JP2001024144A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively obtain decoupling of high-frequency components in an internal circuit for an LSI. SOLUTION: A chip capacitor 4 for removing a high-frequency component is inserted into a through-hole 3 formed to a semiconductor chip substrate 1. Since the chip capacitor 4 is arranged at a position nearest to an internal circuit for an LSI, unnecessary impedance does not exist between the internal circuit for the LSI and the chip capacitor 4, the internal circuit is decoupled effectively, and the semiconductor device can be operated stably.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device,
In particular, the present invention relates to a semiconductor device capable of effectively removing a high frequency component of a circuit in a semiconductor chip.

[0002]

2. Description of the Related Art FIG. 4 is a perspective view of a conventional semiconductor device. When manufacturing this semiconductor device, the semiconductor chip 40
2 is placed alone on the semiconductor chip substrate 401 and adhered, and then connected to the bonding terminals 405 of the semiconductor chip substrate 401 with bonding wires 404, and the package is packaged.
Complete as I. In some cases, components are mounted on an LSI substrate.

[0003]

SUMMARY OF THE INVENTION In recent years, LSI amplification and
It is required that the frequency to be processed be dramatically increased, and if it is not realized, it will not have sufficient value as a commercial product. In order to operate an LSI up to a high frequency, it is necessary to effectively remove high-frequency components of an internal circuit of the LSI to lower a high-frequency potential. The lower the high-frequency potential is, the more stable the circuit is, and it is possible to set a high amplification degree and to support high frequencies.

In order to remove high-frequency components from the internal circuit of the semiconductor chip 402, it is conceivable to provide a chip capacitor 403 for removing high-frequency components on the surface of the semiconductor chip substrate 401. With this configuration, the high frequency component of the internal circuit of the semiconductor chip 402 can be removed by the chip capacitor 403.

However, in the LSI having the above configuration, the effect of removing the high-frequency component of the internal circuit is insufficient, so that the operation of the LSI becomes unstable. Hereinafter, the reason will be described using the equivalent circuit of the LSI shown in FIG.

In FIG. 5, by providing a semiconductor chip 402 with a decoupling or filter circuit for circuits from low to high frequencies, it is possible to obtain a high gain amplifying function while making the LSI very stable. However, in order to perform decoupling or filtering of the circuit 408 in the LSI, the chip capacitor 403 mounted on the chip substrate 401 for the purpose of removing the high frequency component of the voltage e1 across the circuit 408 is a pure capacitor. Even if it has the performance of removing the high frequency components as much as possible, between the circuit 408 and the capacitor 403, the following (1) to
The impedance described in (3) is interposed.

(1) Bonding L: L1... Inductive component from semiconductor chip 402 to semiconductor chip substrate 401 (2) Circuit L: L2... Inductive component of circuit from LSI lead terminal 406 to chip capacitor 403 (3) Ground L: L3... Inductive component from the ground lead of the semiconductor chip 402 to the ground terminal of the chip capacitor 403. In FIG. 5, the body substrate ground 409 is LS in FIG.
This is the ground for the board on which I is mounted.

As a result, the voltage e1 across the circuit 408 is expressed by the following equation [1]. e1 = Z1 (L1) i + Z2 (L2) i + Z3 (C) i + Z4 (L3) i [1] Since Z3 is a value that is approximately ignored for the frequency to be removed, e1 is It is represented by the following equation [2]. e1 = Z1 (L1) i + Z2 (L2) i + Z4 (L3) i ... [2]

As can be seen from equation (2), even if the capacitor 403 is mounted for the purpose of removing the voltage of e1, the induction component of the path to the capacitor 403 exists,
Since high-frequency components at both ends of the circuit 408 cannot be removed, LS
The operation of I becomes unstable.

The present invention has been made in view of the above problems, and has as its object to provide a semiconductor device capable of effectively removing high-frequency components from an internal circuit of an LSI.

[0011]

According to the present invention, there is provided a semiconductor device having a semiconductor chip substrate and a semiconductor chip mounted on a surface of the semiconductor chip substrate. A chip capacitor for removing a high-frequency component of the circuit in the semiconductor chip is inserted into the formed through hole and fixed. With this configuration, unnecessary impedance between the semiconductor chip and the chip capacitor can be eliminated, and effective high-frequency component removal can be performed.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS According to a first aspect of the present invention, there is provided a semiconductor device having a semiconductor chip substrate and a semiconductor chip mounted on a surface of the semiconductor chip substrate. A chip capacitor for removing a high-frequency component of the circuit in the semiconductor chip is inserted into the through hole, and the semiconductor device is fixed. It has the effect of being removed.

According to a second aspect of the present invention, in the semiconductor device according to the first aspect, a terminal on the substrate surface side of the chip capacitor and the semiconductor chip are directly connected by a bonding wire. The semiconductor device has a function that a high frequency component of a circuit in a semiconductor chip passes through a bonding wire and is removed by a chip capacitor.

According to a third aspect of the present invention, there is provided the semiconductor device according to the first aspect, wherein the cross-sectional shape of the through-hole is substantially eight-shaped. It has the effect of preventing.

According to a fourth aspect of the present invention, there is provided the semiconductor device according to the first aspect, wherein an earth pattern is formed on the entire back surface of the chip substrate. It has the effect of flowing high frequency components from the chip capacitor to the ground pattern on the entire back side of the chip substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a sectional view of a semiconductor device to which the present invention is applied. Note that the basic structure of the entire semiconductor device is the same as that of the semiconductor device shown in FIG. 4 except for a mounting portion of a chip capacitor, and thus a perspective view is omitted.

As shown in FIG. 1, in a semiconductor device to which the present invention is applied, a semiconductor chip 2 is mounted on a surface of a semiconductor chip substrate 1. A ground pattern 9 is formed on the entire back surface of the semiconductor chip substrate 1, and a ground terminal 7 is provided upright on the right end of the ground pattern 9. A chip capacitor 4 is inserted into a chip capacitor insertion hole 3 which is a through hole formed in the semiconductor chip substrate 1.
The side of the chip capacitor 4 that is exposed on the front side of the semiconductor chip substrate 1 is directly connected to the decoupling circuit of the semiconductor chip 2 by bonding wires 5. The side of the chip capacitor 4 that is exposed on the back side of the semiconductor chip substrate 1 is joined to the ground pattern 9 by solder 6. Semiconductor chip 2
Are connected to ground patterns (not shown) on the surface of the semiconductor chip substrate 1 by ground leads 8. And
This ground pattern is connected to the ground terminal 7 through a through hole or the like (not shown).

The chip capacitor 4 is automatically inserted into the chip capacitor insertion hole 3. At that time, in order to prevent the chip capacitor 4 from dropping by its own weight or the like, the chip capacitor insertion hole 3 is formed in an approximately figure-eight shape as shown in the plan view of FIG. 2, and the chip capacitor 4 is supported at a narrow portion. The position is determined so that the square of the chip capacitor 4 hits the chip insertion hole 3, which corresponds to bonding from the semiconductor chip 2.

Next, the action of removing the high-frequency component of the chip capacitor of the semiconductor device configured as described above will be described with reference to FIG.
This will be described using the equivalent circuit of FIG. From this equivalent circuit, the voltage e2 across the circuit 11 of the semiconductor chip 2 is expressed by the following equation [3]. e2 = Z4 (L4) (3) In this equation, L4 is an induction component (bonding L) from the semiconductor chip 2 to the semiconductor chip substrate 1.

By comparing Equations [2] and [3], it can be seen that 0 <e2 <e1.

The decoupling of the circuit is ideal if it becomes 0 V by the chip capacitor. In the embodiment of the present invention, although it differs depending on the capacitance of the capacitor and the impedance of the circuit, the high frequency performance is remarkably improved as compared with the conventional example.

[0023]

As described above, in the semiconductor device according to the present invention, the chip capacitor for removing the high-frequency component of the circuit in the semiconductor chip is inserted and fixed in the through hole formed in the semiconductor chip substrate. This eliminates unnecessary impedance between the chip and the chip capacitor, and effectively removes high frequency components of a circuit requiring high frequency decoupling.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a semiconductor device to which the present invention is applied.

FIG. 2 is a plan view of a main part of a semiconductor device to which the present invention is applied;

FIG. 3 is an equivalent circuit of a semiconductor device to which the present invention is applied;

FIG. 4 is a perspective view of a conventional semiconductor device;

FIG. 5 is an equivalent circuit of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip board 2 Semiconductor chip 3 Chip capacitor insertion hole 4 Chip capacitor 5 Bonding wire 6, 10 Solder 7 Ground terminal 8 Ground lead 9 Ground pattern

Continuing from the front page (72) Inventor Kanaya Kasai 4-3-1 Tsunashima Higashi, Kohoku-ku, Yokohama-shi, Kanagawa Prefecture Inside Matsushita Communication Industrial Co., Ltd. (72) Inventor Tadao Kawamata 4-3-1 Tsunashima Higashi, Kohoku-ku, Yokohama-shi, Kanagawa Prefecture No. 1 Matsushita Communication Industrial Co., Ltd. (72) Inventor Hiroshi Sugawara 4-3-1 Tsunashima Higashi, Kohoku-ku, Yokohama, Kanagawa Prefecture Inside Matsushita Communication Industrial Co., Ltd. (72) Inventor Tamotsu Kaneko Tsunashima, Kohoku-ku, Yokohama, Kanagawa Prefecture Matsushita Communication Industrial Co., Ltd.

Claims (4)

[Claims] 1. A semiconductor device comprising a semiconductor chip substrate and a semiconductor chip mounted on a surface of the semiconductor chip substrate, wherein a through-hole formed in the semiconductor chip substrate has a through hole for removing a high-frequency component of a circuit in the semiconductor chip. Wherein the chip capacitor is inserted and fixed. 2. The semiconductor device according to claim 1, wherein a terminal on the substrate surface side of the chip capacitor and the semiconductor chip are directly connected by a bonding wire. 3. The semiconductor device according to claim 1, wherein the cross-sectional shape of said through hole is substantially a figure eight. 4. The semiconductor device according to claim 1, wherein a ground pattern is formed on the entire back surface of said chip substrate.