JP2001085711A - Thin film solar battery module and its manufacturing method - Google Patents

Thin film solar battery module and its manufacturing method

Info

Publication number
JP2001085711A
JP2001085711A JP26326399A JP26326399A JP2001085711A JP 2001085711 A JP2001085711 A JP 2001085711A JP 26326399 A JP26326399 A JP 26326399A JP 26326399 A JP26326399 A JP 26326399A JP 2001085711 A JP2001085711 A JP 2001085711A
Authority
JP
Japan
Prior art keywords
thin
solar cell
film solar
opening
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26326399A
Other languages
Japanese (ja)
Other versions
JP4854105B2 (en
Inventor
Masataka Kondo
正隆 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP26326399A priority Critical patent/JP4854105B2/en
Publication of JP2001085711A publication Critical patent/JP2001085711A/en
Application granted granted Critical
Publication of JP4854105B2 publication Critical patent/JP4854105B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To satisfy both appearance and reliability by discretely arranging photovoltaic thin film semiconductor layer in the longitudinal direction in a center part on the width side of a bus area and filling the hole with adhesive conductor. SOLUTION: SiO2 is formed on a transparent insulating substrate 1 and a transparent electrode layer 16 is formed on it. Grooves 18 are installed in the transparent electrode layer 16 by a laser work method. Strip individual region 17 are formed and a semiconductor layer 19 is formed on them. A rear electrode layer 22 is formed on the semiconductor layer 19 and the rear electrode layer 22 is made into individual electrodes 23 by grooves 24. Unit elements 28 across a semiconductor are connected in series between the transparent electrode and the rear electrode. Bus areas 3 and 3' are installed on both ends to which the elements 28 are connected. The plural discrete holes 29 are installed in the regions 3 and 3' and the holes 29 are filled with adhesive conductors.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体装置及び該半
導体装置の製造方法に関し、より詳しくは太陽電池モジ
ュール、特に非晶質シリコンを始めとする薄膜半導体層
により光電変換を行う装置、いわゆる薄膜太陽電池モジ
ュールとその製造方法に関する。更に詳しくは、上記太
陽電池モジュールの正・負極の取出し段における構造と
電気的良導体の取付け方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly, to a solar cell module, and more particularly, a device for performing photoelectric conversion using a thin film semiconductor layer such as amorphous silicon. The present invention relates to a battery module and a method for manufacturing the battery module. More specifically, the present invention relates to a structure of a positive / negative electrode take-out stage of the above-mentioned solar cell module and a method of attaching an electrically good conductor.

【0002】[0002]

【従来の技術】資源の枯渇、あるいは二酸化炭素の発生
量の増大等の環境問題を解決する手段として太陽光発電
が盛んとなっており、シリコン等の半導体材料の使用量
が少ないと言う点で薄膜太陽電池が注目されている。
2. Description of the Related Art Photovoltaic power generation has become popular as a means for solving environmental problems such as depletion of resources or an increase in the amount of generated carbon dioxide, and the use of semiconductor materials such as silicon is small. Attention has been focused on thin-film solar cells.

【0003】薄膜太陽電池は従来から実用化されている
結晶基板を用いる太陽電池と比較して光を電力に変換す
る効率が数割低いながら、設置した後の外観である光入
射面の外観が結晶基板の太陽電池と比較して、1)色調
が茶系統や黒系統であり家屋や建物の屋根と類似してい
る、2)配線や内部の機構が見えることなく密に並べら
れたストリップ状の太陽電池素子が全面に存在するため
に遠目からは一様に見える等の特徴があり、意匠性の面
からも大いに注目を集めている。特に、透明絶縁基板に
直接太陽電池素子を形成し、基板上で接続する薄膜太陽
電池モジュール(以降、基板一体型太陽電池モジュール
と呼ぶ)が提案されており、発電領域の面積はモジュー
ル専有面積の9割程度まで実現可能であり、素子以外の
部分は殆ど目立たない構成となっている。
A thin-film solar cell has an efficiency of converting light into electric power that is several percent lower than a solar cell using a crystal substrate that has been conventionally put into practical use, but the appearance of a light incident surface, which is an appearance after installation, is low. Compared to crystal-based solar cells, 1) the color is brown or black, similar to roofs of houses or buildings. 2) Strips densely arranged without any visible wiring or internal mechanism. Since the solar cell element is present on the entire surface, it looks uniform from a distance, and has attracted much attention in terms of design. In particular, a thin-film solar cell module in which a solar cell element is formed directly on a transparent insulating substrate and connected on the substrate (hereinafter, referred to as a substrate-integrated solar cell module) has been proposed. Up to about 90% can be realized, and portions other than the elements are hardly noticeable.

【0004】基板一体型太陽電池の太陽電池部分の構
造、並びにその製造方法については、米国特許第429
2092号に開示されている。ガラス等の透明絶縁基板
に透明導電膜を形成し、レーザ加工線によりストリップ
状の個別の光起電力領域に分離し、その上にp型、i
型、n型のアモルファスシリコンを全面に製膜し光起電
力半導体層とする。最初の加工線と平行にずらした位置
に隣の素子と接続するための接続溝をレーザ加工にて作
り、さらに裏面電極層を形成した後、接続溝と平行かつ
透明電極の分離溝と反対側に裏面電極分離溝を形成す
る。これらの工程により一つの基板にストリップ状の複
数の光起電力素子が直列に接続された薄膜太陽電池が形
成される。
[0004] The structure of a solar cell portion of a substrate-integrated solar cell and a method of manufacturing the same are disclosed in US Pat.
No. 2092. A transparent conductive film is formed on a transparent insulating substrate such as glass, separated into individual strip-like photovoltaic regions by laser processing lines, and a p-type, i-type
And n-type amorphous silicon are formed on the entire surface to form a photovoltaic semiconductor layer. A connection groove for connecting to the next element is formed by laser processing at a position shifted parallel to the first processing line, and after forming the back electrode layer, it is parallel to the connection groove and opposite to the separation groove of the transparent electrode Then, a back electrode separation groove is formed. Through these steps, a thin-film solar cell in which a plurality of strip-shaped photovoltaic elements are connected in series to one substrate is formed.

【0005】この構成だと太陽電池の接続部分は幅0.
3mm〜0.5mmの細い線として存在し20mも離れ
た場所からは、目視では認識できない。
In this configuration, the connection portion of the solar cell has a width of 0.1 mm.
It exists as a thin line of 3 mm to 0.5 mm and cannot be visually recognized from a place as far as 20 m.

【0006】薄膜太陽電池の電力を取り出す為に接続の
終端部あるいは途中にバス手段が設けられる。バス手段
は発電に寄与しない部分であるので光起電力素子より若
干狭いストリップ状の領域(バス領域)に、より電力を
集めやすい様に、良導体を設置する。良導体としては例
えば特開平3−171675に開示されている様に透明
絶縁基板に透明電極を形成した直後の工程でガラスフリ
ット等の金属粒子を分散したペーストをその領域に塗布
する方法、あるいは特開平9−83001に開示されて
いる様にバス領域の裏面電極層および半導体層を線状に
除去して透明電極を露呈した部分に半田メッキ銅箔をセ
ラミック用の半田で接続する方法がある。
A bus means is provided at or near the end of the connection in order to extract the electric power of the thin-film solar cell. Since the bus means does not contribute to power generation, a good conductor is provided in a strip-shaped area (bus area) slightly narrower than the photovoltaic element so that power can be more easily collected. As a good conductor, for example, a method in which a paste in which metal particles such as glass frit are dispersed is applied to the region in a process immediately after forming a transparent electrode on a transparent insulating substrate as disclosed in JP-A-3-171675, or As disclosed in Japanese Patent Application Laid-Open No. 9-83001, there is a method in which a back electrode layer and a semiconductor layer in a bus region are linearly removed, and a solder-plated copper foil is connected to a portion where a transparent electrode is exposed by using ceramic solder.

【0007】前者の方法を具体的に図2に紹介すると、
薄膜太陽電池100上に正負の電力を集めるバス領域
3,3’を設け、それらの幅方向の概略中央部に裏面電
極層および半導体層を線状に除去して透明電極を露呈し
た部分25を設ける、それらの上には超音波半田ゴテを
用いて鉛、錫、亜鉛及びアンチモンを必須成分とするセ
ラミック半田のバンプを離散的に設けその上に半田メッ
キ銅箔4,4’が設けられている。
The former method is specifically shown in FIG.
Bus regions 3 and 3 'for collecting positive and negative power are provided on the thin-film solar cell 100, and a back electrode layer and a semiconductor layer are linearly removed at a substantially central portion in a width direction of the bus regions 3 and 3' to expose a transparent electrode. Provided on those are discretely provided bumps of ceramic solder containing lead, tin, zinc and antimony as essential components using an ultrasonic soldering iron, and solder plated copper foils 4, 4 'are provided thereon. I have.

【0008】[0008]

【発明が解決しようとする課題】上述した従来技術は、
裏面電極に半田や導電性ペースト等で良導体を設置する
というそれより古い技術で発生する、ペースト材料や半
田材料と裏面電極材料との反応による腐食や接続部分の
剥離等の問題に対して、金属間の電食の問題、剥離の問
題の極めて少ない透明電極層に直接ペースト材料や半田
材料を付けることで解消する視点で発明されたものであ
るが、特開平3−171675に示した方法では、ガラ
スフリット等のペーストが透明電極と接した部分を光入
射側から見ると銀色の光沢部分となることが判明した。
The prior art described above is
Metals are used to solve problems such as corrosion caused by the reaction between the paste material or solder material and the back electrode material, and peeling of the connection part, etc., which occur with the older technology of installing a good conductor with solder or conductive paste on the back electrode. It is invented from the viewpoint of eliminating the problem of electrolytic corrosion during intercalation and the problem of peeling by directly applying a paste material or a solder material to the transparent electrode layer. It was found that the portion where the paste such as glass frit was in contact with the transparent electrode became a silvery glossy portion when viewed from the light incident side.

【0009】一方、特開平9−83001の構造ではバ
ス領域の幅方向の概略中央部に裏面電極層および半導体
層を線状に除去して透明電極を露呈した部分を通して半
田メッキ銅箔の金属光沢が光入射面から見えることが判
明した。
On the other hand, in the structure disclosed in Japanese Patent Application Laid-Open No. 9-83001, the back surface electrode layer and the semiconductor layer are linearly removed at a substantially central portion in the width direction of the bus region, and the metallic luster of the solder-plated copper foil passes through a portion where the transparent electrode is exposed. Was seen from the light incident surface.

【0010】これらの、外観的な特徴は、建物の一部と
して設置するタイプの太陽電池モジュールの意匠性を著
しく損ねることが判明した。
It has been found that these external characteristics significantly impair the design of a solar cell module of the type installed as part of a building.

【0011】すなわち、太陽電池モジュールを一般家屋
などの屋根等の建材あるいは建材に準じた構成要素とし
て用いる場合において、建築家の多くは従来の建材と類
似のあるいはそれを越える意匠性を要求している。例え
ば、屋根葺き材として太陽電池を用いる場合は、通常の
コロニアル瓦やシングルの様に茶系統の色調、艶消し
性、全面が一様で模様が無いことなどの外観的特性が要
求される。
That is, in the case where the solar cell module is used as a building material such as a roof of a general house or a component similar to the building material, many architects demand a design similar to or exceeding the conventional building material. I have. For example, in the case of using a solar cell as a roofing material, appearance characteristics such as a brown color tone, matteness, and a uniform whole surface without a pattern are required as in a normal colonial roof tile or a single.

【0012】この場合、上記に示した金属的な光沢は太
陽電池屋根材の色調から極めて離れたものであり、目立
つ模様となり好ましくない。
In this case, the metallic luster shown above is extremely different from the color tone of the solar cell roof material, and is notable because it becomes a noticeable pattern.

【0013】また、そうかといって、その前の技術の様
に裏面電極に付ける方法では信頼性が著しく低下するこ
とは自明であり、外観と信頼性の両者を満足する構造を
提案することが極めて重要な課題である。
However, it is obvious that reliability is significantly reduced by the method of attaching to the back electrode as in the prior art, and it is necessary to propose a structure that satisfies both appearance and reliability. This is a very important issue.

【0014】[0014]

【課題を解決するための手段】発明者は、上記課題を満
たす解決手段を、特開平9−83001に開示した構造
を出発点として、日夜改良してきた結果、請求項に記載
したように本発明に開示する単純且つ明解な手段を見い
だした。
The inventor of the present invention has improved the means for solving the above problems day and night with the structure disclosed in Japanese Patent Application Laid-Open No. 9-83001 as a starting point. Has found a simple and clear means to disclose.

【0015】本発明の要旨とするところは、透明絶縁基
板上に、透明電極層、光起電力薄膜半導体層、裏面電極
層を含む層が順次形成され、複数個の領域に分割されて
なされる光起電力素子が電気的に接続され、その接続の
終端として電力を取り出すバス領域とそのバス領域の電
力収集をするための金属線あるいは金属リボンからなる
良導体とを有する薄膜太陽電池モジュールのバス領域と
該良導体との接続を、バス領域の幅側の中央部に長手方
向に離散的に配置され透明電極層が露呈するように光起
電力薄膜半導体層または/及び裏面電極層を除去した開
孔と、その開孔を充填し、バス領域と良導体を機械的か
つ電気的に接続する接着性導体とでおこなうことにあ
る。
The gist of the present invention is that a layer including a transparent electrode layer, a photovoltaic thin film semiconductor layer, and a back electrode layer is sequentially formed on a transparent insulating substrate, and is divided into a plurality of regions. A bus area of a thin-film solar cell module having a bus area to which photovoltaic elements are electrically connected and from which power is taken out as an end of the connection and a good conductor made of a metal wire or a metal ribbon for collecting power in the bus area. The hole is formed by removing the photovoltaic thin-film semiconductor layer and / or the back electrode layer so as to expose the transparent electrode layer, which is discretely arranged in the longitudinal direction at the center on the width side of the bus region. And an adhesive conductor that fills the opening and mechanically and electrically connects the bus region and the good conductor.

【0016】ここで用いる接着性導体は、導電性ペース
ト等の様に導電性金属または有機金属成分を含む導電性
液を前記開孔に設置し固化したもの、あるいはセラミッ
ク系の材料に接着性を有する鉛、錫、亜鉛及びアンチモ
ンを必須成分とする半田、更に詳しくは鉛が1〜60重
量%、錫が10〜98重量%、亜鉛が0.01〜25重
量%及びアンチモンが0.01〜50重量%であるのも
のが好ましく用いられる。
The adhesive conductor used here may be one obtained by placing a conductive liquid containing a conductive metal or an organic metal component such as a conductive paste or the like in the above-mentioned opening and solidifying the conductive liquid. Solder containing lead, tin, zinc and antimony as essential components, more specifically, 1 to 60% by weight of lead, 10 to 98% by weight of tin, 0.01 to 25% by weight of zinc and 0.01 to 25% by weight of antimony. Those having 50% by weight are preferably used.

【0017】また金属線あるいは金属リボンからなる良
導体としては半田あるいは錫で被覆された銅の線または
箔であり、好ましくは幅2mm以上の半田メッキ銅箔で
あり、半田メッキの厚みが50μm以上好ましくは10
0μm以上、200μm以下のものが好適に用いられ
る。
A good conductor made of a metal wire or a metal ribbon is a copper wire or foil coated with solder or tin, preferably a solder-plated copper foil having a width of 2 mm or more, and a solder plating thickness of 50 μm or more. Is 10
Those having a size of 0 μm or more and 200 μm or less are preferably used.

【0018】これらの構成の製法としては、バス領域の
幅側の中央部に長手方向に離散的に配置され透明電極層
が露呈するように光起電力薄膜半導体層または/及び裏
面電極層を除去した開孔を設ける工程と、該開孔に接着
性導体のバンプを設置する工程と、該接着性導体のバン
プにバス領域の電力収集をするための金属線あるいは金
属リボンからなる良導体を接続する工程とでこの部分を
実施する。バンプの構成は導電性ペースト等の導電性金
属または有機金属成分を含む導電性液をディスペンスし
て後熱で硬化させるか、セラミックなどに使用する半田
あるいは鉛、錫、亜鉛及びアンチモンを必須成分とする
半田を超音波を発振する半田ゴテで、超音波を発振し且
つ加熱して取り付けても良い。
As a method of manufacturing these structures, the photovoltaic thin film semiconductor layer and / or the back electrode layer are arranged discretely in the longitudinal direction at the center on the width side of the bus region so that the transparent electrode layer is exposed. Providing an opened hole, providing a bump of an adhesive conductor in the opening, and connecting a good conductor made of a metal wire or a metal ribbon for collecting power in a bus area to the bump of the adhesive conductor. This part is implemented in the process. The composition of the bump is to dispense a conductive liquid containing a conductive metal or an organic metal component such as a conductive paste and harden it by post-heating, or to use solder or lead, tin, zinc and antimony used for ceramics as an essential component. The solder to be soldered may be attached by heating with a soldering iron that oscillates ultrasonic waves and oscillates ultrasonic waves.

【0019】開孔を設けるには、開孔の大きさ以下の先
端部を有する金属製の工具で機械的に穿孔するか、ある
いは超音波半田ゴテの様に金属製の工具で超音波を用い
て機械的に穿孔する機械的工程で行われるか、あるい
は、レーザの放射エネルギーを用いて熱的工程で行うこ
とができる。
In order to form an opening, a metal tool having a tip portion smaller than the size of the opening is mechanically pierced, or an ultrasonic wave is applied using a metal tool such as an ultrasonic soldering iron. This can be done in a mechanical step of mechanically drilling the holes or in a thermal step using the radiant energy of the laser.

【0020】さらには、前記の半田を用いる場合にしか
適用できないが、超音波半田ゴテの超音波の周波数やパ
ワー、コテ先と加工部分との距離を最適化することで、
前記開孔を設ける工程と、該開孔に半田のバンプを設置
する工程と同時におこなうことで一工程で本発明の特徴
とする工程が実現できる。この場合の装置的な工夫とし
ては、セラミックに半田を付ける目的として装置に設定
されている条件より。1割以上大きな超音波発振パワー
に設定すると共に、そのパワーが常に出るように、超音
波半田ゴテのコテの部分にある発振子(スピーカーのコ
イルとボールピースだけをこての部分に付けたもの)の
温度を下げる冷却手段を設けている。
Further, although it is applicable only when the above-mentioned solder is used, by optimizing the frequency and power of the ultrasonic wave of the ultrasonic soldering iron, and the distance between the iron tip and the processed part,
By simultaneously performing the step of providing the opening and the step of providing a solder bump in the opening, a step characteristic of the present invention can be realized in one step. In this case, the device is devised based on the conditions set in the device for soldering the ceramic. Set the ultrasonic oscillation power to at least 10% higher, and make sure that the power always comes out by using an oscillator in the iron part of the ultrasonic soldering iron (only the speaker coil and ball piece attached to the iron tip) ) Is provided with a cooling means for lowering the temperature.

【0021】[0021]

【発明の実施の形態】以下、具体的な実施の形態を図1
を用いて説明する。ここに述べられる内容は形態を説明
するものであり、これに限定されるものではなく、別の
形態をとるものであってもその技術思想を反映するもの
であれば、適用できるものである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a specific embodiment will be described with reference to FIG.
This will be described with reference to FIG. The contents described here are for explaining the form, and the present invention is not limited to the form. The present invention can be applied to another form as long as the technical idea is reflected.

【0022】[薄膜太陽電池]図1の断面には、本発明
で用いられる薄膜太陽電池が示されている。
[Thin Film Solar Cell] The cross section of FIG. 1 shows a thin film solar cell used in the present invention.

【0023】薄膜太陽電池で用いられる透明絶縁基板1
としてはガラスや耐熱性のプラスチックが用いられる。
この基板上に基板の不純物がその上の層に拡散しない様
に例えばSiO2が形成される。この上に透明電極層が
形成される。
Transparent insulating substrate 1 used in thin-film solar cell
Glass or heat-resistant plastic is used.
For example, SiO 2 is formed on this substrate so that impurities of the substrate do not diffuse into the layer thereabove. A transparent electrode layer is formed on this.

【0024】透明電極層16としては、結晶粒の頂角に
よって凹凸が形成される形に成長したSnO2が好適に
用いられる。その形成方法としては熱CVD法が一般的
である。
[0024] As the transparent electrode layer 16, SnO 2 is preferably used grown form unevenness is formed by the apex angle of the crystal grains. As a forming method, a thermal CVD method is generally used.

【0025】この透明電極層はレーザ加工法などを用い
て溝18が設けられ、ストリップ状の個別領域17が形
成される。
The transparent electrode layer is provided with a groove 18 by using a laser processing method or the like, and a strip-shaped individual region 17 is formed.

【0026】その上には半導体層19が形成される。半
導体層としてはアモルファスシリコンや、薄膜多結晶シ
リコン、CIS、CdTeなどの光起電力接合が適宜形
成される。また透明電極の材料もこれらの半導体に適し
たものが適宜選択される。
A semiconductor layer 19 is formed thereon. As the semiconductor layer, a photovoltaic junction of amorphous silicon, thin-film polycrystalline silicon, CIS, CdTe, or the like is appropriately formed. Also, the material of the transparent electrode is appropriately selected from those suitable for these semiconductors.

【0027】これらの半導体層には隣の光起電力素子と
の接続の為の溝21が設けられる。
These semiconductor layers are provided with a groove 21 for connection with an adjacent photovoltaic element.

【0028】半導体層19の上には裏面電極層22が形
成される。裏面電極層としては、ZnOなどの透明導電
材料とAgなどの高光反射金属を組み合わせた電極が好
適に用いられる。
On the semiconductor layer 19, a back electrode layer 22 is formed. As the back electrode layer, an electrode in which a transparent conductive material such as ZnO and a high light reflective metal such as Ag are combined is preferably used.

【0029】これらの裏面電極層22は溝24によって
個別の電極23となる。この形態により透明電極と裏面
電極の間に半導体が挟まれた単位素子28が直列に接続
される。
These back electrode layers 22 become individual electrodes 23 by the grooves 24. With this configuration, the unit elements 28 each having a semiconductor sandwiched between the transparent electrode and the back electrode are connected in series.

【0030】これらの素子28が接続されたの両端には
電力を集めるためのバス領域3,3’が設けられる。こ
の領域には透明電極層を露呈させるための離散的な開孔
29が複数設けられる。
At both ends where these elements 28 are connected, bus areas 3 and 3 'for collecting power are provided. In this region, a plurality of discrete openings 29 for exposing the transparent electrode layer are provided.

【0031】この開孔を開ける方法としては、発明者の
実験では後の工程で述べる超音波半田ゴテのチップで半
田を付ける際より高めの超音波パワーで擦ることによ
り、効率良く半導体層及び裏面電極層を除去し透明電極
層を露呈できることが判った。この原理を利用すれば工
業的に採算できる装置を作製することが可能である。そ
の場合、発振子は常に発振する状態であるので、発熱し
この発熱に伴って発振子の共振点が変化するために超音
波パワーが低下することが判明した。この対策として発
振子をブロアーあるいは水冷することで常に安定した超
音波パワーが確保できることが判明した。さらに、この
改良により、超音波半田ゴテのコテ先にセラミック半田
が溶融して付いた状態でも同様に削ることが可能である
とともに半田を付けることも可能であった。この場合、
削る工程と半田を付ける工程ではパワー、コテ先とバス
領域との距離を、削る段階では大きいパワーでコテ先を
押さえつける様にし、半田をつけるときは、少しパワー
を下げて、コテ先を浮かす感触にすると2つの段階が効
率良く行えることが判明した。
In the experiment of the inventor, in the experiment of the inventor, the semiconductor layer and the back surface are efficiently rubbed by rubbing with a higher ultrasonic power than when soldering with an ultrasonic soldering iron tip described in a later step. It was found that the electrode layer could be removed to expose the transparent electrode layer. By utilizing this principle, it is possible to manufacture an industrially viable device. In this case, it has been found that the oscillator always oscillates and generates heat, and the resonance point of the oscillator changes with this heat generation, so that the ultrasonic power decreases. As a countermeasure, it has been found that stable ultrasonic power can always be ensured by blowing or cooling the oscillator. Further, by this improvement, it was possible to similarly cut and attach the solder even when the ceramic solder was melted and attached to the iron tip of the ultrasonic soldering iron. in this case,
In the shaving process and soldering process, the power, the distance between the iron tip and the bus area, and in the shaving stage, use a large power to hold down the iron tip, and when soldering, lower the power a little and feel the iron tip floating It was found that the two steps could be performed efficiently.

【0032】一方、別の方法としては、レーザの条件を
裏面電極を部分的に除去する条件とすることで離散的に
裏面電極と半導体を除去することも原理的には可能であ
る。ただし、この方法を高速に実施する装置の登場を待
つ必要がある。
On the other hand, as another method, it is possible in principle to discretely remove the back electrode and the semiconductor by setting the condition of the laser to a condition for partially removing the back electrode. However, it is necessary to wait for the emergence of a device that performs this method at high speed.

【0033】該開孔には離散的にセラミック半田のバン
プ26が形成される。これらのバンプあるいは開孔の直
径は、同出願人の公開特許平9−135035に開示し
ている様に直径2mmでありバンプの中心と中心の距離
は約20mmである。
In the openings, bumps 26 of ceramic solder are discretely formed. The diameter of these bumps or apertures is 2 mm as disclosed in Japanese Patent Application Laid-Open No. Hei 9-135035 of the applicant, and the distance between the centers of the bumps is about 20 mm.

【0034】セラミック半田は透明電極やセラミックと
接合が可能になるように希土類を配合したものであり、
千住金属などからセラソルザの商品名で市販されてい
る。またこれらの成分は鉛が1〜60重量%、錫が10
〜98重量%、亜鉛が0.01〜25重量%及びアンチ
モンが0.01〜50重量%であるのものが好ましく用
いられている。
The ceramic solder contains a rare earth element so that it can be bonded to a transparent electrode or ceramic.
It is commercially available from Senju Metal under the trade name of Cerasolza. These components contain 1 to 60% by weight of lead and 10% by weight of tin.
Those containing up to 98% by weight, 0.01 to 25% by weight of zinc and 0.01 to 50% by weight of antimony are preferably used.

【0035】また、別の態様としてセラミック半田のか
わりに、ディスペンサーあるいはスクリーン印刷を用い
て金属あるいは導電性樹脂系の導電性ペーストを該開孔
にバンプを設置する。しかるのち、熱風で乾燥すること
でバンプが形成される。
In another embodiment, instead of ceramic solder, a metal or conductive resin-based conductive paste is provided in the opening using a dispenser or screen printing. Thereafter, the bumps are formed by drying with hot air.

【0036】導電性ペーストとしては、市販のものが良
好に用いられるが、本発明を実施するに当たっては乾燥
後の色調が暗い色である必要がある。ペースト材料とし
てはカーボン系、銅系、ニッケル系が好適に用いられ
る。
As the conductive paste, a commercially available paste is preferably used. However, in practicing the present invention, the color tone after drying needs to be dark. As the paste material, a carbon-based, copper-based, or nickel-based paste is preferably used.

【0037】このバンプ26に半田メッキ銅箔4が接続
されている。半田メッキ銅箔4は0.2mm前後の厚み
の幅数mmの銅箔を通常の共晶半田でコートしたもので
ある。このコートにより耐食性が改善されるのと、バン
プの上にこの銅箔を配置し銅箔の上から半田ゴテで押さ
えるだけで容易に半田接続ができるという効果がある。
また、バンプと半田接合強度を確保する上で、半田付け
強度は最低でも1kgは必要であるが、この強度を確保
するためには半田メッキ銅箔上の半田厚みを50μm以
上にする必要があり好ましくは0.1mmあるものが望
ましい。
The solder plated copper foil 4 is connected to the bump 26. The solder-plated copper foil 4 is formed by coating a copper foil having a thickness of about 0.2 mm and a width of several mm with ordinary eutectic solder. The corrosion resistance is improved by this coating, and there is an effect that solder connection can be easily performed only by arranging the copper foil on the bump and pressing the copper foil with a soldering iron.
In addition, in order to secure the bonding strength between the bump and the solder, the soldering strength must be at least 1 kg, but in order to secure this strength, the solder thickness on the solder-plated copper foil must be 50 μm or more. Preferably, it is 0.1 mm.

【0038】半田の量が少ないと半田強度が小さくなる
原因は、銅箔の面が接触面に対して0.1mm以上の凹
凸があり、その凹凸を埋めるだけの半田が無いと半田接
合は面状ではなく点状になるためである。
The reason that the solder strength is reduced when the amount of the solder is small is that the copper foil surface has irregularities of 0.1 mm or more with respect to the contact surface, and if there is not enough solder to fill the irregularities, the solder joint will be a surface. This is because it is not a shape but a dot shape.

【0039】また、ここで用いられる半田付け工程は全
てフラックスを用いない工程になっている。フラックス
を用いるとフラックス中の酸が残留し信頼性を著しく低
下させるためである。
The soldering process used here is a process that does not use flux. This is because when a flux is used, the acid in the flux remains to significantly reduce the reliability.

【0040】この後の工程は、本発明の明細書では詳述
しないが、図3、図4に記載するがごとく、まず図3
(A)の様に、バス領域上3.3’の半田メッキ銅箔
4,4’に別の半田メッキ銅箔5,5’を接続する工
程。
The subsequent steps are not described in detail in the specification of the present invention, but as shown in FIGS.
(A) A step of connecting another solder-plated copper foil 5, 5 'to the 3.3' solder-plated copper foil 4, 4 'on the bus area.

【0041】図3(B)の様に絶縁シートを埋設する充
填材6,8を、絶縁シート7をサンドイッチの様に挟ん
で所定の位置にセットする工程。
As shown in FIG. 3B, a step of setting the fillers 6 and 8 for burying the insulating sheet at predetermined positions with the insulating sheet 7 sandwiched therebetween.

【0042】電力取り出し接続手段までの半田メッキ銅
箔5,5’を端子ボックス設置位置にて、その端子ボッ
クス側の端が基板に対して垂直になるように折り曲げ
て、図3(C)に示す様に半田メッキ銅箔を通すための
スリット10を開口した基板全面を覆う充填材9を被せ
る工程。
The solder-plated copper foils 5, 5 'up to the power extraction connection means are bent at the terminal box installation position so that the terminal box side end thereof is perpendicular to the substrate, and FIG. As shown, a step of covering with a filler material 9 covering the entire surface of the substrate in which a slit 10 for passing a solder-plated copper foil is opened.

【0043】具体的には図3(D)、図4(E)に示す
様に充填材のシートの上に保護カバーの穴より少し大き
めで切り込みのあるTedlerシート小片13を半田
メッキ銅箔の周りにセットし、さらにほぼ同じサイズの
EVAシート小片12をセットする工程と保護カバーを
被せる工程 保護カバーの開口から半田メッキ銅箔を出すとともに耐
熱性テープで銅箔と保護カバーが接触しない位置に仮固
定する工程、図4(F)、図4(G)参照。
Specifically, as shown in FIGS. 3 (D) and 4 (E), a small Tedler sheet piece 13 slightly larger than the hole of the protective cover is cut on the sheet of the filling material with a solder-plated copper foil. Step of setting around and further setting EVA sheet small pieces 12 of almost the same size and step of covering the protective cover Remove solder-plated copper foil from the opening of the protective cover and place it in a position where the copper foil and the protective cover do not come in contact with heat resistant tape Temporarily fixing step, see FIGS. 4 (F) and 4 (G).

【0044】並びに二重真空槽式ラミネーター(略称真
空ラミネーター)で加熱圧着する工程を経て封止された
太陽電池モジュールを作製する。
In addition, a sealed solar cell module is produced through a step of heating and pressing with a double vacuum tank type laminator (abbreviation: vacuum laminator).

【0045】図3、図4に示した工程は、本発明の構造
を構成したあとの工程で構成される要素との関係を示し
たものであり。もちろん、この構成に限定されるもので
はなく。本発明の要素を含むものであれば、適宜、利用
できる。
The steps shown in FIGS. 3 and 4 show the relationship with the elements formed in the steps after the structure of the present invention is formed. Of course, it is not limited to this configuration. Any element that includes the elements of the present invention can be used as appropriate.

【0046】[0046]

【実施例】次に、本発明の実施例をガラス上に構成され
たアモルファスシリコン太陽電池で実施例を示す。
Next, an embodiment of the present invention will be described using an amorphous silicon solar cell formed on glass.

【0047】(実施例1)透明絶縁基板1として短辺5
0cm長辺100cm厚さ4mmの青板ガラスを用い
た。このガラスはプロセス中の熱割れや機械的な破壊を
防ぐため切断面の周辺を面取りしたものを用いている。
(Example 1) As the transparent insulating substrate 1, short sides 5
A blue plate glass having a length of 0 cm and a length of 100 cm and a thickness of 4 mm was used. This glass has a chamfered periphery of the cut surface to prevent thermal cracking and mechanical destruction during the process.

【0048】このガラスに熱CVD法によりアルカリバ
リアとしてSiO2を1000Å形成し透明導電層16
としてフッ素ドープのSnO2を10000Å形成し
た。その表面は結晶粒の頂角によって凹凸が形成されて
いる。
On this glass, SiO 2 was formed as an alkali barrier at a thickness of 1000 ° by thermal CVD to form a transparent conductive layer 16.
Was formed by fluorine-doped SnO 2 at 10000 °. The surface has irregularities formed by the apex angles of the crystal grains.

【0049】この透明電極層16にはYAGレーザの第
2高調波を用いてレーザ加工法で溝18を設けた。
The grooves 18 were formed in the transparent electrode layer 16 by laser processing using the second harmonic of a YAG laser.

【0050】その上にプラズマCVD法を用いてp型ア
モルファスシリコンカーバイドを100Å、i型アモル
ファスシリコンを3000Å、n型アモルファスシリコ
ンを300Å半導体層19として形成した。
A semiconductor layer 19 of p-type amorphous silicon carbide, 3,000-degree i-type amorphous silicon, and 300-degree n-type amorphous silicon was formed thereon by plasma CVD.

【0051】YAGレーザの第2高調波を用いて隣の光
起電力素子との接続の為の溝21が設けられた。
Using the second harmonic of the YAG laser, a groove 21 for connection to an adjacent photovoltaic element was provided.

【0052】更に半導体層19の上に、スパッタ法を用
いてZnOを1000Å、Agを3000Å形成し裏面
電極層22とした。
Further, on the semiconductor layer 19, ZnO was formed at a thickness of 1000 ° and Ag was formed at a thickness of 3000 ° by a sputtering method, thereby forming a back electrode layer 22.

【0053】これらの裏面電極層22はYAGレーザの
第2高調波を用いて溝24を形成し個別の電極23を得
た。この形態により透明電極と裏面電極の間に半導体が
挟まれた単位素子28が直列に接続される。この単位素
子の幅は約10mmである。
The grooves 24 were formed on the back electrode layer 22 using the second harmonic of the YAG laser to obtain individual electrodes 23. With this configuration, the unit elements 28 each having a semiconductor sandwiched between the transparent electrode and the back electrode are connected in series. The width of this unit element is about 10 mm.

【0054】同様にレーザ加工を用いてこれらの素子の
両端に電力を集めるためのバス領域3,3’を5mmの
幅で設けた。正極のバス領域3’と負極のバス領域3と
の間隔は48cmであった。このバス領域の幅方向中央
部に2cmおきに超音波半田ゴテを用いて半導体とアモ
ルファスシリコンを機械的に除去して開孔27を片側4
8個系96個形成しセラソルザのバンプ26を設けた。
この穴の大きさは直径2mmである。
Similarly, bus regions 3 and 3 'for collecting power were provided at both ends of these elements with a width of 5 mm using laser processing. The distance between the positive electrode bus region 3 ′ and the negative electrode bus region 3 was 48 cm. Semiconductors and amorphous silicon were mechanically removed by using an ultrasonic soldering iron every 2 cm at the center in the width direction of the bus region to form an opening 27 on one side 4.
96 bumpers were formed in 8 pieces, and bumps 26 of Cerasolzer were provided.
The size of this hole is 2 mm in diameter.

【0055】このバンプに2mm幅、銅箔厚み0.2m
m、半田厚み0.1mmの半田メッキ銅箔4を接続し
た。
The bump has a width of 2 mm and a thickness of copper foil of 0.2 m.
m, a solder-plated copper foil 4 having a solder thickness of 0.1 mm was connected.

【0056】また基板1の周辺領域27は、サンドブラ
スト法を用いて研磨し全ての上の層が存在しない領域を
設けた。
The peripheral region 27 of the substrate 1 was polished by a sand blast method to provide a region in which all layers were not present.

【0057】なお、バス領域上の半田メッキ銅箔4,
4’は、充填材が銅箔と素子面との隙間に充填するよう
に0.1mmの隙間を形成するように調整した。
The solder-plated copper foil 4 on the bus area
4 ′ was adjusted so as to form a gap of 0.1 mm so that the filler filled the gap between the copper foil and the element surface.

【0058】バス領域3,3’上の半田メッキ銅箔4,
4’の基板端から5cmの位置に長さ30cm幅5mm
の半田メッキ銅箔5,5’を接続した。この銅箔の厚み
と半田厚みは前述の半田メッキ銅箔と同じである。
Solder-plated copper foils 4 on bus areas 3 and 3 '
4cm length 30cm width 5mm 5cm from the edge of the substrate
Are connected. The thickness of the copper foil and the thickness of the solder are the same as those of the above-mentioned solder-plated copper foil.

【0059】この太陽電池モジュールの外観を光入射側
から観察したところ全面の色調はワインレッドであっ
た。太陽電池の接続部は近くで見ると約0.1mmの銀
色の線に見えた。また、バス領域を観察すると、バンプ
の部分が暗い灰色に見えたが、約2m程離れたところで
観察すると、これらの点は見えなくなった。
When the external appearance of the solar cell module was observed from the light incident side, the color tone of the entire surface was wine red. The connection portion of the solar cell was seen as a silver line of about 0.1 mm when viewed close. Also, when observing the bath area, the bumps appeared dark gray, but when observed about 2 m away, these points disappeared.

【0060】半田の色は、テクスチャー透明電極を用い
た場合と平面透明電極を用いた場合ではテクスチャー透
明電極の方が、色調的に暗くなることが判明した。
It has been found that the color of the solder becomes darker in color tone in the case of using the textured transparent electrode and in the case of using the plane transparent electrode.

【0061】(実施例2〜3)半田の換わりに、導電性
ペーストを用いても同様に本発明の接続部分を形成でき
る。銅ペーストを用いた場合は、光照射面からみる色調
が暗赤色になりアモルファスシリコンと類似する色調に
なった。また、クロム系のペーストを用いると黒色にな
ることがわかった。2m以上から離れてみると両者は同
様に目立たなくなることが判った。
(Examples 2 and 3) The connection portion of the present invention can be similarly formed by using a conductive paste instead of solder. When the copper paste was used, the color tone viewed from the light irradiation surface was dark red, and the color tone was similar to that of amorphous silicon. It was also found that the use of a chromium-based paste turned black. From a distance of 2 m or more, it was found that both were similarly inconspicuous.

【0062】[0062]

【発明の効果】以上の様に、本発明によれば、バス領域
との良導体との接続方法を離散的なバンプで行い、それ
らの下地を離散的に設けることにより、当該部分の外観
を大幅に改善することが可能である。
As described above, according to the present invention, the method of connecting a good conductor to the bus area is performed by discrete bumps, and the bases are discretely provided, so that the appearance of the portion can be greatly improved. It is possible to improve.

【0063】このことにより、基板一体型薄膜太陽電池
の本来持っていた外観上の特性を発揮することが可能に
なり、建材用途における薄膜太陽電池の優位性を遺憾な
く発揮することが出来るようになった。
As a result, the inherent appearance characteristics of the substrate-integrated thin-film solar cell can be exhibited, and the superiority of the thin-film solar cell in building material applications can be fully exhibited. became.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の薄膜太陽電池モジュールの各部材の積
層斜視図
FIG. 1 is a laminated perspective view of each member of a thin-film solar cell module of the present invention.

【図2】従来例の薄膜太陽電池モジュールの各部材の積
層斜視図
FIG. 2 is a laminated perspective view of each member of a conventional thin-film solar cell module.

【図3】本発明の配線の工程図(1)FIG. 3 is a process diagram (1) of a wiring according to the present invention;

【図4】本発明の配線の工程図(2)FIG. 4 is a process diagram (2) of the wiring of the present invention.

【符号の説明】[Explanation of symbols]

1 透明絶縁基板 2 太陽電池の発電領域 3,3’ バス領域 4,4’ バス領域のコンダクタンスを増大する手段
(半田メッキ銅箔) 5,5’ バス領域と電力を外部に出すための接続手
段までの配線(半田メッキ銅箔) 6 絶縁シートを埋設する充填材 7 絶縁シート 8 絶縁シートと5の配線を埋設する充填材 9 充填材 10 5の配線を通すために充填材に設けられた開口 11 裏面保護カバーの開口と5の配線との接触を防
ぐ為の開口付きの別の絶縁シート 12 11の絶縁シートを埋設するための充填材 13 裏面保護カバー 14 5の配線を通すために裏面保護カバーに設置さ
れた開口 15 従来発明で用いた絶縁材 16 透明電極層 17 個別の透明電極 18 透明電極を個別化するための溝 19 半導体層 20 個別に分けられた半導体層 21 隣接した光起電力素子を接続するために半導体
層に設けられた溝 22 裏面電極層 23 個別の裏面電極 24 裏面電極を分離するための溝 25 バス領域にコンダクタンス増大手段を接続する
ための溝 26 半田バンプ 27 薄膜太陽電池周囲に設けられた絶縁領域 28 薄膜太陽電池を構成する個別の光起電力素子 29 透明電極層を露呈させるための離散的な開孔 100 太陽電池素子
DESCRIPTION OF SYMBOLS 1 Transparent insulating substrate 2 Solar cell power generation area 3, 3 'bus area 4, 4' Means for increasing the conductance of the bus area (solder plated copper foil) 5, 5 'Connection means for outputting power to the outside and the bus area 6 (filler for embedding insulating sheet) 7 Insulating sheet 8 Filler for embedding wiring between insulating sheet and 5 9 Filling material 10 Opening provided in filling material for passing 5 wiring 11 Another insulating sheet with an opening for preventing the opening of the back protective cover from contacting with the wiring of 5 12 Filler for embedding the insulating sheet of 11 13 Back protective cover 14 Back protecting to pass the wiring of 5 Opening provided in cover 15 Insulating material used in conventional invention 16 Transparent electrode layer 17 Individual transparent electrode 18 Groove for individualizing transparent electrode 19 Semiconductor layer 20 Individually divided semiconductor layer 2 1 groove provided in the semiconductor layer for connecting adjacent photovoltaic elements 22 back electrode layer 23 individual back electrode 24 groove for separating back electrode 25 groove for connecting conductance increasing means to bus area Reference Signs List 26 solder bump 27 insulating region provided around thin-film solar cell 28 individual photovoltaic element constituting thin-film solar cell 29 discrete opening for exposing transparent electrode layer 100 solar cell element

Claims (13)

【特許請求の範囲】[Claims] 【請求項1】 透明絶縁基板上に、透明電極層、光起電
力薄膜半導体層、裏面電極層を含む層が順次形成され、
複数個の領域に分割されてなされる光起電力素子が電気
的に接続され、その接続の終端として電力を取り出すバ
ス領域とそのバス領域の電力収集をするための金属線あ
るいは金属リボンからなる良導体とを有する薄膜太陽電
池モジュールであって、 バス領域と該良導体との接続を、 バス領域の幅側の中央部に長手方向に離散的に配置され
透明電極層が露呈するように光起電力薄膜半導体層また
は/及び裏面電極層を除去した開孔と、 その開孔を充填し、バス領域と良導体を機械的かつ電気
的に接続する接着性導体とでおこなうことを特徴とする
薄膜太陽電池モジュール。
1. A layer including a transparent electrode layer, a photovoltaic thin film semiconductor layer, and a back electrode layer is sequentially formed on a transparent insulating substrate,
A photoconductor element, which is divided into a plurality of areas, is electrically connected, and a bus area from which power is taken out as an end of the connection, and a good conductor made of a metal wire or a metal ribbon for collecting power in the bus area. A thin film solar cell module comprising: a photovoltaic thin film in which a connection between a bus region and the good conductor is discretely arranged in a longitudinal direction at a center portion on a width side of the bus region to expose a transparent electrode layer. A thin-film solar cell module comprising: an opening from which a semiconductor layer and / or a back electrode layer is removed; and an adhesive conductor that fills the opening and mechanically and electrically connects a bus region and a good conductor. .
【請求項2】 前記接着性導体が、導電性金属または有
機金属成分を含む導電性液を前記開孔に設置し、固化し
たものであることを特徴とする請求項1に記載の薄膜太
陽電池モジュール。
2. The thin-film solar cell according to claim 1, wherein the adhesive conductor is formed by setting and solidifying a conductive liquid containing a conductive metal or an organic metal component in the opening. module.
【請求項3】 前記接着性導体が、セラミック用半田あ
るいは、鉛、錫、亜鉛及びアンチモンを必須成分とする
半田であることを特徴とする請求項1に記載の薄膜太陽
電池モジュール。
3. The thin-film solar cell module according to claim 1, wherein the adhesive conductor is a ceramic solder or a solder containing lead, tin, zinc and antimony as essential components.
【請求項4】 前記良導体が半田あるいは錫で被覆され
た銅の線または箔であることを特徴とする請求項1記載
の薄膜太陽電池モジュール。
4. The thin-film solar cell module according to claim 1, wherein said good conductor is a copper wire or foil coated with solder or tin.
【請求項5】 前記鉛、錫、亜鉛及びアンチモンを必須
成分とする半田は、鉛が1〜60重量%、錫が10〜9
8重量%、亜鉛が0.01〜25重量%及びアンチモン
が0.01〜50重量%であることを特徴とする請求項
3記載の薄膜太陽電池モジュール。
5. The solder containing lead, tin, zinc and antimony as essential components contains 1 to 60% by weight of lead and 10 to 9% of tin.
The thin-film solar cell module according to claim 3, wherein 8% by weight, 0.01 to 25% by weight of zinc, and 0.01 to 50% by weight of antimony.
【請求項6】 前記良導体が、幅2mm以上の半田メッ
キ銅箔であり、半田メッキの厚みが50μm以上好まし
くは100μm以上、200μm以下であることを特徴
とする請求項1に記載の薄膜太陽電池モジュール。
6. The thin-film solar cell according to claim 1, wherein the good conductor is a solder-plated copper foil having a width of 2 mm or more, and a thickness of the solder plating is 50 μm or more, preferably 100 μm or more and 200 μm or less. module.
【請求項7】 透明絶縁基板上に、透明電極層、光起電
力薄膜半導体層、裏面電極層を含む層が順次形成され、
複数個の領域に分割されてなされる光起電力素子が電気
的に接続され、その接続の終端として電力を集めるバス
領域を有する薄膜太陽電池を形成する工程と、 バス領域の幅側の中央部に長手方向に離散的に配置され
透明電極層が露呈するように光起電力薄膜半導体層また
は/及び裏面電極層を除去した開孔を設ける工程と、 該開孔に接着性導体のバンプを設置する工程と、 該接着性導体のバンプにバス領域の電力収集をするため
の金属線あるいは金属リボンからなる良導体を接続する
工程とを有することを特徴とする薄膜太陽電池モジュー
ルの製造方法。
7. A layer including a transparent electrode layer, a photovoltaic thin film semiconductor layer, and a back electrode layer is sequentially formed on a transparent insulating substrate,
Forming a thin-film solar cell having a bus region in which photovoltaic elements divided into a plurality of regions are electrically connected and collecting power as an end of the connection; and a central portion on the width side of the bus region. Forming an opening from which the photovoltaic thin-film semiconductor layer and / or the back electrode layer are removed so as to expose the transparent electrode layer which is discretely disposed in the longitudinal direction, and a bump of an adhesive conductor is provided in the opening. And a step of connecting a good conductor made of a metal wire or a metal ribbon for collecting power in a bus area to the bumps of the adhesive conductor.
【請求項8】 前記開孔に接着性導体のバンプを設置す
る工程が、導電性金属または有機金属成分を含む導電性
液をディスペンスする工程を含む請求項7に記載の薄膜
太陽電池モジュールの製造方法。
8. The method for manufacturing a thin-film solar cell module according to claim 7, wherein the step of placing the bump of the adhesive conductor in the opening includes a step of dispensing a conductive liquid containing a conductive metal or an organometallic component. Method.
【請求項9】 前記開孔に接着性導体のバンプを設置す
る工程が、少なくとも一部が鉛、錫、亜鉛及びアンチモ
ンを必須成分とする半田を超音波を発振する半田ゴテ
で、超音波を発振し且つ加熱して取り付ける工程である
ことを特徴とする請求項7に記載の薄膜太陽電池モジュ
ールの製造方法。
9. A step of installing a bump of an adhesive conductor in the opening, wherein at least a part of the solder containing lead, tin, zinc and antimony as an essential component is irradiated with a soldering iron that oscillates ultrasonic waves. The method for manufacturing a thin-film solar cell module according to claim 7, comprising a step of oscillating, heating, and attaching.
【請求項10】 前記開孔を設ける工程が、開孔の大き
さ以下の先端部を有する金属製の工具で機械的に穿孔す
る工程であることを特徴とする。
10. The method according to claim 1, wherein the step of providing the opening is a step of mechanically drilling with a metal tool having a tip portion smaller than the size of the opening.
【請求項11】 前記開孔を設ける工程が、開孔の大き
さ以下の先端部を有する金属製の工具で超音波を用いて
機械的に穿孔する工程であることを特徴とする請求項7
に記載の薄膜太陽電池モジュールの製造方法。
11. The method according to claim 7, wherein the step of forming the opening is a step of mechanically piercing with a metal tool having a tip portion smaller than the size of the opening by using ultrasonic waves.
3. The method for manufacturing a thin-film solar cell module according to item 1.
【請求項12】 前記開孔を設ける工程が、レーザの放
射エネルギーを用いて熱的に穿孔する工程であることを
特徴とする請求項7に記載の薄膜太陽電池モジュールの
製造方法。
12. The method for manufacturing a thin-film solar cell module according to claim 7, wherein the step of providing the holes is a step of thermally piercing using radiant energy of a laser.
【請求項13】 超音波を発振する半田ゴテを用いて前
記開孔を設ける工程と、該開孔に半田のバンプを設置す
る工程と同時におこなうことを特徴とする請求項7に記
載の薄膜太陽電池モジュールの製造方法。
13. The thin-film solar cell according to claim 7, wherein the step of providing the opening using a soldering iron that oscillates an ultrasonic wave and the step of installing a solder bump in the opening are performed simultaneously. Manufacturing method of battery module.
JP26326399A 1999-09-17 1999-09-17 Thin film solar cell module and manufacturing method thereof Expired - Lifetime JP4854105B2 (en)

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