JPH0878339A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatusInfo
- Publication number
- JPH0878339A JPH0878339A JP21236094A JP21236094A JPH0878339A JP H0878339 A JPH0878339 A JP H0878339A JP 21236094 A JP21236094 A JP 21236094A JP 21236094 A JP21236094 A JP 21236094A JP H0878339 A JPH0878339 A JP H0878339A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- semiconductor manufacturing
- reaction container
- manufacturing apparatus
- reaction vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造装置におけ
るエッチングの終点判定に係り、特に、CVD装置などの
低圧反応容器の内壁面に付着堆積した堆積物をエッチン
グによりクリーニングする場合に、その終了を判定する
ために好適な半導体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the determination of the end point of etching in a semiconductor manufacturing apparatus, and particularly when the deposit adhered and deposited on the inner wall surface of a low pressure reactor such as a CVD apparatus is cleaned by etching. The present invention relates to a semiconductor manufacturing apparatus suitable for determining.
【０００２】[0002]
【従来の技術】半導体素子の製造では、ウエハに回路作
成を行うために、ＣＶＤ装置やエッチング装置等の種々
の真空処理装置が用いられている。これら装置によるウ
エハの処理過程で、反応容器内に発生する反応生成物等
による微小塵埃がウエハ表面に付着する。これが、半導
体素子製造過程の歩留まりや装置稼働率低下の主原因と
なっている。ウエハ表面に付着する塵埃を低減し、歩留
まりと装置稼働率の向上を図るには、製造装置内の塵埃
を適切に除去，排除（クリーニング）して、反応容器内
を常に、清浄にしておく必要がある。2. Description of the Related Art In the manufacture of semiconductor devices, various vacuum processing apparatuses such as a CVD apparatus and an etching apparatus are used for forming a circuit on a wafer. In the process of processing a wafer by these devices, minute dusts such as reaction products generated in the reaction vessel adhere to the surface of the wafer. This is the main cause of the yield in the semiconductor element manufacturing process and the reduction of the device operating rate. To reduce the amount of dust adhering to the wafer surface and improve the yield and equipment operating rate, it is necessary to properly remove and remove (clean) the dust in the manufacturing equipment and keep the reaction vessel clean. There is.
【０００３】そのため、ガスエッチング等により、壁面
付着堆積物を除去，排除する事が行われる。例えば、特
開平4−155827 号公報に記載の様に、処理容器内に希釈
されたＣｌＦ3 を含むクリーニングガスを供給し、反応
容器のエッチングを抑えながら、処理容器内に付着した
Ｓｉ3Ｎ4系被膜のクリーニングを、短時間で効率良くか
つ安全に行う事により、装置稼働率の大幅な向上を図っ
ている。For this reason, wall deposits are removed or eliminated by gas etching or the like. For example, as described in Japanese Patent Application Laid-Open No. 4-155827, a cleaning gas containing diluted ClF 3 is supplied into the processing container to suppress the etching of the reaction container while Si 3 N 4 attached to the processing container is suppressed. By cleaning the system coating efficiently and safely in a short period of time, we are aiming to significantly improve the operating rate of the equipment.
【０００４】この場合のエッチングプロセスの管理は、
エッチング実行時間の設定により行われる。この方法で
は、堆積物が適切に除去できたかの判定が難しい。つま
り、エッチング不足の場合は、堆積物が残留する。過剰
の場合は、反応容器が損傷する。また、別な終点判定方
法は、特開昭63−5532号公報に記載の様に、ガスプラズ
マによるクリーニングの際、真空チャンバ内の堆積物と
ガスプラズマとの反応生成物、或いは反応によって消費
する物質による発光スペクトルの強度が、クリーニング
の終点で変化することから終点検出装置により終点を検
出するものがある。しかし、この方法では、反応容器と
堆積物の材質が同じ場合、そのエッチングの終点を判定
する事が難しい。例えば、石英製の反応容器の壁面に、
シリコン酸化膜（ＳiＯ2 ）が付着，堆積した場合を考
えると、その材質組成がほぼ同一であるために、前記し
た様な、エッチングの終点判定方法は使用出来ない。The control of the etching process in this case is as follows.
It is performed by setting the etching execution time. With this method, it is difficult to determine whether or not the deposit was properly removed. That is, when the etching is insufficient, the deposit remains. In the case of excess, the reaction vessel is damaged. Further, as another end point determination method, as described in JP-A-63-5532, when cleaning by gas plasma, it is consumed by a reaction product of a deposit in a vacuum chamber and gas plasma, or a reaction. Since the intensity of the emission spectrum of a substance changes at the end point of cleaning, some end point detection devices detect the end point. However, with this method, it is difficult to determine the end point of the etching when the material of the reaction vessel and the material of the deposit are the same. For example, on the wall of a quartz reaction vessel,
Considering the case where the silicon oxide film (SiO 2 ) is attached and deposited, the etching end point determination method as described above cannot be used because the material composition is almost the same.
【０００５】[0005]
【発明が解決しようとする課題】本発明の目的は、半導
体製造装置の反応容器の壁面に付着，堆積した反応生成
物を、反応容器への損傷を少なくして、効率良く除去す
ることにある。SUMMARY OF THE INVENTION It is an object of the present invention to efficiently remove reaction products attached to and deposited on the wall surface of a reaction container of a semiconductor manufacturing apparatus while reducing damage to the reaction container. .
【０００６】[0006]
【課題を解決するための手段】本発明は、上記課題を解
決するために、(1）反応容器の内壁面に、反応容器の材
質と異なる膜をコーティングする。(2）反応容器内に、
反応容器の材質と異なる被エッチング材を設置する。
(3）ガスエッチングによる放出ガスの特定成分の濃度変
化を、Ｑ−ＭＡＳＳ，ガスクロマトグラフィ，発光分光
分析法などを用いて検出する。(3）反応容器内に、水晶
発振子型の膜厚計を設置する。In order to solve the above problems, the present invention (1) coats the inner wall surface of a reaction container with a film different from the material of the reaction container. (2) In the reaction vessel,
A material to be etched different from the material of the reaction vessel is installed.
(3) A change in the concentration of a specific component of the released gas due to gas etching is detected by using Q-MASS, gas chromatography, emission spectroscopy, or the like. (3) Install a crystal oscillator type film thickness meter in the reaction vessel.
【０００７】[0007]
【作用】本発明の半導体製造装置では、反応容器の材質
と異なる膜を、予め反応容器の内壁面にコーティングす
るか、反応容器内に反応容器の壁面材質と異なる被エッ
チング材を設置する。そして、反応容器の壁面上に堆積
する堆積膜の組成が反応容器の材質と同じ場合に、堆積
膜をガスエッチングで除去する事を考える。被エッチン
グ材部分に堆積した堆積膜がエッチングにより、取り除
かれると、コーティング膜あるいは被エッチング材がエ
ッチングされるので、反応容器内の反応ガスの成分が変
化する。この変化を、Ｑ−ＭＡＳＳ，ガスクロマトグラ
フィや発光分光分析法により検出する事により、エッチ
ングの終了を判定する。In the semiconductor manufacturing apparatus of the present invention, a film different from the material of the reaction container is coated on the inner wall surface of the reaction container in advance, or a material to be etched different from the wall material of the reaction container is installed in the reaction container. Then, when the composition of the deposited film deposited on the wall surface of the reaction container is the same as the material of the reaction container, it is considered to remove the deposited film by gas etching. When the deposited film deposited on the material to be etched is removed by etching, the coating film or the material to be etched is etched, so that the components of the reaction gas in the reaction vessel change. The end of etching is judged by detecting this change by Q-MASS, gas chromatography or emission spectroscopy.
【０００８】また、水晶発振子などを反応容器内に設置
すると、この部分にも、反応容器の壁面と同様に反応生
成物が付着，堆積する。そうすると、水晶発振子の質量
が大きくなり、水晶発振子の振動数が低下する。この状
態で、ガスエッチングすると水晶発振子に堆積した堆積
膜もエッチングされて、徐々に、堆積量が減少し、最終
的には、無くなり、水晶発振子の振動数が、堆積膜が付
着，堆積する前の振動数に戻るため、エッチングの終了
を判定する。When a crystal oscillator or the like is installed in the reaction container, the reaction product adheres to and deposits on this portion as well as on the wall surface of the reaction container. Then, the mass of the crystal oscillator increases and the frequency of the crystal oscillator decreases. When gas etching is performed in this state, the deposited film deposited on the crystal oscillator is also etched, and the deposited amount gradually decreases and finally disappears, and the frequency of the crystal oscillator is determined to be such that the deposited film adheres and deposits. Since the frequency returns to that before the etching, the end of etching is determined.
【０００９】[0009]
【実施例】以下、本発明の内容を図１から図９を用いて
説明する。図１は本発明の第一実施例の半導体製造装置
のブロック図、図２は堆積膜の付着状態の説明図、図３
はエッチング時間と窒素ガス濃度の関係を示す説明図で
ある。図４は本発明の第二実施例の半導体製造装置のブ
ロック図、図５は堆積膜の付着状態の説明図、図６は本
発明の第三実施例の半導体製造装置の説明図、図７は堆
積膜の付着状態の説明図、図８はエッチング時間と窒素
ガス濃度の関係を示す説明図である。図９は本発明の第
四実施例の半導体製造装置のブロック図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The contents of the present invention will be described below with reference to FIGS. FIG. 1 is a block diagram of a semiconductor manufacturing apparatus according to a first embodiment of the present invention, FIG. 2 is an explanatory view of a deposited film attachment state, and FIG.
FIG. 4 is an explanatory diagram showing the relationship between etching time and nitrogen gas concentration. FIG. 4 is a block diagram of a semiconductor manufacturing apparatus according to a second embodiment of the present invention, FIG. 5 is an explanatory view of a deposited state of a deposited film, FIG. 6 is an explanatory view of a semiconductor manufacturing apparatus of a third embodiment of the present invention, and FIG. FIG. 8 is an explanatory diagram of a deposited state of a deposited film, and FIG. 8 is an explanatory diagram showing a relationship between etching time and nitrogen gas concentration. FIG. 9 is a block diagram of a semiconductor manufacturing apparatus according to the fourth embodiment of the present invention.
【００１０】図１から図３を用いて、本発明の第一実施
例を説明する。図１に示す様に、この実施例では、反応
容器１にロードロック室１２，ガス分析器１０が接続さ
れている。反応容器１の内部にウエハ２が置かれ、反応
容器１の外側にヒータ３が設置されている。この様な、
装置構成において、まず、始めに、ロードロック室１２
から反応容器１内にダミーウエハ２１を導入し、ヒータ
３により、設定温度に加熱した状態で、コーティング膜
２０用のコーティング膜用原料ガス２２を、ガス供給系
４から反応容器１内に供給すると、ガス反応が起こり、
図２に示す様に、反応容器１の壁面上に、均等厚さでコ
ーティング膜２０が成膜される。反応後のガスは、真空
ポンプ５，除害装置６を経て外部に排気される。A first embodiment of the present invention will be described with reference to FIGS. 1 to 3. As shown in FIG. 1, in this embodiment, a load lock chamber 12 and a gas analyzer 10 are connected to the reaction vessel 1. A wafer 2 is placed inside the reaction vessel 1, and a heater 3 is placed outside the reaction vessel 1. Like this,
In the device configuration, first, the load lock chamber 12
When the dummy wafer 21 is introduced into the reaction container 1 from the above, and the coating film raw material gas 22 for the coating film 20 is supplied from the gas supply system 4 into the reaction container 1 while being heated to the set temperature by the heater 3, A gas reaction occurs,
As shown in FIG. 2, the coating film 20 is formed on the wall surface of the reaction container 1 with a uniform thickness. The gas after the reaction is exhausted to the outside through the vacuum pump 5 and the abatement device 6.
【００１１】その後、ロードロック室１２から反応容器
１内にウエハ２を導入し、ヒータ３により、設定温度に
加熱した状態で、原料ガス８を、ガス供給系４から反応
容器１内に供給すると、ガス反応が起こり、ウエハ２表
面に所望の膜が成膜され、図２に示す様に、反応容器１
のコーティング膜２０表面上に、均等厚さで堆積膜１６
が堆積する。反応後のガスは、真空ポンプ５，除害装置
６を経て外部に排気される。所望の膜が成膜されたウエ
ハ２は、反応容器１内からロードロック室１２に取り出
される。そして、また、ウエハ２が反応容器１内に導入
され、成膜後に取り出される。この様な、成膜プロセス
が数回以上繰り返されると、反応容器１内の堆積膜１６
の膜厚が増加してくる。そうすると、熱履歴，振動，膜
の真性応力などが原因となって、次第に壁面から、堆積
膜１６が剥がれ易くなり、剥がれた堆積膜１６が成膜中
のウエハ２に付着する様になる。After that, when the wafer 2 is introduced into the reaction container 1 from the load lock chamber 12 and heated by the heater 3 to the set temperature, the source gas 8 is supplied from the gas supply system 4 into the reaction container 1. , A gas reaction occurs, a desired film is formed on the surface of the wafer 2, and as shown in FIG.
Of the deposited film 16 with a uniform thickness on the surface of the coating film 20 of
Accumulates. The gas after the reaction is exhausted to the outside through the vacuum pump 5 and the abatement device 6. The wafer 2 on which a desired film is formed is taken out of the reaction container 1 into the load lock chamber 12. Then, the wafer 2 is again introduced into the reaction container 1 and taken out after the film formation. When such a film forming process is repeated several times or more, the deposited film 16 in the reaction container 1
The film thickness of is increasing. Then, due to thermal history, vibration, intrinsic stress of the film, etc., the deposited film 16 gradually becomes easy to peel off from the wall surface, and the peeled deposited film 16 adheres to the wafer 2 being formed.
【００１２】この様な事態を避けるために、定期的に、
エッチングガス９をガス供給系４から反応容器１内に供
給し、反応容器１のコーティング膜２０表面上に付着堆
積した堆積膜１６をエッチングにより除去する。エッチ
ング後のガスは、真空ポンプ５，除害装置６を経て外部
に排気される。このエッチングの終了は、反応ガスの成
分変化をガス分析器１０で監視する事により判定する。In order to avoid such a situation, regularly
The etching gas 9 is supplied from the gas supply system 4 into the reaction container 1, and the deposited film 16 deposited on the surface of the coating film 20 of the reaction container 1 is removed by etching. The gas after etching is exhausted to the outside through the vacuum pump 5 and the abatement device 6. The completion of this etching is determined by monitoring the change in the components of the reaction gas with the gas analyzer 10.
【００１３】例えば、石英製の反応容器１内に、ヒータ
３の赤外線に対して、光学的に透明で、反応容器内の温
度分布に影響を与えないＳｉ3Ｎ4膜を、反応容器の壁面
にコーティングし、壁面に堆積した堆積膜１６(シリコ
ン酸化膜（ＳiＯ2))をＣｌＦ3でガスエッチングする事
を考える。シリコン酸化膜（ＳiＯ2 ）をＣｌＦ3でガス
エッチングすると、その時の化学反応式は、以下の様に
なる。For example, a Si 3 N 4 film, which is optically transparent to infrared rays from the heater 3 and does not affect the temperature distribution in the reaction vessel, is provided in the reaction vessel 1 made of quartz. It is considered that the deposited film 16 (silicon oxide film (SiO 2 )) which is coated on the wall surface and is deposited on the wall surface is gas-etched with ClF 3 . When the silicon oxide film (SiO 2 ) is gas-etched with ClF 3 , the chemical reaction formula at that time is as follows.
【００１４】[0014]
【化１】 ＳｉＯ2＋２ＣｌＦ3＝Ｏ2＋ＳｉＦ4＋２ＣｌＦ …（化１） また、Ｓｉ3Ｎ4製のコーティング膜２０がエッチングさ
れると、その時の化学反応式は、以下の様になる。Embedded image SiO 2 + 2ClF 3 ═O 2 + SiF 4 + 2ClF (Formula 1) Further, when the coating film 20 made of Si 3 N 4 is etched, the chemical reaction formula at that time is as follows.
【００１５】[0015]
【化２】 Ｓｉ3Ｎ4＋６ＣｌＦ3＝２Ｎ2＋３ＳｉＦ4＋６ＣｌＦ …（化２） この様に、コーティング膜２０がＣｌＦ3により、エッ
チングされると、SiO2のエッチングでは、発生しなかっ
た窒素（Ｎ2 ）ガスが反応容器１内に放出される様にな
る。Embedded image Si 3 N 4 + 6ClF 3 = 2N 2 + 3SiF 4 + 6ClF (Formula 2) As described above, when the coating film 20 is etched by ClF 3 , nitrogen (which is not generated by the etching of SiO 2 ( The N 2 ) gas is released into the reaction vessel 1.
【００１６】従って、図３に示す様に、エッチング時間
の経過に伴う、反応容器１内の窒素ガス濃度の変化を監
視すれば、エッチングが終了したかどうかを判定でき
る。つまり、エッチングの開始から、暫くの期間窒素ガ
スの濃度が零であるが、突然急峻に立ち上がる事が分か
る。これは、エッチング開始から、堆積膜１６を除去し
ている間は、ガス中に窒素が存在しないためである。堆
積膜１６が完全に除去されると、次第に、反応容器１壁
面のコーティング膜２０の表面が、エッチングされる様
になり、コーティング膜２０に含まれる窒素ガス分子が
ガス中に存在する様になる。Therefore, as shown in FIG. 3, by monitoring the change in the nitrogen gas concentration in the reaction vessel 1 with the elapse of the etching time, it can be determined whether or not the etching is completed. That is, it can be seen that the nitrogen gas concentration is zero for a while from the start of etching, but suddenly rises sharply. This is because nitrogen is not present in the gas from the start of etching until the deposited film 16 is removed. When the deposited film 16 is completely removed, the surface of the coating film 20 on the wall surface of the reaction vessel 1 is gradually etched, and nitrogen gas molecules contained in the coating film 20 are present in the gas. .
【００１７】この様にして、エッチングの終了判定を行
う事により、反応容器１に損傷を与える事なく、効率的
に反応容器１内の堆積膜１６をクリーニング出来、装置
の安定稼働が実現出来るので、装置稼働率及び歩留まり
が向上する。By thus determining the end of etching, the deposited film 16 in the reaction vessel 1 can be efficiently cleaned without damaging the reaction vessel 1, and stable operation of the apparatus can be realized. , The equipment availability and the yield are improved.
【００１８】図４，図５，図３を用いて、本発明の第二
実施例を説明する。図４に示す様に、この実施例では、
反応容器１にロードロック室１２，ガス分析器１０が接
続されている。反応容器１の内部にウエハ２が置かれ、
反応容器１の壁面上に平板状の被エッチング材７が、反
応容器１の外側にヒータ３が設置されている。A second embodiment of the present invention will be described with reference to FIGS. 4, 5 and 3. As shown in FIG. 4, in this embodiment,
A load lock chamber 12 and a gas analyzer 10 are connected to the reaction container 1. The wafer 2 is placed inside the reaction container 1,
A flat plate-shaped material to be etched 7 is installed on the wall surface of the reaction container 1, and a heater 3 is installed outside the reaction container 1.
【００１９】この様な、装置構成で、ロードロック室１
２から反応容器１内にウエハ２を導入し、ヒータ３によ
り、設定温度に加熱した状態で、原料ガス８を、ガス供
給系４から反応容器１内に供給すると、ガス反応が起こ
り、ウエハ２表面に所望の膜が成膜されると同時に、図
５に示す様に、反応容器１及び被エッチング材７の壁面
上に、均等厚さで堆積膜１６が堆積する。反応後のガス
は、真空ポンプ５，除害装置６を経て外部に排気され
る。所望の膜が成膜されたウエハ２は、反応容器１内か
らロードロック室１２に取り出される。そして、また、
ウエハ２が反応容器１内に導入され、成膜後に取り出さ
れる。この様な、プロセスが数回以上繰り返されると、
反応容器１内の堆積膜の膜厚が増加してくる。そうする
と、熱履歴，振動，膜の真性応力などが原因となって、
次第に壁面から、堆積膜１６が剥がれ易くなり、剥がれ
た膜が成膜中のウエハ２に付着する様になる。With such a device configuration, the load lock chamber 1
When the raw material gas 8 is supplied from the gas supply system 4 into the reaction container 1 while the wafer 2 is introduced into the reaction container 1 from 2 and heated to the set temperature by the heater 3, a gas reaction occurs and the wafer 2 At the same time that a desired film is formed on the surface, as shown in FIG. 5, the deposited film 16 is deposited on the wall surfaces of the reaction container 1 and the material to be etched 7 with a uniform thickness. The gas after the reaction is exhausted to the outside through the vacuum pump 5 and the abatement device 6. The wafer 2 on which a desired film is formed is taken out of the reaction container 1 into the load lock chamber 12. and again,
The wafer 2 is introduced into the reaction container 1 and taken out after the film formation. When this process is repeated several times or more,
The film thickness of the deposited film in the reaction container 1 increases. Then, due to thermal history, vibration, intrinsic stress of the film, etc.,
The deposited film 16 gradually peels off from the wall surface, and the peeled film adheres to the wafer 2 during film formation.
【００２０】この様な事態を避けるために、定期的に、
エッチングガス９をガス供給系４から反応容器１内に供
給し、反応容器１及び被エッチング材７の壁面に付着堆
積した堆積膜をエッチングにより除去する。エッチング
後のガスは、真空ポンプ５，除害装置６を経て外部に排
気される。このエッチングの終了は、反応ガスの成分変
化をガス分析器１０で監視する事により判定する。In order to avoid such a situation, regularly
The etching gas 9 is supplied from the gas supply system 4 into the reaction container 1, and the deposited film adhered and deposited on the wall of the reaction container 1 and the material to be etched 7 is removed by etching. The gas after etching is exhausted to the outside through the vacuum pump 5 and the abatement device 6. The completion of this etching is determined by monitoring the change in the components of the reaction gas with the gas analyzer 10.
【００２１】例えば、石英製の反応容器１内に、Ｓｉ3
Ｎ4製の被エッチング材７を設置し、壁面に堆積した堆
積膜１６（シリコン酸化膜（ＳｉＯ2））をＣｌＦ3でガ
スエッチングする事を考える。シリコン酸化膜（ＳｉＯ
2）をＣｌＦ3でガスエッチングすると、その時の化学反
応式は、以下の様になる。For example, in a reaction vessel 1 made of quartz, Si 3
It is considered that the material to be etched 7 made of N 4 is installed and the deposited film 16 (silicon oxide film (SiO 2 )) deposited on the wall surface is gas-etched with ClF 3 . Silicon oxide film (SiO
When 2 ) is gas-etched with ClF 3 , the chemical reaction formula at that time is as follows.
【００２２】[0022]
【化３】 ＳｉＯ2＋２ＣｌＦ3＝Ｏ2＋ＳｉＦ4＋２ＣｌＦ …（化３） また、Ｓｉ3Ｎ4製の被エッチング材７がエッチングされ
ると、その時の化学反応式は、以下の様になる。Embedded image SiO 2 + 2ClF 3 ═O 2 + SiF 4 + 2ClF (Formula 3) Further, when the material to be etched 7 made of Si 3 N 4 is etched, the chemical reaction formula at that time is as follows.
【００２３】[0023]
【化４】 Ｓｉ3Ｎ4＋６ＣｌＦ3＝２Ｎ2＋３ＳｉＦ4＋６ＣｌＦ …（化４） この様に、被エッチング材７がＣｌＦ3により、エッチ
ングされると、ＳｉＯ2のエッチングでは、発生しなか
った窒素（Ｎ2 ）ガスが反応容器１内に放出される様に
なる。従って、図３に示す様に、エッチング時間の経過
に伴う、反応容器１内の窒素ガス濃度の変化を監視すれ
ば、エッチングが終了したかどうかを判定できる。つま
り、エッチングの開始から、暫くの期間窒素ガス濃度が
零であるが、突然急峻に立ち上がる事が分かる。これ
は、エッチング開始から、堆積膜１６を除去している間
は、ガス中に窒素が存在しないためである。堆積膜１６
が完全に除去されると、次第に、反応容器１壁面及び被
エッチング材７の表面が、エッチングされる様になり、
被エッチング材７の材料に含まれる窒素ガス分子がガス
中に存在する様になるためである。Embedded image Si 3 N 4 + 6ClF 3 = 2N 2 + 3SiF 4 + 6ClF (Formula 4) As described above, when the material 7 to be etched is etched by ClF 3 , nitrogen that is not generated by etching of SiO 2 is generated. The (N 2 ) gas is released into the reaction container 1. Therefore, as shown in FIG. 3, it is possible to determine whether or not the etching is completed by monitoring the change in the nitrogen gas concentration in the reaction vessel 1 with the passage of the etching time. That is, it can be seen that the nitrogen gas concentration is zero for a while from the start of etching, but suddenly rises sharply. This is because nitrogen is not present in the gas from the start of etching until the deposited film 16 is removed. Deposited film 16
When is completely removed, the wall surface of the reaction vessel 1 and the surface of the material to be etched 7 are gradually etched,
This is because nitrogen gas molecules contained in the material of the material to be etched 7 are present in the gas.
【００２４】この様にして、エッチングの終了判定を行
う事により、反応容器１に損傷を与える事なく、効率的
に反応容器１内の堆積膜１６をクリーニング出来、装置
の安定稼働が実現出来るので、装置稼働率及び歩留まり
が向上する。By thus determining the end of etching, the deposited film 16 in the reaction vessel 1 can be efficiently cleaned without damaging the reaction vessel 1, and stable operation of the apparatus can be realized. , The equipment availability and the yield are improved.
【００２５】第二実施例では、被エッチング材７の形状
がシート状であり、それを、反応容器１内に置いた場合
につて説明した。しかし、被エッチング材７は、棒状な
ど、どの様な形状であっても良い。また、その設置の方
法についても、反応容器１の壁面に埋め込むなどの方法
でも良い。In the second embodiment, the material 7 to be etched has a sheet shape, and the case where it is placed in the reaction vessel 1 has been described. However, the material to be etched 7 may have any shape such as a rod shape. Further, the installation method may also be a method such as embedding in the wall surface of the reaction container 1.
【００２６】図６から図８を用いて、本発明の第三実施
例について説明する。図６に示す様に、この実施例で
は、反応容器１にロードロック室１２，ガス分析器１０
が接続されている。反応容器１の内部にウエハ２が置か
れ、反応容器１の壁面上に平板状の被エッチング材７と
１９が、反応容器１の外側にヒータ３が設置されてい
る。A third embodiment of the present invention will be described with reference to FIGS. 6 to 8. As shown in FIG. 6, in this embodiment, the reaction container 1 has a load lock chamber 12 and a gas analyzer 10.
Is connected. A wafer 2 is placed inside the reaction vessel 1, flat plate-shaped materials 7 and 19 are provided on the wall surface of the reaction vessel 1, and a heater 3 is provided outside the reaction vessel 1.
【００２７】この様な、装置構成において、第二実施例
と同様の成膜プロセスを実施した時に、図７に示す様
に、第１の被エッチング材７に厚く、第二の被エッチン
グ材１８に薄く、堆積膜１６が堆積した場合に、堆積膜
１６をエッチングにより除去する。When the film forming process similar to that of the second embodiment is performed in such an apparatus structure, as shown in FIG. 7, the first etching target material 7 is thick and the second etching target material 18 is thick. If the deposited film 16 is very thin, the deposited film 16 is removed by etching.
【００２８】この時、図８に示す様に、エッチング開始
から、堆積膜１６を除去している間は、ガス中に窒素ガ
スが存在しないために、暫くの期間窒素ガスの濃度が零
である。しかし、第二の被エッチング材１９上の薄い堆
積膜１６が除去されると、次第に、反応容器１壁面及び
被エッチング材１９の表面が、エッチングされる様にな
り、被エッチング材１８の材料に含まれる窒素ガス分子
がガス中に存在する様になり、窒素ガス分子の濃度が急
峻に立ち上がる。さらに、第一の被エッチング材７上の
厚い堆積膜１６が除去されると、被エッチング材７がエ
ッチングされる様になり、さらに、窒素ガスの濃度が上
昇する。At this time, as shown in FIG. 8, since the nitrogen gas does not exist in the gas during the removal of the deposited film 16 from the start of the etching, the concentration of the nitrogen gas is zero for a while. . However, when the thin deposited film 16 on the second material to be etched 19 is removed, the wall surface of the reaction vessel 1 and the surface of the material to be etched 19 are gradually etched, and the material of the material to be etched 18 is changed. The contained nitrogen gas molecules come to exist in the gas, and the concentration of the nitrogen gas molecules rises sharply. Further, when the thick deposited film 16 on the first material 7 to be etched is removed, the material 7 to be etched comes to be etched, and the concentration of nitrogen gas is further increased.
【００２９】以上の様に、エッチング時間の経過に伴
う、反応容器１内の窒素ガス濃度の変化を監視する事に
より、反応容器１内の場所毎のエッチング状況に応じ
て、エッチングの終了を決定できる。As described above, by observing the change in the nitrogen gas concentration in the reaction vessel 1 with the passage of the etching time, the end of the etching is decided according to the etching condition at each place in the reaction vessel 1. it can.
【００３０】この様にして、エッチングの終了を決定す
る事により、反応容器１内の堆積膜１６を効率的にクリ
ーニング出来、装置が安定に稼働するので、装置稼働率
及び歩留まりが向上すると言う効果がある。By thus determining the end of the etching, the deposited film 16 in the reaction vessel 1 can be efficiently cleaned and the apparatus operates stably, so that the apparatus operating rate and the yield are improved. There is.
【００３１】第三実施例では、二つの被エッチング材７
及び１９の材質が同じ場合について説明したが、異なる
材質であっても同様の効果が得られる。In the third embodiment, two materials to be etched 7
Although the case where the materials of 19 and 19 are the same has been described, the same effect can be obtained even if the materials are different.
【００３２】図９を用いて、本発明の第四実施例を説明
する。図９に示す様に、この実施例では、反応容器１に
ロードロック室１２，水晶発振子１７のコントローラ１
８が接続されている。反応容器１の内部にウエハ２が置
かれ、反応容器１内に水晶発振子１７が、反応容器１の
外側にヒータ３が設置されている。A fourth embodiment of the present invention will be described with reference to FIG. As shown in FIG. 9, in this embodiment, the controller 1 for the load lock chamber 12 and the crystal oscillator 17 is provided in the reaction vessel 1.
8 is connected. A wafer 2 is placed inside the reaction container 1, a crystal oscillator 17 is installed inside the reaction container 1, and a heater 3 is installed outside the reaction container 1.
【００３３】この様な、装置構成において、第一実施例
と同様の成膜プロセスを実施した時に、水晶発振子１７
上に、堆積膜１６が堆積すると、水晶発振子１７の質量
が増加するために、水晶発振子１７の振動数が低下す
る。In such an apparatus configuration, when the film forming process similar to that of the first embodiment is carried out, the crystal oscillator 17
When the deposition film 16 is deposited on the crystal oscillator 17, the mass of the crystal oscillator 17 increases, and the frequency of the crystal oscillator 17 decreases.
【００３４】この様な状態で、堆積膜１６をエッチング
により除去すると、次第に、水晶発振子１７上の堆積膜
１６も徐々に減少するために、振動数が次第に増加し
て、堆積膜が付着する前の振動数に戻る。この時点を、
エッチングの終了とする。When the deposited film 16 is removed by etching in such a state, the deposited film 16 on the crystal oscillator 17 also gradually decreases, so that the frequency gradually increases and the deposited film adheres. Return to the previous frequency. At this point
This is the end of etching.
【００３５】この様にして、エッチングの終了を決定す
る事により、反応容器１内の堆積膜１６を効率的にクリ
ーニング出来、装置が安定稼働するので、装置稼働率及
び歩留まりが向上すると言う効果がある。By determining the end of etching in this manner, the deposited film 16 in the reaction vessel 1 can be efficiently cleaned and the apparatus operates stably, so that the apparatus operating rate and the yield are improved. is there.
【００３６】ここでは、半導体製造装置として、ＣＶＤ
装置を例にとり実施例を説明したが、本発明は、他のＣ
ＶＤ装置，エッチング，スパッタ装置等の半導体製造装
置への適用も、当然可能である。Here, as a semiconductor manufacturing apparatus, CVD is used.
Although the embodiment has been described by taking the apparatus as an example, the present invention is not limited to the other C
Of course, application to semiconductor manufacturing equipment such as VD equipment, etching equipment, and sputtering equipment is also possible.
【００３７】[0037]
【発明の効果】本発明によれば、ＣＶＤ装置等の低圧反
応容器の壁面に付着，堆積した反応生成物を、反応容器
に損傷を与える事なしに、除去出来る様になり、装置の
長期安定稼働による装置稼働率及び歩留まりが向上す
る。EFFECTS OF THE INVENTION According to the present invention, the reaction product adhered to and deposited on the wall surface of a low-pressure reaction vessel such as a CVD apparatus can be removed without damaging the reaction vessel, and the apparatus is stable for a long period of time. The operation rate and yield of the equipment are improved.
【図１】本発明の第一実施例の半導体製造装置のブロッ
ク図。FIG. 1 is a block diagram of a semiconductor manufacturing apparatus according to a first embodiment of the present invention.
【図２】堆積膜の付着状態の説明図。FIG. 2 is an explanatory diagram of a deposited state of a deposited film.
【図３】エッチング時間と窒素ガス濃度の関係を示す説
明図。FIG. 3 is an explanatory diagram showing a relationship between etching time and nitrogen gas concentration.
【図４】本発明の第二実施例の半導体製造装置のブロッ
ク図。FIG. 4 is a block diagram of a semiconductor manufacturing apparatus according to a second embodiment of the present invention.
【図５】堆積膜の付着状態の説明図。FIG. 5 is an explanatory view of an attached state of a deposited film.
【図６】本発明の第三実施例の半導体製造装置の説明
図。FIG. 6 is an explanatory diagram of a semiconductor manufacturing apparatus according to a third embodiment of the present invention.
【図７】堆積膜の付着状態の説明図。FIG. 7 is an explanatory diagram of an attached state of a deposited film.
【図８】エッチング時間と窒素ガス濃度の関係を示す説
明図。FIG. 8 is an explanatory diagram showing the relationship between etching time and nitrogen gas concentration.
【図９】本発明の第四実施例の半導体製造装置のブロッ
ク図。FIG. 9 is a block diagram of a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention.
１…反応容器、２…ウエハ、３…ヒータ、４…ガス供給
系、５…真空ポンプ、６…除害装置、７…被エッチング
材、８…原料ガス、９…エッチングガス、１０…ガス分
析器、１１…バルブ、１２…ロードロック室、１３…ウ
エハ支持台、１４…ゲートバルブ、１５…ガス供給管、
２０…コーティング膜、２１…ダミーウエハ、２２…原
料ガス。DESCRIPTION OF SYMBOLS 1 ... Reaction container, 2 ... Wafer, 3 ... Heater, 4 ... Gas supply system, 5 ... Vacuum pump, 6 ... Harm removal device, 7 ... Etching material, 8 ... Raw material gas, 9 ... Etching gas, 10 ... Gas analysis Container, 11 ... Valve, 12 ... Load lock chamber, 13 ... Wafer support, 14 ... Gate valve, 15 ... Gas supply pipe,
20 ... Coating film, 21 ... Dummy wafer, 22 ... Raw material gas.
Claims (12)
るためのガス供給系，前記ガスを排気するためのガス排
気系，ウエハ加熱冷却機構及びプラズマ源、または、ど
ちらか一つにより構成し、前記反応容器内に設置したウ
エハに成膜やエッチングを行う半導体製造装置におい
て、前記反応容器の材質と異なる膜を、予め前記反応容
器の内壁面にコーティングした事を特徴とする半導体製
造装置。1. A reaction vessel, a gas supply system for introducing gas into the reaction vessel, a gas exhaust system for exhausting the gas, a wafer heating / cooling mechanism and a plasma source, or any one of them. Then, in the semiconductor manufacturing apparatus for performing film formation or etching on the wafer installed in the reaction container, the semiconductor manufacturing apparatus characterized in that a film different from the material of the reaction container is coated on the inner wall surface of the reaction container in advance. .
るためのガス供給系，ガスを排気するためのガス排気
系，ウエハ加熱冷却機構及びプラズマ源、または、どち
らか一つにより構成し、前記反応容器内に設置したウエ
ハに成膜やエッチングを行う半導体製造装置において、
前記反応容器の材質と異なる膜がコーティングされた材
料で出来た反応容器を有することを特徴とする半導体製
造装置。2. A reaction vessel, a gas supply system for introducing gas into the reaction vessel, a gas exhaust system for exhausting gas, a wafer heating / cooling mechanism and a plasma source, or any one of them. In a semiconductor manufacturing apparatus for performing film formation or etching on a wafer installed in the reaction container,
A semiconductor manufacturing apparatus comprising a reaction container made of a material coated with a film different from the material of the reaction container.
るためのガス供給系，ガスを排気するためのガス排気
系、ウエハ加熱冷却機構及びプラズマ源、または、どち
らか一つにより構成し、前記反応容器内に設置したウエ
ハに成膜やエッチングを行う半導体製造装置において、
前記反応容器内に、前記反応容器の材質と異なる複数個
の被エッチング材を設置した事を特徴とする半導体製造
装置。3. A reaction vessel, a gas supply system for introducing gas into the reaction vessel, a gas exhaust system for exhausting gas, a wafer heating / cooling mechanism and a plasma source, or any one of them. In a semiconductor manufacturing apparatus for performing film formation or etching on a wafer installed in the reaction container,
A semiconductor manufacturing apparatus, wherein a plurality of materials to be etched different from the material of the reaction container are installed in the reaction container.
の材質を石英，コーティング膜の材質をＳｉ3Ｎ4にした
半導体製造装置。4. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction vessel is made of quartz and the coating film is made of Si 3 N 4 .
石英，被エッチング材の材質をＳｉ3Ｎ4にした半導体製
造装置。5. The semiconductor manufacturing apparatus according to claim 3, wherein the material of the reaction vessel is quartz and the material of the material to be etched is Si 3 N 4 .
るためのガス供給系，ガスを排気するためのガス，排気
系，ウエハ加熱冷却機構及びプラズマ源、または、どち
らか一つにより構成し、前記反応容器内に設置したウエ
ハに成膜やエッチングを行う半導体製造装置において、
前記反応容器内に、水晶発振子型の膜厚計を設置した半
導体製造装置。6. A reaction vessel, a gas supply system for introducing gas into the reaction vessel, a gas for exhausting gas, an exhaust system, a wafer heating / cooling mechanism and a plasma source, or any one of them. Then, in the semiconductor manufacturing apparatus that performs film formation and etching on the wafer installed in the reaction container,
A semiconductor manufacturing apparatus in which a crystal oscillator-type film thickness meter is installed in the reaction container.
ング材の形状をシート状にし、前記反応容器内壁面に張
りつけた半導体製造装置。7. The semiconductor manufacturing apparatus according to claim 3 or 5, wherein the material to be etched has a sheet shape and is attached to an inner wall surface of the reaction container.
を、前記反応容器内壁面に埋め込んだ半導体製造装置。8. The semiconductor manufacturing apparatus according to claim 7, wherein the material to be etched is embedded in the inner wall surface of the reaction container.
ング材の形状を棒状にし、前記反応容器内壁面に埋め込
んだ半導体製造装置。9. The semiconductor manufacturing apparatus according to claim 3, wherein the material to be etched is rod-shaped and embedded in the inner wall surface of the reaction container.
は９において、前記反応容器の壁面に付着した堆積物を
エッチングにより除去する場合に、前記反応容器の材質
と異なる被エッチング材部分からの放出ガスの濃度変化
を検出し、エッチングプロセスの終了などの管理を行う
様にした半導体製造装置。10. A material different from the material of the reaction vessel according to claim 1, 2, 3, 4, 5, 7, 8 or 9, when the deposit attached to the wall surface of the reaction vessel is removed by etching. A semiconductor manufacturing device that detects changes in the concentration of released gas from the etching material and controls the end of the etching process.
置した水晶発振子型の膜厚計の出力を用いて、エッチン
グプロセスの終了などの管理を行う半導体製造装置。11. The semiconductor manufacturing apparatus according to claim 3, wherein the output of a crystal oscillator type film thickness meter installed in the reaction vessel is used to control the end of the etching process and the like.
置のいずれかを用いて製造した半導体素子。12. A semiconductor device manufactured by using any one of the semiconductor manufacturing apparatuses according to claim 1. Description:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21236094A JPH0878339A (en) | 1994-09-06 | 1994-09-06 | Semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21236094A JPH0878339A (en) | 1994-09-06 | 1994-09-06 | Semiconductor manufacturing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0878339A true JPH0878339A (en) | 1996-03-22 |
Family
ID=16621265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21236094A Pending JPH0878339A (en) | 1994-09-06 | 1994-09-06 | Semiconductor manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0878339A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6211081B1 (en) | 1996-04-03 | 2001-04-03 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device in a CVD reactive chamber |
| US6914207B2 (en) | 2002-02-27 | 2005-07-05 | Hitachi High-Technologies Corporation | Plasma processing method |
| JP2006339253A (en) * | 2005-05-31 | 2006-12-14 | Toshiba Corp | Plasma processing device and method |
| JP2007510288A (en) * | 2003-09-30 | 2007-04-19 | 東京エレクトロン株式会社 | Method for monitoring the status of system components and processing system therefor |
-
1994
- 1994-09-06 JP JP21236094A patent/JPH0878339A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6211081B1 (en) | 1996-04-03 | 2001-04-03 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device in a CVD reactive chamber |
| US6383897B2 (en) | 1996-04-03 | 2002-05-07 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a semiconductor device in a CVD reactive chamber |
| US6914207B2 (en) | 2002-02-27 | 2005-07-05 | Hitachi High-Technologies Corporation | Plasma processing method |
| JP2007510288A (en) * | 2003-09-30 | 2007-04-19 | 東京エレクトロン株式会社 | Method for monitoring the status of system components and processing system therefor |
| JP2006339253A (en) * | 2005-05-31 | 2006-12-14 | Toshiba Corp | Plasma processing device and method |
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