CN104064458A - PECVD film deposition equipment and heating plate thereof - Google Patents
PECVD film deposition equipment and heating plate thereof Download PDFInfo
- Publication number
- CN104064458A CN104064458A CN201410323417.1A CN201410323417A CN104064458A CN 104064458 A CN104064458 A CN 104064458A CN 201410323417 A CN201410323417 A CN 201410323417A CN 104064458 A CN104064458 A CN 104064458A
- Authority
- CN
- China
- Prior art keywords
- heat dish
- film deposition
- deposition equipment
- pecvd film
- gas trace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Abstract
The invention provides PECVD film deposition equipment and a heating plate thereof. The heating plate is located in a process cavity of the equipment. Eight process positions are uniformly distributed on the heating plate. A wafer at each process position is passed to the next adjacent process position through rotation of an aluminum fork. A plurality of venting marks penetrating through a process area are distributed on each process position of the heating plate. According to the equipment and the heating plate, after the wafers are placed on the surface of the heating plate of the equipment, gas can be uniformly exhausted towards the periphery through the venting marks, and therefore slipping of the wafer due to the air cushion effect can be avoided.
Description
Technical field
The present invention relates to semiconductor manufacturing facility technical field, specifically, the present invention relates to a kind of PECVD film deposition equipment and heat dish thereof.
Background technology
In film deposition art, if having grown in wafer (wafer) back side has certain film (as TEOS etc.), owing to removing the gas adsorbing on film completely in its follow-up annealing process, or place under normal temperature environment, film is adsorbed gas again, cause wafer to concentrate a large amount of venting putting on the cavity heat dish that vacuum 400 spends, form cushioning effect.This can cause wafer to be subjected to displacement (slide plate) in hot panel surface, in serious situation, can cause waste product and fragment, has affected the online qualification rate of handicraft product.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of PECVD film deposition equipment and heat dish thereof, can exit equably to surrounding after making wafer be positioned over the hot panel surface of equipment, avoids the wafer slide plate causing due to cushioning effect.
For solving the problems of the technologies described above, the invention provides a kind of heat dish of PECVD film deposition equipment, be positioned at process cavity, on described heat dish, be distributed with equably eight technique positions, the locational wafer of each described technique is pitched rotation by aluminium and is delivered on next adjacent with it technique position; Wherein, on the each described technique position of described heat dish, be distributed with the thin gas trace that multiple tracks runs through process area.
Alternatively, on each described technique position, be evenly distributed with and dredge gas trace described in longitudinal four roads, horizontal seven roads.
Alternatively, the width of dredging gas trace described in per pass is 1mm, and the degree of depth is 1mm.
Alternatively, the material of described heat dish is aluminium, and described thin gas trace is delineated out by tungsten carbide tipped tool.
Alternatively, the surface of described heat dish is polished to without projection.
For solving the problems of the technologies described above, the present invention also provides a kind of PECVD film deposition equipment, comprise a heat dish that is positioned at process cavity, on described heat dish, be distributed with equably eight technique positions, the locational wafer of each described technique is pitched rotation by aluminium and is delivered on next adjacent with it technique position; Wherein, on the each described technique position of described heat dish, be distributed with the thin gas trace that multiple tracks runs through process area.
Alternatively, on each described technique position, be evenly distributed with and dredge gas trace described in longitudinal four roads, horizontal seven roads.
Alternatively, the width of dredging gas trace described in per pass is 1mm, and the degree of depth is 1mm.
Alternatively, the material of described heat dish is aluminium, and described thin gas trace is delineated out by tungsten carbide tipped tool.
Alternatively, the surface of described heat dish is polished to without projection.
Compared with prior art, the present invention has the following advantages:
The present invention is by depicting several thin gas trace in length and breadth on the technique position in hot panel surface, wafer is positioned over after hot panel surface is heated can exit equably to surrounding, destroy the generation condition of cushioning effect, thereby avoided the wafer slide plate causing due to cushioning effect.
The present invention is through investigating for a long time, and the heat dish after improvement does not have similar slide plate phenomenon again.Through the repeatedly observation of large maintenance period, the heat dish after improvement all without impact, has been obtained good result on technological parameter, useful life.Implementation procedure of the present invention is simple, easily implement, with low cost, do not increase process costs and take device resource.
Brief description of the drawings
The above and other features of the present invention, character and advantage are by by becoming more obvious below in conjunction with the description of drawings and Examples, wherein:
Fig. 1 is the integral planar structural representation of the heat dish of the PECVD film deposition equipment of one embodiment of the invention;
Fig. 2 is that the heat of PECVD film deposition equipment embodiment illustrated in fig. 1 is coiled the structure for amplifying schematic diagram of a technique position.
Embodiment
Below in conjunction with specific embodiments and the drawings, the invention will be further described; set forth in the following description more details so that fully understand the present invention; but the present invention obviously can implement with the multiple alternate manner that is different from this description; those skilled in the art can do similar popularization, deduction according to practical situations without prejudice to intension of the present invention in the situation that, therefore should be with content constraints protection scope of the present invention of this specific embodiment.
Fig. 1 is the integral planar structural representation of the heat dish of the PECVD film deposition equipment of one embodiment of the invention.It should be noted that this and follow-up other accompanying drawing are all only as example, it is not to draw according to the condition of equal proportion, and should not be construed as limiting as the protection range to actual requirement of the present invention using this.As shown in Figure 1, this heat dish 100 goes for U.S.'s promise sends out the C-1 type deposition apparatus of system (Novellus Systems) company, is positioned at process cavity (not shown).On this heat dish 100, be distributed with equably eight technique positions 101, the wafer (not shown) on each technique position 101 is pitched 102 rotations by aluminium and is delivered on next adjacent with it technique position 101.Wherein, on each technique position 101 of heat dish 100, be distributed with the thin gas trace 103 that multiple tracks runs through process area.
Fig. 2 is that the heat of PECVD film deposition equipment embodiment illustrated in fig. 1 is coiled the structure for amplifying schematic diagram of a technique position.Come together to understand incorporated by reference to Fig. 1 and Fig. 2, on each technique position 101 of heat dish 100, be evenly distributed with longitudinal four roads, the thin gas trace 103 in horizontal seven roads (" vertical four horizontal strokes seven "), after making wafer be positioned over the surface of heat dish 100, can exit equably to surrounding through thin gas trace 103, destroy the generation condition of cushioning effect and do not produce displacement.
In the present embodiment, the width that per pass is dredged gas trace 103 can be 1mm, and the degree of depth can be also 1mm.The material of heat dish 100 is aluminium, and dredging gas trace 103 is by delineating out through the special tungsten carbide tipped tool grinding, and the surface of heat dish 100 is polished to without projection afterwards, in case wafer and heat dish 100 Surface Contacts are bad, causes changes in process parameters.
The restructuring process of the heat dish 100 of this PECVD film deposition equipment can be described below:
1. PECVD film deposition equipment is cooled to normal temperature, opens process cavity;
2. on eight technique positions 101 of heat dish 100, depict equably multiple tracks in length and breadth with cutter and dredge gas trace 103;
3. polished extremely without projection in the edge of dredging gas trace 103;
4. the surface of clean heat dish 100 and the cavity of process cavity;
5. process cavity heats up, PECVD film deposition equipment restoring running program.
In sum, the present invention is by depicting several thin gas trace in length and breadth on the technique position in hot panel surface, wafer is positioned over after hot panel surface is heated can exit equably to surrounding, has destroyed the generation condition of cushioning effect, thereby has avoided the wafer slide plate causing due to cushioning effect.
The present invention is through investigating for a long time, and the heat dish after improvement does not have similar slide plate phenomenon again.Through the repeatedly observation of large maintenance period, the heat dish after improvement all without impact, has been obtained good result on technological parameter, useful life.Implementation procedure of the present invention is simple, easily implement, with low cost, do not increase process costs and take device resource.
Although the present invention with preferred embodiment openly as above, it is not for limiting the present invention, and any those skilled in the art without departing from the spirit and scope of the present invention, can make possible variation and amendment.Therefore, every content that does not depart from technical solution of the present invention, any amendment, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, within all falling into the protection range that the claims in the present invention define.
Claims (10)
1. the heat dish (100) of a PECVD film deposition equipment, be positioned at process cavity, on described heat dish (100), be distributed with equably eight technique positions (101), the wafer on each described technique position (101) is pitched (102) rotation by aluminium and is delivered on next adjacent with it technique position (101); Wherein, on the each described technique position (101) of described heat dish (100), be distributed with the thin gas trace (103) that multiple tracks runs through process area.
2. the heat dish (100) of PECVD film deposition equipment according to claim 1, is characterized in that, upper in each described technique position (101), is evenly distributed with described in longitudinal four roads, horizontal seven roads and dredges gas trace (103).
3. the heat dish (100) of PECVD film deposition equipment according to claim 2, is characterized in that, the width of dredging gas trace (103) described in per pass is 1mm, and the degree of depth is 1mm.
4. the heat dish (100) of PECVD film deposition equipment according to claim 3, is characterized in that, the material of described heat dish (100) is aluminium, and described thin gas trace (103) is delineated out by tungsten carbide tipped tool.
5. the heat dish (100) of PECVD film deposition equipment according to claim 4, is characterized in that, the surface of described heat dish (100) is polished to without projection.
6. a PECVD film deposition equipment, comprise a heat dish (100) that is positioned at process cavity, on described heat dish (100), be distributed with equably eight technique positions (101), the wafer on each described technique position (101) is pitched (102) rotation by aluminium and is delivered on next adjacent with it technique position (101); Wherein, on the each described technique position (101) of described heat dish (100), be distributed with the thin gas trace (103) that multiple tracks runs through process area.
7. PECVD film deposition equipment according to claim 6, is characterized in that, upper in each described technique position (101), is evenly distributed with described in longitudinal four roads, horizontal seven roads and dredges gas trace (103).
8. PECVD film deposition equipment according to claim 7, is characterized in that, the width of dredging gas trace (103) described in per pass is 1mm, and the degree of depth is 1mm.
9. PECVD film deposition equipment according to claim 8, is characterized in that, the material of described heat dish (100) is aluminium, and described thin gas trace (103) is delineated out by tungsten carbide tipped tool.
10. PECVD film deposition equipment according to claim 9, is characterized in that, the surface of described heat dish (100) is polished to without projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410323417.1A CN104064458A (en) | 2014-07-08 | 2014-07-08 | PECVD film deposition equipment and heating plate thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410323417.1A CN104064458A (en) | 2014-07-08 | 2014-07-08 | PECVD film deposition equipment and heating plate thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104064458A true CN104064458A (en) | 2014-09-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410323417.1A Pending CN104064458A (en) | 2014-07-08 | 2014-07-08 | PECVD film deposition equipment and heating plate thereof |
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| Country | Link |
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| CN (1) | CN104064458A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111334782A (en) * | 2020-02-28 | 2020-06-26 | 北京北方华创微电子装备有限公司 | Semiconductor device and electrode device thereof |
| CN114959660A (en) * | 2022-06-01 | 2022-08-30 | 江苏邑文微电子科技有限公司 | PECVD reaction device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5810936A (en) * | 1994-07-06 | 1998-09-22 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process and apparatus employing same |
| JP2001110796A (en) * | 1999-10-05 | 2001-04-20 | Samsung Electronics Co Ltd | Susceptor system for semiconductor manufacturing facility |
| US20030198910A1 (en) * | 2000-12-22 | 2003-10-23 | Goodman Matthew G. | Susceptor pocket profile to improve process performance |
-
2014
- 2014-07-08 CN CN201410323417.1A patent/CN104064458A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5810936A (en) * | 1994-07-06 | 1998-09-22 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process and apparatus employing same |
| JP2001110796A (en) * | 1999-10-05 | 2001-04-20 | Samsung Electronics Co Ltd | Susceptor system for semiconductor manufacturing facility |
| US20030198910A1 (en) * | 2000-12-22 | 2003-10-23 | Goodman Matthew G. | Susceptor pocket profile to improve process performance |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111334782A (en) * | 2020-02-28 | 2020-06-26 | 北京北方华创微电子装备有限公司 | Semiconductor device and electrode device thereof |
| CN111334782B (en) * | 2020-02-28 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Semiconductor device and electrode device thereof |
| CN114959660A (en) * | 2022-06-01 | 2022-08-30 | 江苏邑文微电子科技有限公司 | PECVD reaction device |
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Application publication date: 20140924 |
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