JP2001091942A - Liquid crystal device and production of liquid crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide techniques for the production of a liquid crystal device having a reflection electrode consisting of a soft metal thin film such as aluminum, in which the metal thin film is not damaged but has similar handling property to a transparent conductive material in a production method thereof, and reliability of a wiring part or fabrication structure can be improved, and moreover, the technique which can suppress complication of the production process. SOLUTION: A photosensitive resist is applied on the surface of a transparent conductive layer 3, exposed through a specified mask pattern and developed to form a resist layer 4. The transparent conductive layer 3 is patterned by using the resist layer 4 as a mask pattern. Then the resist layer 4 is peeled while a reflection layer 2 is patterned by wet etching using an alkali solution such as 4 to 5% concentration potassium hydroxide aqueous solution. In this step, the reflection layer 2 is etched through the transparent conductive layer 3 as a mask which is already patterned and has etching selectivity.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal device and a method of manufacturing the liquid crystal device, and more particularly to a manufacturing technique suitable for forming a liquid crystal device having a reflective electrode made of a metal thin film.

[0002]

2. Description of the Related Art Generally, in a reflection type or semi-transmission type liquid crystal device, a liquid crystal is sealed between two substrates.
A liquid crystal panel includes a reflective electrode made of a metal thin film on a surface of one substrate facing the other substrate, and a transparent electrode facing the reflective electrode on the surface of the other substrate. When external light enters the liquid crystal panel, the light that has passed through the liquid crystal layer is reflected by the reflective electrode, passes through the liquid crystal layer again, and is visually recognized.

As the reflection electrode, an electrode made of an aluminum thin film is most generally used. In addition, an alloy obtained by adding titanium oxide, zirconium oxide, or the like to aluminum may be used in order to increase the reflectance.

[0004]

However, in the above-mentioned conventional liquid crystal device, the aluminum thin film forming the reflection electrode and the wiring on one substrate surface is soft and easily damaged, and the surface is easily oxidized by 55 to 60 degrees. It has the drawbacks that it is soluble in moderately warm water and that it is susceptible to electrolytic corrosion (corrosion). It is made of ITO (indium tin oxide), which is formed in a conventional transmission type liquid crystal panel, and is hard and has high chemical resistance. There is a problem that handling is extremely difficult as compared with a transparent conductor.

It is also conceivable to form a protective film made of an inorganic insulator or the like on the reflective electrode and the wiring. However, if the wiring is completely covered with the protective film, the integrated circuit chip is not covered by the wiring. Before the mounting of wiring or wiring members, a step of removing this protective film is required separately.On the other hand, if the protective film is formed from the beginning avoiding the mounting part of the wiring, a patterning step of the protective film is required In addition, since the mounting portion of the wiring cannot be protected, there is a problem that damage to the wiring and the like cannot be avoided, and the electrical reliability of the wiring portion is impaired.

Further, when a wiring made of aluminum is formed, the surface of the wiring may be easily oxidized or damaged as described above. For example, the wiring is anisotropic with respect to an external terminal formed at the tip of the wiring. When an integrated circuit chip such as a driver IC or a wiring member such as a flexible wiring board is thermocompression-bonded via a conductive film (ACF), the adhesiveness between the external connection terminal portion and the anisotropic conductive film is poor, so that the mounting structure has There is also a problem of poor reliability.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a liquid crystal device having a reflective electrode made of a soft metal thin film of aluminum or the like without damaging the metal thin film and at the same time being transparent. An object of the present invention is to provide a liquid crystal device which has the same handling properties as a method for manufacturing a conductor and can improve the reliability of a wiring portion and a mounting structure. It is still another object of the present invention to provide a liquid crystal device manufacturing technique capable of suppressing the complexity of the manufacturing process.

[0008]

In order to solve the above-mentioned problems, a liquid crystal device according to the present invention has a first substrate provided with a reflective electrode on a surface thereof, and a transparent second substrate opposed to the first substrate. And
A liquid crystal device comprising a liquid crystal sandwiched between the first substrate and the second substrate, wherein the reflective electrode includes a reflective layer made of a metal material and a transparent conductive material directly adhered on the reflective layer. And a layer.

According to the present invention, since the reflective electrode is formed in a laminated structure in which the transparent conductive material is applied on the reflective layer made of a metal material, the reflective layer is protected by the coating with the transparent conductive material. Therefore, the surface of the reflective layer is not oxidized or damaged during the manufacturing process, and the initially formed surface state of the reflective layer is maintained, so that a reflective electrode having high-quality optical characteristics is used. Can be configured.

[0010] The semiconductor device may further include a wiring that is conductively connected to the reflection electrode and constitutes an external terminal portion at a tip of the reflection electrode. The external terminal portion is provided on the reflection layer made of the metal material and on the reflection layer. It is preferred to have the transparent conductive layer directly applied.

According to the present invention, since the wiring is also formed in the above-mentioned laminated structure, it is possible to prevent the surface of the wiring from being oxidized or damaged during the manufacturing process, and particularly to cover the wiring with a protective film or an alignment film. However, surface oxidation, damage, elution at the time of cleaning, etc. can be prevented even at the wiring portion formed at the exposed external connection portion, so that the handling property in the manufacturing process is significantly improved, and the electrical connection of the external connection portion is improved. Reliability can be improved.

Next, the method for manufacturing a liquid crystal device according to the present invention comprises the steps of: forming a reflective electrode formed by laminating a reflective layer made of a metal material on the surface and a transparent electrode layer made of a transparent conductive material formed on the reflective layer; A method for manufacturing a liquid crystal device, comprising: a first substrate provided; and a transparent second substrate facing the first substrate, wherein a liquid crystal is sandwiched between the first substrate and the second substrate. hand,
A mask pattern is formed on the surface of the first substrate, the transparent conductive material is selectively removed using the mask pattern, and then the metal is formed using the mask pattern or the patterned transparent conductive material. A patterning step of selectively removing a material; According to the present invention, the laminated structure of the metal material and the transparent conductive material can be patterned in one patterning step (for example, one photolithography step), so that an increase in the number of manufacturing steps can be suppressed. here,
Either the removal of the mask pattern or the selective removal of the metal material may be performed first. As a case of removing the mask pattern first, the metal material may be selectively removed using the already patterned transparent conductive material as a mask, and conversely, the selective removal of the metal material is performed first by the mask pattern, After that, the mask pattern may be removed. Further, as described in claim 4, the removal of the mask pattern and the selective removal of the metal material may be performed simultaneously (in the same etching step).

Next, still another method of manufacturing a liquid crystal device according to the present invention comprises laminating a reflective layer made of a metal material on the surface and a transparent electrode layer made of a transparent conductive material formed on the reflective layer. Manufacturing of a liquid crystal device having a first substrate provided with a reflective electrode, and a transparent second substrate facing the first substrate, wherein a liquid crystal is sandwiched between the first substrate and the second substrate. A method of sequentially depositing the metal material and the transparent conductive material on a surface of the first substrate, forming a mask pattern on a surface of the transparent conductive material, and using the mask pattern to form the transparent conductive material. And then selectively removing the metal material by the method using the already patterned transparent conductive material at the same time as removing the mask pattern. According to the present invention, since the removal of the mask pattern and the selective removal of the metal material are performed at the same time at the same time, the number of removal steps can be reduced, so that the manufacturing cost can be further reduced. In particular, since a metal material and a transparent conductive material generally differ greatly in chemical resistance, it is extremely difficult to pattern them all at once by the same method. However, as in the present invention, the mask pattern and the metal material are formed by the same method. It is easy to select a method (chemicals etc.) for removing at once.

In the present invention, it is necessary to use a mask pattern which can remove a metal material and which can be removed by a method having sufficient selectivity to a transparent conductive material such as ITO. There is.

In the present invention, it is preferable that in the patterning step, a wiring having the same laminated structure as the reflective electrode is patterned simultaneously with the reflective electrode.

In the present invention, the metal material is preferably aluminum or an alloy mainly containing aluminum, and the transparent conductive material is preferably indium tin oxide or tin oxide.

According to the present invention, aluminum or an alloy mainly composed of aluminum is easily oxidized, soft, and easily eluted with warm water, whereas indium tin oxide and tin oxide are metal oxides or inorganic oxides. Therefore, the metal material is hardly oxidized, hard, and is not affected by warm water. Therefore, the handleability during the manufacturing process is improved by coating the metal material with the transparent conductive material. Also,
Since the above-mentioned indium tin oxide and tin oxide also have better adhesiveness to anisotropic conductive films than aluminum, it is possible to improve the electrical reliability of a mounting portion for an integrated circuit chip or a wiring member.

In the present invention, the removal of the mask pattern and the selective removal of the metal material are preferably performed simultaneously by wet etching using an alkaline solution.

According to the present invention, a mask pattern formed using many photosensitive resists can be easily peeled off with an alkaline solution, and a metal material mainly composed of aluminum can be dissolved in the alkaline solution. Therefore, a material for forming a mask pattern by a photolithography method or the like can be easily selected. Further, since the removal of the mask pattern and the selective removal of the metal material can be performed at the same time, the manufacturing cost can be reduced.

In the present invention, it is preferable that the mask pattern is formed of a photosensitive resist.

According to the present invention, patterning can be easily performed by forming a mask pattern by a photolithography method.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an embodiment of a method for manufacturing a liquid crystal device according to the present invention will be described in detail with reference to the accompanying drawings.

[Example of Step of Forming Reflective Electrode] FIGS. 1A to 1E are schematic process explanatory views showing the outline of the manufacturing method of this embodiment. As shown in FIG. 1A, a reflective layer 2 made of an aluminum thin film is entirely formed on a surface of a substrate 1 made of glass or the like by a sputtering method or an evaporation method. The reflection layer 2 is, for example, 200 to
It is formed to a thickness of about 300 angstroms. Next, as shown in FIG. 1B, a transparent conductive layer 3 made of ITO (indium tin oxide) is entirely formed on the surface of the reflective layer 2 by a sputtering method or the like. The thickness of the transparent conductive layer 3 is appropriately designed so as to obtain the necessary resistivity as an electrode and a wiring.
It is about 00 to 3000 angstroms.

Next, a photosensitive resist is applied on the surface of the transparent conductive layer 3, exposed by a predetermined mask pattern, and developed to form a resist having a predetermined pattern as shown in FIG. The layer 4 is formed. The development is performed with an alkaline solution, for example, a 1% aqueous solution of potassium hydroxide. As the photosensitive resist, for example, a positive resist made of a novolak resin can be used. Then, using the resist layer 4 as a mask pattern, the transparent conductive layer 3 is patterned as shown in FIG. This patterning can be performed, for example, by wet etching using an aqueous solution containing ferric chloride and hydrochloric acid.

Next, an alkaline solution, for example, having a concentration of 4 to 5
As shown in FIG. 1E, the reflection layer 2 is patterned while the resist layer 4 is peeled off by wet etching using an aqueous solution of potassium hydroxide. At this time, the reflective layer 2 is etched using the already patterned transparent conductive layer 3 having sufficient etching selectivity as a mask. In this manner, on the substrate 1, the reflective electrode constituted by the laminated structure of the reflective layer 2 composed of the aluminum thin film and the transparent conductive layer 3 composed of ITO directly laminated on the reflective layer 2 is provided. Wiring is formed.

In the above method, the peeling of the resist layer 4 and the etching of the reflective layer 2 are simultaneously performed with the same etching solution. However, the peeling of the resist layer 4 and the selective removal of the reflective layer 2 are performed. You may carry out by a different method. For example, the resist layer 4 may be stripped with an alkaline solution, and then the reflective layer 2 may be etched with hydrochloric acid or the like using the already patterned transparent conductive layer 3 as a mask. Conversely, the reflection layer 2 is formed using the resist layer 4 as a mask.
May be etched with hydrochloric acid or the like, and then the resist layer 4 may be stripped with an alkaline solution. Even in this case,
Although the number of etching steps is increased by one, processing can be performed by a single patterning step using only the resist layer 4 as a mask pattern.

[Outline of Method of Manufacturing Liquid Crystal Device] Next, an outline of a method of manufacturing a liquid crystal device using the embodiment of the above-described reflective electrode forming step will be described. FIG. 2 is a plan view (a) of the first mother substrate 11 and a plan view (b) of the second mother substrate used in the manufacturing method of the present embodiment. FIG. 3A is a schematic cross-sectional view schematically showing a schematic structure of the liquid crystal panel 100 formed according to the present embodiment. FIG. It is a top view shown centering on it.

As shown in FIG. 2A, the first mother substrate 11
In the same manner as described above, aluminum and ITO are sequentially deposited and then patterned by photolithography, so that a plurality of reflective electrodes 13, wirings 14, and connection terminals 15
0 is formed. When an alignment mark 11a for alignment is formed on the surface of the first mother substrate 11, as shown in FIG. 2A, the reflective electrode 13, the wiring 14, and the connection terminal 150 are made of the same material at the same time. It is preferable that it is formed. Here, the reflection electrode 13 is shown in FIG.
As shown in (a), a reflective layer 1 similar to the reflective layer 2 described above.
31 and a transparent electrode layer 132 similar to the transparent conductive layer 3 described above.
Are formed. The wiring 14 has a laminated structure of a metal wiring layer 141 similar to the reflective layer 2 and a transparent wiring layer 142 similar to the transparent conductive layer 3. Further, the connection terminal 150 is connected to the reflection layer 2.
And a transparent terminal layer 152 similar to the transparent conductive layer 3 described above.

As shown in FIG. 2A, the plurality of reflective electrodes 13 are arranged in the liquid crystal encapsulation area 1 of each panel area 11x.
Formed in 1A. Although not shown, each of the reflection electrodes 13 has a stripe shape and is formed to be parallel to each other. The plurality of wirings 14 are arranged in each panel scheduled area 11x.
Is formed so as to be drawn out from the expected liquid crystal enclosing area 11A to the projected area 11B. The plurality of connection terminals 150 are formed so as to be arranged in parallel with the projected area 11B.

Next, the reflection electrode 13 in the liquid crystal enclosure region 11A
In addition, a protective film 15 made of a hard inorganic insulator such as SiO ₂ or TiO _{2 is} formed on a part of the wiring 14 by applying a silica slurry liquid by, for example, flexographic printing or the like and baking it. The protective film 15 is also called a top coat film. In a liquid crystal panel structure described later, short-circuit failure between electrodes due to dust being mixed between the transparent electrode and the reflective electrode, and elution of impurities from the substrate to the liquid crystal layer. It is for preventing. The protective film 15 only needs to be formed in a pattern that does not cover at least the external terminal portion 11C shown in FIG. 3 in the projected area 11B, and as shown in FIG. It may be formed so as to integrally cover a plurality of adjacent liquid crystal encapsulation scheduled areas 11A.

Next, an alignment film 16 is formed so as to cover the protective film 15 and a part of the wiring 14. Alignment film 16
Is formed by printing a polyimide resin by a flexographic printing method or the like and baking it. The alignment film 16
Basically, the external terminal portion 1 shown in FIG.
It is formed so as not to cover 1C. For example, FIG.
As shown in (a), it may be formed so as to integrally cover a plurality of scheduled panel regions 11x adjacent in the vertical direction in the figure. The alignment film 16 is formed so as to cover the protective film 15 described above, particularly, to completely cover the outer edge of the protective film 15 with the alignment film 16, thereby reducing rubbing unevenness during rubbing. Preferred above.

Next, a rubbing cloth provided with bristles having an appropriate length densely attached to the surface is attached to the peripheral surface of the roller to form a rubbing roller, and the rubbing roller is rotated to rub the substrate surface. While moving, the alignment film 16 is subjected to a rubbing process. At this time, a part of the wiring 14 which is not covered with the protective film 15 and the alignment film 16 is directly in contact with the rubbing roller and is rubbed, but the surface of the wiring 14 is a transparent wiring having higher hardness than aluminum. Since the metal wiring layer 141 is completely covered by the layer 142, the metal wiring layer 141 is not damaged by rubbing.

On the other hand, also in the first mother substrate 12 shown in FIG. 2B, a plurality of liquid crystal encapsulation areas 12A corresponding to the liquid crystal encapsulation areas 11A are set. Numerous transparent electrodes 17 composed of a transparent conductor made of (indium tin oxide) or the like
Is formed. The transparent electrodes 17 are each formed in a stripe shape, and are patterned in respective regions in a state where they are arranged in parallel with each other. Further, an alignment film 18 similar to the above is formed on the transparent electrode 17, and a rubbing process is performed as described above.

On the first mother substrate 11 formed as described above, as shown in FIG. 2A, a sealing material 19 is formed so as to surround each liquid crystal enclosing area 11A. Each sealing material 19 thus formed has a liquid crystal sealing opening 19a. The first mother substrate 11 includes a sealing material 19
Is adhered to the second motherboard 12 through the substrate. Then, the bonding state is a predetermined gap between the substrates (for example, 5 to 5).
(Approximately 10 μm), and in this state, the sealing material 19 is cured by heating or light irradiation. Thus, a mother panel is formed.

Next, the mother panel is cut into strips (scribe-break) to form strip-shaped panels. With this strip-shaped panel, the liquid crystal injection port 19a of the sealing material 19 shown in FIG. 2A is exposed, so that liquid crystal is injected from the liquid crystal injection port 19a. As is known, the liquid crystal injection port 19a is closed by the liquid crystal by immersing the liquid crystal injection port 19a in the liquid crystal under reduced pressure or by dropping the liquid crystal into the liquid crystal injection port 19a as is known. This is performed by increasing the ambient pressure toward the atmospheric pressure, and causing the liquid crystal to enter the panel by a pressure difference between the inside and outside. When the liquid crystal injection is completed, the liquid crystal injection port 19a is sealed with a sealing resin, and the liquid crystal is sealed with the sealing material 19.
Trap inside.

Next, with respect to the above-mentioned strip-shaped panel,
A portion of the mother substrate 12 is cut and removed, and the first mother substrate 11 is formed so as to protrude the overhang region 11B ', which was the overhang region 11B. Further, the strip-shaped panel is cut into each of the liquid crystal encapsulation planned areas 11A and 12A, and separated into individual liquid crystal panels 100. In this state, as shown in FIG. 3A showing a cross section of the liquid crystal panel 100, a substrate 110 which is a part of the first mother substrate 11 is provided.
Of the substrate 120, which is a part of the second motherboard 12, extends outside the outer edge of the substrate 120 to form an overhang region 11B '. The plurality of wirings 14 are drawn out on the surface of the overhang region 11B 'as described above.

Further, as shown in FIG.
In the liquid crystal enclosing area 11A '(corresponding to the above-described liquid crystal encapsulating area 11A) where the substrate 0 and the substrate 120 are bonded to each other, a lead-out wiring 14a made of aluminum conductively connected to the reflective electrode 13 is provided. 11B 'has been drawn up.

On the outside of the sealing material 19 disposed between the substrate 110 and the substrate 120, conductive particles (for example, a plating process is performed on the surface of a resin ball) in the same resin material as the sealing material 19. ) Are arranged. The vertical conductive member 21 is formed of the first motherboard 1
The first and second mother substrates 12 are anisotropic conductors that are configured to exhibit conductivity only in the cell thickness direction (substrate thickness direction) by the conductive particles when pressed and pressed. .

At the portion where the upper / lower conductive material 21 comes into contact with the substrate 110, the base end of the connecting wiring 14b formed with the reflective electrode 13 and having a laminated structure of aluminum and ITO is formed. The connection wiring 14b extends from the base end contacting the vertical conductive material 21 to reach the external connection portion 11C on the overhang region 11B '. On the other hand, a wiring 17 a made of a transparent conductor integrally formed with the transparent electrode 17 is provided at a portion where the vertical conductive material 21 contacts the substrate 120.
Is formed. As a result, the transparent electrode 17 formed on the surface of the substrate 120 and the connection wiring 14b on the overhang region 11B 'are conductively connected via the vertical conductive material 21.

Note that, unlike the present embodiment, the sealing material 1
By dispersing conductive particles in 9 itself and forming it as an anisotropic conductor, it is also possible to make the above-mentioned vertical conducting material 21 unnecessary. That is, a part of the sealing material 19 serves as the above-mentioned vertical conductive material 21.

When the liquid crystal panel 100 is completed as described above, the entire liquid crystal panel 100 is washed with pure water or the like, and as shown in FIG. 4, an anisotropic conductive film 22 is attached to the external connection portion 11C. While the integrated circuit chip 23 such as a driver IC is pressed onto the anisotropic conductive film 22, thermocompression bonding is performed. The anisotropic conductive film 22 is a film in which conductive particles (for example, a resin ball whose surface is plated) are dispersed in a resin such as a thermoplastic resin, and the resin is softened by thermocompression bonding. As a result, the conductive pads 23a of the integrated circuit chip 23 and the external terminals formed at the tips of the wirings 14 are brought into conduction by the conductive particles.
A wiring member 24 such as a flexible wiring board is also thermocompression-bonded on the anisotropic conductive film 22 so that the wiring member 24
Of the wiring 24a and the connection terminal 150 are conductively connected via conductive particles.

As described above, in the present embodiment, the reflective electrode 13, the wiring 14, and the connection terminal 150 are formed in a laminated structure of the first layer made of aluminum and the second layer made of ITO directly formed thereon. Since the first layer of aluminum is covered with the second layer of ITO, it is possible to prevent oxidation or damage to the surface of aluminum or dissolution by hot water.

In particular, immediately after the reflection layer 131 corresponding to the reflection layer 2 shown in FIG. 1 is formed, the transparent electrode layer 132 corresponding to the transparent conductive layer 3 shown in FIG. 1 is immediately formed, and the reflection layer 131 has high hardness. By being covered with the transparent electrode layer 132 which is a metal oxide (inorganic oxide), the reflection layer 13
Oxidation and damage during the manufacturing process of one surface can be avoided, and the initial state of the formation of the reflective layer 131 can be maintained.
Optical characteristics such as reflectance can be formed with high quality. Note that by forming a fine uneven structure on the surface of the reflective layer 131, it is possible to prevent the background from being reflected or dazzled by direct reflected light, or to prevent a decrease in contrast. Can be protected by the transparent electrode layer 132.

Further, since the reflective electrode 13, the wiring 14, and the connection terminal 150 are formed by the laminated structure of the first layer made of a metal and the second layer made of a transparent conductor as described above, the electrode, The conductivity required for wiring, terminals, and the like can be set without being restricted by the individual thickness of the first layer or the second layer. For example, the transparent electrode layer 13
2. Regarding the transparent wiring layer 142 and the transparent terminal layer 152, since a good conductor, aluminum, is formed in the lower layer, the thickness for securing the necessary conductivity is smaller than that of the related art.

Further, once the reflective electrode 13, the wiring 14, and the connection terminal 150 are formed, the conventional technique for manufacturing a liquid crystal device using only a transparent conductor can be applied as it is. This is extremely advantageous in process control. In particular, the conventional manufacturing technology is configured on the premise of the hardness and chemical resistance of the transparent conductor, so when processing in the state where aluminum is exposed, it is easily oxidized, soft, and chemically resistant. Completely different conditions must be set for inferior aluminum.

In this embodiment, first, aluminum and I
The reflective layer 2 and the transparent conductive layer 3 are formed by laminating the TO, then the resist layer 4 is formed on the laminated structure, and then only the transparent conductive layer 3 is removed and patterned. And the reflective layer 2 are removed at the same time, so that the patterned transparent conductive layer 3 is used as a mask for patterning. Therefore, the patterning of the reflective layer 2 and the transparent conductive layer 3 can be completed in a single photolithography step and two etching steps, so that an increase in the number of manufacturing steps can be suppressed. In particular, since the reflective layer 2, which is a metal thin film, and the transparent conductive layer 3, which is an inorganic oxide, have greatly different properties with respect to chemicals, usually a separate patterning step is required. Processing can be completed.

The method of manufacturing the liquid crystal device according to the present invention is not limited to the illustrated example described above, but various changes can be made without departing from the scope of the present invention.

[0048]

As described above, according to the present invention,
Since the reflective electrode is formed in a laminated structure in which a transparent conductive material is applied on the reflective layer made of a metal material, the reflective layer is protected by coating with the transparent conductive material. The surface of the reflective layer is not oxidized or damaged, and the surface state of the reflective layer originally formed is maintained, so that a reflective electrode having high-quality optical characteristics can be formed. In addition, since the wiring is also formed in the laminated structure, it is possible to prevent surface oxidation and damage of the wiring during the manufacturing process, and
In particular, surface oxidation, damage, elution at the time of cleaning, etc. can be prevented even at the wiring portion formed at the exposed external connection portion without being covered by the protective film or the alignment film, so that the handleability in the manufacturing process is remarkable. The electrical reliability of the wiring portion and the external connection portion can be improved.

[Brief description of the drawings]

FIGS. 1A to 1E are process explanatory views schematically showing a process of forming a reflective electrode in an embodiment of a method for manufacturing a liquid crystal device according to the present invention.

FIGS. 2A and 2B are a plan view showing a surface structure of a first motherboard and a plan view showing a surface structure of a second motherboard in the same embodiment. FIGS.

FIG. 3 is a schematic longitudinal sectional view (a) showing a structure of a liquid crystal panel formed by the same embodiment, and an enlarged partial plan view (b) showing a projection region as a center.

4A is a schematic longitudinal sectional view showing a state in which an integrated circuit chip and a wiring member are mounted on the liquid crystal panel shown in FIG. 3, and FIG. 4B is an enlarged partial plan view mainly showing an overhang region.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Reflective layer 3 Transparent conductive layer 4 Resist layer 11 1st motherboard 12 2nd motherboard 13 Reflective electrode 131 Reflective layer 132 Transparent electrode layer 14 Wiring 141 Metal wiring layer 142 Transparent wiring layer 15 Protective film 16 Alignment film 17 Transparent Electrode 18 Alignment film

Claims (8)

[Claims] A first substrate having a reflective electrode on a surface thereof; and a transparent second substrate facing the first substrate,
A liquid crystal device having a liquid crystal sandwiched between a substrate and the second substrate, wherein the reflective electrode includes a reflective layer made of a metal material and a transparent conductive layer directly adhered on the reflective layer. A liquid crystal device comprising: 2. The reflection terminal according to claim 1, further comprising a wiring that is conductively connected to the reflection electrode, and that has a wire that constitutes an external terminal at the tip thereof. A liquid crystal device comprising: the transparent conductive layer directly applied on a reflective layer. 3. A first substrate provided with a reflective electrode formed by laminating a reflective layer made of a metal material on the surface and a transparent electrode layer made of a transparent conductive material formed on the reflective layer, and the first substrate. A method for manufacturing a liquid crystal device, comprising: a transparent second substrate facing the first substrate; and a liquid crystal interposed between the first substrate and the second substrate, wherein a mask pattern is formed on a surface of the first substrate. A patterning step of selectively removing the transparent conductive material using the mask pattern, and then selectively removing the metal material using the mask pattern or the patterned transparent conductive material. A method for manufacturing a liquid crystal device, comprising: 4. A first substrate having a reflective electrode formed by laminating a reflective layer made of a metal material on the surface and a transparent electrode layer made of a transparent conductive material formed on the reflective layer, and the first substrate. A method for manufacturing a liquid crystal device, comprising: a transparent second substrate facing the first substrate, wherein a liquid crystal is sandwiched between the first substrate and the second substrate. A metal material and the transparent conductive material are sequentially deposited, a mask pattern is formed on the surface of the transparent conductive material, and the transparent conductive material is selectively removed using the mask pattern. And a patterning step of selectively removing the metal material by the method using the already patterned transparent conductive material at the same time as removing the metal material. 5. The method for manufacturing a liquid crystal device according to claim 3, wherein in the patterning step, wiring of the same laminated structure as the reflective electrode is patterned simultaneously with the reflective electrode. 6. One of claims 3 to 5
3. The method for manufacturing a liquid crystal device according to item 1, wherein the metal material is aluminum or an alloy mainly containing aluminum, and the transparent conductive material is indium tin oxide or tin oxide. 7. The method according to claim 6, wherein the removal of the mask pattern and the selective removal of the metal material are performed simultaneously by wet etching using an alkaline solution. 8. The method according to claim 6, wherein the mask pattern is formed of a photosensitive resist.