JPH03108354A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPH03108354A JPH03108354A JP1246032A JP24603289A JPH03108354A JP H03108354 A JPH03108354 A JP H03108354A JP 1246032 A JP1246032 A JP 1246032A JP 24603289 A JP24603289 A JP 24603289A JP H03108354 A JPH03108354 A JP H03108354A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- metal ring
- chuck
- wafer
- base body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 4
- 239000000498 cooling water Substances 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 238000009434 installation Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体製造装置に関し、
セラミックで構成された静電チャックを装置に固定する
際に、局部的に応力が集中しない構成となすことを目的
とし、
セラミック製の基体を有し、かつウェーハが吸着される
静電チャックが、取付は部材に支持され内設された半導
体製造装置であって、前記静電チャックは基体の周囲に
焼きばめされた金属環を有し、前記環が着脱可能に、か
つ液密可能に取付は部材に設けられた冷却手段に螺着さ
れてなるように構成する。[Detailed Description of the Invention] [Summary] With regard to semiconductor manufacturing equipment, the purpose of this invention is to create a structure in which stress is not locally concentrated when an electrostatic chuck made of ceramic is fixed to the equipment. A semiconductor manufacturing device includes an electrostatic chuck having a base body and a wafer adsorbed therein, and the electrostatic chuck has a metal ring shrink-fitted around the base body. The ring is configured to be removably and liquid-tightly screwed onto a cooling means provided on the member.
本発明は、半導体製造装置に係わり、特に半導体ウェー
ハの吸着に用いられる静電チャックの構成に関する。The present invention relates to semiconductor manufacturing equipment, and more particularly to the structure of an electrostatic chuck used to attract a semiconductor wafer.
近年、エレクトロニクスの発展は目ざましいものがある
が、その発展は、半導体デバイスの技術革新に負うとこ
ろが大きい。The development of electronics has been remarkable in recent years, and this development is largely due to technological innovations in semiconductor devices.
中でも、シリコン半導体を用いた集積回路の大規模・高
集積化は、非常に急速に推移しており、１チツプ内に集
積される素子数は、メモリ素子の容量で見て、数年単位
で４倍に拡大している。Above all, the large scale and high integration of integrated circuits using silicon semiconductors is progressing extremely rapidly, and the number of elements integrated into one chip is increasing every few years in terms of memory element capacity. It has expanded four times.
それに伴い、シリコンウェーハからデバイスに仕上げる
までの一連の工程の中で、いわゆるつ工−ハプロセスと
呼ばれるパターニングが終了するまでの工程で、ウェー
ハの取り扱いを如何に効率よく、しかも、安定に行うか
が、生産性向上の上から重要である。Along with this, the question is how to efficiently and stably handle wafers during the series of processes from silicon wafers to devices, up to the completion of patterning, the so-called tsu-ha process. is important from the viewpoint of improving productivity.
ウェーハプロセスには、一般に、酸化、レジスト処理、
露光、現像、エツチング、不純物導入といった幾つかの
工程が繰り返されるが、その工程の各所でウェーハの保
持が行われる。Wafer processing generally includes oxidation, resist processing,
Several steps such as exposure, development, etching, and impurity introduction are repeated, and the wafer is held at various points during the steps.
このウェーハを保持する治具には各種あるが、その１つ
に、電界のクーロン力を利用した静電チャックがある。There are various types of jigs for holding the wafer, one of which is an electrostatic chuck that utilizes the Coulomb force of an electric field.
静電チャックは、真空に吸引して吸着する真空チャック
を行うことができない真空装置の中などにおいて、ウェ
ーハ処理を行うときに用いられるが、機械的なチャック
方式と比べて機械的な摺動がないので発塵がなく、歩留
り向上に対して有利である。そのため、例えば、ドライ
エツチングとかＣＶＤ （化学的気相成膜）とかの工程
においては、静電チャック方式に移行しつつある。Electrostatic chucks are used when processing wafers in vacuum equipment where vacuum chucks cannot be used, but compared to mechanical chucks, they require less mechanical sliding. Since there is no dust, there is no dust generation, which is advantageous for improving yield. Therefore, for example, in processes such as dry etching and CVD (chemical vapor deposition), electrostatic chuck systems are being used.
〔従来の技術〕
第３図は静電チャックの一例を説明する斜視図、第４図
は第３図のＸ−Ｘ断面図である。[Prior Art] FIG. 3 is a perspective view illustrating an example of an electrostatic chuck, and FIG. 4 is a sectional view taken along line XX in FIG. 3.
第３〜４図において、静電チャック１は、工作機械にお
いて被加工物を吸着するものでは、方形の形状もあるが
、被吸着物がシリコンウェーハなどの場合には、円形の
形状が多い。In FIGS. 3 and 4, the electrostatic chuck 1 may have a rectangular shape if it is used to attract a workpiece in a machine tool, but it is often circular if the workpiece is a silicon wafer or the like.
基体２は、一般に、セラミック類である。そして、この
基体２のウェーハ３を吸着する凸状の表面には、絶縁膜
１０が被覆されており、この絶縁膜１０は、例えば膜厚
１００〜３００μｍの有機の絶縁体を貼着したり、基体
２と同じセラミックで、厚さ５００μｍ程度になるよう
に一体焼結したりして設けられている。Substrate 2 is generally ceramic. The convex surface of the base 2 that attracts the wafer 3 is coated with an insulating film 10, and this insulating film 10 may be formed by pasting an organic insulator with a thickness of 100 to 300 μm, for example, or It is made of the same ceramic as the base 2, and is integrally sintered to a thickness of about 500 μm.
この絶縁膜ｌＯを剥いでみると、その下には電極１１が
設けられている。When this insulating film IO is peeled off, an electrode 11 is provided underneath.
この電極１１は、電極１１とウェーハ３との間に高電圧
を印加してクーロン力を生じさせるもので、ここでは、
同心円状の櫛歯状パターン電極が交互に配置された形状
になっている。This electrode 11 applies a high voltage between the electrode 11 and the wafer 3 to generate Coulomb force, and here,
It has a shape in which concentric comb-like pattern electrodes are arranged alternately.
ただし、この電極１１のパターン形状は、円を２つに割
った形状であったり、九十九折り形状であったり、ウェ
ーハ３などの被吸着物の形状によって種々の形態が採ら
れている。However, the pattern shape of this electrode 11 may be a shape of a circle divided into two, a shape of a 99-fold shape, or various forms depending on the shape of the object to be attracted, such as the wafer 3.
そして、ウェーハ３などの被吸着物を吸着する際には、
電極Ｉｆから引き出された端子Ｉ２に、図示してない高
圧回路から、数ｋＶの高い直流電圧が印加される。When adsorbing an object such as wafer 3,
A high DC voltage of several kV is applied to the terminal I2 drawn out from the electrode If from a high voltage circuit (not shown).
また、電極１１の隙間には、底から絶縁膜１ｏまで貫通
した小孔１３が適宜設けられている形態のものもあり、
この小孔１３は、例えば絶縁膜１ｏとウェーハ３との隙
間にガスを流し込んで、冷却を行う目的などに用いられ
ている。In addition, there is a form in which a small hole 13 penetrating from the bottom to the insulating film 1o is appropriately provided in the gap between the electrodes 11.
This small hole 13 is used, for example, for the purpose of cooling by flowing gas into the gap between the insulating film 1o and the wafer 3.
凸状の表面から１段下がった基体２の周囲には、種々の
製造装置に取付けるとき都合がよいように、つば１４が
設けられて段付きになっている。A collar 14 is provided around the periphery of the base body 2, which is one step lower than the convex surface, to make it convenient for attachment to various manufacturing devices.
第２図は従来の静電チャックの取付は構成図である。FIG. 2 is a configuration diagram showing the installation of a conventional electrostatic chuck.
同図において、１は静電チャック、３は、こ＼ではウェ
ーハ、４は装置の取付は部、１７は抑え板、７はねじで
ある。In the figure, 1 is an electrostatic chuck, 3 is a wafer, 4 is a part for mounting the device, 17 is a holding plate, and 7 is a screw.
装置の取付は部材４は、静電チャック１の基体２に設け
られたつば１４が嵌まるように、段差１５の付いた取付
は孔１６が設けられている。そして、この取付は孔１６
に静電チャック１が伏せた形で嵌まり込み、抑え板１７
で抑えられてねじ７で固定されている。For mounting the device, the member 4 is provided with a mounting hole 16 with a step 15 so that a flange 14 provided on the base 2 of the electrostatic chuck 1 is fitted therein. This installation is done through hole 16.
The electrostatic chuck 1 is fitted face down into the holding plate 17.
It is held down and fixed with screws 7.
ところが、静電チャック１の基体２は、セラミック類な
ので硬くて脆い。しかも、取付は孔１６の段差１５は精
度よ（機械加工できるが、基体２のつば１４は焼物なの
で高い精度が望めない。However, since the base body 2 of the electrostatic chuck 1 is made of ceramic, it is hard and brittle. Moreover, the height difference 15 of the hole 16 can be mounted with high precision (although it can be machined, the collar 14 of the base 2 is made of ceramic material, so high precision cannot be expected).
そのため、静電チャック１を取付は孔１６に嵌めて抑え
板１７によって支持しながらねし止めすると、つば１４
の付は根部分に応力集中が間々起こる。Therefore, when installing the electrostatic chuck 1 by fitting it into the hole 16 and screwing it while supporting it with the restraining plate 17, the collar 14
At nosuke, stress concentration occurs at the roots.
この応力集中を防ぐには、つば１４を段付きにしないで
、緩やかな丸みを付けたり、傾斜を付けたりする方法も
ある。In order to prevent this stress concentration, there is a method in which the collar 14 is not stepped but is gently rounded or sloped.
しかし、何れにしても取付は孔１６が大きくならないよ
うに、ひいては装置全体の寸法も大きくならないように
しながら、つば１４に応力が集中しないようにすること
は厄介である。However, in any case, it is difficult to install it so that the hole 16 does not become large, and therefore the size of the entire device does not become large, and stress is not concentrated on the flange 14.
以上述べたように、従来の静電チャックの取付は方法に
おいては、静電チャックの周辺に設けられた段付きのっ
ぽと、装置の取付は孔の周辺に設けられた段差とを嵌め
合わせ、ねじ止めして固定していた。As mentioned above, the conventional method for installing an electrostatic chuck is to fit the stepped lip provided around the electrostatic chuck and the step provided around the hole to install the device, and then screw It was stopped and fixed.
しかし、つばの付は根に応力が集中することを防ぐこと
が厄介なので、ねじ止めする際に、早々につばが破損し
てしまったり、あるいは、付は根に微細な亀裂が生じて
、その亀裂が後々破損の原因になったりする問題があっ
た。However, with the collar, it is difficult to prevent stress from concentrating on the roots, so when screwing it down, the collar may be damaged prematurely, or microscopic cracks may form in the roots. There was a problem that cracks could cause damage later on.
本発明は、セラミックで構成された静電チャックを装置
に固定する際に、局部的に応力が集中しないような構成
となした静電チャックを取り付けてなる半導体製造装置
を提供することを目的としている。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor manufacturing device equipped with an electrostatic chuck configured to prevent local stress concentration when fixing an electrostatic chuck made of ceramic to the device. There is.
上で述べた課題は、
セラミック類の基体を有し、かつウェーハが吸着される
静電チャックが、取付は部材に支持され内設された半導
体製造装置であって、
前記静電チャックは基体の周囲に焼きばめされた金属環
を有し、
前記環が着脱可能に、かつ液密可能に取付は部材に設け
られた冷却手段に螺着されてなるように構成された半導
体製造装置によって達成される。The problem described above is a semiconductor manufacturing device in which an electrostatic chuck having a ceramic base and to which a wafer is attracted is installed inside and supported by a member, and the electrostatic chuck is attached to the base. Achieved by semiconductor manufacturing equipment having a metal ring shrink-fitted around the periphery, the ring being removably and liquid-tightly screwed onto a cooling means provided on the member. be done.
静電チャックを各種の半導体製造装置にねじ止めして取
り付けるに際して、基体の周囲に局部的に応力が集中す
るために、セラミック類の基体が破損を起こしてしまう
従来の静電チャックに替えて、本発明においては、取り
付けに際してそのような応力が集中しないようにしてい
る。In place of conventional electrostatic chucks, which cause damage to ceramic bases due to localized stress concentration around the base when screwing and attaching electrostatic chucks to various types of semiconductor manufacturing equipment, In the present invention, such stress is not concentrated during installation.
すなわち、本来は硬くて脆いセラミックを、直接ねじ止
めなどによって固定することに無理があり、本発明にお
いては、固定する箇所を金属材料に置き換えるようにし
ている。そして、その金属材料に置き換えるのに、セラ
ミックと金属との焼きばめの技術を利用している。That is, it is difficult to directly fix ceramics, which are originally hard and brittle, by screwing or the like, so in the present invention, the fixing parts are replaced with metal materials. In order to replace it with a metal material, the technology of shrink fitting ceramic and metal is used.
焼きばめは、加熱膨張させた金属の輪を軸などに嵌めて
、冷却収縮させて拘持させる嵌め合い方法の１つであり
、本発明においては、例えばアルミニウムなどの金属製
の環を加熱して膨張させ、静電チャックのセラミック類
の基体の周囲に嵌めて冷却し固着させている。Shrink fitting is a fitting method in which a heated and expanded metal ring is fitted onto a shaft, etc., and then cooled and contracted to hold it in place.In the present invention, for example, a metal ring made of aluminum or the like is heated It is expanded, fitted around the ceramic base of the electrostatic chuck, cooled, and fixed.
セラミックは圧縮強度が引っ張り強度よりも５倍程度大
きいので、金属環による焼きばめに対しては極めて具合
がよい。Since the compressive strength of ceramic is about five times greater than the tensile strength, it is extremely suitable for shrink fitting with metal rings.
そして、装置の取付は部材に固定するに際しては、この
金属環の部分でねじ止めを行い、セラミック類の基体に
直接応力が掛からないようにしている。When the device is attached to a member, the metal ring is screwed to prevent direct stress from being applied to the ceramic base.
さらに、取付は部材には、例えば冷却水が循環する溝状
の冷却手段を設け、液密性を保つために、例えばＯリン
グを介して金属環の部分をねじ止めし、直に環を冷却す
るようにしている。Furthermore, for installation, the member is provided with, for example, a groove-shaped cooling means through which cooling water circulates, and in order to maintain liquid tightness, the metal ring part is screwed, for example, through an O-ring, and the ring is directly cooled. I try to do that.
こうして、静電チャックが破損することを防ぎ、しかも
、効率よく静電チャックを冷却しながら作業を行うこと
が可能となる。In this way, it is possible to prevent the electrostatic chuck from being damaged and to perform work while efficiently cooling the electrostatic chuck.
第１図は本発明の実施例の取付は構成図である。 FIG. 1 is an installation configuration diagram of an embodiment of the present invention.
同図において、１は静電チャック、２は基体、３はウェ
ーハ、４は取付は部材、５は金属環、６は冷却手段であ
る。In the figure, 1 is an electrostatic chuck, 2 is a base, 3 is a wafer, 4 is a mounting member, 5 is a metal ring, and 6 is a cooling means.
静電チャック１は、５インチのシリコンのつ工−ハ３が
吸着できる基体２がセラミック類のもので、呼び寸法で
外径が２２０閣φ、厚さが１２ｍｍである。The electrostatic chuck 1 has a ceramic substrate 2 capable of adsorbing a 5-inch silicon tool 3, and has a nominal outer diameter of 220 mm and a thickness of 12 mm.
また、金属環５は、基体２の外形の実寸法より小さ目に
した内径２２０ｍφ、外形３２０■φ、厚さ１２ａ＋ｓ
のドーナツ型のアルミニウム環で、この金属環５を基体
２に焼きばめしている。The metal ring 5 has an inner diameter of 220 mφ, an outer diameter of 320 mm, and a thickness of 12 a+s, which are smaller than the actual outer dimensions of the base body 2.
This metal ring 5 is shrink-fitted to the base 2, and is a donut-shaped aluminum ring.
基体２の周囲のセラミックの面は一様ではなく、形状も
厳密にいえば真円ではないが、アルミニウムのような比
較的柔らかい金属環の場合には、基体と金属環とはしっ
くり嵌合されている。The ceramic surface around the base 2 is not uniform, and the shape is not exactly a perfect circle, but in the case of a relatively soft metal ring such as aluminum, the base and the metal ring fit snugly. ing.
一方、取付は部材４には、内径２３５ｍａ＋φ、幅１５
■、深さＩＯａ＋−の溝８が掘ってあり、その溝８の外
側で、取付は部材４に止めねじ７で固定できるようにな
っている。そして、図示してないが、外から冷却用の水
をこの溝８の中に流せるようになっており、冷却手段６
が構成されている。On the other hand, for installation, member 4 has an inner diameter of 235 mm + φ and a width of 15 mm.
(2) A groove 8 having a depth of IOa+- is dug, and it can be fixed to the member 4 with a set screw 7 on the outside of the groove 8. Although not shown, cooling water can be flowed into this groove 8 from the outside, and the cooling means 6
is configured.
静電チャックｌを取付は部材４にねじ７で固定するには
、溝８の内径の内側と外形の外側にそれぞれＯリング９
を介在させて、液漏れしないように弾付勢的に締めつけ
る。To fix the electrostatic chuck l to the member 4 with the screw 7, insert an O-ring 9 on the inside of the inner diameter of the groove 8 and on the outside of the outer diameter.
interpose and tighten elastically to prevent liquid leakage.
この冷却手段６は、静電チャックｌを加熱して、つまり
ウェーハ３を加熱して処理を行うような場合に、金属環
５を冷却して基体２に例する圧縮応力の低下を防ぐのに
用いる。This cooling means 6 is used to cool the metal ring 5 and prevent a decrease in the compressive stress in the base body 2 when the electrostatic chuck 1 is heated, that is, the wafer 3 is heated and processed. use
こ−では、金属環にアルミニウムを用いたが、基体の回
りに鉢巻き状に柔らかい金属を巻いて、その回りに別の
金属環を焼きばめすることもできる。従って、金属環の
寸法や材質などには、種々の変形が可能である。In this case, aluminum was used for the metal ring, but it is also possible to wrap a soft metal around the base like a headband and shrink-fit another metal ring around it. Therefore, various modifications can be made to the dimensions, material, etc. of the metal ring.
〔発明の効果］
従来の静電チャックは、装置に取り付ける際に、基体を
構成しているセラミックに引っ張り応力が掛かって、破
損したり、破損の原因となる微細な亀裂が生じたりする
障害が間々起こる。[Effects of the Invention] When conventional electrostatic chucks are attached to equipment, tensile stress is applied to the ceramic that makes up the base, resulting in breakage or the formation of minute cracks that can cause breakage. It happens from time to time.
それに対して、本発明になる静電チャックによれば、金
属環の焼きばめによって基体を構成しているセラミック
に生じる残留圧縮応力が絶えず掛かっているので、この
ような障害を皆無にすることができる。On the other hand, according to the electrostatic chuck of the present invention, residual compressive stress generated in the ceramic that constitutes the base body due to the shrink fit of the metal ring is constantly applied, so it is possible to completely eliminate such problems. I can do it.
従って、今後半導体製造装置において、ますます多用さ
れようとしている静電チャックの信顧性が増し、本発明
は半導体装置の製造工程における生産性の向上にきにす
るところが大である。Therefore, the reliability of electrostatic chucks, which are expected to be used more and more often in semiconductor manufacturing equipment in the future, will increase, and the present invention will be of great use in improving productivity in the manufacturing process of semiconductor devices.
第１図は本発明の実施例の取付は構成図、第２図は従来
の静電チャックの取付は構成図、第３図は静電チャック
の一例を説明する斜視図、第４図は第３図のＸ−Ｘ断面
図、
である。
図において、
１は静電チャック、
３はウェーハ、
５は金属環、
である。
２は基体、
４は取付は部材、
６は冷却手段、
第
凶
□−ト＼
探未の静電チマックの取付（ｆｆｌ或凶第２図
３０８−FIG. 1 is a configuration diagram showing the installation of an embodiment of the present invention, FIG. 2 is a configuration diagram of the installation of a conventional electrostatic chuck, FIG. 3 is a perspective view illustrating an example of an electrostatic chuck, and FIG. 3 is a sectional view taken along line X-X in FIG. 3. In the figure, 1 is an electrostatic chuck, 3 is a wafer, and 5 is a metal ring. 2 is the base body, 4 is the mounting member, 6 is the cooling means, and the installation of the unexplored electrostatic capacitor (ffl or figure 2 308-
Claims (1)
が吸着される静電チャック（１）が、取付け部材（４）
に支持され内設された半導体製造装置であって、 前記静電チャック（１）は前記基体（２）の周囲に焼き
ばめされた金属環（５）を有し、 前記環（５）が着脱可能に、かつ液密可能に前記取付け
部材（４）に設けられた冷却手段（６）に螺着されてな
ることを特徴とする半導体製造装置。[Claims] A ceramic substrate (2) and a wafer (3)
The electrostatic chuck (1) that is attracted to the mounting member (4)
The electrostatic chuck (1) has a metal ring (5) shrink-fitted around the base (2), and the ring (5) is A semiconductor manufacturing apparatus characterized in that the cooling means (6) is removably and liquid-tightly screwed onto the cooling means (6) provided on the mounting member (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1246032A JPH03108354A (en) | 1989-09-21 | 1989-09-21 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1246032A JPH03108354A (en) | 1989-09-21 | 1989-09-21 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03108354A true JPH03108354A (en) | 1991-05-08 |
Family
ID=17142439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1246032A Pending JPH03108354A (en) | 1989-09-21 | 1989-09-21 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03108354A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5673167A (en) * | 1993-06-07 | 1997-09-30 | Applied Materials, Inc. | Support platen with removable insert useful in semiconductor processing apparatus |
| JP2006344955A (en) * | 2005-06-09 | 2006-12-21 | Ngk Insulators Ltd | Electrostatic chuck |
| KR100804169B1 (en) * | 2005-12-31 | 2008-02-18 | 주식회사 아이피에스 | A susceptor for depositing thin film chamber |
| CN110767667A (en) * | 2019-11-26 | 2020-02-07 | 上海微阱电子科技有限公司 | Image sensor structure and forming method |
-
1989
- 1989-09-21 JP JP1246032A patent/JPH03108354A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5673167A (en) * | 1993-06-07 | 1997-09-30 | Applied Materials, Inc. | Support platen with removable insert useful in semiconductor processing apparatus |
| US6509069B1 (en) | 1993-06-07 | 2003-01-21 | Applied Materials, Inc. | Method of reducing the cleaning requirements of a dielectric chuck surface |
| JP2006344955A (en) * | 2005-06-09 | 2006-12-21 | Ngk Insulators Ltd | Electrostatic chuck |
| KR100804169B1 (en) * | 2005-12-31 | 2008-02-18 | 주식회사 아이피에스 | A susceptor for depositing thin film chamber |
| CN110767667A (en) * | 2019-11-26 | 2020-02-07 | 上海微阱电子科技有限公司 | Image sensor structure and forming method |
| CN110767667B (en) * | 2019-11-26 | 2022-07-08 | 上海微阱电子科技有限公司 | Image sensor structure and forming method |
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