JP2000349036A - Semiconductor treatment method and manufacture of semiconductor device - Google Patents
Semiconductor treatment method and manufacture of semiconductor deviceInfo
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- JP2000349036A JP2000349036A JP11155692A JP15569299A JP2000349036A JP 2000349036 A JP2000349036 A JP 2000349036A JP 11155692 A JP11155692 A JP 11155692A JP 15569299 A JP15569299 A JP 15569299A JP 2000349036 A JP2000349036 A JP 2000349036A
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- semiconductor
- region
- semiconductor region
- light energy
- impurity concentration
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- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、薄膜半導体の処理
方法に関し、特に薄膜半導体内部に不純物元素の濃度勾
配を形成する半導体処理方法及び、その濃度勾配を利用
した半導体素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for processing a thin film semiconductor, and more particularly to a semiconductor processing method for forming a concentration gradient of an impurity element in a thin film semiconductor and a semiconductor device utilizing the concentration gradient.
【０００２】[0002]
【従来の技術】一般に、絶縁ゲート型電界効果トランジ
スタ(MOSFET)の信頼性を確保するためには、ドレイン端
の電界を緩和することが有効である。2. Description of the Related Art Generally, in order to ensure the reliability of an insulated gate field effect transistor (MOSFET), it is effective to reduce the electric field at the drain end.
【０００３】従来から、ドレイン端に低濃度の不純物領
域を設けることにより電界緩和を実現する、Lightly-Do
ped Drain （ＬＤＤ）構造のMOSFETが知られている。[0003] Conventionally, a lightly-doped type which realizes electric field relaxation by providing a low-concentration impurity region at a drain end has been known.
A MOSFET having a ped drain (LDD) structure is known.
【０００４】アモルファスシリコン(a-Si)等をレーザー
アニール処理して得られる多結晶シリコン（ poly-Si）
を用いた薄膜トランジスタ（ＴＦＴ）においても同様
に、様々なＬＤＤ構造が提案されている。Polycrystalline silicon (poly-Si) obtained by laser annealing amorphous silicon (a-Si) or the like
Similarly, various thin film transistors (TFTs) have been proposed for various LDD structures.
【０００５】更に、J.R. Ayresらによる論文、 "Analys
is of drain field and hot carrier stability of pol
y-Si Thin film transistors," (Jpn. J. Appl. Phys.,
vol. 37, Pt. 1 No. 4A, pp.1801-1807, 1998.)に解説
されているように、ドレイン領域とＬＤＤ領域の境界で
の不純物濃度の空間分布が緩やかに変化する方が電界緩
和の効果が大きい。ここで、不純物濃度の空間分布を変
化させる薄膜半導体の処理方法が必要になる。Further, a paper by JR Ayres et al., "Analys
is of drain field and hot carrier stability of pol
y-Si Thin film transistors, "(Jpn. J. Appl. Phys.,
vol. 37, Pt. 1 No. 4A, pp. 1801-1807, 1998.), it is the electric field that the spatial distribution of the impurity concentration at the boundary between the drain region and the LDD region gradually changes. The effect of relaxation is great. Here, a method of processing a thin film semiconductor that changes the spatial distribution of the impurity concentration is required.
【０００６】従来のこのような薄膜半導体の処理方法に
ついては、例えば上記の論文等に解説されている。[0006] A conventional method for processing such a thin film semiconductor is described in the above-mentioned papers, for example.
【０００７】ここでは、ＬＤＤ構造のｎ型ｐｏｌｙ−Ｓ
ｉ ＴＦＴの作成方法を例として挙げ、図７を参照しな
がら説明する。Here, an n-type poly-S having an LDD structure is used.
An example of a method of manufacturing an iTFT will be described with reference to FIG.
【０００８】第１に、プラズマＣＶＤ法等により、ガラ
ス等の絶縁性基板１１０の上に酸化膜（ＳｉＯ2）を堆
積して、絶縁性基板１１０からの不純物の拡散を防止す
るためのバリア層１２０とする。First, an oxide film (SiO 2 ) is deposited on an insulating substrate 110 made of glass or the like by a plasma CVD method or the like to prevent diffusion of impurities from the insulating substrate 110. 120.
【０００９】第２に、例えば減圧化学気相成膜( ＬＰＣ
ＶＤ）法により、ａ−Ｓｉ等の薄膜半導体をバリア層１
２０の上に全面に形成し、通常のフォトリソグラフィ工
程により、ＴＦＴに必要な場所を除いてａ−Ｓｉを除去
する。Second, for example, low pressure chemical vapor deposition (LPC)
VD) method to form a thin film semiconductor such as a-Si into a barrier layer 1
Then, a-Si is formed on the entire surface of the substrate 20 and a-Si is removed by a normal photolithography process except for a portion necessary for the TFT.
【００１０】第３に、フォトリソグラフィにより領域を
制限して、イオン注入法、またはイオンドーピング法に
より、この領域に選択的に高濃度の不純物（ｎ型の場合
はリン等）を導入する。Third, a region is limited by photolithography, and a high concentration impurity (such as phosphorus in the case of n-type) is selectively introduced into this region by ion implantation or ion doping.
【００１１】更に、同様のプロセスを用いて、別の領域
に低濃度で不純物を選択的に導入する。Further, by using a similar process, impurities are selectively introduced into another region at a low concentration.
【００１２】こうして、不純物が導入されない領域１３
０、低濃度の不純物が導入された領域１４０、高濃度の
不純物が導入された領域１５０が図示した位置に形成さ
れる。Thus, the region 13 into which the impurity is not introduced.
0, a region 140 into which a low concentration impurity is introduced, and a region 150 into which a high concentration impurity is introduced are formed at the positions shown in the figure.
【００１３】ここまでに必要なフォトリソグラフィ工程
は３回である。第４に、例えばＸｅＣｌ等のエキシマレ
ーザーからのパルス状の紫外光１６０を適度な強度で全
面に照射すると、上記の半導体領域１３０、１４０、１
５０のアモルファスシリコン（ａ−Ｓｉ）は殆ど瞬間的
に溶融される。The photolithography steps required so far are three times. Fourth, when the entire surface is irradiated with pulsed ultraviolet light 160 from an excimer laser such as XeCl or the like at an appropriate intensity, the above-described semiconductor regions 130, 140, 1
Fifty amorphous silicon (a-Si) melts almost instantaneously.
【００１４】溶融した領域の半導体層は、蓄えられた熱
が周囲へ逃げて冷却されるときに結晶化されてｐｏｌｙ
−Ｓｉに改質される。このとき、半導体領域１４０、１
５０においては、導入されたリン等の不純物がSiの格子
に取り込まれて電子的に活性化される、即ち、低濃度、
高濃度のｎ型ｐｏｌｙ−Ｓｉ領域がそれぞれ形成され
る。The semiconductor layer in the melted region is crystallized when the stored heat escapes to the surroundings and is cooled, so that the semiconductor layer is poly.
-Si is modified. At this time, the semiconductor regions 140, 1
At 50, the introduced impurities such as phosphorus are taken into the lattice of Si and activated electronically, that is, at a low concentration,
High-concentration n-type poly-Si regions are respectively formed.
【００１５】ここで、レーザー光１６０のエネルギーは
ａ−Ｓｉに殆ど全て吸収され、また、レーザー光のパル
ス幅も数１０ｎｓｅｃと非常に短いために、熱による基
板１１０の損傷は無い。Here, almost all of the energy of the laser beam 160 is absorbed by the a-Si, and the pulse width of the laser beam is very short, several tens of nanoseconds, so that the substrate 110 is not damaged by heat.
【００１６】また、バリア層１２０の存在により、基板
１１０からこれらの半導体領域１３０、１４０、１５０
への不純物の拡散も無い。最後に、このような構造の上
にゲート絶縁膜となる絶縁層１７０をプラズマＣＶＤ法
等により堆積し、更にその上にゲート電極となる金属層
をスパッタ等の方法で形成してフォトリソグラフィ法に
よりパターニングする。Further, due to the presence of the barrier layer 120, the semiconductor regions 130, 140, 150
There is no diffusion of impurities into the semiconductor. Finally, an insulating layer 170 serving as a gate insulating film is deposited on such a structure by a plasma CVD method or the like, and a metal layer serving as a gate electrode is further formed thereon by a method such as sputtering and the like. Perform patterning.
【００１７】この上に層間絶縁膜を形成した後にコンタ
クトホールをフォトリソグラフィ工程により形成し、金
属薄膜を形成してフォトグラフィ工程によりパターニン
グして、ＬＤＤ構造のｎ型ｐｏｌｙ−Ｓｉ ＴＦＴが形
成される。After forming an interlayer insulating film thereon, a contact hole is formed by a photolithography process, a metal thin film is formed and patterned by a photolithography process to form an n-type poly-Si TFT having an LDD structure. .
【００１８】ここで、不純物濃度の分布について考察す
る。イオン注入、あるいはイオンドーピングの工程が終
了した段階では、薄膜半導体内部の不純物分布はほぼ階
段状になる。Here, the distribution of the impurity concentration will be considered. At the stage where the ion implantation or ion doping process is completed, the impurity distribution inside the thin film semiconductor becomes almost step-like.
【００１９】次に、レーザー光を吸収して半導体層が溶
融した時には、半導体領域１３０と１４０との境界領域
で不純物濃度の差が大きいため、不純物原子が高濃度領
域から低濃度領域へ拡散する。冷却されて固化した後
は、不純物原子はＳｉ格子に取り込まれて拡散すること
は殆ど無い。Next, when the semiconductor layer is melted by absorbing the laser beam, the impurity concentration is large in the boundary region between the semiconductor regions 130 and 140, so that the impurity atoms diffuse from the high concentration region to the low concentration region. . After being cooled and solidified, the impurity atoms are hardly taken into the Si lattice and diffused.
【００２０】領域１４０と１５０の境界においても同様
である。この結果、レーザー光照射後の不純物濃度は、
各領域の境界でなだらかに変化して、図７（Ｄ）のよう
な分布になる。The same applies to the boundary between the regions 140 and 150. As a result, the impurity concentration after laser light irradiation is
The distribution gradually changes at the boundary of each region, and becomes a distribution as shown in FIG.
【００２１】また、以上に説明したＬＤＤ構造のｎ型Ｔ
ＦＴのみで回路を形成する場合、必要なフォトグラフィ
工程の数は６回である。仮にＣＭＯＳ回路を形成したい
場合には、レーザー照射の前にｐ型不純物の導入を追加
する必要があるため、必要なフォトリソグラフィ工程は
合計８回である。Further, the n-type T of the LDD structure described above is used.
When a circuit is formed only by FT, the number of necessary photography steps is six. If a CMOS circuit is to be formed, it is necessary to add a p-type impurity before laser irradiation, so that a total of eight photolithography steps are required.
【００２２】[0022]
【発明が解決しようとする課題】従来のレーザー光照射
による薄膜半導体の処理方法は、レーザー光が瞬間的に
照射されて半導体が溶融している短い時間に不純物元素
が拡散する現象を利用している。A conventional method for treating a thin film semiconductor by laser light irradiation utilizes a phenomenon in which an impurity element is diffused in a short time during which the laser light is instantaneously irradiated and the semiconductor is melted. I have.
【００２３】拡散現象は材料、濃度分布、時間に依存す
る。実験により拡散係数を抽出して、拡散方程式を解く
ことにより、不純物の空間分布を設計することは原理的
には可能だが、時間の要素はレーザーパルスの形状で決
まる、材料の選択余地は少ない、等の制約要因が多く、
事実上このような制御は困難である。ところが、例えば
ＬＤＤ構造のＴＦＴにおいて不純物濃度分布はドレイン
端の電界緩和の効果を出すための重要な設計パラメータ
であり、できるだけ自由に制御可能であることが望まし
い。The diffusion phenomenon depends on the material, concentration distribution, and time. It is possible in principle to design the spatial distribution of impurities by extracting the diffusion coefficient by experiments and solving the diffusion equation, but the time factor is determined by the shape of the laser pulse, and there is little room for material selection. There are many limiting factors such as
In practice, such control is difficult. However, for example, in a TFT having an LDD structure, the impurity concentration distribution is an important design parameter for exhibiting the effect of relaxing the electric field at the drain end, and it is desirable that the TFT can be controlled as freely as possible.
【００２４】また、上記のような従来のＬＤＤ構造のＴ
ＦＴの形成方法においては、ソース・ドレイン領域とＬ
ＤＤ領域に異なる濃度で不純物を導入するために、２回
の不純物イオンの導入工程と、それに付随した２回のフ
ォトリソグラフィ工程（フォトレジストの塗布、露光、
エッチング）が必要である。Further, the T of the conventional LDD structure as described above
In the method of forming the FT, the source / drain region and the L
In order to introduce impurities at different concentrations into the DD region, two impurity ion introduction steps and two accompanying photolithography steps (photoresist coating, exposure,
Etching) is required.
【００２５】これらの工程数の増加は、単に手間が増加
するという問題だけではなく、例えば、ゴミによるパタ
ーン欠陥、不均一なエッチングに起因するフォトレジス
ト残り、等の問題を引き起こす可能性がある。The increase in the number of steps may cause not only a problem of an increase in labor but also problems such as a pattern defect due to dust and a photoresist residue due to uneven etching.
【００２６】従って、ＴＦＴの信頼性を確保し製造コス
トの増加を抑えるためには、工程数の増加は必要最小限
に抑えるべきである。Therefore, in order to secure the reliability of the TFT and suppress the increase in the manufacturing cost, the increase in the number of steps should be minimized.
【００２７】尚、特開平４−２５４３３５号公報には、
半導体装置及びその製造方法に関して記載されている
が、イオン注入操作によって、第１導電型のチャネル領
域と第２導電型のドレイン領域の間にのみＬＤＤ構造を
形成し、ソース領域とチャネル領域間にはＬＤＤ構造を
形成しない様にしたトランジスタ構造が示されているの
みであり、光エネルギーを使用した半導体装置の製造技
術に関しては開示がない。Incidentally, Japanese Patent Application Laid-Open No. 4-254335 discloses that
Although a semiconductor device and a method for manufacturing the same are described, an LDD structure is formed only between a channel region of the first conductivity type and a drain region of the second conductivity type by an ion implantation operation, and an LDD structure is formed between the source region and the channel region. Discloses only a transistor structure in which an LDD structure is not formed, and does not disclose a technique for manufacturing a semiconductor device using light energy.
【００２８】又、特開平９−２７６２４号公報には、２
重側壁構造をマスクとして利用してＬＤＤ構造を形成す
る技術に関して記載されているが、イオン注入操作のみ
を使用するものであり、光エネルギーを使用した半導体
装置の製造技術に関しては開示がない。Japanese Patent Application Laid-Open No. 9-27624 discloses that
Although a technique for forming an LDD structure using a heavy sidewall structure as a mask is described, only an ion implantation operation is used, and there is no disclosure of a technique for manufacturing a semiconductor device using light energy.
【００２９】従って、本発明の目的は、上記した従来技
術の欠点を改良し、薄膜半導体内部の不純物濃度の空間
分布を高い自由度で制御して、高性能の薄膜半導体素子
を提供するものである。また、本発明の別の目的は、Ｌ
ＤＤ構造のＴＦＴの製造工程数の削減を目的としするも
のである。Accordingly, it is an object of the present invention to provide a high-performance thin-film semiconductor device in which the above-mentioned disadvantages of the prior art are improved and the spatial distribution of the impurity concentration inside the thin-film semiconductor is controlled with a high degree of freedom. is there. Another object of the present invention is to
It is intended to reduce the number of manufacturing steps of a TFT having a DD structure.
【００３０】[0030]
【課題を解決するための手段】本発明は上記した目的を
達成するため、以下に記載されたような技術構成を採用
するものである。The present invention employs the following technical configuration to achieve the above object.
【００３１】即ち、本発明に係る第１の態様としては、
光エネルギーを半導体へ供給して該半導体を改質する半
導体処理方法において，所定の不純物濃度を有する少な
くとも一つの半導体領域に、前記光エネルギーを選択的
に供給することにより，該光エネルギーの供給前とは異
なる不純物濃度を持つ半導体領域を形成する半導体処理
方法であり、より具体的には、光エネルギーを半導体へ
供給して該半導体を改質する半導体の処理方法であっ
て、不純物濃度が互いに異なる複数種の半導体領域が互
いに隣接して配置されている半導体に於ける当該複数種
の半導体領域群の接合部近傍に、光エネルギーを供給す
ることにより，該光エネルギーの供給前に当該互いに隣
接する半導体領域が持つ不純物濃度とは異なる不純物濃
度を持つ新たな半導体領域を当該隣接して配置されてい
る当該半導体領域群の間に形成する様に構成されている
半導体の処理方法である。That is, as a first aspect according to the present invention,
In a semiconductor processing method for supplying light energy to a semiconductor to modify the semiconductor, the light energy is selectively supplied to at least one semiconductor region having a predetermined impurity concentration, so that the light energy is supplied before the light energy is supplied. A semiconductor processing method for forming a semiconductor region having an impurity concentration different from that of the semiconductor region. More specifically, a semiconductor processing method for supplying light energy to the semiconductor to modify the semiconductor, wherein the impurity concentrations are different from each other. By supplying light energy to the vicinity of the junction of the plurality of types of semiconductor regions in a semiconductor in which a plurality of different types of semiconductor regions are disposed adjacent to each other, the plurality of types of semiconductor regions are adjacent to each other before the supply of the light energy. Semiconductor region group in which a new semiconductor region having an impurity concentration different from the impurity concentration of the semiconductor region A semiconductor processing method which is configured so as to form between.
【００３２】又、本発明に係る第２の態様としては、基
板上に、不純物を殆ど含まない第１の半導体領域と、所
定の不純物濃度を持つ不純物を含む第２及び第３の半導
体領域とを、該第１の半導体領域の相接しない２つの境
界に該第２の半導体領域と該第３の半導体領域がそれぞ
れ接するように配置して形成する工程と、該第２の半導
体領域と該第１の半導体領域が接する境界領域の近傍部
分に、光エネルギーを選択的に供給して該境界領域を挟
んだ所定の範囲を形成する半導体領域の半導体を改質す
る工程と、該光エネルギーの供給領域を、当該第３の半
導体領域の方向へ移動して、当該境界領域を含む半導体
領域部分までも改質する工程、とを含む半導体装置の製
造方法である。According to a second aspect of the present invention, a first semiconductor region containing almost no impurities, and second and third semiconductor regions containing impurities having a predetermined impurity concentration are formed on a substrate. Forming the second semiconductor region and the third semiconductor region on two non-adjoining boundaries of the first semiconductor region, respectively, and forming the second semiconductor region and the third semiconductor region. Selectively supplying light energy to a portion near the boundary region where the first semiconductor region is in contact with the first semiconductor region to modify a semiconductor in a semiconductor region forming a predetermined range sandwiching the boundary region; Moving the supply region in the direction of the third semiconductor region to modify even the semiconductor region portion including the boundary region.
【００３３】[0033]
【本発明の実施の形態】本発明に係る当該半導体の処理
方法及び半導体装置の製造方法は、上記した様な技術構
成を採用しているので、半導体内の不純物濃度の空間分
布を高い自由度で制御することができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The method for processing a semiconductor and the method for manufacturing a semiconductor device according to the present invention employ the above-mentioned technical configuration, so that the spatial distribution of the impurity concentration in the semiconductor can be increased with a high degree of freedom. Can be controlled by
【００３４】即ち、急峻な不純物濃度分布が望ましい領
域では、レーザー光の照射幅や重なり幅を小さくするこ
とにより、或いは逆になだらかな分布が望ましい領域で
は、照射幅や重なり幅を大きく設定することにより、そ
れぞれ、所望の不純物濃度分布を形成することができ
る。That is, in a region where a steep impurity concentration distribution is desired, the irradiation width or the overlap width of the laser beam is reduced, or conversely, in a region where a gentle distribution is desired, the irradiation width or the overlap width is set large. Thereby, a desired impurity concentration distribution can be formed.
【００３５】従って、本発明では、薄膜半導体内部の不
純物濃度分布の制御の自由度が高いので、そのような薄
膜半導体で形成される半導体素子の種類や目的に応じ
て、薄膜半導体内部の電界を制御高い自由度で制御でき
るという効果がある。Therefore, in the present invention, since the degree of freedom in controlling the impurity concentration distribution inside the thin film semiconductor is high, the electric field inside the thin film semiconductor is reduced according to the type and purpose of the semiconductor element formed of such a thin film semiconductor. There is an effect that control can be performed with a high degree of freedom.
【００３６】[0036]
【実施例】以下に、本発明に係る半導体の処理方法及び
半導体装置の製造方法の一具体例の構成を図面を参照し
ながら詳細に説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a configuration of one embodiment of a semiconductor processing method and a semiconductor device manufacturing method according to the present invention.
【００３７】即ち、図１は、本発明に係る半導体の処理
方法の一具体例の構成手順を説明する図であり、図中、
光エネルギーを半導体１へ供給して該半導体１を改質す
る半導体処理方法において，所定の不純物濃度を有する
少なくとも一つの半導体領域１０又は２０若しくはその
双方に、前記光エネルギー３０を選択的に供給すること
により，該光エネルギー３０の供給前とは異なる不純物
濃度を持つ半導体領域４０を形成する半導体処理方法が
示されている。That is, FIG. 1 is a diagram for explaining a configuration procedure of a specific example of a semiconductor processing method according to the present invention.
In the semiconductor processing method for modifying the semiconductor 1 by supplying light energy to the semiconductor 1, the light energy 30 is selectively supplied to at least one semiconductor region 10 or 20 or both having a predetermined impurity concentration. Accordingly, a semiconductor processing method for forming a semiconductor region 40 having an impurity concentration different from that before supply of the light energy 30 is shown.
【００３８】本発明に係る当該半導体の処理方法のより
詳細な構成を説明するならば、例えば、光エネルギー３
０を半導体１へ供給して該半導体１を改質する半導体の
処理方法に於て、不純物濃度が互いに異なる複数種の半
導体領域１０、２０が互いに隣接して配置されている半
導体１に於ける当該複数種の半導体領域群１０、２０の
接合部２近傍３、３’に、光エネルギー３０を供給する
ことにより，該光エネルギー３０の供給前に当該互いに
隣接する半導体領域１０、２０が持つ不純物濃度Ｎ１、
Ｎ２とは異なる不純物濃度Ｎ３を持つ新たな半導体領域
４０を当該隣接して配置されている当該半導体領域群１
０、２０の間に形成する様に処理するものである。A more detailed configuration of the semiconductor processing method according to the present invention will be described below.
In the semiconductor processing method for supplying 0 to the semiconductor 1 and modifying the semiconductor 1, the semiconductor 1 in which a plurality of types of semiconductor regions 10 and 20 having different impurity concentrations are arranged adjacent to each other. By supplying light energy 30 to the vicinity 3, 3 ′ of the junction 2 between the plurality of types of semiconductor region groups 10, 20, the impurities contained in the adjacent semiconductor regions 10, 20 before the supply of the light energy 30 are provided. Concentration N1,
A new semiconductor region 40 having an impurity concentration N3 different from N2 is added to the adjacent semiconductor region group 1
Processing is performed so as to form between 0 and 20.
【００３９】本発明に於ける当該半導体の処理方法に於
いては、当該新たな半導体領域４０が持つ不純物濃度Ｎ
３は、当該隣接して接合されている当該複数種の半導体
領域群１０、２０のそれぞれの領域が、当該光エネルギ
ー３０の供給以前に個別に持っていた不純物濃度Ｎ１、
Ｎ２の上限と下限とで決定される濃度範囲内のある値Ｎ
３を示す様に処理する事が望ましい。In the semiconductor processing method according to the present invention, the impurity concentration N of the new semiconductor region 40 is
Reference numeral 3 denotes an impurity concentration N1 that each of the plurality of types of semiconductor region groups 10 and 20 that are adjacent to each other has individually before the supply of the light energy 30;
A certain value N within a concentration range determined by the upper and lower limits of N2
It is desirable to process as shown in FIG.
【００４０】更に、本発明に於いては、当該光エネルギ
ー３０が供給される以前に互いに隣接して配置されてい
る複数種の半導体領域１０、２０と当該光エネルギー３
０が供給された後に当該複数種の半導体領域１０、２０
間に形成された新たな半導体領域４０とからなる半導体
に、イオン注入方式を使用することなく、所定の方向に
不純物濃度勾配が形成される様に処理する事が可能とな
る。Further, in the present invention, before the light energy 30 is supplied, the plurality of types of semiconductor regions 10 and 20 arranged adjacent to each other and the light energy
0, the plurality of types of semiconductor regions 10, 20
It is possible to process a semiconductor including the new semiconductor region 40 formed therebetween so that an impurity concentration gradient is formed in a predetermined direction without using an ion implantation method.
【００４１】従って、本発明に係る当該半導体の処理方
法に於いては、ある一定の不純物濃度である第１の不純
物濃度Ｎ１を持つ第１の半導体領域１０と，それとは異
なる一定の不純物濃度である第２の不純物濃度Ｎ２を持
つ第２の半導体領域２０とが接する境界領域２の近傍
３、３’に，光エネルギー３０を選択的に供給すること
により，該第１と第２の半導体領域１０、２０同志の接
合境界領域２の近傍３、３’に於いて当該光エネルギー
３０が供給された後に形成される第３の半導体領域４０
が持つ第３の不純物濃度Ｎ３を，該第１と第２の半導体
領域１０、２０のそれぞれが持つ第１と第２の不純物濃
度Ｎ１、Ｎ２で限定される範囲の中のある値にすること
が可能となる。Therefore, in the semiconductor processing method according to the present invention, the first semiconductor region 10 having the first impurity concentration N1 which is a certain impurity concentration and the first semiconductor region 10 having a certain impurity concentration different from the first semiconductor region 10 are used. By selectively supplying light energy 30 to the vicinity 3, 3 'of the boundary region 2 where the second semiconductor region 20 having a certain second impurity concentration N2 is in contact with the first and second semiconductor regions 20, A third semiconductor region 40 formed after the light energy 30 is supplied in the vicinity 3, 3 ′ of the junction boundary region 2 between the 10, 20 junctions.
The third impurity concentration N3 of the first and second semiconductor regions 10 and 20 is set to a certain value within a range limited by the first and second impurity concentrations N1 and N2 of the first and second semiconductor regions 10 and 20, respectively. Becomes possible.
【００４２】更に、本発明に於いては、当該半導体の処
理方法に於て、当該新たに形成される当該半導体領域４
０が持つ不純物濃度Ｎ３は、当該隣接して接合されてい
る当該複数種の半導体領域１０、２０群のそれぞれの領
域が、当該光エネルギーの供給以前に個別に持っていた
不純物濃度Ｎ１、Ｎ２の平均値とする事も望ましい。Further, according to the present invention, in the semiconductor processing method, the newly formed semiconductor region 4 may be used.
0 has an impurity concentration N3 of the impurity concentration N1 or N2 that the respective regions of the plurality of types of semiconductor regions 10 and 20 that are adjacently joined individually have before the supply of the light energy. It is also desirable to use an average value.
【００４３】上記した本発明に係る当該半導体の処理方
法の他の具体例の手順の例を示すならば、例えば、基板
上に、不純物を殆ど含まない第１の半導体領域８０と、
所定の不純物濃度を持つ不純物を含む第２及び第３の半
導体領域７０、７０’とを、該第１の半導体領域８０の
相接しない２つの境界４、５に該第２の半導体領域７０
と該第３の半導体領域７０’がそれぞれ接するように配
置して形成する工程と、該第２の半導体領域７０と該第
１の半導体領域８０が接する境界領域の近傍部分に、光
エネルギー３０を選択的に供給して該境界領域を挟んだ
所定の範囲を形成する半導体領域の半導体を改質する工
程と、該第３の半導体領域７０’と該第１の半導体領域
８０が接する境界領域の近傍部分に、光エネルギー３０
を選択的に供給して該境界領域を挟んだ所定の範囲を形
成する半導体領域の半導体を改質する工程と、を含む様
に構成された半導体素子の処理方法であっても良い。An example of the procedure of another specific example of the semiconductor processing method according to the present invention will be described. For example, a first semiconductor region 80 containing almost no impurities is formed on a substrate.
The second and third semiconductor regions 70 and 70 ′ containing impurities having a predetermined impurity concentration are placed on two non-adjoining boundaries 4 and 5 of the first semiconductor region 80.
And forming the third semiconductor region 70 ′ so as to be in contact with each other, and applying the light energy 30 to a portion near a boundary region where the second semiconductor region 70 and the first semiconductor region 80 are in contact with each other. Selectively reforming the semiconductor in the semiconductor region forming a predetermined range sandwiching the boundary region, and modifying the semiconductor region in the boundary region where the third semiconductor region 70 ′ and the first semiconductor region 80 are in contact with each other. In the vicinity, light energy 30
And selectively reforming the semiconductor in a semiconductor region forming a predetermined range sandwiching the boundary region.
【００４４】又、本発明に係る当該半導体の処理方法に
於いては、当該光エネルギー３０は、所定の幅を有する
スリット状のレーザー光により得られるものである事が
望ましい。In the semiconductor processing method according to the present invention, it is desirable that the light energy 30 is obtained by a slit-shaped laser beam having a predetermined width.
【００４５】更に、本発明に係る当該半導体の処理方法
に於いては、当該スリット状のレーザー光３０を連続し
て互いに接続配置されている複数種の不純物濃度が異な
る半導体領域を予め定められた所定のピッチで順次に移
動走査する様に構成する事が望ましい。Further, in the semiconductor processing method according to the present invention, a plurality of semiconductor regions having different impurity concentrations in which the slit-shaped laser beams 30 are continuously connected to each other are predetermined. It is desirable that the scanning is performed sequentially at a predetermined pitch.
【００４６】一方、本発明に係る当該半導体の処理方法
に於いては、当該スリット状のレーザー光３０は、予め
定められた走査量移動した後、所定の半導体領域の所定
の部位に照射されると言う走査、照射操作が間欠的に繰
り返される様に構成されている事が望ましい。On the other hand, in the semiconductor processing method according to the present invention, the slit-shaped laser light 30 is irradiated on a predetermined portion of a predetermined semiconductor region after moving by a predetermined scanning amount. It is preferable that the scanning and irradiation operations are intermittently repeated.
【００４７】又、本発明に於いては、上記した走査、照
射操作を実行するに当たり、１の照射操作に於ける当該
半導体領域の所定の部位に照射される当該スリット状の
レーザー光の照射範囲の少なくとも一部が、別の照射操
作に於ける当該半導体領域の所定の部位に照射される当
該スリット状のレーザー光の照射範囲の少なくとも一部
とオーバーラップするように処理する事も好ましい。In the present invention, when the above-described scanning and irradiation operations are performed, the irradiation range of the slit-shaped laser light irradiated to a predetermined portion of the semiconductor region in one irradiation operation It is also preferable that at least a part of the laser beam is overlapped with at least a part of the irradiation range of the slit-shaped laser beam irradiated to a predetermined portion of the semiconductor region in another irradiation operation.
【００４８】更に、本発明に係る当該半導体の処理方法
に於いては、一つの半導体領域を照射するレーザー光の
幅と他の半導体領域を照射するレーザー光の幅とを互い
に異ならせる事も可能である。Further, in the semiconductor processing method according to the present invention, the width of the laser beam for irradiating one semiconductor region may be different from the width of the laser beam for irradiating another semiconductor region. It is.
【００４９】つまり、本発明に於ける上記した半導体処
理方法は、不純物濃度の異なる複数の半導体領域に同時
に光エネルギーを選択的に供給して改質することによ
り、光エネルギーの供給前とは異なる不純物濃度を持つ
領域を形成することを特徴とするものである。That is, the above-described semiconductor processing method according to the present invention is different from before the supply of light energy by selectively supplying light energy to a plurality of semiconductor regions having different impurity concentrations at the same time for reforming. It is characterized in that a region having an impurity concentration is formed.
【００５０】更に、本発明に於ける上記した半導体の処
理方法に於いては、ある一定の不純物濃度を持つ第１の
半導体領域と、それとは異なる一定の不純物濃度を持つ
第２の半導体領域とが接する境界領域に、光エネルギー
を選択的に供給することにより、該境界領域の不純物濃
度を、該第１と第２の半導体領域のそれぞれの不純物濃
度で限定される範囲の中のある値にすることを特徴とす
るものである。Further, in the above-described semiconductor processing method according to the present invention, the first semiconductor region having a certain impurity concentration and the second semiconductor region having a certain impurity concentration different from the first semiconductor region are provided. Selectively supplies light energy to the boundary region where the first and second semiconductor regions are in contact with each other, so that the impurity concentration in the boundary region becomes a certain value within a range limited by the respective impurity concentrations of the first and second semiconductor regions. It is characterized by doing.
【００５１】次に、本発明に於ける上記した半導体の処
理方法のより詳細な具体例を実施例の形で以下に説明す
る。Next, more specific examples of the above-described semiconductor processing method according to the present invention will be described in the form of embodiments.
【００５２】（第１の具体例）図１は、本発明の半導体
処理方法の第１の具体例に於ける操作手順を説明するた
めの、半導体１の断面図である。(First Specific Example) FIG. 1 is a cross-sectional view of a semiconductor 1 for explaining an operation procedure in a first specific example of a semiconductor processing method of the present invention.
【００５３】図１を参照しながら本発明の半導体形成方
法の動作原理を以下に説明する。The principle of operation of the semiconductor forming method of the present invention will be described below with reference to FIG.
【００５４】つまり、図１には示してはしていないが、
先ず、ガラス等の絶縁性基板にバリア層となる酸化膜を
形成し、その上面に全面に半導体１、例えば薄膜半導体
１を形成するところまでは従来の技術と同じである。That is, although not shown in FIG. 1,
First, an oxide film to be a barrier layer is formed on an insulating substrate such as glass, and the semiconductor 1, for example, the thin film semiconductor 1 is formed on the entire upper surface of the oxide film.
【００５５】この薄膜半導体１は不純物を含まないか、
或いは、ＬＰＣＶＤ法で成膜中に不純物ガスを導入する
等して、意図的にある濃度Ｎ１の不純物を含有するよう
に形成する。This thin film semiconductor 1 contains no impurities,
Alternatively, the film is formed so as to intentionally contain an impurity of a certain concentration N1, for example, by introducing an impurity gas during film formation by the LPCVD method.
【００５６】つまり、上記不純物濃度Ｎ１は、不純物濃
度０の場合も当然含んでいる。That is, the impurity concentration N1 naturally includes the case where the impurity concentration is zero.
【００５７】これに、１回のフォトリソグラフィ工程と
イオン注入工程またはイオンドーピング工程により、リ
ン等の不純物を薄膜半導体１の特定の領域、例えば２０
を選択して導入する。In addition, by one photolithography step and an ion implantation step or an ion doping step, an impurity such as phosphorus is added to a specific region of the thin film semiconductor 1, for example, 20 nm.
Select and introduce.
【００５８】このようにして、図１（Ａ）に示すよう
に、ある濃度Ｎ１の不純物を含有する１の領域１0 と、
それとは異なる不純物濃度Ｎ２を含有する第２の領域２
０とが形成される。As described above, as shown in FIG. 1A, one region 10 containing an impurity of a certain concentration N1 is formed.
Second region 2 containing impurity concentration N2 different from that
0 is formed.
【００５９】第２に、図１（Ｂ）に示すように、第１の
領域１０と第２の領域２０とが接する部分２とその近傍
部位３、３’に、第１のレーザー光３０を照射して溶
融、結晶化する。溶融中には領域１０内の不純物が領域
２０へ拡散する。その結果、この図のように、第１の領
域１０と第２の領域２０とで溶融される薄膜半導体の体
積が等しい場合には、図１（Ｃ）に示すように、当該両
領域の接する部分２とその近傍部位３、３’を構成する
領域、つまり第３の領域４０の不純物濃度Ｎ３は、第
１、第２の領域の平均値になる。Second, as shown in FIG. 1B, the first laser beam 30 is applied to the portion 2 where the first region 10 and the second region 20 are in contact with each other and the nearby portions 3 and 3 '. Irradiation causes melting and crystallization. During melting, impurities in the region 10 diffuse into the region 20. As a result, as shown in FIG. 1, when the volume of the thin film semiconductor melted in the first region 10 and the volume of the thin film semiconductor melted in the second region 20 are equal, as shown in FIG. The impurity concentration N3 of the region constituting the portion 2 and the neighboring portions 3, 3 ′, that is, the impurity concentration N3 of the third region 40 is an average value of the first and second regions.
【００６０】一般的には、Ｖ１、Ｖ２を、それぞれ溶融
される第１、第２の領域の体積とすると、第３の領域４
０の不純物濃度Ｎ３は次式で与えられる。Generally, if V1 and V2 are the volumes of the first and second regions to be melted, respectively, the third region 4
The impurity concentration N3 of 0 is given by the following equation.
【００６１】 Ｎ３＝（Ｎ１・Ｖ１＋Ｎ２・Ｖ２）／（Ｖ１＋Ｖ２） （１） 次に、図１（Ｄ）に示すように、この第３の領域４０
と、第２の領域２０とが接する領域（第４の領域６０と
呼ぶ）に第２のレーザー光５０を照射することにより、
この領域を溶融、結晶化する。N3 = (N1 · V1 + N2 · V2) / (V1 + V2) (1) Next, as shown in FIG. 1D, the third region 40
And by irradiating the second laser beam 50 to a region (referred to as a fourth region 60) in contact with the second region 20,
This region is melted and crystallized.
【００６２】その結果、図１（Ｅ）に示すように、第４
の領域６０の不純物濃度は、上述の理由により、第２、
第３の領域の中間値になる。As a result, as shown in FIG.
The impurity concentration of the region 60 is set at the second,
It is an intermediate value in the third area.
【００６３】この過程を繰り返すことにより、レーザー
光照射を繰り返す方向に沿って不純物濃度が単調に減少
する分布を形成できる。このようにして図１（Ｆ）に示
すような階段状の不純物分布が形成できる。By repeating this process, it is possible to form a distribution in which the impurity concentration monotonously decreases along the direction in which the laser beam irradiation is repeated. Thus, a stepwise impurity distribution as shown in FIG. 1F can be formed.
【００６４】以上の説明に用いた図では、説明の便宜
上、レーザー光の照射を一定の照射幅と移動量とで繰り
返すように図示したが、本発明の半導体処理方法はこれ
らのパラメータ設定に制限を加えるものではない。In the drawings used in the above description, for convenience of explanation, the irradiation of the laser beam is shown to be repeated with a fixed irradiation width and a fixed moving amount, but the semiconductor processing method of the present invention is limited to these parameter settings. It does not add.
【００６５】例えば、５μｍの長さのＬＤＤ構造を作成
する場合はレーザー光３０、５０の照射幅は１μｍ、連
続した２回のレーザー光照射の重なり幅は０．５μｍと
する、というように、所望の不純物分布に応じてレーザ
ー光の照射幅を適宜設定すればよい。For example, when forming an LDD structure having a length of 5 μm, the irradiation width of the laser beams 30 and 50 is 1 μm, and the overlap width of two consecutive laser beam irradiations is 0.5 μm. The irradiation width of the laser beam may be set as appropriate according to a desired impurity distribution.
【００６６】また、基板上の領域に応じて、レーザー光
３０、５０の照射幅や重なり幅を変えることも可能であ
る。例えば、急峻な不純物濃度分布が望ましい領域で
は、照射幅や重なり幅を小さくすればよい。It is also possible to change the irradiation width and the overlap width of the laser beams 30 and 50 according to the region on the substrate. For example, in a region where a steep impurity concentration distribution is desired, the irradiation width and the overlap width may be reduced.
【００６７】逆に、なだらかな分布が望ましい領域で
は、照射幅や重なり幅を大きく設定すればよい。このよ
うに、レーザー光３０、５０の照射領域の幅と連続した
２回若しくは、それ以上の回数のの照射領域の重なり幅
とを制御することにより、この図１（Ｆ）に示す“階
段”の幅や高さを調整することができる。Conversely, in a region where a gentle distribution is desired, the irradiation width and the overlap width may be set large. As described above, by controlling the width of the irradiation region of the laser beams 30 and 50 and the overlapping width of the irradiation region two or more times consecutively, the “stair” shown in FIG. Width and height can be adjusted.
【００６８】即ち、薄膜半導体の内部の不純物濃度分布
を高い自由度で制御することができる。That is, the impurity concentration distribution inside the thin film semiconductor can be controlled with a high degree of freedom.
【００６９】（第２の具体例）第１の具体例では、不純
物濃度の高い領域から低い領域に向けてレーザー光の照
射と移動を繰り返したが、本具体例に於いては、これと
は逆に、不純物濃度が低い領域から高い領域に向かって
レーザー光３０、５０の照射と移動を繰り返したもので
あっても良い。(Second Specific Example) In the first specific example, irradiation and movement of laser light were repeated from a region having a high impurity concentration to a region having a low impurity concentration. Conversely, irradiation and movement of the laser beams 30, 50 may be repeated from a region having a low impurity concentration to a region having a high impurity concentration.
【００７０】本発明の第２の具体例として、このような
例を模式的に図２に示す。図２で図１と対応する構成要
素については１番違いの番号を付している。この具体例
の動作は、濃度の変化が逆である点を除いて、第１の具
体例と全く同じである。As a second specific example of the present invention, such an example is schematically shown in FIG. In FIG. 2, the components corresponding to those in FIG. The operation of this example is exactly the same as that of the first example, except that the change in density is reversed.
【００７１】（第３の具体例）本発明の第３の具体例と
して、２次元配列したＬＤＤ構造のＴＦＴを形成すると
きに本発明の半導体処理方法を適用した例を示すもので
あって、その詳細を図３に示す。(Third Specific Example) As a third specific example of the present invention, an example in which the semiconductor processing method of the present invention is applied when forming a two-dimensionally arrayed TFT having an LDD structure is shown. The details are shown in FIG.
【００７２】即ち、図３は、基板１００上にＴＦＴを形
成すべき領域と、第１回目のレーザー光９０の照射領域
とを模式的に示した平面図である。That is, FIG. 3 is a plan view schematically showing a region where a TFT is to be formed on the substrate 100 and a region irradiated with the first laser light 90.
【００７３】基板１００上に、不純物を高濃度で含む半
導体領域７０と、低濃度の不純物を含むか、または意図
的には不純物を全く導入しない領域８０とが形成されて
いる。On a substrate 100, a semiconductor region 70 containing a high concentration of impurities and a region 80 containing a low concentration of an impurity or intentionally not introducing an impurity are formed.
【００７４】半導体領域７０はＴＦＴのソースあるいは
ドレインとなる領域で、不純物濃度は一定であればよ
い。後に、このＴＦＴを外部回路に接続するためにコン
タクトホールがこの領域の一部に形成されるので、矢印
方向の距離は数μｍ程度である。The semiconductor region 70 is a region that becomes a source or a drain of the TFT, and the impurity concentration may be constant. Later, since a contact hole is formed in a part of this region to connect this TFT to an external circuit, the distance in the direction of the arrow is about several μm.
【００７５】また、半導体領域８０はＴＦＴのチャネル
になる領域で、不純物を含まないか、或いは一定の低濃
度の不純物を含む。また、この矢印方向の幅はチャネル
幅となり、通常、数μｍ程度であることが多い。The semiconductor region 80 is a region that becomes a channel of the TFT and does not contain impurities or contains a certain low concentration of impurities. The width in the direction of the arrow is the channel width, which is usually about several μm in many cases.
【００７６】次に、図３を参照しながら本発明の第３の
具体例の動作を説明する。Next, the operation of the third embodiment of the present invention will be described with reference to FIG.
【００７７】ここで第１に、図３に示す様に、スリット
状で所定の幅を持つ線状に成型したレーザー光９０を半
導体領域７０の一端に重ねて照射する。この際、当該レ
ーザー光は、当該半導体領域７０内にのみ照射されるも
のであり、係る構成によって、当該半導体領域７０が非
晶質（アモルファス）シリコンを使用する場合には、当
該レーザー光による光エネルギーを選択的に当該半導体
領域７０に供給される事によって、当該半導体領域７０
をポリシリコンに変質させ、電気的に活性化させる事に
なる。First, as shown in FIG. 3, a linearly shaped laser beam 90 having a slit shape and a predetermined width is irradiated onto one end of the semiconductor region 70 in an overlapping manner. At this time, the laser light is applied only to the inside of the semiconductor region 70, and when the semiconductor region 70 uses amorphous silicon, the light by the laser light is used. By selectively supplying energy to the semiconductor region 70, the semiconductor region 70
Is transformed into polysilicon and electrically activated.
【００７８】つまり、本具体例に於て、当該半導体領域
７０内を当該レーザー光９０が走査されながらレーザー
光を照射する事によって、当該半導体領域７０のアモル
ファスシリコンがポリシリコンに変質し活性化される事
になる。That is, in this specific example, the semiconductor region 70 is irradiated with the laser beam while being scanned by the laser beam 90, whereby the amorphous silicon in the semiconductor region 70 is transformed into polysilicon and activated. Will be.
【００７９】又、当該半導体領域７０と当該半導体領域
８０との境界に跨がって当該レーザー光が照射されると
共に、引続き当該レーザー光９０が当該半導体領域８０
内を順次に走査しながら、当該レーザー光を照射する事
によって、当該半導体領域７０から当該半導体領域８０
の所定の領域まで、又当該半導体領域８０の所定の領域
から当該半導体領域７０までの部位に、当該不純物濃度
が段階的に変化する半導体領域が連続的に形成される事
になり、半導体装置に於けるＬＤＤ構造が形成される。In addition, the laser light is applied across the boundary between the semiconductor region 70 and the semiconductor region 80, and the laser light 90 continues to be applied to the semiconductor region 80.
By irradiating the laser light while sequentially scanning the inside, the semiconductor region 70 to the semiconductor region 80 are irradiated.
The semiconductor region in which the impurity concentration changes stepwise is continuously formed up to a predetermined region of the semiconductor region 80 and from the predetermined region of the semiconductor region 80 to the semiconductor region 70. An LDD structure is formed.
【００８０】本具体例に於て使用される当該レーザー光
９０のレーザー照射領域の幅は１μｍとした。次に、第
１回目の当該レーザー光の照射領域と一部が重なり合う
ように、当該レーザー光９０を走査して照射位置を調整
した後に、同一の照射幅で２回目の照射を行う。The width of the laser irradiation area of the laser beam 90 used in this example was 1 μm. Next, after the laser beam 90 is scanned and the irradiation position is adjusted so that the first irradiation region of the laser beam partially overlaps, the second irradiation is performed with the same irradiation width.
【００８１】この際の、当該レーザー光の互いの重なり
幅は０．５μｍとした。これを矢印で示した方向へ繰り
返して行うことにより、ＴＦＴを形成すべき場所の特に
チャネル領域の端部に、単調減少と単調増加からなる所
望の不純物濃度分布を持つ半導体領域を形成することが
できる。At this time, the overlapping width of the laser beams was set to 0.5 μm. By repeating this in the direction indicated by the arrow, it is possible to form a semiconductor region having a desired impurity concentration distribution consisting of monotonically decreasing and monotonically increasing, especially at the end of the channel region where the TFT is to be formed. it can.
【００８２】ここで図示したような横方向に長い形状の
レーザー光を用いれば、このような一連のレーザー光照
射により、複数のＴＦＴとなる領域の半導体を同時に改
質することができる。If a laser beam having a long shape in the horizontal direction as shown here is used, a semiconductor in a region to be a plurality of TFTs can be simultaneously modified by such a series of laser beam irradiations.
【００８３】本具体例では横１行に配列したＴＦＴに相
当する全ての半導体領域の改質に必要なレーザー光の照
射の回数は、１５／０．５＝３０となる。但し、半導体
領域７０、８０の矢印方向の幅をそれぞれ５μｍとし
た。In this specific example, the number of laser light irradiations necessary for modifying all the semiconductor regions corresponding to the TFTs arranged in one horizontal row is 15 / 0.5 = 30. However, the width of each of the semiconductor regions 70 and 80 in the direction of the arrow was 5 μm.
【００８４】このようにして形成される複数のＬＤＤ構
造のＴＦＴの応用例としては、例えば、液晶ディスプレ
イのＴＦＴ基板のように、２次元配列した複数の画素の
アナログスイッチ、或いは、液晶ディスプレイ、プラズ
マ・ディスプレイ、プリンタ・エンジン等の機器を駆動
するための駆動用集積回路、等が挙げられる。As an application example of the TFT having a plurality of LDD structures formed in this way, for example, an analog switch of a plurality of pixels arranged two-dimensionally, such as a TFT substrate of a liquid crystal display, a liquid crystal display, a plasma display, or the like. A driving integrated circuit for driving a device such as a display and a printer engine;
【００８５】（第４の具体例）図３の具体例において、
当該レーザー光９０は、同一の照射幅を有するものを使
用したが、当該レーザー光９０の照射幅は、必ずしも同
じ照射幅で、基板の端からもう一方の端まで、矢印方向
にレーザー光照射を繰り返す必要はない。(Fourth Specific Example) In the specific example of FIG.
The laser light 90 used had the same irradiation width, but the irradiation width of the laser light 90 was not necessarily the same irradiation width, and the laser light irradiation was performed in the direction of the arrow from one end of the substrate to the other end. No need to repeat.
【００８６】本発明の第４の具体例は、レーザー光の照
射幅の異なる少なくとも２種類のレーザー光９１、９２
で半導体を処理する例を示すもので、図４は、はその手
順を示す説明図である。The fourth embodiment of the present invention relates to at least two types of laser beams 91 and 92 having different laser beam irradiation widths.
FIG. 4 is an explanatory view showing the procedure for processing a semiconductor.
【００８７】図３と同じ構成要素には同じ番号を付して
いる。The same components as those in FIG. 3 are denoted by the same reference numerals.
【００８８】以下に第４の具体例の動作を説明する。The operation of the fourth example will be described below.
【００８９】即ち、第１に、図４（Ａ）に示すように、
数μｍ程度の広い幅のレーザー光９１を用いて基板１０
０上の全ての半導体領域７０及び半導体領域８０を照射
する。That is, first, as shown in FIG.
The substrate 10 is formed using a laser beam 91 having a wide width of about several μm.
Irradiate all semiconductor regions 70 and semiconductor regions 80 above zero.
【００９０】但しここでは、両領域７０と８０の境界
で、且つ当該半導体領域８０側の所定の幅の部分９５に
はレーザー光が照射されないものとする。However, here, it is assumed that the laser beam is not irradiated on the boundary 95 between the two regions 70 and 80 and on the semiconductor region 80 with a predetermined width.
【００９１】つまり、本具体例に於いては、当該トラン
ジスタに於けるドレイン領域及びソース領域を形成する
当該半導体領域７０、及びチャネル領域を構成する当該
半導体領域８０をそれぞれ一回のレーザー光９１の照射
によって、活性化処理を行うものである。That is, in this specific example, the semiconductor region 70 forming the drain region and the source region and the semiconductor region 80 forming the channel region in the transistor are each irradiated with one laser beam 91. An activation process is performed by irradiation.
【００９２】従って、本具体例に於ける当該レーザー光
９１の照射幅は、当該半導体領域７０の幅と一致する様
に設定されると共に、当該半導体領域８０の幅よりも狭
い幅を有する様に設定される事が望ましい。Therefore, the irradiation width of the laser beam 91 in this specific example is set so as to coincide with the width of the semiconductor region 70 and has a width smaller than the width of the semiconductor region 80. It is desirable to be set.
【００９３】つまり、当該半導体領域７０と当該半導体
領域８０との境界部と、当該境界部から半導体領域８０
内部に延在する半導体領域９５には、当該レーザー光９
１が照射されない様に構成する事が望ましい。That is, the boundary between the semiconductor region 70 and the semiconductor region 80, and the semiconductor region 80
The laser light 9 is applied to the semiconductor region 95 extending inside.
It is desirable to configure so that 1 is not irradiated.
【００９４】又、当該トランジスタに於ける上記第２
に、図４（Ｂ）に示すように、レーザー光９２の照射幅
を１μｍ程度に狭めて、半導体領域７０と半導体領域８
０の境界を跨いで照射すると共に当該境界部から半導体
領域８０内部に延在する半導体領域部分９５を照射する
事によって、第１の具体例のときと同じ理由により、こ
の領域の不純物濃度は両領域の不純物濃度の間で段階的
に変化した構成を採る様になる。In the transistor, the second
Next, as shown in FIG. 4B, the irradiation width of the laser light 92 is reduced to about 1 μm, and the semiconductor region 70 and the semiconductor region 8 are formed.
By irradiating over the boundary of zero and irradiating the semiconductor region portion 95 extending from the boundary to the inside of the semiconductor region 80, for the same reason as in the first specific example, the impurity concentration of this region becomes lower. A configuration that changes stepwise between the impurity concentrations of the regions is adopted.
【００９５】更にその値は、式（１）により、即ち、ど
ちらの領域をより広くレーザー光の照射領域に含めるか
により制御できる。Further, the value can be controlled by equation (1), that is, which area is included in the laser beam irradiation area more widely.
【００９６】この具体例では、第３の具体例のように同
じ狭い照射幅で繰り返しレーザー光を照射した場合に比
較して、照射回数を減らすことができる。この例では、
横１行に配列したＴＦＴに相当する全ての半導体領域の
改質に必要なレーザー光の照射の回数は、３＋２＝５で
ある。In this example, the number of times of irradiation can be reduced as compared with the case where laser light is repeatedly irradiated with the same narrow irradiation width as in the third example. In this example,
The number of laser light irradiations necessary for modifying all the semiconductor regions corresponding to the TFTs arranged in one horizontal row is 3 + 2 = 5.
【００９７】但し、半導体領域７０、８０の矢印方向の
幅をそれぞれ５μｍとした。また、レーザー光の照射幅
を変更するためには光学系の変更が必要で、通常はこれ
に時間がかかり、大量生産に適さない。However, the width of the semiconductor regions 70 and 80 in the direction of the arrow was 5 μm. Further, in order to change the irradiation width of the laser beam, it is necessary to change the optical system, which usually takes time and is not suitable for mass production.
【００９８】しかし、この具体例では、レーザー光の照
射幅の変更を最小限に留めることができる。このよう
に、この具体例の手順によれば、半導体素子製造工程の
スループットが向上し、製造コストを低減できる。However, in this specific example, the change in the irradiation width of the laser beam can be minimized. Thus, according to the procedure of this specific example, the throughput of the semiconductor element manufacturing process is improved, and the manufacturing cost can be reduced.
【００９９】（第５の具体例）本発明の第５の具体例
も、幅の異なる２種類のレーザー光９１、９２で半導体
１を処理するもので、図５はその手順を示す説明図であ
る。(Fifth Embodiment) The fifth embodiment of the present invention also processes the semiconductor 1 with two types of laser beams 91 and 92 having different widths. FIG. 5 is an explanatory view showing the procedure. is there.
【０１００】図３と同じ構成要素には同じ番号を付して
いる。以下に第５の具体例の動作を説明する。The same components as those in FIG. 3 are denoted by the same reference numerals. The operation of the fifth specific example will be described below.
【０１０１】第１に、図５（Ａ）に示すように、数μｍ
程度の広い幅のレーザー光９１を用いて基板上の全ての
半導体領域７０を照射する。但しここでは、半導体領域
８０との境界にはレーザー光９１が照射されないものと
する。First, as shown in FIG. 5A, several μm
All the semiconductor regions 70 on the substrate are irradiated by using a laser beam 91 having a wide width. However, here, it is assumed that the laser light 91 is not irradiated on the boundary with the semiconductor region 80.
【０１０２】第２に、図５（Ｂ）に示すように、レーザ
ー光９２の照射幅を１μｍ程度に狭めて、半導体領域７
０と半導体領域８０の境界を跨いで照射する。第３に、
同じ狭い照射幅でのレーザー光９２の照射を半導体領域
８０の全ての領域で繰り返して、半導体領域８０との境
界まで到達して完了する。Second, as shown in FIG. 5B, the irradiation width of the laser light 92 is reduced to about 1 μm to
Irradiation is performed over the boundary between 0 and the semiconductor region 80. Third,
The irradiation of the laser beam 92 with the same narrow irradiation width is repeated in all the regions of the semiconductor region 80, and reaches the boundary with the semiconductor region 80 and is completed.
【０１０３】レーザー光の照射領域の重なり幅は０．５
μｍである。ここで、この領域の不純物濃度が単調減少
した後に単調増加になる理由は、第３の具体例のときと
同様である。The overlap width of the laser light irradiation area is 0.5
μm. Here, the reason why the impurity concentration in this region monotonously decreases and then increases monotonically is the same as in the third specific example.
【０１０４】この具体例では、幅の狭いレーザー光を一
部重ねながら半導体領域８０を照射する。最初の照射で
形成された結晶を種として次の結晶がレーザーの走査方
向に成長するので、第４の具体例と比較すると、粒径の
大きい結晶を得ることができる。In this specific example, the semiconductor region 80 is irradiated while partially overlapping a narrow laser beam. Since the next crystal grows in the laser scanning direction using the crystal formed by the first irradiation as a seed, a crystal having a larger grain size can be obtained as compared with the fourth specific example.
【０１０５】但し、レーザー光の照射回数は、第３の具
体例より少ないが第４の具体例よりは多い。この例で
は、横１行に配列したＴＦＴに相当する全ての半導体領
域の改質に必要なレーザー光の照射の回数は、２＋５／
０．５＝１２である。However, the number of times of laser beam irradiation is smaller than in the third specific example, but larger than in the fourth specific example. In this example, the number of laser light irradiations necessary for modifying all the semiconductor regions corresponding to the TFTs arranged in one horizontal row is 2 + 5 /
0.5 = 12.
【０１０６】但し、半導体領域７０、８０の矢印方向の
幅をそれぞれ５μｍとした。However, the width of the semiconductor regions 70 and 80 in the direction of the arrow was 5 μm.
【０１０７】（第６の具体例）以上に述べた第１から第
５の具体例においては、レーザー光照射の前に予め不純
物濃度の異なる２つの領域を形成していた。(Sixth Specific Example) In the first to fifth specific examples described above, two regions having different impurity concentrations are formed in advance before laser light irradiation.
【０１０８】選択的に不純物を導入するためには最低１
回のフォトリソグラフィ工程が必要である。ｎ型ＴＦＴ
とｐ型ＴＦＴを同一基板上に形成してＣＭＯＳ回路を構
成する場合は、異なる種類の不純物を別々の領域に導入
するので、２回のフォトリソグラフィ工程が必要にな
る。In order to selectively introduce impurities, at least 1
One photolithography step is required. n-type TFT
When a CMOS circuit is formed by forming a TFT and a p-type TFT on the same substrate, different types of impurities are introduced into different regions, so that two photolithography steps are required.
【０１０９】これに対し、本発明の第６の具体例は、気
相からのレーザードーピング技術を用いて、工程数の削
減を可能とする例である。On the other hand, the sixth specific example of the present invention is an example in which the number of steps can be reduced by using a laser doping technique from a gas phase.
【０１１０】つまり、気相からのレーザードーピングは
従来から知られており、例えばM.A.Crowderらによる論
文、"Low-te ｍperature single-crystal Ｓｉ−ＴＦ
Ｔ's fabricated on Si films processed via sequenti
al lateral solidification,"（ IEEE Electron Device
Letters vol. EDL−１9, No. 8, August １998, pp.
３０6-３０8 ）に解説されている。That is, laser doping from the gas phase is conventionally known, and is described in, for example, a paper by MACrowder et al., "Low-temperature single-crystal Si-TF.
T's fabricated on Si films processed via sequenti
al lateral solidification, "(IEEE Electron Device
Letters vol. EDL-19, No. 8, August 1998, pp.
306-308).
【０１１１】即ち、薄膜半導体を形成した基板を真空容
器に入れてレーザー光を照射するときに、例えばフォス
フィン（ＰＨ3）、ジボラン（Ｂ2Ｈ6) のように不純物
を含むガスを導入し、気相中から溶融した半導体内に不
純物を導入する技術である。That is, when the substrate on which the thin film semiconductor is formed is placed in a vacuum vessel and irradiated with laser light, a gas containing impurities such as phosphine (PH 3 ) or diborane (B 2 H 6 ) is introduced. This is a technique for introducing impurities into the semiconductor melted from the gas phase.
【０１１２】図６は、本発明の第６の具体例の手順を示
す説明図である。FIG. 6 is an explanatory diagram showing the procedure of the sixth specific example of the present invention.
【０１１３】図５と同じ構成要素には同じ番号を付して
いる。The same components as those in FIG. 5 are denoted by the same reference numerals.
【０１１４】以下に第６の具体例の動作を説明する。第
１に、不純物を含まないか意図的に定量の不純物を導入
した領域８０が全面に形成された基板１００を真空容器
に入れ、フォスフィン（ＰＨ3）を気相に導入する。The operation of the sixth example will be described below. First, the substrate 100 in which the region 80 which does not contain impurities or into which a certain amount of impurities is intentionally introduced is formed on the entire surface is placed in a vacuum vessel, and phosphine (PH 3 ) is introduced into the gas phase.
【０１１５】ここで、図６（Ａ）に示すように、数μｍ
程度の広い幅のレーザー光９１を用いて基板１００上の
特定の半導体領域７０を照射すると、溶融、固化した領
域は高濃度のｎ型半導体領域７５となる。Here, as shown in FIG.
When a specific semiconductor region 70 on the substrate 100 is irradiated with the laser beam 91 having a width as large as possible, the melted and solidified region becomes a high-concentration n-type semiconductor region 75.
【０１１６】第２に、フォスフィン（ＰＨ3）の代わり
にジボラン（Ｂ2Ｈ6) を真空容器中に導入して、図６
（Ｂ）に示すように、基板１００上の別の領域８５に広
い照射幅のレーザー光９１を照射する。Second, diborane (B 2 H 6 ) was introduced into the vacuum vessel instead of phosphine (PH 3 ), and FIG.
As shown in (B), another area 85 on the substrate 100 is irradiated with a laser beam 91 having a wide irradiation width.
【０１１７】当該レーザー光９１が照射された領域８５
は高濃度のｐ型半導体領域７６になる。第３に、図６
（Ｃ）に示すように、レーザー光９１の照射幅を１μｍ
程度に狭めて、半導体領域７５、または半導体領域７６
とで挟まれた半導体領域８０の全ての領域で、第５の具
体例と同じ狭い照射幅でのレーザー光９２の照射を繰り
返す。The area 85 irradiated with the laser beam 91
Becomes a high concentration p-type semiconductor region 76. Third, FIG.
As shown in (C), the irradiation width of the laser light 91 is 1 μm.
The semiconductor region 75 or the semiconductor region 76
The irradiation of the laser beam 92 with the same narrow irradiation width as in the fifth specific example is repeated in all the regions of the semiconductor region 80 sandwiched between.
【０１１８】最後にＴＦＴとなるべき領域を残してその
他の領域の薄膜半導体をフォトリソグラフィ工程により
除去することにより、基板１００上にｎ型ＴＦＴ、ｐ型
ＴＦＴのソース、ドレイン、チャネルとなる半導体領域
を形成することができる。Finally, by removing the thin film semiconductor in other regions except for the region to be the TFT by a photolithography process, the semiconductor region serving as the source, drain and channel of the n-type TFT and the p-type TFT is formed on the substrate 100. Can be formed.
【０１１９】更に、ゲート酸化膜をこの上に形成した後
に、ゲート電極を２回目のフォトリソグラフィ工程によ
り形成する。その後、層間絶縁膜を形成した後にコンタ
クトホールを３回目のフォトリソグラフィ工程により形
成し、最後に金属薄膜で配線を施す。After a gate oxide film is formed thereon, a gate electrode is formed by a second photolithography step. Then, after forming an interlayer insulating film, a contact hole is formed by a third photolithography step, and finally, a wiring is formed with a metal thin film.
【０１２０】従って、４回のフォトリソグラフィ工程で
ＣＭＯＳ回路を構成できる。Therefore, a CMOS circuit can be formed by four photolithography steps.
【０１２１】尚、以上に説明した本発明の具体例では、
薄膜半導体としてガラス基板上に形成したアモルファス
シリコン（ａ−Ｓｉ）をポリシリコン（ｐｏｌｙ−Ｓ
ｉ）に改質する場合を取り上げたが、基板や半導体の種
類はこれらに限るものではない。In the specific example of the present invention described above,
Amorphous silicon (a-Si) formed on a glass substrate as a thin film semiconductor is replaced with polysilicon (poly-S).
Although the case of reforming is described in i), the types of the substrate and the semiconductor are not limited to these.
【０１２２】例えば、熱酸化したシリコンウェハー上に
ポリシリコン（ｐｏｌｙ−Ｓｉ）を形成してレーザー照
射により改質する場合にも、本発明を適用してその不純
物分布を高い自由度で制御することができる。従って、
このような具体例も本発明の変形具体例と見なす。For example, in the case where polysilicon (poly-Si) is formed on a thermally oxidized silicon wafer and modified by laser irradiation, the present invention is applied to control the impurity distribution with a high degree of freedom. Can be. Therefore,
Such a specific example is also regarded as a modified specific example of the present invention.
【０１２３】上記した具体例から明らかな様に、本発明
に係る当該半導体の処理方法を使用する事によって、従
来とは全く異なった方法により、トランジスタ等を含む
半導体装置を効率的に製造する事が可能となるのであ
る。As is clear from the above-described specific examples, by using the semiconductor processing method according to the present invention, a semiconductor device including a transistor or the like can be efficiently manufactured by a method completely different from the conventional one. It becomes possible.
【０１２４】つまり、具体的には、例えば、上記した各
方法を使用して、トランジスタに於けるソース若しくは
ドレイン拡散層領域を形成する事により、当該半導体装
置を製造する事が可能となる。That is, specifically, for example, by forming a source or drain diffusion layer region in a transistor by using each of the above-described methods, it becomes possible to manufacture the semiconductor device.
【０１２５】更に、本発明を使用した半導体素子の製造
の具体的な手順としては、例えば、基板上に、不純物を
殆ど含まない第１の半導体領域と、所定の不純物濃度を
持つ不純物を含む第２及び第３の半導体領域とを、該第
１の半導体領域の相接しない２つの境界に該第２の半導
体領域と該第３の半導体領域がそれぞれ接するように配
置して形成する第１の工程と、該第２の半導体領域と該
第１の半導体領域が接する境界領域の近傍部分に、光エ
ネルギーを選択的に供給して該境界領域を挟んだ所定の
範囲を形成する半導体領域の半導体を改質する第２の工
程と、該光エネルギーの供給領域を、当該第３の半導体
領域の方向へ移動して、当該境界領域を含む半導体領域
部分までも改質する第３の工程、とを含む半導体装置の
製造方法が可能である。Further, as a specific procedure for manufacturing a semiconductor device using the present invention, for example, a first semiconductor region containing almost no impurities and a second semiconductor region containing impurities having a predetermined impurity concentration are formed on a substrate. A first semiconductor region formed by arranging a second semiconductor region and a third semiconductor region such that the second semiconductor region and the third semiconductor region are respectively in contact with two boundaries that do not contact each other of the first semiconductor region; A step of selectively supplying light energy to a portion near a boundary region where the second semiconductor region and the first semiconductor region are in contact with each other to form a predetermined region sandwiching the boundary region; And a third step of moving the light energy supply region in the direction of the third semiconductor region to modify even the semiconductor region portion including the boundary region. Semiconductor device manufacturing method including That.
【０１２６】同様に、本発明に係る当該半導体装置の製
造方法の他の具体例としては、基板上に、不純物を殆ど
含まない第１の半導体領域と、高い濃度の不純物を含む
第２、第３の半導体領域とを、該第１の半導体領域の相
接しない２つの境界に該第２の半導体領域と該第３の半
導体領域がそれぞれ接するように配置して形成する第１
の工程と、該第２の半導体領域に、光エネルギーを選択
的に供給して該第２の半導体領域の半導体を改質する第
２の工程と、該第３の半導体領域に、光エネルギーを選
択的に供給して該第３の半導体領域の半導体を改質する
第３の工程と、該第２の半導体領域と該第１の半導体領
域が接する境界領域の近傍に、光エネルギーを選択的に
供給して該境界領域の近傍を構成する半導体を改質する
第４の工程と、該第３の半導体領域と該第１の半導体領
域が接する境界領域の近傍に、光エネルギーを選択的に
供給して該境界領域の近傍を構成する半導体を改質する
第５の工程とを含む半導体素子の製造方法が可能であ
る。Similarly, as another specific example of the method of manufacturing a semiconductor device according to the present invention, a first semiconductor region containing almost no impurities and a second and a second semiconductor regions containing high concentration of impurities are formed on a substrate. And a third semiconductor region formed by arranging the second semiconductor region and the third semiconductor region so as to be in contact with two boundaries that are not in contact with each other of the first semiconductor region.
A second step of selectively supplying light energy to the second semiconductor region to modify a semiconductor in the second semiconductor region; and applying a light energy to the third semiconductor region. A third step of selectively supplying and modifying the semiconductor in the third semiconductor region; and selectively applying light energy to a vicinity of a boundary region where the second semiconductor region and the first semiconductor region are in contact with each other. A fourth step of reforming the semiconductor constituting the vicinity of the boundary region by supplying light energy to the semiconductor region, and selectively applying light energy to the vicinity of the boundary region where the third semiconductor region and the first semiconductor region are in contact. A fifth step of supplying and reforming the semiconductor constituting the vicinity of the boundary region.
【０１２７】本発明に係る当該半導体装置の製造方法と
更に他の具体例としては、例えば、基板上に、不純物元
素を殆ど含まない第１の半導体を形成する成膜工程と、
不純物元素を含む気体を該基板上に供給した状態で、光
エネルギーを選択的に供給し、該第１の半導体の一部を
改質することにより、該不純物元素を含む第２の半導体
を形成する工程と、該第２の半導体領域と該第１の半導
体領域が接する境界領域の近傍に、光エネルギーを選択
的に供給して該境界領域を含む近傍の半導体を改質する
ことにより、第３の半導体領域を形成する工程とを含ん
だ半導体装置の製造方法。As a method of manufacturing the semiconductor device according to the present invention and still another specific example, for example, a film forming step of forming a first semiconductor containing almost no impurity element on a substrate;
A second semiconductor containing the impurity element is formed by selectively supplying light energy and reforming a part of the first semiconductor while a gas containing the impurity element is supplied onto the substrate. And selectively supplying light energy to the vicinity of the boundary region where the second semiconductor region and the first semiconductor region are in contact with each other to modify the semiconductor in the vicinity including the boundary region. Forming a semiconductor region according to (3).
【０１２８】又、本発明に係る当該半導体装置の製造方
法の別の具体例としては、複数の前記第１、第２、第３
の半導体領域が前記基板上に規則正しく配列されて形成
され、前記光エネルギーが供給される領域に複数の前記
第１、或いは第２、或いは第３の半導体領域が含まれる
様に構成したものである。As another specific example of the method for manufacturing a semiconductor device according to the present invention, a plurality of the first, second, and third
Are formed so as to be regularly arranged on the substrate, and the region to which the light energy is supplied includes a plurality of the first, second, or third semiconductor regions. .
【０１２９】[0129]
【発明の効果】本発明に係る半導体の処理方法及び半導
体装置の製造方法は、上記した様な技術構成を採用して
いるので、半導体内の不純物濃度の空間分布を高い自由
度で制御することができる。The method for processing a semiconductor and the method for manufacturing a semiconductor device according to the present invention employ the above-described technical configuration, so that the spatial distribution of the impurity concentration in the semiconductor can be controlled with a high degree of freedom. Can be.
【０１３０】即ち、急峻な不純物濃度分布が望ましい領
域では、レーザー光の照射幅や重なり幅を小さくするこ
とにより、或いは逆になだらかな分布が望ましい領域で
は、照射幅や重なり幅を大きく設定することにより、そ
れぞれ、所望の不純物濃度分布を形成することができ
る。That is, in a region where a steep impurity concentration distribution is desired, the irradiation width or overlap width of the laser beam is reduced, or conversely, in a region where a gentle distribution is desired, the irradiation width or overlap width is set large. Thereby, a desired impurity concentration distribution can be formed.
【０１３１】従って、本発明では、薄膜半導体内部の不
純物濃度分布の制御の自由度が高いので、そのような薄
膜半導体で形成される半導体素子の種類や目的に応じ
て、薄膜半導体内部の電界を制御高い自由度で制御でき
るという効果がある。Therefore, in the present invention, since the degree of freedom in controlling the impurity concentration distribution inside the thin film semiconductor is high, the electric field inside the thin film semiconductor is reduced according to the type and purpose of the semiconductor element formed of such a thin film semiconductor. There is an effect that control can be performed with a high degree of freedom.
【０１３２】次に、本発明に於いては、不純物濃度が一
定でよい領域は幅の広いレーザー光で照射することによ
り、照射回数を低減できる。その結果、製造プロセスの
スループットが向上するという効果がある。Next, in the present invention, the number of times of irradiation can be reduced by irradiating a region where the impurity concentration may be constant with a wide laser beam. As a result, there is an effect that the throughput of the manufacturing process is improved.
【０１３３】更に、本発明に於いては、チャネルとなる
領域のポリシリコンを大粒径化することができるので、
高性能のＴＦＴを形成できるという効果がある。Further, according to the present invention, the polysilicon in the region serving as the channel can be made large in grain size.
There is an effect that a high-performance TFT can be formed.
【０１３４】又、本発明に於いては、ＣＭＯＳ回路を４
回のフォトリソグラフィ工程で形成することができるの
で、工程数の削減により製造コストも低く抑えられ、ま
た、ＴＦＴ回路の信頼性を確保できるという効果があ
る。Further, in the present invention, the CMOS circuit has four
Since it can be formed in one photolithography step, there is an effect that the manufacturing cost can be reduced by reducing the number of steps, and the reliability of the TFT circuit can be ensured.
【図１】図１は、本発明の半導体処理方法の第１の具体
例の構成を示す説明図であり、不純物濃度の高い領域か
ら低い領域へ向かって、幅の狭いレーザー光の照射によ
り溶融、結晶化することにより、単調に減少する不純物
濃度分布を形成する状態が示されている。FIG. 1 is an explanatory view showing a configuration of a first specific example of a semiconductor processing method according to the present invention, in which a region from a region with a high impurity concentration to a region with a low impurity concentration is melted by irradiation with a narrow laser beam; 1 shows a state in which crystallization forms a monotonously decreasing impurity concentration distribution.
【図２】図２は、本発明の半導体処理方法の第２の具体
例の構成を示す説明図であり、不純物濃度の低い領域か
ら高い領域へ向かって、幅の狭いレーザー光の照射によ
り溶融、結晶化することにより、単調に増加する不純物
濃度分布を形成する状態が示されている。FIG. 2 is an explanatory view showing a configuration of a second specific example of the semiconductor processing method according to the present invention. 1 shows a state in which crystallization forms a monotonically increasing impurity concentration distribution.
【図３】図３は、本発明の半導体処理方法の第３の具体
例の構成を示す説明図であり、同一ライン上に配列した
複数の領域を、幅が狭くて長いレーザー光を用いて同時
に照射して溶融、結晶化することにより、基板上に複数
のＬＤＤ構造のＴＦＴの半導体領域を形成する状態が示
されている。FIG. 3 is an explanatory diagram showing a configuration of a third specific example of the semiconductor processing method of the present invention, in which a plurality of regions arranged on the same line are formed by using a narrow and long laser beam; The state where a plurality of semiconductor regions of a TFT having an LDD structure are formed on a substrate by simultaneous irradiation and melting and crystallization is shown.
【図４】図４は、本発明の半導体処理方法の第４の具体
例の構成を示す説明図であり、一定の不純物濃度の領域
は幅の広いレーザー光で一括して照射し、不純物濃度に
勾配を持たせる必要のある領域を幅の狭いレーザー光で
照射することにより、基板上に複数のＬＤＤ構造のＴＦ
Ｔの半導体領域を形成するときのレーザー光の照射回数
を大幅に低減させる状態がが示されている。FIG. 4 is an explanatory view showing the configuration of a fourth specific example of the semiconductor processing method of the present invention. A region having a constant impurity concentration is collectively irradiated with a wide laser beam, By irradiating a region where it is necessary to have a gradient with a narrow laser beam, a plurality of TFs having an LDD structure
A state is shown in which the number of laser light irradiations when forming a semiconductor region of T is significantly reduced.
【図５】図５は、本発明の半導体処理方法の第５の具体
例の構成を示す説明図であり、ソース・ドレインになる
領域は幅の広いレーザー光で一括して照射し、チャネル
になる領域は幅の狭いレーザー光を一部の領域で重ね合
せながら照射することにより、基板上に複数のＬＤＤ構
造のＴＦＴの半導体領域を形成するときのレーザー光の
照射回数を或程度低減しながら、チャネル領域の半導体
の品質を高める方法が示されている。FIG. 5 is an explanatory view showing a configuration of a fifth embodiment of the semiconductor processing method of the present invention. A region serving as a source / drain is collectively irradiated with a wide laser beam, and a channel is irradiated to the channel. By irradiating a narrow area of the laser beam while overlapping a part of the area, the number of laser beam irradiations when forming a plurality of semiconductor regions of the LDD structure TFT on the substrate is reduced to some extent. And a method for improving the quality of the semiconductor in the channel region.
【図６】図６は、本発明の半導体処理方法の第６の実施
の形態を示す説明図であり、不純物を含むガスを基板上
に導入してレーザー光で照射することにより半導体内に
不純物を導入し、ＬＤＤ構造のＴＦＴを多数配列して形
成する状態が示されている。FIG. 6 is an explanatory view showing a sixth embodiment of the semiconductor processing method of the present invention, in which a gas containing an impurity is introduced into a substrate and irradiated with a laser beam, whereby the impurity is introduced into the semiconductor. Is introduced, and a large number of LDD-structured TFTs are arranged and formed.
【図７】図７は、従来の半導体形成方法の一具体例の手
順を示す説明図である。FIG. 7 is an explanatory view showing a procedure of one specific example of a conventional semiconductor forming method.
１…半導体膜 ２…接合境界領域 ３、３’…境界領域の近傍部分 ４、５…接合境界 １０…第１の半導体領域 ２０…第２の半導体領域 ３０、５０…光エネルギー、レーザー光 ４０、６０…半導体領域 ７０…高濃度の不純物を含む薄膜半導体領域 ７０’…第３の半導体領域 ８０、８５…低濃度の不純物を含む、あるいは意図的に
は不純物を導入していない薄膜半導体領域 ７５…高濃度の不純物を含むｎ型薄膜半導体領域 ７６…高濃度の不純物を含むｐ型薄膜半導体領域 ９０、９１、９２…レーザー光 １００…基板 １１０…基板 １２０…バリア層 １３０…薄膜半導体（真性領域） １４０…薄膜半導体（低濃度n型領域） １５０…薄膜半導体（高濃度n型領域） １６０…レーザー光 １７０…絶縁膜 １８０…ゲート電極DESCRIPTION OF SYMBOLS 1 ... Semiconductor film 2 ... Junction boundary area 3, 3 '... Around the boundary area 4, 5 ... Junction boundary 10 ... First semiconductor area 20 ... Second semiconductor area 30, 50 ... Light energy, laser light 40, Reference numeral 60: a semiconductor region 70: a thin-film semiconductor region 70 containing a high-concentration impurity 70 ': a third semiconductor region 80, 85 ... a thin-film semiconductor region 75 containing a low-concentration impurity or not intentionally introducing an impurity 75 N-type thin film semiconductor region containing high-concentration impurities 76 p-type thin film semiconductor regions containing high-concentration impurities 90, 91, 92 laser light 100 substrate 110 substrate 120 barrier layer 130 thin film semiconductor (intrinsic region) 140: thin-film semiconductor (low-concentration n-type region) 150: thin-film semiconductor (high-concentration n-type region) 160: laser beam 170: insulating film 180: gate electrode
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 29/78 ６２７Ｇ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 29/78 627G
Claims (18)
体を改質する半導体処理方法において，所定の不純物濃
度を有する少なくとも一つの半導体領域に、前記光エネ
ルギーを選択的に供給することにより，該光エネルギー
の供給前とは異なる不純物濃度を持つ半導体領域を形成
することを特徴とする半導体処理方法。In a semiconductor processing method for modifying a semiconductor by supplying light energy to a semiconductor, the light energy is selectively supplied to at least one semiconductor region having a predetermined impurity concentration. A semiconductor processing method comprising forming a semiconductor region having an impurity concentration different from that before supply of light energy.
体を改質する半導体の処理方法であって、不純物濃度が
互いに異なる複数種の半導体領域が互いに隣接して配置
されている半導体に於ける当該複数種の半導体領域群の
接合部近傍に、光エネルギーを供給することにより，該
光エネルギーの供給前に当該互いに隣接する半導体領域
が持つ不純物濃度とは異なる不純物濃度を持つ新たな半
導体領域を当該隣接して配置されている当該半導体領域
群の間に形成することを特徴とする半導体の処理方法。2. A method for treating a semiconductor in which light energy is supplied to the semiconductor to modify the semiconductor, wherein a plurality of types of semiconductor regions having different impurity concentrations are arranged adjacent to each other. By supplying light energy to the vicinity of the junction of the plurality of types of semiconductor regions, a new semiconductor region having an impurity concentration different from the impurity concentration of the adjacent semiconductor regions is provided before the supply of the light energy. A method for processing a semiconductor, wherein the semiconductor is formed between the adjacent semiconductor region groups.
は、当該隣接して接合されている当該複数種の半導体領
域群のそれぞれの領域が、当該光エネルギーの供給以前
に個別に持っていた不純物濃度の上限と下限とで決定さ
れる濃度範囲内のある値を示す様に処理する事を特徴と
する請求項２記載の半導体の処理方法。3. The impurity concentration of the new semiconductor region is such that the respective regions of the plurality of types of semiconductor regions that are adjacent to each other have individual impurities before supply of the light energy. 3. The semiconductor processing method according to claim 2, wherein the processing is performed so as to show a certain value within a concentration range determined by an upper limit and a lower limit of the concentration.
いに隣接して配置されている複数種の半導体領域と当該
光エネルギーが供給された後に当該複数種の半導体領域
間に形成された新たな半導体領域とからなる半導体に、
所定の方向に不純物濃度勾配が形成される様に処理する
事を特徴とする請求項２記載の半導体の処理方法。4. A plurality of semiconductor regions arranged adjacent to each other before the light energy is supplied, and a new semiconductor formed between the plurality of semiconductor regions after the light energy is supplied. Semiconductors consisting of
3. The semiconductor processing method according to claim 2, wherein the processing is performed so that an impurity concentration gradient is formed in a predetermined direction.
物濃度を持つ第１の半導体領域と，それとは異なる一定
の不純物濃度である第２の不純物濃度を持つ第２の半導
体領域とが接する境界領域近傍に，光エネルギーを選択
的に供給することにより，該第１と第２の半導体領域同
志の接合境界領域近傍に於いて当該光エネルギーが供給
された後に形成される第３の半導体領域が持つ第３の不
純物濃度を，該第１と第２の半導体領域のそれぞれが持
つ第１と第２の不純物濃度で限定される範囲の中のある
値にすることを特徴とする請求項２乃至第４項の何れか
に記載の半導体の処理方法。5. A first semiconductor region having a first impurity concentration, which is a certain impurity concentration, and a second semiconductor region having a second impurity concentration, which is a different constant impurity concentration, are in contact with each other. By selectively supplying light energy near the boundary region, a third semiconductor region formed after the light energy is supplied near the junction boundary region between the first and second semiconductor regions. 3. The method according to claim 2, wherein the third impurity concentration of the first and second semiconductor regions is set to a certain value within a range limited by the first and second impurity concentrations of the first and second semiconductor regions. A method for processing a semiconductor according to any one of claims 4 to 4.
持つ不純物濃度は、当該隣接して接合されている当該複
数種の半導体領域群のそれぞれの領域が、当該光エネル
ギーの供給以前に個別に持っていた不純物濃度の平均値
である事を特徴とする請求項２乃至５の何れかに記載の
半導体の処理方法。6. The impurity concentration of the newly formed semiconductor region is such that each of the plurality of types of semiconductor regions that are adjacently joined to each other is individually set before the supply of the light energy. 6. The method for processing a semiconductor according to claim 2, wherein the average value of the impurity concentrations has been used.
半導体領域と，所定の不純物濃度を持つ不純物を含む第
２及び第３の半導体領域とを，該第１の半導体領域の相
接しない２つの境界に該第２の半導体領域と該第３の半
導体領域がそれぞれ接するように配置して形成する工程
と，該第２の半導体領域と該第１の半導体領域が接する
境界領域の近傍部分に，光エネルギーを選択的に供給し
て該境界領域を挟んだ所定の範囲を形成する半導体領域
の半導体を改質する工程と，該第３の半導体領域と該第
１の半導体領域が接する境界領域の近傍部分に，光エネ
ルギーを選択的に供給して該境界領域を挟んだ所定の範
囲を形成する半導体領域の半導体を改質する工程とを含
むことを特徴とする半導体の処理方法。7. A semiconductor device comprising: a first semiconductor region containing substantially no impurities; and second and third semiconductor regions containing impurities having a predetermined impurity concentration on a substrate. Forming the second semiconductor region and the third semiconductor region so as to be in contact with each other at two boundaries, and the vicinity of the boundary region where the second semiconductor region and the first semiconductor region are in contact with each other. Selectively supplying light energy to the portion to modify a semiconductor in a semiconductor region forming a predetermined range sandwiching the boundary region; and contacting the third semiconductor region with the first semiconductor region. Selectively supplying light energy to a portion near the boundary region to modify a semiconductor in a semiconductor region forming a predetermined range sandwiching the boundary region.
スリット状のレーザー光により得られる事を特徴とする
請求項１乃至７の何れかに記載の半導体の処理方法。8. The semiconductor processing method according to claim 1, wherein said light energy is obtained by a slit-shaped laser beam having a predetermined width.
互いに接続配置されている複数種の不純物濃度が異なる
半導体領域を予め定められた所定のピッチで順次に移動
走査する事を特徴とする請求項８記載の半導体の処理方
法。9. The semiconductor laser device according to claim 1, wherein said slit-shaped laser light is sequentially moved and scanned at a predetermined pitch at a plurality of semiconductor regions having different impurity concentrations continuously connected and arranged. Item 9. A method for processing a semiconductor according to Item 8.
定められた走査量移動した後、所定の半導体領域の所定
の部位に照射される走査が繰り返される様に構成されて
いる事を特徴とする請求項９記載の半導体の処理方法。10. The scanning device according to claim 1, wherein the slit-shaped laser light is moved by a predetermined scanning amount, and thereafter, a scan applied to a predetermined portion of a predetermined semiconductor region is repeated. The method for processing a semiconductor according to claim 9.
の所定の部位に照射される当該スリット状のレーザー光
の照射範囲の少なくとも一部が、別の照射操作に於ける
当該半導体領域の所定の部位に照射される当該スリット
状のレーザー光の照射範囲の少なくとも一部とオーバー
ラップするように処理する事を特徴とする請求項９又は
１０に記載の半導体の処理方法。11. A method according to claim 1, wherein at least a part of the irradiation range of the slit-shaped laser light applied to a predetermined portion of the semiconductor region in one irradiation operation is different from a predetermined range of the semiconductor region in another irradiation operation. 11. The semiconductor processing method according to claim 9, wherein the processing is performed so as to overlap at least a part of the irradiation range of the slit-shaped laser light applied to the part.
射される当該スリット状のレーザー光の幅と当該他の半
導体領域の所定の部位に照射される当該スリット状のレ
ーザー光の幅とが異なっている事を特徴とする請求項１
乃至１１のいずれかに記載の半導体の処理方法。12. A width of the slit-shaped laser light applied to a predetermined portion of the one semiconductor region and a width of the slit-shaped laser light applied to a predetermined portion of the other semiconductor region. Claim 1 characterized by being different
12. The method for processing a semiconductor according to any one of claims to 11.
ルファスシリコン）で構成されたものであり、当該半導
体は、当該光エネルギーが照射される事によって多結晶
シリコンあるいは単結晶シリコンに変質せしめられるも
のである事を特徴とする請求項１乃至１２の何れかに記
載の半導体の処理方法。13. The semiconductor is made of amorphous silicon (amorphous silicon), and the semiconductor is transformed into polycrystalline silicon or single crystal silicon by being irradiated with the light energy. 13. The method for processing a semiconductor according to claim 1, wherein:
半導体素子の処理方法を使用して、トランジスタに於け
るソース若しくはドレイン拡散層領域を形成する事を特
徴とする半導体装置の製造方法。14. A method for manufacturing a semiconductor device, comprising forming a source or drain diffusion layer region in a transistor by using the method for processing a semiconductor element according to claim 1.
の半導体領域と、所定の不純物濃度を持つ不純物を含む
第２及び第３の半導体領域とを、該第１の半導体領域の
相接しない２つの境界に該第２の半導体領域と該第３の
半導体領域がそれぞれ接するように配置して形成する工
程と、 該第２の半導体領域と該第１の半導体領域が接する境界
領域の近傍部分に、光エネルギーを選択的に供給して該
境界領域を挟んだ所定の範囲を形成する半導体領域の半
導体を改質する工程と、 該光エネルギーの供給領域を、当該第３の半導体領域の
方向へ移動して、該第３の半導体領域と該第１の半導体
領域が接する境界領域の近傍部分に、光エネルギーを選
択的に供給して該境界領域を挟んだ所定の範囲を形成す
る半導体領域の半導体を改質する工程と、とを含む事を
特徴とする半導体装置の製造方法。15. The method according to claim 1, further comprising the steps of:
The second semiconductor region and the third and third semiconductor regions containing impurities having a predetermined impurity concentration are formed on two non-adjacent boundaries of the first semiconductor region by the second semiconductor region and the third semiconductor region. Forming a semiconductor region so as to be in contact with each other; and selectively supplying light energy to a portion near a boundary region where the second semiconductor region and the first semiconductor region are in contact with each other to form the boundary region. Modifying the semiconductor in the semiconductor region forming the sandwiched predetermined range; and moving the light energy supply region in the direction of the third semiconductor region so that the third semiconductor region and the first Selectively supplying light energy to a portion near the boundary region where the semiconductor region is in contact with the semiconductor region to reform the semiconductor in the semiconductor region forming a predetermined range sandwiching the boundary region. Manufacturing method of a semiconductor device.
の半導体領域と、高い濃度の不純物を含む第２、第３の
半導体領域とを、該第１の半導体領域の相接しない２つ
の境界に該第２の半導体領域と該第３の半導体領域がそ
れぞれ接するように配置して形成する工程と、 該第２の半導体領域に、光エネルギーを選択的に供給し
て該第２の半導体領域の半導体を改質する工程と、 該第３の半導体領域に、光エネルギーを選択的に供給し
て該第３の半導体領域の半導体を改質する工程と、 該第２の半導体領域と該第１の半導体領域が接する境界
領域の近傍に、光エネルギーを選択的に供給して該境界
領域の近傍を構成する半導体を改質する工程と、 該第３の半導体領域と該第１の半導体領域が接する境界
領域の近傍に、光エネルギーを選択的に供給して該境界
領域の近傍を構成する半導体を改質する工程とを含むこ
とを特徴とする半導体装置の製造方法。16. The method according to claim 1, further comprising the steps of:
The second semiconductor region and the third semiconductor region containing high-concentration impurities are formed on two non-adjacent boundaries of the first semiconductor region by the second semiconductor region and the third semiconductor region. A step of forming the second semiconductor region so as to be in contact therewith; a step of selectively supplying light energy to the second semiconductor region to modify a semiconductor in the second semiconductor region; and a step of forming the third semiconductor region. Modifying the semiconductor in the third semiconductor region by selectively supplying light energy; and applying light energy to the vicinity of a boundary region where the second semiconductor region and the first semiconductor region are in contact with each other. Selectively supplying and modifying a semiconductor constituting the vicinity of the boundary region; and selectively supplying light energy to the vicinity of the boundary region where the third semiconductor region and the first semiconductor region are in contact with each other. To reform the semiconductor constituting the vicinity of the boundary region And a method of manufacturing a semiconductor device.
第１の半導体を形成する成膜工程と、 不純物元素を含む気体を該基板上に供給した状態で、光
エネルギーを選択的に供給し、該第１の半導体の一部を
改質することにより、該不純物元素を含む第２の半導体
を形成する工程と、 該第２の半導体領域と該第１の半導体領域が接する境界
領域の近傍に、光エネルギーを選択的に供給して該境界
領域を含む近傍の半導体を改質することにより、第３の
半導体領域を形成する工程とを含むことを特徴とする半
導体装置の製造方法。17. A film formation step of forming a first semiconductor containing almost no impurity element on a substrate, and selectively supplying light energy while supplying a gas containing an impurity element onto the substrate. Forming a second semiconductor containing the impurity element by modifying a part of the first semiconductor; and near a boundary region where the second semiconductor region and the first semiconductor region are in contact with each other. Forming a third semiconductor region by selectively supplying light energy to modify a semiconductor in the vicinity including the boundary region.
領域が前記基板上に規則正しく配列されて形成され、前
記光エネルギーが供給される方向の領域に複数の前記第
１、或いは第２、或いは第３の半導体領域が含まれるこ
とを特徴とする請求項１５乃至１７の何れかに記載の半
導体装置の製造方法。18. A plurality of the first, second, and third semiconductor regions are formed on the substrate so as to be regularly arranged, and the plurality of first, second, and third semiconductor regions are arranged in a direction in which the light energy is supplied. The method for manufacturing a semiconductor device according to any one of claims 15 to 17, wherein a second or third semiconductor region is included.
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|---|---|---|---|
| JP15569299A JP3587083B2 (en) | 1999-06-02 | 1999-06-02 | Method for manufacturing semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15569299A JP3587083B2 (en) | 1999-06-02 | 1999-06-02 | Method for manufacturing semiconductor device |
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| Publication Number | Publication Date |
|---|---|
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| JP3587083B2 JP3587083B2 (en) | 2004-11-10 |
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