JP2001053203A - Heat radiating plate - Google Patents
Heat radiating plateInfo
- Publication number
- JP2001053203A JP2001053203A JP11228176A JP22817699A JP2001053203A JP 2001053203 A JP2001053203 A JP 2001053203A JP 11228176 A JP11228176 A JP 11228176A JP 22817699 A JP22817699 A JP 22817699A JP 2001053203 A JP2001053203 A JP 2001053203A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- heat
- silicon
- ceramic substrate
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Ceramic Products (AREA)
Abstract
Description
【0001】[0001]
【産業の属する技術分野】本発明は、回路基板、とりわ
けICを多用したセラミックス基板の、高温化を抑制す
るための放熱板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat radiating plate for suppressing a high temperature of a circuit board, especially a ceramic substrate using many ICs.
【0002】[0002]
【従来の技術】従来、大電流パワーモジュールなどの高
電流モジュールでは、僅かな配線抵抗に多量の電流が流
されることからモジュール自体が発熱する。その結果、
搭載されたICが熱暴走したり、ひどい時にはIC自体
が破損する問題がある。そのため、モジュールには耐熱
性に優れたセラミックス基板を用いると共に、発生する
熱を効率よく放熱するためにCuやAlなどの金属製の
放熱板が具備されている。2. Description of the Related Art Conventionally, in a high-current module such as a large-current power module, a large amount of current flows through a small wiring resistance, so that the module itself generates heat. as a result,
There is a problem that the mounted IC runs away from heat or the IC itself is damaged in severe cases. Therefore, a ceramic substrate having excellent heat resistance is used for the module, and a heat radiating plate made of metal such as Cu or Al is provided to efficiently radiate generated heat.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、このモ
ジュールは、セラミックス基板と金属製放熱板との間に
熱膨張に差があることから、セラミックス基板と放熱板
とを直接接合した場合、繰り返し使用することで、繰り
返し発熱してそりなどの変形を起こす問題があった。そ
のため、セラミックス基板と金属製放熱板とは、機械的
に接合する方法が採られており、温度の上昇により発生
する膨張差を逃げを設けることにより対応していた。そ
の結果、両者の接点が限られて全面での接合ができな
く、それがために両者の接触面積が少なくなり、放熱板
の特性を十分活かせない問題があった。However, since this module has a difference in thermal expansion between the ceramic substrate and the metal radiator plate, it is used repeatedly when the ceramic substrate and the radiator plate are directly joined. As a result, there has been a problem that heat is repeatedly generated and deformation such as warpage is caused. For this reason, a method of mechanically joining the ceramic substrate and the metal radiator plate has been adopted, which has been dealt with by providing a relief for a difference in expansion caused by a rise in temperature. As a result, there is a problem that the contact between the two is limited and the entire surface cannot be joined, thereby reducing the contact area between the two and making it impossible to fully utilize the characteristics of the heat sink.
【0004】本発明は、上述したモジュールが有する課
題に鑑みなされたものであって、その目的は、モジュー
ルに発生する熱を効率よく放熱し、かつ、セラミックス
基板に直接接合されても、セラミックス基板との間の熱
膨張の差により発生する基板の変形を小さくする放熱板
を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the module, and has as its object to efficiently radiate heat generated in the module and to directly connect the ceramic substrate to the ceramic substrate. Another object of the present invention is to provide a heat radiating plate for reducing deformation of a substrate caused by a difference in thermal expansion between the heat radiating plate and the heat radiating plate.
【0005】[0005]
【問題を解決するための手段】そこで、本発明者等は、
上記目的を達成するため鋭意研究した結果、放熱板とし
てセラミックス粉末と金属との複合材料を用いれば、モ
ジュールに発生する熱を効率よく放熱し、かつ、セラミ
ックス基板に直接接合されても、セラミックス基板との
間の熱膨張の差により発生する基板の変形を小さくする
ことが出来るとの知見を得て本発明を完成するに至っ
た。[Means to solve the problem] Therefore, the present inventors,
As a result of diligent research to achieve the above objective, the use of a composite material of ceramic powder and metal as a heat radiating plate efficiently dissipates the heat generated in the module and ensures that even if the module is directly bonded to the ceramic substrate, The present inventors have found that the deformation of the substrate caused by the difference in thermal expansion between them can be reduced, and have completed the present invention.
【0006】即ち本発明は、炭化けい素粉末にけい素を
浸透させた複合材料を放熱板とすることにある。炭化け
い素粉末と金属けい素とを複合させることで、使用され
るセラミックス基板の熱膨張に近似させることが出来る
と共に、高い熱伝導性も付与できることから、優れた放
熱板とすることが出来ることになる。That is, the present invention resides in using a composite material in which silicon carbide is impregnated with silicon carbide powder as a heat sink. By combining silicon carbide powder and metallic silicon, it is possible to approximate the thermal expansion of the ceramic substrate used and to provide high thermal conductivity, making it an excellent heat sink. become.
【0007】通常、セラミックス基板としては、アルミ
ナ(Al2O3)、窒化アルミニウム(AlN)、ベリリ
ア(BeO)などが用いられる。どの基板においても本
発明の放熱板は使用可能であるが、とりわけ、窒化アル
ミニウムは本発明の放熱板との熱膨張差を非常に近く出
来、残留応力が貯まりにくく最も適した基板である。Usually, alumina (Al2O3), aluminum nitride (AlN), beryllia (BeO), etc. are used as the ceramic substrate. The radiator plate of the present invention can be used for any substrate. In particular, aluminum nitride is the most suitable substrate because the difference in thermal expansion between the radiator plate and the radiator plate of the present invention can be made very close and residual stress is hardly accumulated.
【0008】[0008]
【発明の実施の形態】本発明の放熱板の作製方法は特に
限定されるものではないが、例えば、以下のような方法
で作製される。DESCRIPTION OF THE PREFERRED EMBODIMENTS The method of manufacturing a heat sink of the present invention is not particularly limited, but is manufactured by the following method, for example.
【0009】先ず炭化けい素粉末とフェノール樹脂とを
混合し、プレス成形により板状に成形後、真空中で炭化
処理(約900℃)した後、真空中で1500〜170
0℃で焼成することで、あるいは炭化けい素粉末とカー
ボン粉末とを混合し、それを板状に成形後、真空中15
00〜1700℃で焼成することでポーラスなプリフォ
ームを形成する。得られたプリフォームに高純度金属け
い素のインゴットを接触させ、アルゴン中1500〜1
700℃で熱処理することで溶融金属けい素がプリフォ
ーム中に浸透しフェノール樹脂あるいはカーボン粉末と
反応焼結して炭化けい素が生成すると共に、プリフォー
ム中の空隙を溶融金属けい素が埋め緻密な放熱板が得ら
れることとなる。First, a silicon carbide powder and a phenol resin are mixed, molded into a plate by press molding, carbonized in a vacuum (about 900 ° C.), and then 1500 to 170 vacuum.
By sintering at 0 ° C. or by mixing silicon carbide powder and carbon powder, forming it into a plate,
By firing at 00 to 1700 ° C., a porous preform is formed. An ingot of high-purity metallic silicon was brought into contact with the obtained preform,
Heat treatment at 700 ° C allows molten metal silicon to penetrate into the preform and react and sinter with the phenolic resin or carbon powder to form silicon carbide, and the voids in the preform are filled with molten metal silicon and dense. Thus, a good heat sink can be obtained.
【0010】その放熱板として十分な熱伝導性を得るた
めには、放熱板の気孔率は10%以下が望ましく、気孔
率が低い方が望ましいので、5%以下がより望ましい。In order to obtain sufficient heat conductivity as the heat radiating plate, the porosity of the heat radiating plate is desirably 10% or less, and the porosity is desirably low. Therefore, the porosity is desirably 5% or less.
【0011】セラミックス基板と放熱板との接合は、活
性金属による方法やハンダによる方法などで接合しても
よいし、セラミックス基板の上に前記したプリフォーム
を配置し、そのプリフォームに溶融金属けい素を浸透さ
せると同時にその浸透した溶融金属けい素とセラミック
ス基板とを融着させて放熱板とセラミックス基板とを接
合させても差し支えない。要は放熱板の特性を十分活か
せるようセラミックス基板と放熱板とを全面で接合する
ことができればよく、そうすればセラミックス基板から
の熱を効率的に放熱板に伝導することができることにな
る。The ceramic substrate and the heat sink may be joined by a method using an active metal, a method using solder, or the like. Alternatively, the preform described above may be arranged on a ceramic substrate, and the molten metal silicon may be attached to the preform. At the same time, the radiating plate and the ceramic substrate may be joined by fusing the molten metal silicon and the ceramic substrate that have been infiltrated with the silicon. The point is that it is sufficient that the ceramic substrate and the heat radiating plate can be joined on the entire surface so that the characteristics of the heat radiating plate can be fully utilized, so that heat from the ceramic substrate can be efficiently transmitted to the heat radiating plate.
【0012】[0012]
【実施例】以下、本発明の実施例を比較例と共に具体的
に挙げ、本発明をより詳細に説明する。EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples of the present invention and Comparative Examples.
【0013】(1)実施例1 炭化けい素(GC#180、信濃電気精錬社製)100
重量部とフェノール樹脂(BRL−101、昭和高分子
社製)10重量部を混合し、60mm□×4mmtに成
形後、真空中1600℃で3時間焼成して相対密度65
%のプリフォームを形成した。次いで金属けい素のイン
ゴット上に得られたプリフォームを配置後、アルゴン中
1600℃で金属けい素を溶融してプリフォーム中に溶
融金属けい素を浸透させ、冷却してそれを加工し、50
mm□×2mmtの放熱板を作製した。得られた放熱板
の気孔率は2%、熱伝導率は150W/K・mであった。
また、活性金属を用いて銅プレートを表面に貼り付けた
40mm□×1.5mmtの窒化アルミニウム基板をハン
ダを用いて放熱板に接合し、シリコンチップを実装しな
い模擬モジュールを作製した。(1) Example 1 Silicon Carbide (GC # 180, manufactured by Shinano Electric Refining Co., Ltd.) 100
Parts by weight and 10 parts by weight of a phenol resin (BRL-101, manufactured by Showa Polymer Co., Ltd.) are mixed, molded into a size of 60 mm × 4 mmt, and baked at 1600 ° C. for 3 hours in a vacuum to obtain a relative density of 65%.
% Of the preform was formed. Then, after placing the obtained preform on the silicon metal ingot, the metal silicon is melted at 1600 ° C. in argon to infiltrate the molten metal silicon into the preform, and then cooled to process it.
A heat sink of mm × 2 mmt was prepared. The resulting heat sink had a porosity of 2% and a thermal conductivity of 150 W / K · m.
Also, a 40 mm square 1.5 mmt aluminum nitride substrate having a copper plate attached to the surface thereof using an active metal was bonded to a heat sink using solder to produce a simulated module without mounting a silicon chip.
【0014】(2)実施例2 実施例1と同様に作製した放熱板に銅プレートを貼り付
けたアルミナ基板を実施例1と同様に接合して、シリコ
ンチップを実装しない模擬モジュールを作製した。(2) Example 2 An simulated module without mounting a silicon chip was manufactured by bonding an alumina substrate having a copper plate attached to a radiator plate manufactured in the same manner as in Example 1 in the same manner as in Example 1.
【0015】(3)実施例3 実施例1と同様に作製したプリフォームの上に40mm□
×1.5mmtの窒化アルミニウム基板を配置し、プリフ
ォームの下面に金属けい素インゴットを配置した状態
で、アルゴン中1600℃で金属けい素を溶融してプリ
フォームに溶融金属けい素を浸透させて放熱板を作製す
ると同時に、その放熱板を窒化アルミニウム基板と接合
した後、窒化アルミニウム基板上面に活性金属を用いて
銅プレートを貼り付け、シリコンチップを実装しない模
擬モジュールを作製した。(3) Example 3 A 40 mm square was placed on a preform manufactured in the same manner as in Example 1.
With a 1.5 mmt aluminum nitride substrate placed and a metal silicon ingot placed under the preform, the silicon metal is melted at 1600 ° C. in argon to infiltrate the preform with the molten metal silicon. Simultaneously with the production of the radiator plate, the radiator plate was joined to the aluminum nitride substrate, and then a copper plate was attached to the upper surface of the aluminum nitride substrate using an active metal, thereby producing a simulated module without mounting a silicon chip.
【0016】(4)比較例1 活性金属を用いて銅プレートを貼り付けた40mm□×
1.5mmtの窒化アルミニウム基板をハンダを用いて5
0mm□×2mmtの銅製放熱板に接合して、シリコンチッ
プを実装しない模擬モジュールを作製した。(4) Comparative Example 1 A 40 mm square with a copper plate attached using an active metal
1.5mmt aluminum nitride substrate was soldered to 5
A simulated module without a silicon chip mounted thereon was fabricated by bonding to a copper radiator plate of 0 mm square x 2 mm t .
【0017】評価方法は、上記模擬モジュールに対し、
ESPEC製のTHERMAL SHOCK CHAMB
ERを用い、−40℃〜+125℃の間で16℃/se
cで昇降温させ、両温度での保持時間5分の温度サイク
ルを50サイクル負荷し、負荷前後の基板の平面度を表
面粗さ計(東京精密社製、surfcom 205C)
を用いてJIS B0601で測定し、負荷前後の最大
高さ(Rmax)の差を平面度の変化とし、温度変化によ
る基板の変形度合いの指標とした。得られた結果を表1
に示す。The evaluation method is as follows:
THERMAL SHOCK CHAMB made by ESPEC
Using ER, 16 ° C./sec between −40 ° C. and + 125 ° C.
The temperature was raised and lowered by c, and 50 cycles of a temperature cycle of 5 minutes holding time at both temperatures were loaded, and the flatness of the substrate before and after loading was measured by a surface roughness meter (Surfcom 205C, manufactured by Tokyo Seimitsu Co., Ltd.).
Was measured in accordance with JIS B0601, and the difference in maximum height (Rmax) before and after the load was defined as a change in flatness, and was used as an index of the degree of deformation of the substrate due to a change in temperature. Table 1 shows the obtained results.
Shown in
【0018】表1から明らかなように、本発明の放熱板
では、比較例に比べ熱における変形が小さく、熱応力歪
みが小さい結果となった。As is evident from Table 1, the heat sink of the present invention showed less heat deformation and smaller thermal stress distortion than the comparative example.
【0019】[0019]
【発明の効果】以上の通り、本発明の放熱板を電子回路
用放熱板(いわゆるヒートシンク)として用いることに
より、シリコンチップ駆動による発熱を効率的に放熱で
き、モジュール自体の熱による(熱サイクルにおける)
熱応力歪みに伴う変形が小さく、延いては、駆動用電子
回路基板と放熱板との剥離が抑制され、より信頼性の高
い電子回路モジュールとすることができる。As described above, by using the heat sink of the present invention as a heat sink for electronic circuits (so-called heat sink), the heat generated by driving the silicon chip can be efficiently dissipated, and the heat generated by the module itself (in the heat cycle) )
Deformation due to thermal stress distortion is small, and thus, separation between the driving electronic circuit board and the heat sink is suppressed, and a more reliable electronic circuit module can be obtained.
【表1】 [Table 1]
Claims (2)
複合材料からなることを特徴とする放熱板。1. A radiator plate comprising a composite material in which silicon carbide is impregnated into silicon carbide powder.
する請求項1記載の放熱板。2. The heat sink according to claim 1, wherein the porosity is 10% or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11228176A JP2001053203A (en) | 1999-08-12 | 1999-08-12 | Heat radiating plate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11228176A JP2001053203A (en) | 1999-08-12 | 1999-08-12 | Heat radiating plate |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001053203A true JP2001053203A (en) | 2001-02-23 |
Family
ID=16872420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11228176A Pending JP2001053203A (en) | 1999-08-12 | 1999-08-12 | Heat radiating plate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001053203A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7141309B2 (en) | 2003-03-18 | 2006-11-28 | Ngk Insulators, Ltd. | High thermal conductive material having high thermal conductivity and process for producing the same |
EP2301905A1 (en) * | 2009-09-28 | 2011-03-30 | ABC Taiwan Electronics Corp. | Porous ceramic preparation method |
-
1999
- 1999-08-12 JP JP11228176A patent/JP2001053203A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7141309B2 (en) | 2003-03-18 | 2006-11-28 | Ngk Insulators, Ltd. | High thermal conductive material having high thermal conductivity and process for producing the same |
EP2301905A1 (en) * | 2009-09-28 | 2011-03-30 | ABC Taiwan Electronics Corp. | Porous ceramic preparation method |
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