JP2000049144A - Electrode plate in plasma treatment apparatus - Google Patents
Electrode plate in plasma treatment apparatusInfo
- Publication number
- JP2000049144A JP2000049144A JP10212761A JP21276198A JP2000049144A JP 2000049144 A JP2000049144 A JP 2000049144A JP 10212761 A JP10212761 A JP 10212761A JP 21276198 A JP21276198 A JP 21276198A JP 2000049144 A JP2000049144 A JP 2000049144A
- Authority
- JP
- Japan
- Prior art keywords
- electrode plate
- hole
- processing apparatus
- gas blowing
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体製造等に好適
に使用されるプラズマ処理装置用電極板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode plate for a plasma processing apparatus, which is preferably used for manufacturing semiconductors.
【０００２】[0002]
【従来の技術】一般に半導体のエッチング工程等に使用
されるプラズマ処理装置用電極板は、セラミック、炭
素、シリコン等の円板状基板の中央部にプロセスガスを
吹出すための貫通小穴からなる多数のガス吹出し穴を有
し、その外周部に電極板をプラズマ処理装置にねじで取
付けるための複数の電極板取付穴を有する構成になって
いる。2. Description of the Related Art Generally, an electrode plate for a plasma processing apparatus used in a semiconductor etching process or the like has a large number of small through holes for blowing a process gas into a central portion of a disk-shaped substrate made of ceramic, carbon, silicon, or the like. , And a plurality of electrode plate mounting holes for mounting the electrode plate to the plasma processing apparatus with screws on the outer peripheral portion thereof.
【０００３】上記のような構成の電極板では、ガス吹出
し穴は一般にφ１ｍｍ以下の小さな穴が多数並んで配置
されており、同様な配置のガス吹出し穴を有するプラズ
マ処理装置への取付に際し、ねじと電極板取付穴とのギ
ャップが大きいと、プラズマ処理装置のガス吹出し穴と
電極板のガス吹出し穴の位置ずれが生ずるという問題が
ある。[0003] In the electrode plate having the above-described structure, a large number of small gas blowout holes having a diameter of 1 mm or less are generally arranged side by side. If the gap between the electrode plate mounting hole and the electrode plate mounting hole is large, there is a problem that the gas outlet of the plasma processing apparatus and the gas outlet of the electrode plate are displaced.
【０００４】従来、このような位置ずれを修正するた
め、装置に電極板を仮どめした後に、電極板のガス吹出
し穴から細いピンを通し、装置側取付板のガス吹出し穴
と電極板のガス吹出し穴の位置合わせをする方法などが
とられているが、ピン挿入の際にガス吹出し穴内部が傷
つき、パーティクル発生の原因となるなどの問題があっ
た。Conventionally, in order to correct such a displacement, after temporarily holding the electrode plate in the device, a thin pin is passed through a gas blowout hole of the electrode plate, and a gas blowout hole of the device side mounting plate and the electrode plate. Although a method of adjusting the position of the gas blowout hole is used, there is a problem that the inside of the gas blowout hole is damaged at the time of inserting a pin, and particles are generated.
【０００５】[0005]
【発明が解決しようとする課題】本発明の目的は、プラ
ズマ処理装置への取付に際し、ガス吹出し穴の内面を傷
つけることなく電極板ガス吹出し穴と装置のガス吹出し
穴のずれを小さくすることができるプラズマ処理装置用
電極板を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to reduce the displacement between the electrode plate gas blowout hole and the gas blowout hole of the apparatus without damaging the inner surface of the gas blowout hole when attaching the gas blowout hole to the plasma processing apparatus. An object of the present invention is to provide an electrode plate for a plasma processing apparatus that can be used.
【０００６】[0006]
【課題を解決するための手段】すなわち、本発明は、多
数のガス吹出し穴を有するプラズマ処理装置用電極板に
おいて、その外周部に、電極板をプラズマ処理装置に取
付ける際に、プラズマ処理装置側のガス吹出し穴と電極
板のガス吹出し穴との位置合わせをするための小穴を設
けたことを特徴とするプラズマ処理装置用電極板に関す
る。That is, the present invention relates to an electrode plate for a plasma processing apparatus having a large number of gas blowout holes. The present invention relates to an electrode plate for a plasma processing apparatus, which is provided with a small hole for aligning the gas blowout hole of the above with the gas blowout hole of the electrode plate.
【０００７】[0007]
【発明の実施の形態】本発明の電極板は、ガラス状炭
素、単結晶シリコン、多結晶シリコン又は炭化硅素等の
材質からなっている。通常はガラス状炭素からなるもの
が用いられる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The electrode plate of the present invention is made of a material such as glassy carbon, single crystal silicon, polycrystal silicon or silicon carbide. Usually, a material composed of glassy carbon is used.
【０００８】ガラス状炭素は、熱硬化性樹脂硬化物を、
炭化、高温処理して得られる炭素材料であり、用いられ
る熱硬化性樹脂としては特に制限はないが、フェノール
樹脂、エポキシ樹脂、不飽和ポリエステル樹脂、フラン
樹脂、メラミン樹脂、アルキッド樹脂、キシレン樹脂等
を挙げることができる。The glassy carbon is obtained by curing a thermosetting resin,
It is a carbon material obtained by carbonization and high-temperature treatment. The thermosetting resin used is not particularly limited, but phenol resin, epoxy resin, unsaturated polyester resin, furan resin, melamine resin, alkyd resin, xylene resin, etc. Can be mentioned.
【０００９】電極板の大きさ及び形状としては、特に制
限されないが、通常は円板状であり、その外径１５０〜
３５０ｍｍ、厚さが３〜７ｍｍのものが好ましい。ガス
吹出し穴の大きさや数はエッチング条件等により異なる
が穴径で０．３〜１．０ｍｍが好ましく、穴数は１００
〜１０００個が好ましい。電極をプラズマ処理装置に取
付けるための外周部の電極板取付穴は、８〜１２個設け
ることが好ましい。穴の加工は、機械加工、放電加工、
超音波加工等で行うことができる。Although the size and shape of the electrode plate are not particularly limited, they are usually disk-shaped and have an outer diameter of 150 to 150 mm.
Those having a thickness of 350 mm and a thickness of 3 to 7 mm are preferred. Although the size and number of the gas blowing holes vary depending on the etching conditions and the like, the hole diameter is preferably 0.3 to 1.0 mm, and the number of holes is 100.
~ 1000 are preferred. It is preferable to provide 8 to 12 electrode plate mounting holes on the outer peripheral portion for mounting electrodes to the plasma processing apparatus. Machining holes, electrical discharge machining,
It can be performed by ultrasonic processing or the like.
【００１０】本発明において、電極板の外周部とはガス
吹出し穴の設けられている中央部の外側の部分をいう
が、通常ガス吹出し穴は中心から一定の範囲内（すなわ
ち一定の円内）に設けられているので、その一定の円の
外側の部分をいう。In the present invention, the outer peripheral portion of the electrode plate means a portion outside the central portion where the gas blowing holes are provided, but the gas blowing holes are usually within a certain range (ie, within a certain circle) from the center. , Means the portion outside the certain circle.
【００１１】本発明において、電極板の外周部に設ける
小穴は、ガス吹出しの用に供さず、ピンを通し、プラズ
マ処理装置側のガス吹出し穴と電極板のガス吹出し穴と
の位置合わせをするために使用されるものであり、穴位
置はプラズマに曝されない位置であれば特に制限はな
く、一般に、プラズマ処理装置において、シールド部材
で覆われてプラズマ放電に寄与しない位置に設けられ
る。また、穴数は、自由度が大きすぎず、手数がかから
ないという観点から、２〜４個程度が望ましい。また、
穴の大きさについては、位置合わせの精度を上げるた
め、電極取付穴より小さいものが望ましく、直径０．５
〜３ｍｍの穴径のものが好ましい。In the present invention, the small hole provided on the outer peripheral portion of the electrode plate is not used for gas blowing, but is passed through a pin to align the gas blowing hole of the plasma processing apparatus with the gas blowing hole of the electrode plate. The hole position is not particularly limited as long as it is not exposed to plasma, and is generally provided in a plasma processing apparatus at a position covered with a shield member and not contributing to plasma discharge. The number of holes is desirably about 2 to 4 from the viewpoint that the degree of freedom is not too large and the number of steps is not required. Also,
The size of the hole is preferably smaller than the electrode mounting hole in order to increase the positioning accuracy, and the diameter is 0.5
Those having a hole diameter of ３3 mm are preferred.
【００１２】本発明の電極板を使用するプラズマ処理装
置においても、当然、位置合わせ用の小穴をあけておく
ことが必要である。In the plasma processing apparatus using the electrode plate of the present invention, it is naturally necessary to form small holes for positioning.
【００１３】図１に、本発明のプラズマ処理装置用電極
板の一例の正面図を示す。図１のプラズマ処理装置用電
極板１は、その中央部（図１において点線で示した円の
範囲内）にガス吹出し穴２が多数設けられ、その外周部
（図１において点線で示した円の範囲外）には位置合わ
せ用小穴３及び電極板取付穴４が形成されている。FIG. 1 is a front view of an example of an electrode plate for a plasma processing apparatus according to the present invention. The electrode plate 1 for a plasma processing apparatus shown in FIG. 1 has a large number of gas blowout holes 2 provided at a central portion thereof (within a circle shown by a dotted line in FIG. 1), and an outer peripheral portion thereof (a circle shown by a dotted line in FIG. 1). (Outside the range), the positioning small hole 3 and the electrode plate mounting hole 4 are formed.
【００１４】図２に、本発明のプラズマ処理装置用電極
板を取り付けたプラズマ処理装置の一例の概略断面図を
示す。図２に示されるように真空容器５内に、電極板１
が固定された上部電極６及び下部電極７（試料載置台）
が間隔を置いて設けられており、下部電極７の上に被処
理材としてシリコンウエハ８が置かれている。金属製の
電極板取付部材９（バックプレート）には予め、位置合
わせ用の穴が形成されている。そして、電極板１は、前
記電極板取付部材９に、位置合わせ用小穴３によって位
置合わせされた状態で固定されている。FIG. 2 is a schematic sectional view showing an example of a plasma processing apparatus to which the electrode plate for a plasma processing apparatus according to the present invention is attached. As shown in FIG.
Upper electrode 6 and lower electrode 7 (sample mounting table) to which is fixed
Are provided at intervals, and a silicon wafer 8 is placed on the lower electrode 7 as a material to be processed. A hole for positioning is formed in the metal electrode plate mounting member 9 (back plate) in advance. The electrode plate 1 is fixed to the electrode plate mounting member 9 in a state where the electrode plate 1 is positioned by the positioning small holes 3.
【００１５】位置合わせの操作により、電極板のガス吹
出し穴２は、装置側のガス吹出し穴１０と正確に位置が
合っている。そして、位置合わせ用小穴３及び電極板取
付用穴４が設けられている電極板１の外周部は、シール
ド部材１１によって覆われ、保護されている。By the positioning operation, the gas outlet 2 of the electrode plate is accurately aligned with the gas outlet 10 of the apparatus. The outer peripheral portion of the electrode plate 1 provided with the positioning small holes 3 and the electrode plate mounting holes 4 is covered and protected by the shield member 11.
【００１６】[0016]
【実施例】以下、本発明を実施例と比較例について説明
するが、本発明はこれに限定されるものではない。EXAMPLES The present invention will be described below with reference to examples and comparative examples, but the present invention is not limited to these examples.
【００１７】実施例 外径φ２０３ｍｍ、厚み３ｍｍのガラス状炭素製基板の
中央部のφ１５０ｍｍの範囲にφ０．５ｍｍのガス吹出
し穴をピッチ６．３ｍｍで２７７個所設け、さらにＰ．
Ｃ．Ｄ．（電極板の中心を中心とした、各電極板取付穴
の中心を通る円の直径）１７０ｍｍの位置にφ４ｍｍの
電極板取付穴を８個所、同じくＰ．Ｃ．Ｄ．１７０ｍｍ
の位置にφ１ｍｍの位置合わせ用の小穴を３個所設け、
本発明のプラズマ処理装置用電極板とした。EXAMPLE In the center of a glassy carbon substrate having an outer diameter of 203 mm and a thickness of 3 mm, 277 gas blowing holes with a pitch of 6.3 mm were provided in a central portion of 150 mm within a range of 150 mm.
C. D. (Diameter of a circle passing through the center of each electrode plate mounting hole centered on the center of the electrode plate) Eight φ4 mm electrode plate mounting holes at a position of 170 mm. C. D. 170mm
, Three small holes for alignment of φ1 mm
The electrode plate for a plasma processing apparatus of the present invention was used.
【００１８】次に、この電極板をそれぞれ同位置に電極
板取付穴、ガス吹出し穴、位置あわせ用の小穴を有する
アルミ製の装置側の電極板取付部材に、取付ねじを締め
付けずに仮どめした後、位置あわせ用の小穴にφ０．８
ｍｍのピンを挿入して、ガス吹出し穴の位置合わせを行
い、その後、取付ねじを締め付けた。Next, this electrode plate is temporarily attached to an aluminum-made electrode plate attachment member having an electrode plate attachment hole, a gas blowing hole, and a small hole for positioning at the same position without tightening the attachment screws.に 0.8 in the small hole for alignment
mm was inserted, the gas outlet holes were aligned, and then the mounting screws were tightened.
【００１９】このとき、電極板と電極板取付部材のガス
吹出し穴のずれは最大０．２ｍｍであった。At this time, the maximum displacement of the gas blowing holes between the electrode plate and the electrode plate mounting member was 0.2 mm.
【００２０】比較例 外径φ２０３ｍｍ、厚み３ｍｍのガラス状炭素製基板の
中央部のφ１５０ｍｍの範囲にφ０．５ｍｍのガス吹出
し穴をピッチ６．３ｍｍで２７７個所設け、さらにＰ．
Ｃ．Ｄ．１７０ｍｍの位置にφ４ｍｍの電極板取付穴を
８個所設け、比較例のプラズマ処理装置用電極板とし
た。COMPARATIVE EXAMPLE A gas blowing hole having a diameter of 0.5 mm was provided at 277 locations at a pitch of 6.3 mm in a central part of a glassy carbon substrate having an outer diameter of 203 mm and a thickness of 3 mm within a range of 150 mm.
C. D. Eight electrode plate mounting holes having a diameter of 4 mm were provided at a position of 170 mm to provide an electrode plate for a plasma processing apparatus of a comparative example.
【００２１】次に、この電極板をそれぞれ同位置に電極
板取付穴、ガス吹出し穴を有するアルミ製の電極板取付
部材にあてて、取付ねじを締め付けた。Next, this electrode plate was applied to an aluminum electrode plate mounting member having an electrode plate mounting hole and a gas blowing hole at the same position, and the mounting screws were tightened.
【００２２】このとき、電極板と電極板取付部材のガス
吹出し穴のずれは最大０．８ｍｍであった。At this time, the maximum displacement of the gas blowing holes between the electrode plate and the electrode plate mounting member was 0.8 mm.
【００２３】[0023]
【発明の効果】本発明のプラズマ処理装置用電極板は、
処理装置への取付に際し、ガス吹出し穴の内面を傷つけ
ることなく、電極板ガス吹出し穴と装置のガス吹出し穴
のずれを小さくすることができる。According to the present invention, there is provided an electrode plate for a plasma processing apparatus.
When attaching to the processing apparatus, the gap between the electrode plate gas blowing hole and the gas blowing hole of the apparatus can be reduced without damaging the inner surface of the gas blowing hole.
【図１】本発明のプラズマ処理装置用電極板の平面図。FIG. 1 is a plan view of an electrode plate for a plasma processing apparatus according to the present invention.
【図２】本発明のプラズマ処理装置の概略断面図。FIG. 2 is a schematic sectional view of a plasma processing apparatus of the present invention.
１ プラズマ処理装置用電極板 ２ ガス吹出し穴 ３ 位置合わせ用小穴 ４ 電極板取付穴 ５ 真空容器 ６ 上部電極 ７ 下部電極 ８ シリコンウエハ ９ 電極板取付部材 １０ 装置側のガス吹出し穴 １１ シールド部材 DESCRIPTION OF SYMBOLS 1 Electrode plate for plasma processing apparatus 2 Gas blowout hole 3 Small hole for positioning 4 Electrode plate mounting hole 5 Vacuum container 6 Upper electrode 7 Lower electrode 8 Silicon wafer 9 Electrode plate mounting member 10 Device side gas blowing hole 11 Shield member
Claims (1)
理装置用電極板において、その外周部に、電極板をプラ
ズマ処理装置に取付ける際に、プラズマ処理装置側のガ
ス吹出し穴と電極板のガス吹出し穴との位置合わせをす
るための小穴を設けたことを特徴とするプラズマ処理装
置用電極板。In an electrode plate for a plasma processing apparatus having a large number of gas blowing holes, when the electrode plate is mounted on the outer peripheral portion of the electrode plate to the plasma processing apparatus, the gas blowing hole on the plasma processing apparatus side and the gas blowing from the electrode plate. An electrode plate for a plasma processing apparatus, comprising a small hole for alignment with the hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10212761A JP2000049144A (en) | 1998-07-28 | 1998-07-28 | Electrode plate in plasma treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10212761A JP2000049144A (en) | 1998-07-28 | 1998-07-28 | Electrode plate in plasma treatment apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000049144A true JP2000049144A (en) | 2000-02-18 |
Family
ID=16627974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10212761A Pending JP2000049144A (en) | 1998-07-28 | 1998-07-28 | Electrode plate in plasma treatment apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000049144A (en) |
Cited By (10)
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|---|---|---|---|---|
| JP2002324781A (en) * | 2001-04-25 | 2002-11-08 | Shin Etsu Chem Co Ltd | Electrode plate for plasma device |
| WO2014097576A1 (en) * | 2012-12-19 | 2014-06-26 | キヤノンアネルバ株式会社 | Grid assembly and ion beam etching apparatus |
| JP2019220691A (en) * | 2018-06-14 | 2019-12-26 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Calibration jig |
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-
1998
- 1998-07-28 JP JP10212761A patent/JP2000049144A/en active Pending
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|---|---|---|---|---|
| JP4540250B2 (en) * | 2001-04-25 | 2010-09-08 | 信越化学工業株式会社 | Electrode plate for plasma device |
| JP2002324781A (en) * | 2001-04-25 | 2002-11-08 | Shin Etsu Chem Co Ltd | Electrode plate for plasma device |
| WO2014097576A1 (en) * | 2012-12-19 | 2014-06-26 | キヤノンアネルバ株式会社 | Grid assembly and ion beam etching apparatus |
| JP5956612B2 (en) * | 2012-12-19 | 2016-07-27 | キヤノンアネルバ株式会社 | Grid assembly and ion beam etching apparatus |
| US11508545B2 (en) | 2012-12-19 | 2022-11-22 | Canon Anelva Corporation | Grid assembly and ion beam etching apparatus |
| US12094752B2 (en) | 2016-01-26 | 2024-09-17 | Applied Materials, Inc. | Wafer edge ring lifting solution |
| US11393710B2 (en) | 2016-01-26 | 2022-07-19 | Applied Materials, Inc. | Wafer edge ring lifting solution |
| US10991556B2 (en) | 2017-02-01 | 2021-04-27 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US11887879B2 (en) | 2017-09-21 | 2024-01-30 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US11201037B2 (en) | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
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