JP2001110876A - Device and method for plasma treatment - Google Patents

Device and method for plasma treatment

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Publication number
JP2001110876A
JP2001110876A JP28956399A JP28956399A JP2001110876A JP 2001110876 A JP2001110876 A JP 2001110876A JP 28956399 A JP28956399 A JP 28956399A JP 28956399 A JP28956399 A JP 28956399A JP 2001110876 A JP2001110876 A JP 2001110876A
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JP
Japan
Prior art keywords
substrate
plasma processing
contact
work
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28956399A
Other languages
Japanese (ja)
Other versions
JP3896735B2 (en
Inventor
Tetsuhiro Iwai
哲博 岩井
Ryuji Nagatome
隆二 永留
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP28956399A priority Critical patent/JP3896735B2/en
Publication of JP2001110876A publication Critical patent/JP2001110876A/en
Application granted granted Critical
Publication of JP3896735B2 publication Critical patent/JP3896735B2/en
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Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a device and method for plasma treatment by which a substrate can be treated with plasma by surely clamping the substrate to an electrode in a state where the risk of abnormal discharge is low. SOLUTION: A plasma treatment device has a clamping mechanism 20 which is attached to the internal surface of a cap member forming a treatment chamber and clamp a substrate to an electrode being in contact with the substrate. The retaining mechanism 20 is provided with a substrate clamping unit 22 equipped with a contacting section 27 being in contact with the edge section of the substrate and substrate clamping pins 24 being in contact with the central part of the substrate in spots and are hung down in the inside of the cap member 10.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【発明の属する技術分野】本発明は、ワークのプラズマ
処理を行うプラズマ処理装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing a plasma process on a workpiece.

【従来の技術】プラズマ処理装置では、密閉空間内の電
極上に基板などのワークを載置して減圧下で放電を発生
させることにより処理を行う。放電には発熱が伴うた
め、真空処理を継続する過程で処理対象物の温度が上昇
する。ワークが平面サイズに対して厚さが相対的に小さ
い薄型の基板などである場合には、ワークは温度上昇に
よってそりを生じ処理過程で基板が電極上面から浮き上
がりやすい。そして浮き上がりによって基板と電極面と
の間に隙間が生じると、この隙間部分で局部放電が発生
し均一な処理が妨げられる。このため、薄型の基板を対
象物とする場合には、電極との間に隙間を生じないよう
に基板を電極に対して押さえつけるための手段を必要と
する。従来の真空処理装置では、真空の処理室内に基板
を電極に対して押さえつけるための押さえ部材を設け、
この押さえ部材を駆動する押さえ機構が設けられてい
た。この押さえ機構は処理室を構成するチャンバの側壁
または底面を貫通するロッドによって処理室内の押さえ
部材と処理室外の駆動部とを連結する必要があった。
2. Description of the Related Art In a plasma processing apparatus, processing is performed by placing a work such as a substrate on an electrode in a closed space and generating a discharge under reduced pressure. Since the discharge is accompanied by heat generation, the temperature of the processing target increases in the process of continuing the vacuum processing. When the work is a thin substrate or the like whose thickness is relatively small with respect to the plane size, the work is warped due to a rise in temperature, and the substrate is easily lifted from the upper surface of the electrode in the process. If a gap is formed between the substrate and the electrode surface due to the lifting, a local discharge is generated in the gap, thereby preventing uniform processing. For this reason, when a thin substrate is used as an object, means for pressing the substrate against the electrode so that no gap is formed between the substrate and the electrode is required. In a conventional vacuum processing apparatus, a pressing member for pressing a substrate against an electrode is provided in a vacuum processing chamber,
A pressing mechanism for driving the pressing member has been provided. This pressing mechanism needs to connect the pressing member inside the processing chamber and the drive unit outside the processing chamber by a rod penetrating the side wall or bottom surface of the chamber constituting the processing chamber.

【発明が解決しようとする課題】しかしながら、従来の
押さえ機構では前述のロッドが処理室を貫通する位置に
隙間を密閉するシール部を必要とするため構造が複雑に
なり、装置の高コスト化を招く要因となっていた。ま
た、従来の押さえ機構では基板の縁部を押さえることは
できるが、基板の中央部を押さえることはきわめて困難
であった。この理由を説明すると、基板の中央部を押さ
える押さえ部材と前述のロッドとを連結する構造物を、
基板の縁部から中央部に向かってオーバーハングさせた
状態で取り付けることになるが、プラズマ放電を行うと
このオーバハングした構造物と電極との間で異常放電が
発生してプラズマ処理が不可能になるからである。しか
し基板の中央部は浮きを生じやすいので異常放電を生じ
にくい基板の押さえ機構が望まれていた。そこで本発明
は、構造が簡単で異常放電を生じにくくしかも基板を確
実に押さえることができるプラズマ処理装置及びプラズ
マ処理方法を提供することを目的とする。
However, the conventional holding mechanism requires a sealing portion for sealing the gap at a position where the rod penetrates through the processing chamber, which complicates the structure and increases the cost of the apparatus. It was an inviting factor. Further, the conventional pressing mechanism can press the edge of the substrate, but it is extremely difficult to press the center of the substrate. To explain the reason, a structure that connects the above-mentioned rod with a holding member that holds down the central portion of the substrate,
The substrate will be mounted in an overhanging direction from the edge to the center of the substrate.However, if plasma discharge is performed, abnormal discharge will occur between this overhanging structure and the electrode, making plasma processing impossible. Because it becomes. However, since the central portion of the substrate is liable to float, a mechanism for holding down the substrate, which is unlikely to cause abnormal discharge, has been desired. Therefore, an object of the present invention is to provide a plasma processing apparatus and a plasma processing method which have a simple structure, are unlikely to cause abnormal discharge, and can reliably hold down a substrate.

【課題を解決するための手段】請求項1記載のプラズマ
処理装置は、ベース部に対して密着して密閉空間である
処理室を形成する蓋部材と、前記処理室内に配置されて
上面に処理対象のワークが載置される電極と、前記蓋部
材の内側に取り付けられ蓋部材が前記ベース部に密着し
た状態で前記電極上のワークに当接して前記電極へ押さ
えつけるワーク押さえとを備え、このワーク押さえは、
蓋部材の内側に吊り下げ状態で装着されて前記ワークの
縁部に当接する第1の当接部材と、蓋部材の内側に吊り
下げ状態で装着され前記ワークの中央部に当接する第2
の当接部材との少なくとも2種類の当接部材を有してい
る。請求項2記載のプラズマ処理装置は、請求項1記載
のプラズマ処理装置であって、前記第1の当接部材は、
ワークに線状または細長の面状に当接する。請求項3記
載のプラズマ処理装置は、請求項1記載のプラズマ処理
装置であって、前記第2の当接部材は、ワークに点状に
当接する。請求項4記載のプラズマ処理方法は、ベース
に装着された電極上にワークを載置してこのベースに蓋
部材を密着させてワークを収容する密閉空間を形成し、
この密閉空間内でプラズマを発生させてワークのプラズ
マ処理を行うプラズマ処理方法であって、前記ベースの
内側にワークに当接する第1及び第2の当接部材を吊り
下げ状態で取り付けておき、前記蓋部材がベースに密着
したときに前記第1の当接部材がワークの縁部を前記電
極に押さえ付けるとともに、前記第2の当接部材がワー
クの中央部を電極に押さえ付け、この状態で密閉空間内
でプラズマを発生させるようにした。請求項5記載のプ
ラズマ処理方法は、請求項4記載のプラズマ処理方法で
あって、前記第1の当接部材は、ワークに線状または細
長の面状に当接する。請求項6記載のプラズマ処理方法
は、請求項4記載のプラズマ処理方法であって、前記第
2の当接部材は、ワークに点状に当接する。本発明によ
れば、蓋部材に吊り下げた状態で設けた押し付け部材に
よりワークの縁部と中央部とを電極に押し付けてプラズ
マ処理を行うので、構造が簡単になるとともに、プラズ
マ処理中の異常放電の発生を抑制することができる。
According to a first aspect of the present invention, there is provided a plasma processing apparatus, comprising: a lid member which is in close contact with a base portion to form a processing chamber which is a closed space; An electrode on which a target work is placed, and a work holder which is attached to the inside of the lid member and abuts against the work on the electrode in a state where the lid member is in close contact with the base portion and presses against the electrode. Work holding,
A first contact member attached to the inside of the lid member in a suspended state and abutting against the edge of the work; and a second contact member attached to the inside of the lid member in a suspended state and abutting on the central portion of the work.
And at least two types of contact members. The plasma processing apparatus according to claim 2 is the plasma processing apparatus according to claim 1, wherein the first contact member is
Contact the work in a linear or elongated surface. According to a third aspect of the present invention, there is provided the plasma processing apparatus according to the first aspect, wherein the second contact member abuts on the workpiece in a point-like manner. In the plasma processing method according to claim 4, a work is placed on an electrode mounted on a base, and a lid member is brought into close contact with the base to form a closed space for accommodating the work.
A plasma processing method for performing plasma processing of a work by generating plasma in the closed space, wherein first and second abutting members abutting on the work are attached to the inside of the base in a suspended state, When the lid member comes into close contact with the base, the first contact member presses the edge of the work against the electrode, and the second contact member presses the center of the work against the electrode. To generate plasma in a closed space. A plasma processing method according to a fifth aspect is the plasma processing method according to the fourth aspect, wherein the first abutting member abuts on the workpiece in a linear or elongated planar shape. A plasma processing method according to a sixth aspect is the plasma processing method according to the fourth aspect, wherein the second contact member abuts on the workpiece in a point-like manner. According to the present invention, since the plasma processing is performed by pressing the edge and the center of the work against the electrode by the pressing member provided in a state of being suspended from the lid member, the structure is simplified and abnormalities during the plasma processing are reduced. Discharge can be suppressed.

【発明の実施の形態】次に本発明の実施の形態を図面を
参照して説明する。図1は本発明の一実施の形態のプラ
ズマ処理装置の斜視図、図2は同プラズマ処理装置の側
面図、図3は同プラズマ処理装置の蓋部材の反転斜視
図、図4は同プラズマ処理装置の蓋部材の部分斜視図、
図5は同プラズマ処理装置の押さえ機構の斜視図、図
6、図8は同プラズマ処理装置の蓋部材の部分断面図、
図7は同プラズマ処理装置の部分断面図、図9、図10
は同プラズマ処理装置の基板押さえの取り付け治具の斜
視図、図11は同プラズマ処理装置の基板押さえの取り
付け治具の平面図、図12、図13、図14は同プラズ
マ処理装置の基板押さえの取り付け治具の装着方法の説
明図である。まず図1、図2を参照してプラズマ処理装
置の構造を説明する。図1、図2において、基台1の上
面に水平に配設されたベース部2の中央部には開口部2
aが設けられており、開口部2a内には下方から電極3
が絶縁部材3a(図2)を介して装着されている。電極
3の上面は処理対象の基板4を載置する載置部となって
いる。ベース部2には開口部2aに近接した位置に排気
孔2bが設けられており、排気孔2bの外側には開口部
2aを囲む形でシール部材5が配設されている(図7も
参照)。図2に示すように、基台1の端部にはフレーム
部材6が立設されており、フレーム部材6の天板6aの
下面には、シリンダ8がロッド8aを下方に向けて垂直
に配設されている。なお、図1ではフレーム部材6およ
び天板6aの図示を省略している。ロッド8aにはブラ
ケット9が結合されており、ブラケット9に設けられた
回転ヒンジ機構9aには、蓋部材10が水平方向の軸廻
りに回転自在に装着されている。シリンダ8のロッド8
aを突没させることにより蓋部材10はベース部材2上
で昇降し、蓋部材4が下降した状態では、蓋部材10の
下端部はベース部材2の上面のシール部材5に当接する
(図7(b)参照)。これにより、電極3、ベース部材
2および蓋部材10で閉囲される空間は密閉され、プラ
ズマ処理を行うための処理室を形成する。本実施の形態
では、シリンダ8が蓋部材10とベース部材2を接離さ
せるための接離機構となっている。接離機構としては、
シリンダ以外の動力源を用いることも可能であり、また
ベース部材2側を昇降させて蓋部材10へ当接する構成
でもよい。蓋部材10がベース部材2の上面に当接した
状態で、排気孔2bを介して真空吸引することにより、
処理室内部が真空排気される。この後、蓋部材10の上
面に接続された管部材11からプラズマ発生用ガスを供
給し、電極3と蓋部材10の間に高周波電源7(図7参
照)によって高周波電圧を印加することにより、処理室
内にはプラズマ放電が発生し電極3上に載置された基板
4のプラズマ処理が行われる。処理対象の基板4が薄い
場合には、プラズマ処理の過程で基板4にそりが生じ電
極3から浮き上がりやすい為、蓋部材10にはプラズマ
処理中に基板4を電極3に対して押し付けるワーク押さ
えとしての基板押さえを複数備えた押さえ機構20が設
けられている。この押さえ機構20は、基板4の種類に
よって押さえ部材の位置調整を必要とする。この調整作
業を容易に行えるよう、蓋部材10は回転ヒンジ機構9
aによって回転自在となっており、図2に示すように蓋
部材10を回転させて垂直姿勢とした状態で、側方から
作業者が蓋部材10の内側にアクセスできるようになっ
ている。次に図3〜図8を参照して蓋部材10に設けら
れた押さえ機構20について説明する。図3、図4は蓋
部材10を反転した状態を示しており、蓋部材10の天
井部材10bの裏面(図3、図4においては上面)には
押さえ機構20が装着されている。押さえ機構20は、
天板21に基板押さえ用の各種部材を取り付けた構成に
なっており、天板21はボルトなどの図示しない固定手
段により蓋部材10の天井部材10bに固定される。押
さえ機構20には、基板4に線状にまたは細長の面状に
当接する当接部材(第1の当接部材)を備え矩形の基板
4の4辺(縁部)を押さえるための4つの基板押さえユ
ニット22(22A〜22C)と、基板4に対して点状
に当接し基板4を局部的に押さえる基板押さえピン24
(第2の当接部材)との2種類の当接部材を備えてい
る。このように、2種類の当接部材を備えることによ
り、基板4の縁部を押さえ込むとともに基板4の内部の
特定位置を選択的に押さえ込むことができ、種類の異な
る基板に対応して多様な基板押さえの形態を容易に実現
することが可能となる。図4、図5に示すように、基板
押さえユニット22には、基板の1辺に対応して天板2
1の固定位置に取り付けられる固定式の基板押さえユニ
ット22A、および他の3辺に対応して天板21に位置
調整自在に取り付けられる移動式の基板押さえユニット
22B,22Cがあり、それぞれボルト23,28によ
って天板21に取り付けられる。図5に示すように、基
板押さえユニット22A,22B,22Cは、それぞれ
プレート状の基部25A,25B,25Cと、これらの
各基部25に設けられ内蔵されたスプリングにより伸縮
自在なシャフトを有する伸縮部26A,26B,26C
と、これらの各伸縮部26のシャフト端部に結合され基
板4に当接する当接部27A,27B,27Cより構成
される。これらの当接部27A,27B,27C(第1
の当接部材)は、蓋部材10の内側に伸縮部26A,2
6B,26C、基部25A,25B,25C及び天板2
1によって吊り下げ状態で装着される。当接部27A,
27B,27Cを伸縮部26A,26B,26Cを介し
て基部25A,25B,25Cに取り付けた状態では、
図5に示すように各当接部27A,27B,27Cの外
側の端面を示すエッジ線EL1の水平方向位置は、基部
25A,25B,25Cの両端の2カ所に形成された切
り欠き部の端面を示すエッジ線EL2の水平方向位置と
一致するようになっている。すなわち、基部25A,2
5B,25Cに設けられた切り欠き部のエッジ線EL2
は、当接部27A,27B,27Cとの位置の対応関係
を示す位置合わせ部となっている。この位置合わせ部を
備えることにより、基板4に当接する当接部27A,2
7B,27Cの位置合わせを行う際に、基部25A,2
5B,25Cに設けられた切り欠き部のエッジ線EL2
を天板21上での位置合わせの基準として用いることが
でき、位置合わせ作業を容易に行うことができる。天板
21には、プラズマ処理時に基板4を電極3に載置した
状態での基板4との相対位置を示すマークや穴が設けら
れている。すなわち、基板4の載置方向や載置中心位置
を示す基準線21dや、処理対象基板のうちの最小サイ
ズ、最大サイズの基板の輪郭をそれぞれ示すマーク線2
1e,21f、および格子状に多数設けられ天板21上
での区画を示すタップ穴21bが設けられている。これ
らのマークや穴を用いることにより、処理対象基板の天
板21上での相対位置を容易にかつ正確に見いだすこと
ができる。基板押さえユニット22B,22Cの位置調
整は、天板21に設けられた長穴21cに沿って基部2
5B,25Cを移動させることにより行われる。図6に
示すように、天井部材10b下面の天板21の長穴21
cに対応する位置には長溝14が設けられており、基部
25B,25Cと天板21とを締結するボルト23が螺
合するナット部材15が、天井部材10bと干渉するこ
となく長溝14内に収容できるようになっている。位置
調整時には、ボルト23を緩めることにより基部25
B,25Cを長穴21cに沿って移動させることがで
き、また基板押さえユニット22B,22Cの固定のた
めにはボルト23を締め付けて基部25B,25Cを天
板21に固定すればよい。基板押さえピン24は、ホル
ダ24aに内蔵されたスプリングによって上下方向に伸
縮自在に装着されており、ホルダ24aを天板21に格
子状に多数設けられたタップ穴21bにボルト23,2
8によって固定することによって取り付けられる。基板
押さえピン24も蓋部材10の内側にホルダ24a、天
板21によって吊り下げ状態で装着されている。天井2
1上でのタップ穴21bの位置を選択することにより、
またホルダ24aに設けられた長穴の調整代を利用する
ことにより、基板押さえピン24の位置は自由に調整可
能となっている。換言すれば、基板押さえピン24も蓋
部材10の内側に位置調整自在に取り付けられている。
また天板21の4隅には、後述する基板押さえの取り付
け治具を装着するためのタップ穴21aが設けられてい
る。図7は、処理対象の基板4に応じて基板押さえユニ
ット22Bおよび基板押さえピン24の位置を調整した
状態の蓋部材10を示している。図7(a)では、この
蓋部材10は電極3の上方に位置あわせされており、こ
の後蓋部材10を下降させることにより、図7(b)に
示すように蓋部材10の下端部がベース部材2に当接す
るとともに、基板押さえユニット22Bの当接部27B
および基板押さえピン24が基板4の上面に当接する。
この状態では、当接部27Bは伸縮部26Bに内蔵され
たスプリングの付勢力によって、また基板押さえピン2
4も同様に基板4を電極3に対して押さえ付けており、
これにより基板4の電極3表面からの浮き上がりが防止
される。このように、蓋部材10の内側に基板を押さえ
るための押さえ機構20を装着することにより、蓋部材
10とベース部材2とを当接させる動作によって基板4
を押さえ機構20によって押さえることができるので、
構造を大幅に簡単にすることができる。図8は図7
(a)に示すA部分の断面を示している。図8において
蓋部材10の天井部材10bの下面には中央部に溝17
が設けられており、溝17は管継手18を介して管部材
11と連通している。天井部材10bの下面に固定され
た基板押さえの取り付けの天板21には、溝17の位置
に対応してガス噴出孔21dが設けられている。管部材
11を介して供給されるプラズマ発生用ガスは、溝17
の内部を経てガス噴出孔21dから蓋部材10の内部に
供給される。溝17の形成範囲とガス噴出孔21dの孔
径・配置パターンを適切に設定することにより、プラズ
マ発生用ガスを処理室内部に載置された基板4の表面に
対して均一に供給することができる。図7(b)に示す
状態で、処理室内部を真空排気して減圧し、プラズマ発
生用ガスを供給して高周波電圧を処理室内に作用させる
と、処理室内にプラズマが発生し、基板4の表面のプラ
ズマ処理が行われる。この際、押さえ機構20は当接部
27B(27A,27C)や基板押さえピン24を蓋部
材10に吊り下げた状態で装着しているので、押さえ機
構20と電極3との間で異常放電を起こす危険性を低く
抑えることができる。次に図9を参照して、基板押さえ
の取り付け治具について説明する。図9に示す取り付け
治具30は、アクリル板などの透明素材で製作された透
明な板状部材であり、基板押さえユニット22や基板押
さえピン24を、蓋部材10の内側に固定された状態の
天板21に取り付ける際の位置調整を容易に行うために
用いられるものである。取り付け治具30は天板21と
同サイズであり、天板21に設けられたタップ穴21b
に対応した位置にツール挿入孔30bが、また長孔21
cに対応した位置にツール挿入長穴30cが設けられて
いる。ツール挿入孔30bやツール挿入長穴30cは、
取り付け治具30が介在した状態でのドライバなどのツ
ールの使用を可能にするために設けられたものである。
取り付け治具30の表面に示す30dは、取り付け治具
30と対象の基板4との位置的な相関を示す基準線30
dであり、30e,30fはそれぞれ最小サイズ、最大
サイズの基板4を示す目印としてのマーク線(基板の輪
郭線)である。これらのマークは、天板21に設けられ
た基板4との相対位置を示すマークと対応しており、す
なわち、基準線30dは基準線21dと、マーク線30
e,30fは、マーク線21e,21fとそれぞれ対応
している。これらの基準線30dやマーク線30e,3
0fは、前述のタップ穴21b、長穴21cに対応して
設けられたツール挿入挿入孔30b、ツール挿入長穴3
0cとともに、基板押さえユニット22や基板押さえピ
ン24を蓋部材10の内側に取り付ける際の取付位置の
目安となる目印手段となっている。取り付け治具30の
4隅には、天板21のタップ穴21aの位置に対応して
取り付け孔30aが設けられており、取り付け治具30
はこれらの取付穴30aと天板21のタップ穴21aを
利用して天板21に装着される。次に図10〜図14を
参照して、この取り付け治具30を用いた基板押さえユ
ニット22や基板押さえピン24の蓋部材10への取り
付け方法について説明する。図10(a)において、4
は処理対象の基板であり、まずこの基板4を被処理面側
を取り付け治具30に当接させて取り付け治具30にセ
ットする。このとき、図10(b)に示すように基板4
を取り付け治具30の所定位置に位置合わせする。この
位置合わせは基板4の一方の端面と中心位置を基準線3
0dに合わせることにより行われる。この位置はプラズ
マ処理時に基板4が電極3上に載置される位置に応じて
選択される。そして基板4が取り付け治具30に正しく
位置合わせされたならば、基板4を接着テープ31にて
取り付け治具30に仮止めする。次に、基板4が仮止め
された取り付け治具30を反転する。図11はこの状態
の取り付け治具30を示しており、取り付け治具30が
透明材質で製作されていることから、取り付け治具30
を透して反対面から基板4を視認することができる。そ
してこの状態で基板4の位置や基板4の押さえ位置を示
すマークをマーカなどにより取り付け治具30に記入す
る。図11は、基板4のエッジおよびコーナ部を示すマ
ーク32a,32bと、基板4を局部的に基板押さえピ
ン24で押さえ込むのに支障のない部位として選択され
た位置を示すマーク33が記入された例を示している。
これにより、処理時に電極3上に載置される状態での基
板4の位置、および基板4の適切な押さえ位置が取り付
け治具30に移し替えられたことになる。図12は、既
に蓋部材10に固定された状態の天板21に、両端部に
ねじ部が設けられたスペーサ治具35を用いて、この取
り付け治具30を装着する方法を示している。通常この
装着作業時には、天板21上での基板押さえの配置は当
該作業の前回の位置調整時に位置合わせされた状態のま
まとなっている。したがって、ここで取り付け治具30
を用いて行われる位置合わせ作業では、前回合わされた
位置を新たな合わせ位置に変更する作業が行われる。ま
ず天板21のタップ穴21aに、スペーサ部材35の一
方端のねじ部を螺入し固定する。そしてこの状態でスペ
ーサ部材35の反対端に取り付け治具30の取付け穴3
0aを合わせ、ナット36をスペーサ部材35の反対端
のねじ部に螺合させて締め付けることにより、取り付け
治具30は天板21に装着される。図13はこのように
して装着が完了した状態を示している。スペーサ部材3
5の長さは、蓋部材10の端部と取付用治具30との間
に作業用のスペースが確保されるような長さに設定され
ているため、この状態で必要な作業が容易に行えるよう
になっている。この状態で行われる基板押さえの位置合
わせ作業について、図14を参照して説明する。まず最
初に、前回作業時に位置調整対象の基板に合わせて固定
された基板押さえユニット22や基板押さえピン24の
位置固定を解除する。この作業は基部25Bやホルダ2
4aを締結するボルト23,28を緩めることにより行
われるが、取り付け治具30には各タップ孔21bやボ
ルト固定用の長穴21cの位置に対応してツール挿入孔
30bやツール挿入長穴30cが設けられているため、
ドライバ37などのツールを容易に用いることが可能と
なっている。この作業を終えたならば、基板押さえユニ
ット22や基板押さえピン24の位置合わせを行う。す
なわち、取り付け治具30には図11に示す位置の移し
替え作業によって予め対象とする基板4に対応したマー
ク32a,32b,33が記入されており、透明な取り
付け治具30を透して視認される天板21上の基板押さ
えユニット22や基板押さえピン25を、目視により位
置確認しながらマーク32a,32b,33に位置合わ
せする。この位置合わせは、基板押さえユニット22を
長穴21cに沿って移動させることにより、またホルダ
24aを締結するタップ穴21bを選択することによ
り、それぞれ行われる。この基板押さえユニット22の
位置合わせに際し、基部25A,25B,25Cに設け
られた切り欠き部のエッジ線EL2は、当接部27A,
27B,27Cとの位置の対応関係を示す位置合わせ部
となっているため、基板4に当接する当接部27A,2
7B,27Cの位置合わせを行う際に、基部25A,2
5B,25Cに設けられた切り欠き部のエッジ線EL2
を位置合わせの基準として用いることができる。天板2
1上での基部25A,25B,25Cの位置は容易に視
認できることから、基板押さえユニット22の天板21
に対する位置合わせ作業を正確且つ容易に行うことがで
きる。位置合わせが正しく行われたならば、基板押さえ
ユニット22の基部25や基板押さえピン24のホルダ
24aをボルト23,28を締め付けることにより固定
する。この作業も固定解除と同様に取り付け治具30に
設けられたツール挿入孔30bやツール挿入長穴30c
を利用して行う。この後、基板押さえユニット22や基
板押さえピン25の固定後の位置が、取り付け治具30
のマーク32a,32b,33と合致していることを確
認する。そして位置合わせが正しく行われていることが
確認されたならば、装着と逆の手段で取り付け治具30
を天板21から取り外して、基板押さえの位置調整作業
を完了する。これらの作業において、作業者は蓋部材1
0を水平軸廻りに回転させて垂直姿勢にし、蓋部材10
の裏側を側面に向けた状態で作業を行うことができ(図
2参照)、作業アクセスを容易に行える。また位置合わ
せ作業時には、透明な取り付け治具30に移し替えられ
た基板の位置や基板押さえ位置を常に確認しながら作業
を行うことができる。このため、従来は複雑な手順で試
行錯誤を繰り返しながら行っていた基板押さえの位置合
わせ作業を正確に、しかも容易に行うことができる。し
たがって、位置合わせ時の試行錯誤による反復作業や、
基板押さえ位置の不良によるプラズマ処理品質不良の発
生を防止することができる。
Embodiments of the present invention will now be described with reference to the drawings. 1 is a perspective view of a plasma processing apparatus according to an embodiment of the present invention, FIG. 2 is a side view of the plasma processing apparatus, FIG. 3 is an inverted perspective view of a lid member of the plasma processing apparatus, and FIG. Partial perspective view of a lid member of the device,
FIG. 5 is a perspective view of a pressing mechanism of the plasma processing apparatus, FIGS. 6 and 8 are partial cross-sectional views of a lid member of the plasma processing apparatus,
FIG. 7 is a partial sectional view of the plasma processing apparatus, and FIGS.
Is a perspective view of a jig for mounting the substrate holder of the plasma processing apparatus, FIG. 11 is a plan view of a jig for mounting the substrate holder of the plasma processing apparatus, and FIGS. 12, 13, and 14 are substrate holders of the plasma processing apparatus. It is explanatory drawing of the mounting method of the mounting jig. First, the structure of the plasma processing apparatus will be described with reference to FIGS. 1 and 2, an opening 2 is provided at the center of a base 2 horizontally disposed on the upper surface of a base 1.
a is provided in the opening 2a from below.
Are mounted via an insulating member 3a (FIG. 2). The upper surface of the electrode 3 is a mounting portion on which the substrate 4 to be processed is mounted. An exhaust hole 2b is provided in the base portion 2 at a position close to the opening 2a, and a sealing member 5 is provided outside the exhaust hole 2b so as to surround the opening 2a. ). As shown in FIG. 2, a frame member 6 is provided upright at an end of the base 1, and a cylinder 8 is disposed on a lower surface of a top plate 6 a of the frame member 6 so that the rod 8 a is disposed vertically downward. Has been established. In FIG. 1, the illustration of the frame member 6 and the top plate 6a is omitted. A bracket 9 is connected to the rod 8a, and a lid member 10 is mounted on a rotating hinge mechanism 9a provided on the bracket 9 so as to be rotatable around a horizontal axis. Rod 8 of cylinder 8
The cover member 10 moves up and down on the base member 2 by protruding and retracting a, and when the cover member 4 is lowered, the lower end of the cover member 10 contacts the seal member 5 on the upper surface of the base member 2 (FIG. 7). (B)). As a result, a space enclosed by the electrode 3, the base member 2, and the lid member 10 is sealed, and a processing chamber for performing plasma processing is formed. In the present embodiment, the cylinder 8 is a contact / separation mechanism for bringing the lid member 10 and the base member 2 into and out of contact with each other. As the contact / separation mechanism,
It is also possible to use a power source other than a cylinder, and it is also possible to adopt a configuration in which the base member 2 side is moved up and down to contact the lid member 10. In a state where the lid member 10 is in contact with the upper surface of the base member 2, by vacuum suction through the exhaust hole 2 b,
The inside of the processing chamber is evacuated. Thereafter, a gas for plasma generation is supplied from a tube member 11 connected to the upper surface of the lid member 10, and a high-frequency voltage is applied between the electrode 3 and the lid member 10 by a high-frequency power source 7 (see FIG. 7). Plasma discharge is generated in the processing chamber, and plasma processing of the substrate 4 placed on the electrode 3 is performed. When the substrate 4 to be processed is thin, the substrate 4 is warped in the process of plasma processing and easily rises from the electrode 3. Therefore, the lid member 10 is used as a work holder for pressing the substrate 4 against the electrode 3 during the plasma processing. A holding mechanism 20 provided with a plurality of substrate holders is provided. The holding mechanism 20 needs to adjust the position of the holding member depending on the type of the substrate 4. To facilitate this adjustment work, the lid member 10 is attached to the rotating hinge mechanism 9.
As shown in FIG. 2, the cover member 10 is rotatable so that an operator can access the inside of the cover member 10 from the side while the cover member 10 is rotated to a vertical position. Next, the pressing mechanism 20 provided on the lid member 10 will be described with reference to FIGS. FIGS. 3 and 4 show a state in which the lid member 10 is inverted, and a pressing mechanism 20 is mounted on the back surface (the upper surface in FIGS. 3 and 4) of the ceiling member 10 b of the lid member 10. The holding mechanism 20
Various members for holding the substrate are attached to the top plate 21, and the top plate 21 is fixed to the ceiling member 10b of the lid member 10 by fixing means (not shown) such as bolts. The pressing mechanism 20 includes four contact members (first contact members) that linearly or elongatedly contact the substrate 4 to hold four sides (edges) of the rectangular substrate 4. A board holding unit 22 (22A to 22C) and board holding pins 24 that abut on the board 4 in a point-like manner and locally hold the board 4
(A second contact member). As described above, by providing two types of contact members, it is possible to press down the edge of the substrate 4 and selectively press down a specific position inside the substrate 4, and to use various types of substrates corresponding to different types of substrates. It is possible to easily realize the pressing mode. As shown in FIGS. 4 and 5, the board holding unit 22 has a top plate 2 corresponding to one side of the board.
1. There are a fixed board holding unit 22A attached to the fixed position 1 and movable board holding units 22B and 22C attached to the top plate 21 so as to be position-adjustable corresponding to the other three sides. 28 attaches to the top plate 21. As shown in FIG. 5, the substrate holding units 22A, 22B, and 22C each have a plate-like base 25A, 25B, and 25C, and a telescopic part having a shaft that is provided on each of these bases 25 and that can be expanded and contracted by a built-in spring. 26A, 26B, 26C
And the contact portions 27A, 27B, and 27C that are connected to the shaft end of each of the expansion and contraction portions 26 and contact the substrate 4. These contact portions 27A, 27B, 27C (first
Contact member) is provided inside the cover member 10 with the elastic portions 26A, 2A.
6B, 26C, bases 25A, 25B, 25C and top plate 2
1 to be mounted in a suspended state. Contact part 27A,
In the state where 27B and 27C are attached to the bases 25A, 25B and 25C via the elastic portions 26A, 26B and 26C,
As shown in FIG. 5, the horizontal position of the edge line EL1 indicating the outer end surface of each of the contact portions 27A, 27B, and 27C is determined by the end surfaces of the cutouts formed at two places at both ends of the base portions 25A, 25B, and 25C. In the horizontal direction of the edge line EL2 indicating the position. That is, the bases 25A, 2
Edge line EL2 of the notch provided in 5B, 25C
Is a positioning unit that indicates the correspondence of the positions with the contact parts 27A, 27B, and 27C. By providing this alignment portion, the contact portions 27A and 2A that come into contact with the substrate 4 are provided.
When performing the alignment of the bases 25A, 2C,
Edge line EL2 of the notch provided in 5B, 25C
Can be used as a reference for positioning on the top plate 21, and the positioning operation can be easily performed. The top plate 21 is provided with a mark or a hole indicating a relative position with respect to the substrate 4 when the substrate 4 is placed on the electrode 3 during the plasma processing. That is, the reference line 21d indicating the mounting direction and the mounting center position of the substrate 4, and the mark lines 2 indicating the outlines of the minimum size and maximum size substrates among the processing target substrates, respectively.
1e, 21f, and a large number of tapped holes 21b provided in a lattice shape and indicating sections on the top plate 21 are provided. By using these marks and holes, the relative position of the substrate to be processed on the top plate 21 can be easily and accurately found. The position of the board holding units 22B and 22C is adjusted along the long hole 21c provided on the top plate 21 by the base 2.
This is performed by moving 5B and 25C. As shown in FIG. 6, a long hole 21 of a top plate 21 on the lower surface of the ceiling member 10b.
The nut member 15 into which the bolt 23 for fastening the bases 25B, 25C and the top plate 21 is screwed into the long groove 14 without interfering with the ceiling member 10b. It can be accommodated. At the time of position adjustment, the base 25 is loosened by loosening the bolt 23.
B and 25C can be moved along the elongated hole 21c, and the bases 25B and 25C may be fixed to the top plate 21 by tightening the bolts 23 to fix the board holding units 22B and 22C. The board holding pins 24 are attached to the top and bottom of the top plate 21 such that bolts 23, 2 are provided in a large number of tap holes 21b provided in a lattice shape by a spring built in the holder 24a.
Attach by fixing with 8. The board holding pin 24 is also mounted inside the lid member 10 in a suspended state by the holder 24 a and the top plate 21. Ceiling 2
By selecting the position of the tapped hole 21b on 1
Further, the position of the substrate holding pin 24 can be freely adjusted by utilizing the adjustment allowance for the elongated hole provided in the holder 24a. In other words, the substrate holding pins 24 are also mounted inside the lid member 10 so as to be adjustable in position.
At four corners of the top plate 21, tap holes 21a for mounting a mounting jig for a substrate press described later are provided. FIG. 7 shows the lid member 10 in a state where the positions of the substrate pressing unit 22B and the substrate pressing pins 24 are adjusted according to the substrate 4 to be processed. In FIG. 7A, the lid member 10 is positioned above the electrode 3, and by lowering the rear lid member 10, the lower end of the lid member 10 is lowered as shown in FIG. 7B. The contact portion 27B of the board holding unit 22B is brought into contact with the base member 2.
In addition, the substrate holding pins 24 come into contact with the upper surface of the substrate 4.
In this state, the contact portion 27B is moved by the biasing force of the spring built in the expansion / contraction portion 26B and the substrate holding pin 2
4 also presses the substrate 4 against the electrode 3,
This prevents the substrate 4 from rising from the surface of the electrode 3. As described above, by attaching the holding mechanism 20 for holding the substrate inside the lid member 10, the operation of bringing the lid member 10 and the base member 2 into contact with each other allows the substrate 4
Can be held down by the holding mechanism 20,
The structure can be greatly simplified. FIG. 8 shows FIG.
3A shows a cross section of a portion A shown in FIG. In FIG. 8, a groove 17 is provided at the center on the lower surface of the ceiling member 10b of the lid member 10.
Are provided, and the groove 17 communicates with the pipe member 11 via a pipe joint 18. A gas ejection hole 21d is provided on the top plate 21 for mounting the substrate holder fixed to the lower surface of the ceiling member 10b, corresponding to the position of the groove 17. The gas for plasma generation supplied through the pipe member 11
Is supplied from the gas ejection hole 21d to the inside of the lid member 10 through the inside of the cover member 10. By appropriately setting the formation range of the groove 17 and the hole diameter and arrangement pattern of the gas ejection holes 21d, the gas for plasma generation can be uniformly supplied to the surface of the substrate 4 placed inside the processing chamber. . In the state shown in FIG. 7B, when the inside of the processing chamber is evacuated and reduced in pressure, and a plasma generating gas is supplied to apply a high-frequency voltage to the inside of the processing chamber, plasma is generated in the processing chamber. Plasma treatment of the surface is performed. At this time, since the pressing mechanism 20 is mounted with the contact portions 27B (27A, 27C) and the substrate pressing pins 24 suspended from the lid member 10, abnormal discharge occurs between the pressing mechanism 20 and the electrode 3. The risk of starting can be kept low. Next, with reference to FIG. 9, a mounting jig for the substrate holder will be described. The mounting jig 30 shown in FIG. 9 is a transparent plate-shaped member made of a transparent material such as an acrylic plate, and the substrate holding unit 22 and the substrate holding pin 24 are fixed to the inside of the lid member 10. It is used to easily adjust the position when attaching to the top plate 21. The mounting jig 30 has the same size as the top plate 21, and has a tapped hole 21 b provided in the top plate 21.
The tool insertion hole 30b is located at a position corresponding to
A tool insertion slot 30c is provided at a position corresponding to c. The tool insertion hole 30b and the tool insertion slot 30c
It is provided to enable use of a tool such as a driver with the mounting jig 30 interposed.
30 d shown on the surface of the mounting jig 30 is a reference line 30 indicating a positional correlation between the mounting jig 30 and the target substrate 4.
d, and 30e and 30f are mark lines (substrate contour lines) as marks indicating the substrate 4 of the minimum size and the maximum size, respectively. These marks correspond to marks indicating a relative position with respect to the substrate 4 provided on the top plate 21, that is, the reference line 30d is a reference line 21d and a mark line 30d.
e and 30f correspond to the mark lines 21e and 21f, respectively. The reference line 30d and the mark lines 30e, 3
0f is a tool insertion hole 30b, a tool insertion long hole 3 provided corresponding to the above-described tap hole 21b and long hole 21c.
Along with Oc, it serves as a mark means serving as a guide for an attachment position when the board holding unit 22 and the board holding pin 24 are attached inside the lid member 10. At four corners of the mounting jig 30, mounting holes 30 a are provided corresponding to the positions of the tapped holes 21 a of the top plate 21.
Is mounted on the top plate 21 using the mounting holes 30a and the tapped holes 21a of the top plate 21. Next, a method of attaching the board holding unit 22 and the board holding pins 24 to the lid member 10 using the attachment jig 30 will be described with reference to FIGS. In FIG. 10A, 4
Is a substrate to be processed. First, the substrate 4 is set on the mounting jig 30 by bringing the surface to be processed into contact with the mounting jig 30. At this time, as shown in FIG.
Is positioned at a predetermined position of the mounting jig 30. This alignment is performed by using one end face of the substrate 4 and the center position as a reference line 3.
It is performed by adjusting to 0d. This position is selected according to the position where the substrate 4 is placed on the electrode 3 during the plasma processing. When the substrate 4 is correctly aligned with the mounting jig 30, the substrate 4 is temporarily fixed to the mounting jig 30 with the adhesive tape 31. Next, the mounting jig 30 to which the substrate 4 is temporarily fixed is inverted. FIG. 11 shows the mounting jig 30 in this state. Since the mounting jig 30 is made of a transparent material, the mounting jig 30
, The substrate 4 can be visually recognized from the opposite surface. Then, in this state, a mark indicating the position of the substrate 4 or the pressing position of the substrate 4 is written on the mounting jig 30 with a marker or the like. In FIG. 11, marks 32a and 32b indicating edges and corners of the substrate 4 and marks 33 indicating positions selected as portions which do not hinder the local pressing of the substrate 4 with the substrate pressing pins 24 are written. An example is shown.
As a result, the position of the substrate 4 placed on the electrode 3 at the time of processing and the appropriate holding position of the substrate 4 have been transferred to the mounting jig 30. FIG. 12 shows a method of attaching the mounting jig 30 to the top plate 21 already fixed to the lid member 10 by using the spacer jig 35 provided with screw portions at both ends. Usually, at the time of this mounting operation, the arrangement of the substrate holder on the top plate 21 remains in the state of being aligned at the time of the previous position adjustment of the operation. Therefore, the mounting jig 30
In the alignment work performed using the, the work of changing the previously adjusted position to a new alignment position is performed. First, a screw portion at one end of the spacer member 35 is screwed into the tapped hole 21a of the top plate 21 and fixed. In this state, the mounting hole 3 of the mounting jig 30 is
The mounting jig 30 is mounted on the top plate 21 by aligning 0a and screwing and tightening the nut 36 to the screw portion at the opposite end of the spacer member 35. FIG. 13 shows a state in which the mounting is completed in this way. Spacer member 3
The length of 5 is set such that a working space is secured between the end of the lid member 10 and the mounting jig 30, so that the necessary work can be easily performed in this state. You can do it. The positioning operation of the substrate pressing performed in this state will be described with reference to FIG. First, the position fixing of the substrate pressing unit 22 and the substrate pressing pins 24 fixed to the substrate to be position-adjusted during the previous operation is released. This work is performed on the base 25B and the holder 2
This is performed by loosening the bolts 23 and 28 for fastening the 4a. The mounting jig 30 has a tool insertion hole 30b and a tool insertion slot 30c corresponding to the positions of the tap holes 21b and the bolt fixing slots 21c. Is provided,
Tools such as the driver 37 can be easily used. When this operation is completed, the positioning of the substrate pressing unit 22 and the substrate pressing pins 24 is performed. That is, the marks 32a, 32b, and 33 corresponding to the target substrate 4 are previously written on the mounting jig 30 by the transfer operation shown in FIG. 11, and are visually recognized through the transparent mounting jig 30. The board holding unit 22 and the board holding pins 25 on the top plate 21 are aligned with the marks 32a, 32b, 33 while visually confirming the positions. This alignment is performed by moving the substrate holding unit 22 along the elongated hole 21c and by selecting the tap hole 21b for fastening the holder 24a. When positioning the substrate holding unit 22, the edge lines EL2 of the notches provided in the bases 25A, 25B, and 25C are brought into contact with the contact portions 27A and 27A.
The contact portions 27 </ b> A and 2 </ b> A contacting the substrate 4 because of the positioning portion indicating the positional relationship between the contact portions 27 </ b> B and 27 </ b> C.
When performing the alignment of the bases 25A, 2C,
Edge line EL2 of the notch provided in 5B, 25C
Can be used as a reference for alignment. Top plate 2
1, the positions of the bases 25A, 25B, 25C can be easily visually recognized.
Can be performed accurately and easily. When the positioning is correctly performed, the base 25 of the substrate pressing unit 22 and the holder 24a of the substrate pressing pins 24 are fixed by tightening the bolts 23 and 28. In this operation, the tool insertion hole 30b and the tool insertion slot 30c provided in the attachment
Perform using. Thereafter, the position after fixing the substrate holding unit 22 and the substrate holding pin 25 is the mounting jig 30.
It is confirmed that they match the marks 32a, 32b, 33. Then, when it is confirmed that the alignment is correctly performed, the mounting jig 30 is reversely mounted.
Is removed from the top plate 21 to complete the work of adjusting the position of the substrate holder. In these operations, the worker operates the lid member 1.
0 is rotated about a horizontal axis to a vertical position,
The work can be performed with the back side facing the side (see FIG. 2), and the work access can be easily performed. In addition, at the time of the alignment work, the work can be performed while always checking the position of the substrate transferred to the transparent mounting jig 30 and the substrate holding position. For this reason, the positioning operation of the substrate holder, which has conventionally been performed by repeating trial and error in a complicated procedure, can be performed accurately and easily. Therefore, repetitive work by trial and error at the time of alignment,
It is possible to prevent the occurrence of plasma processing quality failure due to the failure of the substrate holding position.

【発明の効果】本発明によれば、蓋部材に吊り下げた状
態で設けた押し付け部材によりワークの縁部と中央部と
を電極に押し付けてプラズマ処理を行うので、構造が簡
単になるとともに、プラズマ処理中の異常放電の発生を
抑制することができる。
According to the present invention, the plasma processing is performed by pressing the edge and the center of the work against the electrode by the pressing member provided in a state of being hung on the lid member. It is possible to suppress occurrence of abnormal discharge during the plasma processing.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態のプラズマ処理装置の斜
視図
FIG. 1 is a perspective view of a plasma processing apparatus according to an embodiment of the present invention.

【図2】本発明の一実施の形態のプラズマ処理装置の側
面図
FIG. 2 is a side view of the plasma processing apparatus according to the embodiment of the present invention;

【図3】本発明の一実施の形態のプラズマ処理装置の蓋
部材の反転斜視図
FIG. 3 is an inverted perspective view of a lid member of the plasma processing apparatus according to the embodiment of the present invention;

【図4】本発明の一実施の形態のプラズマ処理装置の蓋
部材の部分斜視図
FIG. 4 is a partial perspective view of a lid member of the plasma processing apparatus according to one embodiment of the present invention.

【図5】本発明の一実施の形態のプラズマ処理装置の押
さえ機構の斜視図
FIG. 5 is a perspective view of a holding mechanism of the plasma processing apparatus according to the embodiment of the present invention;

【図6】本発明の一実施の形態のプラズマ処理装置の蓋
部材の部分断面図
FIG. 6 is a partial cross-sectional view of a lid member of the plasma processing apparatus according to one embodiment of the present invention.

【図7】本発明の一実施の形態のプラズマ処理装置の部
分断面図
FIG. 7 is a partial cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention.

【図8】本発明の一実施の形態のプラズマ処理装置の蓋
部材の部分断面図
FIG. 8 is a partial cross-sectional view of a lid member of the plasma processing apparatus according to one embodiment of the present invention.

【図9】本発明の一実施の形態のプラズマ処理装置の基
板押さえの取り付け治具の斜視図
FIG. 9 is a perspective view of a jig for mounting a substrate holder of the plasma processing apparatus according to the embodiment of the present invention;

【図10】本発明の一実施の形態のプラズマ処理装置の
基板押さえの取り付け治具の斜視図
FIG. 10 is a perspective view of a jig for mounting a substrate holder of the plasma processing apparatus according to one embodiment of the present invention;

【図11】本発明の一実施の形態のプラズマ処理装置の
基板押さえの取り付け治具の平面図
FIG. 11 is a plan view of a jig for mounting a substrate holder of the plasma processing apparatus according to one embodiment of the present invention;

【図12】本発明の一実施の形態のプラズマ処理装置の
基板押さえの取り付け治具の装着方法の説明図
FIG. 12 is an explanatory diagram of a mounting method of a mounting jig for a substrate holder of the plasma processing apparatus according to one embodiment of the present invention;

【図13】本発明の一実施の形態のプラズマ処理装置の
基板押さえの取り付け治具の装着方法の説明図
FIG. 13 is an explanatory diagram of a mounting method of a mounting jig for a substrate holder of the plasma processing apparatus according to one embodiment of the present invention;

【図14】本発明の一実施の形態のプラズマ処理装置の
基板押さえの取り付け治具の装着方法の説明図
FIG. 14 is an explanatory diagram of a mounting method of a mounting jig for a substrate holder of the plasma processing apparatus according to one embodiment of the present invention;

【符号の説明】[Explanation of symbols]

2 ベース部材 3 電極 4 基板 8 シリンダ 10 蓋部材 20 押さえ機構 21 天板 22,22A,22B,22C 基板押さえユニット 24 基板押さえピン 25A,25B,25C 基部 26A,26B,26C 伸縮部 27A,27B,27C 当接部 30d 基準線 30e,30f マーク EL1,EL2 エッジ線 2 Base member 3 Electrode 4 Substrate 8 Cylinder 10 Cover member 20 Pressing mechanism 21 Top plate 22, 22A, 22B, 22C Substrate pressing unit 24 Substrate pressing pin 25A, 25B, 25C Base 26A, 26B, 26C Telescopic portion 27A, 27B, 27C Contact part 30d Reference line 30e, 30f Mark EL1, EL2 Edge line

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】ベース部に対して密着して密閉空間である
処理室を形成する蓋部材と、前記処理室内に配置されて
上面に処理対象のワークが載置される電極と、前記蓋部
材の内側に取り付けられ蓋部材が前記ベース部に密着し
た状態で前記電極上のワークに当接して前記電極へ押さ
えつけるワーク押さえとを備え、このワーク押さえは、
蓋部材の内側に吊り下げ状態で装着されて前記ワークの
縁部に当接する第1の当接部材と、蓋部材の内側に吊り
下げ状態で装着され前記ワークの中央部に当接する第2
の当接部材との少なくとも2種類の当接部材を有してい
ることを特徴とするプラズマ処理装置。
A cover member which is in close contact with a base portion to form a processing chamber which is a closed space; an electrode which is disposed in the processing chamber and on which a workpiece to be processed is mounted on an upper surface; A work holder that is attached to the inside of the base member and abuts against the work on the electrode while the lid member is in close contact with the base portion and presses the work against the electrode.
A first contact member attached to the inside of the lid member in a suspended state and abutting against the edge of the work; and a second contact member attached to the inside of the lid member in a suspended state and abutting on the central portion of the work.
A plasma processing apparatus comprising at least two types of contact members.
【請求項2】前記第1の当接部材は、ワークに線状また
は細長の面状に当接することを特徴とする請求項1記載
のプラズマ処理装置。
2. The plasma processing apparatus according to claim 1, wherein said first contact member comes into contact with the workpiece in a linear or elongated plane.
【請求項3】前記第2の当接部材は、ワークに点状に当
接することを特徴とする請求項1記載のプラズマ処理装
置。
3. The plasma processing apparatus according to claim 1, wherein said second contact member abuts on the workpiece in a point-like manner.
【請求項4】ベースに装着された電極上にワークを載置
してこのベースに蓋部材を密着させてワークを収容する
密閉空間を形成し、この密閉空間内でプラズマを発生さ
せてワークのプラズマ処理を行うプラズマ処理方法であ
って、前記ベースの内側にワークに当接する第1及び第
2の当接部材を吊り下げ状態で取り付けておき、前記蓋
部材がベースに密着したときに前記第1の当接部材がワ
ークの縁部を前記電極に押さえ付けるとともに、前記第
2の当接部材がワークの中央部を電極に押さえ付け、こ
の状態で密閉空間内でプラズマを発生させることを特徴
とするプラズマ処理方法。
4. A work is placed on an electrode mounted on a base, a lid member is brought into close contact with the base to form a closed space for accommodating the work, and plasma is generated in the closed space to generate a work space. A plasma processing method for performing plasma processing, wherein first and second abutting members abutting on a workpiece are attached to the inside of the base in a suspended state, and the first and second abutting members are attached to the base when the lid member is in close contact with the base. The first contact member presses the edge of the work against the electrode, and the second contact member presses the center of the work against the electrode, and in this state, plasma is generated in the closed space. Plasma processing method.
【請求項5】前記第1の当接部材は、ワークに線状また
は細長の面状に当接することを特徴とする請求項4記載
のプラズマ処理方法。
5. The plasma processing method according to claim 4, wherein the first contact member contacts the workpiece in a linear or elongated plane.
【請求項6】前記第2の当接部材は、ワークに点状に当
接することを特徴とする請求項4記載のプラズマ処理方
法。
6. The plasma processing method according to claim 4, wherein said second contact member abuts on the workpiece in a point-like manner.
JP28956399A 1999-10-12 1999-10-12 Plasma processing apparatus and plasma processing method Expired - Fee Related JP3896735B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28956399A JP3896735B2 (en) 1999-10-12 1999-10-12 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28956399A JP3896735B2 (en) 1999-10-12 1999-10-12 Plasma processing apparatus and plasma processing method

Publications (2)

Publication Number Publication Date
JP2001110876A true JP2001110876A (en) 2001-04-20
JP3896735B2 JP3896735B2 (en) 2007-03-22

Family

ID=17744859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28956399A Expired - Fee Related JP3896735B2 (en) 1999-10-12 1999-10-12 Plasma processing apparatus and plasma processing method

Country Status (1)

Country Link
JP (1) JP3896735B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018168201A1 (en) * 2017-03-16 2018-09-20 株式会社Screenホールディングス Substrate processing device
JP2019160468A (en) * 2018-03-08 2019-09-19 パナソニックIpマネジメント株式会社 Plasma processing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018168201A1 (en) * 2017-03-16 2018-09-20 株式会社Screenホールディングス Substrate processing device
JP2018157025A (en) * 2017-03-16 2018-10-04 株式会社Screenホールディングス Substrate processing apparatus
JP2019160468A (en) * 2018-03-08 2019-09-19 パナソニックIpマネジメント株式会社 Plasma processing apparatus
JP7122601B2 (en) 2018-03-08 2022-08-22 パナソニックIpマネジメント株式会社 Plasma processing equipment

Also Published As

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