JP2001024032A - Mounting method and mounting apparatus of ic chip for non-contact ic card - Google Patents
Mounting method and mounting apparatus of ic chip for non-contact ic cardInfo
- Publication number
- JP2001024032A JP2001024032A JP19160599A JP19160599A JP2001024032A JP 2001024032 A JP2001024032 A JP 2001024032A JP 19160599 A JP19160599 A JP 19160599A JP 19160599 A JP19160599 A JP 19160599A JP 2001024032 A JP2001024032 A JP 2001024032A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- mounting
- acf
- heater head
- teflon tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板上へのＩＣチ
ップの実装に関するものであり、特に、非接触ＩＣカー
ド用フィルム基板上に、異方性導電膜のような加熱と加
圧によりＩＣチップと基板とを接続・接着させる材料を
用いて、フリップチップ実装によりＩＣチップを実装す
る実装方法及びその実装装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the mounting of an IC chip on a substrate, and more particularly, to the mounting of an IC chip on a film substrate for a non-contact IC card by heating and pressing such as an anisotropic conductive film. The present invention relates to a mounting method for mounting an IC chip by flip-chip mounting using a material for connecting and bonding a chip and a substrate, and a mounting apparatus therefor.
【０００２】[0002]
【従来の技術】従来より、キャッシュカード、ＩＤカー
ド等重要かつ大量なデータを記憶、処理する目的でＩＣ
チップを搭載したＩＣカードが普及している。近年で
は、ＩＣカードの外部端子と外部端末を接続して使用す
る接触式のＩＣカードだけでなく、アンテナを内蔵し、
電波や静電結合により非接触で外部機器との間でデータ
交換を行う非接触式のＩＣカードの使用が増加し、カー
ドの出し入れの不要、外部端末のメンテナンスの軽減等
の理由から、需要が高まっている。2. Description of the Related Art Conventionally, ICs have been used for storing and processing important and large amounts of data such as cash cards and ID cards.
IC cards equipped with chips have become widespread. In recent years, not only contact-type IC cards that connect and use external terminals of IC cards and external terminals, but also have built-in antennas,
The use of non-contact type IC cards, which exchange data with external devices in a non-contact manner by radio waves or electrostatic coupling, is increasing, and there is no need to insert and remove the card and reduce the maintenance of external terminals. Is growing.
【０００３】非接触ＩＣカードでは、限られたカードの
厚み制限の中に、ＩＣチップが実装された基板を収納し
なければならず、また、コストダウンの点からＰＥＴや
ポリイミド等のフィルム上にエッチングや印刷によって
銅、アルミ、銀ペースト等の回路パターンが形成された
フィルム基板が用いられている。ＩＣチップの表面が、
基板側を向いて実装される方法はフリップチップ実装方
法と呼ばれ、例えば、図２のようにＩＣチップ（３）と
回路パターン（８）とを異方性導電膜（５）（Ａｎｉｓ
ｏｔｒｏｐｉｃＣｏｎｄｕｃｔｉｖｅＦｉｌｍ：以下Ａ
ＣＦ）によって実装する方法である。[0003] In a non-contact IC card, a substrate on which an IC chip is mounted must be accommodated within the limited thickness of the card, and on a film such as PET or polyimide from the viewpoint of cost reduction. A film substrate on which a circuit pattern of copper, aluminum, silver paste, or the like is formed by etching or printing is used. The surface of the IC chip
The method of mounting the substrate facing the substrate side is called a flip chip mounting method. For example, as shown in FIG. 2, an IC chip (3) and a circuit pattern (8) are connected to an anisotropic conductive film (5) (Anis).
otropicConductiveFilm: A
CF).
【０００４】図２は、実装装置にて、ＩＣチップが実装
される状態を示す説明図である。非接触ＩＣカード用の
フィルム基板（７）、異方性導電膜（ＡＣＦ）（５）、
ＩＣチップ（３）は実装装置のベース（９）上に置か
れ、ヒータヘッド（１）により加熱と加圧されるように
なっている。FIG. 2 is an explanatory diagram showing a state in which an IC chip is mounted on a mounting apparatus. A film substrate for a non-contact IC card (7), an anisotropic conductive film (ACF) (5),
The IC chip (3) is placed on the base (9) of the mounting device, and is heated and pressed by the heater head (1).
【０００５】非接触ＩＣカード用のフィルム基板（７）
上に、ＡＣＦ（５）を用いてフリップチップ実装方法に
よってＩＣチップを実装する方法は、先ず、ＰＥＴやポ
リイミド等のフィルム上にエッチングや印刷によって
銅、アルミ、銀ペースト等の回路パターン（８）を形成
したフィルム基板（７）のＩＣチップを実装する位置
に、ＡＣＦ（５）が仮貼りされる。この際、ＡＣＦは通
常リール状態で供給されるので、仮貼りと同時に接着面
を保護しているセパレータも剥離される。Film substrate for contactless IC card (7)
A method of mounting an IC chip by a flip chip mounting method using an ACF (5) is as follows. First, a circuit pattern of copper, aluminum, silver paste or the like is etched or printed on a film such as PET or polyimide (8). The ACF (5) is temporarily attached to the position on the film substrate (7) on which the IC chip is to be mounted on which the IC chip is formed. At this time, since the ACF is usually supplied in a reel state, the separator protecting the bonding surface is also peeled off at the same time as the temporary attachment.
【０００６】次に、フィルム基板（７）にＡＣＦ（５）
が仮貼りされた状態で、ＩＣチップ仮置き工程へと移
り、ＡＣＦ（５）上にＩＣチップ（３）が仮置きされ
る。続いて、ＩＣチップが仮置きされたフィルム基板
は、図２に示すＩＣチップ本圧着工程へと移され、実装
装置のベース（９）上に固定され、ＩＣチップ（３）の
裏面側から、実装装置のヒータヘッド（１）による加熱
と加圧によりＩＣチップ（３）の表面側のＡＣＦ（５）
に熱と圧力が加えられ、ＩＣチップ（３）が本圧着され
る。 ＩＣチップを実装装置のヒータヘッド側で吸着し
ながら圧着する場合もあるのでＩＣチップ仮置き工程と
ＩＣチップ本圧着工程とを同時に行う場合もある。Next, an ACF (5) is formed on the film substrate (7).
In the state where is temporarily attached, the process proceeds to an IC chip temporary placing step, and the IC chip (3) is temporarily placed on the ACF (5). Subsequently, the film substrate on which the IC chip is temporarily placed is transferred to the IC chip final bonding step shown in FIG. 2, and is fixed on the base (9) of the mounting apparatus, and from the back side of the IC chip (3), ACF (5) on the front side of IC chip (3) by heating and pressing by heater head (1) of mounting device
Is applied with heat and pressure, and the IC chip (3) is fully bonded. In some cases, the IC chip is pressure-bonded while being adsorbed on the heater head side of the mounting apparatus, so that the IC chip temporary placing step and the IC chip main pressure bonding step may be performed simultaneously.
【０００７】ＡＣＦは、ニッケル、金属コートされたプ
ラスチック等の導電粒子（６）をエポキシ系樹脂等の接
着剤中に分散した接着材料であり、加熱により接着剤が
溶け、加圧により導電粒子（６）がＩＣチップのバンプ
（４）及びフィルム基板（７）上の配線パターン（８）
と接触し、バンプと配線パターンが接続され、そのまま
硬化する。そして、このバンプと配線パターン以外の部
分では、粒子は単独で存在するので絶縁性が得られてい
る。ＡＣＦはＩＣチップと基板の間を封止する役割もあ
るため、製作工程を減らすことができることから広く利
用されている方法である。ACF is an adhesive material in which conductive particles (6) such as plastic coated with nickel or metal are dispersed in an adhesive such as an epoxy resin. The adhesive is melted by heating, and the conductive particles (6) are pressed by pressure. 6) The wiring pattern (8) on the bump (4) of the IC chip and the film substrate (7)
, And the bump and the wiring pattern are connected and cured as it is. Then, in the portion other than the bump and the wiring pattern, the particles exist alone, so that the insulating property is obtained. The ACF is also widely used because it also has a role of sealing between the IC chip and the substrate, so that the number of manufacturing steps can be reduced.
【０００８】しかし、このような方法において、ＩＣチ
ップの表面側のＡＣＦ（５）が熱により溶け、また圧力
を加える事によってＩＣチップ（３）の側面を伝わり上
方向へと流れ、実装装置のヒータヘッド（１）がＡＣＦ
によって汚れてしまうことがある。ヒータヘッド（１）
がＡＣＦによって汚れはじめると、連続してＩＣチップ
を実装した場合に、ＩＣチップの裏面上にＡＣＦが付着
し、特に、フィルム基板（７）を強く固定していない場
合においては、実装装置のヒータヘッド側に、実装済み
のＩＣチップとフィルム基板が接着してしまうという問
題が発生する。However, in such a method, the ACF (5) on the front surface side of the IC chip is melted by heat, and flows upward along the side surface of the IC chip (3) by applying pressure, and the ACF (5) is mounted on the mounting device. Heater head (1) is ACF
Can get dirty. Heater head (1)
When the IC starts to be stained by the ACF, the ACF adheres to the back surface of the IC chip when the IC chip is continuously mounted, and particularly when the film substrate (7) is not firmly fixed, the heater of the mounting apparatus is used. There is a problem that the mounted IC chip and the film substrate adhere to the head side.
【０００９】また、ＩＣチップの裏面側にＡＣＦが付着
すると、ＩＣチップとフィルム基板の高さの精度が保た
れないという問題があった。更に、非接触ＩＣカード用
のフィルム基板は、ＰＥＴやポリイミド等のフィルム
と、エッチングや印刷によって形成された銅、アルミ、
銀ペースト等の回路パターンとの層間でコンデンサを形
成しているが、コンデンサ容量を大きくするために、そ
のフィルム部分は薄く、従って、ＩＣチップの表面側か
ら加わった熱が実装装置のベースに放熱され、ＡＣＦの
温度上昇が十分にされないことになり、ＡＣＦが十分に
硬化されず接着強度を得る事ができないといった問題が
あった。Further, when the ACF adheres to the back surface of the IC chip, there is a problem that the accuracy of the height of the IC chip and the film substrate cannot be maintained. Further, a film substrate for a non-contact IC card is made of a film such as PET or polyimide, and copper or aluminum formed by etching or printing.
Capacitors are formed between layers of silver paste and other circuit patterns. However, the film is thin to increase the capacitance of the capacitor. Therefore, heat applied from the front side of the IC chip is radiated to the base of the mounting device. As a result, the temperature of the ACF is not sufficiently increased, and the ACF is not sufficiently cured, so that there is a problem that the adhesive strength cannot be obtained.
【００１０】[0010]
【発明が解決しようとする課題】本発明は、上記の問題
点を解決するためになされたものであり、加熱と加圧に
よりＩＣチップと基板とを接続・接着させる材料を用い
て、ＩＣチップをフリップチップ実装により非接触ＩＣ
カード用のフィルム基板上に実装する際に、その実装工
程においては、実装装置のヒータヘッドがＡＣＦによっ
て汚れてしまうことなく、また、実装されたＩＣチップ
とフィルム基板においては、ＩＣチップとフィルム基板
の高さの精度が保たれ、且つ、ＡＣＦが十分に硬化され
十分な接着強度が得られる非接触ＩＣカード用ＩＣチッ
プ実装方法を提供することを課題とするものである。ま
た、その実装装置を提供することを課題とするものであ
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an IC chip using a material for connecting and bonding an IC chip and a substrate by heating and pressing is provided. Non-contact IC by flip chip mounting
When mounting on a card film substrate, in the mounting process, the heater head of the mounting device is not contaminated by the ACF, and the mounted IC chip and the film substrate are not covered by the IC chip and the film substrate. It is an object of the present invention to provide an IC chip mounting method for a non-contact IC card in which the accuracy of the height is maintained and the ACF is sufficiently cured to obtain sufficient adhesive strength. It is another object of the present invention to provide a mounting device.
【００１１】[0011]
【課題を解決するための手段】本発明は、加熱と加圧に
よりＩＣチップと基板とを接続・接着させる材料を用い
て、ＩＣチップをフリップチップ実装により非接触ＩＣ
カード用のフィルム基板上に実装する方法であって、実
装装置のヒータヘッドと、該ＩＣチップとの間に、テフ
ロンテープを挟み加熱と加圧する事を特徴とする非接触
ＩＣカード用ＩＣチップ実装方法である。SUMMARY OF THE INVENTION The present invention provides a non-contact IC by flip-chip mounting an IC chip using a material for connecting and bonding an IC chip and a substrate by heating and pressing.
A method for mounting on a film substrate for a card, wherein a Teflon tape is interposed between a heater head of the mounting apparatus and the IC chip, and heating and pressing are performed, wherein the IC chip for a non-contact IC card is mounted. Is the way.
【００１２】また、本発明は、上記発明による非接触Ｉ
Ｃカード用ＩＣチップ実装方法において、前記テフロン
テープの厚みが、２０μｍ〜１００μｍの範囲のテフロ
ンテープを用いることを特徴とする非接触ＩＣカード用
ＩＣチップ実装方法である。Further, the present invention provides a non-contact I
The method for mounting an IC chip for a C card, wherein the Teflon tape has a thickness of 20 μm to 100 μm using a Teflon tape.
【００１３】また、本発明は、上記発明による非接触Ｉ
Ｃカード用ＩＣチップ実装方法において、前記実装装置
のベース材料として、セラミックを用いた実装装置で実
装することを特徴とする非接触ＩＣカード用ＩＣチップ
実装方法である。[0013] The present invention also provides a non-contact I according to the above invention.
An IC chip mounting method for a non-contact IC card, wherein the mounting method uses a ceramic mounting device as a base material of the mounting device.
【００１４】また、本発明は、加熱と加圧によりＩＣチ
ップをフリップチップ実装する非接触ＩＣカード用ＩＣ
チップ実装装置において、テフロンテープ供給機構と、
セラミックのベースを具備した事を特徴とする非接触Ｉ
Ｃカード用ＩＣチップ実装装置である。The present invention also provides a non-contact IC card IC in which an IC chip is flip-chip mounted by heating and pressing.
In the chip mounting device, a Teflon tape supply mechanism,
Non-contact I characterized by having a ceramic base
This is an IC chip mounting device for a C card.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施の形態を説明
する。図１は、本発明による非接触ＩＣカード用ＩＣチ
ップの実装装置の主要部分、及び非接触ＩＣカード用Ｉ
Ｃチップ実装方法の一実施例を示す説明図である。図１
において、非接触ＩＣカード用ＩＣチップの実装装置の
主要部分は、セラミックのベース（１９）、加熱と加圧
するヒータヘッド（１１）、及びテフロンテープ供給機
構（２２）などで構成されている。この実装装置は、Ｉ
Ｃチップを本圧着する装置である。Embodiments of the present invention will be described below. FIG. 1 shows a main part of an apparatus for mounting an IC chip for a non-contact IC card according to the present invention, and an IC chip for a non-contact IC card.
FIG. 4 is an explanatory diagram showing one embodiment of a C-chip mounting method. FIG.
The main parts of the device for mounting an IC chip for a non-contact IC card include a ceramic base (19), a heater head (11) for heating and pressurizing, and a Teflon tape supply mechanism (22). This mounting device is
This is a device for fully pressing the C chip.
【００１６】また、図１においては、回路パターン
（８）が形成されたフィルム基板（７）上に、ＡＣＦ
（５）が仮貼りされ、更に、回路パターン（８）にＩＣ
チップ（３）のバンプ（４）が位置するようにＩＣチッ
プ（３）が仮置きされたものである。そして、これらは
加熱と加圧するヒータヘッド（１１）の下方の、セラミ
ックのベース（１９）上に載置されている。また、実装
装置のヒータヘッド（１１）とＩＣチップ（３）との間
にはテフロンテープ供給機構（２２）からのテフロンテ
ープ（２）が挟まれている。In FIG. 1, an ACF is placed on a film substrate (7) on which a circuit pattern (8) is formed.
(5) is temporarily attached, and further, an IC is added to the circuit pattern (8).
The IC chip (3) is temporarily placed so that the bumps (4) of the chip (3) are located. These are mounted on a ceramic base (19) below the heating and pressurizing heater head (11). A Teflon tape (2) from a Teflon tape supply mechanism (22) is sandwiched between the heater head (11) of the mounting apparatus and the IC chip (3).
【００１７】ＡＣＦは、通常用いられているエポキシ系
樹脂等の接着剤中に、ニッケル、金属コートされたプラ
スチック等の導電粒子（６）を分散したもので、導電粒
子の径の大きさ、形状、ＡＣＦの厚み等はＩＣチップの
仕様等により選択される。図１に示すＡＣＦ（５）はフ
ィルム状であるが、液状の異方性導電ペースト（Ａｎｉ
ｓｏｔｒｏｐｉｃ Ｃｏｎｄｕｃｔｉｖｅ Ｐａｓｔ
ｅ：以下ＡＣＰ）や、ＩＣチップのバンプとフィルム基
板の回路パターンが直接接合されることができれば、導
電粒子を含まない液状のアンダーフィル剤等の接着材料
を用いる事もできる。The ACF is obtained by dispersing conductive particles (6) such as nickel or metal-coated plastic in an adhesive such as a commonly used epoxy resin. , ACF thickness and the like are selected according to the specifications of the IC chip. The ACF (5) shown in FIG. 1 is in the form of a film, but is a liquid anisotropic conductive paste (Ani).
sotropic Conductive Past
e: ACP), or an adhesive material such as a liquid underfill agent containing no conductive particles can be used as long as the bump of the IC chip and the circuit pattern of the film substrate can be directly joined.
【００１８】前工程であるＡＣＦの仮貼りにて、ＡＣＦ
は通常リール状態で供給されるので、仮貼りと同時に接
着面を保護しているセパレータも剥離される。ＡＣＰ等
の液状の接着材料を用いる場合は、所定の形状の孔を有
する印刷用金属板の上面に接着剤を滴下し、接着剤をス
クイージにより前記孔に流し込み印刷する事により塗布
するスクリーン印刷法を用いたり、或いは、空気圧作動
方式の液体塗布装置であるディスペンサーを用いて塗布
する方法を用いることができる。In the pre-attachment of the ACF in the previous process, the ACF
Is usually supplied in a reel state, so that the separator protecting the adhesive surface is peeled off simultaneously with the temporary attachment. When using a liquid adhesive material such as ACP, a screen printing method is used in which an adhesive is dropped on the upper surface of a printing metal plate having holes of a predetermined shape, and the adhesive is applied by pouring into the holes with a squeegee and printing. Or a method of applying using a dispenser, which is a pneumatically operated liquid application device.
【００１９】ＩＣチップはカードの基材中に収納される
事から、平面状のシリコンからなるウェハーをカットし
た厚み１００μｍから３００μｍ程度のＩＣチップにバ
ンプが形成されているものを用いる。Since the IC chip is stored in the base material of the card, an IC chip having a thickness of about 100 μm to 300 μm obtained by cutting a planar silicon wafer and having bumps formed thereon is used.
【００２０】ＩＣチップが仮置きされたフィルム基板
は、図１に示すように、実装装置のベース（１９）上に
固定され、ＩＣチップ（３）の裏面側から、テフロンテ
ープ（２）を介して、ヒータヘッド（１１）によって加
熱と加圧によりＩＣチップ（３）の表面側のＡＣＦ
（５）に熱と圧力が加えられ、フィルム基板（７）上の
回路パターン（８）と、ＩＣチップ（３）上のバンプ
（４）が導電粒子（６）を介して接続され、且つ接着さ
れＩＣチップ（３）が実装される。As shown in FIG. 1, the film substrate on which the IC chip is temporarily placed is fixed on the base (19) of the mounting device, and is interposed from the back side of the IC chip (3) via the Teflon tape (2). The ACF on the surface side of the IC chip (3) is heated and pressed by the heater head (11).
Heat and pressure are applied to (5), and the circuit pattern (8) on the film substrate (7) and the bumps (4) on the IC chip (3) are connected via conductive particles (6) and adhered. Then, an IC chip (3) is mounted.
【００２１】実装装置のヒータヘッド（１１）の材料と
しては、通常用いられている金属等の熱伝導率の良い材
料を用いることができ、ＩＣチップへの加熱方法及び設
定温度はＡＣＦ等の性質、生産時のタクトタイムによっ
て任意に選択される。特に、加熱方法においては、ヒー
タヘッド（１１）が一定の温度を保持したままテフロン
テープを介してＩＣチップに熱を加えるコンスタントヒ
ート、或いは、テフロンテープを介してヒータヘッドが
ＩＣチップに接してから温度を上昇させるパルスヒート
で行うことができる。ヒータヘッドの大きさは通常実装
するＩＣチップより少し大きいくらいであるが、熱容量
を持たせるために大きめのヒータヘッドを用いることも
ある。As a material of the heater head (11) of the mounting apparatus, a material having a good thermal conductivity such as a commonly used metal can be used, and the method of heating the IC chip and the set temperature are determined by properties such as ACF. , Can be arbitrarily selected according to the tact time at the time of production. In particular, in the heating method, constant heat is applied to the IC chip via the Teflon tape while the heater head (11) maintains a constant temperature, or after the heater head contacts the IC chip via the Teflon tape. It can be performed by pulse heating that raises the temperature. Although the size of the heater head is slightly larger than the IC chip to be usually mounted, a larger heater head may be used in order to have heat capacity.
【００２２】テフロンテープ（２）としては、厚み２０
μｍ〜１００μｍのテープを用いる事が好ましい。これ
は、テフロンテープを使用しない場合、熱を加える側で
あるヒータヘッド側のＡ点（Ａ）と、熱を加えられる側
であるＩＣチップの表面側中央部Ｂ点（Ｂ）とでは設定
温度により、数十度の温度差があるが、テフロンテープ
を挟む事によって、更に数十度の温度差が生じるからで
ある。The Teflon tape (2) has a thickness of 20
It is preferable to use a tape of μm to 100 μm. This is because when the Teflon tape is not used, the set temperature is set at the point A (A) on the heater head side to which heat is applied and at the point B (B) on the front surface side of the IC chip which is the side to which heat is applied. This causes a temperature difference of several tens of degrees, but the temperature difference of several tens of degrees is generated by sandwiching the Teflon tape.
【００２３】すなわち、テフロンテープの厚みが１００
μｍ以上であると、ヒータヘッドから加えられた熱が、
テフロンテープによって遮断され、ＩＣチップの表面側
の温度が低い状態となり、ＡＣＦが十分硬化せず接着強
度を得る事ができない傾向になる。また、テフロンテー
プの厚みが２０μｍ以下の薄いテフロンテープにする
と、熱によるテフロンテープのたわみが大きくなり、テ
フロンテープをリール状態で供給する際に、その巻き取
り、搬送に支障をきたす等の問題が生じる。That is, the thickness of the Teflon tape is 100
If it is more than μm, the heat applied from the heater head will
Blocked by the Teflon tape, the temperature on the surface side of the IC chip becomes low, and the ACF is not sufficiently cured, so that the adhesive strength tends not to be obtained. Also, if the thickness of the Teflon tape is made as thin as 20 μm or less, the deflection of the Teflon tape due to heat becomes large, and when the Teflon tape is supplied in a reel state, there is a problem that the winding and the conveyance are hindered. Occurs.
【００２４】ヒータヘッドから加えられＩＣチップに届
いた熱は、ベースへと放熱されるが、ＩＣチップの表面
側中央部Ｂ点（Ｂ）とＩＣチップの表面側周辺部Ｃ点
（Ｃ）では温度差が生じ、特に、実装装置のベースの材
料が金属であると、この差が顕著になる。つまり、ＩＣ
チップの表面側の周辺部では温度が上がらずＡＣＦが十
分に硬化せず、十分な接着強度を得る事ができなくな
る。ベース（１９）の材料がセラミックであると、この
ようなＩＣチップの表面側中央部Ｂ点（Ｂ）とＩＣチッ
プの表面側周辺部Ｃ点（Ｃ）では温度差が減少し、ＩＣ
チップの表面側の周辺部でも温度が上がりＡＣＦが十分
に硬化し、十分な接着強度を得る事ができる。The heat applied from the heater head and arriving at the IC chip is radiated to the base, but at the center B (B) on the front side of the IC chip and at the point C (C) on the front side of the IC chip. A temperature difference occurs, particularly when the material of the base of the mounting device is a metal. That is, IC
At the peripheral portion on the front surface side of the chip, the temperature does not rise and the ACF is not sufficiently cured, so that sufficient adhesive strength cannot be obtained. If the material of the base (19) is ceramic, the temperature difference between the central point B (B) on the front side of the IC chip and the point C (C) on the peripheral side on the front side of the IC chip decreases, and the IC
The temperature rises also in the peripheral portion on the front surface side of the chip, the ACF is sufficiently cured, and sufficient adhesive strength can be obtained.
【００２５】[0025]
【実施例】以下、実施例により本発明を詳細に説明す
る。 ＜実施例１＞ （ＩＣチップの実装）厚み２５μｍのポリイミドのフィ
ルム上に、エッチングによって銅の回路パターンを形成
したフィルム基板のＩＣチップを実装する位置に、ＩＣ
チップの表面側中央部での温度が８５℃、時間１ｓｅ
ｃ、荷重１Ｋｇｆの条件でＡＣＦを仮貼りした。The present invention will be described below in detail with reference to examples. <Example 1> (Mounting of IC chip) An IC chip was mounted on a film substrate having a copper circuit pattern formed by etching on a polyimide film having a thickness of 25 μm.
The temperature at the center of the front side of the chip is 85 ° C for 1 sec.
c, ACF was temporarily attached under the conditions of a load of 1 kgf.
【００２６】ＡＣＦは、エポキシ系樹脂の接着剤中に金
属コートされたプラスチックの球状の導電粒子を分散し
たもので、厚み３０μｍのものを用いた。仮貼りと同時
に接着面を保護しているセパレータも剥離した。フィル
ム基板にＡＣＦが仮貼りされた状態で、ＩＣチップ仮置
き工程へと移し、ＡＣＦ上にＩＣチップを仮置きした。
ＩＣチップは平面状のシリコンからなるウェハーをカッ
トした大きさ縦５ｍｍ×横５ｍｍ、厚さ２６０μｍ、バ
ンプ数３個のものを用いた。The ACF is obtained by dispersing spherical conductive particles of a metal-coated plastic in an epoxy resin adhesive and has a thickness of 30 μm. At the same time as the temporary attachment, the separator protecting the adhesive surface was also peeled off. With the ACF temporarily attached to the film substrate, the process was moved to an IC chip temporary placement step, and the IC chip was temporarily placed on the ACF.
The IC chip used had a size of 5 mm × 5 mm, a thickness of 260 μm, and three bumps obtained by cutting a flat silicon wafer.
【００２７】ＩＣチップが仮置きされたフィルム基板を
ＩＣチップ本圧着工程へと移し、実装装置のベース上に
固定し、ＩＣチップの裏面側から、テフロンテープを介
して、ヒータヘッドによって加熱と加圧によりＩＣチッ
プの表面側のＡＣＦに熱と圧力を加えＩＣチップを実装
した。The film substrate on which the IC chip is temporarily placed is transferred to the IC chip final pressure bonding step, and is fixed on the base of the mounting device. Heating and heating are performed from the back side of the IC chip by a heater head via a Teflon tape. Heat and pressure were applied to the ACF on the front side of the IC chip by pressure to mount the IC chip.
【００２８】実装装置のヒータヘッドにおけるＩＣチッ
プへの加熱方法は、テフロンテープを介してヒータヘッ
ドがＩＣチップに接してから温度を上昇させるパルスヒ
ートで行い、設定温度まで温度が上昇するのに２秒、Ｉ
Ｃチップの表面側中央部での温度が２００℃となる設定
温度、上昇時間を含まない実装時間２０ｓｅｃ、荷重
１．３Ｋｇｆの条件で圧着した。ヒータヘッドの先端の
大きさは実装するＩＣチップより少し大きめの縦７ｍｍ
×横７ｍｍの大きさのものを用いた。The method of heating the IC chip in the heater head of the mounting apparatus is performed by pulse heating that raises the temperature after the heater head comes into contact with the IC chip via the Teflon tape. Seconds, I
The C chip was crimped under the conditions of a set temperature at which the temperature at the center of the front surface side was 200 ° C., a mounting time not including the rising time of 20 sec, and a load of 1.3 kgf. The size of the tip of the heater head is 7mm long, slightly larger than the IC chip to be mounted.
× A 7 mm wide one was used.
【００２９】テフロンテープは、厚み２０μｍ、及び１
００μｍのテープを用いた。フィルム基板の受け台であ
る実装装置のベースはセラミックのベース、及び金属の
ベースを用いた。The Teflon tape has a thickness of 20 μm and a thickness of 1 μm.
A 00 μm tape was used. A ceramic base and a metal base were used as the base of the mounting device, which is a receiving base for the film substrate.
【００３０】（剥離試験）実装したサンプルについて、
ＩＣチップの表面側とフィルム基板の接着強度を調べる
為に剥離試験を行った。試験はＪＩＳ−Ｃ６４８１を参
考にして、ＩＣチップを搭載したフィルム基板のＩＣチ
ップの裏面側にガラス板を張りつけ、フィルム基板を９
０度方向に剥離した。試験速度は５０ｍｍ／ｍｉｎで行
った。(Peeling Test) For the mounted sample,
A peel test was performed to examine the adhesive strength between the surface of the IC chip and the film substrate. In the test, referring to JIS-C6481, a glass plate was attached to the back side of the IC chip of the film substrate on which the IC chip was mounted, and the film substrate was 9
Peeled in the 0 degree direction. The test speed was 50 mm / min.
【００３１】まず、実装装置のヒータヘッドとＩＣチッ
プの間には何も挟まない従来の実装方法で、フィルム基
板の受け台である実装装置のベースは金属のベースを用
いて実装したサンプルについて、サンプル数ｎ＝２０で
剥離試験を行った。接着強度を表す、剥離試験機の平均
剥離荷重は２００ｇｆであった。また、実装装置のヒー
タヘッドとＩＣチップの間には何も挟まず、実装はサン
プル数２０回分を連続で行ったので、実装後のＩＣチッ
プの裏面側にＡＣＦによる汚れが見られた。First, in a conventional mounting method in which nothing is sandwiched between the heater head of the mounting apparatus and the IC chip, the mounting apparatus, which is a cradle for the film substrate, is mounted using a metal base. The peel test was performed with the number of samples n = 20. The average peeling load of the peeling tester, which indicates the adhesive strength, was 200 gf. In addition, since nothing was sandwiched between the heater head of the mounting apparatus and the IC chip, and mounting was performed continuously for 20 samples, the back surface of the mounted IC chip was stained by ACF.
【００３２】次に、実装装置のヒータヘッドとＩＣチッ
プの間に１００μｍのテフロンテープを挟み、フィルム
基板の受け台である実装装置のベースは金属のベースを
用いて実装したサンプルについて、同じくサンプル数ｎ
＝２０で剥離試験を行った。接着強度を表す、剥離試験
機の平均剥離荷重は１５０ｇｆとなり、テフロンテープ
による熱の遮断によるＡＣＦの未硬化が確認された。Next, a 100 μm Teflon tape was interposed between the heater head and the IC chip of the mounting apparatus, and the mounting apparatus base serving as a cradle for the film substrate was mounted using a metal base. n
= 20, a peel test was performed. The average peeling load of the peeling tester, which indicates the adhesive strength, was 150 gf, and it was confirmed that the ACF was uncured due to the interruption of heat by the Teflon tape.
【００３３】次に、実装装置のヒータヘッドとＩＣチッ
プの間に２０μｍのテフロンテープを挟み、フィルム基
板の受け台である実装装置のベースは金属のベースを用
いて実装したサンプルについて、同じくサンプル数ｎ＝
２０で剥離試験を行った。接着強度を表す、剥離試験機
の平均剥離荷重は１８０ｇｆとなり、テフロンテープの
厚みを薄くする事によってテフロンテープによる熱の遮
断を防ぐことが確認された。Next, a 20 μm Teflon tape was sandwiched between the heater head of the mounting apparatus and the IC chip, and the mounting apparatus base serving as a cradle for the film substrate was mounted using a metal base. n =
At 20 the peel test was performed. The average peeling load of the peeling tester, which indicates the adhesive strength, was 180 gf, and it was confirmed that the heat blocking by the Teflon tape was prevented by reducing the thickness of the Teflon tape.
【００３４】最後に、実装装置のヒータヘッドとＩＣチ
ップの間に１００μｍ、及び２０μｍのテフロンテープ
を挟み、フィルム基板の受け台である実装装置のベース
はセラミックのベースを用いて実装したサンプルについ
て、同じくサンプル数ｎ＝２０で剥離試験を行った。接
着強度を表す、剥離試験機の平均剥離荷重はテフロンテ
ープの厚み１００μｍの時で２５０ｇ、２０μｍの時で
３００ｇｆとなり、テフロンテープの厚みを薄くする事
によってテフロンテープによる熱の遮断を防ぐことが再
確認されるとともに、実装装置のベース材料を変える事
によって接着強度が大幅に増す事が確認された。また、
前記のテフロンテープを用いたすべての実験に関して、
実装装置のヒータヘッド側ならびにＩＣチップの裏面側
にＡＣＦによる汚れは全く無かった。Finally, a sample in which a Teflon tape of 100 μm and 20 μm is sandwiched between the heater head of the mounting apparatus and the IC chip, and the base of the mounting apparatus which is a receiving base of the film substrate is mounted using a ceramic base, Similarly, a peeling test was performed with the number of samples n = 20. The average peeling load of the peeling tester, which indicates the adhesive strength, is 250 g when the Teflon tape thickness is 100 μm and 300 gf when the Teflon tape thickness is 20 μm. It was confirmed that the bonding strength was greatly increased by changing the base material of the mounting apparatus. Also,
For all experiments using the Teflon tape described above,
There was no ACF contamination on the heater head side of the mounting apparatus and on the back side of the IC chip.
【００３５】よって、本発明による実装方法によると、
実装装置のヒータヘッドとＩＣチップの裏面側の間に何
も挟まない実装方法に比べ、実装装置のヒータヘッド側
ならびにＩＣチップの裏面側に生じるＡＣＦによる汚れ
を防止できるだけでなく、汚れ防止に用いるＡＣＦの厚
みを薄くすることによってＡＣＦによる熱の遮断を防ぐ
事ができる。また、実装装置のベースがセラミックであ
るので、実装装置のベースへの放熱が少なく、ヒータヘ
ッドから加えられた熱がＩＣチップの表面側の周辺部に
も十分届き、ＡＣＦが十分に硬化するのでＩＣチップと
フィルム基板の接着において十分な接着強度を得る事が
できた。Therefore, according to the mounting method of the present invention,
Compared to a mounting method in which nothing is sandwiched between the heater head of the mounting apparatus and the back side of the IC chip, not only can the ACF generated on the heater head side of the mounting apparatus and the back side of the IC chip be prevented, but also used to prevent contamination. By reducing the thickness of the ACF, heat interruption by the ACF can be prevented. In addition, since the base of the mounting device is made of ceramic, there is little heat radiation to the base of the mounting device, and the heat applied from the heater head reaches the peripheral portion on the front side of the IC chip sufficiently, and the ACF is sufficiently hardened. Sufficient adhesive strength was obtained in bonding the IC chip and the film substrate.
【００３６】[0036]
【発明の効果】本発明は、加熱と加圧によりＩＣチップ
と基板とを接続・接着させる材料を用いて、ＩＣチップ
をフリップチップ実装により非接触ＩＣカード用のフィ
ルム基板上に実装する際に、実装装置のヒータヘッド
と、ＩＣチップとの間に、テフロンテープを挟み加熱と
加圧するので、その実装工程においては、実装装置のヒ
ータヘッドがＡＣＦによって汚れてしまうことなく、ま
た、実装されたＩＣチップとフィルム基板においては、
ＩＣチップとフィルム基板の高さの精度が保たれ、且
つ、ＡＣＦが十分に硬化され十分な接着強度が得られる
非接触ＩＣカード用ＩＣチップ実装方法となる。The present invention relates to a method for mounting an IC chip on a film substrate for a non-contact IC card by flip chip mounting using a material for connecting and bonding the IC chip and the substrate by heating and pressing. Since the Teflon tape is interposed between the heater head of the mounting apparatus and the IC chip and heated and pressed, in the mounting process, the heater head of the mounting apparatus is not contaminated by the ACF and is mounted. For IC chips and film substrates,
A method of mounting an IC chip for a non-contact IC card in which the accuracy of the height of the IC chip and the film substrate is maintained and the ACF is sufficiently cured and sufficient adhesive strength is obtained.
【００３７】また、本発明は、上記非接触ＩＣカード用
ＩＣチップ実装方法において、前記テフロンテープの厚
みが、２０μｍ〜１００μｍの範囲のテフロンテープを
用いるので、ＡＣＦが十分に硬化し、十分な接着強度を
得る事ができる。また、テフロンテープのの巻き取り、
搬送に支障をきたすことがない。Further, according to the present invention, in the above method for mounting an IC chip for a non-contact IC card, the Teflon tape having a thickness in the range of 20 μm to 100 μm is used, so that the ACF is sufficiently cured and has sufficient adhesion. Strength can be obtained. In addition, winding of Teflon tape,
There is no hindrance to transportation.
【００３８】また、本発明は、上記非接触ＩＣカード用
ＩＣチップ実装方法において、前記実装装置のベース材
料として、セラミックを用いた実装装置で実装するの
で、ＩＣチップの表面側の周辺部でも温度が上がりＡＣ
Ｆが十分に硬化し、十分な接着強度を得る事ができる。Further, according to the present invention, in the method for mounting an IC chip for a non-contact IC card, the mounting is performed by a mounting device using ceramic as a base material of the mounting device. Rises AC
F is sufficiently cured, and sufficient adhesive strength can be obtained.
【００３９】また、本発明は、加熱と加圧によりＩＣチ
ップをフリップチップ実装する非接触ＩＣカード用ＩＣ
チップ実装装置において、テフロンテープ供給機構と、
セラミックのベースを具備したので、その実装工程にお
いては、実装装置のヒータヘッドがＡＣＦによって汚れ
てしまうことなく、また、実装されたＩＣチップとフィ
ルム基板においては、ＩＣチップとフィルム基板の高さ
の精度が保たれ、且つ、ＡＣＦが十分に硬化され十分な
接着強度が得られる非接触ＩＣカード用ＩＣチップ実装
装置となる。The present invention also provides a non-contact IC card IC in which an IC chip is flip-chip mounted by heating and pressing.
In the chip mounting device, a Teflon tape supply mechanism,
Since the ceramic base is provided, the heater head of the mounting apparatus is not contaminated by the ACF in the mounting process, and the height of the IC chip and the film substrate is not larger in the mounted IC chip and the film substrate. An IC chip mounting device for a non-contact IC card which maintains the accuracy and sufficiently hardens the ACF to obtain a sufficient adhesive strength.
【図１】本発明による非接触ＩＣカード用ＩＣチップの
実装装置の主要部分、及び実装方法の一実施例を示す説
明図である。FIG. 1 is an explanatory view showing one embodiment of a main part of a device for mounting an IC chip for a non-contact IC card and a mounting method according to the present invention.
【図２】実装装置にて、ＩＣチップが実装される状態を
示す説明図である。FIG. 2 is an explanatory diagram showing a state in which an IC chip is mounted in the mounting apparatus.
１、１１……実装装置のヒータヘッド ２……テフロンテープ ３……ＩＣチップ ４……ＩＣチップのバンプ ５……異方性導電膜（ＡＣＦ） ６……導電粒子 ７……フィルム基板 ８……回路パターン ９、１９……実装装置のベース ２２……テフロンテープ供給機構 Ａ……ヒータヘッド側のＡ点 Ｂ……ＩＣチップの表面側中央部Ｂ点 Ｃ……ＩＣチップの表面側周辺部Ｃ点 1, 11: heater head of mounting device 2: Teflon tape 3: IC chip 4: bump of IC chip 5: anisotropic conductive film (ACF) 6: conductive particles 7: film substrate 8: … Circuit pattern 9, 19… Base of mounting device 22… Teflon tape supply mechanism A… Point A on the heater head side B… Point B on the front side of the IC chip C… Peripheral part on the front side of the IC chip C point
Claims (4)
続・接着させる材料を用いて、ＩＣチップをフリップチ
ップ実装により非接触ＩＣカード用のフィルム基板上に
実装する方法であって、実装装置のヒータヘッドと、該
ＩＣチップとの間に、テフロンテープを挟み加熱と加圧
する事を特徴とする非接触ＩＣカード用ＩＣチップ実装
方法。1. A method for mounting an IC chip on a film substrate for a non-contact IC card by flip chip mounting using a material for connecting and bonding the IC chip and the substrate by heating and pressing. A method for mounting an IC chip for a non-contact IC card, characterized in that a Teflon tape is interposed between a heater head of the device and the IC chip and heated and pressed.
１００μｍの範囲のテフロンテープを用いることを特徴
とする請求項１記載の非接触ＩＣカード用ＩＣチップ実
装方法。2. The thickness of the Teflon tape is 20 μm or more.
2. The method for mounting an IC chip for a non-contact IC card according to claim 1, wherein a Teflon tape in a range of 100 [mu] m is used.
ックを用いた実装装置で実装することを特徴とする請求
項１、又は請求項２記載の非接触ＩＣカード用ＩＣチッ
プ実装方法。3. The method for mounting an IC chip for a non-contact IC card according to claim 1, wherein the mounting is performed by a mounting device using ceramic as a base material of the mounting device.
ップ実装する非接触ＩＣカード用ＩＣチップ実装装置に
おいて、テフロンテープ供給機構と、セラミックのベー
スを具備した事を特徴とする非接触ＩＣカード用ＩＣチ
ップ実装装置。4. A non-contact IC card mounting apparatus for a non-contact IC card for flip-chip mounting an IC chip by heating and pressing, comprising a Teflon tape supply mechanism and a ceramic base. IC chip mounting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19160599A JP2001024032A (en) | 1999-07-06 | 1999-07-06 | Mounting method and mounting apparatus of ic chip for non-contact ic card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19160599A JP2001024032A (en) | 1999-07-06 | 1999-07-06 | Mounting method and mounting apparatus of ic chip for non-contact ic card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001024032A true JP2001024032A (en) | 2001-01-26 |
Family
ID=16277428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19160599A Pending JP2001024032A (en) | 1999-07-06 | 1999-07-06 | Mounting method and mounting apparatus of ic chip for non-contact ic card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001024032A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002071469A1 (en) * | 2001-02-26 | 2002-09-12 | Sony Chemicals Corp. | Electric device producing method |
| US7076867B2 (en) | 2001-12-28 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Pressurizing method |
| JP2007115893A (en) * | 2005-10-20 | 2007-05-10 | Toshiba Matsushita Display Technology Co Ltd | Method and apparatus for thermocompression bonding |
| JP2009111326A (en) * | 2007-10-09 | 2009-05-21 | Hitachi Chem Co Ltd | Mounting method of circuit member |
| CN104900534A (en) * | 2014-03-06 | 2015-09-09 | 英飞凌科技股份有限公司 | METHOD FOR PRODUCING A DRIED PASTE LAYER and CONTINUOUS INSTALLATION |
| US9352958B2 (en) | 2013-11-15 | 2016-05-31 | Nagano Keiki Co., Ltd. | Physical quantity measurement sensor |
| US20220001581A1 (en) * | 2018-10-04 | 2022-01-06 | Nitto Denko Corporation | Heat-resistant release sheet and thermocompression bonding method |
-
1999
- 1999-07-06 JP JP19160599A patent/JP2001024032A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002071469A1 (en) * | 2001-02-26 | 2002-09-12 | Sony Chemicals Corp. | Electric device producing method |
| KR100790671B1 (en) | 2001-02-26 | 2007-12-31 | 소니 케미카루 앤드 인포메이션 디바이스 가부시키가이샤 | Electric device producing method |
| US7341642B2 (en) | 2001-02-26 | 2008-03-11 | Sony Corporation | Manufacturing method for electric device |
| CN100392832C (en) * | 2001-02-26 | 2008-06-04 | 索尼化学株式会社 | Manufacturing method for electric device |
| US7076867B2 (en) | 2001-12-28 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Pressurizing method |
| JP2007115893A (en) * | 2005-10-20 | 2007-05-10 | Toshiba Matsushita Display Technology Co Ltd | Method and apparatus for thermocompression bonding |
| JP2009111326A (en) * | 2007-10-09 | 2009-05-21 | Hitachi Chem Co Ltd | Mounting method of circuit member |
| US9352958B2 (en) | 2013-11-15 | 2016-05-31 | Nagano Keiki Co., Ltd. | Physical quantity measurement sensor |
| CN104900534A (en) * | 2014-03-06 | 2015-09-09 | 英飞凌科技股份有限公司 | METHOD FOR PRODUCING A DRIED PASTE LAYER and CONTINUOUS INSTALLATION |
| CN104900534B (en) * | 2014-03-06 | 2018-09-11 | 英飞凌科技股份有限公司 | Method for generating dried adhesive layer and pass through formula processing equipment |
| US20220001581A1 (en) * | 2018-10-04 | 2022-01-06 | Nitto Denko Corporation | Heat-resistant release sheet and thermocompression bonding method |
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