CN114959660A - PECVD reaction device - Google Patents
PECVD reaction device Download PDFInfo
- Publication number
- CN114959660A CN114959660A CN202210622680.5A CN202210622680A CN114959660A CN 114959660 A CN114959660 A CN 114959660A CN 202210622680 A CN202210622680 A CN 202210622680A CN 114959660 A CN114959660 A CN 114959660A
- Authority
- CN
- China
- Prior art keywords
- supporting
- tray
- lifting mechanism
- pecvd
- rotary lifting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 54
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 29
- 230000007246 mechanism Effects 0.000 claims abstract description 52
- 235000012431 wafers Nutrition 0.000 claims abstract description 52
- 230000005540 biological transmission Effects 0.000 claims abstract description 34
- 239000000919 ceramic Substances 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 12
- 239000003638 chemical reducing agent Substances 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 7
- 230000033001 locomotion Effects 0.000 claims description 6
- 230000003028 elevating effect Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a PECVD reaction device, and relates to the technical field of semiconductors. The PECVD reaction device comprises a tray assembly, a supporting plate, a vacuum reaction cavity, a transmission assembly and a rotary lifting mechanism. Tray subassembly and supporting disk all set up in the vacuum reaction cavity, and the vacuum reaction cavity is vacuum seal cavity, and the supporting disk is used for bearing the weight of the wafer, and the tray subassembly is used for processing the wafer that bears on the supporting disk. One end of the transmission assembly enters the vacuum reaction cavity and is connected with the supporting disc, the other end of the transmission assembly is connected with the rotary lifting mechanism, and the rotary lifting mechanism is used for driving the supporting disc to lift and rotate. Therefore, the PECVD reaction device provided by the invention adopts a modular design, has a simple overall structure, is simple in lifting and rotating control, has high processing efficiency, and can accurately and stably convey wafers, so that the uniformity and the stability of the wafer processing technology are improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a PECVD reaction device.
Background
In the plasma enhanced chemical vapor deposition process of the wafer, a jacking mechanism and a rotating mechanism are usually required to bear the wafer for carrying out the deposition process, however, the existing equipment with jacking and rotating functions has a complex structure and multiple jacking and rotating processes, so that the wafer cannot be stably and accurately conveyed to each position in the processing process, and the uniformity and stability of the deposition process of the wafer are affected.
Disclosure of Invention
The invention provides a PECVD reaction device which has a simple overall structure, can accurately and stably convey wafers and ensures the uniformity and stability of a wafer processing technology.
Embodiments of the invention may be implemented as follows:
in a first aspect, the invention provides a PECVD reaction device, which comprises a tray assembly, a supporting disk, a vacuum reaction cavity, a transmission assembly and a rotary lifting mechanism, wherein the tray assembly comprises a tray plate and a supporting disk;
the tray assembly and the supporting plate are both arranged in the vacuum reaction cavity, and the vacuum reaction cavity is a vacuum sealing cavity;
the tray assembly comprises a first tray and a second tray which are arranged at intervals, and the supporting tray is arranged between the first tray and the second tray;
the supporting plate is uniformly provided with a plurality of groups of supporting fingers in an annular mode, and the plurality of groups of supporting fingers are all used for bearing wafers;
one end of the transmission assembly enters the vacuum reaction cavity and is connected with the supporting disc, and the other end of the transmission assembly is connected with the rotary lifting mechanism arranged outside the vacuum reaction cavity;
the rotary lifting mechanism drives the transmission assembly to lift and rotate, and the transmission assembly drives the supporting plate to lift and rotate so as to drive a plurality of wafers borne on a plurality of groups of supporting fingers on the supporting plate to lift and rotate.
In an optional embodiment, the transmission assembly comprises a transmission rod and a ceramic connecting piece, one end of the transmission rod is connected with the rotary lifting mechanism, the other end of the transmission rod is connected with the ceramic connecting piece, a through hole is formed in the bottom of the vacuum reaction cavity, the ceramic connecting piece penetrates through the through hole and is connected with the supporting disc, and the ceramic connecting piece can be driven by the transmission rod to move up and down along the through hole.
In an optional embodiment, the PECVD reaction apparatus further comprises a driving mechanism, wherein the driving mechanism is connected with the rotary lifting mechanism, and the driving mechanism is used for outputting power to the rotary lifting mechanism so as to drive the transmission assembly to perform lifting and rotating motions.
In an optional embodiment, the driving mechanism comprises a driving motor, a speed reducer and a coupler, the driving motor, the speed reducer and the coupler are sequentially connected, and the coupler is connected with the rotary lifting mechanism.
In an alternative embodiment, the rotary lift mechanism is a lift cam divider.
In an optional embodiment, six groups of the supporting fingers are uniformly arranged on the supporting plate in an annular mode, and the jacking cam divider is a six-station jacking cam divider;
or eight groups of supporting fingers are uniformly arranged on the supporting plate in an annular mode, and the jacking cam divider is an eight-station jacking cam divider.
In an alternative embodiment, the second tray is provided with a plurality of stations, and the plurality of stations correspond to the plurality of groups of supporting fingers one to one.
In an alternative embodiment, the rotary lifting mechanism is configured to drive the supporting plate to rotate intermittently, so that any one group of the supporting fingers rotates from the station where the group of the supporting fingers is located to another adjacent station.
In an optional embodiment, the rotary lifting mechanism is further configured to drive the support disc to lift, and drive the support disc to rotate one of the stations and then drive the support disc to descend.
In an optional implementation manner, a plurality of stations are provided with accommodating grooves matched with the shapes of the supporting fingers, and the accommodating grooves are used for accommodating the supporting fingers.
The PECVD reaction device provided by the embodiment of the invention has the beneficial effects that: the PECVD reaction device adopts a modular design, has simple integral structure, simple lifting and rotating control and high processing efficiency, and can accurately and stably convey wafers, thereby improving the uniformity and stability of the wafer processing technology.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of a PECVD reaction apparatus according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a PECVD reaction apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view of a partial structure of a PECVD reaction apparatus according to an embodiment of the present invention;
fig. 4 is a schematic structural view of a second tray and a supporting tray according to an embodiment of the present invention.
Icon: 10-PECVD reaction device; 100-a tray assembly; 110-a first tray; 120-a second tray; 121-station; 122-a receiving groove; 200-a support disk; 210-supporting a finger; 300-vacuum reaction chamber; 310-an upper sealing plate; 320-a lower sealing plate; 321-a through hole; 330-side plate; 400-a transmission assembly; 410-a transmission rod; 420-a ceramic connector; 500-rotating lifting mechanism; 600-a drive mechanism; 610-a drive motor; 620-reducer; 630-coupling.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are only used to distinguish one description from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1 to 4, the present invention provides a PECVD reaction apparatus 10, which includes a tray assembly 100, a support tray 200, a vacuum reaction chamber 300, a transmission assembly 400, a rotary lifting mechanism 500, and a driving mechanism 600.
The vacuum reaction chamber 300 is composed of an upper sealing plate 310, a lower sealing plate 320, and a side plate 330, and a vacuum chamber is formed by the upper sealing plate 310, the lower sealing plate 320, and the side plate 330. The tray assembly 100 and the supporting plate 200 are both arranged in the vacuum reaction cavity 300, the tray assembly 100 processes a wafer loaded on the supporting plate 200, one end of the transmission assembly 400 enters the vacuum reaction cavity 300 and is connected with the supporting plate 200, the other end of the transmission assembly is connected with a rotary lifting mechanism 500 arranged outside the vacuum reaction cavity 300, and the driving mechanism 600 is connected with the rotary lifting mechanism 500.
In the present embodiment, the supporting plate 200 is used for carrying a wafer, and the rotary lifting mechanism 500 is used for driving the supporting plate 200 to perform lifting and rotating motions under the driving of the driving mechanism 600, so as to bring the wafer carried on the supporting plate 200 to a corresponding position on the tray assembly 100 for processing. The PECVD reaction device 10 provided by the invention adopts a modular design, has a simple overall structure, is simple in lifting and rotating control, has high processing efficiency, and can accurately and stably convey wafers, so that the uniformity and the stability of a wafer processing technology are improved.
Further, the tray assembly 100 includes a first tray 110 and a second tray 120 which are arranged at an interval, a plurality of groups of supporting fingers 210 are uniformly arranged around the supporting tray 200, the plurality of groups of supporting fingers 210 are all arranged between the first tray 110 and the second tray 120, and the plurality of groups of supporting fingers 210 are all used for bearing the wafer.
In the present embodiment, the supporting fingers 210 are supporting rods disposed around the edge of the supporting plate 200 at equal intervals, two supporting fingers 210 form a group, and one group of supporting fingers 210 carries one wafer. The first tray 110 is connected to the upper sealing plate 310 at a distance, the second sealing plate is connected to the lower sealing plate 320 at a distance, and the supporting tray 200 can move up and down between the first tray 110 and the second tray 120 under the driving of the driving assembly 400.
In practical applications, the supporting fingers 210 bring the wafer between the first tray 110 and the second tray 120, so as to perform processes such as heating, coating, etc. on the wafer through the first tray 110 and the second tray 120.
Further, the second tray 120 is provided with a plurality of stations 121, and the plurality of stations 121 correspond to the plurality of supporting fingers 210 one to one.
In this embodiment, the second tray 120 is generally provided with six stations 121 or eight stations 121, correspondingly, the supporting fingers 210 are provided with six or eight groups, and the multiple groups of supporting fingers 210 are in one-to-one correspondence with the multiple stations 121, so that the wafers carried on the multiple groups of supporting fingers 210 can be processed on the multiple stations 121 at the same time, thereby improving the processing efficiency and ensuring that the processing is effectively and stably performed.
Of course, the number of the stations 121 and the number of the groups of the supporting fingers 210 disposed on the second tray 120 may be other arrangements, and are not limited herein.
It should be noted that one of the stations 121 may convey the processed wafer out of the vacuum reaction chamber 300 and receive a wafer to be processed, and the accommodating groove 122 formed in the station 121 is a through groove. Therefore, after each wafer enters the vacuum reaction cavity 300, one-time processing is performed at each station 121, and in the process, the wafers which are processed are continuously conveyed out of the vacuum reaction cavity 300, and meanwhile, the wafers which are to be processed are continuously conveyed into the vacuum reaction cavity 300 to be processed, so that the wafers are processed in a flow line mode, the processing efficiency is greatly improved, all the wafers are driven by the supporting fingers 210 of the same supporting disc 200, the moving range of all the wafers is consistent, the wafer conveying stability is guaranteed, and the consistency and the uniformity of wafer processing are improved.
Specifically, the plurality of stations 121 are all provided with a receiving groove 122 adapted to the shape of the supporting finger 210, and the receiving groove 122 is used for receiving the supporting finger 210.
In the embodiment, the supporting fingers 210 are accommodated in the accommodating grooves 122 to place the wafer on the second tray 120, in this case, the wafer is supported by the second tray 120, so that the wafer is only in contact with the second tray 120, and the adverse effect on the processing caused by the contact of the supporting fingers 210 with the wafer is avoided.
Further, the rotary lifting mechanism 500 is configured to drive the supporting disc 200 to ascend, and in a state of ascending to a preset position, the rotary lifting mechanism 500 drives the supporting disc 200 to intermittently rotate, so that any one group of supporting fingers 210 rotates from the station 121 where the group of supporting fingers 210 is located to another adjacent station 121, after the supporting disc 200 rotates to one station 121, the rotary lifting mechanism 500 finally drives the supporting disc 200 to descend until the supporting fingers 210 on the supporting disc 200 are embedded into the accommodating groove 122 and separated from the wafer, thereby completing a complete movement process, and performing a circular movement in this way.
It should be noted that, at the station 121 for receiving and transporting the wafer, after the support plate 200 is lifted to the preset position, the processed wafer is transported out of the vacuum reaction chamber 300, and receives a wafer to be processed, and then drives the wafer to rotate to the station 121 adjacent to the station 121 for receiving and transporting the wafer, and then descends again to perform the first processing of the wafer.
Further, the rotary lifting mechanism 500 is a jacking cam divider, the jacking cam divider is simple in structure and convenient to disassemble and maintain, the cost is saved, the stability and the accuracy are high, and the processing quality and the efficiency of the wafer can be effectively improved.
In the present embodiment, the number of the sets of the supporting fingers 210 corresponds to the number of the sets of the supporting fingers 210, that is, the number of the sets of the supporting fingers 210 evenly surrounding the supporting plate 200 is six, the lifting cam divider is a six-position lifting cam divider, or the number of the sets of the supporting fingers 210 evenly surrounding the supporting plate 200 is eight, the lifting cam divider is an eight-position lifting cam divider.
Of course, the jacking cam dividers may be other jacking cam dividers of other stations 121 as long as the number of the groups of the supporting fingers 210 is the same, and is not particularly limited herein.
Further, the drive assembly 400 includes a drive rod 410 and a ceramic link 420.
One end of the transmission rod 410 is connected with the rotary lifting mechanism 500, the other end is connected with the ceramic connecting piece 420, the bottom of the vacuum reaction cavity 300 is provided with a through hole 321, the ceramic connecting piece 420 penetrates through the through hole 321 to be connected with the support disc 200, and the ceramic connecting piece 420 can be driven by the transmission rod 410 to move up and down along the through hole 321.
In the present embodiment, the through-hole 321 is opened in the lower sealing plate 320. In addition, the wafer is usually processed at a higher temperature, so the ceramic connecting member 420 made of ceramic material is high temperature resistant, and the supporting plate 200 is prevented from being affected by the ceramic connecting member 420 under the condition of heating in the vacuum reaction chamber 300, thereby affecting the processing quality of the wafer.
Further, the driving mechanism 600 is used for outputting power to the rotary elevating mechanism 500 to drive the transmission assembly 400 to perform elevating and rotating movements.
Further, the driving mechanism 600 includes a driving motor 610, a speed reducer 620, and a coupling 630, the driving motor 610, the speed reducer 620, and the coupling 630 are sequentially connected, and the coupling 630 is connected to the rotary lifting mechanism 500.
In this embodiment, the driving motor 610 drives the speed reducer to output torque, and the coupling 630 transmits the output torque to the rotary lifting mechanism 500, so that the rotary lifting mechanism drives the supporting plate 200 to rotate and lift through the transmission assembly 400.
In summary, the embodiment of the present invention provides a PECVD reaction apparatus 10 that adopts a modular design, has a simple overall structure, is simple to control the lifting and rotating, has a high processing efficiency, and can accurately and stably transport wafers, thereby improving the uniformity and stability of the wafer processing technology.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A PECVD reaction device is characterized by comprising a tray component, a supporting disk, a vacuum reaction cavity, a transmission component and a rotary lifting mechanism;
the tray assembly and the supporting plate are both arranged in the vacuum reaction cavity, and the vacuum reaction cavity is a vacuum sealing cavity;
the tray assembly comprises a first tray and a second tray which are arranged at intervals, and the supporting tray is arranged between the first tray and the second tray;
the supporting plate is uniformly provided with a plurality of groups of supporting fingers in an annular mode, and the plurality of groups of supporting fingers are all used for bearing wafers;
one end of the transmission assembly enters the vacuum reaction cavity and is connected with the supporting disc, and the other end of the transmission assembly is connected with the rotary lifting mechanism arranged outside the vacuum reaction cavity;
the rotary lifting mechanism drives the transmission assembly to lift and rotate, and the transmission assembly drives the supporting plate to lift and rotate so as to drive a plurality of wafers borne on a plurality of groups of supporting fingers on the supporting plate to lift and rotate.
2. The PECVD reaction device according to claim 1, wherein the transmission assembly comprises a transmission rod and a ceramic connecting piece, one end of the transmission rod is connected with the rotary lifting mechanism, the other end of the transmission rod is connected with the ceramic connecting piece, a through hole is formed in the bottom of the vacuum reaction cavity, the ceramic connecting piece penetrates through the through hole and is connected with the support plate, and the ceramic connecting piece can be driven by the transmission rod to move up and down along the through hole.
3. The PECVD reactor of claim 1, further comprising a driving mechanism connected to the rotary elevating mechanism, wherein the driving mechanism is configured to output power to the rotary elevating mechanism to drive the transmission assembly to perform an elevating and rotating motion.
4. The PECVD reaction device of claim 3, wherein the driving mechanism comprises a driving motor, a speed reducer and a coupling, the driving motor, the speed reducer and the coupling are sequentially connected, and the coupling is connected with the rotary lifting mechanism.
5. The PECVD reactor of claim 1, wherein the rotational lifting mechanism is a lift cam divider.
6. The PECVD reaction device of claim 5, wherein the support plate is uniformly provided with six groups of the support fingers around the support plate, and the jacking cam divider is a six-station jacking cam divider;
or eight groups of supporting fingers are uniformly arranged on the supporting plate in an annular mode, and the jacking cam divider is an eight-station jacking cam divider.
7. A PECVD reactor according to claim 1, characterized in that the second tray is provided with a plurality of stations, which correspond one-to-one to a plurality of groups of the supporting fingers.
8. A PECVD reaction device as in claim 7 wherein the rotary lifting mechanism is used to rotate the support plate intermittently to rotate any one set of the supporting fingers from the station where the set of the supporting fingers is located to another adjacent station.
9. The PECVD reaction device of claim 8, wherein the rotary lifting mechanism is further configured to lift the support plate and rotate the support plate for one of the stations to lower the support plate.
10. The PECVD reaction device of claim 7, wherein a plurality of the stations are provided with accommodating grooves matched with the supporting fingers in shape, and the accommodating grooves are used for accommodating the supporting fingers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210622680.5A CN114959660A (en) | 2022-06-01 | 2022-06-01 | PECVD reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210622680.5A CN114959660A (en) | 2022-06-01 | 2022-06-01 | PECVD reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114959660A true CN114959660A (en) | 2022-08-30 |
Family
ID=82958825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210622680.5A Pending CN114959660A (en) | 2022-06-01 | 2022-06-01 | PECVD reaction device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114959660A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115483143A (en) * | 2022-09-27 | 2022-12-16 | 上海众鸿电子科技有限公司 | Wafer lifting device for glue spreading developing machine and glue spreading developing machine |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030136513A1 (en) * | 2001-01-22 | 2003-07-24 | Lee Soon Ho | Semiconductor manufacturing apparatus |
| CN104064458A (en) * | 2014-07-08 | 2014-09-24 | 上海先进半导体制造股份有限公司 | PECVD film deposition equipment and heating plate thereof |
| CN207774199U (en) * | 2018-01-18 | 2018-08-28 | 上海厚谷智能科技有限公司 | Rotation jacking material storage mechanism and automatic loading and unloading system |
| CN110047790A (en) * | 2018-01-15 | 2019-07-23 | 北京北方华创微电子装备有限公司 | Double-shaft mechanism and semiconductor processing equipment |
| CN111334782A (en) * | 2020-02-28 | 2020-06-26 | 北京北方华创微电子装备有限公司 | Semiconductor device and electrode device thereof |
| CN111850517A (en) * | 2020-06-30 | 2020-10-30 | 北京北方华创微电子装备有限公司 | Lower electrode assembly and process chamber |
| CN114141684A (en) * | 2021-11-28 | 2022-03-04 | 盛吉盛(宁波)半导体科技有限公司 | Wafer rotating device and chemical vapor deposition equipment |
-
2022
- 2022-06-01 CN CN202210622680.5A patent/CN114959660A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030136513A1 (en) * | 2001-01-22 | 2003-07-24 | Lee Soon Ho | Semiconductor manufacturing apparatus |
| CN104064458A (en) * | 2014-07-08 | 2014-09-24 | 上海先进半导体制造股份有限公司 | PECVD film deposition equipment and heating plate thereof |
| CN110047790A (en) * | 2018-01-15 | 2019-07-23 | 北京北方华创微电子装备有限公司 | Double-shaft mechanism and semiconductor processing equipment |
| CN207774199U (en) * | 2018-01-18 | 2018-08-28 | 上海厚谷智能科技有限公司 | Rotation jacking material storage mechanism and automatic loading and unloading system |
| CN111334782A (en) * | 2020-02-28 | 2020-06-26 | 北京北方华创微电子装备有限公司 | Semiconductor device and electrode device thereof |
| CN111850517A (en) * | 2020-06-30 | 2020-10-30 | 北京北方华创微电子装备有限公司 | Lower electrode assembly and process chamber |
| CN114141684A (en) * | 2021-11-28 | 2022-03-04 | 盛吉盛(宁波)半导体科技有限公司 | Wafer rotating device and chemical vapor deposition equipment |
Non-Patent Citations (1)
| Title |
|---|
| 彭海兰: "《自动化生产线安装与调试》", 武汉大学出版社 , pages: 46 - 48 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115483143A (en) * | 2022-09-27 | 2022-12-16 | 上海众鸿电子科技有限公司 | Wafer lifting device for glue spreading developing machine and glue spreading developing machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101922042B (en) | Epitaxial wafer tray and support and rotation connecting device matched with same | |
| CN104752275A (en) | Processing chamber and semiconductor processing equipment | |
| CN114959660A (en) | PECVD reaction device | |
| WO2023125158A1 (en) | Semiconductor processing device and wafer transport system thereof | |
| CN113718229B (en) | Semiconductor process chamber, semiconductor process equipment and semiconductor process method | |
| CN107958864A (en) | Substrate board treatment and substrate processing method using same | |
| CN113972154A (en) | Process chamber, semiconductor processing equipment and semiconductor processing method | |
| CN102564287A (en) | Method for measuring film thickness of wafer by using wafer platform | |
| KR20180035663A (en) | Substrate alignment apparatus, substrate processing apparatus, substrate arrangement apparatus, substrate alignment method, substrate processing method, and substrate arrangement method | |
| CN111471965A (en) | Conveying carrier plate, vacuum coating equipment and vacuum coating method | |
| CN104425329A (en) | Substrate transfer and processing system and substrate transfer and processing method | |
| CN220189609U (en) | Carrying frame for semiconductor equipment | |
| CN110660723A (en) | Manipulator, bonding cavity, wafer bonding system and bonding method | |
| CN207958544U (en) | A kind of rotating supporting device of extension tablet tray | |
| CN111863699A (en) | Bearing device and process chamber | |
| CN218069806U (en) | Mechanical finger structure for transmitting wafer and wafer carrying robot | |
| CN110273143B (en) | Process chamber and semiconductor processing equipment | |
| CN214099642U (en) | Process equipment | |
| CN109994409B (en) | Wafer placing and carrying method | |
| CN109423628B (en) | Disposable full-surface vapor deposition support, vapor deposition furnace and deposition method thereof | |
| CN108470704B (en) | Pass piece cavity and semiconductor processing equipment | |
| CN213680881U (en) | Chemical vapor deposition apparatus | |
| CN212270220U (en) | Conveying carrier plate and vacuum coating equipment | |
| US20130149078A1 (en) | Substrate-processing apparatus and substrate-transferring method | |
| CN105762098B (en) | Film conveying system and semiconductor processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 226400 No.1 Jinshan Road, zuegang street, Rudong County, Nantong City, Jiangsu Province Applicant after: Jiangsu Yiwen Microelectronics Technology Co.,Ltd. Applicant after: Wuxi Yiwen Microelectronics Technology Co.,Ltd. Address before: 226400 No.1 Jinshan Road, zuegang street, Rudong County, Nantong City, Jiangsu Province Applicant before: Jiangsu Yiwen Microelectronics Technology Co.,Ltd. Applicant before: WUXI YIWEN ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
| CB02 | Change of applicant information |