JP2001110783A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2001110783A5 JP2001110783A5 JP1999289146A JP28914699A JP2001110783A5 JP 2001110783 A5 JP2001110783 A5 JP 2001110783A5 JP 1999289146 A JP1999289146 A JP 1999289146A JP 28914699 A JP28914699 A JP 28914699A JP 2001110783 A5 JP2001110783 A5 JP 2001110783A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- processing apparatus
- magnetic field
- flat plate
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 210000002381 Plasma Anatomy 0.000 claims 2
- 230000003993 interaction Effects 0.000 claims 1
Claims (5)
該被加工試料に対面する位置に配置した平面版と、電子サイクロトロンとを備えたプラズマ処理装置において、In a plasma processing apparatus comprising a flat plate disposed at a position facing the sample to be processed and an electron cyclotron,
上記平面版から導入する電磁波と磁場の相互作用によって上記ガス導入手段で導入したガスをプラズマ化し、The gas introduced by the gas introduction means is converted into plasma by the interaction between the electromagnetic wave and the magnetic field introduced from the plane plate,
さらに上記電子サイクロトロンの共鳴磁場面の分布を制御することによって、上記プラズマ化を制御することを特徴とするプラズマ処理装置。Furthermore, the plasma processing is controlled by controlling the distribution of the resonance magnetic field surface of the electron cyclotron.
上記平面板の上記被加工試料に対面する面の上下Up and down of the surface of the flat plate facing the workpiece 50mm50mm の範囲に上記電子サイクロトロンによる共鳴時場面を配置することを特徴とするプラズマ処理装置。The plasma processing apparatus is characterized in that a scene at the time of resonance by the electron cyclotron is arranged in a range of.
上記電子サイクロトロンによる共鳴磁場面を上記平面板の径方向に分布させ、上記共鳴磁場面を上記平面板の上記被加工試料に対面する面に対し下方向の湾曲から上方向の湾曲の範囲に配置することを特徴とするプラズマ処理装置。The resonance magnetic field surface by the electron cyclotron is distributed in the radial direction of the flat plate, and the resonance magnetic field surface is arranged in a range from a downward curve to an upward curve with respect to the surface of the flat plate facing the sample to be processed. A plasma processing apparatus.
上記平面板の上記被加工試料に対する面の中心部における上記共鳴磁場面の湾曲と上記面との距離と、上記面内で上記中心部からThe curvature of the resonance magnetic field surface at the center of the surface of the plane plate with respect to the sample to be processed and the distance between the surface and the center within the surface. 150mm150mm 離れた部分における上記共鳴磁場面の湾曲と上記面との距離との差がThe difference between the curvature of the resonance magnetic field surface and the distance to the surface in the remote part is 50mm50mm 以内であることを特徴とするプラズマ処理装置。A plasma processing apparatus characterized by being within a range.
上記平面板中央部での磁場の磁力線の向きが上記平面板に対し平行から垂直までの範囲であることを特徴とするプラズマ処理装置。The plasma processing apparatus, wherein the direction of the magnetic force lines of the magnetic field at the central portion of the flat plate is in a range from parallel to perpendicular to the flat plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28914699A JP2001110783A (en) | 1999-10-12 | 1999-10-12 | Apparatus and method for plasma treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28914699A JP2001110783A (en) | 1999-10-12 | 1999-10-12 | Apparatus and method for plasma treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001110783A JP2001110783A (en) | 2001-04-20 |
| JP2001110783A5 true JP2001110783A5 (en) | 2005-02-17 |
Family
ID=17739362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28914699A Pending JP2001110783A (en) | 1999-10-12 | 1999-10-12 | Apparatus and method for plasma treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001110783A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5103025B2 (en) * | 2006-02-10 | 2012-12-19 | 九州電通株式会社 | Method for removing surface layer of silicon wafer |
| JP2010034415A (en) | 2008-07-30 | 2010-02-12 | Hitachi High-Technologies Corp | Plasma treatment method |
| JP7000568B2 (en) * | 2019-06-21 | 2022-01-19 | 株式会社日立ハイテク | Plasma processing method |
-
1999
- 1999-10-12 JP JP28914699A patent/JP2001110783A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW306008B (en) | ||
| WO2015139503A1 (en) | Magnetron sputtering chamber and magnetron sputtering device | |
| US20120097870A1 (en) | Apparatus for forming a magnetic field and methods of use thereof | |
| EP1067578A3 (en) | Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance | |
| US6396024B1 (en) | Permanent magnet ECR plasma source with integrated multipolar magnetic confinement | |
| JP6600990B2 (en) | Plasma processing equipment | |
| TW408358B (en) | Improved inductively coupled plasma source | |
| JP6719290B2 (en) | Reinforcement structure, vacuum chamber, and plasma processing equipment | |
| JP3881307B2 (en) | Plasma processing equipment | |
| JP2001110783A5 (en) | ||
| TW377460B (en) | Central coil design for ionized metal plasma deposition | |
| JP4003305B2 (en) | Plasma processing method | |
| JP2000357683A5 (en) | ||
| CN105779952A (en) | Magnetron assembly and magnetron sputtering equipment | |
| WO1991004827A1 (en) | A magnetic plasma producing device with adjustable resonance plane | |
| KR20150130647A (en) | Antenna Structure for Plasma Processing Apparatus | |
| JPH11200057A (en) | Induction coupling type process plasma apparatus | |
| JP2590112B2 (en) | Microwave plasma processing equipment | |
| JP3896180B2 (en) | Plasma processing equipment | |
| JP3973855B2 (en) | Plasma processing method and apparatus | |
| JP4000517B2 (en) | Microwave plasma processing equipment | |
| JPS5867870A (en) | Magnetically attached magnetron-type apparatus for high-speed plasma etching or reactive ion etching | |
| KR20190050527A (en) | Apparatus for processing inductively coupled plasma | |
| JP2002043289A (en) | Method and device for plasma processing | |
| JP2001068299A (en) | Device and method for plasma treatment |