JP2001110796A - Susceptor system for semiconductor manufacturing facility - Google Patents
Susceptor system for semiconductor manufacturing facilityInfo
- Publication number
- JP2001110796A JP2001110796A JP2000024375A JP2000024375A JP2001110796A JP 2001110796 A JP2001110796 A JP 2001110796A JP 2000024375 A JP2000024375 A JP 2000024375A JP 2000024375 A JP2000024375 A JP 2000024375A JP 2001110796 A JP2001110796 A JP 2001110796A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- vacuum
- ring
- wafer
- supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
- Manipulator (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術の分野】本発明は、半導体製造設備
に係るもので、特にサセプターシステムの構造変更を通
して高温絶縁膜（例えば、ＨＴ−ＵＳＧ（High Tempera
ture-Undoped Silicate Glass）の蒸着時に惹起される
工程不良の発生を防ぎ、サセプターの交換周期短縮に起
因する設備の稼働率低下を防止できる半導体製造設備用
サセプター（susceptor）システムに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing facility, and more particularly to a high-temperature insulating film (for example, HT-USG (High Tempera
The present invention relates to a susceptor system for semiconductor manufacturing equipment that can prevent the occurrence of process failures caused during the deposition of ture-undoped silicate glass) and prevent a reduction in equipment operation rate due to a shortened susceptor replacement cycle.
【０００２】[0002]
【従来の技術】半導体素子の製造の際に広く用いられて
きた低温絶縁膜の代表的な例としては、ＣＶＤ酸化膜及
びＵＳＧ膜の一種のＯ3−ＴＥＯＳなどがある。この中
でＯ3−ＴＥＯＳはＣＶＤ酸化膜と比べギャップフィル
（gap fill）能力に優れるという特長を有して、その使
用範囲が拡大されつつあるが、前記Ｏ3−ＴＥＯＳの場
合に下部膜依存性が強くて膜質蒸着の以前に必ずＮＨ３
プラズマ処理を施さなければならないという工程進行上
の煩雑さがある。このようにＮＨ３プラズマ処理を施す
ことは下部膜の表面親和性を高めて膜質接着特性を向上
させることにより、Ｏ3−ＴＥＯＳの下部膜依存性をな
くすためである。Representative examples of Related Art cryogenic insulating film has been widely used in the production of semiconductor devices, and the like O 3 -TEOS kind of CVD oxide film and USG films. Among them, O 3 -TEOS has a feature that it has an excellent gap fill capability as compared with a CVD oxide film, and its use range is expanding. However, in the case of O 3 -TEOS, the lower film depends on the lower film. NH3 must be used before film deposition.
There is a complication in the process progress that a plasma treatment must be performed. The NH3 plasma treatment is for improving the surface affinity of the lower film and improving the film adhesive property, thereby eliminating the dependency of O 3 -TEOS on the lower film.
【０００３】このような理由に基づき、現在、半導体素
子の高集積化に伴ってＯ3−ＴＥＯＳよりも優柔なギャ
ップフィル能力を有しながら、下部膜依存性を持ってい
ない高温絶縁膜、例えばＨＴ−ＵＳＧを適用して絶縁膜
を形成している。[0003] For these reasons, a high-temperature insulating film, such as a high-temperature insulating film that does not depend on a lower film while having a more flexible gap-filling capability than O 3 -TEOS due to the higher integration of a semiconductor device, for example, has been developed. An insulating film is formed by applying HT-USG.
【０００４】ＨＴ−ＵＳＧ材質の絶縁膜形成工程は、通
常半導体製造設備（例えば、膜質蒸着設備）内のサセプ
ターシステム上に真空吸着方式によりウェハ（半導体基
板）を搭載した後、前記設備内に蒸着ガスを供給して所
望材質の絶縁膜質を形成し、サセプターシステムからウ
ェハを分離する方式により進行されつつある。In the process of forming an insulating film of HT-USG material, a wafer (semiconductor substrate) is usually mounted on a susceptor system in a semiconductor manufacturing facility (for example, a film deposition facility) by a vacuum suction method, and then deposited in the facility. A method of forming an insulating film of a desired material by supplying a gas and separating a wafer from a susceptor system is being developed.
【０００５】図５は、前記膜質蒸着のときに広く使用さ
れてきた従来のサセプターシステム構造を示した平面図
で、図６は、図５のＸ−Ｘ’切断面構造を示す断面図で
ある。図５及び図６に示すように、従来のサセプターシ
ステムは大きく、下段部にはヒーター（図示せず）が置
かれ、その上に円筒状のＳｉＣ材質のサセプター１０が
置かれ、前記サセプター１０内には真空吸着方式により
ウェハ２０をサセプター１０上に留める役割をする真空
供給ライン１８が形成される構造でなっている。FIG. 5 is a plan view showing the structure of a conventional susceptor system widely used for the film deposition, and FIG. 6 is a cross-sectional view showing the structure taken along the line XX 'of FIG. . As shown in FIGS. 5 and 6, the conventional susceptor system is large, and a heater (not shown) is placed on the lower part, and a cylindrical susceptor 10 made of SiC is placed on the heater. Has a structure in which a vacuum supply line 18 serving to hold the wafer 20 on the susceptor 10 by a vacuum suction method is formed.
【０００６】このとき、前記真空供給ライン１８は、中
央部を垂直貫通するように形成された真空ホール１２
と、前記真空ホール１２に対し同心円状に配置されるよ
うに前記真空ホール１２の周辺部に沿って形成された複
数の真空リング（１４：１４ａ，１４ｂ，１４ｃ）及び
前記真空ホール１２を中央点として真空ホール１２と真
空リング１４との空間内でＸ字形状に配置されて、この
間を一体に連結する役割をする連結用溝１６と、からな
る。この場合、前記複数の真空リング１４と前記連結用
溝１６は断面図上で上面が開口した所定厚さの溝形状を
有するように設計され、真空供給ライン１８はウェハ２
０よりも小さいサイズを有するように形成される。At this time, the vacuum supply line 18 is provided with a vacuum hole 12 formed so as to vertically penetrate the central portion.
A plurality of vacuum rings (14: 14a, 14b, 14c) formed along the periphery of the vacuum hole 12 so as to be concentrically arranged with respect to the vacuum hole 12; And a connection groove 16 arranged in an X-shape in the space between the vacuum hole 12 and the vacuum ring 14 and serving to integrally connect the space therebetween. In this case, the plurality of vacuum rings 14 and the connection grooves 16 are designed to have a groove shape of a predetermined thickness with an open upper surface in a sectional view, and the vacuum supply line 18 is
It is formed to have a size smaller than zero.
【０００７】従って、前記サセプターシステムを用いて
下記のような方式によりウェハ２０の脱着が行われる。
即ち、サセプター１０上にウェハを位置整列すると同時
に、真空供給ライン１８を通してエアー（air）を吸入
すると、真空吸着方式によりウェハ２０がサセプター１
０上に付着され、この状態で真空の供給を中断し、前記
真空供給ライン１８内に少量のエアー（例えばＮ2）を
供給すると、ウェハ２０がサセプター１０から離れるよ
うになる。Accordingly, the wafer 20 is detached by using the susceptor system in the following manner.
That is, when the wafer is aligned on the susceptor 10 and air is sucked in through the vacuum supply line 18, the wafer 20 is sucked by the vacuum suction method.
When the supply of vacuum is interrupted and a small amount of air (for example, N 2 ) is supplied into the vacuum supply line 18, the wafer 20 is separated from the susceptor 10.
【０００８】[0008]
【発明が解決しようとする課題】然るに、このような構
造のサセプターシステムを適用してＨＴ−ＵＳＧ材質の
高温絶縁膜を形成する場合、素子の製造の際に次のよう
な問題点が発生する。１番目、ＨＴ−ＵＳＧの場合、膜
質の蒸着のときに既存ノーマル工程よりも高い温度（約
５００℃）が要求されるため、絶縁膜を形成する過程で
既存よりもサセプターの温度が高くなり、このときに加
えられる熱的ストレスに起因してウェハの縁部が上方に
撓む。このようにウェハ２０の縁部が撓む場合、膜質蒸
着のための反応ガスの供給時にサセプター１０とウェハ
２０の縁部の隙間（図６においてＩで示した部分）に反
応ガスが入って反応物（酸化物）が積載されるため、サ
セプター自体が汚染されるだけでなく、ウェハのバック
サイド（back side）側にも膜質蒸着がなされるという
問題が発生する。However, when a HT-USG high-temperature insulating film is formed by applying a susceptor system having such a structure, the following problems occur in the manufacture of a device. . First, in the case of HT-USG, a higher temperature (approximately 500 ° C.) is required for the deposition of the film quality than the existing normal process. At this time, the edge of the wafer bends upward due to the thermal stress applied. When the edge of the wafer 20 bends in this manner, the reaction gas enters the gap between the susceptor 10 and the edge of the wafer 20 (the portion indicated by I in FIG. 6) when the reaction gas for film deposition is supplied. Since an object (oxide) is loaded, not only is the susceptor itself contaminated, but also a problem arises that film deposition is performed on the back side of the wafer.
【０００９】図７は、理解を助けるように上記した不良
が発生した場合における図４のＩ部分を拡大して図示し
た要部詳細図である。図７において矢印はサセプター１
０とウェハ２０の縁部の隙間に入る膜質蒸着用反応ガス
を示す。FIG. 7 is a detailed view of a main part of an enlarged portion I of FIG. 4 in the case where the above-mentioned defect occurs to facilitate understanding. In FIG. 7, the arrow indicates the susceptor 1
A reaction gas for film deposition which enters a gap between 0 and the edge of the wafer 20 is shown.
【００１０】２番目、ウェハ２０の撓みが甚だしくて、
その隙間ができた程度が相当に甚だしい場合は、真空供
給ライン１８の内部まで反応ガスが入っていくため、こ
の吸入ガスに起因して真空供給ライン１８のウェハ吸着
能力（又はchucking能力という）が劣って、膜質蒸着中
にサセプター１０からウェハ２０が落ちるという問題が
発生する。Second, the wafer 20 is severely bent,
If the degree of the gap is considerably large, the reaction gas enters the inside of the vacuum supply line 18, and the wafer suction capacity (or chucking capacity) of the vacuum supply line 18 is reduced due to the suction gas. Inferiorly, there is a problem that the wafer 20 drops from the susceptor 10 during the film deposition.
【００１１】３番目、写真食刻工程の進行時に、ウェハ
のバックサイド側に積載された反応物のため、ウェハの
フラットゾーンアライン（flatzone align）がよくなさ
れなくて、ミスアライン（misalign）に起因する工程不
良が発生される可能性が高くなるという問題点が発生す
る。Third, during the photolithography process, the flat zone align of the wafer is not well performed due to the reactant loaded on the back side of the wafer, resulting in misalignment. There is a problem that the possibility of occurrence of a process defect increases.
【００１２】４番目、上記の問題が発生されるのを最大
に抑制するためには、サセプターの交換周期を既存ノー
マル低温プロセス進行時と比べて短縮しなければならな
いので、半導体設備の稼働率が低下するという問題点が
あった。Fourth, in order to minimize the occurrence of the above-mentioned problems, the replacement cycle of the susceptor must be shortened as compared with the time when the existing normal low-temperature process is in progress. There was a problem that it decreased.
【００１３】本発明の目的は、真空供給ラインをなす真
空リング外郭側のサセプター内にＮ 2供給ラインがさら
に具備されるようにサセプターシステムの構造を変更さ
せることにより、ウェハの撓み発生に起因してサセプタ
ーとウェハエッジとの間に隙間ができても、前記Ｎ2供
給ラインを通して供給されるＮ2ガスを用いて膜質蒸着
用反応ガスが前記隙間に入ってくることを遮断して、Ｈ
Ｔ−ＵＳＧ材質の高温絶縁膜蒸着のときに工程不良が発
生することを防止し、サセプターの交換周期短縮により
設備の稼働率が低下することを防止し得る半導体製造設
備用サセプターシステムを提供するにある。An object of the present invention is to provide a vacuum supply line.
N inside the susceptor on the outer side of the empty ring TwoFurther supply lines
The structure of the susceptor system to be
Susceptor due to wafer bending
Even if there is a gap between theTwoOffering
N supplied through the supply lineTwoFilm deposition using gas
To prevent the reaction gas from entering the gap,
Process failure occurs when depositing high temperature insulating film of T-USG material
And reduce the susceptor replacement cycle
Semiconductor manufacturing facilities that can prevent a decrease in equipment utilization
To provide a stock susceptor system.
【００１４】[0014]
【課題を解決するための手段】前記目的を達成するため
本発明は、ウェハへの熱伝達機能を担当するヒーター
と、前記ヒーター上に配置され、実質的なウェハローデ
ィングがなされるサセプターと、前記サセプター内に形
成され、中央部を垂直貫通する真空ホール、前記真空ホ
ールに対し同心円状に配置されるように前記真空ホール
の周辺部に沿って上面が開口され、所定深さを有するよ
うに形成された複数個の真空リング、及び前記真空ホー
ルを中央点として前記真空ホールと前記真空リング間の
空間内でＸ字形状に配置されてこれらを一体に連結し、
上面が開口され所定深さを有するように形成された連結
用溝でなる真空供給ラインと、前記真空供給ライン外郭
側の前記サセプター内に形成され、前記真空リングに対
し同心円状に配置されるように前記真空リングの周辺部
に沿って上面が開口され所定深さを有するように形成さ
れたＮ2供給リング、及び前記Ｎ2供給リングと一体に連
結されるように前記真空ホールと所定間隔離隔された地
点の前記サセプター内部を垂直貫通して形成されたＮ2
供給ホールでなるＮ2供給ラインと、から構成された半
導体製造設備用サセプターシステムが提供される。According to the present invention, there is provided a heater for performing a function of transferring heat to a wafer, a susceptor disposed on the heater and substantially performing wafer loading, and A vacuum hole formed in the susceptor and vertically penetrating the central portion, an upper surface is opened along a peripheral portion of the vacuum hole so as to be concentrically arranged with respect to the vacuum hole, and formed to have a predetermined depth. A plurality of vacuum rings, and the vacuum hole is arranged in the X-shape in the space between the vacuum hole and the vacuum ring with the vacuum hole as a center point, these are integrally connected,
A vacuum supply line formed of a connecting groove having an upper surface opened and formed to have a predetermined depth, and a vacuum supply line formed in the susceptor on the outer side of the vacuum supply line and arranged concentrically with the vacuum ring. An N 2 supply ring having an upper surface opened along a peripheral portion of the vacuum ring and having a predetermined depth, and a predetermined distance from the vacuum hole so as to be integrally connected to the N 2 supply ring. N 2 formed vertically through the inside of the susceptor at the
A susceptor system for a semiconductor manufacturing facility, comprising a N 2 supply line comprising a supply hole.
【００１５】前記構造を有するようにサセプターシステ
ムを設計すると、高温絶縁膜の蒸着のときに熱的ストレ
スに起因してサセプターとウェハエッジ間に隙間領域が
できて、Ｎ2供給ラインを通して供給されるＮ2ガスを用
いて前記隙間に入ってくる膜質蒸着用反応ガスを外部に
流出させることができるので、工程不良の発生を防止
し、サセプター交換周期がノーマル低温プロセス工程の
進行時と比べ短縮されることを防止できる。When the susceptor system is designed to have the above structure, a gap region is formed between the susceptor and the wafer edge due to thermal stress during the deposition of the high-temperature insulating film, and N is supplied through the N 2 supply line. Since the film-forming reaction gas that enters the gap can be discharged to the outside by using the two gases, the occurrence of process defects is prevented, and the susceptor replacement cycle is shortened compared to when the normal low-temperature process process is in progress. Can be prevented.
【００１６】[0016]
【発明の実施の形態】以下、添付した図面を用いて本発
明の実施の形態について説明する。図１は、本発明に係
る半導体製造設備のサセプターシステム構造を示した平
面図で、図２は、図１のＸ−Ｘ’切断面構造を示した断
面図で、図３は、図１のＹ−Ｙ’断面図構造を示した断
面図である。図１乃至図３によると、本発明で提案した
サセプターシステムは大きく、下段部にはウェハ２０へ
の熱伝達機能を担当するヒーター（図示せず）が置か
れ、その上にはウェハ２０がローディングされる部分が
他の部分と比べ高い位置を占有するように、この部分が
膨らんだ構造を有するＳｉＣ材質のサセプター１０が置
かれ、前記サセプター１０内には真空吸着方式によりウ
ェハ２０をサセプター１０上に留める役割をする真空供
給ライン１８が形成され、前記真空供給ライン１８の外
郭側のサセプター１０内にはＮ2供給ライン２６が形成
されるように構成される。Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a plan view showing a susceptor system structure of a semiconductor manufacturing facility according to the present invention, FIG. 2 is a cross-sectional view showing a XX ′ cross-sectional structure of FIG. 1, and FIG. FIG. 3 is a cross-sectional view showing a structure taken along the line YY ′. According to FIGS. 1 to 3, the susceptor system proposed in the present invention is large, and a heater (not shown) for performing a heat transfer function to the wafer 20 is placed in a lower part, on which the wafer 20 is loaded. A susceptor 10 made of a SiC material having a bulging structure is placed so that the portion to be occupied occupies a higher position than other portions, and the wafer 20 is placed in the susceptor 10 on the susceptor 10 by a vacuum suction method. A vacuum supply line 18 is formed to serve as an N 2 supply line 26 in the susceptor 10 on the outer side of the vacuum supply line 18.
【００１７】このとき、前記真空供給ライン１８は、従
来の場合と同様に、中央部を垂直貫通するように形成さ
れた真空ホール１２と、前記真空ホール１２に対し同心
円状に配置されるように前記真空ホール１２の周辺部に
沿って形成された複数の真空リング１４ａ，１４ｂ，１
４ｃ及び前記真空ホール１２を中心点として真空ホール
１２と真空リング１４間の空間内でＸ字状に配置されて
これらを一体に連結する役割をする連結用溝１６とから
構成される。この場合においても前記複数の真空リング
１４と前記連結用溝１６は、断面図上で上面が開口した
所定深さの溝形状を有するように設計される。At this time, as in the conventional case, the vacuum supply line 18 is formed so that the vacuum hole 12 is formed so as to vertically penetrate the central portion, and the vacuum supply line 18 is arranged concentrically with the vacuum hole 12. A plurality of vacuum rings 14a, 14b, 1 formed along the periphery of the vacuum hole 12
4c and a connecting groove 16 which is arranged in an X-shape in the space between the vacuum hole 12 and the vacuum ring 14 with the vacuum hole 12 as a center point and serves to integrally connect them. Also in this case, the plurality of vacuum rings 14 and the connecting grooves 16 are designed to have a groove shape having a predetermined depth with an open upper surface in a cross-sectional view.
【００１８】前記Ｎ2供給ライン２６は、真空リング１
４に対し同心円状に配置されるように前記真空リング１
４の周辺部に沿って形成されたＮ2供給リング２２と、
前記Ｎ2供給リング２２と一体に連結されるように前記
真空ホール１２と所定間隔だけ離隔された地点の前記サ
セプター１０内部を垂直貫通して形成されたＮ2供給ホ
ール２４とから構成される。このとき、前記Ｎ2供給リ
ング２２は、断面図上で上面が開口した所定深さの溝形
状を有するように設計され、真空リング１４よりも大き
く、ウェハ２０よりは小さいサイズを有するように形成
される。The N 2 supply line 26 is connected to the vacuum ring 1
The vacuum ring 1 is arranged so as to be concentric with the vacuum ring 1.
4, an N 2 supply ring 22 formed along the periphery of
The vacuum hole 12 is integrally connected to the N 2 supply ring 22 and includes an N 2 supply hole 24 vertically penetrating through the inside of the susceptor 10 at a predetermined distance. At this time, the N 2 supply ring 22 is designed to have a groove shape having a predetermined depth with an open upper surface in a cross-sectional view, and is formed to have a size larger than the vacuum ring 14 and smaller than the wafer 20. Is done.
【００１９】従って、前記構造のサセプターシステム
は、真空吸着方式によりサセプター１０上にウェハ２０
が真空吸着されるやいなや、Ｎ2供給ライン２６を通し
てＮ2ガス供給が行われ、この状態で膜質蒸着のための
反応ガスが供給される方式によりシステム駆動が行われ
る。図７のサセプターシステムを適用してＨＴ−ＵＳＧ
材質の高温絶縁膜を蒸着すると、熱的ストレスに起因し
てウェハ２０の縁部が上方に撓む現象が発生してサセプ
ター１０とウェハ２０エッジ間に隙間ができても、Ｎ2
供給ライン２６を通して供給されるＮ2ガスが前記隙間
に入る反応ガスをサセプターの外側に流出させるので、
膜質蒸着用反応ガスがサセプター１０とウェハ２０エッ
ジ間の隙間に浸透することを防止できる。Therefore, the susceptor system having the above-described structure is capable of mounting the wafer 20 on the susceptor 10 by a vacuum suction method.
As soon as is vacuum-adsorbed, N 2 gas is supplied through the N 2 supply line 26, and in this state, the system is driven by a method in which a reaction gas for film deposition is supplied. HT-USG by applying the susceptor system of FIG.
When depositing a high-temperature insulating film material, even when a gap between the susceptor 10 and wafer 20 edge phenomena edge is bent over the wafer 20 due to thermal stress is generated, N 2
Since the N 2 gas supplied through the supply line 26 causes the reaction gas entering the gap to flow out of the susceptor,
The reaction gas for film deposition can be prevented from penetrating into the gap between the susceptor 10 and the edge of the wafer 20.
【００２０】その結果、サセプター１０上の特定部分に
反応物が積載して惹起されたサセプター自体の汚染及び
ウェハ２０のバックサイド側に蒸着された膜質に起因し
て惹起されたフォト工程進行時のミスアラインの発生、
そして真空供給ライン１８内への反応ガス侵入によるウ
ェハドロップのような問題が発生しない。さらに、サセ
プターの交換周期が既存ノーマル低温プロセス工程の進
行時と比べ短縮されることを防止して、半導体設備の稼
働率向上を図り得る。As a result, the contamination of the susceptor itself caused by the loading of the reactant on a specific portion on the susceptor 10 and the quality of the film deposited on the back side of the wafer 20 during the photo process are caused. The occurrence of misalignment,
Then, a problem such as a wafer drop due to the intrusion of the reaction gas into the vacuum supply line 18 does not occur. Further, it is possible to prevent the replacement cycle of the susceptor from being shortened as compared with the progress of the existing normal low-temperature process, thereby improving the operation rate of the semiconductor equipment.
【００２１】図４は、理解を助けるために図２のＩ部分
においてサセプター１０とウェハ２０との縁部に隙間が
できた場合、膜質蒸着用反応ガスの流れを示した要部詳
細図である。図４において矢印は前記隙間に入った膜
質蒸着用反応ガスを示し、矢印はＮ2供給ライン２６
を通して供給されるＮ2ガスを示す。図３によると、サ
セプター１０とウェハ２０の端部の隙間領域に流入した
反応ガスがＮ2ガスの圧力に押されて前記隙間に入
る代わりに、外部のサセプター１０の外側に流出される
ことを確認できる。FIG. 4 is a detailed view of a main part showing a flow of a reactant gas for film deposition when a gap is formed between the susceptor 10 and the wafer 20 in the portion I of FIG. . In FIG. 4, arrows indicate reaction gases for film deposition that have entered the gaps, and arrows indicate N 2 supply lines 26.
2 shows the N 2 gas supplied through. According to FIG. 3, the reaction gas flowing into the gap region between the susceptor 10 and the end of the wafer 20 flows out of the external susceptor 10 instead of being pushed by the pressure of N 2 gas and entering the gap. You can check.
【００２２】[0022]
【発明の効果】以上説明したように本発明によると、サ
セプターシステムの設計のときに真空供給ラインをなす
真空リングの外郭側にウェハよりも小さいサイズのＮ2
供給ラインが備えられるようにその構造を変更すること
により、１．熱的ストレスに起因してサセプターとウェ
ハの端部の隙間ができても、前記Ｎ2供給ラインを通し
て供給されるＮ2ガスを用いて膜質蒸着用反応ガスが前
記隙間に入ることを防止して、高温絶縁膜の蒸着のとき
に工程不良が誘発されることを事前に遮断できるし、
２．サセプターの交換周期短縮による設備の稼働率低下
を防止できるという効果がある。As described above, according to the present invention, when designing a susceptor system, N 2 of a smaller size than the wafer is placed on the outer side of the vacuum ring forming the vacuum supply line.
By modifying the structure so that the supply line is provided: Even if a gap is formed between the susceptor and the end of the wafer due to thermal stress, the N 2 gas supplied through the N 2 supply line is used to prevent the reaction gas for film deposition from entering the gap. In addition, it is possible to prevent a process defect from being induced when depositing a high-temperature insulating film in advance,
2. There is an effect that it is possible to prevent a decrease in the operation rate of the equipment due to a shortened susceptor replacement cycle.
【図１】 本発明に係るサセプターシステム構造を示し
た平面図である。FIG. 1 is a plan view showing a susceptor system structure according to the present invention.
【図２】 図１のＸ−Ｘ’切断面構造を示した断面図で
ある。FIG. 2 is a cross-sectional view showing a cross-sectional structure taken along line XX ′ of FIG.
【図３】 図７のＹ−Ｙ’切断面構造を示した断面図で
ある。FIG. 3 is a cross-sectional view showing the structure of a section taken along the line YY ′ of FIG. 7;
【図４】 図１のサセプターシステムを適用した高温絶
縁膜蒸着のときに図２のＩ部分において反応ガス流れを
示した要部詳細図である。FIG. 4 is a detailed view of a main part showing a reaction gas flow in a portion I of FIG. 2 when a high-temperature insulating film is deposited using the susceptor system of FIG. 1;
【図５】 従来のサセプターシステム構造を示した平面
図である。FIG. 5 is a plan view showing a conventional susceptor system structure.
【図６】 図５のＸ−Ｘ’切断面構造を示した断面図で
ある。FIG. 6 is a cross-sectional view showing a cross-sectional structure taken along line XX ′ of FIG. 5;
【図７】 図５のサセプターシステムを適用した高温絶
縁膜の蒸着のときに図６のＩ部分において反応ガス流れ
を示した要部詳細図である。FIG. 7 is a detailed view of a main part showing a reaction gas flow in a portion I of FIG. 6 during deposition of a high-temperature insulating film to which the susceptor system of FIG. 5 is applied.
１０ サセプター １２ 真空ホール １４ 真空リング １６ 連結用溝 １８ 真空供給ライン ２０ ウェハ ２２ 供給リング ２４ Ｎ2供給ホール ２６ Ｎ2供給ラインDESCRIPTION OF SYMBOLS 10 Susceptor 12 Vacuum hole 14 Vacuum ring 16 Connection groove 18 Vacuum supply line 20 Wafer 22 Supply ring 24 N 2 supply hole 26 N 2 supply line
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3C007 DS01 FS01 FT12 NS17 3F061 AA01 CA01 CB06 DB06 4M104 DD44 HH20 5F031 CA02 DA13 HA13 HA14 HA25 HA37 MA28 NA04 5F045 AA03 AB32 AC09 AC11 AD09 BB11 BB14 EK07 EK10 EM04 HA06 ──────────────────────────────────────────────────続 き Continued on front page F term (reference) 3C007 DS01 FS01 FT12 NS17 3F061 AA01 CA01 CB06 DB06 4M104 DD44 HH20 5F031 CA02 DA13 HA13 HA14 HA25 HA37 MA28 NA04 5F045 AA03 AB32 AC09 AC11 AD09 BB11 BB14 EK07 EK10 EM04
Claims (4)
ーと、 前記ヒーター上に配置され、実質的なウェハローディン
グがなされるサセプターと、 前記サセプター内に形成され、中央部を垂直貫通する真
空ホール、前記真空ホールに対し同心円状に配置される
ように前記真空ホールの周辺部に沿って上面が開口さ
れ、所定深さを有するように形成された複数個の真空リ
ング、及び前記真空ホールを中央点として前記真空ホー
ルと前記真空リング間の空間内でＸ字形状に配置されて
これらを一体に連結し、上面が開口され所定深さを有す
るように形成された連結用溝でなる真空供給ラインと、 前記真空供給ライン外郭側の前記サセプター内に形成さ
れ、前記真空リングに対し同心円状に配置されるように
前記真空リングの周辺部に沿って上面が開口され所定深
さを有するように形成されたＮ2供給リング、及び前記
Ｎ2供給リングと一体に連結されるように前記真空ホー
ルと所定間隔離隔された地点の前記サセプター内部を垂
直貫通して形成されたＮ2供給ホールでなるＮ2供給ライ
ンと、を備えることを特徴とする半導体製造設備用サセ
プターシステム。A heater for performing a heat transfer function to a wafer; a susceptor disposed on the heater to perform substantial wafer loading; and a vacuum hole formed in the susceptor and vertically penetrating a central portion. An upper surface is opened along a peripheral portion of the vacuum hole so as to be concentrically arranged with respect to the vacuum hole, and a plurality of vacuum rings formed so as to have a predetermined depth, and As a point, a vacuum supply line which is arranged in an X-shape in the space between the vacuum hole and the vacuum ring, connects them integrally, and has a connection groove formed to have an upper surface opened and to have a predetermined depth. An upper surface is formed along the periphery of the vacuum ring so as to be formed in the susceptor on the outer side of the vacuum supply line and arranged concentrically with the vacuum ring. An N 2 supply ring that is formed to have a predetermined depth, and vertically penetrates through the inside of the susceptor at a predetermined distance from the vacuum hole so as to be integrally connected to the N 2 supply ring. A susceptor system for a semiconductor manufacturing facility, comprising: an N 2 supply line formed by an N 2 supply hole formed.
なされる部分が他の部分よりも高い位置を占有するよう
に上方に膨らんだ構造を有することを特徴とする請求項
１に記載の半導体製造設備用サセプターシステム。2. The susceptor for a semiconductor manufacturing facility according to claim 1, wherein the susceptor has a structure in which a portion on which a wafer is loaded swells upward so as to occupy a higher position than other portions. system.
を特徴とする請求項１に記載の半導体製造設備のサセプ
ターシステム。3. The susceptor system according to claim 1, wherein the susceptor is made of a SiC material.
いサイズを有するように設計されることを特徴とする請
求項１に記載の半導体製造設備のサセプターシステム。4. The susceptor system of claim 1, wherein the N 2 supply ring is designed to have a smaller size than a wafer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990042797A KR20010035982A (en) | 1999-10-05 | 1999-10-05 | susceptor system of semiconductor equipment |
| KR199942797 | 1999-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001110796A true JP2001110796A (en) | 2001-04-20 |
Family
ID=19613999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000024375A Pending JP2001110796A (en) | 1999-10-05 | 2000-02-01 | Susceptor system for semiconductor manufacturing facility |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2001110796A (en) |
| KR (1) | KR20010035982A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008010500A (en) * | 2006-06-27 | 2008-01-17 | Mitsumi Electric Co Ltd | Manufacturing method of semiconductor device |
| CN104064458A (en) * | 2014-07-08 | 2014-09-24 | 上海先进半导体制造股份有限公司 | PECVD film deposition equipment and heating plate thereof |
| CN110238000A (en) * | 2019-06-28 | 2019-09-17 | 北京理工大学 | Sol evenning machine sucker |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100871755B1 (en) * | 2007-04-09 | 2008-12-05 | 동부일렉트로닉스 주식회사 | Heater block of the chemical vapour deposition apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075256A (en) * | 1989-08-25 | 1991-12-24 | Applied Materials, Inc. | Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
| US5230741A (en) * | 1990-07-16 | 1993-07-27 | Novellus Systems, Inc. | Gas-based backside protection during substrate processing |
| KR100232217B1 (en) * | 1997-04-29 | 1999-12-01 | 김영환 | Device and method of deposition insulating film |
-
1999
- 1999-10-05 KR KR1019990042797A patent/KR20010035982A/en not_active Application Discontinuation
-
2000
- 2000-02-01 JP JP2000024375A patent/JP2001110796A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008010500A (en) * | 2006-06-27 | 2008-01-17 | Mitsumi Electric Co Ltd | Manufacturing method of semiconductor device |
| CN104064458A (en) * | 2014-07-08 | 2014-09-24 | 上海先进半导体制造股份有限公司 | PECVD film deposition equipment and heating plate thereof |
| CN110238000A (en) * | 2019-06-28 | 2019-09-17 | 北京理工大学 | Sol evenning machine sucker |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010035982A (en) | 2001-05-07 |
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