JP2000349023A - Permeable mask for projective lithography system, and mask exposure system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mask exposure system which improves the heat stability of a permeable mask for a projective lithography system, and its method. SOLUTION: This system is provided with a radiation cooling means(CL), which surrounds the light path of a molding emitted beam(EB) and also has an absorbing face for absorbing the radiated heat from a mask(MK), and a radiation shielding means(RS), and the radiation shielding means(RS) is kept at the operation temperature of the mask(MK), and the radiation shielding means(RS) is provided with an absorbing face facing the mask(MK) at a distance within a specified distance (d1), when the mask(MK) is positioned in the exposure position, and the radiation cooling means(CL) is kept at a temperature which is not more than the operation temperature, and it is provided with an absorbing face which is arranged close to the radiation shielding means(RS), on the opposite side of the mask(MK), and faces the irradiated part(RM) of the mask, when the mask(MK) is positioned in the exposure position and is irradiated with a beam.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask exposure system for a projection lithography system comprising positioning means for positioning a transmission mask at at least one predetermined exposure position across the path of a shaped beam of energy of considerable energy. Things.

The invention further comprises a transmission mask for a projection lithography system, ie at least one mask film exposed as a shaped beam of radiation of considerable energy, implemented as a wafer mask and having a stencil pattern. The present invention relates to a transmission mask in which the thickness of the mask film is sufficiently smaller than the bulk thickness of the wafer. Furthermore, the present invention relates to a method of manufacturing a transmission mask as described above from a silicon wafer having a buried layer covered by a surface silicon film layer.

[0003]

2. Description of the Related Art Lithography is one important step in processing a semiconductor substrate when manufacturing a semiconductor device. In lithography, a thin layer of a photosensitive material called photoresist is first applied to a substrate, for example, a silicon wafer. The pattern is imaged by the lithographic imaging system on the photoresist with the projection beam and one of the exposed or unexposed portions of the photoresist is removed from the substrate in a subsequent development step. The substrate is then subjected to steps such as etching, deposition (e.g., evaporation), doping, oxidation, etc., wherein the photoresist pattern on the substrate covers and protects portions of the substrate surface that should be left untreated. Stripping the photoresist leaves a substrate with a new structure. By repeating this process sequence, a multilayer structure layer is introduced, and a semiconductor microcircuit can be formed.

In projection lithography, a pattern to be imaged on a photoresist-coated substrate is created by using a mask or reticle having the desired pattern. In the projection system considered in the present invention, the pattern of the transmission mask is a thin film, that is, a thin film having a thickness of several micrometers as an appropriately shaped structure that is transparent to the electromagnetic radiation or the particle beam of the beam used for projection. Formed on top. For example, in a stencil mask, these structures are formed as holes through the membrane and the passage of the corresponding beam portion is not impeded at all. The beam is transmitted only through the mask opening,
It is shaped into a beam pattern that is projected onto the substrate. The radiation of the lithographic beam, which is mainly considered in this case, is ultra-violet (EU) having a wavelength of 10 to 14 nanometers.
V) line. It will be appreciated that, in the context of the present invention, it is easy to use other forms of radiation used in projection lithography, such as soft x-rays or particle beams (eg ions). JE Bjorkholm, et al., J. Vacuum Science and Technology Society Report No. 8 (1990) (J. Vac. Sc)
i. Technol. 1509-1 of B8 (1990)
On page 513, an EUV lithography apparatus using a transmission mask is described.

[0005] To achieve a minimum wafer throughput, the radiation of the projection beam will be of considerable energy. It will be apparent that a significant amount of radiant energy is transferred to the transmissive mask during beam irradiation, which results in heating of the mask film. In a recently developed EUV apparatus, the influence of mask heating is further deteriorated because the EUV beam is scanned over the entire surface of the mask instead of irradiating the entire mask at once. Scanning is performed by moving the mask laterally with respect to the fixed position of the incident EUV beam. The substrate is followed in a suitable manner by the mask movement. This E
The UV beam has an elongated shape that can be described as a thin rectangle slightly deformed into an arc. While the typical beam width is 6 millimeters, the beam field length is 104 millimeters, corresponding to one side of the mask pattern field. At the time of irradiation, the mask is mechanically moved (scanned) under a fixed position exposure beam.
Thus, the entire mask pattern is exposed. This irradiation method also causes an unacceptable temperature gradient across the transmissive mask, unless measures are taken. Thus, fluctuations in heating and consequent temporal and spatial changes in the stress state of the film can cause considerable distortion in the pattern structure, which is critical to image placement or image projection position reliability. Problems can also result.

[0006] In the case of EUV lithography, a common way to deal with the effects of heat at present is to use a reflective mask instead of relying on a transmissive geometry. 13.
This type of EUV lithography system using 40 nanometers of radiation has been described by CW Gwyn et al. In the Japan Society for Vacuum Science and Technology Society No. 16 (1998) (J. Vac. Sci. T
echnol. B8 (1998)) 3142-314
It is described on page 9. In this system, called ETS ("Engineering Test Stand"), the projected pattern is formed by structures formed in a highly reflective surface layer of a reflective mask. In the case of a reflective mask, the portion with the stencil structured pattern can be much thicker than the transmissive mask film, and the bulk material helps to better absorb the heat of absorption, so that the tolerance for heating can be higher. . Countermeasures against the thermal effects of irradiation are described in SE Gianoulakis and AK Ray-Chouduri (AK Ray-C).
(J. Vac. Sci. Tec) by J. Vac. Sci. Tect.
hnol. B8 (1998)), pages 3440 to 3443. In order to ensure sufficient temperature stability of the mask, cooling by heat conduction to the mask chuck is not sufficient. It has been clarified that additional measures such as taking cooling means are necessary.

[0007] EUV projection systems require the use of at least four mirrors to reflect the EUV beam several times. As a result, a high condition is required for the reflectance of the reflection surface. This is the same for the reflection mask. For example, the above ETS system geometry requires a reflectance of 68% or more.
For this purpose, a multilayer coating is used for the reflecting surface. The multilayer structure as used in these ETS mirror components and mask components is based on an 81-layer alternating Mo and Si stack with a single layer thickness of 2.8 and 4.0 nanometers, respectively. Become.
Due to the precise optical properties required of mirror components and reflective masks, the defect density in multilayer systems must be very low throughout the layer structure, which greatly increases the cost of manufacturing reflective masks. Another disadvantage of reflective masks is that not all of the illumination beam energy is used for exposing the substrate, since only about 68-79% of the incident beam is reflected.

[0008] Accordingly, the inventor has again conceived of using a transmissive geometry. For stencil masks, the situation seems even worse than for reflective mask systems. In order to stabilize a transmission mask during irradiation, U.S. Pat. No. 4,916,322 proposes a configuration in which a cooling surface is placed close to a mask exposure station and is arranged so as to surround an optical path of a beam. By placing the cooling surface within the field of view of the mask exposure station and keeping the temperature of the cooling surface below the temperature of the mask, the energy deposition on the mask by the beam can be compensated for by thermal radiation from the mask to the cooling surface. However, EUV
When used in an apparatus, this form of radiant cooling with a cooling surface is not sufficient to ensure temperature stability over the entire surface of the transmission mask film, and in particular in relation to a large temperature gradient generated in the mask during EUV beam scanning. Seems to be enough.

When a transmission mask is used in an EUV system comparable to one of the well-known EUV test transmission systems,
Temperature fluctuations are even greater than with reflective masks.
The main reason is that a transmission mask film must absorb a heat amount comparable to the absorption heat amount of an equivalent reflection mask with a thickness much smaller than that of the reflection mask. The temperature gradient created in the EUV stencil mask during scanning is quite large and is confined in the area of the mask and its surroundings. The temperature difference over the entire surface of the mask was in the range of several degrees (K) in absolute temperature. The maximum temperature of the EUV stencil mask can be controlled using a radiative cooling method as proposed in US Pat. No. 4,916,322, but the temperature gradient is so large due to the small EUV beam width. Is not expected to change.

[0010]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for thermally stabilizing a transmission mask, particularly a stencil mask, for use in a projection lithography system using a high energy radiation beam such as EUV radiation. It is in. Thermal variations should be small, even when only a portion of the mask is irradiated with the irradiation beam at a time, ie, well below 1K.

According to a first aspect of the present invention, there is provided, in a first aspect, a mask exposure system, comprising: a radiation cooling device surrounding an optical path of the beam and having an absorbing surface for absorbing thermal radiation from the mask; Means and radiation shielding means,
The radiation shield means is maintained at the operating temperature of the mask, and has an absorption surface facing the mask within a predetermined distance when the mask is positioned at the exposure position, and the radiation cooling means has an operating temperature. An absorbing surface which is maintained at the following temperature and is arranged on the opposite side of the mask from the radiation shielding means, and which is positioned at an exposure position and faces an irradiated portion of the mask when the mask is irradiated with the beam; This is achieved by a configuration characterized by having the following.

The combination of the absorbing surfaces at different temperature levels provides a significantly greater cooling effect on the illuminated portion of the transmission mask. Thus, U.S. Pat.
According to the invention based on the concept described in US Pat. No. 6,322, specific cooling is ensured for each part of the mask that is clearly defined. The radiation shield is maintained at the operating temperature of the mask to maintain a thermally stabilized state for the entire mask film. Since the radiation shield is located between the mask and the radiation cooling means, the radiation shield shields the mask from the radiation cooling means at many points. However, the radiation shield does not prevent the radiation field of the illuminated part of the mask from reaching the radiation cooling means. The radiant cooling means is maintained at a temperature sufficiently lower than the temperature of the radiation shield and thus exerts a relatively strong cooling action on the illuminated part of the mask, thus offsetting the heating effect in this area.

[0013] Preferably, the radiation cooling means and the radiation shielding means are arranged after the exposure position in the beam direction in which the reflected component of the beam need not be processed. In another embodiment of the mask exposure system according to the invention, which ensures that a large amount of thermal radiation from the mask is absorbed, the radiation shielding means is formed as a flat plate facing the exposure position and surrounding the beam path. Consisting of a radiation shield. Where appropriate, the flat plate may be provided with an opening for the beam, with the edge of the opening projecting from the plane of the plate towards the exposure position.

Similarly, in order to make the radiation cooling of the illuminated portion of the mask effective, the radiation cooling means is provided with a transmission position positioned at the exposure position with respect to a sector area of the field of view which is not covered by the radiation shield means. It is advantageous to cover most of the field of view of the illuminated portion of the mask. Here, the term "field of view" refers to the radiation emitted from the illuminated portion of the transmission mask to the surface of the mask on the side where the radiation cooling means is located when the transmission mask is positioned at the exposure position and illuminated by the beam. Shall mean place. Preferably, the radiation cooling means may be a spherical, cylindrical or conical concave absorbing surface facing the exposure location and surrounding the beam path.

In one embodiment of the present invention, the radiation shielding means comprises a radiation shield arranged parallel to the exposure position and formed as a flat plate having a first aperture slot for the beam, and the radiation cooling means. Comprises a concave absorbing surface shaped as a cylindrical segment whose axis intersects the optical path of the beam and is oriented parallel to the exposure position and the first aperture slot, the concave absorbing surface of the radiation cooling means being It has a second aperture slot for the beam and the shape of both aperture slots is to cover the radiation field of the mask as much as possible while allowing the transmitted beam (or possibly the incident beam) to pass unhindered. , Are formed to pass through the entire penetration beam at each slot position.

In a lithography system that uses an elongated cross-section beam as described above in conjunction with scanning the mask, the radiation cooling means and the radiation shielding means preferably comprise an elongated aperture slot for a beam path having, for example, a substantially rectangular elongated cross section. And the slot has a width adapted to the width of the beam cross section.

The apparatus generates a hot or thermal radiation beam when the mask is positioned at the exposure position to compensate for the area of the mask that has been "supercooled" and to spot a particular spot on the mask. It is also possible to provide a configuration having a heat radiation means directed to irradiate.

In order to achieve the above object of the present invention,
Particular preference is given to transmission masks of the type mentioned at the outset in which the mask film consists of a surface layer on the front side or on the back side exposed to the beam, for example as a highly reflective coating of a multilayer coating. This reflective coating has a high reflectivity of 50% or more and prevents absorption of most of the incident radiation, thus helping to thermally stabilize the transmission mask. For this purpose, a reflective coating is provided on the surface of the film on the side to which the irradiation beam hits. E
In contrast to the multilayer coatings used in mirror components and reflective masks in UV systems, the reflective coatings used in this case need only fulfill the requirement of high reflectivity. In the transmission type configuration, since the reflected portion of the beam is not used, the condition that the defect density is low is unnecessary.

In the transmission mask according to the present invention, it is effective to apply a low stress carbon coating to the surface of the mask film opposite to the highly reflective coating. This carbon coating acts as a high emissivity surface that radiates heat towards the radiation shield and the cooling means.

Preferably, the pattern openings are retrograde with respect to the beam direction to avoid reflection or scattering along the side walls of the illumination beam. The method for producing a transmission mask according to the invention starts with a wafer blank having a buried layer covered by a silicon film layer having a thickness of less than 10 micrometers and comprises the following steps: a) Silicon film Forming a highly reflective coating, for example a multilayer coating, on the layer by a deposition method, b) forming a hard mask layer on the wafer surface on the side where the highly reflective coating is located, c) structuring the hard mask D) structuring the highly reflective coating and the silicon film layer by etching through the interior of the hard mask structure; e) at least one preset from the bulk side of the wafer opposite the side with the highly reflective coating Etch wafer to stop layer in open window area, f) remove hard mask , Etching the stop layer in the window area.

Preferably, a further step (g) is added in order to obtain the above-mentioned carbon layer: g) a low-stress carbon layer on at least the surface of the wafer opposite to the highly reflective coating within the window area. A layer is formed by deposition to remove carbon material deposited in the openings of the (stencil) structure.

In step (d), it is effective that at least the stencil structuring of the silicon film is performed by using a reactive ion etching method for producing a retrograde etching side wall.

In order to form the window in the reverse direction in step (e), a silicon nitride layer or an oxynitride film layer is formed by deposition on the bulk side of the wafer by step (e), and at least one window is formed. A predetermined portion is structured so as not to form the silicon nitride layer or the oxynitride film layer, and at least one window in the opposite direction is formed in the portion, and in the step (f), the silicon nitride layer or the oxynitride layer is formed. The method of removing the remaining part of the film layer is preferable and preferable.

Preferably, a "silicon-on-insulator (SOI)" wafer having a silicon oxide layer covered by a surface silicon film is used as a wafer blank, and the silicon oxide layer is used as a stop layer in step (e). Use as

Another preferred embodiment of the manufacturing process utilizes a so-called "smart cut process" in which a buried layer is formed from a silicon wafer formed by irradiation with ions, for example, hydrogen ions. As a starting material; after step (a), the wafer blank is bonded to the second wafer and cleaved along the buried layer, and the subsequent steps are performed on the second wafer. In this way, the reflective layer and the silicon film layer are formed on the second wafer as in the case of the above embodiment, but the order is reversed.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings, with reference to an embodiment relating to thermal stabilization of a stencil mask used as a transmission mask in an EUV projection lithography apparatus.

[0027]

FIG. 1 shows a longitudinal section through a first embodiment of an EUV transmission device EA according to the invention. In this apparatus configuration, the EUV beam penetrates vertically through the stencil mask MK, the stencil mask is held horizontally by the mask exposure station SN, and its upper surface is irradiated by the EUV beam. This cross-section is shown along the central axis of the beam EB and is viewed in a direction parallel to the long axis of the EUV beam cross-section or, equivalently, a cooling cylinder (see below). The configuration of the illustrated EUV apparatus EA is equivalent to the configuration of an ETS apparatus such as CW Gwin, and the irradiation system IL for generating the EUV beam EB and the mask MK are positioned at appropriate positions for irradiation. A mask station SN for positioning, an optical system OP having a function of projecting a reduced image of the transmission mask pattern onto the substrate SU, and a substrate stage SS for positioning the substrate are provided. Of course, since a transmissive mask is used here, the illumination system is arranged above the mask station in the upside down direction as in the case of CW Gwin. Positioning and movement of the mask MK before and after irradiation and during irradiation are performed by the mask station S.
N. The scanning movement of the mask MK is performed in the horizontal direction as indicated by the arrow in FIG. In this figure, the position of the mask after scanning a quarter of the full scanning movement width is shown. During scanning, the mask MK is sequentially moved through a series of positions, hereinafter collectively referred to as exposure positions. On the other hand, the substrate SU is moved in a manner corresponding to the imaging characteristics or imaging characteristics of the reduction optical system OP.

According to the present invention, the mask exposure station SN has a mechanism TA for thermally stabilizing the mask. The thermal or temperature stabilization mechanism TA comprises a radiation shield RS and a cooling cylinder CL arranged at a fixed position below the mask MK with respect to the optical path of the beam EB. The purpose of this geometry is to obtain an equilibrium between the heat input of the mask resulting from irradiation with the EUV beam EB and the heat radiation leaving the mask. In the illustrated embodiment,
The thermal stabilization mechanism TA is composed of elements RS and CL, which have been found to be able to achieve sufficient thermal stabilization of the mask by themselves, so that they are arranged only below the stencil mask MK. I have. Usually this is
This would be a desirable configuration as the complicated problems associated with the reflective part of the illuminated EUV beam are avoided. However, in other embodiments, the components for thermal stabilization according to the invention can be placed on top of the mask instead of, or together with, the elements below the mask.

FIGS. 2 and 3 show the temperature stabilization mechanism TA in more detail. FIG. 2 shows a longitudinal sectional view, while FIG. 3 shows a stabilizing mechanism TA when the mask is viewed from below.
3A and 3B, and a side view (FIG. 3B) seen in a direction perpendicular to FIGS. 2 and 3A. The configuration TA includes a radiation shield means RS and a radiation cooling means CL. The radiation cooling means is hereinafter referred to as a cooling cylinder because of the shape of its inner surface in this embodiment. The temperature stabilizing elements RS, CL are
Preferably, it is fixed to the frame FR of the mask station SN. These stabilizing elements comprise a cooling conduit connected to a cooling controller (not shown) via a coolant supply line LI to maintain a temperature in a well-defined range. In FIG. 3, the attachment means of the stabilizing mechanism TA is not shown for the sake of clarity. While the radiation shield RS is kept at the operating temperature of the mask,
The cooling cylinder CL is maintained at a cooling temperature sufficiently lower than the operating temperature. To ensure sufficient heat conduction in the temperature stabilizing elements RS, CL, high thermal conductivity bulk materials are used, such as copper plated (eg TiN plating) to avoid contamination of EUV devices and substrates by diffusion. Can be

The main part of the radiation shield RS is formed, for example, as a plate RP having a rectangular dimension and having a long side running parallel to the longitudinal axis of the cross section of the EUV beam EB. In particular in FIG. 2, the two longer edges of the rectangular plate RP are reinforced and form two ridges RG provided with cooling channels. In a portion between these ridges, the radiation shield plate RP is relatively thin, for example, several tenths of a millimeter. At the center of the radiation shield part is an elongated opening SP ("first opening slot") so that the EUV beam can pass therethrough
Is provided. The shape of the opening slot SP is such that it has a shape that almost fits into a rectangle whose length is several times the width.
There is a corresponding relationship with the cross section of the UV beam EB. (The ET mentioned above
In the S-test system, the beam shape, which is usually described as "crescent", is slightly bent from a rectangular shape by only a few millimeters off the major axis of the cross section. In the following description, especially in the drawings, the cross section is treated as a rectangle. It will be appreciated that the shape of the aperture slot will be adapted to the actual shape of the EUV beam. The width ws of the first aperture slot SP is equal to or slightly larger than the beam width so that the transmitted beam is not obstructed. This is because, as is evident from the description at the beginning of this specification, the transmitted beam is used for exposing the substrate, so that the reduction of the beam energy after passing through the stencil mask must be avoided, no matter how small. It is. Similarly, the length of the aperture slot SP is the beam E
Equal to or slightly larger than the major axis of B. In a typical configuration inheriting the EUV beam specifications of the ETS system described above, the width ws of the aperture slot is 6 millimeters and the length is 104 millimeters.

As is apparent from FIG. 2, the edge of the first opening slot SP (that is, the inner edge of the radiation shield plate RP forming the slot SP) protrudes from the plane of the radiation shield plate RP toward the mask MK. In shape,
A neck portion NK surrounding the EUV beam is formed. This unique geometry ensures that the portion of the mask not illuminated by the beam is covered by the radiation shield RS with respect to the cooling cylinder located below the radiation shield. Therefore, this part is cooled by radiant cooling to the radiation shield RS rather than the cooling cylinder CL. On the other hand, the body portion of the radiation shield is provided with sufficient space for a mask mechanism having a finite height extending below the plane of the mask film MM to move during the scanning process. The field of the mask film where the stencil pattern is formed and will be imaged on the substrate is shown in FIG. 3a by cross-hatching. In the configuration shown in FIG. 1, the lower height is substantially the same as the thickness of the wafer used as the stencil mask MK because the mask is clamped to the mask frame by electrostatic action.

The radiation shield RS or, as in the case of this embodiment, the shield neck NK is kept within a distance d1 with respect to the stencil mask MK. This distance d1 and the neck height h1 of the edge RE above the plate RP are selected such that the presence of the radiation shield RS does not impede the scanning movement of the mask MK. Within this condition,
The radiation shield RS is arranged as close as possible to the mask MK. The distance d1 is 0.2 mm or less, for example,
Although it can be very small, such as 0.1 millimeter or 50 micrometers, the neck height h1 is a safety margin in the mask thickness, for example, 30%.
Is added to the size. In FIG. 1, d1 and h1 are not drawn in a fixed proportional relationship with other portions. The main purpose of the radiation shield is to stabilize the temperature of the part of the mask that is not affected by the EUV beam. for that reason,
The radiation shield is maintained at the operating temperature of the stencil mask, which is preferably "room temperature" 300K.
The transfer of heat from the mask MK to the radiation shield RS is performed by thermal radiation. To ensure optimal heat exchange, the surface of the radiation shield facing the mask MK is coated with a high emissivity absorbing coating, for example a carbon coating. In the radiation shield RS, heat transfer is performed by heat conduction and external cooling, as described above. here,
It should be noted that even within the mask, the heat transfer is less significant but not negligible compared to the radiative cooling effect.

When exchanging the mask in the EUV apparatus shown in FIG. 1, at least the vertical displacement of the height hl of the neck NK must be sufficient to obtain a sufficient space for moving the mask laterally and out of the exposure field. It is necessary to move the mask upward by an amount. Mask stations designed to allow not only lateral movement of the mask but also movement along the z-axis (an axis perpendicular to the mask) are well known to those skilled in the art,
Here, the description is omitted. Of course, the mask exchange can be performed by another method. For example, the temperature stabilizing mechanism TA may be vertically moved to a position "out of the way" of the mask. In this embodiment, the mask station need only be capable of lateral movement of the mask (a so-called xy station), and the temperature stabilizing mechanism is attached to the mask station so that it can be moved vertically.

The main purpose of the cooling cylinder CL is to
The purpose is to take measures to cool the irradiated part RM of K, ie the area of the mask MK which is momentarily irradiated by the beam EB. As is clear from FIG.
L comprises an inner surface formed as a hollow cylinder segment or, more precisely, a hollow semi-cylinder closed at both ends by substantially semi-circular sides. The inner diameter rc is
Appropriate selection is made such that the field of view of the illuminated part of the transmission mask positioned at the exposure position with respect to the sector area of the field of view not covered by the radiation shielding means is sufficiently covered. Here, the term "field of view" means that when the transmission mask is positioned at the exposure position and illuminated by the beam,
It means a radiation field radiated from the irradiated portion of the transmission mask to the surface of the mask on the side where the radiation cooling means is arranged (ie, in this case, the lower hemisphere). The inner surface of the cooling cylinder, including the inner surface of the side, is coated with an absorbent coating. The length of the cooling cylinder should be larger than the major axis of the cross section of the EUV beam. In this embodiment, 1
A cylinder length of 24 millimeters was selected. Like the radiation shield, the cooling cylinder has an elongated opening SC for the beam EB (“second opening slot”). The width of the second opening slot SC is equal to or slightly larger than the beam width for the following reason. However, as described in more detail below, the length of the opening slot SC is at least as long as the length of the first opening slot in the radiation shield RS. The cooling cylinder CL is located below the radiation shield and a short distance d from it.
2, for example, at a position of 0.1 mm. In FIG. 1, this distance is again not drawn to a constant proportion with the other parts. With this geometrical configuration, the cylinder C
The axis of L substantially coincides with the long axis of the area irradiated by the beam EB, and all surface elements of the absorption surface inside the cooling cylinder are arranged at substantially the same distance from the irradiation part RM.

Here, the shape of the inner surface does not necessarily have to be cylindrical as in the embodiment described in the present application, but may be spherical, conical or even box-shaped, for example, depending on the cross-sectional shape of the beam. Similarly, the shape of the aperture slots SP and SC may be a shape adapted to the cross section of the beam. For example, a circular beam may be formed in a circular shape.

The external dimensions of the radiation shield RS are at least the width ws of the EUV beam EB, preferably the beam width ws
Is selected to cover the mask portion around the irradiated portion RM up to a radial distance measured away from the edge of the irradiated portion. In each case, the size and shape of the radiation shield RS are selected so as to effectively block all radiation coupling between the radiation cooling means CL and the mask film, except for the irradiated part RM. The total area of the radiation shield can be the same as the total area of the mask MK (in this case, 126 mm in length) as shown in the schematic exploded perspective view of FIG. Only the absorbing surface is shown, and the distance between these elements has been greatly increased. In one embodiment, the radiation shield RS can be larger in diameter, or can have a shape that is expanded laterally along the direction of scanning movement.

The cooling cylinder CL is kept at a temperature lower than the operating temperature of the stencil mask MK by external cooling.
Finite element calculations were performed to determine the effect of changing the cooling cylinder temperature on the heat distribution on the mask, and thus on the thermal stabilization.

In this finite element simulation, the calculation was simplified by making some assumptions. First,
Scanning of the mask was ignored so that steady state analysis could be performed. This is justified if near perfect energy balance can be achieved, since the problem of knowing the heat distribution is hardly time dependent. The geometric configuration was chosen based on the specification conditions mentioned earlier.
For this simulation, it was sufficient to consider only the surface of the cooling element facing the mask. As described in detail below, the mask film is coated on the lower surface (the surface facing away from the incident beam) with a carbon layer having an emissivity of ε = 0.6 that radiates heat downward toward the cooling cylinder. Assume that The upper surface of the mask is formed of a highly reflective material whose emissivity is almost zero. Therefore, heat radiation from the top surface is ignored. The outer diameter of the mask is 300K, corresponding to the effect of chuck cooling.
Is maintained at a constant temperature. It is assumed that the emissivity ε = 1 for the radiation shield RS and the absorption surface of the cooling cylinder CL.
Calculation of radiant heat exchange is well-known law relating to heat flux q caused by thermal radiation, i.e., q = σf (εT4-ε 0 T 0
4) Performed based on the above. Where σ is the Stefan-Boltzmann constant, f is the field coefficient or field coefficient for the geometric orientation of the surface element concerned, ε is the emissivity of the cooling element, and T is the temperature. Also, the suffix 0 refers to a cooling element (pertaining to a radiation shield or a cooling cylinder, as the case may be). Radiation from only one side of each side of the cylinder was considered so that the cooling cylinder could be modeled with a shell element. The radiation shield RS maintains the radiation heat exchange action with the mask film MK and is maintained at a constant operating temperature of 300K. The absorption surface of the cooling cylinder CL has a side surface CF perpendicular to the mask MK.
And the curved surface CV of the cylinder. The cooling cylinder CL maintains a radiant heat exchange action with the irradiated portion RM of the mask and is kept at a constant temperature _TCL , hereinafter referred to as a cooling temperature. Exposure of 10.9 device wafers per hour typically requires 269 milliwatts of EUV beam energy, so the energy absorbed by the mask is such that the porosity of the stencil pattern on the top of the mask is 50%, the reflectivity of the reflective material Assuming 70%
This corresponds to 80.7 milliwatts. Therefore, the mask M
A heat flow rate q _EUV = 12.93 mW / cm 2 is supplied to a K field RM of 6 mm × 104 mm. For the silicon film of the mask MK, 150 watts / m · K
Use the thermal conductivity of

Using a finite element model of the geometry of the absorbing surface shown in FIG. 4a, calculations were obtained for a certain cooling temperature range. FIG. 4b illustrates the temperature distribution of the stencil mask film according to this geometric configuration at a cooling temperature of 246K. Also, the width of the temperature distribution of the film, ie, the difference between the minimum temperature and the maximum temperature, is shown in FIG. 5 as a function of the cooling temperature T _CL . The optimum cooling temperature at which the width of the temperature distribution is minimum is 246K, and the corresponding temperature width in the mask film is 0.283K.

As is evident from FIG. 4b, the isotherm resembles a Cassian ellipse outside the irradiated area. In the part corresponding to the irradiation part, the temperature is suppressed with respect to the surroundings by the cooling added by the cooling cylinder. In the geometry of the device shown in FIG. 4a, a cooling "overshoot" is seen near the edge of the irradiation area. Attempts have been made to optimize the geometry of the cooling cylinder in order to improve the temperature distribution. Cooling cylinder CL
In order to reduce the cooling strength at the end of the slot, the slot length was increased while keeping the width ws at 6 mm.

FIG. 6a shows a configuration in which the opening slot SC of the cooling cylinder CL extends to the edge of the curved surface CV.
In fact, compared to FIG. 4, the cooling intensity decreases near the end of the EUV beam. The optimum cooling temperature is also 246 K, and the temperature distribution of FIG. 6B is obtained. The temperature width in the film in this configuration of FIG. 6 is 0.193K.

As another mode in which it has been confirmed that the temperature width in the mask film is further reduced, as shown in FIG. 7A, an opening slot SC is formed to the middle of the side surface CF of the cooling cylinder. It is possible. For this configuration, the optimum temperature is 245K and the resulting temperature distribution is shown in FIG. 7b. The width of the temperature range in the film is 0.124K. With the geometry of this cooling mechanism, the apparatus of FIGS. 1-3 is implemented.

However, continuing to make the opening slot SC of the cooling cylinder even longer does not lead to further reduction of the maximum temperature difference. A slot extends the entire length of the side, effectively dividing the cooling cylinder into two separate
In the configuration shown in FIG. 8a, which cuts into two parts, the temperature range increases to 0.256K. In this case, the temperature distribution (FIG. 8)
b) shows that the minimum temperature range is wide in the center of the irradiation field.

The calculation of the temperature distribution described above with reference to FIGS. 4 to 8 shows that a proper cooling scheme can keep the temperature rise of the stencil mask at a suitably low level. The stabilization mechanism TA having the geometrical configuration for cooling shown in FIG.
It becomes 124K. However, the most important result of the calculations described above is that the effect near the edge of the illuminated portion RM of the mask MK is important, which is compensated for by increasing the length of the aperture slot SC with respect to the beam width. It is possible to do. In all the above geometries, the EUV beam is surrounded by a cooling cylinder CL. It should be pointed out that the term "surrounding" as used herein does not exclude the possibility that the opening extends in one or more specific directions to the outer edge of the radiation cooling means CL or the radiation shielding means RS. We should.

If, for example, the incident beam EB is pulsed at a pulse frequency of 3000 to 6000 Hertz, as is customary in the ETS system described above, the allowable energy per square unit injected into the film by one pulse is Limited by thickness (heat capacity in squares) and the allowable variation in temperature as a function of time. As a result, the pulse frequency of the beam EB should be higher than the minimum determined by the average heating intensity. Calculations have shown that for an average heating intensity of 20 mW / cm 2 and a silicon film thickness of 3 micrometers, the temperature variation as a function of time is below 0.05 K for pulse frequencies above 800 Hz. ing. Since the pulse repetition frequency in commercial EUV projection applications is considered to be well above this value, the effect of pulsed beam heating on mask temperature variations can be neglected.

In one embodiment of the present invention, one or more predetermined stencil masks are provided to compensate for the cooling surplus in the region of "overshoot" cooling that occurs at the end of the irradiated portion in the case described herein. Additional heat radiation can be supplied to the section. For example, in the geometric configuration of the apparatus of FIGS. 1 to 3, four auxiliary heat radiation beams having a predetermined size and intensity, for example, an infrared laser beam LL, are applied to a mask portion whose temperature distribution shows the lowest temperature, for example, FIG. Irradiation can be directed to the four lowest temperature points of 7b. The radiation intensity is selected to increase the temperature, for example, the temperature during the illumination field of the mask. An auxiliary beam can also be scanned along the illumination field RM, whereby the amount of heat introduced is controlled by adjusting the intensity and / or speed of the beam on the mask. The beam is, as shown in the side view of the temperature stabilizing mechanism shown in FIG.
Irradiated through C and SP. The lower surface of the stencil mask is coated with a high emissivity coating, for example, a carbon coating, which absorbs a large amount of incoming radiation,
Irradiation is preferably performed from below.

FIG. 12 illustrates a manufacturing process for manufacturing a stencil mask MK (FIGS. 12 and 13) suitable for the temperature stabilizing mechanism TA. This figure shows a longitudinal section of a wafer that is processed according to successive steps 1 to 13 of the manufacturing process. This manufacturing process uses a "silicon-on-insulator" wafer (SOI) as a base material. A similar process for manufacturing stencil masks for ion beam lithography is described in J. Butschk
e) et al., GMM Conference Proceedings "1998 Mask Technology for Integrated Circuits and Micro Components" (GM
M conference processings
"Mask Technology for Int
egrated Circuits and Micr
o-Components '98 "), VDB-Ve
rlag (Berlin), pp. 29-38 (19
GMM meeting held in Munich (Germany) on November 16 and 17, 1998). The contents of the paper in this publication are incorporated herein by reference.

The base material for the manufacturing process shown in FIG. 12 is a 675 micrometer thick SOI wafer blank (FIG. 12.1). The wafer blank WB is 3
A micrometer thick surface silicon film layer SM;
It has a buried silicon oxide film layer OX having a thickness of from 00 nm to 400 nm. A thin silicon layer SM overlying the buried oxide layer is deposited after fabrication (FIG. 12.13).
Which determines all final properties such as thickness, thermal conductivity and stress of the manufactured mask. The properties of this layer SM are therefore very important. One advantage of using an SOI wafer as the base material of the stencil mask is that it becomes an insulator layer that acts as a stop layer for the stencil trench etching step and the film etching step (see below).

A highly reflective coating ML is formed on the silicon layer SM (FIG. 12.2). This coating has a reflectivity well above 50%, which may be, for example, a Mo / Si multilayer stack of about 406 nanometers thick, but as in the case of the aforementioned EUV mirror component. It need not be of elaborate quality.
As already mentioned, the purpose of the reflective layer ML is to reflect back the part of the EUV incident beam that would otherwise be absorbed by the mask. The reflected beam does not need to meet any conditions regarding imaging quality.

In the next step (FIG. 12.3), a silicon nitride layer SN is formed by a deposition method on the back side (“bottom side”) of the wafer and is etched to form one or more windows BW. The thickness of this layer SN is usually about 20
It can be 0 nanometers. These windows, defined with the aid of the backside silicon nitride layer SN, are used as areas for etching the wafer bulk material to leave a free standing stencil film in a later film etching step (FIG. 12.11). Can be It should be pointed out here that it is not necessary to perform the window defining process steps immediately after the formation of the reflective coating. Rather, this may be done at any convenient point in the process flow prior to the film etching step.

The hard mask HM (FIG. 12.4) is formed on the reflection layer ML. The hard mask HM is formed as a stress compensation oxynitride film layer SiO _x N _y obtained by a deposition method by a PECVD process having a thickness of, for example, 1.0 μm.

Next, this hard mask HM is structured by a well-known lithography process using a photoresist layer PH (FIGS. 12.5 to 8). It is exposed (Fig. 12.5) and developed (Fig. 12.6). Resist pattern is transferred to the SiO _x N _y hard mask layer HM 'using, for example, CHF ₃ / O ₂ plasma by reactive ion etching (RIE) (FIG. 12.7). Thereafter, the resist is removed by O2 plasma (FIG. 12.8).

The next two steps (FIGS. 12.9 and 12.
In 10), the trench etching of the reflective layer ML and the silicon film layer SM is performed using a hard mask. A well-known RIE process is used for the trench etching.
The stencil structure in the silicon film SM 'is preferably shaped to be retrograde with respect to the irradiation beam in order to avoid ion scattering on the side walls during irradiation with the EUV beam. This can be done by an RIE process using SF ₆ / O ₂ agents.

After the structuring of the membrane layers ML ', SM', a membrane etching is performed (FIG. 12.11). Film etching is
The process is performed until the silicon oxide film layer OX is reached within a preset window region BW using a well-known wafer wet etching method. In the last step (FIG. 12.12), the remaining hard mask layer HM ', silicon oxide stop layer OX and silicon nitride layer SN are etched.

However, preferably, a low-stress carbon layer CB having a high emissivity is formed on the rear surface of the stencil mask MK just after the film is formed by a deposition method (FIG. 12.13), and is deposited in the stencil opening. In order to remove the carbon material, etching is performed by a selective dry etching technique (usually using oxygen reactive ion etching). As mentioned above, the carbon coating CB acts as a highly radioactive surface that promotes radiative coupling to the cooling elements RS, CL. Suitable methods for producing a low stress carbon coating CB having an absorption coefficient of 0.75 include, for example, British Patent Application No. 2
No. 325 473 A (U.S. patent application Ser. No. 08/862,
No. 770), or a nitrogen-assisted direct sputtering method (J. Vac. S.) proposed by P. Hudek and others.
ci. Technol. B Nov. / Dec. 199
7 will be published).

In order to control the internal stress of the mask film, the stress contributed by the multilayer film ML is compensated by appropriately adjusting the internal stress of the silicon film layer SM. Methods for adjusting the internal stress of a silicon layer, for example by doping, are well known from the state of the art. For example, Mo / Si
With a typical internal stress value of 330 MPa in the multilayer film SM,
Due to the compressive stress in the silicon film layer SM, a small positive value of, for example, 10 MPa (positive value means tensile stress) can be obtained as the total stress. For example, by doping silicon with arsenic, a desired amount of compressive stress can be easily obtained.

The stencil mask MK manufactured by the method described above has a highly reflective “upper surface” ML and an absorbing “back surface” CB. However, it should be noted here that, in accordance with the principles of the present invention, stencil masks without a highly reflective surface can also be used. In that case, the irradiation intensity of the EUV beam should be limited accordingly (this would reduce the throughput of the lithography system) or the cooling cylinder C
The cooling temperature of L should be reduced appropriately. Another means to enhance the effect of temperature stabilization, especially in the case of a stencil mask without a highly reflective surface, is a dual configuration in which a set of temperature stabilizing elements are placed on either side of the mask. An apparatus having a dual temperature stabilization mechanism ("double configuration") TD is shown in cross-section and side views in FIGS. 9 and 10, respectively. This configuration is a modification of the configuration shown in FIGS. Other components of the EUV system are the same as those described with reference to FIG. The duplex configuration TD includes a lower set TL and an upper set TU. The lower set TL is essentially the same as the configuration TA shown in FIG. If necessary, dimensions such as d1 and h1 can be changed according to the specifications of the mask MK 'used here. The upper set TU is the radiation shield R of the upper set.
U has no neck NK ', but is not a "mirror image" of the lower set TL in that the lower absorbing surface of the radiation shield RU is flat. This is possible because the upper surface of the stencil mask MK 'is at the same level as the wafer frame.

This embodiment may also compensate for overcooling by providing additional thermal radiation to one or more predetermined portions of the stencil mask using an auxiliary beam. As shown in FIG. 10, the beam is irradiated through the open slots of the lower and / or upper set TU, TL, each having a set of lower laser means LL and / or upper laser means LU. Irradiation can be performed from below or from above or from both sides, depending on the required heat exposure and the reflectivity of the respective surface.

The stencil mask for use in the arrangements of FIGS. 9 and 10 is described in J. Butzschke, supra.
tschke), etc. can be effectively manufactured. Here, if a mask having a carbon coating only on the “upper surface” is used, the “rear surface” has an emissivity corresponding to silicon (about 0.2 μm).
It should be noted that the effect of radiative cooling will be different since it has only 3). Therefore, if a higher emissivity is required for the back surface, a separate step for applying a carbon coating to the back surface can be added as described in FIG.

FIG. 11 illustrates another embodiment of the present invention, another embodiment of the temperature stabilization mechanism of FIGS. In this mechanism TA ', the radiation shield RS' is not provided with a neck portion. In practice, the geometry is basically the same as for the upper set TU of FIG. 9, except that this mechanism TA 'is placed below the mask and therefore has a different orientation. In order to keep the distance between the mask MI and the mechanism TA 'small, the mask MI is provided in an "inverted" shape such that the front surface of the mask is the lower surface. In this configuration, the mask is clamped to the mask frame by the electrostatic action.
Therefore, there is no extra height below, and the inversion type mask MI
Can be replaced without the need to move the mask or mechanism TA 'up and down. Otherwise, the embodiment shown in FIG. 11 is the same as the embodiment of FIG.

The inversion type mask M used in the configuration of FIG.
I preferably comprises a multilayer film in its upper surface, ie in the window area on the back of the wafer. FIG. 13 illustrates a manufacturing process for manufacturing such an inverted stencil mask MI (FIG. 12.13). This manufacturing process is described in A. Wittkova.
New Technology Boosts Chip Performance Dramatically (New Technology Boosts Ch.
ip Performance) "(Vacum S
solutions March / April 1999, 17-20
Page).
Based on the "cutting process".

In this process, a silicon wafer WO having an oxidized surface is used as a starting material, and hydrogen ions are first implanted with high energy by a smart cut process. Hydrogen ions HI are deposited in the silicon material (see FIG. 1).
3.1), stopping at a depth of a few micrometers of the silicon oxide film layer SX. These hydrogen ions give rise to a set layer HH with nuclear damage at its stop depth.

Next, the silicon oxide film layer SX is removed (FIG. 13.2) and a highly reflective coating such as a Mo / Si multilayer stack with a Si layer as top layer (FIG. 13.2). An ML is formed (FIG. 13.3).

Next, the wafer is bonded to a _second wafer also having a surface oxide layer by a Si-SiO ₂ bonding method (FIG. 13.4). The wafer bonded in this manner is cleaved along the layer affected by the nuclear damage by the smart cut process. This step consequently removes the silicon bulk of the first wafer, leaving behind the reflective coating ML and the oxide layer of the second wafer covered by the silicon layer SM. After mechanochemical polishing (MCP) of the surface caused by cleavage, the resulting wafer (FIG. 13.5) (the orientation of the wafer has changed with respect to FIG. 13.4) has the reflective layer ML and the silicon film layer interchanged. Except for this point, the wafer is equivalent to that of FIG.

In the subsequent steps of the manufacturing process, steps 3 to 12 described in FIG. 12, that is, steps such as the deposition of the silicon nitride layer SN for forming a window and the formation of a hard mask are performed in the same manner. Therefore, FIG.
3.6 corresponds to FIG. 12.12. The intermediate steps will be understood from the description in FIG. However, if it is desired to provide the carbon coating CB, it is formed on the front side of the wafer by a deposition method. The product obtained by this process is an "inverted" stencil mask MI which, when turned around as shown in FIG. 13.7, has the same layer sequence S as the stencil mask MK of FIG.
With M ', ML', and CB ', they are arranged on the lower surface of the wafer mask.

[0066]

According to the present invention, when a transmission mask is used in a projection lithography system using a high-energy radiation beam such as EUV radiation, the temperature fluctuation on the entire surface of the mask is reduced to improve the thermal stability. The drawing accuracy can be improved by a simple method.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of an EUV apparatus provided with a temperature stabilizing mechanism for a transmission mask according to the present invention.

2 is a partial sectional view of the temperature stabilizing mechanism of FIG. 1 corresponding to the longitudinal sectional view of FIG. 1;

3 shows the temperature stabilization mechanism of FIG. 1 together with a mask, FIG. 3a being a bottom view, and FIG. 3b being a side view.

FIG. 4a is an exploded perspective view of the temperature stabilizing mechanism, shown with a first embodiment of a cooling cylinder in which only the inner absorbing surface does not allow the open slot to reach the outer wall for clarity; FIG. 4b shows the temperature distribution on the mask for this mechanism during irradiation.

FIG. 5 is a graph showing the width of the temperature distribution of the mask film as a function of the temperature of the cooling cylinder.

6 shows an exploded perspective view (FIG. 6a) and a temperature distribution of the mask (FIG. 6b) of the second embodiment of the cooling cylinder in the temperature stabilizing mechanism, in which the opening slot reaches the outer wall in this embodiment. ing.

7 shows an exploded perspective view (FIG. 7a) and a temperature distribution (FIG. 7b) of a third embodiment of the cooling cylinder, similar to FIG. 4, in which the open slot extends by half the length of the outer wall; ing.

8 shows an exploded perspective view (FIG. 8a) and a temperature distribution (FIG. 8b) of a fourth embodiment of the cooling cylinder, similar to FIG. 4, in which the open slot extends the full length of the outer wall.

FIG. 9 is a sectional view of a dual-type temperature stabilizing mechanism.

FIG. 10 is a side view of the temperature stabilizing mechanism of FIG. 9;

FIG. 11 is a cross-sectional view of another temperature stabilizing mechanism for an inversion type mask.

FIG. 12 is a schematic sequence diagram illustrating a manufacturing process of the stencil mask for the temperature stabilizing mechanism of FIGS. 2 and 3;

FIG. 13 is a schematic sequence diagram illustrating a manufacturing process of the inversion type stencil mask for the temperature stabilizing mechanism of FIG. 11;

[Explanation of symbols]

 EB shaped beam MK transmission mask CL radiation cooling means RS radiation shielding means RM irradiation part d1 predetermined distance SC, SP aperture slot

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/30 531M (71) Applicant 500162107 Schreygasse 3, 1020 Wien, Austria (72) Inventor Dr. Hans Reshner Austria, 1190 Vienna, Veggasse 6 (72) Inventor Dr. Ernst Haogeneder Austria, 1210 Vienna, Siegfriedgasse 64 (72) Inventor Joseph Lutz Austria, 1060 Vienna, Vöpgasse 37/3/27

Claims (18)

[Claims] 1. A mask exposure for a projection lithography system comprising positioning means for positioning a transmission mask (MK) at at least one predetermined exposure position across a path of a shaped beam (EB) of radiation of substantial energy. In the system: comprising radiation cooling means (CL) and radiation shielding means (RS) surrounding the optical path (EB) of the beam and having an absorbing surface for absorbing thermal radiation from the mask (MK); A radiation shielding means (RS) maintained at the operating temperature of the mask, and having an absorption surface facing the mask within a predetermined distance (d1) when the mask is positioned at an exposure position; Cooling means (CL) is maintained at a temperature equal to or lower than the operating temperature, and is arranged on the side opposite to the mask and close to the radiation shielding means (RS). Mask exposure system, characterized in that has an absorption surface which faces the irradiated portion of the mask (MK) (RM) when said mask is illuminated by the beam is positioned in the exposure position. 2. The system according to claim 1, wherein said radiation cooling means (CL) and radiation shielding means (RS) are arranged after the exposure position when viewed in the direction of beam travel. 3. The radiation shield (RS) means comprises a radiation shield formed as a flat plate (RP) facing an exposure position and having an absorbing surface surrounding an optical path of the beam. 1 or 2
The system according to claim 1. 4. The flat plate (RP) has an opening for a beam, and an edge (NK) of the opening protrudes from a plane of the flat plate toward an exposure position. 4. The system of claim 3, wherein: 5. The radiation cooling means (CL) covers most of the field of view of the illuminated part (RM) of the transmission mask placed at the exposure position with respect to the sector area of the field of view not covered by the radiation shield means (RS). The system according to any one of claims 1 to 3, wherein: 6. The radiation cooling means according to claim 5, wherein said radiation cooling means comprises a spherical, cylindrical or conical concave absorbing surface facing the exposure position and surrounding the optical path of said beam. system. 7. The radiation shield means (RS) comprises a radiation shield arranged parallel to an exposure position and formed as a flat plate having a first aperture slot (SP) for the beam (EB), Radiant cooling means (C
L) comprises a concave absorbing surface shaped as a cylindrical segment whose axis intersects the optical path of the beam and is oriented parallel to the exposure position and the first aperture slot (SP); ) Has a second aperture slot (SC) for the beam (EB), the shape of both aperture slots being formed so as to allow the entire penetration beam at each slot position to pass. The system according to any one of claims 1 to 5, wherein: 8. The radiation cooling means (CL) and the radiation shielding means (RS) comprise elongate aperture slots (SC, SP) for the optical path of the beam (EB) having, for example, a substantially rectangular elongate cross section. , The slot (SC, S
7. The system according to claim 1, wherein the width (ws) of P) is a width adapted to the width of the beam cross section. 9. A thermal radiation means for generating a thermal radiation beam and directed to irradiate a specific spot on the mask when the mask is positioned at an exposure position. Item 10. The system according to Item 1. 10. A transmission mask (MK) for a projection lithography system, comprising at least one mask film exposed to a shaped beam of radiation of considerable energy, implemented as a wafer mask and having a stencil pattern. In a transmissive mask, where the thickness of the mask film is sufficiently smaller than the bulk thickness of the wafer, the mask film is formed as a highly reflective coating on the front or back surface exposed to the beam, for example, a surface layer (ML ') formed as a multilayer coating. A transmission mask, comprising: 11. A low-stress carbon coating (C) on a surface of the mask film opposite to the highly reflective coating.
11. The mask according to claim 10, wherein B) is provided. 12. The pattern opening according to claim 9, wherein the pattern opening has a retrograde shape with respect to a traveling direction of the beam.
Or the mask according to any one of 10 above. 13. A buried layer (OX, H) covered by a silicon film layer (SM) having a thickness of 10 μm or less.
In a method of manufacturing a transmission mask for a projection lithography system from a silicon wafer with H), ie exposed to a shaped radiation beam of considerable energy: a) a highly reflective coating (ML), for example a multilayer coating, on the silicon film layer Forming by a deposition method; b) forming a hard mask (HM) layer on the wafer surface on which the highly reflective coating (ML) is located; c) structuring the hard mask (HM) D) structuring the highly reflective coating (ML) and the silicon film layer (SM) by etching through the interior of the structure of the hard mask; and e) one side of the wafer with the highly reflective coating. In at least one preset window area (BW) from the opposite bulk side Etching the wafer to the stop layer (OX), f) removing the hard mask (HM '), the window area (B
Etching the stop layer (OX) in W). 14. The method according to claim 14, further comprising the step of: (g) providing a highly reflective coating (ML) on the wafer at least within the window area (BW). Forming a low stress carbon layer (CB) on the opposite surface by deposition and removing the carbon material deposited in the openings of the structure by selective dry etching. 15. The method of claim 12, wherein in step (d), at least structuring of the silicon film is performed using a reactive ion etching method that creates a retro-etched sidewall with respect to the direction of travel of the beam. Or 13
The method according to claim 1. 16. A silicon nitride layer or an oxynitride film layer (SN) is formed by deposition on the bulk side of the wafer by the step (e), wherein at least one predetermined portion is formed of the silicon nitride layer. And an oxynitride film layer (SN) is formed without being formed, at least one reverse window (BW) is formed in the portion, and in the step (f), the silicon nitride layer or the oxynitride film layer (SN) is formed. 16. The method according to any one of claims 13 to 15, wherein the remaining part of SN) is removed. 17. Use of a silicon-on-insulator wafer (WB) having a silicon oxide film layer covered by a surface silicon film as a wafer blank and using the silicon oxide film layer as a stop layer in step (e). The method according to any one of claims 13 to 16, characterized in that: 18. The method according to claim 18, wherein the wafer blank is a buried layer (H
H) is made from a silicon wafer formed by irradiation of ions, for example hydrogen ions, wherein step (a)
Subsequently bonding the wafer blank to a second wafer (W2) and cleaving along the buried layer, and performing the subsequent steps on the second wafer. The method according to claim 1.