JP2001076989A - Charged particle beam exposure system and method for controlling the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accelerate the exposure processing of exposure control data, in an electron beam exposure system. SOLUTION: This exposure system is provided with plural developing parts 411-1 to 411-8 and RAMs 412-1 to 412-8, and plural unit dot control data, constituting exposure control data are developed in parallel. A cross bar 420 selects the exposed unit dot control data in a prescribed order and writes the data in an FIFO memory 430. The unit dot control data written in the FIFO memory 430 are supplied via a Tmp register 440 to a shift register 450, and converted into serial data, and supplied via a driver 460 to a blanker 32.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam exposure apparatus and a control method thereof, and more particularly, to a charged particle beam exposure apparatus having a control element for controlling an operation of drawing a pattern on a substrate by a charged particle beam. And a control method thereof, and a device manufacturing method using a charged particle beam exposure apparatus controlled by the control method.

[0002]

2. Description of the Related Art As a charged particle beam exposure apparatus, for example, there are an electron beam exposure apparatus and an ion beam exposure apparatus. Charged particle beam exposure apparatuses include, for example, semiconductor integrated circuits, masks or reticles for manufacturing semiconductor integrated circuits, LCDs, and the like.
It is used to draw a desired pattern on a substrate (eg, a wafer, a glass plate, etc.) for forming a display device or the like.

In a charged particle beam exposure apparatus, a desired pattern is drawn on a resist on a substrate by scanning a substrate with the charged particle beam while turning on / off a blanker for controlling irradiation of the charged particle beam. Therefore, the charged particle beam exposure apparatus requires a huge amount of exposure control data to control the exposure by the charged particle beam.

FIG. 34 is a diagram showing a schematic configuration of a conventional charged particle beam exposure apparatus. The storage unit 1101 includes, for example, a hard disk device, and stores exposure control data for controlling exposure. The exposure control data is stored in a compressed state in the storage unit 1101 in order to reduce the data scale.
Is stored in At the time of exposure, necessary parts of a series of exposure control data are sequentially read from the storage unit 1101 and temporarily stored in the buffer memory 1102.

[0005] The expansion processing unit 1103 includes a buffer memory 1
The partial exposure control data temporarily stored in 102 is expanded (expanded) and supplied to the correction processing unit 1104. The correction processing unit 1104 performs correction for reducing the influence of the proximity effect, correction of the drift of the charged particle beam, and supplies the corrected data to the drivers 1105 to 1107.

[0006] A main body 1110 of the exposure apparatus includes a blanker 1111 for controlling on / off of irradiation of the charged particle beam.
A deflector 1112 for deflecting the charged particle beam, a correction coil 1113 for correcting the focal position and aberration,
These are driven by drivers 1105 to 1107, respectively.

[0007]

Since a charged particle beam exposure apparatus draws a pattern on a substrate by scanning the substrate with a charged particle beam, the charged particle beam exposure apparatus generally uses light (eg, ultraviolet light). , X-rays, etc.) in the throughput. This drawback is expected to become more pronounced with miniaturization of devices.

In order to solve this drawback, it is necessary to increase the drawing speed by the charged particle beam. Therefore, at present, drawing of a pattern by a charged particle beam is controlled in accordance with a clock signal of, for example, 100 MHz, and this frequency is expected to be further increased in the future.

However, such a high speed of the clock signal is achieved, for example, by a blanker 1111 or a deflector 1112.
Processing unit 1 that generates data to be supplied to control elements such as
A request for speeding up the expansion processing in 103 is required.

[0010] The present invention has been made in view of the above background, and has as its object, for example, to speed up the expansion processing.

[0011]

A charged particle beam exposure apparatus according to a first aspect of the present invention has a control element for controlling an operation of drawing a pattern on a substrate by the charged particle beam. A storage unit for storing exposure control data including a plurality of compressed unit control data,
A plurality of developing units for extracting and developing compressed unit control data from the exposure control data stored in the storage unit, and the control element according to the plurality of unit control data developed by the plurality of developing units. And a control unit for controlling.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, it is preferable that the plurality of developing units execute the developing process in parallel.

[0013] In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, the plurality of developing units preferably load the compressed unit control data from the storage unit during different periods.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, a plurality of unit control data developed by the plurality of developing units are selected in an order used in controlling the control element. Preferably, the apparatus further comprises a selection unit provided to the control unit.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, in the exposure control data,
Preferably, the plurality of compressed unit control data are arranged in an order used when controlling the control element.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, the apparatus further comprises a charged particle source for generating a plurality of charged particle beams, and the control element includes a plurality of charged particles with respect to a substrate. It is preferable to include a plurality of irradiation control units for individually controlling the irradiation of the line.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, each of the irradiation controllers preferably controls whether or not the substrate is irradiated with the charged particle beam.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, it is preferable that each of the above-mentioned irradiation controllers controls the time for irradiating the substrate with the charged particle beam.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, each of the irradiation controllers preferably includes a blanker for controlling whether or not to deflect the charged particle beam.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, each of the unit control data preferably includes data for controlling the plurality of irradiation control units.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, each of the unit control data includes data for controlling all of the plurality of irradiation control units within the same period. Is preferred.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, for example, the control element preferably includes a deflector for scanning the substrate with the charged particle beam.

In the charged particle beam exposure apparatus according to the first aspect of the present invention, it is preferable that the apparatus further includes an exposure control data generation unit that generates the exposure control data based on, for example, a pattern to be drawn on a substrate.

A control method of a charged particle beam exposure apparatus according to a second aspect of the present invention is a method of controlling a charged particle beam exposure apparatus having a control element for controlling an operation of drawing a pattern on a substrate by a charged particle beam. A developing step of extracting a plurality of compressed unit control data from the exposure control data including a plurality of compressed unit control data and performing a developing process on each of a plurality of developing units for developing the developed unit control data; And a control step of controlling the control element in accordance with the plurality of unit control data developed in (1).

A device manufacturing method according to a third aspect of the present invention includes a step of drawing a pattern on a substrate while controlling a charged particle beam exposure apparatus by the control method according to the second aspect. Features.

In a method of manufacturing a device according to a fourth aspect of the present invention, a charged particle beam exposure apparatus having a control element for controlling an operation of drawing a pattern on a substrate by a charged particle beam is used in a part of the process. A charged particle beam exposure apparatus, wherein a plurality of expanded unit for extracting and expanding compressed unit control data from exposure control data including a plurality of compressed unit control data. A developing step of executing a developing process; and a drawing step of drawing a pattern on a substrate while controlling the control elements in accordance with the plurality of unit control data developed in the developing step.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In this embodiment, an electron beam exposure apparatus will be described as an example of a charged particle beam exposure apparatus. However, the present invention can be applied to not only an electron beam exposure apparatus but also, for example, an ion beam exposure apparatus.

FIG. 1 is a schematic view of an electron beam exposure apparatus according to a preferred embodiment of the present invention. In FIG. 1, 1
Is an electron gun including a cathode 1a, a grid 1b, and an anode 1c. The electrons emitted from the cathode 1a form a crossover image as the electron source ES between the grid 1b and the anode 1c.

The electrons emitted from the electron source ES are applied to the elementary electron optical system array 3 via the condenser lens 2. The condenser lens 2 includes, for example, three aperture electrodes.

As shown in FIG. 2B, the elementary electron optical system array 3 includes an aperture array AA, a blanker array BA, and an elementary electron optical system array unit which are sequentially arranged along the optical axis AX from the electron gun 1 side. LAU, stopper array S
A. The details of the element electron optical system array 3 will be described later.

The element electron optical system array 3 forms a plurality of intermediate images of the electron source ES, and each intermediate image is reduced and projected on a substrate 5 such as a wafer by a reduction electron optical system 4 described later. Thereby, a plurality of electron source images having the same shape are formed on the substrate 5. The element electron optical system array 3 forms the plurality of intermediate images so as to correct aberrations generated when the plurality of intermediate images are reduced and projected on the substrate 5 via the reduction electron optical system 4.

The reduction electron optical system 4 includes a first projection lens 41
And a symmetric magnetic doublet comprising a first projection lens 43 and a second projection lens 44. First projection lens 41
The focal length of (43) is f1, the second projection lens 42 (4
Assuming that the focal length of 4) is f2, the distance between the two lenses is f1 + f2.

The object point on the optical axis AX is the first projection lens 41
It is at the focal position (43), and its image point is focused on the focal point of the second projection lens 42 (44). This image is reduced to -f2 / f1. Further, in the exposure apparatus 100, the two lens magnetic fields are determined so as to act in directions opposite to each other. Therefore, in theory, spherical aberration, isotropic astigmatism, isotropic coma aberration, field curvature aberration, Except for the five axial chromatic aberrations, other Seidel aberrations and chromatic aberrations related to rotation and magnification are canceled out.

Reference numeral 6 denotes a deflector for deflecting a plurality of electron beams from the elementary electron optical system array 3 and displacing a plurality of electron source images on the substrate 5 by substantially the same amount of displacement in the X and Y directions. . Although not shown, the deflector 6 includes a main deflector used when the deflection width is wide, and a sub deflector used when the deflection width is narrow. The main deflector is an electromagnetic deflector, and the sub deflector is an electrostatic deflector.

Reference numeral 7 denotes a dynamic focus coil which corrects a shift of the focal position of the electron source image due to deflection aberration generated when the deflector 6 is operated, and 8 denotes astigmatism of deflection aberration generated by deflection. Is a dynamic stig coil for correcting

Numeral 9 shows a state in which the substrate 5 is placed and the optical axis AX (Z axis)
A stage reference plate 10 is fixedly mounted on a θ-Z stage that is movable in a direction and a rotation direction around the Z axis.

Reference numeral 11 denotes a stage on which the θ-Z stage is mounted, and the optical axis A
This is an XY stage that can move in an XY direction orthogonal to X (Z axis).

Reference numeral 12 denotes a backscattered electron detector for detecting backscattered electrons generated when the mark on the stage reference plate 10 is irradiated by the electron beam.

Next, the structure of the elementary electron optical system array 3 will be described with reference to FIGS. As described above, the element electron optical system array 3 includes the aperture array AA, the blanker array BA, the element electron optical system array unit LAU, and the stopper array SA. FIG.
2A is a diagram of the element electron optical system array 3 viewed from the electron gun 1 side, and FIG. 2B is a cross-sectional view taken along line AA ′ of FIG. 2A.

As shown in FIG. 2A, the aperture array AA has a structure in which a plurality of openings are provided in a substrate, and divides an electron beam from the condenser lens 2 into a plurality of electron beams.

The blanker array BA is formed by forming a plurality of deflectors for individually deflecting each electron beam formed by the aperture array AA on a single substrate. FIG.
FIG. 3 is a diagram illustrating one deflector formed on a blanker array BA. The blanker array BA includes a substrate 31 having a plurality of openings AP formed thereon, a blanker 32 having a pair of electrodes sandwiching the openings AP, and having a deflection function.
And a wiring W for individually turning on and off the blankers 32. FIG. 4 is a view of the blanker array BA as viewed from below.

The element electron optical system array unit LAU is
It comprises a first electron optical system array LA1 and a second electron optical system array LA2, which are electron lens arrays in which a plurality of electron lenses are two-dimensionally arranged on the same plane.

FIG. 5 is a view for explaining the first electron optical system array LA1. The first electron lens array LA1 includes an upper electrode plate UE, an intermediate electrode plate CE, and a lower electrode plate L in each of which a plurality of donut-shaped electrodes corresponding to a plurality of openings are arranged.
E and a structure in which these three electrode plates are laminated with an insulator interposed therebetween.

The donut-shaped electrodes of the upper, middle, and lower electrode plates having the same XY coordinates constitute one electron lens (a so-called unipotential lens) UL. The donut-shaped electrode of the upper electrode plate of each electron lens UL is connected to the LAU control circuit 112 by a common wiring W1, and the donut-shaped electrode of the lower electrode plate of each electron lens UL is connected to the LAU control circuit 112 by a common wiring W3. It is connected to the.
An accelerating potential of the electron beam is applied between the donut-shaped electrode of the upper electrode plate and the donut-shaped electrode of the lower electrode plate.
An appropriate potential is supplied from the LAU control circuit 112 to the donut-shaped electrode of the intermediate electrode plate of each electron lens via the individual wiring W2. Thereby, the electron optical power (focal length) of each electron lens can be set to a desired value.

The second electron optical system array LA2 has the same structure and function as the first electron optical system array LA1.

As shown in FIG. 2B, in the element electron optical system array unit LAU, one electron lens of the first electron lens array LA1 and one electron lens of the second electron lens array LA2 having the same XY coordinates are used. The element electron optical system EL is configured.

The aperture array AA is located at a substantially front focal position of each element electron optical system EL. Accordingly, each of the element electron optical systems EL forms an intermediate image of the electron source ES at each substantially rear focal position by each of the divided electron beams. Here, to correct the field curvature aberration generated when the intermediate image is reduced and projected on the substrate 5 via the reduction electron optical system 4,
By adjusting the potential applied to the donut-shaped electrode of the intermediate electrode plate for each element electron optical system EL, the electro-optical power of the electron lens is adjusted, and the intermediate image forming position is adjusted.

The stopper array SA has a structure in which a plurality of openings are formed in a substrate, similarly to the aperture array AA. The electron beam deflected by the blanker array BA is
The electron beam is applied to the outside of the opening of the stopper array SA corresponding to the electron beam, and is blocked by the substrate.

Next, the function of the elementary electron optical system array 3 will be described with reference to FIG. Electrons radiated from the electron source ES pass through the condenser lens 2, thereby forming substantially parallel electron beams. The substantially parallel electron beam is divided into a plurality of electron beams by an aperture array AA having a plurality of openings. Each of the split electron beams enters the elementary electron optical system EL1 to EL3, and forms an intermediate image img1 to img3 of the electron source ES at a substantially front focal position of each elementary electron optical system. Then, each intermediate image is transmitted through a reduction electron optical system 4 to a substrate 5 which is a surface to be exposed.
Projected to

Here, the image plane distortion generated when a plurality of intermediate images are projected onto the surface to be exposed (the actual image forming position on the substrate 5 in the optical axis direction of the reduction electron optical system 4 and the ideal image forming position). As described above, the optical characteristics of a plurality of element electron optical systems are individually set, and the intermediate image forming position in the optical axis direction is different for each element electron optical system in order to correct the deviation from the image position). I have.

The blanker B1 of the blanker array BA
B3 and the stoppers S1 to S3 of the stopper array SA individually control whether each electron beam is irradiated onto the substrate 5. In FIG. 6, since the blanker B3 is on, the electron beam to form the intermediate image img3 does not pass through the opening S3 of the stopper array SA and is blocked by the substrate of the stopper array SA.

FIG. 7 shows the electron beam exposure apparatus 1 shown in FIG.
It is a figure which shows the structure of the control system of 00. BA control circuit 11
Reference numeral 1 denotes a control circuit for individually controlling ON / OFF of each blanker of the blanker array BA. LAU control circuit 112: a control circuit for controlling the focal length of the electronic lens EL constituting the lens array unit LAU; D_STIG control circuit 1.
13 is a control circuit for controlling the dynamic stig coil 8 to correct astigmatism of the reduction electron optical system 4;
The D_FOCUS control circuit 114 controls the dynamic focus coil 7 to adjust the focus of the reduction electron optical system 4. The deflection control circuit 115 controls the deflector 6, and the optical characteristic control circuit 116.
Is a control circuit for adjusting the optical characteristics (magnification, distortion) of the reduction electron optical system 4. The backscattered electron detection circuit 117 is a circuit that calculates the amount of backscattered electrons from a signal from the backscattered electron detector 12.

The stage drive control circuit 118 is a control circuit that controls the drive of the XY stage 11 in cooperation with the laser interferometer LIM that detects the position of the XY stage 11 while controlling the drive of the θ-Z stage 9.

The sub-control unit 120 reads out the exposure control data stored in the memory 121 via the interface 122, and based on the read out, controls the control circuit (control element) 11.
1 to 116 and 118 and the backscattered electron detection circuit 117 are controlled. The main control unit 123 controls the entire electron beam exposure apparatus 100 as a whole.

Next, a schematic operation of the electron beam exposure apparatus 100 shown in FIG. 1 will be described with reference to FIG.

The sub-controller 120 reads out the exposure control data from the memory 121 and uses the exposure control data as deflection control data (main deflector reference position, sub-deflector reference position) as control data for controlling the deflector 6. , Main deflection stage follow-up data and deflection control data) are extracted and provided to the deflection control circuit 115, and blanker control data (for example, dot data) is used as control data for controlling each blanker of the blanker array BA from the exposure control data. Control data or dose control data) to extract the BA control circuit 11
1 to provide.

The deflection control circuit 115 controls the deflector 6 based on the deflection control data, thereby deflecting a plurality of electron beams. At the same time, the BA control circuit 111
Each blanker of the blanker array BA is controlled, thereby turning on the blanker according to the pattern to be drawn on the substrate 5.
Turn off. When scanning the substrate 5 with a plurality of electron beams to draw a pattern on the substrate 5, the XY stage 11 is continuously driven in the y direction, and a plurality of XY stages 11 are moved so as to follow the movement of the XY stage 11. The electron beam is deflected by the deflector 6.

Each electron beam scans and exposes a corresponding element exposure area (EF) on the substrate 5 as shown in FIG.
This electron beam exposure apparatus is designed such that element exposure areas (EF) by each electron beam are two-dimensionally adjacent to each other, and a subfield (SF) composed of a plurality of element exposure areas (EF) is formed once. Exposed. In the example shown in FIG. 8, one element exposure area (EF) is composed of an 8 × 8 element matrix. Each element of this matrix is
2 shows a region (position) where the electron beam deflected by the deflector 6 is irradiated on the substrate 5. In other words, one element exposure area (EF) composed of a matrix of 8 × 8 elements
Are scanned by one electron beam in the order shown by the arrow in FIG.

After one sub-field (SF1) is exposed, the sub-control unit 120 sets the next sub-field (SF).
The deflection control circuit 115 is instructed so that 2) is exposed, and the XY stage 11 at the time of scanning exposure is controlled by the deflector 6.
A plurality of electron beams are deflected in a direction (x direction) orthogonal to the scanning direction (y direction).

Along with such switching of the subfields, the aberration when each electron beam is reduced and projected through the reduction electron optical system 4 also changes. Therefore, the sub control unit 120
Are the LAU control circuit 112 and the D_STIG control circuit 1
13 and the D_FOCUS control circuit 114 so as to correct the changed aberration.
U, the dynamic stig coil 8 and the dynamic focus coil 7 are adjusted.

After the switching of the subfields, a plurality of electron beams are again applied to the corresponding element exposure areas (EF).
Is performed, the second sub-field (SF2) is exposed. In this way, as shown in FIG. 8, by sequentially performing the exposure of the subfields SF1 to SF6, the subfields SF1 to SF6 are arranged in the direction (x direction) orthogonal to the scanning direction (y direction) of the XY stage 11 during the scanning exposure. The exposure of the main field (MF) including the subfields SF1 to SF6 is completed.

After the exposure of the first main field (MF1) shown in FIG.
Reference numeral 20 designates a deflection control circuit 115 to sequentially deflect a plurality of electron beams into a main field (MF2, MF3, MF3, MF4,...) Arranged in the scanning direction (y direction) of the XY stage 11, and to perform exposure. Execute Thereby, as shown in FIG. 8, the main fields (MF2, M
Exposure is performed on a stripe region (STRIPE1) composed of F3, MF3, MF4...

Next, the sub-control unit 120 instructs the stage drive control circuit 118 to move the XY stage 11 stepwise in the x direction, and to move to the next stripe area (STRIPE).
Perform 2).

FIG. 9 is a diagram showing a configuration of an exposure system according to a preferred embodiment of the present invention. This exposure system is configured by connecting an electron beam exposure apparatus 100 shown in FIG. The information processing apparatus 200 acquires, for example, exposure pattern data from another information processing apparatus via the communication line 220, and based on the exposure pattern data, generates compressed exposure control data suitable for the electron beam exposure apparatus 100. Generate
Electron beam exposure apparatus 100 via communication cable 210
To provide.

More specifically, the information processing device 200
Exposure pattern data is acquired from another information processing apparatus via the communication line 220 and stored in the storage unit 201. Here, the exposure pattern data may be obtained from a memory medium (for example, a magnetic tape, a disk, or the like) in which the exposure pattern data is stored.

Next, in the information processing apparatus 200, the control data generation unit 202 controls a plurality of control data (for example, dot control for controlling a blanker) for controlling the electron beam exposure apparatus 100 based on the exposure pattern data. Data or dose control data, deflection control data for controlling the deflector, etc.).

Next, the information processing device 200
In step 03, a plurality of control data generated by the control data generation unit 202 are divided into predetermined units to generate a plurality of unit control data, and the plurality of unit control data are arranged in a predetermined order. Thereby, the plurality of control data
Converted to data format for compression processing.

Next, the information processing device 200
In 04, the plurality of control data converted by the conversion unit 203 is compressed in a format that can be expanded in parallel by a predetermined unit by a plurality of expansion units.

Next, in the information processing apparatus 200, the exposure control data generation unit 205 integrates the plurality of control data compressed by the compression unit 204 and other data to generate compressed exposure control data.

Next, the information processing apparatus 200 provides the generated exposure control data to the electron beam exposure apparatus 100 via, for example, the communication cable 210.

A preferred embodiment of the format of the exposure control data generated by the information processing apparatus 200, a method of generating the exposure control data, and a method of using the exposure control data in the electron beam exposure apparatus 100 will be specifically described below. I do.

[First Embodiment] FIG. 10 is a diagram showing a first example of a format of exposure control data generated by the information processing apparatus 200. Although FIG. 10 shows only one partial exposure control data for controlling the exposure of one subfield (SF) for convenience of explanation,
The entire exposure control data includes all subfields (S
A plurality of partial exposure control data for controlling the exposure of F) is included.

The partial exposure control data for one sub-field (SF) according to this embodiment includes a sub-field number 301, a stage reference position 302, a main deflector reference position 303, a sub-deflector reference position 304, a reference dose. 305, main deflection stage follow-up data 306, and dot control data 310.

The subfield number 301 is a number for specifying a subfield (SF). The stage reference position 302 is a reference position of the XY stage 11 at the time of exposure of the subfield. The main deflector reference position 303 is a reference in the coordinate system of the XY stage 11 (or a reference of the amount of deflection) at which the electron beam deflected by the main deflector of the deflector 6 enters the XY stage 11 during the exposure of the subfield. ). The sub-deflector reference position 304 is a reference in the coordinate system of the XY stage 11 (or a reference of the amount of deflection) at which the electron beam deflected by the sub-deflector of the deflector 6 is incident on the XY stage 11 during the exposure of the subfield. ). Main deflection stage follow-up data 30
6 is a deflector for causing the plurality of electron beams to follow the movement of the XY stage 11 driven in the y direction when scanning the substrate 5 with a plurality of electron beams to draw a pattern on the substrate 5. 6 is data for controlling the main deflector.

The dot control data 310 includes the compressed first to n-th unit dot control data 310-1 to 310-n.
including. Here, it is preferable that the first to n-th unit dot control data constituting the dot control data 310 are arranged in the order used in the electron beam exposure apparatus 100 when controlling the exposure. This is to enable the electron beam exposure apparatus 100 to develop a plurality of unit dot control data sequentially from the top of the exposure control data. However, such an array of unit dot control data is not an indispensable matter for carrying out the present invention,
For example, by adding pointer information or the like for specifying the address of each compressed unit dot control data to the exposure control data, the electron beam exposure apparatus 100 converts necessary unit dot control data based on the pointer information. It can be extracted from the exposure control data and developed.

The electron beam exposure apparatus 100 is provided with a plurality of developing sections. By developing the corresponding unit dot control data by the plurality of developing sections, the developing processing of the plurality of dot control data is performed in parallel. Can be performed.

FIG. 11 is a diagram showing a configuration example of each unit dot control data. One unit dot control data is, for example, the number of electron beams for executing exposure of one subfield (SF), that is, the elementary electron optical system array 3.
Number of element electron optical systems provided in (Blanker array BA
The number of EF data (i, j, k) equal to the number of blankers provided in (i), and the value of k includes the common EF data (i, j, k). Here, the EF data (i, j,
k) is for controlling whether or not to irradiate the substrate 5 with an electron beam corresponding to the element electron optical system in the i-th row and the j-th column, that is, in the i-th row and the j-th column provided in the blanker array BA. It is a k-th data group for controlling ON / OFF of a blanker.

In the examples shown in FIGS. 1, 2, 4, 5, and 8, the element electron optical system array 3 is composed of 8 rows × 8 columns of element electron optical systems. That is, 1 (ell) and m are 8. In addition, the element electron optical system array has various numbers, such as an element electron optical system of 16 rows × 16 columns, an element electron optical system of 160 rows × 160 columns, etc., in addition to the element electron optical system of 8 rows × 8 columns. Can be constituted by the element electron optical system.

The number n of unit dot control data constituting one dot control data 310 (that is, the number of divisions of dot control data) is determined, for example, by the number of rows in a matrix constituting one element exposure area (EF) (see FIG. In the example shown in FIG. 8, it is determined to be equal to 8 rows). In this case, exposure of one row (kth row) of one element exposure area is performed according to one dot control data.

The number n of unit dot control data constituting one dot control data 310 is not limited to the above example, but can be changed as appropriate.

Referring to FIG. 9, the control data generating section 202 controls each of the element electron optical systems (blankers) of l (ell) rows × m columns for each subfield (SF) based on the exposure pattern data. (M) dot control data (here, one dot control data continuously controls on / off of a blanker of one elementary electron optical system at the time of exposure of one subfield. (Which means time series data).

Next, the conversion unit 203 divides each dot control data into n parts. As a result, 1 (ell) × m × n EFs are obtained from 1 (ell) × m dot control data.
Data (i, j, k) (i = 1 to l (el), j = 1 to
m, k = 1 to n) are generated.

Next, in the compression section 204, 1 (ell) ×
mxn EF data (i, j, k) (i = 1 to 1 (ell), j = 1 to m, k = 1 to n) are compressed. here,
EF data (i, j, k) having the same value of k (i = 1 to l
(L), j = 1 to m) may be combined in a predetermined order, and then the combined EF data group may be subjected to compression processing.

Next, the exposure control data generation unit 205
The EF data (i, j, k) after compression and other data are integrated to generate exposure control data shown in FIGS. Here, in the examples shown in FIG. 10 and FIG. 11, one unit dot control data is represented by l (L) having the same value of k.
X m EF data (i, j, k), the electron beam exposure apparatus 100 allows
EF data (i, j, k) for simultaneously controlling m blankers can be simultaneously developed (reproduced).

FIG. 12 is a diagram showing a configuration example of the blanker array control circuit 111 according to this embodiment. The blanker array control circuit 111 according to this embodiment includes a decompression processor 410, a crossbar 420, a FIFO memory 430, a temporary register 440, and a blanker 32.
Shift registers 45 as many as the number (l (ell) × m)
0, a driver 460, and a data controller 470.

The expansion processing section 410 includes a plurality of expansion processing sections and a RAM as first to eighth expansion sections 411-1 to 411.
-8 and first to eighth RAMs 412-1 to 412-8. The first to eighth development units 411-1 to 411-8 respectively control the interface 12 according to a control signal (Expcntl) supplied from the data controller 470.
2 and the corresponding unit dot control data in the exposure control data from the memory 121 via the sub control unit 120, and stores the unit dot control data in the first to eighth RAMs 412.
-1 to 412-8 are expanded on the corresponding RAM.

The crossbar 420 controls the control signal (selection signal Select) supplied from the data controller 470.
According to t), the first to eighth RAMs 412-1 to 412-412
8 is selected and the expanded unit dot control data in the selected RAM is stored in the FIFO memory 430.
To provide. Here, the first to eighth RAMs 412-1 to 412-4
12-8 each represent l (ell) × m EF data (i, j, k) as expanded unit dot control data.
(I = 1 to 1 (ell), j = 1 to m, k) are output in parallel.

The FIFO memory 430 stores a control signal (write signal wr) supplied from the data controller 470.
), the unit dot control data supplied from the crossbar 420, that is, l (ell) × m EF data (i, j, k) (i = 1 to 1 (el), j = 1 to m,
k) is stored. Then, in accordance with the control signal (read signal read) supplied from the data controller 470, the FIFO memory 430 stores unit dot control data that has been input first and has not been output yet, that is, l (L) ×
The m pieces of EF data (i, j, k) (i = 1 to 1 (ell), j = 1 to m, k) are output as parallel data.

The temporary register 440 controls the control signal (Tmp Re) supplied from the data controller 470.
g Load), the unit dot control data supplied from the FIFO memory 430, that is, 1 (el) × m EF data (i, j, k) (i = 1 to 1 (el), j
= 1 to m, k) are loaded and output.

1 (ell) × m shift registers 450
Is, as shown in FIG. 14, 1 (m) × m blankers 3
2, respectively. Each shift register 4
Reference numeral 50 denotes l (ell) × m EF data (i, i) output from the temporary register 440 as parallel data.
j, k) (i = 1 to 1 (ell), j = 1 to m, k), the corresponding EF data (i, j, k) is converted into a control signal (Shift R) supplied from the data controller 470.
eg store).

Then, the corresponding EF data (i, j,
k), the shift register 450 receives the control signal (Shift) supplied from the data controller 470.
Clock), EF as parallel data
The data (i, j, k) is converted into EF data (i, j, k) as serial data, and the corresponding driver 46
0 to the corresponding blanker 32.

In this embodiment, each unit dot control data is EF data (i, j, k) for controlling all the l (m) × m blankers 32 at the same time, ie, k
L (m) × m EF data (i, j,
k) (i = 1 to 1 (ell), j = 1 to m, k). That is, in this configuration example, 1 (m) × m EF data (i, j, k) having a common value of k is one of the first to eighth expansion units 411-1 to 411-8. The data is simultaneously developed on the corresponding RAM by the developing unit, and is simultaneously supplied to the FIFO memory 430. According to this configuration example, for example, the number of expansion units and the number of FIFO memories can be reduced. However, as described below,
An implementation format that is not based on such a premise can be adopted.

FIG. 13 is a timing chart showing the operation of blanker array control circuit 111 shown in FIG.
As shown in FIG. 13, in the expansion processing unit 410 of the blanker array control circuit 111 according to this embodiment, the memory 121 is controlled by the first to eighth expansion units 411-1 to 411-8.
Of the corresponding unit dot control data from FIG.
Then, "load1", "load2", "load
3 "...), And expansion processing (" expand "in FIG. 13)
1 "," expand2 "," expand3 "
·), Store processing to RAM (“stor” in FIG. 13)
e1 "," store2 "," store3 "...)
Are executed in parallel.

The crossbar 420 controls the control signal (selection signal Select) supplied from the data controller 470.
According to t), the first to eighth RAMs 412-1 to 412-412
8 are sequentially selected, and the RA
The developed unit dot control data in M is output.

The timing chart shown in FIG. 13 is composed of l (m) × m Es constituting one dot control data.
This is an example of a case where F data (i, j, k) is composed of time-series data for 16 dots. In this example, crossbar 4
20 sequentially selects eight RAMs (development units) at a cycle of 180 ns. That is, one RAM (development unit) has 8 RAMs.
It is selected once per (number of developed parts) × 180 ns. Therefore, in this example, each developing unit may complete the loading, developing, and storing processing of one unit dot control data within 8 (the number of developing units) × 180 ns. on the other hand,
In order to achieve the same drawing speed as in this example with a single developing unit as in the related art, it is necessary to complete the loading, developing, and storing processes of data corresponding to one unit dot control data within 180 ns. is there. In other words, in this embodiment, assuming that the number of development units is ne, each of the development units loads, expands,
Store processing can be performed.

Next, a control procedure of the blanker array control circuit 111 by the data controller 470 will be described with reference to FIGS.

FIG. 15 is a flowchart showing a control procedure of the expansion processing unit 410 by the data controller 470. In step S401, the first to eighth developing units 411
-1 to 411-8 are loaded with separate unit dot control data. In step S402, the first to eighth expansion units 411-1 to 411-8 are caused to execute the expansion processing in parallel. In step S403, the unit dot control data that has been developed is stored in the first to eighth RAMs 412-1 to 412-8.
And returns to step S401.

FIG. 16 is a flowchart showing a control procedure of a writing process to the FIFO memory 430 by the data controller 470. In step S411, the parameter sn is initialized to "1". Step S
At 412, the first to eighth RAMs 412-1 to 412-8
Of the snth RAM is selected by the crossbar 420,
In step S413, the developed unit dot control data is read from the selected RAM, and written to the FIFO memory 430.

In step S414, the FIFO memory 4
It is determined whether it is possible to write the next unit dot control data in the unit 30. If the next unit dot control data cannot be written, the unit dot control data is read out from the FIFO memory 430, so that the next unit dot control data is read out. Wait until writing of unit dot control data becomes possible.

In step S415, the parameter sn
Is added to "1". In step S416, sn = 9
Is determined, and if sn = 9, step S4 is performed.
11, the sn is initialized to "1" again, and sn = 9
If not, the process returns to step S412.

FIG. 17 is a flowchart showing a control procedure of the reading process from the FIFO memory 430 by the data controller 470. In step S421,
The unit dot control data written first is read from the FIFO memory 430, and in step S422, the unit dot control data is stored in the temporary register 440. In step S423, the EF data (i, j, k) (i = 1 to 1 (el), j =
1 to m) are each 1 (ell) × m shift registers 4
The data is stored in the corresponding shift register 450 out of 50.

In step S424, a shift clock (Shift Clock) is supplied to each shift register 450.
And the EF data (i,
j, k) (i = 1 to 1 (ell), j = 1 to m) are converted into serial data and output. In step S424, EF data (i, j, k) (i = 1 to l (ell),
It is determined whether or not the shifting of all bits (j = 1 to m) has been completed. If the shifting has been completed, the process returns to step S421; otherwise, the process returns to step S424.

FIG. 18 is a diagram showing the configuration of each development unit 41 from the memory 121.
12 is a timing chart showing a control method for increasing the efficiency of processing for loading unit dot control data into 1-1 to 411-8. In the control methods shown in FIG. 13 and FIG.
The eight unit control data are processed in parallel to the first to eighth developing units 41.
In this case, for example, eight expansion units 411-1 to 411 are loaded from the memory 121.
The bit width of the load bus reaching −8 increases.

In the example shown in FIG. 18, the unit dot control data is loaded into one development unit within one period, so that the eight development units 411-1 to 411-8 share a bus. Thus, the bit width of the bus can be reduced.

The above embodiment is merely one application example of the present invention, and other configuration examples can be adopted.

For example, EF data (i, i) for controlling all (l) × m / 2 blankers 32 at the same time.
j, k), that is, l (el) × m / 2 EF data (i, j, k) (i = 1 to 1 (el), j
= 1 to m / 2 or m / 2 + 1 to m, k). In this case, for example, 1 (ell) × m / 2 pieces of EF data (i, j, k) (i = 1 to 1 (ell), j = 1 to m /
2, k) is developed in one development part, and l (ell) × m / 2
EF data (i, j, k) (i = 1 to l (ell),
j = m / 2 + 1 to m, k) are developed by another developing unit. Then, for example, the crossbar 420 and the FIFO memory 4
30 are provided, and the first set of crossbars 420 and FI
The EF data (i,
j, k) (i = 1 to 1 (ell), j = 1 to m / 2, k)
And the EF data (i, j, k) expanded by the second set of crossbars 420 and FIFO memory 430
By handling (i = 1 to l (ell) and j = m / 2 + 1 to m, k), EF data (i, j, k) (i = 1 to l
(L), j = 1 to m, k) can be stored simultaneously.

Further, the above idea is extended to l (L) ×
The EF data (i, j, k) for controlling the m blankers 32 at the same time is divided into a plurality of groups, and one unit dot control data is generated by the EF data (i, j, k) belonging to one group. May be configured. In this case, for example,
Crossbars 420 and FIFOs corresponding to the number of groups
By providing the memory 430, the EF of each group for controlling the 1 (ell) × m blankers 32 at the same time for the 1 (ell) × m shift registers 450 is provided.
Data (i, j, k) can be stored simultaneously.

Further, for example, the expansion processing unit may have 1 (L) ×
By providing m developing units and RAM, l (ell) × m dot control data for controlling 1 (ell) × m blankers are respectively stored in the 1 (ell) × m developing unit and RAM. It can be deployed in parallel.

Further, in the above-described embodiment, an example is described in which the expansion processing unit 410 includes eight expansion units and a RAM. However, the number is not limited to eight and can take various values. .

[Second Embodiment] Hereinafter, a second embodiment of the present invention will be described.
An embodiment will be described.

FIG. 19 is a diagram showing a second example of the format of the exposure control data generated by the information processing apparatus 200. In FIG. 19, only one piece of partial exposure control data for controlling the exposure of one subfield (SF) is shown for convenience of description, but all the exposure control data includes all the subfields (SF). A plurality of partial exposure control data for controlling exposure of SF) is included.

The partial exposure control data for one subfield (SF) according to this embodiment includes a subfield number 501, a stage reference position 502, a main deflector reference position 503, a sub deflector reference position 504, a main deflection. Stage follow-up data 505 and dose control data 510 are included.

The subfield number 501 is a number for specifying a subfield (SF). The stage reference position 502 is a reference position of the XY stage 11 at the time of exposure of the subfield. The main deflector reference position 503 is a reference (or a reference of the amount of deflection) of a position at which the electron beam deflected by the main deflector of the deflector 6 enters the XY stage 11 during the exposure of the subfield. The sub-deflector reference position 504 is a reference (or a reference of the amount of deflection) of a position at which the electron beam deflected by the sub-deflector of the deflector 6 at the time of exposure of the subfield is incident on the XY stage 11.
It is. The XY stage 1 driven in the y direction when scanning the substrate 5 with a plurality of electron beams to draw a pattern on the substrate 5
This is data for controlling the main deflector of the deflector 6 so that the plurality of electron beams follow the movement of one.

The dose control data 510 includes compressed first to n-th unit dose control data 510-1 to 510-n.
including. Here, it is preferable that the first to n-th unit dose control data constituting the dose control data 510 are arranged in the order used in the electron beam exposure apparatus 100 when controlling the exposure. This is to enable the electron beam exposure apparatus 100 to develop a plurality of unit dose control data sequentially from the top of the exposure control data. However, such an array of unit dose control data is not an essential matter for implementing the present invention,
For example, by adding pointer information or the like for specifying the address of each compressed unit dose control data to the exposure control data, the electron beam exposure apparatus 100 converts necessary unit dose control data based on the pointer information. It can be extracted from the exposure control data and developed.

FIG. 20 is a diagram showing a configuration example of each unit dose control data. One unit dose control data is, for example, the number of electron beams for executing exposure of one subfield (SF), that is, the elementary electron optical system array 3.
Number of element electron optical systems provided in (Blanker array BA
The number of EF data (i, j, k) equal to the number of blankers provided in (i), and the value of k includes the common EF data (i, j, k). Here, in this embodiment, the EF data (i, j, k) includes a time (including a dose of 0) for irradiating the substrate 5 with an electron beam corresponding to the element electron optical system in the i-th row and the j-th column. ), That is, the k-th data group for controlling the time for turning off the blanker in the i-th row and j-th column provided in the blanker array BA.

In the examples shown in FIGS. 1, 2, 4, 5, and 8, the element electron optical system array 3 is composed of 8 rows × 8 columns of element electron optical systems. That is, 1 (ell) and m are 8. In addition, the element electron optical system array has various numbers, such as an element electron optical system of 16 rows × 16 columns, an element electron optical system of 160 rows × 160 columns, etc., in addition to the element electron optical system of 8 rows × 8 columns. Can be constituted by the element electron optical system.

The number n of unit dose control data constituting one dose control data 510 (ie, the division number of the dose control data) is determined, for example, by the number of elements of a matrix constituting one element exposure area (EF) (see FIG. In the example shown in FIG.
(Row × 8 columns = 64). In this case, exposure of one element of one element exposure area (EF) (k-th element in one element exposure area) is executed according to one dose control data.

Note that the number of unit dose control data constituting one dose control data 510 is not limited to the above example, and can be changed as appropriate.

Referring to FIG. 9, the control data generation unit 202 controls the l (row) × m column elementary electron optical system (blanker) for each subfield (SF) based on the exposure pattern data. (M) dose control data (here, one dose control data continuously controls the time for turning off the blanker of one elementary electron optical system during exposure of one subfield. (Which means time series data).

Next, conversion section 203 divides each dose control data into n parts. As a result, from 1 (ell) × m control data, 1 (ell) × m × n EF data (i, j, k) (i = 1 to 1 (ell), j = 1 to m, k
= 1 to n) are generated.

Next, in the compression section 204, l (ell) ×
mxn EF data (i, j, k) (i = 1 to 1 (ell), j = 1 to m, k = 1 to n) are compressed. here,
EF data (i, j, k) having the same value of k (i = 1 to l
(L), j = 1 to m) may be combined in a predetermined order, and then the combined EF data group may be subjected to compression processing.

Next, the exposure control data generation unit 205
The EF data (i, j, k) after compression and other data are integrated to generate exposure control data shown in FIGS. Here, in the examples shown in FIG. 19 and FIG. 20, one unit dot control data is represented by l (L) having the same value of k.
X m EF data (i, j, k), the electron beam exposure apparatus 100 allows
EF data (i, j, k) for simultaneously controlling m blankers can be simultaneously developed (reproduced).

FIG. 21 is a diagram showing a configuration example of the blanker array control circuit 111 according to this embodiment. The blanker array control circuit 111 according to this embodiment includes a development processing unit 610, a crossbar 620, a FIFO memory 630, a temporary register 640, and a blanker 32.
(CVT) 650 and drivers 6 as many as the number of
60 and a data controller 670.

The expansion processing section 610 includes first to eighth expansion sections 611-1 to 611 as a plurality of expansion processing sections and RAM.
-8 and first to eighth RAMs 621-2 to 612-8. The first to eighth developing units 611-1 to 611-8 respectively control the interface 12 according to a control signal (Expcntl) supplied from the data controller 670.
2 and the corresponding unit dose control data in the exposure control data from the memory 121 via the sub control unit 120, and stores the unit dose control data in the first to eighth RAMs 612.
-1 to 612-8 are developed on the corresponding RAM.

The crossbar 620 outputs a control signal (selection signal Select) supplied from the data controller 670.
According to t), the first to eighth RAMs 622-1 to 612-612
8 is selected and the expanded unit dose control data in the selected RAM is stored in the FIFO memory 630.
To provide. Here, the first to eighth RAMs 612-1 to 612-6
12-8 each represent l (ell) × m EF data (i, j, k) as expanded unit dose control data.
(I = 1 to 1 (ell), j = 1 to m, k) are output in parallel.

The FIFO memory 630 stores a control signal (write signal wr) supplied from the data controller 670.
unit), the unit dose control data supplied from the crossbar 620, that is, l (ell) × m EF data (i, j, k) (i = 1 to l (el), j = 1 to m,
k) is stored. Then, in accordance with the control signal (read signal read) supplied from the data controller 670, the FIFO memory 630 supplies unit dose control data that has been input first and has not yet been output, that is, l (L) ×
It outputs m EF data (i, j, k) (i = 1 to 1 (ell), j = 1 to m, k).

The temporary register 640 controls the control signal (Tmp Re) supplied from the data controller 670.
g Load), the unit dose control data supplied from the FIFO memory 630, that is, 1 (ell) × m EF data (i, j, k) (i = 1 to 1 (el), j
= 1 to m, k) are loaded and output.

The 1 (l) × m converters 650 are provided by l
(L) × m blankers 32 are provided correspondingly. Each converter 650 includes a temporary register 640
(E) × m EF data (i,
j, k) (i = 1 to 1 (ell), j = 1 to m, k), the corresponding EF data (i, j, k) is converted into a control signal (Convert) supplied from the data controller 670.
Start), pulse width conversion (modulation) is performed.
Specifically, for example, the converter 650 corresponding to the blanker 32 of i = 1 and j = 1 converts the EF data (1,1, k) output from the temporary register 640 into a pulse width and converts the pulse signal into a pulse signal. Generate.

The pulse signal output from each converter 650 is supplied to the corresponding blanker 32 via the corresponding driver 660, whereby the blanker 32 is turned off for a time corresponding to the pulse width, and the corresponding electronic device is turned off. The beam is irradiated on the substrate 5.

In this embodiment, each unit dose control data is EF data (i, j, k) for controlling all the l (m) × m blankers 32 at the same time, ie, k
L (m) × m EF data (i, j,
k) (i = 1 to 1 (ell), j = 1 to m, k). That is, in this configuration example, l (ell) × m pieces of EF data (i, j, k) having the same value of k are stored in any one of the first to eighth expansion units 611-1 to 611-8. The data is simultaneously expanded on the corresponding RAM by the expansion unit and supplied to the FIFO memory 630 at the same time. According to this configuration example, for example, the number of expansion units and the number of FIFO memories can be reduced. However, as described below,
An implementation format that is not based on such a premise can be adopted.

FIG. 22 is a timing chart showing the operation of blanker array control circuit 111 shown in FIG.
As shown in FIG. 22, in the expansion processing unit 610 of the blanker array control circuit 111 according to this embodiment, the memory 121 is controlled by the first to eighth expansion units 611-1 to 611-8.
Load the corresponding unit dose control data from
Then, "load1", "load2", "load
3 "..." Load8 "), expansion processing (" expand1 "," expand2 "," ex "in FIG. 22).
.., “expand8”), store processing to the RAM (“store1”, “stoo” in FIG. 22)
re2 "," store3 "..." store8 ")
Are executed in parallel.

In the cross bar 620, a control signal (selection signal Select) supplied from the data controller 670 is provided.
According to t), the first to eighth RAMs 622-1 to 612-612
8 are sequentially selected, and the RA
The developed unit dose control data in M is output. Note that, as in the example shown in FIG. 18 according to the modification of the first embodiment, by loading the unit dose control data into one development section within one period, the eight development sections 611-1 are loaded.
To 611-8 may share a bus for connecting to the memory 121.

In the example shown in FIG.
Selects eight RAMs (developing units) at a cycle of 20 ns. That is, one RAM (development unit) is selected once every 8 × 20 ns. Therefore, in this example, each developing unit may complete the loading, developing, and storing processing of one unit dose control data within 8 × 20 ns. On the other hand, when the same drawing speed as that of this example is achieved by a single developing unit as in the related art, the loading, developing, and storing processes of data corresponding to one unit dose control data are completed within 20 ns. There is a need. In other words, in this embodiment, assuming that the number of expansion units is ne, each expansion unit
The data can be loaded, expanded, and stored using ne times as long as the conventional method.

Next, a control procedure of the blanker array control circuit 111 by the data controller 670 will be described with reference to FIGS.

FIG. 23 is a flowchart showing a control procedure of the expansion processing unit 610 by the data controller 670. In step S601, the first to eighth developing units 611
-1 to 611-8 are loaded with separate unit dose control data. In step S602, the first to eighth expansion units 611-1 to 611-8 are caused to execute the expansion processing in parallel. In step S603, the unit dose control data that has been developed is stored in the first to eighth RAMs 621-2 to 612-8.
And returns to step S601.

FIG. 24 is a flowchart showing a control procedure of a writing process to the FIFO memory 630 by the data controller 670. In step S611, the parameter sn is initialized to "1". Step S
612, the first to eighth RAMs 622-1 to 612-8
Of the snth RAM is selected by the crossbar 620,
In step S613, the developed unit dose control data is read from the selected RAM, and written to the FIFO memory 630.

In the step S614, the FIFO memory 6
It is determined whether or not the next unit dose control data can be written to 30. If the next unit dose control data cannot be written, the next unit dose control data is read from the FIFO memory 630 to read the next unit dose control data. Wait until writing of the unit dose control data becomes possible.

In the step S615, the parameter sn
Is added to "1". In step S616, sn = 9
Is determined, and if sn = 9, step S6 is performed.
11, the sn is initialized to "1" again, and sn = 9
If not, the process returns to step S612.

FIG. 25 is a flowchart showing a control procedure of the reading process from the FIFO memory 630 by the data controller 670. In step S621,
The unit dose control data written first is read from the FIFO memory 630, and in step S622, the unit dose control data is stored in the temporary register 640. In step S623, the EF data (i, j, k) (i = 1 to 1 (el), j = j) constituting the unit dose control data stored in the temporary register 640.
1 to m) are subjected to pulse width conversion by the corresponding converter 650 among the 1 (m) × m converters 650, and supplied to the corresponding blanker via the corresponding driver 660.

The above embodiment is merely one application example of the present invention, and another configuration example can be adopted.

For example, EF data (i, i) for controlling all (l) × m / 2 blankers 32 at the same time.
j, k), that is, l (el) × m / 2 EF data (i, j, k) (i = 1 to 1 (el), j
= 1 to m / 2 or m / 2 + 1 to m, k). In this case, for example, 1 (ell) × m / 2 pieces of EF data (i, j, k) (i = 1 to 1 (ell), j = 1 to m /
2, k) is developed in one development part, and l (ell) × m / 2
EF data (i, j, k) (i = 1 to l (ell),
j = m / 2 + 1 to m, k) are developed by another developing unit. Then, for example, the crossbar 620 and the FIFO memory 6
30 are provided, and the first set of crossbars 620 and FI
The EF data (i,
j, k) (i = 1 to 1 (ell), j = 1 to m / 2, k)
EF data (i, j, k) expanded by the second set of crossbars 620 and FIFO memory 630
By handling (i = 1 to 1 (el), j = m / 2 + 1 to m, k), the EF data (i, j, k) (i = 1 to 1 (ell), j = 1 to m, k) can be simultaneously provided.

Further, the above idea is extended to l (L) ×
The EF data (i, j, k) for controlling the m blankers 32 at the same time is divided into a plurality of groups, and one unit dose control data is generated by the EF data (i, j, k) belonging to one group. May be configured. In this case, for example,
Crossbars 420 and FIFOs corresponding to the number of groups
By providing the memory 430, a plurality of converters 650 can be provided.
In contrast, EF data (i, j, k) of each group for controlling l (ell) × m blankers 32 at the same time
Can be provided at the same time.

Further, for example, l (L) ×
By providing m development units and RAMs, l (ell) × m dose control data for controlling 1 (ell) × m blankers are respectively stored in the 1 (ell) × m development units and RAM. It can be deployed in parallel.

Further, in the above-described embodiment, an example is described in which the expansion processing unit 610 includes eight expansion units and a RAM, but the number is not limited to eight, and can take various values. .

[Third Embodiment] Hereinafter, a third embodiment of the present invention will be described.
An embodiment will be described. In this embodiment, a plurality of developing units perform a process of developing deflection control data for controlling the deflector 6. This embodiment can be combined with the first or second embodiment.

FIG. 26 is a diagram showing an example of a format of deflection control data that can be included in exposure control data generated by the information processing apparatus 200. This deflection control data is, for example, as the main deflection stage follow-up data 306 of the exposure control data shown in FIG. 10 or the main deflection stage follow-up data 505 of the exposure control data shown in FIG. 19, or together with the main deflection stage follow-up data 306 or 505. Can be used.

The deflection control data shown in FIG.
And includes compressed first to n-th unit deflection control data. The value of n can be arbitrarily determined.

It is preferable that the first to n-th unit deflection control data constituting the deflection control data are arranged in the order used in the exposure control in the electron beam exposure apparatus 100. This is to enable the electron beam exposure apparatus 100 to develop a plurality of unit deflection control data in order from the head of the deflection control data. However, such an array of unit deflection control data is not indispensable for practicing the present invention. For example, pointer information or the like specifying the address of each compressed unit deflection control data is included in the exposure control data. With the addition, in the electron beam exposure apparatus 100, necessary unit deflection control data can be extracted from the exposure control data and expanded based on the pointer information.

Referring to FIG. 9, the control data generation unit 202 determines the deflector 6 based on the exposure pattern data.
Of deflection control data for controlling the deflection. Then
The conversion unit 203 divides the deflection control data into n,
The n-th unit deflection control data is generated. Next, the compression unit 2
In step 04, the first to n-th unit deflection control data are compressed.
Next, the exposure control data generation unit 205
To n-th unit deflection control data and other data (for example,
Exposure control data is generated by integrating dot control data or dose control data. Each of the first to n-th unit deflection control data may include a plurality of data for controlling a plurality of deflecting units (for example, a main deflector and a sub deflector) which can constitute the deflector 6.

FIG. 27 is a diagram showing a configuration example of the deflection control circuit 115 according to this embodiment. The deflection control circuit 115 according to this embodiment includes an expansion processing unit 710, a crossbar 720, a FIFO memory 730, a temporary register 740, a DA converter 750, and a data controller 770. Here, when the deflector 6 includes a plurality of deflecting units, DA converters 750 corresponding to the number of deflecting units may be provided, and each deflecting unit may be controlled based on the deflection control data. Here, it is assumed that the number of DA converters 750 for simplifying the description is one.

The expansion processing section 710 includes a plurality of expansion processing sections and a RAM as first to eighth expansion sections 711-1 to 711.
-8 and first to eighth RAMs 712-1 to 712-8. The first to eighth developing units 711-1 to 711-8 respectively control the interface 12 according to a control signal (Expcntl) supplied from the data controller 770.
2 and the corresponding unit deflection control data in the exposure control data from the memory 121 via the sub control unit 120, and stores the unit deflection control data in the first to eighth RAMs 712 to 712.
The data is expanded on the corresponding RAM among 1-712-8.

The crossbar 720 controls the control signal (selection signal Select) supplied from the data controller 770.
According to t), the first to eighth RAMs 722-1 to 712-712
8 is selected and the expanded unit deflection control data in the selected RAM is provided to the FIFO memory 730.

The FIFO memory 730 stores a control signal (write signal wr) supplied from the data controller 770.
According to item (item), the unit deflection control data supplied from the crossbar 720 is stored. Then, the FIFO memory 730 outputs the unit deflection control data that has been input first and has not yet been output according to the control signal (read signal read) supplied from the data controller 770.

The temporary register 740 controls the control signal (Tmp Re) supplied from the data controller 770.
g Load), and loads and outputs the unit deflection control data supplied from the FIFO memory 730.

The DA converter 750 starts the process of converting the unit deflection control data output from the temporary register 740 into an analog signal according to the control signal (DAC Start) supplied from the data controller 770. Then, the DA converter 750 controls the control signal (Hold out) supplied from the data controller 770.
According to t), the converted analog signal is held and output. This analog signal is supplied to the deflector 6, which controls the deflector 6. .

FIG. 28 shows the deflection control circuit 11 shown in FIG.
6 is a timing chart showing the operation of FIG. As shown in FIG. 28, the expansion processing unit 710 of the deflection control circuit 115 according to the present embodiment includes first to eighth expansion units 711-1 to 711-1.
According to 711-8, the corresponding unit deflection control data is loaded from the memory 121 ("load" in FIG. 28).
1 ”,“ load2 ”,“ load3 ”,...) And expansion processing (“ expand1 ”,“ expan
d2 "," expand3 "...), and store processing to the RAM (in FIG. 28," store1 "," store1 ").
2 "," store3 "...) Are executed in parallel.

The crossbar 720 controls the control signal (selection signal Select) supplied from the data controller 770.
According to t), the first to eighth RAMs 722-1 to 712-712
8 are sequentially selected, and the RA
The developed unit deflection control data in M is output. Note that, as in the example shown in FIG. 18 according to the modification of the first embodiment, by loading the unit deflection control data into one developing unit within one period, the eight developing units 711-1 to 711-1 are loaded.
In 711-8, a bus for connecting to the memory 121 may be shared.

In the example shown in FIG.
Selects eight RAMs (developing units) at a cycle of 20 ns. That is, one RAM (development unit) is selected once every 8 × 20 ns. Therefore, in this example, each developing unit may complete the loading, developing, and storing processing of one unit deflection control data within 8 × 20 ns. on the other hand,
To achieve the same drawing speed as in this example with a single developing unit as in the past, it is necessary to complete the loading, developing, and storing processes of data corresponding to one unit deflection control data within 20 ns. is there. In other words, in this embodiment, assuming that the number of development units is ne, each of the development units loads, expands,
Store processing can be performed.

Next, a control procedure of the deflection control circuit 115 by the data controller 770 will be described with reference to FIGS.

FIG. 29 is a flowchart showing a control procedure of the expansion processing unit 710 by the data controller 770. In step S701, the first to eighth developing units 711
-1 to 711-8 are loaded with separate unit deflection control data. In step S702, the first to eighth developing units 7
11-1 to 711-8 are executed in parallel. In step S703, the developed unit deflection control data is stored in the first to eighth RAMs 712-1 to 712-8, and the process returns to step S701.

FIG. 30 is a flowchart showing a control procedure of a writing process to the FIFO memory 730 by the data controller 770. In step S711, the parameter sn is initialized to "1". Step S
In 712, the first to eighth RAMs 722-1 to 712-8
Of the snth RAM is selected by the crossbar 720,
In step S713, the developed unit deflection control data is read from the selected RAM, and
Write 30.

In the step S714, the FIFO memory 7
It is determined whether or not the next unit deflection control data can be written to the memory 30. If the next unit deflection control data cannot be written, the next unit deflection control data is read from the FIFO memory 730 to read the next unit deflection control data. Wait until the unit deflection control data can be written.

In step S715, the parameter sn
Is added to "1". In step S716, sn = 9
Is determined, and if sn = 9, step S7 is performed.
11, the sn is initialized to "1" again, and sn = 9
If not, the process returns to step S712.

FIG. 31 is a flowchart showing a control procedure of the reading process from the FIFO memory 730 by the data controller 770. In step S721,
The unit deflection control data written first is read out from the FIFO memory 730, and the unit deflection control data is stored in the temporary register 740 in step S722. In step S723, the temporary register 74
0 is stored in the DA converter 75
The conversion to an analog signal is started by 0, and the analog signal related to the conversion is held and output to the deflector 6 in step S724.

Further, in the above-described embodiment, an example is described in which the expansion processing unit 610 includes eight expansion units and a RAM. However, the number is not limited to eight and can take various values. .

[Device Manufacturing Method] Next, an example of a device manufacturing method using the electron beam exposure apparatus 100 according to each of the above embodiments will be described.

FIG. 32 is a diagram showing a flow of manufacturing micro devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin film magnetic heads, micro machines, etc.). In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (exposure control data creation), the information processing apparatus 200 creates exposure control data for the exposure apparatus based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the electron beam exposure apparatus 100 to which the exposure control data created in step 2 has been input. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and an assembly process (dicing,
Bonding), a packaging step (chip encapsulation), and the like. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 33 is a diagram showing a detailed flow of the wafer process shown in FIG. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD)
Then, an insulating film is formed on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition.
In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the electron beam exposure apparatus 100 to print and expose the circuit pattern onto the wafer. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

[0169]

According to the present invention, for example, by providing a plurality of expansion units, the expansion processing can be speeded up.

[Brief description of the drawings]

FIG. 1 is a schematic view of an electron beam exposure apparatus according to a preferred embodiment of the present invention.

FIG. 2 is a diagram showing a detailed configuration of an elementary electron optical system array.

FIG. 3 is a diagram showing one deflector extracted from a blanker array.

FIG. 4 is a view of the blanker array viewed from below.

FIG. 5 is a diagram illustrating first and second electron optical system arrays.

FIG. 6 is a diagram illustrating the function of an elementary electron optical system array.

7 is a diagram showing a configuration of a control system of the electron beam exposure apparatus shown in FIG.

FIG. 8 is a view for explaining the principle of exposure by the electron beam exposure apparatus shown in FIG.

FIG. 9 is a diagram showing a configuration of an exposure system according to a preferred embodiment of the present invention.

FIG. 10 is a diagram illustrating an example of a format of exposure control data generated by the information processing apparatus according to the first embodiment.

11 is a diagram showing a configuration example of each unit dot control data in FIG. 10;

FIG. 12 is a diagram illustrating a configuration example of a blanker array control circuit according to the first embodiment;

13 is a timing chart showing an operation of the blanker array control circuit shown in FIG.

FIG. 14 is a diagram showing a relationship among a temporary register, a shift register, and a blanker.

FIG. 15 is a flowchart illustrating a control procedure of the expansion processing unit by the data controller according to the first embodiment.

FIG. 16 is a flowchart illustrating a control procedure of a writing process to the FIFO memory by the data controller according to the first embodiment.

FIG. 17 is a flowchart illustrating a control procedure of a reading process from a FIFO memory by the data controller according to the first embodiment.

FIG. 18 is a timing chart showing a control method for improving the efficiency of processing for loading unit dot control data from a memory into each development unit.

FIG. 19 is a diagram illustrating an example of a format of exposure control data generated by the information processing apparatus according to the second embodiment.

20 is a diagram showing a configuration example of each unit dose control data shown in FIG. 19;

FIG. 21 is a diagram illustrating a configuration example of a blanker array control circuit according to a second embodiment;

FIG. 22 is a timing chart showing an operation of the blanker array control circuit shown in FIG.

FIG. 23 is a flowchart illustrating a control procedure of the expansion processing unit by the data controller according to the second embodiment.

FIG. 24 is a flowchart illustrating a control procedure of a writing process to a FIFO memory by the data controller according to the second embodiment.

FIG. 25 is a flowchart illustrating a control procedure of a reading process from a FIFO memory by the data controller according to the second embodiment.

FIG. 26 is a diagram illustrating an example of a format of deflection control data that can be included in exposure control data generated by the information processing apparatus according to the third embodiment.

FIG. 27 is a diagram illustrating a configuration example of a deflection control circuit according to a third embodiment;

28 is a timing chart showing the operation of the deflection control circuit shown in FIG.

FIG. 29 is a flowchart illustrating a control procedure of the expansion processing unit by the data controller according to the third embodiment.

FIG. 30 is a flowchart showing a control procedure of a writing process to a FIFO memory by the data controller according to the third embodiment.

FIG. 31 is a flowchart illustrating a control procedure of a reading process from a FIFO memory by the data controller according to the third embodiment.

FIG. 32 is a view showing a flow of manufacturing micro devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.).

FIG. 33 is a diagram showing a detailed flow of the wafer process shown in FIG. 32;

FIG. 34 is a view showing a schematic configuration of a conventional charged particle beam exposure apparatus.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 electron gun 2 condenser lens 3 element electron optical system array 4 reduction electron optical system 5 substrate 6 deflector 7 dynamic focus coil 8 dynamic stig coil 9 θ-Z stage 10 reference plate 11 XY stage 12 reflected electron detector 32 blanker 100 electron Beam exposure apparatus 110 CL control circuit 111 BA control circuit 112 LAU control circuit 113 D_STIG control circuit 114 D_FOCUS control circuit 115 Deflection control circuit 116 Optical characteristic control circuit 117 Backscattered electron detection circuit 118 Stage drive control circuit 120 Control system 121 Memory 122 Interface 123 CPU AA aperture array BA blanker array LAU element electron optical system array unit SA stopper array

Claims (28)

[Claims] 1. A charged particle beam exposure apparatus having a control element for controlling an operation of drawing a pattern on a substrate by using a charged particle beam, wherein exposure control data including a plurality of compressed unit control data is stored. A storage unit, a plurality of expansion units for extracting and expanding compressed unit control data from the exposure control data stored in the storage unit, and a plurality of unit control data expanded by the plurality of expansion units. A charged particle beam exposure apparatus, comprising: a control unit that controls the control element. 2. The charged particle beam exposure apparatus according to claim 1, wherein the plurality of developing units execute a developing process in parallel. 3. The charged particle beam exposure apparatus according to claim 1, wherein the plurality of decompressors load the compressed unit control data from the storage during different periods. 4. The control device according to claim 1, further comprising: a selection unit that selects a plurality of unit control data developed by the plurality of development units in an order used when controlling the control element and provides the selected control data to the control unit. The charged particle beam exposure apparatus according to any one of claims 1 to 3, wherein: 5. The exposure control data according to claim 1, wherein the plurality of compressed unit control data are arranged in an order used when controlling the control element. The charged particle beam exposure apparatus according to any one of the above. 6. The apparatus further comprising a charged particle source for generating a plurality of charged particle beams, wherein the control element includes a plurality of irradiation control units for individually controlling irradiation of the plurality of charged particle beams on a substrate. The charged particle beam exposure apparatus according to any one of claims 1 to 5, wherein: 7. The charged particle beam exposure apparatus according to claim 6, wherein each of the irradiation controllers controls whether or not to irradiate the substrate with a charged particle beam. 8. The irradiation control unit according to claim 6, wherein each of the irradiation control units controls a time for irradiating the substrate with the charged particle beam.
2. The charged particle beam exposure apparatus according to 1. 9. The charged particle beam exposure apparatus according to claim 6, wherein each of the irradiation control units includes a blanker for controlling whether or not to deflect the charged particle beam. 10. The charged particle beam according to claim 6, wherein each of the unit control data includes data for controlling the plurality of irradiation control units. Exposure equipment. 11. The apparatus according to claim 6, wherein each of the unit control data includes data for controlling all of the plurality of irradiation control units within the same period. 2. The charged particle beam exposure apparatus according to 1. 12. The charged particle beam exposure apparatus according to claim 1, wherein the control element includes a deflector for scanning the substrate with a charged particle beam. 13. The charging device according to claim 1, further comprising an exposure control data generation unit that generates the exposure control data based on a pattern to be drawn on a substrate. Particle beam exposure equipment. 14. A control method of a charged particle beam exposure apparatus having a control element for controlling an operation of drawing a pattern on a substrate by a charged particle beam, comprising: exposure control data including a plurality of compressed unit control data. A decompressing step of causing each of a plurality of decompressing units to extract and decompress unit control data compressed from the decompressing unit, and controlling the control element according to the plurality of unit control data decompressed in the decompressing step. A method for controlling a charged particle beam exposure apparatus, comprising: 15. The control method for a charged particle beam exposure apparatus according to claim 14, wherein in the developing step, the plurality of developing units execute a developing process in parallel. 16. The development step, wherein the plurality of development units are loaded with compressed unit control data from storage units storing the exposure control data during different periods from each other. 16. The control method of the charged particle beam exposure apparatus according to 14 or 15. 17. The method according to claim 1, further comprising a selecting step of selecting a plurality of unit control data to be developed by the plurality of developing units in the developing step in an order used when controlling the control element and providing the selected unit control data to the control step. The method of controlling a charged particle beam exposure apparatus according to claim 14, wherein 18. The exposure control data, wherein the plurality of compressed unit control data are arranged in an order used when controlling the control element. The control method of the charged particle beam exposure apparatus according to any one of the above. 19. The charged particle beam exposure apparatus further comprises a charged particle source for generating a plurality of charged particle beams, and the control element individually controls irradiation of the plurality of charged particle beams on a substrate. The control method for a charged particle beam exposure apparatus according to any one of claims 14 to 18, comprising a plurality of irradiation control units. 20. The control method for a charged particle beam exposure apparatus according to claim 19, wherein each of the irradiation control units controls whether or not to irradiate the substrate with a charged particle beam. 21. The control method of a charged particle beam exposure apparatus according to claim 19, wherein each of said irradiation control units controls a time period during which said substrate is irradiated with a charged particle beam. 22. The control method for a charged particle beam exposure apparatus according to claim 19, wherein each of said irradiation control units includes a blanker for controlling whether or not to deflect the charged particle beam. 23. The charged particle beam according to claim 19, wherein each of the unit control data includes data for controlling the plurality of irradiation control units. An exposure apparatus control method. 24. The apparatus according to claim 19, wherein the unit control data includes data for controlling all of the plurality of irradiation control units within the same period. 3. The method for controlling a charged particle beam exposure apparatus according to item 1. 25. The charged particle beam exposure apparatus according to claim 14, wherein the control element includes a deflector for scanning the substrate with a charged particle beam. Control method. 26. An exposure control data generating step of generating the exposure control data based on a pattern to be drawn on a substrate.
The control method of the charged particle beam exposure apparatus according to any one of the above. 27. A device manufacturing method comprising the step of drawing a pattern on a substrate while controlling a charged particle beam exposure apparatus by the control method according to claim 14. Description: Method. 28. A method for manufacturing a device using a charged particle beam exposure apparatus having a control element for controlling an operation of drawing a pattern on a substrate by using a charged particle beam as part of a process, wherein the charged particle beam In the exposure apparatus, a developing step of extracting a plurality of compressed unit control data from exposure control data including a plurality of compressed unit control data, and causing each of a plurality of developing units to perform the developing process, And a drawing step of drawing a pattern on a substrate while controlling the control elements in accordance with the plurality of unit control data developed in the step (a).