200944959 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種包含封閉器件之微影裝置且係關於— 種使用微景> 裝置之器件製造方法。封閉器件經組態以封閉 微影裝置之光學元件的一或多個真空腔室。 本申請案主張2008年4月8曰申請且全文以引用之方式併 入本文中之美國臨時申請案61/〇71,〇〇1的權利。 【先前技術】 微影裝置為將所要圖案施加至基板上(通常施加至基板 之目標部分上)的機器。微影裝置可用於(例如)積體電路 ⑽之製造中。在該情況下’圖案化器件(其或者被稱作光 罩或主光罩）可用以產生待形成於Ic之個別層上的電路圖 案。可將此圖案轉印至基板（例如，石夕晶圓或石申化嫁晶圓） 上之目標部分(例如’包含晶粒之一部分、一個晶粒或若 干晶粒）上。圖案之轉印通常係經由成像至提供於基板上 :輪射敏感材料(抗蝴層上。一般而言，單一基板將含 ^經順次圖案化之鄰近目標部分的網路。已知微影裝置包 括·所謂的步進哭，装 標部分上來昭射 次性將整個圖案曝光至目 來照射母一目標部分；及所謂的掃描器其中藉 在給疋方向（「掃描」方向）上 同時平田輻射先束而掃描圖案 目栌邱八士士 地知描基板來照射每一 圖案化器件轉印至基板。“至基板上而將圖案自 在微影裝置中，可成像至基 4衍做的尺寸可受到投 138628.doc 200944959 影輕射之波長限制。為了產生具有更高密度之器件且因此 具有更南操作速度的積體電路，需要能夠成像更小特徵。 儘官大多數當前微影投影裝置使用由汞燈或準分子雷射所 產生之紫外光，但已提議使用為（例如）約13奈米之更短波 長輻射。該輻射被稱作遠紫外線（EUV)或軟χ射線，且可能 源包括（例如）雷射產生之電漿源、放電電漿源，或來自電 子儲存環之同步加速器輻射。 ❹ ❹ 备刚，將EUV輻射用作源之進階微影裝置的光學器件腔 室係藉由共用光學器件腔室與基板腔室之間的有限開口而 與基板腔至分離。開口可為光徑之一部分以用於將圖案化 益件上之影像投影至基板上，因為Euv輻射對大多數材料 通常為不透射的。儘管兩個腔室在操作期間均處於高真空 位準下，但通常維持光學器件腔室之壓力高於基板腔室之 因為光學器件應保持儘可能地清潔，而基板腔室通 :需要之分子污染物（例如’自抗钱劑之脫氣，及歸 因於如晶圓平台之可移動部 —A Ha I王之祖子）之來源。腔 間的壓力差產生自光學器件腔室朝向基板腔室所引導 之乳體流動，以使污染物難以 件腔室。 隹插作裝置期間進入光學器 自污染物控制觀點，可能需要在I 忠a &、， …、心像轉印（例如，曝 " 裝置執行時無論如何均完全地封閉開口，蚀^ 保持污染物遠離於光學器件。美國專汗，侍 2〇〇湖68712A1號揭示具有在非操作^請公開案第 封閉器件的該封閉機構。 …月間用於開口之 138628.doc 200944959 然而，在實際情形中，在非操作週期期間完全地封閉開 口為有問題的（特別係自生產量觀點），因為一旦開口由封 閉器件完全地封閉，則可歸因於腔室之間所維持之壓力差 而使重新敞開開口困難且費時。 【發明内容】 根據本發明之一態樣，提供一種微影裝置，微影裝置包 含：在第一腔室中之投影系統，該投影系統經組態以將影 像投影至基板上；在第二腔室中之基板台，該基板台經組 態以支撐基板，其中第一腔室與第二腔室係經由第一腔室 與第二腔室之間的開口而彼此耦接，該開口經組態以致使 氣體能夠流動於第一腔室與第二腔室之間；封閉器件，封 閉器件經組態以大體上封閉開口，其中當封閉器件已大體 上封閉開口時致使氣體仍然能夠流動於第一腔室與第二腔 室之間。 根據本發明之一態樣，提供一種微影裝置，微影裝置包 括第一腔室，第一腔室包括投影系統。投影系統經組態以 將影像投影至基板上。微影裝置亦包括第二腔室，第二腔 室包括基板台。基板台經組態以支撐基板。裝置進一步包 括在第一腔室與第二腔室之間的開口。開口經組態以致使 氣體能夠流動於第一腔室與第二腔室之間。裝置亦包括封 閉器件，封閉器件經組態以大體上封閉開口而不完全地密 封開口，使得當封閉器件已大體上封閉開口時致使氣體仍 然能夠流動於第一腔室與第二腔室之間。 根據本發明之一態樣，提供一種使用微影裝置之器件製 138628.doc 200944959 造方法。方法包括：使用在第一腔室中之投影系統而將經 圖案化輻射光束投影至基板上；及使用在第二腔室中之基 板台而支撐基板。第一腔室與第二腔室係經由開口而彼此 耦接，開口經組態以致使氣體能夠流動於第一腔室與第二 . ⑮室之間。方法亦包括：在投影之後藉由封閉器件而大體 上封閉開口，使得當封閉器件已大體上封閉開口時致使氣 體仍然能夠流動於第一腔室與第二腔室之間。 【實施方式】 ❹ 現將參看隨附示意性圖式而僅藉由實例來描述本發明之 實施例，在該等圖式中，對應參考符號指示對應部分。 圖1示意性地描繪根據本發明之一實施例的微影裝置。 裝置包3 .照明系統（照明器）IL，其經組態以調節輻射光 束B(例如，UV輻射、DUV輕射或_輕射）；支撐結構（例 如，光罩台)MT，其經建構以支撐圖案化器件(例如，光 罩）MA且連接至經組態以根據某些參數來精確地定位圖案 ® 化器件之第一定位器PM ;基板台（例如，晶圓台）WT，其 、’至建構以固持基板(例如’塗覆抗蝕劑之晶圓)W且連接至 •肋態以根據某些參數來精確地定位基板之第二定位器 pw;及投影系統（例如，折射投影透鏡系統）ps，其經組態 以將由圖案化器件MA賦予至輻射光束3之圖案投影至基板 W之目標部分c(例如，包含一或多個晶粒)上。 '、’、明系統可包括用於引導、成形或控制輕射之各種類型 的光學組件，諸如，折射、反射、磁性、電磁、靜電或其 他類型之光學组件，或其任何組合。 138628.doc 200944959 支撑結構支撑（亦即，承載）圖案化器件。支樓結構以視 圖案化器件之定向、微影裝置之設計及其他條件（諸如， 圖案化器件是否固持於真空環境中)而定的方式來固持圖 案化益件。支撐結構可使用機械、真空、靜電或其他爽持 技術來固持圖案化器件。支撐結構可為（例如）框架或台i 其可根據需要而為固定或可移動的。支撐結構可確保圖案 化器件（例如）相對於投影系統而處於所要位 ^ 文對術語「主光罩4「光罩」之任何使料與更2^ 術語「圖案化器件」同義。 本文所使用之術語「圖案化器件」應被廣泛地解釋為指 代可用以在輻射光束之橫截面中向輻射光束賦予圖案以便 在基板之目標部分中形成圖案的任何器件。應注意，例 如，若被賦予至輻射光束之圖案包括相移特徵或所謂的輔 助特徵，則圖案可能不會精確地對應於基板之目標部分中 的所要圖案。通常’被賦予至輻射光束之圖案將對應於目 標部分中所形成之器件（諸如，積體電路）中的特定功能 層。 圖案化器件可為透射或反射的。圖案化器件之實例包括 光罩、可程式化鏡面陣列，及可程式化LCD面板。光罩在 微影術中為熟知的’且包括諸如二元交變相移及衰減相移 之光罩類型，以及各種混合光罩類型。可程式化鏡面陣列 之一實例使用小鏡面之矩陣配置，該等小鏡面中之每一者 可個別地傾斜’以便在不同方向上反射入射輻射光束。傾 斜鏡面將圖案賦予於由鏡面矩陣所反射之輻射光束中。 138628.doc 200944959 本文所使用之術語「投m應被廣泛地解釋為涵蓋 任何類型之投影系統，包括折射、反射、反射折射、磁 !·生電磁及靜電光學系統或其任何組合，其適合於所使用 之曝光輻射’或適合於諸如浸沒液體之使用或真空之使用 ㈣他因素。可認為本文對術語「投影透鏡」之任何使用 均與更通用之術語「投影系統」同義。 如此處所描繪，裝置為反射類型（例如，使用反射光 φ 罩）。或者，裝置可為透射類型（例如’使用透射光罩）。 Μ影裝置可為具有兩個（雙平台）或兩個以上基板台（及/ 或兩個或兩個以上光罩台）的類型。在該等「多平台」機 器中叮並行地使用額外台，或可在一或多個台上進行預 備步驟，同時將一或多個其他台用於曝光。 微影裝置亦可為如下類型：其中基板之至少一部分可由 具有相對較高折射率之液體（例如，水）覆蓋，以便填充投 影系統與基板之間的空間。亦可將浸沒液體施加至微影裝 ® 置中之其他空間，例如，光罩與投影系統之間。浸沒技術 在此項技術中被熟知用於增加投影系統之數值孔徑。如本 .文所使用之術語「浸沒」不意謂諸如基板之結構必須浸潰 於液體中，而是僅意謂液體在曝光期間位於投影系統與基 板之間。 參看圖1，照明器IL自輻射源SO接收輻射光束。舉例而 吕’當輻射源為準分子雷射時，輻射源舆微影裝置可為單 獨實體。在該等情況下’不認為輻射源形成微影裝置之一 部分，且輻射光束借助於包含（例如）適當引導鏡面及/或光 138628.doc 200944959 束放大器之光束傳送系統而自輻射源SQ傳遞至照明器江。 在其他情況下，例如I ^射源為汞燈時，輻射源可為微 〜裝置之整體部分C輻射源80及照明器^連同光束傳送系 統（在使用時）可被稱作輻射系統。 明器IL可包含用於調整輻射光束之角強度分布的調整 器通㊉，可調整照明器之瞳孔平面中之強度分布的至少 外部徑向範圍及/或内部徑向範圍（通常分別被稱作σ外部 及σ内部）。此外，照明訊可包含各種其他組件，諸如’ 積光器及聚光器。照明器可用以調節輻射光束，以在其橫 截面中具有所要均一性及強度分布。 輻射光束Β入射於被固持於支撐結構（例如，光罩台Μ 丁） 上之圖案化器件（例如，光罩ΜΑ)上，且由圖案化器件圖案 化。在橫穿光罩ΜΑ後，輻射光束Β穿過投影系統ps，投影 系統ps將光束聚焦至基板w之目標部分c上。借助於第二 定位器PW及位置感測器IF2(例如，干涉量測器件、線性編 碼器或電容性感測器）’基板台WT可精確地移動，例如， 以便在輻射光束B之路徑中定位不同目標部分c。類似 地，第一定位器PM及另一位置感測器卩丨可用以（例如）在 自光罩庫之機械擷取之後或在掃描期間相對於輻射光束B 之路徑來精確地定位光罩MA。一般而言，可借助於形成 第—定位器PM之一部分的長衝程模組（粗略定位）及短衝程 模組（精細定位）來實現光罩台MT之移動。類似地，可使用 形成第二定位器PW之一部分的長衝程模組及短衝程模組 來實現基板台WT之移動。在步進器（與掃描器相對）之情況 138628.doc •10- 200944959 下，光罩台MT可僅連接至短衝程致動器，或可為固定 的。可使用光罩對準標記ΜΙ、M2及基板對準標記以、ρ2 來對準光罩Μ A及基板W。儘管如所說明之基板對準標記 佔用專用目標部分，但其可位於目標部分之間的空間中 (此等被稱為切割道對準標記）。類似地，在一個以上晶粒 提供於光罩MA上之情形中，光罩對準標記可位於該等晶 粒之間。 ❹ 所描繪裝置可用於以下模式中之至少一者中： 1. 在步進模式中，在將被賦予至輻射光束之整個圖案一 次性投影至目標部分C上時，使光罩台河丁及基板台贸丁保BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lithography apparatus including a closed device and to a device manufacturing method using a micro-view device. The enclosure is configured to enclose one or more vacuum chambers of the optical components of the lithography apparatus. The present application claims the benefit of U.S. Provisional Application Serial No. 61/61, the entire disclosure of which is incorporated herein by reference. [Prior Art] A lithography apparatus is a machine that applies a desired pattern onto a substrate (usually applied to a target portion of the substrate). The lithography apparatus can be used, for example, in the manufacture of integrated circuits (10). In this case, a patterned device (which may be referred to as a reticle or main reticle) may be used to create a circuit pattern to be formed on individual layers of Ic. This pattern can be transferred to a target portion (e.g., including a portion of a die, a die or a plurality of dies) on a substrate (e.g., a Shihua wafer or a Shihua wafer). Transfer of the pattern is typically via imaging to a substrate that is provided on a substrate: a reflective material (in general, a single substrate will contain a network of adjacent target portions sequentially patterned). Known lithography devices Including the so-called stepping crying, the labeling part is applied to expose the entire pattern to the target to illuminate the target part of the mother; and the so-called scanner uses the simultaneous radiation in the direction of the ( ("scanning" direction) Scanning the pattern and scanning the pattern to reveal the substrate to illuminate each patterned device to be transferred to the substrate. "To the substrate, the pattern can be imaged to the base 4 in the self-image lithography device. Due to the wavelength limitation of 138628.doc 200944959, it is necessary to be able to image smaller features in order to produce a higher density device and therefore a souther operating speed. Most of the current lithography projection devices are used. Ultraviolet light produced by mercury lamps or excimer lasers, but has been proposed to use, for example, shorter wavelength radiation of about 13 nm. This radiation is called far ultraviolet (EUV) or soft jet. And possible sources include, for example, laser generated plasma sources, discharge plasma sources, or synchrotron radiation from an electronic storage ring. ❹ 备 刚 ,, EUV radiation used as the source of advanced lithography The device chamber is separated from the substrate cavity by a limited opening between the shared optics chamber and the substrate chamber. The opening may be part of the optical path for projecting an image on the patterned benefit onto the substrate, Because Euv radiation is generally not transmissive to most materials. Although both chambers are at high vacuum levels during operation, the pressure in the optics chamber is typically maintained higher than the substrate chamber because the optics should remain Probably clean, while the substrate chamber passes: the source of the required molecular contaminants (such as 'degassing from the anti-money agent, and due to the movable part of the wafer platform - the ancestors of A Ha I Wang). The pressure difference is generated from the flow of the emulsion guided by the optics chamber toward the substrate chamber to make the contaminants difficult to chamber. During the insertion of the device into the optics from the point of view of contaminant control, it may be necessary I loyal a &,, ..., cardiographic transfer (for example, exposure), the device completely closes the opening anyway, eclipses to keep the contaminants away from the optics. American sweat, servant 2 〇〇 Lake 68712A1 Disclosed is the closure mechanism having the closure device in the non-operating open case. ... 138628.doc 200944959 for the opening of the month. However, in the actual case, completely closing the opening during the non-operational period is problematic (especially From the viewpoint of throughput, since once the opening is completely closed by the closing means, it is difficult and time consuming to reopen the opening due to the pressure difference maintained between the chambers. [Invention] According to one aspect of the present invention, Providing a lithography apparatus, the lithography apparatus comprising: a projection system in a first chamber configured to project an image onto a substrate; a substrate stage in the second chamber, the substrate set Supporting the substrate, wherein the first chamber and the second chamber are coupled to each other via an opening between the first chamber and the second chamber, the opening being configured to enable gas to Moving between the first chamber and the second chamber; closing the device, the closure device being configured to substantially close the opening, wherein the gas is still able to flow through the first chamber and the first portion when the closure device has substantially closed the opening Between the two chambers. According to one aspect of the invention, a lithography apparatus is provided, the lithography apparatus including a first chamber, the first chamber including a projection system. The projection system is configured to project an image onto the substrate. The lithography apparatus also includes a second chamber, the second chamber including a substrate stage. The substrate stage is configured to support the substrate. The device further includes an opening between the first chamber and the second chamber. The opening is configured to cause gas to flow between the first chamber and the second chamber. The device also includes a closure device configured to substantially close the opening without completely sealing the opening such that when the closure device has substantially closed the opening, the gas is still able to flow between the first chamber and the second chamber . According to one aspect of the present invention, a method of fabricating a device using a lithography apparatus 138628.doc 200944959 is provided. The method includes projecting a patterned beam of radiation onto a substrate using a projection system in the first chamber; and supporting the substrate using a substrate stage in the second chamber. The first chamber and the second chamber are coupled to each other via an opening configured to enable gas to flow between the first chamber and the second chamber. The method also includes substantially closing the opening by the closure means after projection such that when the closure member has substantially closed the opening, the gas is still able to flow between the first chamber and the second chamber. [Embodiment] The embodiments of the present invention will be described by way of example only with reference to the accompanying drawings, in which FIG. 1 schematically depicts a lithography apparatus in accordance with an embodiment of the present invention. Device package 3. A lighting system (illuminator) IL configured to adjust a radiation beam B (eg, UV radiation, DUV light or light); a support structure (eg, a reticle stage) MT, constructed To support a patterned device (eg, reticle) MA and to a first locator PM configured to accurately position a patterning device according to certain parameters; a substrate table (eg, wafer table) WT, 'to a second locator pw that is configured to hold a substrate (eg, 'pad for resisting) W and is connected to the rib state to accurately position the substrate according to certain parameters; and a projection system (eg, refraction) A projection lens system) ps is configured to project a pattern imparted by the patterned device MA to the radiation beam 3 onto a target portion c of the substrate W (eg, comprising one or more dies). The ', ', and bright systems may include various types of optical components for directing, shaping, or controlling light, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof. 138628.doc 200944959 Support structure supports (ie, carries) patterned devices. The slab structure holds the avatar in a manner that depends on the orientation of the patterned device, the design of the lithography device, and other conditions, such as whether the patterned device is held in a vacuum environment. The support structure can hold the patterned device using mechanical, vacuum, electrostatic or other cooling techniques. The support structure can be, for example, a frame or table i that can be fixed or movable as desired. The support structure ensures that the patterned device, for example, is in the desired position relative to the projection system. Any reference to the term "main mask 4 "mask" is synonymous with the term "patterned device". The term "patterned device" as used herein shall be interpreted broadly to refer to any device that can be used to impart a pattern to a radiation beam in a cross-section of a radiation beam to form a pattern in a target portion of the substrate. It should be noted that, for example, if the pattern imparted to the radiation beam includes a phase shifting feature or a so-called auxiliary feature, the pattern may not exactly correspond to the desired pattern in the target portion of the substrate. Typically, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device (such as an integrated circuit) formed in the target portion. The patterned device can be transmissive or reflective. Examples of patterned devices include photomasks, programmable mirror arrays, and programmable LCD panels. Photomasks are well known in lithography and include reticle types such as binary alternating phase shift and attenuated phase shift, as well as various hybrid reticle types. One example of a programmable mirror array uses a matrix configuration of small mirrors, each of which can be individually tilted' to reflect the incident radiation beam in different directions. The oblique mirror imparts a pattern to the radiation beam reflected by the mirror matrix. 138628.doc 200944959 The term "casting m" as used herein shall be interpreted broadly to cover any type of projection system, including refraction, reflection, catadioptric, magnetic! electromagnetic and electrostatic optical systems, or any combination thereof, suitable for The exposure radiation used is either suitable for use such as immersion liquid or vacuum (4). Any use of the term "projection lens" herein is considered synonymous with the more general term "projection system". As depicted herein, the device is of the reflective type (eg, using a reflected light φ mask). Alternatively, the device can be of the transmissive type (e.g., using a transmissive reticle). The photographic device can be of the type having two (dual platforms) or more than two substrate stages (and/or two or more reticle stages). In such "multi-platform" machines, additional stations are used in parallel, or steps can be prepared on one or more stations while one or more other stations are used for exposure. The lithography apparatus can also be of the type wherein at least a portion of the substrate can be covered by a liquid having a relatively high refractive index (e.g., water) to fill the space between the projection system and the substrate. The immersion liquid can also be applied to other spaces in the lithography unit, for example, between the reticle and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of a projection system. The term "immersion" as used herein does not mean that the structure, such as the substrate, must be impregnated into the liquid, but rather only means that the liquid is between the projection system and the substrate during exposure. Referring to Figure 1, illuminator IL receives a radiation beam from radiation source SO. For example, when the radiation source is an excimer laser, the radiation source 舆 lithography device can be a separate entity. In such cases 'the radiation source is not considered to form part of the lithography device and the radiation beam is transmitted from the radiation source SQ to the beam delivery system comprising, for example, a suitable guiding mirror and/or light 138628.doc 200944959 beam amplifier Illuminator River. In other cases, such as when the I source is a mercury lamp, the source of radiation may be an integral portion of the device. The source of radiation 80 and the illuminator together with the beam delivery system (when used) may be referred to as a radiation system. The illuminator IL can include an adjuster for adjusting the angular intensity distribution of the radiation beam, the at least outer radial extent and/or the inner radial extent of the intensity distribution in the pupil plane of the illuminator can be adjusted (generally referred to as σ outside and σ inside). In addition, the illumination can include a variety of other components, such as 'films and concentrators. The illuminator can be used to adjust the radiation beam to have a desired uniformity and intensity distribution in its cross section. The radiation beam is incident on a patterned device (e.g., a reticle) that is held on a support structure (e.g., a reticle stage) and patterned by the patterned device. After traversing the reticle, the radiation beam Β passes through the projection system ps, and the projection system ps focuses the beam onto the target portion c of the substrate w. By means of the second positioner PW and the position sensor IF2 (for example, an interference measuring device, a linear encoder or a capacitive sensor), the substrate table WT can be accurately moved, for example, to be positioned in the path of the radiation beam B. Different target parts c. Similarly, the first positioner PM and the other position sensor 卩丨 can be used to accurately position the reticle MA, for example, after a mechanical extraction from the reticle library or during the scan relative to the path of the radiation beam B. . In general, the movement of the reticle stage MT can be achieved by means of a long stroke module (rough positioning) and a short stroke module (fine positioning) forming part of the first positioner PM. Similarly, the movement of the substrate table WT can be accomplished using a long stroke module and a short stroke module that form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) 138628.doc •10- 200944959, the reticle stage MT can be connected only to short-stroke actuators or can be fixed. The mask Μ A and the substrate W can be aligned using reticle alignment marks M, M2 and substrate alignment marks ρ2. Although the substrate alignment marks occupy a dedicated target portion as illustrated, they may be located in the space between the target portions (this is referred to as a scribe line alignment mark). Similarly, in the case where more than one die is provided on the reticle MA, a reticle alignment mark may be located between the granules. ❹ The device depicted can be used in at least one of the following modes: 1. In the step mode, when the entire pattern to be applied to the radiation beam is projected onto the target portion C at a time, the mask is placed and Substrate
持基本上靜止（亦即，單重靜態曝光）。接著，使基板台WT 在X及/或Y方向上移位，使得可曝光不同目標部分C。在 步進模式中，曝光場之最大尺寸限制單重靜態曝光中所成 像之目標部分c的尺寸。 2. 在掃描模式中，在將被賦予至輻射光束之圖案投影至 © 目標部分C上時，同步地掃描光罩台MT及基板台霣丁（亦 即，單重動態曝光）。可藉由投影系統以之放大率（縮小率） 及〜像反轉特性來判定基板台WT相對於光罩台MT之速度 及方向。在掃描模式中，曝光場之最大尺寸限制單重動態 曝光中之目標部分的寬度（在非掃描方向上），而掃描運動 之長度判定目標部分之高度（在掃描方向上）。 3. 在另一模式中，在將被賦予至輻射光束之圖案投影至 目標部分C上時，使光罩台M丁保持基本上靜止，從而固持 可程式化圖案化器件，且移動或掃描基板台wT。在此模 138628.doc 200944959 式中通常使用脈衝式輻射源，且在基板台|丁之每一移 動之後或在掃的順次轄射脈衝之間根據需要而更新 可程式化圖奢IL· m »Λ 益件。此操作模式可易於應用於利用可程 式匕圖案化益件(；諸如，如以上所提及之類型的可程式化 鏡面陣列）之無光罩微影術。 亦可使用對以上所描述之使用模式之組合及，或變化或 完全不同的使用模式。 在操作微影裝置（亦即，曝光塗覆有抗钱劑之目標部分） 的過程中，存在至少以下操作模式： 1·曝光模式；其可經界定為基板(其上塗覆有抗蝕劑)由 輻射曝光時之週期。 2·步進模式，其可經界定為完成目標部分之曝光盥開 始待曝光之後續目標部分之下一曝光之間的週期。在；進 換式期間’基板台WT或基板支撐件自—目標移動至另一 目標。步進模式為「非曝光週期」之子模式。 3· 土板交換模式；其可經界定為_基板自基板台或逢Basically stationary (ie, single static exposure). Next, the substrate stage WT is displaced in the X and/or Y direction so that different target portions C can be exposed. In the step mode, the maximum size of the exposure field limits the size of the target portion c of the image formed in the single static exposure. 2. In the scan mode, when the pattern to be applied to the radiation beam is projected onto the © target portion C, the mask table MT and the substrate stage (i.e., single-height dynamic exposure) are simultaneously scanned. The speed and direction of the substrate stage WT relative to the mask table MT can be determined by the projection system using the magnification (reduction ratio) and the image inversion characteristic. In the scan mode, the maximum size of the exposure field limits the width of the target portion in the single-weight dynamic exposure (in the non-scanning direction), and the length of the scanning motion determines the height of the target portion (in the scanning direction). 3. In another mode, the mask stage M is held substantially stationary while the pattern to be imparted to the radiation beam is projected onto the target portion C, thereby holding the programmable patterning device and moving or scanning the substrate Taiwan wT. In this model 138628.doc 200944959, a pulsed radiation source is typically used, and the programmable map luxury IL·m is updated as needed between each movement of the substrate stage or between successive pulses of the sweep. Λ Benefits. This mode of operation can be readily applied to matte lithography using a programmable 匕 patterning benefit (such as a programmable mirror array of the type mentioned above). Combinations of the modes of use described above, and variations or completely different modes of use may also be used. In operating the lithography apparatus (i.e., exposing the target portion coated with the anti-money agent), there are at least the following modes of operation: 1. Exposure mode; which may be defined as a substrate (on which is coated with a resist) The period when exposed by radiation. 2. A step mode, which can be defined as the period between the exposure of the target portion and the exposure of the subsequent target portion of the target to be exposed. During the conversion process, the substrate stage WT or the substrate support moves from the target to the other target. The step mode is the sub mode of "non-exposure period". 3· earth plate exchange mode; it can be defined as _substrate from substrate table or every
板支撑件移除（卸载）且另—基板轉移（裝載）至基板台或J 板支撐件上時之週期。基板交 板乂換模式為「非曝光週期」之 千棋式。 4.調換模式可僅針對具有兩個(雙平台)或 台或基板支料（及/或兩個或兩個U㈣= 们之微影裝置類型而存在。調換模式可經界定為—基板 台或基板支料與或基板切件調 料 之週期。調換模式為「非曝光週期」之子模式。 時 • J2· 138628.doc 200944959 圖2示意性地描繪根據本發明之—非限制性實施例的微 影裝置。圖2中展不光學器件（例如，投影系統ps)之腔室 1〇(例如，真空腔室）及基板台或基板支撐件界1之腔室 20(例如，真空腔室），以便說明腔室1〇、2〇之間的共用開 口 30的非限制性觀念。開口 3〇可為所謂的動態氣鎖 (DGL)，其中維持氣體流動以防止污染物行進穿過開口 . 30 ° ❹用於DGL中之氣體應為大體上不吸收投影光束（例如， EUV)中之輻射同時針對污染物具有大體上低擴散係數的 物質。已用於動態氣鎖中之該等氣體的實例為H、^及 Kr。使用諸如Ar之氣體的DGL描述於美國專利第6，198,792 B1號中’該專利描述將投影系統區域與基板區域分離之隔 膜中之孔。隔膜中之孔允許經投影韓射撞擊於基板上。惰 性氣體跨越輻射光束之透射方向而流動。 ”陳描述於美國專利第6,683,936 B2號及第M42,996 B2 ❹ 號以及歐洲專利申請公開案第0 532 968 A1號中，DGL描 述在與經投影輻射相同之方向上行進之流動’ DGL進-步 H㈣X㈣射透射穿過之隔膜或視窗。此等後者文件之 引導惰性氣體的中空管可為圓錐形，且在其頂部末端處由 隔膜覆蓋，輻射在撞擊於基板上之前行進穿過隔膜。隔膜 防止惰性氣體朝向投影系統向上流動。 在圖2中光學器件之第-腔室10含有投影系統PS，而 基板台之第二腔含9〇人士甘1 , 股至20含有基板台WTe第一腔室1〇盥 腔室20係經由共用開口 3〇(dgl)而彼此麵接。”— 138628.doc -13· 200944959 投影系統ps可由反射光學器件（例如，鏡面）組成，其中 以原子能階而控制表面平坦度。此等光學器件可在小粒子 進入第一腔室10且變得附著於光學器件之表面上的情況下 易被損害。 因此，儘管兩個腔室1 〇、20在操作期間均處於高真空位 準下，但通常維持光學器件之第一腔室1〇之壓力高於基板 台之第二腔室20之壓力。此係因為應保持光學器件儘可能 地清潔，而基板台之第二腔室20通常係不需要之分子污染 物（例如，自抗蝕劑之脫氣、歸因於如晶圓平台之可移動❹ 部分而產生之粒子）之來源。實務上，可藉由某一氣體（例 如，氫、氮、氦或二氧化碳）而淨化第一腔室1〇(但腔室壓 力極低）以保持投影系統1>8之光學元件清潔。 腔室10、20之間的壓力差產生自光學器件之第一腔室1〇 朝向基板台之第二腔室20所引導的氣體流動（圖中未展 示），以便防止污染物在操作裝置期間進入光學器件之第 一腔室10。 圖3a、圖3b及圖3c示意性地描繪圖】之微影裝置的非限〇 制性實施例。 在圖3a所不之曝光模式中，基板台WT定位於開口 3 O(DGL)下方。在此曝光模式中，污染物自基板台之第二 · 腔室20至光學器件之第一腔室⑺中的行進距離相對較長 (如以虛線箭頭所示）。因此，基板台之第二腔室20中之污 染物將進入光學器狀第的可能性為T忽視地 小，因為在污染物之行進距離與該污染物進入投影系統Μ 138628.doc 14 200944959 之第一腔室l 〇之可能性之間存在相關。 當進行曝光且基板台WT離開開口 3 〇(DGL)下方之位置 (例如）以交換基板（如圖3b所示）時，基板台之第二腔室20 中之污染物的行進距離（如以虛線箭頭所示）將自圖3 a所示 之行進距離縮短。因此，使光學器件之第一腔室1〇受污染 之可能性將在非曝光週期期間由於基板台WT之位置（例 如，調換模式、基板交換模式）而變得顯著地更高。The period during which the panel support is removed (unloaded) and the other substrate is transferred (loaded) onto the substrate table or J-plate support. The substrate exchange mode is a "non-exposure cycle". 4. The swap mode may only exist for lithographic device types having two (dual-platform) or stage or substrate stock (and/or two or two U(four)=. The swap mode may be defined as a substrate stage or The period of the substrate material and the substrate cutting material is adjusted. The switching mode is a sub-mode of "non-exposure period". J2 138628.doc 200944959 FIG. 2 schematically depicts a lithography according to a non-limiting embodiment of the present invention. Apparatus. Figure 2 shows a chamber 1 (e.g., a vacuum chamber) of an optical device (e.g., projection system ps) and a chamber 20 (e.g., a vacuum chamber) of the substrate stage or substrate support 1 so that A non-limiting concept of a common opening 30 between the chambers 1〇, 2〇 is illustrated. The opening 3〇 may be a so-called dynamic air lock (DGL) in which gas flow is maintained to prevent contaminants from traveling through the opening. 30 ° ❹ The gas used in the DGL should be a substance that does not substantially absorb the radiation in the projected beam (e.g., EUV) while having a substantially low diffusion coefficient for the contaminant. An example of such a gas that has been used in dynamic air locks is H. , ^ and Kr. Use a gas such as Ar The DGL is described in U.S. Patent No. 6,198,792 B1, which describes a hole in a membrane separating a region of the projection system from the substrate region. The aperture in the diaphragm allows the projection of the Han to impinge on the substrate. The inert gas crosses the radiation beam. The flow is in the direction of transmission. "Chen is described in U.S. Patent Nos. 6,683,936 B2 and M42,996 B2, and European Patent Application Publication No. 0 532 968 A1, the DGL is described in the same direction as the projected radiation. The flow 'DGL into-step H (four) X (four) is transmitted through the diaphragm or window. The hollow tube guiding the inert gas in the latter document can be conical and covered by a diaphragm at the top end thereof, and the radiation impinges on the substrate. Before proceeding through the diaphragm, the diaphragm prevents the inert gas from flowing upward toward the projection system. In Fig. 2, the first chamber 10 of the optical device contains the projection system PS, and the second chamber of the substrate table contains 9 people, 1 to 20 The first chamber 1 including the substrate table WTe is overlapped with each other via a common opening 3 (dgl)." - 138628.doc -13· 200944959 Projection system ps can be reflected optics A component (eg, a mirror) consisting of controlling the surface flatness with atomic energy levels. Such optics can be easily damaged in the event that small particles enter the first chamber 10 and become attached to the surface of the optical device. Although the two chambers 1 and 20 are at a high vacuum level during operation, the pressure of the first chamber 1〇 of the optical device is generally maintained higher than the pressure of the second chamber 20 of the substrate stage. Because the optics should be kept as clean as possible, the second chamber 20 of the substrate stage is typically unwanted molecular contaminants (eg, degassing from the resist, due to the movable portion of the wafer platform) And the source of the resulting particles). In practice, the first chamber 1 (but the chamber pressure is very low) can be purged by a gas (e.g., hydrogen, nitrogen, helium or carbon dioxide) to keep the optical components of the projection system 1 > 8 clean. The pressure difference between the chambers 10, 20 is generated from the flow of gas (not shown) directed from the first chamber 1 of the optics toward the second chamber 20 of the substrate table to prevent contaminants during operation of the device Entering the first chamber 10 of the optical device. 3a, 3b, and 3c schematically depict non-limiting embodiments of the lithography apparatus of the drawings. In the exposure mode not shown in Figure 3a, the substrate table WT is positioned below the opening 3 O (DGL). In this exposure mode, the distance traveled by contaminants from the second chamber 20 of the substrate stage to the first chamber (7) of the optics is relatively long (as indicated by the dashed arrows). Therefore, the possibility that the contaminants in the second chamber 20 of the substrate stage will enter the optics-like state is negligibly small because the distance traveled by the contaminants and the contaminants enter the projection system Μ 138628.doc 14 200944959 There is a correlation between the possibilities of the first chamber. The distance traveled by the contaminants in the second chamber 20 of the substrate table when exposure is performed and the substrate table WT leaves the position below the opening 3 〇 (DGL), for example, to exchange the substrate (as shown in FIG. 3b) The dotted arrow shows that the travel distance shown in Figure 3a is shortened. Therefore, the possibility of contaminating the first chamber 1 of the optical device will become significantly higher during the non-exposure period due to the position of the substrate table WT (e.g., the exchange mode, the substrate exchange mode).
_ 為了降低歸因於縮短污染物之行進距離而在基板台WT 不位於開口 30下方時污染物進入第一腔室1〇之可能性，可 將封閉益件40應用於開口 3〇(如圖3c所示）。移動至開口 3〇(DGL)下方之位置中的封閉器件4〇增加污染物之行進距 離。在一實施例中’封閉器件4〇應不完全地封閉開口 30(DGL)，因為共用開口 3〇(DGL)之封閉的完成可歸因於 腔室10、20之間的壓力差（其可導致封閉器件4〇「強力地 黏著」至分離腔室1〇、2〇之壁）而導致生產量損失。 Ο 若元全地封閉開口3 0，則第一腔室1 〇之壓力將歸因於經 淨化氣體而增加，同時使第二腔室20維持在低壓力下。接 • 著，若在此情境下敞開封閉器件4〇，則將歸因於腔室1〇、 . 2〇之間的大壓力差而產生強氣體流，且氣體流將有力地攪 起第一腔室20中之污染物。該效應可甚至使第—腔室比 在無封閉器件40的情況下辦。 圖4示意性地描繪根據本發明之一非限制性實施例的微 影裝置。在此實施例中，參看圖3c所論述之封閉器件不 位於開口 30「下方」而位於開口 3〇「内部」。在—實施例 138628.doc •15- 200944959 上'方」（圖中未展示）以達成相 中，封閉器件40可在開 同效應。 此實施例可為有益的，因幺 u為無需用於封閉器件40之機構 的額外空間。在典型微影奘 〜恶·置中，開口 40至基板台WT之 頂部表面之間的距離為大的 5穴、—毫米。因此，製造用於該封 閉器件之空間可形成挑鸫， ^ ^ 此可猎由此方法而加以解決。 圖5示意性地描緣根櫨太 很據本發明之一非限制性實施例的微 影裝置。在此實施例中，細^ Ύ Α組態以封閉開口 30(DGL)同時In order to reduce the possibility of contaminants entering the first chamber 1 when the substrate table WT is not under the opening 30 due to the shortening of the travel distance of the contaminants, the closure benefit 40 can be applied to the opening 3 (as shown in the figure) 3c)). The closing means 4, which moves into the position below the opening 3 (DGL), increases the travel distance of the contaminants. In one embodiment, the 'closed device 4' should not completely close the opening 30 (DGL) because the completion of the closure of the common opening 3 (DGL) can be attributed to the pressure difference between the chambers 10, 20 (which can This results in a loss of throughput due to the "strong adhesion" of the closure device 4 to the walls of the separation chambers 1〇, 2〇. Ο If the element completely closes the opening 30, the pressure of the first chamber 1 将 will be increased due to the purge gas while maintaining the second chamber 20 at a low pressure. In addition, if the closed device 4 is opened in this situation, a strong gas flow will be generated due to the large pressure difference between the chambers 1 and 2, and the gas flow will vigorously stir up the first Contaminants in the chamber 20. This effect can even be done with the first chamber compared to without the closure device 40. Figure 4 schematically depicts a lithography apparatus in accordance with one non-limiting embodiment of the present invention. In this embodiment, the closure device discussed with reference to Figure 3c is located "inside" the opening 30 and is located "inside" the opening 3". In the embodiment 138628.doc •15- 200944959, the 'square' (not shown) is achieved, and the enclosed device 40 can be in the same effect. This embodiment may be beneficial because 幺u is an additional space that is not required for the mechanism for enclosing the device 40. In a typical lithography-to-noise setting, the distance between the opening 40 and the top surface of the substrate table WT is 5 holes, -mm. Therefore, the space for manufacturing the sealed device can form a provocation, which can be solved by this method. Figure 5 is a schematic illustration of a lithography apparatus according to one of the non-limiting embodiments of the present invention. In this embodiment, the configuration is closed to close the opening 30 (DGL) while
保持氣體流動能力之封閉器件5G不為似板結構。實情為， 圖5之封閉器件5〇之似圓錐結構互補於開口 之似圓 錐、-構° I s之’本發明之實施例的封閉器件不限於板， 而疋可具有允許大體上封閉開口 3〇同時仍允許第一腔室1〇 與第二腔室20之間的氣體流動的任何形狀。The closed device 5G that maintains the gas flow capability is not a plate-like structure. In fact, the closed device of FIG. 5 has a conical structure that is complementary to the opening of the conical shape, and the closure device of the embodiment of the present invention is not limited to the plate, and the crucible may have a substantially closed opening 3 The crucible still allows any shape of gas flow between the first chamber 1 and the second chamber 20.
該封閉器件50可由於其增加第二腔室2〇中之污染物之行 進距離以進入第一腔室i 〇的效率而為有利的。封閉器件可 具有許多小槽孔，槽孔不為直通而為彎曲的，以便擴大行 進距離（污染物之行進長度）。 儘官在此本文中可特定地參考微影裝置在1C製造中之使 用’但應理解’本文所描述之微影裝置可具有其他應用， 諸如，製造積體光學系統、用於磁域記憶體之導引及偵測 圖案、平板顯示器、液晶顯示器（LCD)、薄膜磁頭，等 等。熟習此項技術者應瞭解，在該等替代應用之情境中， 可認為本文對術語「晶圓」或「晶粒」之任何使用分別與 更通用之術語「基板」或「目標部分」同義。可在曝光之 138628.doc -16- 200944959 2 =後在（例如）軌道（通常將抗㈣丨層施加至基板且顯影 :、、，蝕劑之工具)、度量衡工具及/或檢測工具中處理 =所提及之基板。適用時，可將本文之揭示應用於該等 及其他基板處理工具。另外，可將基板處理一次以上， ^如）以便形成多㈣，使得本文所使用之術語基板亦可 曰代已經含有多個經處理層之基板。 ❹ ❿ 儘管以上可料地參考在光學微影術之情境中對本發明 之實施例的使用，但應瞭解，本發明可用於其他應用（例 如’壓印微影術）中，且在情境允許時不限於光學微影 術。在壓印微影術中，園安 圖案化益件中之構形界定形成於基 板上之圖案。可將圖案化器件之構形壓入被供應至基板之 抗姓劑層中，在基板上，抗姓劑藉由施加電磁輻射、熱、 堅力或其組合而固化。在抗蝕劑固化之後，將圖案化器件 移出抗蝕劑，從而在其中留下圖案。 本文所使用之術§吾「輻射」及「光束」涵蓋所有類型之 電磁輻射’包括紫外線（υν)輕射（例如，具有為或為約如 τ米355 '丁、米、248奈米、193奈米、157奈米或126奈米 之波長）及遂紫外線（EUV)輻射（例如，具有在為$奈米至Μ 奈米之範圍内的波長）；以及粒子束（諸如，離子束或電子 束）。 術°°透鏡」在情境允許時可指代各種類型之光學組件 之任-者或組合’包括折射、反射、磁性、電磁及靜電光 學組件。 儘管以上已描述本發明之特^實施例，但應瞭解，可以 138628.doc 200944959 :所描述之方式不同的其他方式來實踐本發明。 5 ’本發明可採取如下形式：電腦程式，其含有描述如以 上所揭示之方法之機器可讀指令的一或多個序列 儲存媒體（例如，半導體記憶體、磁碟或光碟），其具有= 存於其中之該電腦程式。 績 以上描述意欲為說明性而非限制性的1此，對於 此項技術者而言將顯而易見的為，可在不脫離以下所閣明 之申請專利範圍之範，的情況下對如所描述之本發 修改。 ▽ 【圖式簡單說明】 圖1描繪根據本發明之一實施例的微影裝置； 圖2描緣圖i之微影裝置的含有投影系統之第mi 有基板台之第二腔室的示意性視圖，其中在第一腔室舆第 二腔室之間具有開口； 圖3a描緣圖2之開口的示意性視圖，其中基板台係在相 對於開口之第一位置中； 圖3b描繪圖2之開口的示意性視圖，其中基板台係在相 對於開口之第二位置中； 圖3c描繪經移動至適當位置中以大體上封閉開口之封閉 器件的示意性視圖； 圖4示意性地描繪圖3(：之封閉器件的實施例；及 圖5示意性地描繪圖3c之封閉器件的實施例。 【主要元件符號說明】 B 輻射光束 138628.doc 200944959The closure device 50 can be advantageous due to its increased efficiency of entering the first chamber i 之 by the distance traveled by contaminants in the second chamber 2〇. The closure device can have a plurality of small slots that are not bent for straight-through to expand the travel distance (the length of travel of the contaminant). The use of lithographic apparatus in 1C fabrication may be specifically referenced herein, but it should be understood that the lithographic apparatus described herein may have other applications, such as fabrication of integrated optical systems for magnetic domain memory. Guide and detection patterns, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, and the like. Those skilled in the art will appreciate that any use of the terms "wafer" or "die" herein is considered synonymous with the more general term "substrate" or "target portion" in the context of such alternative applications. It can be processed in the exposure of 138628.doc -16- 200944959 2 = in, for example, orbital (usually applying an anti-(tetra) layer to the substrate and developing:,,,,,,,,,,,,,,,,,, = the substrate mentioned. Where applicable, the disclosure herein can be applied to such and other substrate processing tools. Alternatively, the substrate can be treated more than once, such as to form multiple (four), such that the term substrate as used herein can also replace a substrate that already contains multiple processed layers. ❿ ❿ While the above discussion of the use of embodiments of the invention in the context of optical lithography is described above, it will be appreciated that the invention may be used in other applications (eg, 'imprint lithography'), and where context permits Not limited to optical lithography. In imprint lithography, the configuration in the patterning benefit defines the pattern formed on the substrate. The patterning device can be configured to be pressed into an anti-surname layer that is applied to the substrate where the anti-surname agent is cured by the application of electromagnetic radiation, heat, adhesion, or a combination thereof. After the resist is cured, the patterned device is removed from the resist to leave a pattern therein. As used herein, § "radiation" and "beam" encompass all types of electromagnetic radiation 'including ultraviolet (υν) light shots (for example, with or as about τ meters 355 'd, meters, 248 nm, 193 Nano, 157 nm or 126 nm wavelengths) and ultraviolet (EUV) radiation (for example, wavelengths in the range of $ nanometers to nanometers); and particle beams (such as ion beams or electrons) bundle). The lens can refer to any or all of the various types of optical components as the context permits, including refractive, reflective, magnetic, electromagnetic, and electrostatic optical components. Although the embodiments of the present invention have been described above, it should be understood that the present invention may be practiced in other ways that are described in the manner of 138628.doc 200944959. 5 'The invention may take the form of a computer program containing one or more sequence storage media (e.g., semiconductor memory, diskette or compact disc) describing machine readable instructions as described above, having = The computer program stored in it. The above description is intended to be illustrative and not limiting, and it will be apparent to those skilled in the art that the invention may be described as described without departing from the scope of the claims. Send changes. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 depicts a lithography apparatus according to an embodiment of the present invention; FIG. 2 is a schematic diagram of a second chamber of a lithography apparatus having a projection system of a mi-substrate stage of the lithography apparatus of FIG. View, wherein there is an opening between the first chamber and the second chamber; Figure 3a is a schematic view of the opening of Figure 2, wherein the substrate stage is in a first position relative to the opening; Figure 3b depicts Figure 2 A schematic view of an opening in which the substrate stage is in a second position relative to the opening; Figure 3c depicts a schematic view of the closure device moved into position to substantially close the opening; Figure 4 schematically depicts 3(: an embodiment of a closed device; and Fig. 5 schematically depicts an embodiment of the enclosed device of Fig. 3c. [Major component symbol description] B Radiation beam 138628.doc 200944959
c 目標部分 DGL 動態氣鎖 IF1 位置感測器 IF2 位置感測器 IL 照明系統 Ml 光罩對準標記 M2 光罩對準標記 MA 圖案化器件 MT 支撐結構 PI 基板對準標記 P2 基板對準標記 PM 第一定位器 PS 投影系統 PW 第二定位器 SO 輻射源 W 基板 WT 基板台 138628.doc •19c Target part DGL Dynamic air lock IF1 Position sensor IF2 Position sensor IL Illumination system Ml Mask alignment mark M2 Mask alignment mark MA Patterning device MT Support structure PI Substrate alignment mark P2 Substrate alignment mark PM First Positioner PS Projection System PW Second Positioner SO Radiation Source W Substrate WT Substrate Table 138628.doc •19