、最近、以下のような新たな
要求が生じてきており、従来のカップ式めっき装置では
十分に対応できなくなっている。それは、まず、第一に
ウェーハの全面にわたる均一な厚みのめっき処理の要望
である。そして、第二に、ウェーハにめっき処理をして
後の後工程で使用できる面積を増大すること、即ち、ウ
ェーハの有効使用面積をより広くすることが求められて
いる。さらに、生産性の向上の観点から、めっき処理速
度をさらに上昇させることも要求されている。[0004] However, recently, the following new requirements have arisen, and conventional cup-type plating apparatuses cannot sufficiently cope with them. First, there is a demand for a plating process having a uniform thickness over the entire surface of the wafer. Secondly, it is required to increase the area that can be used in a later process by plating the wafer, that is, to increase the effective use area of the wafer. Further, from the viewpoint of improving productivity, it is also required to further increase the plating processing speed.
【０００５】このような新たな要求に対して、ウェーハ
に供給するめっき電流を増加すること、カソード電極と
接触するウェーハの周縁部の面積を極力縮小することが
必要となる。そして、ウェーハの被めっき面全体へ均一
にめっき電流を供給するためにはウェーハの周縁部とカ
ソード電極との全周における接触部分で、均一な接触面
積とする必要がある。このことは、従来のカップ式めっ
き装置において、ウェーハを載置する際の位置あわせ精
度を向上させ、カソード電極との接触を確保するための
ウェーハへ加える押し付け圧を増加しなければならな
い。[0005] In response to such new requirements, it is necessary to increase the plating current supplied to the wafer and to reduce the area of the peripheral portion of the wafer in contact with the cathode electrode as much as possible. Then, in order to uniformly supply a plating current to the entire surface to be plated of the wafer, it is necessary to have a uniform contact area at a contact portion in the entire periphery between the peripheral portion of the wafer and the cathode electrode. This means that in the conventional cup-type plating apparatus, the positioning accuracy when placing the wafer must be improved, and the pressing pressure applied to the wafer to ensure contact with the cathode electrode must be increased.
【０００６】しかし、ウェーハを載置する際の位置あわ
せの精度を向上させることやウェーハの押し付け圧を増
加させることには限度があり、従来のカップ式めっき装
置では、ウェーハの周縁部とカソード電極との接触部の
面積を小さくして、めっき電流を増加させてめっき処理
を行うと、ウェーハに流れるめっき電流が被めっき面全
面で不均一になりやすく、被めっき面全面でのめっき膜
厚が不均一になるという現象が生じるのである。However, there is a limit to improving the positioning accuracy when mounting the wafer and increasing the pressing pressure of the wafer. In the conventional cup-type plating apparatus, the peripheral portion of the wafer and the cathode electrode are not provided. When the plating process is performed by increasing the plating current by reducing the area of the contact portion with the plating, the plating current flowing through the wafer tends to be uneven over the entire surface to be plated, and the plating film thickness over the entire surface to be plated is reduced. The phenomenon of non-uniformity occurs.
【０００７】[0007]
【発明が解決しようとする課題】そこで、本発明では、
従来のカップ式めっき装置を改善し、めっき面積の増大
及びめっき電流の増加に、安易且つ容易に対応でき、ウ
ェーハの被めっき面全面でのめっき膜厚が均一になるよ
うな、均一なめっき電流をウェーハに供給することがで
きるカップ式めっき装置を提供せんとするものである。Therefore, in the present invention,
Improvement of conventional cup type plating equipment, uniform plating current that can easily and easily cope with increase of plating area and increase of plating current, and uniform plating film thickness over the entire surface to be plated of wafer And a cup-type plating apparatus capable of supplying the wafer to the wafer.
【０００８】[0008]
【課題を解決するための手段】このような目的のために
本発明では、めっき槽開口部へ配置されるリング状のカ
ソード電極にウェーハの周縁部を接触させ、ウェーハと
めっき槽内部に配置されたアノード電極とを分極し、ウ
ェーハにめっき電流を供給することでめっき処理を施す
ようにしたカップ式めっき装置において、リング状のカ
ソード電極は複数に分割された分割カソード電極から形
成されるとともに各分割カソード電極とアノード電極と
によりカレントミラー回路を形成し、各分割カソードか
らウェーハに流れるめっき電流を均一に供給するように
したAccording to the present invention, for this purpose, the periphery of a wafer is brought into contact with a ring-shaped cathode electrode arranged in an opening of a plating tank, and the wafer is placed inside the plating tank. In a cup-type plating apparatus in which the anode electrode is polarized and the plating process is performed by supplying a plating current to the wafer, a ring-shaped cathode electrode is formed from a plurality of divided cathode electrodes, and A current mirror circuit is formed by the divided cathode electrode and the anode electrode, and the plating current flowing from each divided cathode to the wafer is uniformly supplied.
【０００９】本発明によると、カソード電極とウェーハ
の周縁部との接触部分における接触抵抗に影響されず
に、各分割カソード電極によって均一なめっき電流をウ
ェーハに供給できることとなる。従って、カソード電極
へのウェーハの押し付け圧力を増加させるために必要な
装置構造上の負担などが必要となくなる。また、本発明
のカップ式めっき装置にするためには、ウェーハの周縁
部と接触するような分割カソード、例えば、従来のリン
グ状のカソード電極を周方向に適宜分割して分割カソー
ド電極を準備し、その分割数に対応するトランジスタ
と、従来より使用している定電流電源と組み合わせて、
カレントミラー回路を形成すればよいため、従来のカッ
プ式めっき装置に対して安価且つ容易な改良をするだけ
で、ウェーハに均一なめっき処理が施すことが可能とな
る。According to the present invention, a uniform plating current can be supplied to the wafer by each divided cathode electrode without being affected by the contact resistance at the contact portion between the cathode electrode and the peripheral portion of the wafer. Therefore, there is no need to impose a load on the structure of the apparatus required to increase the pressure of pressing the wafer against the cathode electrode. Further, in order to make the cup-type plating apparatus of the present invention, a divided cathode that comes into contact with the peripheral portion of the wafer, for example, a divided ring-shaped cathode is prepared by appropriately dividing a conventional ring-shaped cathode in the circumferential direction. , By combining the transistor corresponding to the number of divisions with the constant current power supply conventionally used,
Since a current mirror circuit may be formed, a uniform plating process can be performed on a wafer only by making an inexpensive and easy improvement over a conventional cup-type plating apparatus.
【００１０】また、めっき処理速度を増加させるため、
めっき電流を増加させた場合、従来のカップ式めっき装
置では被めっき面全面でのめっき膜厚が著しく不均一と
なる傾向が生じたが、本発明のカップ式めっき装置で
は、各分割カソード電極から同一値の電流が供給される
ので、被めっき面全面で均一なめっき電流が常時供給で
きることになり、被めっき面全面で均一な膜厚のめっき
処理が可能となる。In order to increase the plating speed,
When the plating current is increased, in the conventional cup-type plating apparatus, the plating film thickness over the entire surface to be plated tends to be extremely non-uniform, but in the cup-type plating apparatus of the present invention, from each of the divided cathode electrodes, Since a current of the same value is supplied, a uniform plating current can always be supplied over the entire surface to be plated, and a plating process with a uniform film thickness can be performed over the entire surface to be plated.
【００１１】[0011]
【発明の実施の形態】以下、本発明の一実施形態を説明
する。図１は本実施形態によるカップ式めっき装置のめ
っき槽断面の概略を表したものである。図１で示すよう
に、本実施形態によるカップ式めっき装置１は、めっき
槽２の上部開口に沿ってウェーハ３を載置できるように
なっており、ウェーハ３の周縁部４と接触するように、
図２に示す如く分割カソード電極（Ｃ１〜Ｃ６）によっ
てリング状に形成されたカソード電極Ｃが配置されてい
る。カソード電極Ｃの下には、めっき液の漏洩防止用の
シールパッキン５が配置されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below. FIG. 1 schematically shows a cross section of a plating tank of a cup-type plating apparatus according to the present embodiment. As shown in FIG. 1, the cup-type plating apparatus 1 according to the present embodiment can place a wafer 3 along an upper opening of a plating tank 2 so as to be in contact with a peripheral portion 4 of the wafer 3. ,
As shown in FIG. 2, a cathode electrode C formed in a ring shape by divided cathode electrodes (C1 to C6) is arranged. Below the cathode electrode C, a seal packing 5 for preventing leakage of the plating solution is arranged.
【００１２】めっき槽２には、底部中央にめっき液供給
口６と、そして、載置されたウェーハ３に向けて上昇流
で、めっき液供給口６から供給されためっき液がめっき
槽２外部に流出できるようになっているめっき液流出口
７とが設けられている。さらに、めっき槽２底部には、
載置されるウェーハ３と対向するようにアノード電極８
が設置されている。The plating bath 2 is provided with a plating solution supply port 6 at the bottom center and a plating solution supplied from the plating solution supply port 6 in an ascending flow toward the mounted wafer 3. And a plating solution outlet 7 capable of flowing out to the outside. Furthermore, at the bottom of the plating tank 2,
The anode electrode 8 is opposed to the wafer 3 to be mounted.
Is installed.
【００１３】本実施形態でのカップ式めっき装置では、
次のようにしてカレントミラー回路を形成している。図
２で示すように、カソード電極Ｃは、Ｔｉのベース材に
ＴｉＮをコーティングした複合材料で、６つの分割カソ
ード電極（Ｃ１〜Ｃ６）によってリング状に形成されて
いるものである。この各分割カソード電極（Ｃ１〜Ｃ
６）とアノード電極８と、図示せぬ定電流電源とで、図
３に示すようなカレントミラー回路を形成した。In the cup type plating apparatus according to the present embodiment,
The current mirror circuit is formed as follows. As shown in FIG. 2, the cathode electrode C is a composite material in which a base material of Ti is coated with TiN, and is formed in a ring shape by six divided cathode electrodes (C1 to C6). Each of the divided cathode electrodes (C1 to C
6), the anode electrode 8, and a constant current power supply (not shown) formed a current mirror circuit as shown in FIG.
【００１４】ここで、カレントミラー回路について説明
すると、図３におけるＴr0とＴr1との電気的特性が同一
の場合、Ｔr0のコレクタ電流Ｉc0とＴr1のコレクタ電流
Ｉc1は、負荷抵抗（Ｃ１〜Ｃ６）の値によらず、同じ値
となる。そして、Ｒの値を設定することで、Ｉc0が決定
され、その値が鏡のようにＩc1〜Ｉc6のそれぞれに反映
され、同じコレクタ電流値になるものである。Here, the current mirror circuit will be described. If the electrical characteristics of Tr0 and Tr1 in FIG. 3 are the same, the collector current Ic0 of Tr0 and the collector current Ic1 of Tr1 are equal to those of the load resistors (C1 to C6). The value is the same regardless of the value. Then, by setting the value of R, Ic0 is determined, and the value is reflected on each of Ic1 to Ic6 like a mirror, so that the same collector current value is obtained.
【００１５】このようなカレントミラー回路を形成する
ことで、ウェーハ３に供給されるめっき電流は、ウェー
ハ３の周縁部４とカソード電極Ｃの接触部分の面積が周
方向で差異が生じたとしても、即ちウェーハ３の周縁部
４と各分割カソード電極（Ｃ１〜Ｃ６）のそれぞれとで
接触抵抗値に差異が生じていたにしても、各分割カソー
ド電極（Ｃ１〜Ｃ６）からは、それぞれ一定の電流が供
給されることになるので、ウェーハ３の被めっき面全面
において均一なめっき電流が供給されることになる。By forming such a current mirror circuit, the plating current supplied to the wafer 3 can be adjusted even if the area of the contact portion between the peripheral portion 4 of the wafer 3 and the cathode electrode C varies in the circumferential direction. That is, even if there is a difference in the contact resistance value between the peripheral portion 4 of the wafer 3 and each of the divided cathode electrodes (C1 to C6), a constant value is obtained from each of the divided cathode electrodes (C1 to C6). Since the current is supplied, a uniform plating current is supplied over the entire surface of the wafer 3 to be plated.
【００１６】[0016]
【発明の効果】本発明のカップ式めっき装置によれば、
ウェーハのめっき処理を行うに際して、安価且つ容易に
めっき面積の増大及びめっき電流の増加を行うことが可
能となり、ウェーハの被めっき面全面での均一なめっき
電流を供給することができことになるので、ウェーハの
被めっき面全面で非常に均一性の高いめっき膜厚を実現
することができる。According to the cup type plating apparatus of the present invention,
When plating a wafer, the plating area and plating current can be increased easily and inexpensively, and a uniform plating current can be supplied over the entire surface of the wafer to be plated. In addition, a highly uniform plating film thickness can be realized over the entire surface of the wafer to be plated.
【図１】本実施形態におけるカップ式めっき装置のめっ
き槽断面図。FIG. 1 is a sectional view of a plating tank of a cup-type plating apparatus according to an embodiment.
【図２】カソード電極の平面概略図FIG. 2 is a schematic plan view of a cathode electrode.
【図３】カレントミラー回路図FIG. 3 is a current mirror circuit diagram.
１ カップ式めっき装置 ２ めっき槽 ３ ウェーハ ４ 周縁部 ５ シールパッキン ６ めっき液供給口 ７ めっき液流出口 ８ アノード電極 Ｃ カソード電極 Ｃ１〜Ｃ６ 分割カソード電極 DESCRIPTION OF SYMBOLS 1 Cup-type plating apparatus 2 Plating tank 3 Wafer 4 Peripheral part 5 Seal packing 6 Plating solution supply port 7 Plating solution outlet 8 Anode electrode C Cathode electrode C1-C6 Split cathode electrode
Claims (1)
カソード電極にウェーハの周縁部を接触させ、ウェーハ
とめっき槽内部に配置されたアノード電極とを分極し、
ウェーハにめっき電流を供給することでめっき処理を施
すようにしたカップ式めっき装置において、 リング状のカソード電極は複数に分割された分割カソー
ド電極から形成されるとともに各分割カソード電極とア
ノード電極とによりカレントミラー回路を形成し、各分
割カソードからウェーハに流れるめっき電流を均一に供
給するようにしたことを特徴とするカップ式めっき装
置。1. A method in which a peripheral edge of a wafer is brought into contact with a ring-shaped cathode electrode arranged in an opening of a plating tank to polarize the wafer and an anode electrode arranged in the plating tank.
In a cup-type plating apparatus in which a plating process is performed by supplying a plating current to a wafer, a ring-shaped cathode electrode is formed from a plurality of divided cathode electrodes, and each divided cathode electrode and an anode electrode A cup-type plating apparatus, wherein a current mirror circuit is formed to uniformly supply a plating current flowing from each divided cathode to a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29446199A JP4371494B2 (en) | 1999-10-15 | 1999-10-15 | Cup type plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29446199A JP4371494B2 (en) | 1999-10-15 | 1999-10-15 | Cup type plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001115297A true JP2001115297A (en) | 2001-04-24 |
| JP4371494B2 JP4371494B2 (en) | 2009-11-25 |
Family
ID=17808090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29446199A Expired - Fee Related JP4371494B2 (en) | 1999-10-15 | 1999-10-15 | Cup type plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4371494B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010133220A3 (en) * | 2009-05-22 | 2011-04-14 | Huebel Egon | Method and device for the controlled electrolytic treatment of thin layers |
| US9334578B2 (en) | 2008-11-18 | 2016-05-10 | Cypress Semiconductor Corporation | Electroplating apparatus and method with uniformity improvement |
| KR20160113007A (en) * | 2015-03-20 | 2016-09-28 | 램 리써치 코포레이션 | Control of current density in an electroplating apparatus |
-
1999
- 1999-10-15 JP JP29446199A patent/JP4371494B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9334578B2 (en) | 2008-11-18 | 2016-05-10 | Cypress Semiconductor Corporation | Electroplating apparatus and method with uniformity improvement |
| WO2010133220A3 (en) * | 2009-05-22 | 2011-04-14 | Huebel Egon | Method and device for the controlled electrolytic treatment of thin layers |
| CN102459716A (en) * | 2009-05-22 | 2012-05-16 | 索蒙特有限责任公司 | Method and device for the controlled electrolytic treatment of thin layers |
| KR20160113007A (en) * | 2015-03-20 | 2016-09-28 | 램 리써치 코포레이션 | Control of current density in an electroplating apparatus |
| KR102653496B1 (en) | 2015-03-20 | 2024-04-02 | 램 리써치 코포레이션 | Control of current density in an electroplating apparatus |
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| JP4371494B2 (en) | 2009-11-25 |
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