JP2001067175A - Resistance film type touch panel and its producing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a durability, a reliability and wiring rationality by constituting a touch side transparent resistance film sheet by successively laminating a silane coupling agent layer, a cilicon oxide layer 12 and a transparent resistance film layer on one surface of a transparent resin film. SOLUTION: The touch side transparent resistance sheet 1 is constituted by successively laminating the silane coupling agent layer 11, the cilicon oxide layer 12 and the transparent resistance film layer 2 on one front surface of the transparent resin film 10. A non-conductive area 16 where the transparent resistance films layer on the front surface of the sheet is removed is formed in the peripheral edge of the sheet, first and second lead electrodes which are respectively led out of a pair of electrodes are formed in the area 16, and at least one of the first and second lead electrodes circulates a conductive area without being brought into contact with the conductive area where the resistance film is formed. The one of lead electrodes is formed and arranged to permit its tip part to approach the tip part of the other lead electrode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistive transparent touch panel.

[0002]

[Prior art]

[0003] A resistive touch panel has a structure in which two substrates each having a transparent resistive film formed on the inner surface thereof are overlapped with an insulating dot spacer interposed therebetween. When a specific portion is pressed by a finger or the like, the touch-side resistive film and the display-side resistive film are brought into contact with each other at the pressed point to conduct electricity. In the touch panel having this structure, a change in the voltage value at the contact point when the upper and lower resistive films come into contact is measured, and the position coordinates of the pressed point are detected based on the result. Therefore, in the touch panel having this structure, stress deformation occurs on the touch-side substrate each time the touch panel is used (every time the position is detected), and the upper and lower resistive films repeatedly and repeatedly contact and separate. For this reason, the touch panel having this structure is liable to deteriorate in performance due to peeling and abrasion of the resistive film.

[0004] Conventionally, a resin film such as a polyethylene terephthalate film has been used as a touch-side substrate of this type of touch panel because it is flexible and easily deformed by stress. Further, as the resistance film, an ITO (Indium Tin Oxide) film is used because it has flexibility, transparency, and appropriate electric resistance.
Further, a silicon oxide layer (about 0.05 to 0.1 μm thick) is interposed between the resin film and the resistive film in order to enhance the binding between the ITO film and the resin film and improve the visibility. Technology is used. The following method is employed as a manufacturing method.

First, a silicon oxide layer is formed on the entire surface of a belt-like resin film by a sputtering method, a CVD method, or the like. An ITO layer is formed on the entire surface of the silicon oxide layer by an evaporation method or the like. Thus, a resin film with a resistive film is completed. Therefore, cut this into a predetermined size and make a sheet,
The resistive film on the peripheral edge of this sheet is removed by a wet etching method or a laser etching method to form a touch-side resistive film sheet (touch-side member). A display-side member is manufactured in substantially the same manner as described above except that a glass substrate is used instead of the resin film. Next, an insulating spacer is interposed between the touch-side member and the display-side member, and the touch-side member and the display-side member are overlapped so that the voltage application directions of the resistive films on the touch side and the display side intersect with each other. Finalize.

According to the above-described manufacturing method in which a silicon oxide layer is interposed between a resin film and a resistive film, the binding between the resistive film and the substrate is improved as compared with the case where the resistive film is directly formed on the resin film. However, even if this technique is used, the structural problem of the resistive touch panel that performance is likely to be deteriorated due to peeling or abrasion of the resistive film cannot be sufficiently solved. That is, if the processing of the resistive film sheet is performed by the wet etching method in the above-described manufacturing method, the binding property and adhesion between the resin film and the silicon oxide layer are reduced, so that sufficient durability cannot be obtained. On the other hand, according to the laser etching method,
Irregularities (burrs) are generated on the processed cross section (edge portion), and powder chips are generated. The generation of fuzz or swarf causes problems such as deterioration of durability in writing input and poor appearance due to foreign matter defects, and impairs durability and reliability.

[0007]

DISCLOSURE OF THE INVENTION The present invention has been made in view of the above circumstances, and further improves the binding and adhesion between a resin film and a silicon oxide layer or a resistive film. By devising a laminated structure of resistive film sheet with excellent processing characteristics, which does not deteriorate and does not generate chips etc. even by laser etching, durability and reliability can be achieved by using this structured sheet on the touch side sex,
An object of the present invention is to provide a resistive touch panel excellent in wiring rationality and the like.

[0008]

The present invention for achieving the above object is constituted as follows. According to the first aspect of the present invention, the touch-side transparent resistance film sheet having a transparent resistance film formed on the surface and the display-side transparent resistance film sheet having a transparent resistance film formed on the surface have the transparent resistance film surface inside. In a resistive touch panel that is disposed so as to intersect with a voltage application direction and interpose a dot spacer therebetween, the touch-side transparent resistive film sheet has a silane coupling agent on one surface of a transparent resin film. Characterized in that a layer, a silicon oxide layer, and a transparent resistance film layer are sequentially laminated.

In the touch-side transparent resistive sheet having the above-described structure, the silane coupling agent layer functions as a layer that strongly binds the silicon oxide layer to the surface of the transparent resin film. Also, the silicon oxide layer lowers the refractive index of the entire touch panel,
In addition to acting to improve visibility, it functions as a layer for firmly binding the resistive film layer to the resin film via the silane coupling agent layer. Therefore, according to the above configuration, peeling of the resistive film (including partial peeling and falling off of small pieces)
Therefore, it is possible to realize a resistive touch panel that suppresses performance deterioration due to the above and has excellent visibility.

According to a second aspect of the present invention, a pair of electrodes (3, 3 ') for applying a voltage to the transparent resistive film (2) on the surface and opposing ends of the transparent resistive film are applied to the resistive film. The transparent resistance film sheet (1) on the touch side, on which a transparent resistance film (8) is formed on the surface, and a pair of electrodes for applying a voltage to the resistance film are formed on opposite ends of the transparent resistance film. The display side transparent resistive film sheet is the transparent resistive film surface (2
8), in a resistive touch panel, which is disposed oppositely with the dot spacer (6) interposed therebetween such that the voltage applying directions intersect with each other, the touch-side transparent resistive film sheet (1) is Transparent resin film (10)
A silane coupling agent layer (11), a silicon oxide layer (12), and a transparent resistive film layer (2) are sequentially laminated on one surface of the sheet. A non-conductive region (16) from which the film layer has been removed is formed. In the non-conductive region, first and second lead electrodes (13, 13 ', 1) derived from a pair of electrodes are provided.
4.14 ') is formed, and at least one of the first and second lead electrodes goes around the conductive region without contacting the conductive region on which the resistive film is formed, and the leading end of the lead electrode is connected to the other end. Is formed and arranged so as to approach the tip portion of the lead electrode.

In this configuration, a non-conductive region having an arbitrary width is formed on the periphery of the sheet, first and second lead electrodes are formed in the non-conductive region, and at least one of the first and second lead electrodes is formed. One of the lead electrodes is formed so as not to be in contact with the conductive region, and is extended so that the front end thereof approaches the front end of the other lead electrode. Here, if such a structure is adopted in the related art, problems such as peeling of the resistive film and contact between the resistive film and the lead electrode occur. This is because, in general, the boundary cross section is easier to peel than the central portion, and this tendency becomes remarkable particularly when the binding force between the resin film and the silicon oxide layer is not sufficient.

On the other hand, according to the above configuration, since the silicon oxide layer is strongly bonded to the surface of the resin film via the silane coupling agent layer, the boundary portion between the non-conductive region and the conductive region (the resistive film) (Exposed portion where the cross section is exposed) is not reduced, and the resistive film does not peel off or float. Also, there is no peeling of the lead electrode formed in the non-conductive region (16). Therefore, a resistive touch panel excellent in reliability and durability that does not cause a trouble such as a short circuit is realized. It is to be noted that peeling of the lead electrode is unlikely to occur when the resistive film and the underlying silicon oxide layer are removed together with the resistive film when the resistive film layer on the peripheral edge of the resistive film sheet is removed to form the non-conductive region (16). Even below, there is a silane coupling agent layer strongly bonded to the resin film layer below the silicon oxide layer, and the lead electrode is firmly bonded to the resin film via this silane coupling agent layer. This is because that.

Further, in the above configuration, a configuration is adopted in which the non-conductive region around the periphery of the resistive film is circulated and the leading end portions of the first lead electrode and the second lead electrode serving as external connection ends are brought close to each other. In this case, connection with an external power supply becomes easy, and external electric wiring can be simplified.

According to a third aspect of the present invention, in the resistive touch panel according to the first or second aspect, an average value of x in SiOx of the silicon oxide layer is 1.7 to 2.0. And

When the average value of x of SiOx is a silicon oxide layer having a value of 1.7 to 2.0, a transparent resistive film sheet having high transparency and a small refractive index can be formed, and the visibility of the resistive touch panel is improved. I do.

According to a fourth aspect of the present invention, in the resistive touch panel according to the first, second or third aspect, the surface roughness of the one surface of the transparent resin film is a center line average roughness Ra = 0.12. ０．２0.25 μm, 10-point average height Rz =
It is characterized by a thickness of 1.0 to 3.0 μm.

[0017]. With this configuration, the appropriate irregularities formed on the surface of the resin film prevent the generation of Newton rings. Therefore, a touch panel with more excellent visibility can be realized.

According to a fifth aspect of the present invention, a pair of electrodes (3, 3 ′) for applying a voltage to the transparent resistive film (2) on the surface and opposing ends of the transparent resistive film are applied to the resistive film. ) Formed on the touch-side transparent resistance film sheet (1), a transparent resistance film (8) on the surface, and a pair of electrodes for applying a voltage to the resistance film at opposite ends of the transparent resistance film. And the display-side transparent resistive film sheet (5) is disposed facing the transparent resistive film surface (2.8) inward with the dot spacer (6) interposed so that the voltage application directions intersect. In the method of manufacturing a resistive touch panel, the touch-side transparent resistive sheet (1) is coated with a silane coupling agent solution on one surface of a transparent resin film (10) and fixed to the silane coupling agent layer ( 11) Silane coupling Forming a silicon oxide layer to form a silicon oxide layer (12) by applying a perhydropolysilazane solution to the surface of the silane coupling agent layer (11) and chemically converting the perhydropolysilazane to silicon oxide. A step of forming a resistive film layer to form a transparent resistive film layer (2) by attaching a conductive metal to the surface of the silicon oxide layer (12);
An etching step of removing the resistive film layer near the peripheral edge of the resistive film sheet by a wet etching method or a laser etching method to form a non-conductive region (16) on the peripheral edge of the sheet; A lead electrode forming step of extending to the vicinity of the leading end of the other lead electrode through the non-conductive region without contacting the region, and disposing the leading end portions of both the lead electrodes close to each other.

The significance of each step of the above manufacturing method will be described sequentially. In the silane coupling agent layer forming step, the silane coupling agent solution is applied to the transparent resin film, whereby the silane coupling agent chemically bonds to the hydrophilic group on the resin film surface. Therefore, by this step, a layer of the silane coupling agent can be formed on the surface of the resin film. This bond is very strong because it is a bond mainly composed of a chemical bond.

In the silicon oxide layer forming step, a perhydropolysilazane solution is applied to the silane coupling agent layer. The applied perhydropolysilazane is easily chemically decomposed and changed to silicon oxide. Therefore, according to this method using a perhydropolysilazane solution, a highly transparent silicon oxide layer having an oxidation degree x (x in SiOx) of 1.9 or more can be formed with high productivity without requiring a high temperature (for example, 80 ° C. or more). it can. Further, since this silicon oxide layer is formed on the silane coupling agent layer, a remarkably strong binding force can be obtained as compared with the case where the silicon oxide layer is formed directly on the surface of the resin film.

Here, it is not clear why the bonding property / adhesion between the resin film and the silicon oxide layer is increased through the silane coupling agent layer, but the following is presumed as the reason. First, the silane coupling agent is strongly bonded to a polar group on the resin film surface by a chemical bond or the like. Therefore, a silane coupling agent layer having excellent binding force is formed. Next, in the present invention, a perhydropolysilazane solution is applied to the silane coupling agent layer. However, since perhydropolysilazane has a good affinity for the silane coupling agent layer, the perhydropolysilazane solution is applied to the silane coupling agent layer. , And is converted into silicon oxide there, thereby forming an interface which is hard to separate and is integrated with each other. As a result, a multilayer structure in which the resin film layer and the silicon oxide layer are strongly bonded via the silane coupling agent layer is obtained.

In the resistance film layer forming step, a conductive metal is adhered to the surface of the silicon oxide layer to form a transparent resistance film layer. Also in this case, a larger binding force can be obtained as compared with the case where the conductive metal film layer is formed directly on the resin film surface.

As described above, according to the transparent resistive film sheet manufacturing process including the above steps, a sheet having a four-layer structure in which the respective layers are strongly bonded to each other can be manufactured with high production efficiency.
The sheet having this structure is unlikely to cause performance deterioration.

Further, in the invention according to claim 5, following the transparent resistive film sheet forming step, the resistive film layer near the peripheral edge of the resistive film sheet is removed by a wet etching method or a laser etching method, so that the resistive film layer is removed from the peripheral edge of the sheet. As an etching process for forming a conductive region and a process following this process,
A lead in which at least one of the lead electrodes extends to the vicinity of the tip of the other lead electrode through the non-conductive region without contacting the conductive region, and the lead portions of both lead electrodes are arranged close to each other. Although an electrode forming step is provided, the effect of adopting the four-layer structure is remarkably exhibited here.

That is, as described above, in the case of the resistive film sheet having the four-layer structure, since the etching treatment does not impair the binding property and adhesion between the respective layers, the production yield is good. Further, when the resistive film layer around the sheet is removed by etching to form the non-conductive region (16), even if a part or all of the silicon oxide layer in the non-conductive region is removed together with the resistive film, the oxidization may not be performed. Since the silane coupling agent layer exists under the silicon layer, the resin film surface is not exposed. Therefore, the formation of the lead electrode is easy and a sufficient binding force can be obtained. Because
This is because the lead electrode is bonded to the resin film via at least the silane coupling agent layer.

In the lead electrode forming step, the tip portions of the pair of lead electrodes are arranged close to each other, so that the connection with the external electrodes is facilitated and the electric wiring can be simplified.
As described above, according to the manufacturing method having the above configuration, a resistive touch panel having excellent durability and reliability can be manufactured with high production efficiency.

It is to be noted that the deterioration of the binding property and adhesion between the layers due to the wet etching process is caused by the fact that the etching solution (especially an alkaline solution) penetrates under the mask in the lateral direction and the resin layer and the resistive film layer are in contact with each other. The reason therefor is to act so as to lower the binding property with the silicon oxide layer. In addition, the durability and reliability are reduced by the laser etching method because the laminated structure according to the conventional technology has a non-rigid structure, and the laser energy causes destruction to the periphery of the laser irradiation part, and as a result, irregularities ( This is because fuzz is generated and chips (mainly, small pieces of silicon oxide) are generated. The unevenness causes peeling or lifting of the lead electrode, and the swarf causes a decrease in writing durability and a defect of foreign matter. However, such a problem does not occur in the case of the four-layered sheet according to the present invention, in which the binding property and adhesion between the layers are sufficient.

[0028]

FIG. 1 is a schematic sectional view showing the overall structure of a resistive touch panel according to the present invention. In the touch panel according to the embodiment of the present invention, a transparent resistive film (2) is formed on the surface, and electrodes (3.3 ′) for applying a voltage to the resistive film are formed at opposite ends of the transparent resistive film. Touch-side transparent resistance film sheet (1), a display-side transparent resistance film sheet on which a transparent resistance film (8) is formed on the surface and electrodes for applying a voltage to the resistance film are formed on opposite ends of the transparent resistance film, respectively. (5) is the transparent resistive film surface (2.8)
Inside, the voltage application directions cross each other, and are arranged to face each other via an electrically insulating dot spacer (6). Here, a glass substrate is used as a base material of the lower member 5, and 4 in FIG.
-An insulating double-sided tape for bonding 5.

The touch panel according to the present embodiment
The structure of the touch-side transparent resistive film sheet 1 has an unprecedented feature. This feature will be described with reference to FIGS. FIG. 2 is a partially enlarged view of the left side portion of the touch-side transparent resistive film sheet 1 shown in FIG. FIG.
Shows a resistive film sheet having a non-conductive region 16 formed around it (before forming electrodes), and FIG. 4 is a diagram showing a surface shape of the touch-side transparent resistive film sheet 1 on the resistive film side. FIG.
FIG. 5 is a diagram illustrating a surface of a touch-side transparent resistive film sheet having a form different from that of FIG. 4.

As shown in FIG. 2, the touch-side transparent resistance film sheet 1 has a silane coupling agent layer 11, a silicon oxide layer 12, a transparent resistance film layer 2 on one surface of a transparent resin film 10.
Have a four-layer structure in which are sequentially stacked.
As shown in the figure, a non-conductive region 16 having a predetermined width excluding the transparent resistive film layer is formed on the periphery of the resistive film sheet 1.

As shown in FIGS. 4 and 5, electrodes 3 and 3 'are formed at both ends of the resistive film, respectively. Further, in the non-conductive region 16, lead electrodes 13, 13 'or 14, 14' connected to the pair of electrodes 3, 3 'are formed and arranged with their respective leading ends close to each other. For example, in the example of FIG. 4, one of the lead electrodes extends around the conductive region without contacting the conductive region on which the resistive film is formed, and extends to the vicinity of the other lead electrode. Further, in the example of FIG.
14 'are extended so as to approach each other. By forming and disposing a pair of lead electrodes in this way,
The tip portions of both lead electrodes can be used as external connection terminals 15. It should be noted that a voltage is applied to the pair of electrodes 3, 3 'via the lead electrodes.

FIGS. 4 and 5 show a form in which non-conductive regions are formed on all four sides of the touch-side transparent resistive film sheet 1. However, it is not always necessary to form non-conductive regions on all four sides. Absent. For example, in FIG. 4, a non-conductive region may be formed on two sides around 13/13 '.
In this case, it is only necessary that a non-conductive region is formed on one side of the periphery forming 14 ・ 14 ′. Further, as shown in FIG. 6, one of the pair of lead electrodes may be configured so that one of the electrodes also serves as a lead electrode.

Here, as the silane coupling agent,
For example, γ-aminopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, and the like can be used. Which silane coupling agent to use depends on
What is necessary is just to select the thing which can obtain strong binding force according to the material of a resin film. The method of forming the silane coupling agent layer is not particularly limited. For example, a method of dipping a resin film in a silane coupling agent solution, a method of applying a roller, or a method of applying a vapor of a silane coupling agent to a resin film. A gas phase contact method of contacting the surface or the like can be used. However, the gas phase contact method described later is preferable in that an extremely thin layer can be formed.

The method for forming the silicon oxide layer is not particularly limited, either.
(apor deposition) method, sputtering method, vacuum deposition method, sol-gel method and the like can be used. However, it is preferable to use a manufacturing method that can obtain a silicon oxide layer in which the average value of x in SiOx is 1.7 to 2.0. This is because if x is less than 1.7, the transparency becomes insufficient. For this reason, a method of coating a perhydropolysilane solution is more preferable. According to this method, the temperature around normal temperature (8
(0 ° C. or lower), silicon oxide (SiOx) having an average oxidation degree x> 1.9 can be formed easily and efficiently. In addition, according to the vacuum evaporation method or the sputtering method, the oxidation degree x
Is 1.9 to 2.0.

The above-mentioned perhydropolysilanezan is
Wherein the compound (polysilazane) having a number average molecular weight of about 100 to 50,000 or a modified product thereof has an amine or /
And those obtained by adding acids. This compound is described in detail in, for example, JP-A-9-31333. Here, R1, R2 and R3 of the above formula 1
Are each independently a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, or a group in which, other than these groups, a group directly bonded to silicon of a fluoroalkyl group is carbon, an alkylsilyl group, an alkylamino group, or Represents an alkoxy group, and at least one of R1, R2 and R3 is a hydrogen atom.

[0036]

Embedded image

As a means for coating the perhydropolysilane, a method capable of forming a thin and uniform coating layer is preferable. Examples of such a method include a spin coating method and a reverse gravure coating method.

There is no particular limitation on the type of resin film used in the present invention. For example, in addition to polyethylene terephthalate, polycarbonate and the like, amorphous polyolefins (for example, “ARTON” manufactured by JSR Corporation, “ZEONOR” manufactured by Zeon Corporation) can be used.

However, in the present invention, it is preferable to use a resin film having irregularities on the surface. From the viewpoint of the effect of preventing Newton's rings, it is preferable to set the center line average roughness Ra = 0.12 to 0.25 μm and the 10-point average height Rz = 1.0 to 3.0 μm. Examples of the means for forming the surface unevenness include an embossing method in which rolling and pressing are performed by an uneven roller, and a coated mat method in which silica and an organic resin filler are mixed and dispersed in an allyl resin are coated.

As the resistive film used in the present invention, for example, indium tin oxide (ITO), zinc oxide (ZnO),
Alternatively, a metal film made of tin dioxide (SnO ₂ ) or the like can be used. Further, a mixed metal may be used. Examples of the method for forming the metal film include a sputtering method, a vacuum evaporation method, and an ion plating method.

[0041]

EXAMPLES The contents of the present invention will be described more specifically based on examples.

(Example 1) A method of manufacturing a resistive touch panel according to Example 1 will be sequentially described according to a manufacturing procedure. [A] Manufacture of touch-side resistive film sheet (1) Surface unevenness treatment As a resin film, thickness 188 μm × width 770 mm ×
A belt-shaped polyethylene terephthalate film (PET film) having a length of 600 m was prepared, and irregularities were formed on one surface of the film by rolling press processing. Rolling press processing, film temperature 185 ℃, linear pressure 3
5kg / cm, film feed speed 5m / cm 2
Repeated times. The surface roughness of the film formed under these conditions was Ra = 0.14 μm and Rz = 1.32 μm.

(2) Formation of Underlayer A silane coupling agent layer and a silicon oxide layer were continuously formed on the uneven surface of the PET film by using an underlayer forming apparatus shown in FIG. As a silane coupling agent, γ-aminopropyltriethoxysilane (manufactured by Toshiba Silicone Co., Ltd .; TSL8331) is used. % Solution was used.

FIG. 7 is a schematic view conceptually showing an apparatus capable of continuously forming a thin run coupling agent layer and a silicon oxide layer on the surface of a resin film. The apparatus includes a drive unit (front roll 25 and rear roll 26) for advancing a resin film, a gas phase contact unit 23 arranged on the upstream side, and a roll coat unit arranged downstream from the gas phase contact unit. And at least a part 24.

Here, the gas phase contact portion 23 is a region where the vapor of the silane coupling agent is brought into contact with the surface of the resin film. The vapor of the silane coupling agent is generated by introducing dry nitrogen gas into the silane coupling agent in the bubbler 28 to cause bubbling. This steam is pipe 2
By 9, it is guided to the gas phase contact portion 23, where it is brought into contact with the surface of the resin film that moves sequentially. When the silane coupling agent comes into contact with the surface of the resin film, the silane coupling agent chemically bonds to the hydrophilic group on the surface of the resin film to form a silane coupling agent layer.

On the other hand, the roll coat unit 24 shown in FIG.
Is a region where perhydropolysilazane is applied to the surface of the resin film on which the silane coupling agent layer is formed to form a silicon oxide layer. The roll coating section 24 is composed of a perhydropolysilazane solution 27 and a rotating roll (post-roll).
26. The lower part of the rotary roll 26 is immersed in the perhydropolysilazane solution and the upper part thereof is in contact with the resin film surface so that the perhydropolysilazane solution can be applied to the resin film surface by rotation.

Further, although not shown in FIG. 7, a drying area for drying the solvent (m-xylene) on the coating surface and an oxidation of perhydropolysilazane are provided on the downstream side of the roll coating section 24 of the underlayer forming apparatus. A reaction region for chemically decomposing into silicon is provided. Drying in the drying area was performed using warm air at about 60 ° C. In the reaction area, a mixed vapor of steam and triethylamine was brought into contact with the coating surface for about 30 seconds to accelerate the decomposition reaction of perhydropolysilazane, and then left in an atmosphere of 95 ° C. and 80% RH (relative humidity) for 10 minutes. did. Thus, conversion to silicon oxide was sufficiently performed.

Here, XPS (X-ray photoelectron spectroscopy) of the PET film alone and the PET film on which the silane coupling agent layer was formed were measured, and the charts are shown in FIGS. 8 and FIG. 9, it can be seen that the first peak (←) in FIG. 9 is smaller than that in FIG.
From the electron escape depth, it was inferred that the thickness of the silane coupling agent layer would be about 10 nm.

After the formation of the silicon oxide layer, the thickness of the silicon oxide layer on the resin film was about 55 nm according to the measurement of the spectral reflectance.

(3) Formation of Resistive Film A resistive film layer made of indium tin oxide (ITO) was formed on the surface of the silicon oxide layer by DC magnetron sputtering. The conditions of the DC magnetron sputtering method were as follows. If the conditions other than the sputtering time are the same, the thickness of the ITO film is proportional to the sputtering time. Therefore, a desired film thickness can be obtained by regulating the sputtering time, and about 25 n
An ITO film having a thickness of m was formed.

Conditions Sputtering device Winding type sputtering device Target Sintering density 95%, Sn doping amount 10 wt% Ar: O ₂ ratio 4.5% Flow rate 100 sccm Substrate temperature 100 ° C. Sputtering current 2 A Sputtering time 1 minute

(5) Etching treatment The strip-shaped resin film on which the ITO film was formed in the above (3) was
The sheet was cut into a 50 mm × 420 mm sheet, and the vicinity of the periphery of the sheet was etched by a wet method to form a non-conductive region. Specifically, a portion other than the non-conductive region was masked with a resist, and then immersed in a 30% hydrochloric acid aqueous solution to remove the ITO film in the non-conductive region portion (exposed portion). Thereafter, the resist was removed by immersion in a 2% aqueous sodium hydroxide solution, and further washed with water and dried to prepare a sheet shown in FIG. In FIG. 3, reference numeral 2 denotes a 1TO film, and reference numeral 16 denotes a non-conductive region from which the 1TO film has been removed.

(6) Formation of Electrode and Lead Electrode First, an ITO film
A pair of electrodes 3 and 3 ′ were formed using silver paste so as to partially or entirely overlap the film 2. Next, lead electrodes 13 and 13 'connected to the electrodes 3 and 3' were formed using the same silver paste. More specifically, as shown in FIG. 4, the lead electrode 13 ′ is formed so as to extend slightly perpendicularly outward to the electrode 3 ′.
Was formed such that the front end portion thereof approached the lead electrode 13 ′ via the non-conductive region 16. Reference numeral 15 in FIG.
Is a tip portion of a pair of lead electrodes, which is an external connection terminal. Thus, a touch-side resistive film sheet was completed.

[B] Display side resistive sheet In place of the resin film, the thickness is 1.1 mm × 350 mm ×
Except for using a 420 mm alkali glass plate, not forming a silane coupling agent layer, and forming silicon oxide layers on both surfaces of the glass plate by a dipping method without using the apparatus of FIG. 7, A display-side resistance film sheet on which electrodes and lead electrodes were respectively formed was formed in substantially the same manner as the above-mentioned touch-side resistance film sheet.

Since silicon oxide has a good binding property to a glass substrate, it is not necessary to form a silane coupling agent layer on the display-side resistive film sheet. However, it goes without saying that a glass substrate or a resin film substrate having a four-layer structure formed with a silane coupling agent layer can be used as the lower member.

[C] Assembly of Touch Panel The touch-side resistive sheet (upper member) and the display-side resistive sheet (lower member) prepared above are insulated between the two sheets with the resistive film surface inside. The resistive films were overlapped with a conductive dot spacer interposed therebetween so that the voltage application directions of both resistance films crossed each other. Thus, the resistive touch panel of Example 1 was completed.

Example 2 The same procedure as in Example 1 was carried out except that a touch-side resistive film sheet (upper member) having a shape shown in FIG. 5 was formed by using a laser etching method instead of a wet etching method. Thus, a resistive touch panel according to Example 2 was manufactured.

The laser etching is performed at a frequency of 3 kHz,
Laser current 24A, table feed speed 1000mm /
The measurement was performed with a YAG laser under the conditions of sec.

Comparative Example 1 A resin film (PET film) directly without forming a silane coupling agent layer
A touch-side resistive film sheet was produced in the same manner as in Example 1 (wet etching method), except that a perhydropolysilazane solution was applied to the surface to form a silicon oxide layer. Using this, a resistive touch panel of Comparative Example 1 was manufactured in the same manner as in Example 1 for other items.

(Comparative Example 2) An example was made except that a silicon oxide layer was formed by a method of applying a perhydropolysilazane solution directly to the surface of a resin film (PET film) without forming a silane coupling agent layer. In the same manner as in 2 (laser etching), a touch-side resistive film sheet was produced. Using this, a resistive touch panel of Comparative Example 2 was manufactured in the same manner as in Example 2 for other items.

[Evaluation Section of Each Resistive Sheet] In order to examine the durability and reliability of the touch-side resistive sheets according to Examples 1 and 2 and Comparative Examples 1 and 2 prepared above, the following tests were conducted. Was. The test results are shown in Tables 1 and 2.

(Tight Bond Test) The resistive sheets on the touch side according to Examples 1 and 2 and Comparative Examples 1 and ² were subjected to a load of 400 g / cm ^{2 on} a cloth impregnated with ethanol to obtain I.
The TO film surface was slid back and forth, and the number of times until the ITO film was peeled was measured. The number of reciprocating slides was up to 100 times, and no more.

(Alkali Resistance Test) The alkali resistance test was performed on the touch-side resistive film sheets according to Examples 1 and 2 and Comparative Examples 1 and 2. As a test method, a resistance film sheet was placed in a 2% by weight aqueous sodium hydroxide solution (25 ° C.) for about 2 hours.
After immersion for 5 minutes, it was examined whether or not the resistive film peeled off when the resistive film surface was strongly wiped off with a cloth. The purpose of this test is to examine whether or not the adhesive bonding property is impaired by the wet etching process. A: The sheet after immersion does not peel off even if strongly wiped with a cloth; B: The sheet after immersion Was peeled off by strongly wiping it with a cloth, and C was peeled off only by dipping in an alkaline aqueous solution.

(Laser Etching Processability) The degree of unevenness (flashiness) and generation of etching debris of the touch-side resistive film sheets according to Example 2 and Comparative Example 2 were determined by observing the etched edge with an optical microscope. Was examined.

[0065]

[Table 1]

[0066]

[Table 2] From the results in Tables 1 and 2, the following was confirmed. First, according to the results of the adhesion bonding test in Table 1, the resistive film sheets of Examples 1 and 2 in which the silane coupling layer was formed did not peel even after 100 reciprocal slidings. In Comparative Examples 1 and 2 having no silicon oxide layer, the silicon oxide layer was separated from the resin film layer by reciprocating sliding 5 times or 100 times or more. Also, from the results of the alkali resistance test, it was found that
The resistive sheet on the touch side according to
After immersion for 5 minutes, the sheet was not peeled off even when strongly wiped with a cloth, whereas the touch-side resistive film sheet according to Comparative Example 1 was delaminated only by immersion in an alkaline aqueous solution, and the touch panel according to Comparative Example 2 In the side resistance film sheet, the sheet after immersion was not peeled off even when strongly wiped with a cloth.

From these results, according to the method of forming a silane coupling layer on the surface of the resin film first and then forming the silicon oxide layer on the silane coupling agent layer, the adhesiveness between the resin film and the silicon oxide layer is improved. It was confirmed that the temperature was remarkably increased and the alkali resistance was also improved.

On the other hand, in the comparison between the laser-etched Example 2 and Comparative Example 2 (Table 2), in Example 2, fuzz of silicon oxide and processing chips (fine pieces) were recognized on the laser-processed surface. In contrast, in Comparative Example 2, burrs of silicon oxide and processing dust (fine powder) considered to be fragments of the silicon oxide layer were observed. From these results, it was confirmed that the four-layer resistive sheet according to the present invention had excellent laser etching resistance.

Here, fuzz refers to a state in which the etching line has a lot of irregularities, but fuzz or generation of processing dust is caused by weak bonding of the silicon oxide layer to the resin film. This is considered to be due to the non-uniformity and random peeling of each minute piece. Such a state causes a decrease in writing durability and a defect of a foreign substance.

Note that the resistance film sheets of Example 1 and Comparative Example 1 were subjected to the wet etching method, and thus were already once exposed to an aqueous alkali solution before the alkali resistance test was performed. Therefore, in Comparative Example 1, the resistive film sheet of Comparative Example 2 to which the laser etching method is applied is also easily peeled off. Although the results of the acid resistance test are not described in Tables 1 and 2, the binding between the resin film and the silicon oxide layer hardly deteriorates by the acid treatment. Therefore, improvement in alkali resistance means improvement in resistance to wet etching.

[0071]

As described above, the touch-side resistance film sheet according to the present invention has a four-layer structure in which a silane coupling agent layer, a silicon oxide layer, and a resistance film layer are sequentially formed on the surface of a resin film. In this structure, the silane coupling agent layer strongly binds the silicon oxide layer to the resin film surface, and the silicon oxide layer strongly binds the resistive film layer to the silane coupling agent layer. . Therefore, it is possible to form a resistance film sheet in which each layer is strongly and intimately bound.

Therefore, according to the present invention in which the above-mentioned resistive film sheet is used for the upper member, it is possible to realize a resistive touch panel having excellent durability and reliability without increasing the cost. Furthermore, according to the configuration of the present invention in which a non-conductive region is formed around the touch-side resistive film sheet and a lead electrode is disposed in this region, the electric resistance can be maintained without impairing the durability and reliability of the resistive touch panel. Wiring can be simplified and rationalized.

Further, according to the production method of the present invention in which a silicon oxide layer is formed on a silane coupling agent layer using a perhydropolysilazane solution, a resistive touch panel excellent in transparency and visibility can be produced efficiently. Can be manufactured.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a resistive touch panel according to the present invention.

FIG. 2 is a partially enlarged view showing a sectional structure of a touch-side resistive film sheet according to the present invention.

FIG. 3 is a diagram illustrating a planar shape of a resistance film sheet at a stage when a non-conductive region is formed.

FIG. 4 is a diagram showing a planar shape of a resistive film surface of a touch-side resistive film sheet according to the present invention.

FIG. 5 is a diagram showing another embodiment of the planar shape of the resistive film surface of the touch-side resistive film sheet according to the present invention.

FIG. 6 is a view showing another aspect of the planar shape of the resistive film surface of the touch-side resistive film sheet according to the present invention.

FIG. 7 is a conceptual diagram illustrating an apparatus for forming an underlayer.

FIG. 8 is an XPS chart of a PET film.

FIG. 9 shows a P having a silane coupling agent layer formed on its surface.
It is an XPS chart of an ET film.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 touch-side resistive sheet 2 touch-side resistive film 3 · 3 ′ touch-side electrode 4 insulating double-sided tape 5 display-side resistive sheet 6 dot spacer 7 display-side electrode 8 display-side resistive film 10 resin film layer 11 silane coupling agent Layer 12 Silicon oxide layer 13 ・ 13 ′ Lead electrode 14 ・ 14 ′ Lead electrode 15 External connection terminal 16 Non-conductive area 21 Strip resin film 22 Silane coupling agent 23 Gas phase contact part 24 Roll coat part 25 Front roll 26 Rear roll 27 Perihydropolysilazane solution 28 bubbler

Claims (5)

[Claims] 1. A touch-side transparent resistive film sheet having a transparent resistive film formed on a surface thereof, and a display-side transparent resistive film sheet having a transparent resistive film formed on a surface thereof, with the transparent resistive film surface inside and applying a voltage. In a resistive touch panel, the directions of which intersect with each other and are opposed to each other with a dot spacer interposed therebetween, wherein the touch-side transparent resistive film sheet is formed by oxidizing a silane coupling agent layer and a silane coupling agent layer on one surface of a transparent resin film. A resistive touch panel, wherein a silicon layer and a transparent resistive film layer are sequentially laminated. 2. A touch side having a transparent resistive film (2) on the surface and a pair of electrodes (3, 3 ') for applying a voltage to the resistive film at opposite ends of the transparent resistive film. A display-side transparent resistance film sheet having a transparent resistance film sheet (1), a transparent resistance film (8) on the surface, and a pair of electrodes for applying a voltage to the resistance film at opposite ends of the transparent resistance film. The resistive touch panel is disposed so as to face the transparent resistive film surface (2.8) inward and to intersect the voltage application direction with the dot spacer (6) interposed therebetween. The side transparent resistance film sheet (1) has a silane coupling agent layer (1) on one surface of the transparent resin film (10).
1), a silicon oxide layer (12) and a transparent resistance film layer (2) are sequentially laminated, and the periphery of the sheet is
Non-conductive area (1) from which the transparent resistive film layer on the sheet surface is removed
6) are formed, and the first and second lead electrodes (13 · 13 ′, 14) respectively derived from a pair of electrodes are provided in the non-conductive region (16).
.14 ') is formed, at least one of the first and second lead electrodes goes around the conductive region without contacting the conductive region on which the resistive film is formed, and the tip portion thereof is the other end. Lee. A resistive touch panel formed and arranged so as to approach a tip portion of an electrode. 3. The resistive touch panel according to claim 1, wherein an average value of x in SiOx of the silicon oxide layer is 1.7 to 2.0. 4. The surface roughness of the one surface of the transparent resin film is such that the center line average roughness Ra = 0.12 to 0.25 μm.
5. The resistive touch panel according to claim 1, wherein the average height Rz is 1.0 to 3.0 μm. 10. 5. A touch side having a transparent resistive film (2) on the surface and a pair of electrodes (3, 3 ′) for applying a voltage to the resistive film at opposite ends of the transparent resistive film. A display-side transparent resistance film sheet having a transparent resistance film sheet (1), a transparent resistance film (8) on the surface, and a pair of electrodes for applying a voltage to the resistance film at opposite ends of the transparent resistance film. (5) with the transparent resistive film surface (2.8) inward,
In addition, in the method for manufacturing a resistive touch panel, in which the voltage application directions intersect with each other and the dot spacer (6) is interposed therebetween, the touch-side transparent resistive film sheet (1) is formed of a transparent resin film. A step of forming a silane coupling agent layer by applying and fixing a silane coupling agent solution on one surface of (10), and forming a silane coupling agent layer on the surface of the silane coupling agent layer (11). A step of applying a hydropolysilazane solution to chemically transform perhydropolysilazane into silicon oxide to form a silicon oxide layer (12); and attaching a conductive metal to the surface of the silicon oxide layer (12). A transparent resistive film sheet forming process including a resistive film layer forming step to form a transparent resistive film layer (2); and a resistive film layer near the periphery of the resistive film sheet. An etching step of forming a non-conductive area (16) on the periphery of the sheet by removing the non-conductive area by wet etching or laser etching; and contacting the non-conductive area without contacting at least one of the lead electrodes with the conductive area. A lead electrode forming step of extending to the vicinity of the tip end of the other lead electrode via the other, and arranging the tip portions of both lead electrodes close to each other.