JP2001110834A - Flip-chip semiconductor device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly reliable flip-chip semiconductor device which can be used by mounting again on a substrate without giving damage to a semiconductor chip when the semiconductor chip mounted on a substrate is removed from the substrate. SOLUTION: A flip-chip semiconductor device, consisting of a semiconductor device 6 and solder balls 12, which are used as electrode parts of this device 6, is provided with connection parts 5 and 10 for connecting the above device 6 and the above balls 12 with each other, and insulative resin layers 9 and 11 between the above device 6 and the above balls 12 in such a way as to cover the above connection parts 5 and 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip-chip type semiconductor device and a method of manufacturing the same, and more particularly, to a flip-chip type semiconductor device which is mounted on a substrate without damaging the semiconductor chip. The present invention again relates to a flip-chip type semiconductor device which can be mounted on a substrate and used, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Protruding bumps made of a metallic material such as solder, Au, or Sn-Ag alloy are formed on external terminals formed in an area array arrangement on a chip peripheral portion or an active region on a semiconductor chip. The formed flip-chip type semiconductor device is mounted on a multilayer wiring board on which electrode pads formed in the same pattern as the bump arrangement pattern of the flip-chip type semiconductor device are formed.

When mounting a flip-chip type semiconductor device on a multilayer wiring board, an IR reflow process using a flux is usually used when solder is used as a bump material. However, after mounting the flip-chip type semiconductor device on the multilayer wiring board, the linear expansion coefficient of the multilayer wiring board is different from the linear expansion coefficient of the flip-chip type semiconductor device. . In order to improve such disadvantages, the following measures have conventionally been taken.

First, in order to make the linear expansion coefficient of the multilayer wiring board close to that of silicon, expensive materials such as ALN, muride, and glass ceramics are used, and the linear expansion coefficient is mismatched. Attempts have been made to minimize packaging to improve packaging reliability. Although this attempt was effective from the viewpoint of improving the mounting reliability, it was generally applied to a high-end supercomputer or a large-sized computer because the material of the multilayer wiring board was an expensive ceramic material. It has been used only on a limited basis.

On the other hand, by disposing an underfill resin between a semiconductor chip and a multilayer wiring board using a relatively inexpensive organic material, the shear stress acting on the bump connection portion is dispersed, and the mounting state is reduced. In order to improve the reliability of the system, a technology is used.

However, when voids are present in the underfill resin, or when the interface between the underfill resin and the semiconductor chip or the adhesive property between the underfill resin and the multilayer wiring board is poor, the interface peeling phenomenon occurs in the moisture absorption reflow process. This causes a problem that the product becomes defective, which hinders the cost reduction of the flip-chip type semiconductor device.

A flip chip type semiconductor chip is
In general, the products themselves are expensive because they are used for high-performance LSIs. Therefore, if a defect is found in a portion other than the semiconductor chip in an inspection process after mounting the flip chip type semiconductor chip on the multilayer wiring board, it is necessary to remove the assembled semiconductor chip.

However, when an underfill resin is interposed between the semiconductor chip and the multilayer wiring board, it is almost impossible to remove the underfill resin. In this case, since the device including the peripheral device including the multilayer wiring board becomes defective, the use of a multilayer wiring substrate using an organic material cannot actually be said to reduce the cost.

On the other hand, when a ceramic-based multilayer wiring board is used, the necessity of an underfill resin is eliminated by optimizing the linear expansion coefficient of the ceramic-based material. Becomes

FIG. 19 is a view for explaining a conventional process.

As shown in FIG. 19A, a solder bump 21 is formed on the bottom surface of a flip-chip type semiconductor chip 20. Then, as shown in FIG. 19B, the semiconductor chip 20 is mounted on a mounting substrate 22 and is melt-connected with the solder bumps 21 positioned on electrode portions (not shown) on the substrate.

On the other hand, in the repair, FIG.
As shown in FIG.
3, the semiconductor chip 20 can be removed by melting the bump joint and pulling up the semiconductor chip 20.

However, as shown in FIG.
The surface of the solder bumps 21 of the semiconductor chip 20 after the removal becomes uneven, and when the semiconductor chip is removed, the solder bumps 21 are heated to a high temperature. Damages the passivation film made of an inorganic material such as a polyimide-based organic material or SiO formed for the purpose of protecting the active region of the semiconductor chip. There was a problem that it could not be used again.

[0014]

SUMMARY OF THE INVENTION An object of the present invention is to improve the above-mentioned drawbacks of the prior art, and in particular, to remove a semiconductor chip mounted on a substrate without damaging the semiconductor chip again. It is an object of the present invention to provide a highly reliable flip-chip type semiconductor device which can be mounted on a substrate and used.

[0015]

SUMMARY OF THE INVENTION The present invention basically employs the following technical configuration to achieve the above object.

That is, a first aspect of the flip-chip type semiconductor device according to the present invention is a flip-chip type semiconductor device comprising a semiconductor device and a solder ball serving as an electrode portion of the semiconductor device. A connection portion for connecting to the solder ball is provided, and an insulating resin layer is disposed between the semiconductor device and the solder ball so as to cover the connection portion. ,
In a second aspect, the insulating resin layer covers the connection part over the entire length of the connection part. In a third aspect, the insulating resin layer is , Covering a part of the connecting portion,
In a fourth aspect, the insulating resin layer is formed by laminating at least two resin layers, and the first resin layer on the semiconductor device side
Characterized in that the Young's modulus of the resin layer is higher than the Young's modulus of the second resin layer on the solder ball side,
In a fifth aspect, the connection portion is formed by joining a first connection portion made of a first metal and a second connection portion made of a second metal. Yes,
In a sixth aspect, a position of a joint surface between the first connection portion and the second connection portion substantially coincides with a position of a joint surface between the first resin layer and the second resin layer. And
A seventh aspect is characterized in that the insulating resin layer covers up to a position of a joint surface between the first connection part and the second connection part. , The resin layer,
It should be composed of any one of epoxy resin, silicone resin, polyimide resin, polyolefin resin, cyanate ester resin, phenol resin, naphthalene resin and fluorene resin. The ninth aspect is characterized in that:
On the surface of the semiconductor device where the electrode portion is not provided, a heat spreader for heat dissipation is attached using an adhesive, and in a tenth aspect, the heat spreader includes: Cu, Al, W, Mo,
Fe, Ni, or a metal material of any of Cr is constituted as a main component, or alumina, ALN, SiC,
BN, mullite and the like, characterized in that it is made of a ceramic material.
Epoxy resin, silicone resin, polyimide resin, polyolefin resin, cyanate ester resin, phenol resin, naphthalene resin, fluorene resin as a main component, Ag, Pd, C
u, Al, Au, Mo, W, diamond, alumina,
It is characterized by containing any of ceramic materials such as ALN, mullite, BN, and SiC.

A first aspect of the method for manufacturing a flip-chip type semiconductor device according to the present invention is a method for manufacturing a flip-chip type semiconductor device comprising a semiconductor device and solder balls serving as electrode portions of the semiconductor device. A first step of forming, on one surface of a metal plate made of a first metal material having excellent solder wetting property, a metal film having a solder wetting property lower than that of the first metal material; A second step of exposing the metal plate by etching into a predetermined shape, a third step of forming a resist film only on the metal film etched into the predetermined shape, and a step of covering with the resist film. Forming a first connection portion made of a first metal on the metal plate and then removing the resist film; and forming an electrode portion of the semiconductor device and the fourth step. Indeed the first connection A sixth step of filling a gap between the semiconductor device and the metal plate with a first insulating resin, and etching the metal plate to form a first connection portion. A seventh step of forming a second connection portion so as to increase the length, an eighth step of removing the metal film having poor solder wetting, and a second step of forming a second connection portion on the first insulating resin. A ninth step of laminating the insulating resin, a tenth step of exposing a tip of a second connecting portion covered with the second insulating resin, and a step of exposing the second connecting portion. And at least a twelfth step of singulating the semiconductor device with a semiconductor device.
A method of manufacturing a flip-chip type semiconductor device comprising a solder ball serving as an electrode part of the semiconductor device, wherein the first plate is provided on one surface of a metal plate made of a first metal material having excellent solder wettability. A first step of forming a metal film having less solder wetting property than a metal material, and a second step of etching the metal film into a predetermined shape to expose the metal plate;
A third step of forming a resist film only on the metal film etched into a predetermined shape, and forming a first connection portion made of a first metal on the metal plate not covered with the resist film. A fourth step of removing the resist film, a fifth step of joining an electrode part of the semiconductor device to the first connection part formed in the fourth step, and A sixth step of filling a gap between the first connection portion and the metal plate with a first insulating resin; and etching the metal plate to increase the length of the first connection portion. A seventh step of forming a part, an eighth step of removing the metal film having poor solder wetting, a ninth step of fixing a solder ball on the second connection part, and a singulation process. And at least a tenth step of Third aspect, the metal plate, C
u, Ni, or Cu, a metal material having excellent solder wettability composed of a metal alloy material containing Ni as a main component. The metal film having poor solder wetting properties is a Cr or Ti film.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A flip-chip type semiconductor device according to the present invention is a flip-chip type semiconductor device comprising a semiconductor device and solder balls serving as electrode portions of the semiconductor device. A connection portion for connecting the ball is provided, and so as to cover the connection portion,
An insulating resin layer is provided between the semiconductor device and the solder ball.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A specific example of a flip-chip type semiconductor device according to the present invention and a method of manufacturing the same will be described below in detail with reference to the drawings.

(First Specific Example) FIGS. 1 to 15 show a first specific example of a flip-chip type semiconductor device according to the present invention and a method of manufacturing the same. A flip-chip type semiconductor device including a device 6 and a solder ball 12 serving as an electrode portion of the semiconductor device 6, wherein connection portions 5 and 10 for connecting the semiconductor device 6 and the solder ball 12 are provided; The connection parts 5, 10
The semiconductor device 6 and the solder balls 12 so as to cover
A flip-chip type semiconductor device, wherein insulating resin layers 9 and 11 are disposed between
The insulating resin layers 9 and 11 are connected to the connection portions 5 and 1, respectively.
0 shows a flip-chip type semiconductor device characterized by covering the connection parts 5 and 10 over the entire length of the resin layer 9, and the insulating resin layer comprises at least two resin layers 9 and 11.
Wherein the Young's modulus of the first resin layer 9 on the semiconductor device 6 side is higher than the Young's modulus of the second resin layer 11 on the solder ball 12 side.

Further, the connection portion includes a first connection portion 5 made of a first metal and a second connection portion 10 made of a second metal.
And a flip-chip type semiconductor device characterized in that the first connection portion 5 is connected to the first connection portion 5.
The position of the joint surface 13 between the second connecting portion 10 and the
The flip chip type semiconductor device is characterized in that the position substantially coincides with the position of the joint surface 14 between the resin layer 9 and the second resin layer 11.

In the figures, the metal film 2 having a poor solder wetting property is shown thick to facilitate understanding.

The resin layers 9 and 11 are made of any one of an epoxy resin, a silicone resin, a polyimide resin, a polyolefin resin, a cyanate ester resin, a phenol resin, a naphthalene resin and a fluorene resin. Is the main component.

Hereinafter, the first example will be described in more detail.

First, as shown in FIG.
A metal plate 1 processed into a predetermined shape made of a metal material having excellent solder wettability is prepared. Next, as shown in FIG. 2, on one surface of the metal plate 1, a metal film 2 such as Cr, Ti or the like having a low solder wetting property is formed by a sputtering method or the like. Next, as shown in FIG. 3, the metal film 2 having poor solder wetting property is subjected to a predetermined patterning process to form a metal plating forming portion 3.

Then, after coating with a photoresist film 4, exposure and development processes are performed to
As shown in FIG. 7, a patterning process of the photoresist 4 is performed so that only the metal plating forming portion 3 is exposed.

Next, by using the metal plate 1 as a power supply layer, a solder containing Sn and Pb as main components, Cu, N
i, a bump electrode portion 5 is formed as shown in FIG. 5 by a method such as solder plating after Cu plating, solder plating after Ni plating, solder plating after Cu plating, and then Ni plating. As shown, the photoresist film 4 is removed.

Next, as shown in FIG. 7, a UBM (Under
Barrier Metal) A semiconductor chip 6 having a pad electrode portion 7 and having a passivation film 8 made of a material such as an organic film such as polyimide or an SiO-based inorganic film for the purpose of protecting the chip active region surface. prepare. The U of the semiconductor chip 6
The BM pad electrode section 7 and the bump electrode section 5 formed on the metal plate 1 are joined by heat treatment such as reflow.
At this time, the metal film 2 with poor solder wetting property, which is disposed in advance around the bump electrode portion 5, functions as a barrier film and prevents a short circuit failure of the pattern of the bump electrode portion 5.

Thereafter, as shown in FIG. 8, the insulating resin 9 is disposed in the gap 15 between the semiconductor chip 6 and the metal plate 1. As a method for disposing the insulating resin 9, a method for disposing using a capillary phenomenon like an underfill resin, or a resin press-fitting technique such as an injection sealing technique or a transfer sealing technique may be used.

Next, as shown in FIG. 9, the metal plate 1 is patterned to form a column electrode section 10 below the bump electrode section 5. Specifically, a photoresist film is arranged on the metal plate 1, exposed and developed, and then subjected to a wet etching process to thereby form the column electrode portion 1.
0 can be formed.

Thereafter, as shown in FIG. 10, the metal film 2 with poor solder wetting property around the bump electrode portion 5 on the insulating resin layer 9 is etched away using the bump electrode portion 5 as a mask.

Subsequently, as shown in FIG. 11, an insulating stress buffer resin layer 11 is provided around the column electrode 10 in order to protect the column electrode section 10 from mechanical and chemical stress. In addition, when the insulating stress buffering resin layer 11 is a liquid resin, the insulating stress buffering resin layer 11 may be disposed around the column electrode portion 10 by a spin coating method, and when the insulating stress buffering resin layer 11 is a solid resin, by a transfer molding method. It is possible.

Next, as shown in FIG. 12, the column electrode portion 10 may be covered with the insulating stress buffering resin layer 11, so that the CMP (Chemical Mechanical) is used.
The tip portion 10a of the column electrode portion 10 is cleaned using an ionic polishing technique or a plasma surface treatment technique, and a solder ball 12 as an external terminal is formed on the column electrode portion 10 (FIG. 13). .

It should be noted that a thin metal film of Au, Ni / Au, etc. may be formed on the column electrode portion 10 by using an electroless plating technique in consideration of the attachment property of the solder ball 12.

Thereafter, as shown in FIG. 14, a dicing blade or a cutting die or the like is used to carry out a singulation process for each semiconductor chip to obtain a flip chip type semiconductor device as shown in FIG.

As described above, the method for manufacturing a flip-chip type semiconductor device according to the present invention is the same as the method for manufacturing a flip-chip type semiconductor device comprising the semiconductor device 6 and the solder balls 12 serving as electrode portions of the semiconductor device. A first step of forming a metal film 2 having a lower solder wetting property on one surface of a metal plate 1 made of a first metal material having an excellent property, A second step of exposing the metal plate 1 by etching to a shape of the above; a third step of forming a resist film 4 only on the metal film 2 etched to a predetermined shape; A first metal plate on the uncovered metal plate 1
Forming a connecting portion 5 and then removing the resist film 4; and connecting the electrode portion 7 of the semiconductor device 6 and the first connecting portion 5 formed in the fourth process. A fifth step of bonding, a sixth step of filling a gap 15 between the semiconductor device 6 and the metal plate 1 with a first insulating resin 9, and etching the metal plate 1 to form the first A seventh step of forming the second connection part 10 so as to increase the length of the connection part, an eighth step of removing the metal film 2 having poor solder wetting properties, and the first insulation step. Ninth step of laminating the second insulating resin 11 on the insulating resin 9 and the tip 1 of the second connecting portion 10 covered with the second insulating resin 11
10a for exposing 0a, and the second
First, the solder ball 12 is fixed on the connecting portion 10a of
Step 1 and the twelfth step of singulating the individual semiconductor device.
And at least the following steps.

(Second Specific Example) FIG. 16 is a diagram showing a second specific example of the flip-chip type semiconductor device according to the present invention.

In general, flip-chip type semiconductor chips are often applied to high-pin-count, high-speed devices. In this case, how to radiate heat generated by the semiconductor chips is an issue. The semiconductor device of this specific example may provide a flip-chip semiconductor device capable of improving the heat radiation characteristics of the flip-chip type semiconductor device of the first specific example. For this reason, a heat spreader 14 made of a metal or a ceramic material having excellent heat conductivity is attached to the back surface of the semiconductor chip 6 by using a heat dissipating adhesive 13. Therefore, the manufacturing method of the flip-chip type semiconductor device of this embodiment is exactly the same process up to FIG. 14 of the first embodiment.

The heat spreader 14 has a C
u, Al, W, Mo, Fe, Ni, Cr or any other metallic material as a main component, or ceramic material such as alumina, ALN, SiC, BN, mullite, etc. Is desirable.

The heat-radiating adhesive 13 may be any one of an epoxy resin, a silicone resin, a polyimide resin, a polyolefin resin, a cyanate ester resin, a phenol resin, a naphthalene resin, and a fluorene resin. Ag, Pd, Cu, A
1, Au, Mo, W, diamond, alumina, AL
It is desirable to use one containing any of ceramic materials such as N, mullite, BN, and SiC.

By employing this structure, heat generated by the semiconductor chip can be mainly radiated from the back surface of the semiconductor chip, and the heat radiation characteristics of the flip-chip type semiconductor device can be improved.

(Third Specific Example) FIG. 17 is a view showing a third specific example of the flip-chip type semiconductor device according to the present invention. In FIG. A flip-chip type semiconductor device which covers a part of the connection parts 5 and 10 is shown.

An object of the third embodiment is to provide a low-cost flip-chip type semiconductor device according to the first embodiment.

In this specific example, the column electrode portion 10
Adopting a structure in which the insulating stress buffer resin layer is not arranged in the periphery, the step of forming the insulating stress buffer resin layer,
In addition, since the step of cleaning the surface of the column electrode portion 10 can be reduced, it is possible to provide a flip-chip type semiconductor device which is lower in cost than the first specific example.

Since the insulating stress buffering resin layer is not provided, the protection effect against the mechanical and chemical stress on the column electrode portion 10 is reduced. It is possible to provide a type semiconductor device.

(Fourth Specific Example) FIG. 18 is a view showing a fourth specific example of the flip-chip type semiconductor device according to the present invention.

An object of this embodiment is to provide a low-cost flip-chip type semiconductor device according to the first embodiment. In the step of forming the bump electrode portion 5 in the first embodiment, a metal plate is formed. 1 is subjected to an etching removal process, and then the metal film 2 having poor solder wetting property around the bump electrode portion 5 on the insulating resin layer 9 is removed by etching. Is formed.

By adopting this structure, since there is no column electrode portion, the stand-off height is lower than in the first to third embodiments, so that the mounting reliability is lowered. Since the step of arranging the insulating stress buffer resin around the electrode portion is completely eliminated, the cost can be significantly reduced, which is suitable for applications in which the level of reliability required by the customer is not high.

[0049]

The flip-chip type semiconductor device according to the present invention has the following effects because it is configured as described above.

That is, the protective film has a double structure in which an insulating resin layer is previously formed on the passivation film of the semiconductor chip, and an insulating stress buffering resin layer is formed on the insulating resin layer. In addition, the passivation film on the semiconductor chip and the active region surface under the passivation film can be protected from heat and mechanical stress generated at the time of removal, and a highly reliable and repairable flip-chip type semiconductor device can be provided.

Further, since the external terminals are formed by combining the bump electrodes, the column electrodes and the solder bumps as the external terminals of the semiconductor chip, a semiconductor device having a high height can be formed as the external terminals. It is. That is, when the flip-chip type semiconductor device of the present invention is mounted on the multilayer wiring board on the end user side, the standoff height between the multilayer wiring board and the semiconductor chip is increased, thereby providing a stress buffering effect. The mounting reliability of the flip-chip type semiconductor device is improved.

[Brief description of the drawings]

FIG. 1 is a diagram showing a manufacturing process of a flip-chip type semiconductor device according to the present invention.

FIG. 2 is a view showing a step that follows the step of FIG. 1;

FIG. 3 is a view showing a step that follows the step shown in FIG. 2;

FIG. 4 is a view showing a step that follows the step shown in FIG. 3;

FIG. 5 is a view showing a step that follows the step shown in FIG. 4;

FIG. 6 is a view showing a step that follows the step of FIG. 5;

FIG. 7 is a view showing a step that follows the step of FIG. 6;

FIG. 8 is a view showing a step that follows the step shown in FIG. 7;

FIG. 9 is a view showing a step that follows the step shown in FIG. 8;

FIG. 10 is a view showing a step that follows the step of FIG. 9;

FIG. 11 is a view showing a step that follows the step shown in FIG. 10;

FIG. 12 is a view showing a step that follows the step of FIG. 11;

FIG. 13 is a view showing a step that follows the step of FIG. 12;

FIG. 14 is a view illustrating a step that follows the step of FIG. 13;

FIG. 15 is a view illustrating a step that follows the step of FIG. 14;

FIG. 16 is a diagram showing a second specific example of the present invention.

FIG. 17 is a diagram showing a third specific example of the present invention.

FIG. 18 is a diagram showing a fourth specific example of the present invention.

FIG. 19 is a diagram showing a conventional technique.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Metal plate 2 Metal film with poor solder wetting property 3 Metal plating forming part 4 Photoresist part 5 Bump electrode part (first connection part) 6 Semiconductor chip 7 UBM pad electrode part 8 Passivation film 9 Insulating resin 10 Column electrode part (Second connection part) 10a Tip part of column electrode part 11 Insulating stress buffer resin layer 12 Solder ball 13 Bonding surface between bump electrode part and column electrode part 14 Bonding between insulating resin and insulating stress buffer resin layer Surface 15 Gap between semiconductor device and metal plate

Claims (15)

[Claims] 1. A flip-chip type semiconductor device comprising: a semiconductor device; and a solder ball serving as an electrode portion of the semiconductor device. A flip-chip type semiconductor device comprising: a connection portion for connecting the semiconductor device to the solder ball; A flip-chip type semiconductor device, wherein an insulating resin layer is disposed between the semiconductor device and the solder ball so as to cover a portion. 2. The flip-chip type semiconductor device according to claim 1, wherein the insulating resin layer covers the connecting portion over the entire length of the connecting portion. 3. The flip-chip type semiconductor device according to claim 1, wherein the insulating resin layer covers a part of the connection part. 4. The semiconductor device according to claim 1, wherein the insulating resin layer is formed by laminating at least two resin layers, and wherein the first resin layer on the semiconductor device side has a Young's modulus equal to the second resin layer on the solder ball side. 4. The flip-chip type semiconductor device according to claim 1, wherein the flip-chip type semiconductor device has a higher Young's modulus than the layer. 5. The connection unit according to claim 1, wherein the first connection unit comprises a first metal.
5. The flip-chip type semiconductor device according to claim 1, wherein the connection part is connected to a second connection part made of a second metal. 6. 6. A position of a joint surface between the first connection portion and the second connection portion substantially coincides with a position of a joint surface between the first resin layer and the second resin layer. The flip-chip type semiconductor device according to claim 5, wherein 7. The flip-chip type semiconductor device according to claim 5, wherein the insulating resin layer covers up to a position of a joint surface between the first connection portion and the second connection portion. 8. The resin layer is mainly composed of any one of an epoxy resin, a silicone resin, a polyimide resin, a polyolefin resin, a cyanate ester resin, a phenol resin, a naphthalene resin, and a fluorene resin. The flip-chip type semiconductor device according to any one of claims 1 to 7, wherein: 9. The semiconductor device according to claim 1, wherein a heat spreader for heat radiation is attached to a surface of the semiconductor device on which the electrode portion is not provided, using an adhesive. Flip chip type semiconductor device. 10. The heat spreader according to claim 1, wherein the heat spreader is Cu, A
l, W, Mo, Fe, Ni, or Cr as a main component, or alumina, A
The flip-chip type semiconductor device according to claim 9, wherein the semiconductor device is made of a ceramic material such as LN, SiC, BN, and mullite. 11. The adhesive mainly comprises any one of an epoxy resin, a silicone resin, a polyimide resin, a polyolefin resin, a cyanate ester resin, a phenol resin, a naphthalene resin, and a fluorene resin. And Ag, Pd, Cu, Al, Au, Mo,
W, diamond, alumina, ALN, mullite, B
11. The flip-chip type semiconductor device according to claim 9, wherein the flip-chip type semiconductor device contains any one of ceramic materials such as N and SiC. 12. A method for manufacturing a flip-chip type semiconductor device comprising a semiconductor device and a solder ball serving as an electrode portion of the semiconductor device, comprising the steps of: forming a metal plate made of a first metal material having excellent solder wettability; A first step of forming a metal film on one surface having a lower solder wetting property than the first metal material; and a second step of etching the metal film into a predetermined shape to expose the metal plate. A third step of forming a resist film only on the metal film etched into a predetermined shape; and forming a first connection portion made of a first metal on the metal plate not covered with the resist film. A fourth step of forming and thereafter removing the resist film; a fifth step of joining the electrode portion of the semiconductor device to the first connection portion formed in the fourth step; Between the semiconductor device and the metal plate A sixth step of filling the gap with a first insulating resin, and forming a second connection section so as to increase the length of the first connection section by etching the metal plate. An eighth step of removing the metal film having poor solder wetting property; a ninth step of laminating a second insulating resin on the first insulating resin; and a second insulating step. A tenth step of exposing the tip of the second connection part covered with the conductive resin, an eleventh step of fixing a solder ball on the exposed second connection part, and a step of singulation. A method for manufacturing a flip-chip type semiconductor device, comprising at least the following steps: 13. A method for manufacturing a flip-chip type semiconductor device comprising a semiconductor device and a solder ball serving as an electrode portion of the semiconductor device, comprising the steps of: forming a metal plate made of a first metal material having excellent solder wettability; A first step of forming a metal film on one surface having a lower solder wetting property than the first metal material; and a second step of etching the metal film into a predetermined shape to expose the metal plate. A third step of forming a resist film only on the metal film etched into a predetermined shape; and forming a first connection portion made of a first metal on the metal plate not covered with the resist film. A fourth step of forming and thereafter removing the resist film; a fifth step of joining the electrode portion of the semiconductor device to the first connection portion formed in the fourth step; Between the semiconductor device and the metal plate A sixth step of filling the gap with a first insulating resin, and forming a second connection section so as to increase the length of the first connection section by etching the metal plate. An eighth step of removing the metal film having poor solder wetting property, a ninth step of fixing a solder ball on the second connection portion, and a tenth step of performing a singulation process. And a method for manufacturing a flip-chip type semiconductor device. 14. The metal plate may be made of Cu, Ni, or C.
14. The method of manufacturing a flip-chip type semiconductor device according to claim 12, wherein the method is made of a metal material having excellent solder wettability made of a metal alloy material containing u and Ni as main components. 15. The metal film having poor solder wetting properties is made of Cr
Or a Ti film.
The method for manufacturing a flip-chip type semiconductor device according to any one of the above.