JP2001102330A - Method for manufacturing substrate - Google Patents
Method for manufacturing substrateInfo
- Publication number
- JP2001102330A JP2001102330A JP28089599A JP28089599A JP2001102330A JP 2001102330 A JP2001102330 A JP 2001102330A JP 28089599 A JP28089599 A JP 28089599A JP 28089599 A JP28089599 A JP 28089599A JP 2001102330 A JP2001102330 A JP 2001102330A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- substrate
- motherboard
- water
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Dicing (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、マザーボードに複
数の基板を多数面取りし、前記マザーボードより基板を
切り出す基板の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a board by chamfering a plurality of boards on a motherboard and cutting the boards from the motherboard.
【０００２】[0002]
【従来の技術】小型のアクティブマトリクス型液晶表示
装置では、マザーボードにポリシリコン薄膜トランジス
タなどを設けたアクティブマトリクス基板を多数面取り
し、切断して分離した後、チップ状態で液晶表示装置の
組立工程を行うことが多い。図３〜図５は、従来のアク
ティブマトリクス基板の製造方法を示す。2. Description of the Related Art In a small active matrix type liquid crystal display device, a large number of active matrix substrates provided with a polysilicon thin film transistor or the like on a mother board are chamfered, cut and separated, and then the liquid crystal display device is assembled in a chip state. Often. 3 to 5 show a method for manufacturing a conventional active matrix substrate.
【０００３】図３はマザーボード１の平面図を示し、図
４はＡ−Ｂ線に沿う断面図を示す。マザーボード１に
は、ポリシリコン薄膜トランジスタなどを設けたアクテ
ィブマトリクス基板２が多数面取りされている。マザー
ボード１からのアクティブマトリクス基板２の切り出し
は、例えば図５に示すようにダイシングブレード５を用
いたダイシング加工により行われる。FIG. 3 is a plan view of the motherboard 1, and FIG. 4 is a sectional view taken along line AB. On the motherboard 1, a large number of active matrix substrates 2 provided with polysilicon thin film transistors and the like are chamfered. The cutting of the active matrix substrate 2 from the motherboard 1 is performed, for example, by dicing using a dicing blade 5 as shown in FIG.
【０００４】このようなダイシング加工では、アクティ
ブマトリクス基板２の面取り、切断、分離の際に切屑や
ダスト６が発生してアクティブマトリクス基板２の表面
に固着しやすく、この切屑やダスト６が液晶表示装置を
組み立てた後にも残った場合には、付着部分に表示不良
が発生する。そのため、マザーボード１の表面には、切
屑やダスト６の付着を防ぐために保護膜７が形成され
る。In such a dicing process, chips and dust 6 are generated at the time of chamfering, cutting and separation of the active matrix substrate 2 and are likely to adhere to the surface of the active matrix substrate 2. If it remains after assembling the device, a display defect occurs at the attached portion. Therefore, a protective film 7 is formed on the surface of the motherboard 1 to prevent chips and dust 6 from adhering.
【０００５】ダイシング加工では面取り、切断、分離の
時に冷却水を使用することから、この保護膜７を水溶性
材料にて形成すると溶解してしまうため、保護膜７は、
ノボラック系樹脂、環化ゴム系樹脂などの難水溶性の材
料にて形成される。切り出したアクティブマトリクス基
板２から保護膜７を除去する際には、アルカリ性無機溶
剤、アルカリ性有機溶剤および中性有機溶剤などの溶剤
にて保護膜７が溶解され、その後水による洗浄が行われ
る。In dicing, since cooling water is used for chamfering, cutting and separating, if the protective film 7 is formed of a water-soluble material, the protective film 7 is dissolved.
It is formed of a poorly water-soluble material such as a novolak resin or a cyclized rubber resin. When removing the protective film 7 from the cut-out active matrix substrate 2, the protective film 7 is dissolved with a solvent such as an alkaline inorganic solvent, an alkaline organic solvent and a neutral organic solvent, and then washed with water.
【０００６】このような保護膜７以外にも、特開平６−
２７３６１７号公報に記載のように、マザーボード１に
形成したポリビニールアルコール系樹脂からなる塗布膜
に、粘着性フィルムを貼り合わせた保護膜が提案されて
いる。このポリビニールアルコール系樹脂と粘着性フィ
ルムからなる保護膜は、基板の面取り、切断、分離が行
われた後、合成フィルムが剥離され、ポリビニールアル
コール系樹脂が水で溶解されて取り除かれる。[0006] In addition to such a protective film 7,
As described in Japanese Patent No. 273617, a protective film in which an adhesive film is bonded to a coating film made of a polyvinyl alcohol resin formed on the motherboard 1 has been proposed. After the substrate is chamfered, cut and separated from the protective film composed of the polyvinyl alcohol-based resin and the adhesive film, the synthetic film is peeled off, and the polyvinyl alcohol-based resin is dissolved in water and removed.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記の
ような難水溶性の保護膜７は、保護膜７を溶解する溶剤
がアルカリ性溶剤である場合には、アクティブマトリク
ス基板２に形成されたアルミ配線が腐食されるという問
題がある。また、中性有機溶剤を用いた場合でも有機溶
剤がアクティブマトリクス基板２の表面に残るという問
題がある。有機溶剤の残った基板にてアクティブマトリ
クス型液晶表示装置を製造すると、配向膜の材料として
ポリイミドなどの有機高分子材料が使用されているため
配向膜の塗布工程で塗布ムラが生じ、画質の悪化が発生
する。However, when the solvent dissolving the protective film 7 is an alkaline solvent, the poorly water-soluble protective film 7 described above cannot be used for the aluminum wiring formed on the active matrix substrate 2. Is corroded. Further, even when a neutral organic solvent is used, there is a problem that the organic solvent remains on the surface of the active matrix substrate 2. When an active matrix type liquid crystal display device is manufactured on a substrate with an organic solvent remaining, an organic polymer material such as polyimide is used as a material for the alignment film, so that application unevenness occurs in the coating process of the alignment film, resulting in deterioration of image quality. Occurs.
【０００８】また、特開平６−２７３６１７号公報に記
載の構成では、有機溶剤がアクティブマトリクス基板２
の表面に残ることはないが、合成樹脂製フィルムを剥離
する時にアクティブマトリクス基板２が帯電して、薄膜
トランジスタの静電破壊などが発生する。本発明は前記
問題点を解決し、基板に切り屑やダストを付着させるこ
となく、また基板の劣化や洗浄時の有機溶剤の付着を生
じることなく、マザーボードから複数の基板を多数面取
りして切り出すことのできる基板の製造方法を提供する
ことを目的とする。In the configuration described in JP-A-6-273617, an organic solvent is used in the active matrix substrate 2.
However, the active matrix substrate 2 is charged when the synthetic resin film is peeled off, and electrostatic breakdown of the thin film transistor occurs. The present invention solves the above problems, and cuts out a large number of substrates from a motherboard without causing chips and dust to adhere to the substrates and without causing deterioration of the substrates and adhesion of an organic solvent during cleaning. It is an object of the present invention to provide a method for manufacturing a substrate that can be used.
【０００９】[0009]
【課題を解決するための手段】本発明の基板の製造方法
は、マザーボードの表面に特殊な構成とした保護膜を形
成することを特徴とする。この本発明によると、切り屑
やダストの付着を防止できるだけでなく、基板の劣化や
有機溶剤の付着を生じることなくマザーボードから複数
の基板を多数面取りして切り出すことができる。A method of manufacturing a substrate according to the present invention is characterized in that a protective film having a special configuration is formed on the surface of a motherboard. According to the present invention, not only the adhesion of chips and dust can be prevented, but also a large number of substrates can be chamfered and cut out from the motherboard without causing deterioration of the substrates or adhesion of the organic solvent.
【００１０】[0010]
【発明の実施の形態】本発明の請求項１記載の基板の製
造方法は、マザーボードに複数の基板を多数面取りし、
前記マザーボードより基板を切り出すに際し、前記マザ
ーボードの表面に水溶性の第１の保護膜を形成し、次い
で前記水溶性の第１の保護膜の上に難水溶性の第２の保
護膜を形成し、前記第１，第２の保護膜が形成されたマ
ザーボードを切断して複数の基板を切り出し、前記切断
された基板を溶剤にて洗浄して前記第２の保護膜を除去
し、次いで水にて洗浄して第１の保護膜を除去すること
を特徴とする。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS According to a method of manufacturing a substrate according to the first aspect of the present invention, a plurality of substrates are chamfered on a motherboard.
When cutting a substrate from the motherboard, a water-soluble first protective film is formed on the surface of the motherboard, and then a poorly water-soluble second protective film is formed on the water-soluble first protective film. Cutting the motherboard on which the first and second protective films are formed, cutting out a plurality of substrates, washing the cut substrate with a solvent to remove the second protective film, and then immersing the substrate in water And cleaning to remove the first protective film.
【００１１】本発明の請求項２記載の基板の製造方法
は、請求項１において、基板は液晶表示装置に用いるア
クティブマトリクス基板であることを特徴とする。本発
明の請求項３記載の基板の製造方法は、請求項１におい
て、マザーボードは半導体ウエハであり、基板は半導体
チップであることを特徴とする。本発明の請求項４記載
の基板の製造方法は、請求項３において、半導体チップ
はＣＣＤ撮像素子に用いる基板であることを特徴とす
る。According to a second aspect of the present invention, in the method for manufacturing a substrate, the substrate is an active matrix substrate used for a liquid crystal display device. According to a third aspect of the present invention, in the method for manufacturing a substrate, the motherboard is a semiconductor wafer and the substrate is a semiconductor chip. According to a fourth aspect of the present invention, there is provided a substrate manufacturing method according to the third aspect, wherein the semiconductor chip is a substrate used for a CCD imaging device.
【００１２】本発明の請求項５記載の基板の製造方法
は、請求項１において、第１の保護膜としてポリビニル
アルコール系樹脂、ポリビニルピロリドン系樹脂を用
い、第２の保護膜として環化ゴム系樹脂、ノボラック系
樹脂、ヒドロキシレン系樹脂、多価アクリレート系樹脂
を用いることを特徴とする。以下、本発明の基板の製造
方法を図１と図２を用いて説明する。According to a fifth aspect of the present invention, in the method for manufacturing a substrate according to the first aspect, a polyvinyl alcohol-based resin or a polyvinyl pyrrolidone-based resin is used as the first protective film, and a cyclized rubber-based resin is used as the second protective film. It is characterized by using a resin, a novolak resin, a hydroxylene resin, and a polyvalent acrylate resin. Hereinafter, a method of manufacturing a substrate according to the present invention will be described with reference to FIGS.
【００１３】なお、上記従来例を示す図３〜図５と同様
をなすものには同一の符号を付けて説明する。この実施
の形態では、マザーボードから切り出す基板が絶縁体基
板あるいは半導体基板の上にマトリクス状に薄膜トラン
ジスタまたはＭＯＳトランジスタを設けたアクティブマ
トリクス基板である例を挙げて基板の製造方法を説明す
る。The same reference numerals as in FIGS. 3 to 5 which show the above-mentioned conventional example denote the same parts. In this embodiment, a method of manufacturing a substrate will be described by taking an example in which a substrate cut out from a motherboard is an active matrix substrate in which thin film transistors or MOS transistors are provided in a matrix on an insulator substrate or a semiconductor substrate.
【００１４】図１に示すように、複数の基板２が面取り
されたマザーボード１から、アクティブマトリクス基板
２を切り出すに際し、図２のステップＳ１に示すよう
に、マザーボード１の表面にポリビニルアルコール系樹
脂やポリビニルピロリドン系樹脂などの樹脂を塗布して
硬化し、第１の保護膜として水溶性の保護膜３を形成す
る。As shown in FIG. 1, when the active matrix substrate 2 is cut out from the mother board 1 from which a plurality of substrates 2 are chamfered, as shown in step S1 of FIG. A resin such as a polyvinylpyrrolidone-based resin is applied and cured to form a water-soluble protective film 3 as a first protective film.
【００１５】次いで、ステップＳ２に示すように、前記
第１の保護膜の上に環化ゴム系樹脂、ノボラック系樹
脂、ヒドロキシレン系樹脂、多価アクリレート系樹脂な
どの難水溶性樹脂を塗布して硬化し、第２の保護膜とし
て難水溶性の保護膜４を形成する。ステップＳ３では、
第１，第２の保護膜が形成されたマザーボード１を、上
記従来例を示す図５と同様にダイシングブレード５にて
アクティブマトリクス基板２の面取り、切断、分離を行
う。Next, as shown in step S2, a poorly water-soluble resin such as a cyclized rubber-based resin, a novolak-based resin, a hydroxylene-based resin, or a polyvalent acrylate-based resin is applied on the first protective film. To form a poorly water-soluble protective film 4 as a second protective film. In step S3,
The mother board 1 on which the first and second protective films are formed is chamfered, cut, and separated from the active matrix substrate 2 by a dicing blade 5 in the same manner as in FIG.
【００１６】ステップＳ４では、切り出されたアクティ
ブマトリクス基板２を有機溶剤にて洗浄し、第２の保護
膜である難水溶性の保護膜４を除去する。次いで、ステ
ップＳ５では、アクティブマトリクス基板２を水で洗浄
して、第１の保護膜である水溶性の保護膜３を除去し、
ステップＳ６にてアクティブマトリクス基板２を乾燥す
る。In step S4, the cut active matrix substrate 2 is washed with an organic solvent to remove the poorly water-soluble protective film 4, which is the second protective film. Next, in step S5, the active matrix substrate 2 is washed with water to remove the water-soluble protective film 3, which is the first protective film.
In step S6, the active matrix substrate 2 is dried.
【００１７】このような構成とすると、第１，第２の保
護膜にて、マザーボード１の表面を保護しているため、
アクティブマトリクス基板２の面取り、切断、分離時に
おける切屑やダストの付着がなくなる。また、第２の保
護膜である難水溶性の保護膜４を除去する際には、第１
の保護膜である水溶性の保護膜３がアクティブマトリク
ス基板２の表面を保護しているため、アクティブマトリ
クス基板２と溶剤との接触がなくなり、アクティブマト
リクス基板２に形成されたアルミ配線の腐食を防止でき
る。With such a configuration, since the surface of the motherboard 1 is protected by the first and second protective films,
Chips and dust do not adhere to the active matrix substrate 2 during chamfering, cutting, and separation. When removing the poorly water-soluble protective film 4 which is the second protective film, the first protective film 4 is removed.
Since the water-soluble protective film 3, which is a protective film of (1), protects the surface of the active matrix substrate 2, contact between the active matrix substrate 2 and the solvent is eliminated, and corrosion of the aluminum wiring formed on the active matrix substrate 2 is prevented. Can be prevented.
【００１８】また、第１，第２の保護膜の除去に際して
は、接着剤などによる保護膜の剥離などがないため、ア
クティブマトリクス基板２の表面に形成されたトランジ
スタの静電破壊などを防止でき、製造歩留まりを向上で
きる。また、このアクティブマトリクス基板２を例えば
液晶表示装置用の基板として使用した場合には、アクテ
ィブマトリクス基板２の表面に直接に有機溶剤が接触す
ることがないため、配向膜を形成する際においても、配
向膜材であるポリイミド等の有機高分子材料の塗布膜の
塗布ムラが発生することがない。In removing the first and second protective films, the protective film is not peeled off by an adhesive or the like, so that the transistor formed on the surface of the active matrix substrate 2 can be prevented from being electrostatically damaged. Thus, the production yield can be improved. Further, when the active matrix substrate 2 is used as a substrate for a liquid crystal display device, for example, the organic solvent does not come into direct contact with the surface of the active matrix substrate 2. The coating film of an organic polymer material such as polyimide which is an alignment film material does not have coating unevenness.
【００１９】従って、表示品質の良いアクティブマトリ
クス型液晶装置が得られ、製造歩留を向上させることが
できる。以下、この（実施の形態）の具体例を示す。 実施例 プローブ検査後のマザーボード１の表面に、例えば、所
定の粘度を有するポリビニールアルコール液を、スピン
コーティングで０．５〜５μｍの膜厚に塗布する。そし
て、７０℃〜１００℃の温度で熱硬化し、第１の保護膜
である水溶性の保護膜層３を形成する。Therefore, an active matrix type liquid crystal device having good display quality can be obtained, and the production yield can be improved. Hereinafter, a specific example of this (embodiment) will be described. EXAMPLE For example, a polyvinyl alcohol liquid having a predetermined viscosity is applied to the surface of the mother board 1 after the probe inspection to a thickness of 0.5 to 5 μm by spin coating. Then, thermosetting is performed at a temperature of 70 ° C. to 100 ° C. to form a water-soluble protective film layer 3 as a first protective film.
【００２０】熱硬化の方法としては、ホットプレート方
式、オーブン方式のどちらでも良く、硬化時間は、ホッ
トプレートであれば２〜１０分、オーブン方式であれば
１０〜９０分であることが好ましい。この第１の保護膜
の上に、例えば、所定の粘度を有する環化ゴム系樹脂を
スピンコーティングで０．５〜５μｍの膜厚に塗布す
る。そして、７０℃〜１００℃の温度で熱硬化し、第２
の保護膜である難水溶性の保護膜４を形成する。The heat curing method may be either a hot plate method or an oven method, and the curing time is preferably 2 to 10 minutes for a hot plate and 10 to 90 minutes for an oven method. On this first protective film, for example, a cyclized rubber-based resin having a predetermined viscosity is applied by spin coating to a thickness of 0.5 to 5 μm. Then, it is thermally cured at a temperature of 70 ° C to 100 ° C, and the second
A poorly water-soluble protective film 4 is formed.
【００２１】熱硬化の方法としては、ホットプレート方
式、オーブン方式のどちらでも良く、硬化時間は、ホッ
トプレートであれば２〜１０分、オーブン方式であれば
１０〜９０分が好ましい。上記のように第１，第２の保
護膜が形成されたマザーボードから、ダイシングにより
アクティブマトリクス基板１を面取り、切断、分離す
る。The method of heat curing may be either a hot plate method or an oven method. The curing time is preferably 2 to 10 minutes for a hot plate and 10 to 90 minutes for an oven method. The active matrix substrate 1 is chamfered by dicing from the motherboard on which the first and second protective films are formed as described above, and cut and separated.
【００２２】次に、第１，第２の保護膜の除去工程を行
う。第２の保護膜である難水溶性の保護膜４を除去する
ために、環化ゴム系樹脂の除去溶剤として、例えば有機
溶剤であるキシレンを用いる。上記のように面取り、切
断、分離したアクティブマトリクス基板２を２５℃のキ
シレン溶液中に５〜３０分浸漬し、超音波を照射しなが
ら難水溶性の保護膜４を溶解する。Next, a step of removing the first and second protective films is performed. In order to remove the poorly water-soluble protective film 4 as the second protective film, for example, xylene as an organic solvent is used as a solvent for removing the cyclized rubber-based resin. The active matrix substrate 2 chamfered, cut and separated as described above is immersed in a xylene solution at 25 ° C. for 5 to 30 minutes, and the hardly water-soluble protective film 4 is dissolved while irradiating ultrasonic waves.
【００２３】なお、この第２の保護膜１の除去に際し、
第１の保護膜である水溶性の保護膜３を形成するポリビ
ニールアルコールは、耐油性が極めて高いためほとんど
の有機溶剤には溶解しないが、グリコール類、ＤＭＳ
Ｏ、フェノールなどの限られた有機溶剤には溶解するも
のもあるので注意が必要である。上記の保護膜の除去作
業は、２〜３回繰り返すことが好ましい。When removing the second protective film 1,
Polyvinyl alcohol forming the water-soluble protective film 3, which is the first protective film, has extremely high oil resistance and is insoluble in most organic solvents.
Care must be taken because some organic solvents such as O and phenol can be dissolved. It is preferable that the operation of removing the protective film is repeated two to three times.
【００２４】次に、抵抗率が２５℃時に１６ＭΩ・ｃｍ
以上の純水中に、アクティブマトリクス基板２を５〜３
０分浸漬し、超音波を照射しながら第１の保護膜である
水溶性の保護膜３を溶解、除去する。この時、純水の温
度は２５℃程度でもかまわないが、９５℃以下の高温の
ほうが溶解しやすい。上記の保護膜の除去作業は、２〜
３回繰り返すことが好ましい。Next, the resistivity is 16 MΩ · cm at 25 ° C.
In the above pure water, the active matrix substrate 2 is
The substrate is immersed for 0 minutes, and the water-soluble protective film 3 as the first protective film is dissolved and removed while irradiating ultrasonic waves. At this time, the temperature of the pure water may be about 25 ° C., but a high temperature of 95 ° C. or less is easier to dissolve. The above-mentioned work of removing the protective film is performed in two steps.
Preferably, it is repeated three times.
【００２５】この洗浄工程では、抵抗率が２５℃時に１
６ＭΩ・ｃｍ以上の純水を用いているため、アクティブ
マトリクス基板２の洗浄効果も有する。最後に分離され
たアクティブマトリクス基板１の乾燥を行う。このアク
ティブマトリクス基板１の面取り、切断、分離および第
１，第２の保護膜を完全に除去した後、アクティブマト
リクス型液晶表示装置の組立工程が行われる。In this cleaning step, the resistivity is 1 at 25 ° C.
Since pure water of 6 MΩ · cm or more is used, the active matrix substrate 2 also has a cleaning effect. Finally, the separated active matrix substrate 1 is dried. After chamfering, cutting and separating the active matrix substrate 1 and completely removing the first and second protective films, an assembling process of the active matrix type liquid crystal display device is performed.
【００２６】なお、上記実施の形態では、基板２として
液晶表示装置に用いるアクティブマトリクス基板２を例
に挙げて説明したが、液晶表示装置において、透過型の
液晶表示装置に用いるマザーボード１としては、米国コ
ーニング社製の品番７０５９などの無アルカリガラス基
板や石英ウエハ等の透明な絶縁体が用いられ、反射型の
液晶表示装置に用いるマザーボード１には半導体ウエハ
が用いられる。In the above embodiment, the active matrix substrate 2 used for the liquid crystal display device has been described as an example of the substrate 2. However, in the liquid crystal display device, the mother board 1 used for the transmission type liquid crystal display device is as follows. A transparent insulator such as a non-alkali glass substrate such as 7059 manufactured by Corning Incorporated in the United States or a quartz wafer is used, and a semiconductor wafer is used for the motherboard 1 used in the reflective liquid crystal display device.
【００２７】また、上記実施の形態では、基板２として
液晶表示装置に用いるアクティブマトリクス基板２を例
に挙げて説明したが、本発明はこれに限定されるもので
はなく、ＣＣＤ撮像素子等の半導体チップの場合には、
マザーボード１が半導体ウエハであり、基板２が半導体
チップである場合も同様の効果が得られる。また、上記
説明では、第１，第２の保護膜をそれぞれ一層ずつ形成
したが、本発明はこれに限定されるものではなく、マザ
ーボードの表面に水溶性の保護膜、難水溶性の保護膜の
順で保護膜が形成されていれば、それぞれの保護膜が２
層以上形成されていてもよい。Further, in the above embodiment, the active matrix substrate 2 used for the liquid crystal display device has been described as an example of the substrate 2, but the present invention is not limited to this. For chips,
Similar effects can be obtained when the motherboard 1 is a semiconductor wafer and the substrate 2 is a semiconductor chip. In the above description, the first and second protective films are formed one by one. However, the present invention is not limited to this, and a water-soluble protective film and a hardly water-soluble protective film are formed on the surface of the motherboard. If the protective films are formed in the order of
More than one layer may be formed.
【００２８】[0028]
【発明の効果】以上のように本発明の基板の製造方法に
よると、マザーボードの表面に水溶性の第１の保護膜を
形成し、次いで前記水溶性の第１の保護膜の上に難水溶
性の第２の保護膜を形成し、前記第１，第２の保護膜が
形成されたマザーボードを切断して複数の基板を切り出
し、前記切断された基板を溶剤にて洗浄して前記第２の
保護膜を除去し、次いで水にて洗浄して第１の保護膜を
除去することで、面取り、切断、分離時における切り屑
やダストの付着のない基板が得られる。As described above, according to the substrate manufacturing method of the present invention, a water-soluble first protective film is formed on the surface of a motherboard, and then a poorly water-soluble first protective film is formed on the water-soluble first protective film. Forming a second protective film, cutting the motherboard on which the first and second protective films are formed to cut out a plurality of substrates, washing the cut substrate with a solvent, and removing the second substrate. By removing the first protective film by washing with water and then removing the first protective film, a substrate free of chips and dust during chamfering, cutting and separation can be obtained.
【００２９】また、上記のように性質の異なった第１，
第２の保護膜が形成されることで、有機溶剤が直接に基
板の表面に接触することがなくなるため、例えば絶縁体
基板あるいは半導体基板の上にマトリクス状に薄膜トラ
ンジスタまたはＭＯＳトランジスタを設けたアクティブ
マトリクス基板においても、基板に形成されたアルミ配
線が腐食されることがなくなる。また、前記アクティブ
マトリクス基板を液晶表示装置に使用する場合には、基
板への有機溶剤の付着をなくすことができるため、配向
膜の形成工程における配向膜の塗布ムラを解消でき、表
示品質の良い液晶表示装置が実現できる。Further, as described above, the first and second materials having different properties are used.
The formation of the second protective film prevents the organic solvent from directly contacting the surface of the substrate. For example, an active matrix in which thin film transistors or MOS transistors are provided in a matrix on an insulating substrate or a semiconductor substrate Also on the substrate, the aluminum wiring formed on the substrate is not corroded. Further, when the active matrix substrate is used for a liquid crystal display device, the organic solvent can be prevented from adhering to the substrate, so that uneven coating of the alignment film in the alignment film forming step can be eliminated, and the display quality is good. A liquid crystal display device can be realized.
【００３０】さらに、基板に形成されたトランジスタの
静電破壊を防止でき、液晶表示装置を製造する際の歩留
まりを向上することができる。Further, it is possible to prevent electrostatic breakdown of the transistor formed on the substrate, and to improve the yield in manufacturing a liquid crystal display device.
【図１】本発明の実施の形態におけるマザーボードの断
面図FIG. 1 is a sectional view of a motherboard according to an embodiment of the present invention.
【図２】本発明の実施の形態における基板の製造工程を
示すフローチャート図FIG. 2 is a flowchart showing a substrate manufacturing process according to the embodiment of the present invention.
【図３】従来のマザーボードの平面図FIG. 3 is a plan view of a conventional motherboard.
【図４】従来のマザーボードの断面図FIG. 4 is a cross-sectional view of a conventional motherboard.
【図５】従来のマザーボードのダイシング工程を示す模
式図FIG. 5 is a schematic view showing a conventional motherboard dicing process.
１ マザーボード ２ アクティブマトリクス基板 ３ 水溶性の保護膜 ４ 難水溶性の保護膜 Reference Signs List 1 motherboard 2 active matrix substrate 3 water-soluble protective film 4 hardly water-soluble protective film
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2H088 FA07 FA21 FA26 HA01 HA08 MA20 2H090 HB04X HB13X JB02 JC19 LA04 5C094 AA31 AA43 BA02 BA43 CA19 DA15 EB05 FB01 FB14 GB01 HA10 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H088 FA07 FA21 FA26 HA01 HA08 MA20 2H090 HB04X HB13X JB02 JC19 LA04 5C094 AA31 AA43 BA02 BA43 CA19 DA15 EB05 FB01 FB14 GB01 HA10
Claims (5)
し、前記マザーボードより基板を切り出すに際し、 前記マザーボードの表面に水溶性の第１の保護膜を形成
し、次いで前記水溶性の第１の保護膜の上に難水溶性の
第２の保護膜を形成し、 前記第１，第２の保護膜が形成されたマザーボードを切
断して複数の基板を切り出し、 前記切断された基板を溶剤にて洗浄して前記第２の保護
膜を除去し、次いで水にて洗浄して第１の保護膜を除去
する基板の製造方法。1. A plurality of substrates are chamfered on a motherboard, and a water-soluble first protective film is formed on a surface of the motherboard when cutting the substrates from the motherboard, and then the first water-soluble protective film is formed. A second protective film having poor water solubility on the substrate, cutting the motherboard on which the first and second protective films are formed to cut out a plurality of substrates, and cleaning the cut substrates with a solvent. And removing the second protective film, followed by washing with water to remove the first protective film.
トリクス基板である請求項１記載の基板の製造方法。2. The method according to claim 1, wherein the substrate is an active matrix substrate used for a liquid crystal display device.
は半導体チップである請求項１記載の基板の製造方法。3. The method according to claim 1, wherein the motherboard is a semiconductor wafer, and the substrate is a semiconductor chip.
板である請求項３記載の基板の製造方法。4. The method according to claim 3, wherein the semiconductor chip is a substrate used for a CCD imaging device.
系樹脂、ポリビニルピロリドン系樹脂を用い、 第２の保護膜として環化ゴム系樹脂、ノボラック系樹
脂、ヒドロキシレン系樹脂、多価アクリレート系樹脂を
用いる請求項１記載の基板の製造方法。5. A polyvinyl alcohol-based resin or polyvinylpyrrolidone-based resin is used as the first protective film, and a cyclized rubber-based resin, a novolak-based resin, a hydroxylene-based resin, or a polyvalent acrylate-based resin is used as the second protective film. The method for manufacturing a substrate according to claim 1, which is used.
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| JP28089599A JP4318353B2 (en) | 1999-10-01 | 1999-10-01 | Substrate manufacturing method |
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|---|---|---|---|
| JP28089599A JP4318353B2 (en) | 1999-10-01 | 1999-10-01 | Substrate manufacturing method |
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| JP2001102330A true JP2001102330A (en) | 2001-04-13 |
| JP4318353B2 JP4318353B2 (en) | 2009-08-19 |
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| JP28089599A Expired - Fee Related JP4318353B2 (en) | 1999-10-01 | 1999-10-01 | Substrate manufacturing method |
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