JP2001053063A - Semiconductor device manufacturing method and apparatus therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a method and apparatus for manufacturing a semiconductor device, which can measure the amount of deposition on a film in a processing chamber from the outside of the chamber while not hindering the vacuum condition of the chamber. SOLUTION: It is difficult to completely remove a deposited substance 116 even after a cleaning process, and thus a certain constant amount of deposition is accumulated on a quartz cylinder 107 or the like. The deposition film, when deposited on the surface of the cylinder 107, causes the cylinder 107 to be shrunk, generating a thin film stress and deforming the cylinder 107. The amount of such deformation is measured with a displacement measuring device 114 from the outside of a processing chamber. The displacement measuring device 114 uses an element for measuring a distance with a reflecting surface. The displacement measuring device 114 detects reference light 112 from the cylinder 107 to measure a change in the distance until the cylinder 107 with a high resolution. As a result, there can be realized a semiconductor device manufacturing method and apparatus in which the amount of deposition on a film in the processing chamber and the condition thereof can be measured from outside of the chamber while not hindering the vacuum condition of the chamber.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method and an apparatus for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In a process of forming an electrode wiring in a semiconductor manufacturing apparatus, various metal thin films are selectively etched. Etching is performed by reacting a gas used for an etching process with a substance to be etched.

[0003] However, the reaction products formed by the reaction between the gas and the substance to be etched cannot be completely exhausted by an exhaust system attached to the processing chamber, and may not be completely exhausted on the inner wall of the etching processing chamber or on the surface of parts. Adheres and deposits.

The main reaction products are chlorine-based, bromine-based, and boron-based compounds used in the etching gas, metal-based compounds to be etched, and portions that are not to be subjected to the etching treatment. An organic compound such as a resist to be used.

When a reaction product adheres and accumulates in the processing chamber (hereinafter referred to as a deposition film), dust is generated from the reaction product.
In addition, when the etching process is repeatedly performed, the deposited film gradually becomes thicker, peels off from the adhered portion (the surface of the component in the processing chamber), drops off on the wafer, and causes disconnection.

Further, a specific gas is generated from these deposited films, and the process becomes unstable, so that the reproducibility of the etching cannot be obtained. As a result, there arises a problem that the yield is reduced. This leads to an increase in device production costs.

Therefore, when the deposited films reach a certain amount, they must be removed. As a method therefor, a process of generating a plasma of oxygen gas or the like to remove a deposited film in a processing chamber (hereinafter, referred to as a plasma cleaning process) has been performed. In addition to a plasma cleaning process using an oxygen gas, a plasma cleaning process using a gas containing a fluorine atom such as nitrogen trifluoride is performed. In some cases, the processing chamber is opened to the atmosphere to clean and clean internal components.

[0008]

After performing the plasma cleaning process, it is necessary to determine whether the deposited film has been sufficiently removed. If the same process is always repeated, the amount of deposited film can be estimated from the number of integrated processes.However, recent processes tend to perform various different processes with one device, and the state of the deposited film is estimated. Hard to do.

Therefore, it is important to monitor the amount and state of the deposited film in order to determine when to perform the cleaning process and to determine the effect of the cleaning process.

As a method of monitoring the deposited film, there is a method of irradiating a member in the processing chamber with light and monitoring the amount of reflected light. However, it is generated by a reaction product adhering to a window through which light is introduced. It is very difficult to measure the amount of the deposited film with high sensitivity due to the problem of window fogging.

On the other hand, once the processing chamber is exposed to the atmosphere in order to monitor the amount and state of the deposited film, it is difficult to return the processing chamber to the original vacuum state due to adsorption of moisture in the air. The evacuation must be continued for several hours.

The device characteristics are adversely affected or become unstable due to the influence of the moisture.
Further, since the evacuation time is long, the productivity of the manufacturing process is significantly reduced.

An object of the present invention is to measure the amount and state of deposition of a deposited film in an etching processing chamber from outside the processing chamber without obstructing the vacuum state of the processing chamber.
An object of the present invention is to realize a method and an apparatus for manufacturing a semiconductor device.

[0014]

The present invention is configured as follows to achieve the above object. (1) In a method for manufacturing a semiconductor device in which a manufacturing process is performed by using a processing chamber and a gas introduced therein, the method described above includes a deposition film generated and adhered to a surface of the processing chamber or a member in the processing chamber during a manufacturing process. The amount of deformation of the processing chamber or a member in the processing chamber is measured, the reference value of the deformation amount is compared with the measured deformation amount, and the removal of the deposited film is performed based on the comparison between the reference value and the measured deformation amount. Start a specific process, such as a process.

(2) Preferably, in the above (1),
The amount of deformation is measured by reference light generated from the processing chamber or a member in the processing chamber.

(3) Preferably, in the above (2), the reference light is generated by irradiating light such as a laser from outside the processing chamber.

(4) Preferably, in the above (1) to (3), the manufacturing process is a process of etching a metal or a silicon oxide film, or a CVD process for forming a metal, a silicon oxide or a silicon film. Process or a sputtering process to produce a metal film.

(5) In a semiconductor device manufacturing apparatus in which a manufacturing process is performed by using a processing chamber and a gas introduced into the processing chamber, a deposition film adhered to a surface of the processing chamber or a surface of a member in the processing chamber during a manufacturing process. The resulting processing chamber or deformation amount measuring means for measuring the deformation amount of a member in the processing chamber, and a comparison means for comparing a reference value of the deformation amount and the deformation amount measured by the deformation amount measuring means,
Based on a comparison between the reference value and the measured deformation amount,
Initiate a specific process, such as a deposition film removal process.

(6) Preferably, in the above (5),
The deformation amount measuring means measures the deformation amount using reference light generated from the processing chamber or a member in the processing chamber.

(7) Preferably, in (6), the deformation amount measuring means generates reference light by irradiating light such as a laser from outside the processing chamber. The amount of deformation of the processing chamber itself or a member in the processing chamber due to adhesion of the deposited film is measured by irradiating a laser beam from outside the processing chamber, and the amount and state of the deposited film are determined from the amount of deformation. . When the amount of deformation exceeds a certain reference amount, the cleaning process is started to properly remove the deposited film, and the adverse effects of the deposited film are reduced by changing the manufacturing process conditions, etc. To stabilize device characteristics.

[0021]

FIG. 1 is a schematic structural view of a manufacturing apparatus for carrying out a method of manufacturing a semiconductor device according to a first embodiment of the present invention, and is a schematic sectional view of a microwave etching apparatus. The example of FIG. 1 is an example in which a microwave plasma apparatus is used as an apparatus for performing an etching process on a metal thin film.

Referring to FIG. 1, the microwave plasma apparatus includes an etching chamber 101 and a lower chamber 102, and the inside thereof is maintained at a vacuum of, for example, 0.01 mTorr or less. Microwave 1 passing through waveguide 103
04 is transmitted through the quartz window 105 and introduced into the processing chamber 101.

A quartz tube 107 is provided in the upper chamber so that the processing chamber 101 is not etched. A table 108 is disposed in the processing chamber 101 so as to face the quartz window 105. A wafer 109 is removably placed on the table 108 by means such as electrostatic attraction. Outside the processing chamber 101, the coil 11
0 is arranged. The state of plasma generation can be controlled by the method of applying a current to the coil 110.

On the other hand, a reaction gas used for etching or cleaning processing is introduced from the upper side or the side of the processing chamber 101 and discharged from an exhaust duct 111 connected to the lower chamber 102.

Next, the procedure of the etching process used in this apparatus will be briefly described. The inside of the processing chamber 101 and the lower chamber 102 is evacuated from the exhaust duct 111 and a wafer 109 on which a metal thin film to be etched is formed is transferred into the processing chamber 101. After that, about 1.2 Pa and about 1.0 Pa of boron trichloride gas are introduced into the processing chamber 101 at a partial pressure of chlorine gas as an etching gas.

Subsequently, the coil 11 outside the processing chamber 101
Current flows to zero. Then, the microwave introduction tube 105
From the processing chamber 101 by introducing a microwave 104 having a frequency of about 2.45 GHz and 800 W from the
Generate within. Frequency 2 MH at the bottom of wafer 109
A high frequency of z is applied at 100 W, and the surface of the wafer 109 is etched.

Next, a method of manufacturing the wiring pattern shown in FIG. 3 according to the first embodiment of the present invention will be described with reference to the flowchart of the device manufacturing procedure of FIG. First, in the etching processing procedure 201, the inside of the processing chamber 101 and the lower chamber 102 is evacuated by the jet 111, and the wafer 109 on which the metal thin film to be etched is formed is transferred into the processing chamber 101. afterwards,
Approximately 1.2P with chlorine gas partial pressure as etching gas
a, About 1.0 Pa of boron trichloride gas is introduced into the processing chamber 101. Then, an electric current is supplied to the coil 110 outside the processing chamber 101.

Plasma is generated in the processing chamber 101 by introducing a microwave 104 having a frequency of about 2.45 GHz and 800 W from the microwave introduction tube 103.
Then, a high frequency of 2 MHz is applied to the lower portion of the wafer 105 at 60 W, and the wafer 109 is etched.

The device structure formed on the surface of the wafer 109 is as shown in FIG. In FIG.
An interlayer insulating film 304 is formed on a memory structure including a bit line 301, a word line 302, and a storage electrode 303. An aluminum thin film 305 is already formed on the upper part, and the upper part is covered with a resist 306. Since a part of the aluminum thin film 305 is removed by an etching process, a part of the resist 306 is vacant so that the removed part is exposed.

In the above-described etching procedure 201, a portion of the aluminum thin film 305 that is not covered with the resist 306 on the surface is etched downward, and the underlying interlayer insulating film 304 is exposed in that portion.

During the etching process, a reaction product is generated on the inner surface of the quartz tube 107 or the like in the processing chamber 101 as shown in the deposited film 112 in FIG. These deposits 116 increase as the etching process progresses, from which dust and peeled matters are discharged into the processing chamber 101. If these adhere to the surface of the device portion to be etched, they cause etching failure and cause device fabrication failure, and therefore need to be removed or reduced by some method.

The deposited reaction products are chlorine used as an etching gas, an aluminum compound to be etched, an organic compound from a photoresist,
And a BO-based compound in which boron trichloride and oxygen are bonded. Oxygen is supplied to the photoresist and the quartz tube 1 in the processing chamber 101.
07.

Next, in order to remove the deposit 112 by plasma, a cleaning procedure 202 shown in FIG. 2 is performed.

The inside of the processing chamber 101 and the lower chamber 102 is exhausted from the exhaust duct 111 and the wafer 109 is transferred. Wafer 109 for plasma cleaning process
Does not need to be a product wafer, but a dummy wafer or the like coated with an oxide film.

In order to remove the aluminum compound in the deposit 112, boron trichloride is introduced as a boron-based gas at a partial pressure of about 1.0 Pa.

A predetermined current is applied to the coil 110 outside the processing chamber 101. Plasma is generated in the processing chamber 101 by introducing a microwave 104 having a frequency of about 2.45 GHz and a power of 1000 W from the microwave introduction tube 103. Although a high frequency was applied to the wafer 109 during the etching process, it is not necessary during the plasma cleaning process.

This is because, by not applying a high frequency to the wafer 109, the plasma reacts with the reaction product deposited on the quartz tube 107 and is easily removed. The aluminum-based compound is changed into aluminum chloride by the plasma of the generated boron trichloride gas, released into the processing chamber 101, and exhausted and removed from the exhaust duct 111.

In addition, in order to remove organic compounds in the deposited film 116, oxygen may be introduced under a partial pressure of about 1.0 Pa and the same cleaning treatment as described above may be performed. Of course, the cleaning process may be repeated by introducing not only oxygen but also other gases effective for removing the deposited film 116.

However, even if such a plasma cleaning process is performed, it is very difficult to completely remove the deposit 116, and a certain amount of the deposit is accumulated on the quartz tube 107 or the like. Would. In order to monitor the amount of deposition, the procedure 203 for measuring the deposited film thickness in FIG. 2 is executed. The details will be described below.

When these deposited films adhere to the surface of the quartz tube 107 shown in FIG.
7 is deformed. If the deposited film adheres to about 1 μm, deformation of about 10 μm occurs near the end face of the quartz tube 107. The amount of deformation is measured by the displacement measuring device 114 from outside the processing chamber. Displacement measuring device (deformation measuring means)
For the element 114, for example, an element or the like that measures the distance from the reflection surface using the interference of laser light is used.

The displacement measuring device 114 detects the reference beam 112 coming out of the quartz tube 107, and
The change in distance up to 7 is measured with a resolution of about 0.3 μm. In this case, the reference light 112 is reflected light generated by the irradiation light 113 entering from outside the processing chamber 101.

Then, the measured deformation amount is compared with a previously measured reference value by comparing means (not shown) to determine how much the deposited film is attached. When the amount of the deposited film is equal to or more than the predetermined amount, a specific process such as a process of removing the deposited film is started.

There are other methods for measuring the amount of deformation, for example,
A method of measuring the warpage of the quartz tube 107 by measuring the deviation of the optical axis of the reference light 112 caused by the reflection may be used. Alternatively, a method of measuring a strain amount by attaching a strain gauge to the outside of the quartz tube 107 may be used.

In addition to the above-described method of measuring the amount of strain, there is a method of attaching a deposited film to the inner surface of the processing chamber 101 and attaching a reflector for measuring the amount of deformation. FIG. 4 is a diagram illustrating a measuring method using the above-described reflector. In FIG. 4, a displacement measuring device 114 is provided outside the processing chamber 101, from which irradiation light 113 is emitted, and the reference light 112 returning through a transparent window plate 401 is measured. Thereby, the processing chamber 1
The distance to the position where the light of the reflecting plate 402 provided in the light emitting device 01 is irradiated is monitored.

When the deposited film 403 adheres to the reflector 402, the reflector 402 starts to warp due to stress. The amount of increase in the distance between the displacement measuring device 114 and the point where the light from the reflecting plate 402 shines is proportional to the thickness of the deposited film 403. For example, if the reflecting plate 402 is an aluminum plate having a thickness of about 1 mm and a length of about 20 mm, and the deposited film 403 is a carbon film,
Since the film thickness and the amount of warpage of the reflection plate 402 are substantially the same, the amount is sufficiently measurable.

Instead of measuring the distance to the reflection plate 402, the shift of the light spot at which the reference light 112 strikes the displacement measuring device 114 may be measured. In this case, as the thickness of the deposited film 403 increases, the shift of the light spot also increases due to the warpage of the reflection plate 402. In this method, by disposing the displacement measuring device 114 at a distance,
Since the slight displacement of the reflection plate 402 can be measured and enlarged,
More sensitive monitoring is possible. Further, in this method, since the reflection plate 402 covers the window plate 401, there is no problem that the deposited film adheres to the window plate 401 and fogs.

When measuring the amount of deformation of the reflection plate 402,
In some cases, thermal expansion of any of the quartz tube 107, the processing chamber 101, and the reflection plate 402 must be considered. In that case, the temperature is measured by attaching a thermocouple to the surface of the quartz tube 107 or the processing chamber 101, or by measuring with a radiation thermometer or the like. For example, by measuring the amount of deformation when these temperatures are at a certain temperature, the influence of thermal expansion can be suppressed.

The thickness of the deposited film is measured by the method described above. In order to eliminate the influence of various measurement errors, a difference from the previous measurement result may be obtained, and the extent to which the film thickness has increased in this process may be recorded. In this way, the current film thickness is estimated, and as a result, for example, it is determined whether or not the thickness is about 1 μm or more. If it exceeds this, it is expected that manufacturing defects due to dust contamination will become a problem, and the gas of the aluminum chloride compound released from the deposited film 116 during the etching process will break the balance in the plasma and make the process unstable. You. The operator is informed of this situation, for example, by lighting a lamp on the operation panel.

In response to this result, the operator repeats the plasma cleaning process, or, if the decrease in the deposited film is still not remarkable, cleans the deposited film inside the apparatus to solve the above-mentioned problem. And a number of device structures as shown in FIG. 3 are formed in the wafer,
The yield can be kept high.

Incidentally, there is still another method for measuring the amount of deformation due to the adhesion of the deposited film. FIG.
FIG. 9 is an explanatory diagram of an example of measuring the amount of deformation due to adhesion of a deposited film by measuring the displacement of the position of reflected light.

In FIG. 5, irradiation light 113 emitted from a laser light source 501 is aligned by a mirror 503, is reflected on the surface of a reflection plate 402 on which a deposition film 403 is attached, and is used as a reference light 112 as a light spot position detector 502. Incident on. The light spot position detector 502 can accurately measure the incident position of the light spot on the order of μm by using, for example, a CCD element.

The warping of the reflector 402 is caused by the light spot position detector 5
02 is detected as a shift of the light spot on the light emitting element 02. The more the light spot position detector 502 is separated from the reflecting plate 402, the more sensitive the warping becomes to the sensitivity. Therefore, it is possible to accurately measure the fine warping of the reflecting plate 402.

As described above, according to the first embodiment of the present invention, the quartz tube 107 or the reflecting plate 40 in the processing chamber 101 is used.
Light from the outside of the processing chamber 101 is irradiated on the quartz tube 107 or the reflecting plate 402 by warping the quartz tube 107 or the reflecting plate 402 caused by the deposited films 116 and 403 deposited on
It is configured to measure the amount of the deposited film, 116, 403 from the reflected light. Therefore, it is possible to realize a semiconductor device manufacturing method and a manufacturing apparatus capable of measuring the amount and state of a deposited film in an etching chamber from outside the processing chamber without obstructing the vacuum state of the processing chamber. Can be.

Since the window 115 shown in FIG. 1 is formed in an existing etching processing chamber for another use, it is not necessary to newly form the window 115 in order to carry out the present invention.

By the way, in the example shown in FIG.
07 is used, but there is a processing chamber in which such a member is not put in the processing chamber 101. For example,
When the deposited film directly adheres to the processing chamber 101, the amount of deformation of the processing chamber 101 itself is measured.

FIG. 6 is a schematic configuration diagram of a manufacturing apparatus for implementing a method of manufacturing a semiconductor device according to a second embodiment of the present invention, and is a diagram showing an example of measuring the deformation of the processing chamber described above. is there. In the configuration according to the second embodiment,
There is no quartz tube or the like in the processing chamber, and the deposited film 116 is directly attached to the inner surface of the processing chamber 601. Even in such a state, the side surface of the processing chamber 601 is warped due to the stress of the deposited film 116.

In this case, the irradiation light 113 irradiates a part outside the processing chamber 601 and returns the reference light 1 returning therefrom.
The deformation amount of the processing chamber 601 is measured by measuring 12 with the displacement measuring device 114. Of course, the warpage of the side surface of the processing chamber may be detected by measuring the position of the reflected light spot.

According to the second embodiment of the present invention, the warping of the side surface of the processing chamber 601 caused by the deposition film 116 deposited on the inner surface of the processing chamber 601 causes the light from outside the processing chamber 601 to be directed to the side surface of the processing chamber 601. It is configured to irradiate and measure from the reflected light to detect the amount of the deposited film 116. Therefore, it is possible to realize a semiconductor device manufacturing method and a manufacturing apparatus capable of measuring the amount and state of a deposited film in an etching chamber from outside the processing chamber without obstructing the vacuum state of the processing chamber. Can be.

Incidentally, depending on the structure of the apparatus, there is a case where the influence of dust contamination can be suppressed by monitoring the deposited film adhered to a specific area such as the periphery of the wafer.

FIG. 7 is a schematic configuration diagram of a manufacturing apparatus for performing a method of manufacturing a semiconductor device according to a third embodiment of the present invention, and shows an example of measuring deformation of members around a wafer as described above. It is.

In FIG. 7, the etching of the wafer 109 proceeds by the plasma excited by the high frequency wave emitted from the upper electrode 701. Therefore, the deposited film 116 is placed on a portion of the wafer stage cover 702 near the wafer 109.
Is particularly easily adhered.

In this case, the irradiation light 113 emitted from the laser light source 501 is applied through one window 115 to the portion of the surface of the wafer stage cover 702 where the deposited film 116 does not adhere much, and is reflected by the reference light. Light 112 is emitted from the light spot position detector 502 through the other window 115. Then, the shift of the light spot connected on the light spot position detector 502 is measured. Since the shift of the light spot corresponds to the amount by which the wafer stage cover 702 warps due to the adhesion of the deposited film 116, the deposited amount of the deposited film 116 can be detected with high sensitivity.

According to the third embodiment of the present invention, the deposited film 11 deposited on the wafer stage cover 702 in the processing chamber 101
6, the warping of the cover 702 caused by the
The cover 702 is irradiated with light from the outside, and measurement is performed based on the reflected light to detect the amount of the deposited film 116. Therefore, it is possible to realize a semiconductor device manufacturing method and a manufacturing apparatus capable of measuring the amount and state of a deposited film in an etching chamber from outside the processing chamber without obstructing the vacuum state of the processing chamber. Can be.

In the above-described example, the element structure using an aluminum thin film is shown in FIG. 3, but there is another structure using a thin film of tungsten, platinum or the like. Even in this case, although the type of gas used in the process and the etching conditions are different, the method and procedure for measuring the deposited film thickness are basically the same as those in the above-described example.

In the above-described example, the dry etching process is described as an example. However, the processes can be performed in the same manner in the CVD process and the sputtering process. In any of the processes, when a deposited film adheres to a member housed in the processing chamber or to the processing chamber itself, the amount of deformation of the deposited film can be measured by a similar method. Based on this result, it is possible to start the process of removing the deposited film or to modify the process conditions during the manufacturing process.

[0066]

According to the present invention, the warpage of a member caused by a deposited film deposited on a member in the processing chamber is measured from the reflected light by irradiating the member with light from outside the processing chamber. , Configured to detect the amount of the deposited film. Therefore, it is possible to realize a semiconductor device manufacturing method and a manufacturing apparatus capable of measuring the amount and state of a deposited film in an etching chamber from outside the processing chamber without obstructing the vacuum state of the processing chamber. Can be.

Further, the warpage of the side surface caused by the deposited film deposited on the side surface of the processing chamber is measured by irradiating the processing chamber with light from outside the processing chamber and measuring the amount of the deposited film by the reflected light. It is configured to detect. Therefore, it is possible to realize a semiconductor device manufacturing method and a manufacturing apparatus capable of measuring the amount and state of a deposited film in an etching chamber from outside the processing chamber without obstructing the vacuum state of the processing chamber. Can be.

Further, it is possible to carry out an appropriate cleaning process and to clean the inside of the processing chamber. By reducing the dust generated from the deposited film, it is possible to prevent the defective production of the element portion, and to reduce the fineness. Processing is possible. Further, the yield can be improved and the production cost of the semiconductor device can be reduced.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a manufacturing apparatus that performs a method of manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a flowchart of a device manufacturing procedure.

FIG. 3 is a cross-sectional view of a wiring pattern.

FIG. 4 is a diagram showing a method for measuring a distortion amount by a reflector.

FIG. 5 is an explanatory diagram of an example of measuring the amount of deformation due to adhesion of a deposited film by measuring the position shift of reflected light.

FIG. 6 is a schematic configuration diagram of a manufacturing apparatus that performs a method of manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 7 is a schematic configuration diagram of a manufacturing apparatus that performs a semiconductor device manufacturing method according to a third embodiment of the present invention.

[Explanation of symbols]

 101 Processing Room 102 Lower Chamber 103 Waveguide 104 Microwave 105 Quartz Window 107 Quartz Tube 108 Table 109 Wafer 110 Coil 111 Exhaust Duct 112 Reference Light 113 Irradiation Light 114 Displacement Measuring Device 115 Window 116 Deposited Film 201 Etching Processing Procedure 202 Cleaning Processing Procedure 203 Deposition film thickness measurement procedure 301 Bit line 302 Word line 303 Storage electrode 304 Interlayer insulating film 305 Aluminum thin film 306 Resist 401 Window plate 402 Reflector 403 Deposition film 501 Laser light source 502 Light spot position detector 503 Mirror 601 Upper processing chamber 701 Electrode 702 Wafer base cover

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Miki Yamane 502 Kandachi-cho, Tsuchiura-shi, Ibaraki F-term in Machinery Research Laboratories, Hitachi, Ltd. F-term (reference) BA13 BA14 BB14 BC08 CA01 CA09 CB09 DA04 DA11 DB09 EB08 5F045 BB14 EB06 EC03 GB13

Claims (7)

[Claims] In a method of manufacturing a semiconductor device in which a manufacturing process is performed using a processing chamber and a gas introduced into the processing chamber, the semiconductor device is produced by a deposition film adhered to a surface of the processing chamber or a surface of a member in the processing chamber during a manufacturing process. Measuring the deformation amount of the processing chamber or a member in the processing chamber, comparing the reference value of the deformation amount with the measured deformation amount, based on a comparison between the reference value and the measured deformation amount,
A method for manufacturing a semiconductor device, wherein a specific process such as a process for removing a deposited film is started. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the amount of deformation is measured by reference light generated from the processing chamber or a member in the processing chamber. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the reference light is generated by irradiating light such as a laser from outside the processing chamber. 4. The method of manufacturing a semiconductor device according to claim 1, wherein said manufacturing process includes a process of etching a metal or silicon oxide film, or a process of etching a metal, silicon oxide or silicon film. A method for manufacturing a semiconductor device, which is one of a CVD process for producing a metal film and a sputtering process for producing a metal film. 5. A semiconductor device manufacturing apparatus for performing a manufacturing process by using a processing chamber and a gas introduced into the processing chamber, wherein the deposition film is formed by a deposition film adhered to a surface of the processing chamber or a surface of a member in the processing chamber during a manufacturing process. A deformation amount measuring means for measuring the deformation amount of the processing chamber or a member in the processing chamber, and a comparing means for comparing a reference value of the deformation amount and the deformation amount measured by the deformation amount measuring means, An apparatus for manufacturing a semiconductor device, wherein a specific process such as a process for removing a deposited film is started based on a comparison between a reference value and the measured amount of deformation. 6. An apparatus for manufacturing a semiconductor device according to claim 5, wherein said deformation amount measuring means measures said deformation amount by reference light generated from said processing chamber or a member in said processing chamber. Equipment for manufacturing semiconductor devices. 7. An apparatus for manufacturing a semiconductor device according to claim 6, wherein said deformation measuring means generates reference light by irradiating light such as laser from outside said processing chamber. Equipment for manufacturing semiconductor devices.