CN113809016A - Composite substrate - Google Patents
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- CN113809016A CN113809016A CN202010961991.5A CN202010961991A CN113809016A CN 113809016 A CN113809016 A CN 113809016A CN 202010961991 A CN202010961991 A CN 202010961991A CN 113809016 A CN113809016 A CN 113809016A
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- 239000000758 substrate Substances 0.000 title claims abstract description 153
- 239000002131 composite material Substances 0.000 title claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 239000000919 ceramic Substances 0.000 claims abstract description 63
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910000679 solder Inorganic materials 0.000 claims abstract description 58
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 53
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 46
- 239000010949 copper Substances 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010936 titanium Substances 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 239000011701 zinc Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 11
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 20
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 238000007731 hot pressing Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 description 15
- 238000001465 metallisation Methods 0.000 description 10
- 238000005245 sintering Methods 0.000 description 10
- 238000005219 brazing Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000004381 surface treatment Methods 0.000 description 9
- 229910010293 ceramic material Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
Abstract
The invention discloses a composite substrate, which comprises a ceramic substrate and an aluminum-based silicon carbide substrate which are vertically stacked, and a joint surface is formed between the ceramic substrate and the aluminum-based silicon carbide substrate through hot-pressing and jointing of an active metal solder, wherein the aluminum-based silicon carbide substrate contains 50-83 vol% of SiC, the active metal solder is selected from any one of the group consisting of silver, copper, titanium, zinc and aluminum, the composite substrate only needs to select the aluminum-based silicon carbide substrate consisting of proper SiC, and utilizes the characteristics of high heat resistance and low thermal expansion of the aluminum-based silicon carbide substrate, when the composite substrate is subjected to high-temperature hot pressing, the active metal solder and the ceramic substrate can be directly pressed together to form a continuous and compact joint interface with good overall heat dissipation effect, so that the manufacturing process is simplified, the joint strength and yield are improved, the cost is cheaper, the heat dissipation effect and the impact strength can be improved, and the mechanical properties such as impact resistance, vibration resistance and the like and the product reliability and the like are improved, has excellent performance and is more suitable for the field of vehicles.
Description
Technical Field
The invention relates to a composite substrate, in particular to an AlSiC substrate with proper SiC composition, which can be directly hot-pressed and bonded with a ceramic substrate through active metal solder to form a continuous and compact bonding interface with good heat dissipation effect, so that the manufacturing process is simplified, the bonding strength and yield are improved, and the cost is cheaper.
Background
The ceramic has good mechanical strength, good heat resistance, chemical stability, oxidation resistance, electrical insulation, compactness, optical characteristics and the like, and can be applied to different required manufacturing processes by changing the properties of the ceramic through components, so that the ceramic is widely applied to industries such as electronic devices, photoelectric and semiconductor component packaging, automobiles, the communication field, aerospace science and technology, chemical engineering and the like, and the ceramic substrate made of the ceramic material is very suitable for being used as a packaging substrate of a power device because the ceramic material has the properties of high heat conductivity, good heat resistance, high insulation, high strength, thermal matching with a chip material and the like, and can lead heat generated by a heat source (such as a chip and a semiconductor device) out of the ceramic substrate so as to meet the use requirements of high-power electronic devices.
Typical ceramic substrate materials include alumina (Al)2O3) Aluminum nitride (AlN), silicon nitride (Si)3N4) In order to obtain better thermal and electrical properties, mechanical strength, air tightness, smaller dimensional changes, etc., in practical applications, ceramic materials are often bonded to metal (e.g., aluminum or copper) heat dissipation components or circuits in a manner including diffusion bonding, brazing, soldering, etc., and in the process of bonding metal and ceramic substrates by brazing, a common alloy solder is difficult to wet with the ceramic materials, which results in insufficient bonding strength between the alloy solder and the ceramic materials. Under the condition, the wettability can be improved by using a pre-metallization method and an active brazing method, wherein the pre-metallization method is to metallize the joint surface of the ceramic material before brazing, and the active brazing method is to add a small amount of active metal (such as titanium, zirconium, and the like) into an alloy solder (such as nickel, copper, silver, and the like) to prepare an active metal solder which can react with the ceramic material to generate a wetting effect so as to achieve the purpose of joint, and the operation of the process is very simple and convenient, so the application of ceramic packaging and metallization is very wide.
However, in the conventional method for bonding a ceramic substrate and an aluminum metal substrate [ such as an aluminum-based metal plate or a Heat Sink ] and the like ], one surface of the ceramic substrate and copper metal are first welded by an Active Metal Brazing (AMB) material (abbreviated as an active metal solder) to form an AMB substrate, then the copper layer is selectively etched to generate a copper metal circuit layout, and the other surface of the ceramic substrate is thermally pressed and bonded with the aluminum metal substrate by a Heat-conducting adhesive (such as an adhesive or a resin) or other surface treatment [ such as metallization (such as nickel plating, gold, tin, and the like) or anodic oxidation treatment ] to form a composite substrate, so that the Heat generated by the load can be absorbed by the copper metal circuit working chip on the surface of the ceramic substrate and then transferred to the aluminum metal substrate through a bonding interface in a Heat conduction manner or absorbed by the aluminum metal substrate to dissipate the Heat, thereby reducing thermal shock caused by excessive heat energy accumulated on the ceramic substrate or influencing the operation performance of the working chip.
However, the ceramic substrate is bonded with the aluminum metal substrate by using an adhesive or resin, which can be performed at a low temperature, thereby reducing the problem of thermal stress generated in the bonding process, but the resin has poor heat conduction effect, and hinders heat conduction at the interface, so that the overall thermal resistance of the bonded composite substrate is increased, the interface is peeled off due to aging after long-term use, and the resin cannot be wetted on the ceramic substrate, thereby causing the problems of poor heat dissipation effect, interface gaps and the like; moreover, if the ceramic substrate is bonded with the aluminum metal substrate by a surface treatment method, such as chemical plating, high-temperature sintering, evaporation, sputtering and other metallization treatments, the material of the applied surface treatment has a complex chemical composition, and many variation factors such as shrinkage and expansion are caused, so that the problems of poor interface bonding force, poor compactness, easy oxidation or difficult control of the thickness of the metallization layer and the like are easily found after the hot-press bonding. In other words, neither the choice of resin nor the surface treatment is an ideal choice for the composite substrate, and especially, the development of the automotive field that is not conducive to simultaneously addressing high thermal conductivity for external heat dissipation and impact resistance is also an important issue and problem that the industry has long sought to improve.
Disclosure of Invention
Therefore, in view of the above-mentioned shortcomings, the inventors have collected relevant data, evaluated and considered in many ways, and continuously tried and modified with years of experience accumulated in the industry to design such a composite substrate.
The main object of the present invention is to replace aluminum metal substrate with SiC aluminum-based SiC substrate with appropriate content ratio, and to utilize the characteristics of high heat-resistant temperature and heat-resistant coefficient, small thermal expansion change, low possibility of high temperature deformation, high heat resistance and low thermal expansion, so that when bearing high temperature hot pressing, the composite substrate can be directly pressed together with ceramic substrate by active metal solder to form a continuous compact bonding interface with good heat dissipation effect.
The secondary objective of the present invention is to select an active metal solder for the composite substrate from any one of the group consisting of silver, copper, titanium, zinc and aluminum, and to improve the wetting reaction of the solder to the ceramic after melting by utilizing the high activity of the active metal, so that the aluminum-based silicon carbide substrate can be directly hot-pressed and bonded with the ceramic substrate without performing a metallization surface treatment, and finally the composite substrate without any interface gap or interface peeling is formed.
Another objective of the present invention is to provide a bonding interface of a composite substrate, which lacks the problems of poor interface bonding force and poor compactness caused by the complex chemical composition and the variation factors such as shrinkage and expansion of the metallized surface treatment, and a continuous and compact bonding interface can be formed after the aluminum-based sic substrate is directly thermocompression bonded with the ceramic substrate by the active metal solder.
In order to achieve the purpose, the invention adopts the following technical means:
the invention provides a composite substrate, which comprises a ceramic substrate and an aluminum-based silicon carbide substrate which are vertically stacked, wherein a joint surface formed by active metal solder is arranged between the ceramic substrate and the aluminum-based silicon carbide substrate, the aluminum-based silicon carbide substrate contains silicon carbide (SiC) with the volume percentage of 50-83 vol%, and the active metal solder is selected from any one of the group consisting of silver (Ag), copper (Cu), titanium (Ti), zinc (Zn) and aluminum (Al).
Preferably, the ceramic substrate includes a ceramic substrate and a metal layer structure formed on at least one side surface of the ceramic substrate.
Among them, preferably, the ceramic substrate material is silicon nitride (Si)3N4) TaN (TaN), AlN (AlN), beryllia (BeO), and alumina (Al)2O4) Or silicon carbide (SiC).
Preferably, the metal layer structure is formed by attaching a copper metal layer on the upper surface of the ceramic substrate and etching to form a copper metal line.
Among them, the aluminum-based silicon carbide substrate preferably contains 63 vol% of SiC by volume.
Among them, the active metal solder preferably contains 70 vol% of Ag, 28 vol% of Cu and 2 vol% of Ti.
Among them, the active metal solder preferably contains 10 vol% of Ag, 85 vol% of Cu and 5 vol% of Ti.
Among them, the active metal solder preferably contains 80 vol% Zn and 20 vol% Al.
Preferably, the bonding surface formed by the active metal solder is formed by thermocompression bonding.
Drawings
FIG. 1 is a schematic structural diagram of a composite substrate according to the present invention;
FIG. 2 is a table of data for the composition of the active metal solder of the present invention;
FIG. 3 is a schematic view of a composite substrate according to the present invention during thermocompression bonding;
FIG. 4 is a table showing data and a judgment of the bonding surface effect in the test of the embodiment of the present invention.
Description of the symbols
1: ceramic substrate
2: aluminum-based silicon carbide substrate
3: active metal solder
L weight of load
Detailed Description
To achieve the above objects and advantages, the present invention provides a technical solution and a structure thereof, wherein the structure and function of the preferred embodiment of the present invention are described in detail as follows for a complete understanding.
Referring to fig. 1-4, which are a schematic view of the structure of the composite substrate, a data table of active metal solder, a schematic view of the composite substrate during thermocompression bonding, and a data and bonding surface effect determination table tested in the embodiments of the present invention, it can be clearly seen from the figure that the composite substrate of the present invention includes a ceramic substrate 1 and an aluminum-based silicon carbide (AlSiC) substrate 2 stacked up and down, and active metal solder [ Active Metal Brazing (AMB) material, abbreviated as AMB material ] is used between the ceramic substrate 1 and the aluminum-based silicon carbide substrate 2]3 performing thermocompression bonding to form a bonding surface, wherein the upper ceramic substrate 1 comprises a ceramic substrate and a metal layer structure on at least one side surface thereof, and the ceramic substrate material is preferably silicon nitride (Si)3N4) However, the material is not limited thereto, and may be TaN nitride (TaN), aluminum nitride (AlN), beryllium oxide (BeO), aluminum oxide (Al)2O4) Or silicon carbide (SiC), and the metal layer structure is formed by adhering a copper metal layer on the upper surface of a ceramic substrate by high/low temperature co-fired ceramic (HTCC/LTCC), direct copper-clad (DBC), direct copper-plated (DPC), or Active Metal Brazing (AMB), and etching the copper metal layer to form a copper metal line, so that a chip, a semiconductor, or a power device can be mounted or packaged on the ceramic substrate 1, and is electrically connected to the copper metal line by means of solder, wire bonding, and the like.
In the present embodiment, the above-mentioned composite substrate lower layer is the aluminum-based silicon carbide substrate 2, the characteristics of which mainly depend on the volume percentage (vol%, i.e. the content of the composition), distribution and particle size of SiC, and can be adjusted by changing the content of the composition, because the aluminum-based silicon carbide substrate 2 contains 50-83 vol% of SiC, preferably 63 vol%, and because the aluminum-based silicon carbide substrate 2 contains more than 50 vol% of SiC, the heat resistance temperature and heat resistance coefficient are higher than those of the conventional metal substrate or ceramic substrate, and the thermal expansion change is small and the high temperature deformation is not easy to occur, so that the aluminum-based silicon carbide substrate 2 itself has the characteristics of high heat resistance and low thermal expansion, and can replace the aluminum metal substrate, and is directly hot-pressed and bonded with the ceramic substrate 1 by the active metal solder 3 to form a composite substrate.
As shown in fig. 2 and 3, the composition ratio of the active metal solder 3 selected in the embodiment of the present invention is mainly three, wherein the solder a contains 70 vol% silver (Ag), 28 vol% copper (Cu) and 2 vol% titanium (Ti), the solder B contains 10 vol% silver (Ag), 85 vol% copper (Cu) and 5 vol% titanium (Ti), and the solder C contains 80 vol% zinc (Zn) and 20 vol% aluminum (Al), the solder is prepared by using active metal (such as titanium and zinc) and silver, copper, aluminum and other metals, and the active metal has high activity, so that the wetting reaction of the solder on the ceramic after melting can be improved, and the ceramic surface can be bonded with the metal without metallization.
When the ceramic substrate 1, the aluminum-based silicon carbide substrate 2 and the active metal solder 3 are thermocompression bonded, a vacuum heating furnace or a melting furnace is used to heat the active metal solder 3 to a sintering temperature (for example, a temperature range of 580 to 865 ℃) higher than the melting point, as shown in the data table of fig. 4, the sintering temperature can be 865 ℃, 510 ℃ or 580 ℃ respectively according to the mixture ratio of the solder composition, the active metal solder 3 is melted for a certain period of time, then the active metal solder can be fully filled between the ceramic substrate 1 and the aluminum-based silicon carbide substrate 2 for a wetting reaction, and then the predetermined load L can be 0.58kgf/cm respectively2(0.075Mpa)、1.17kgf/cm2(0.11MPa) or 0.21kgf/cm2(0.028MPa), or a heating rodTo heat the load L (such as a hot-pressing head), and the ceramic substrate 1 is directly hot-pressed by the hot-pressing head to heat the active metal solder 3 to a predetermined sintering temperature, as the temperature or holding time of the active brazing increases, the aluminum-based silicon carbide substrate 2 can bear high-temperature hot pressing by utilizing the characteristics of high heat resistance and low thermal expansion, the active metal solder 3 and the ceramic substrate 1 can be pressed together to form a composite substrate with a compact joint surface, and the micro-metallurgical structure of the joint interface of the composite substrate, it can be observed that the alloy solder of the active metal solder 3 can effectively fill up the surface pores of the ceramic substrate 1 and the aluminum-based silicon carbide substrate 2, has good wettability, the ceramic substrate 1 and the aluminum-based silicon carbide substrate can be tightly jointed, no gap is generated in the joint interface between the ceramic substrate and the aluminum-based silicon carbide substrate, the deflection deformation is not easy to occur, and finally the composite substrate without any interface gap or interface peeling is formed.
Specifically, the experimental data of examples 1-10 of the composite substrate of the present invention can be observed as shown in FIG. 4, wherein the ceramic substrate material selected for the upper ceramic substrate 1 of the composite substrate structure is silicon nitride (Si) with a thickness of 0.32mm3N4) The lower aluminum-based silicon carbide (AlSiC) substrate 2 is composed of silicon carbide (SiC) having a thickness of 3.00mm and contents of 50%, 63% and 83%, respectively, and is bonded by hot pressing under different loads L and sintering temperatures by different composition ratios (e.g., solders A to C) of the active metal solder 3 to form a composite substrate having a bonding surface.
According to the results of the surface effect judgment of examples 1 to 4, the same load L (e.g., 0.58 kgf/cm) can be found2) And a sintering temperature (e.g., 865 deg.C), and the bonding surface effect was determined to be good as long as the SiC content of the Al-based SiC substrate 2 is higher than 50% (e.g., 63% or 83%) regardless of the composition ratio of the solder A or the solder B, but it was found that the sintering temperature (e.g., 865 deg.C) is not changed and the load L is 0.58kgf/cm2Increased to 1.17kgf/cm2When the SiC content of the Al-based SiC substrate 2 is 50% or the Al-based SiC substrate 2 is subjected to a pre-metallization surface treatment (e.g., surface plating), the composition ratio of the solder A or the solder B is selected, and the bonding surface effect is determined to be no moreIs good.
Furthermore, from the results of the evaluation of the bonding surface effects in examples 8 to 10, it was found that when the SiC composition content of the aluminum-based silicon carbide substrate 2 was 63% and the composition ratio of the solder C was selected, the load L was 0.21kgf/cm at a low load2The bonding surface effect is judged to be good when the sintering temperature is 580 ℃, but the bonding surface effect is judged to be bad when the sintering temperature is reduced to 510 ℃ and the load L is not changed, so that the active metal solder 3 provided by the embodiment of the invention can be selected by matching with the aluminum-based silicon carbide substrate 2 with the SiC content of 50-83%, and can be suitable for the composite substrate provided by the invention by adjusting the load L and the sintering temperature of the hot-press bonding process.
When the composite substrate of the invention is carried on or packaged with a chip, a semiconductor or a power device and other heat sources on the upper ceramic substrate 1, the heat generated by the heat source and a copper metal circuit can be absorbed through the ceramic substrate, and is rapidly conducted to the lower aluminum-based silicon carbide substrate 2 through the active metal solder 3 to be absorbed and then released to the outside, because the thermal resistance of the active metal solder 3 selected by the embodiment is much lower than that of the resin used by the traditional bonding, the heat conduction effect is better, the aluminum-based silicon carbide substrate 2 consisting of proper SiC is used for replacing the aluminum metal substrate, the aluminum metal substrate is directly hot-pressed and bonded through the active metal solder 3 without carrying out metallization surface treatment (such as surface copper plating, chemical nickel plating and the like), and finally, a continuous and compact bonding interface with good integral heat dissipation effect is formed, thereby simplifying the manufacturing process of the composite substrate, and the strength and the yield of the joint are improved, the cost is cheaper, the heat dissipation effect and the impact strength can be improved, compared with the traditional composite substrate, the composite substrate has remarkably superior performance on mechanical properties such as impact load resistance, vibration resistance and the like, product reliability and the like, and is more suitable for the field of vehicles.
Therefore, the invention mainly provides a composite substrate, which is characterized in that an aluminum-based silicon carbide substrate 2 composed of SiC with a proper content ratio replaces an aluminum metal substrate, and the aluminum-based silicon carbide substrate has high heat resistance and low thermal expansion characteristics, when the composite substrate is subjected to high-temperature hot pressing, a compact joint interface can be formed by pressing and combining an active metal solder 3 and a ceramic substrate 1 directly, and finally the composite substrate without any interface gap or interface peeling is formed; in addition, the lack of metalized surface treatment on the joint interface has the problems of poor interface joint force, poor compactness and the like caused by variation factors such as complex chemical composition, shrinkage and expansion and the like, compared with the interface gap or interface peeling caused by thermal expansion deformation in the conventional composite substrate, the joint interface can effectively improve the impact resistance strength, and has excellent performance on mechanical properties such as impact resistance, vibration resistance and the like, product reliability and the like.
The above detailed description is directed to a preferred embodiment of the present invention, which is not intended to limit the scope of the invention, but rather is intended to cover all equivalent variations and modifications within the scope of the invention as defined in the appended claims.
Claims (9)
1. A composite substrate comprises a ceramic substrate and an aluminum-based silicon carbide substrate which are stacked up and down, and is characterized in that a joint surface formed by active metal solder is arranged between the ceramic substrate and the aluminum-based silicon carbide substrate, the aluminum-based silicon carbide substrate contains silicon carbide (SiC) with the volume percentage of 50-83 vol%, and the active metal solder is selected from any one of the group consisting of silver (Ag), copper (Cu), titanium (Ti), zinc (Zn) and aluminum (Al).
2. The composite substrate of claim 1, wherein the ceramic substrate comprises a ceramic base and a metal layer structure formed on at least one side surface of the ceramic base.
3. The composite substrate of claim 2, wherein the ceramic substrate material is silicon nitride (Si)3N4) TaN (TaN),Aluminum nitride (AlN), beryllium oxide (BeO), aluminum oxide (Al)2O4) Or silicon carbide (SiC).
4. The composite substrate of claim 2, wherein the metal layer structure is formed by attaching a copper metal layer on the top surface of the ceramic substrate and etching the copper metal layer to form a copper metal line.
5. The composite substrate of claim 1, wherein the aluminum-based silicon carbide substrate comprises 63 vol% SiC.
6. The composite substrate of claim 1, wherein the active metal solder comprises 70 vol% Ag, 28 vol% Cu, and 2 vol% Ti.
7. The composite substrate of claim 1, wherein the active metal solder comprises 10 vol% Ag, 85 vol% Cu, and 5 vol% Ti.
8. The composite substrate of claim 1, wherein the active metal solder comprises 80 vol% Zn and 20 vol% Al.
9. The composite substrate of claim 1, wherein the bonding surface formed by the active metal solder is formed by thermocompression bonding.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109120255A TWI734528B (en) | 2020-06-16 | 2020-06-16 | Composite substrate |
| TW109120255 | 2020-06-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113809016A true CN113809016A (en) | 2021-12-17 |
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| CN202010961991.5A Pending CN113809016A (en) | 2020-06-16 | 2020-09-14 | Composite substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114959899A (en) * | 2022-04-13 | 2022-08-30 | 北京青禾晶元半导体科技有限责任公司 | Silicon carbide composite substrate and preparation method thereof |
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| US20120160084A1 (en) * | 2010-12-13 | 2012-06-28 | Benjamin Mosser | Ceramic armor and method of manufacturing by brazing ceramic to a metal frame |
| CN202454549U (en) * | 2012-02-17 | 2012-09-26 | 北京卫星制造厂 | Heat dissipation structure of ceramic packaging power component based on aluminum base silicon carbide |
| CN109315061A (en) * | 2016-06-10 | 2019-02-05 | 田中贵金属工业株式会社 | The manufacturing method of ceramic circuit board and ceramic circuit board |
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| TWI780113B (en) * | 2018-02-14 | 2022-10-11 | 日商三菱綜合材料股份有限公司 | METHOD OF MANUFACTURING CERAMIC/Al-SiC COMPOSITE MATERIAL BONDED BODY AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE WITH HEAT SINK |
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| EP0459865A1 (en) * | 1990-05-31 | 1991-12-04 | Grumman Aerospace Corporation | Method of protecting ceramic surfaces |
| JPH09263459A (en) * | 1996-03-28 | 1997-10-07 | Agency Of Ind Science & Technol | Method for bonding ceramics with metal |
| JP2001217364A (en) * | 2000-02-07 | 2001-08-10 | Hitachi Metals Ltd | Al-SiC COMPOSITE |
| US20120160084A1 (en) * | 2010-12-13 | 2012-06-28 | Benjamin Mosser | Ceramic armor and method of manufacturing by brazing ceramic to a metal frame |
| CN202454549U (en) * | 2012-02-17 | 2012-09-26 | 北京卫星制造厂 | Heat dissipation structure of ceramic packaging power component based on aluminum base silicon carbide |
| CN109315061A (en) * | 2016-06-10 | 2019-02-05 | 田中贵金属工业株式会社 | The manufacturing method of ceramic circuit board and ceramic circuit board |
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| CN114959899A (en) * | 2022-04-13 | 2022-08-30 | 北京青禾晶元半导体科技有限责任公司 | Silicon carbide composite substrate and preparation method thereof |
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| TWI734528B (en) | 2021-07-21 |
| TW202200527A (en) | 2022-01-01 |
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