JP2000340844A - Infrared ray transmission element - Google Patents

Infrared ray transmission element

Info

Publication number
JP2000340844A
JP2000340844A JP14673899A JP14673899A JP2000340844A JP 2000340844 A JP2000340844 A JP 2000340844A JP 14673899 A JP14673899 A JP 14673899A JP 14673899 A JP14673899 A JP 14673899A JP 2000340844 A JP2000340844 A JP 2000340844A
Authority
JP
Japan
Prior art keywords
circuit board
substrate
optical function
reflection
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14673899A
Other languages
Japanese (ja)
Inventor
Toshiyuki Suzuki
俊之 鈴木
Eiji Kagawa
英司 香川
Masaaki Nakada
公明 中田
Yoshiaki Kanbe
祥明 神戸
Shunsuke Matsushima
俊輔 松島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP14673899A priority Critical patent/JP2000340844A/en
Publication of JP2000340844A publication Critical patent/JP2000340844A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To lower profile and reduce costs by a method wherein a circuit substrate forming an electric circuit is integrally provided with an optical func tion part such as light condensing reflection, and selective transmission. SOLUTION: A light emitting element 21, a light receiving element 22, and a signal processing chip 20 are fitted on one plane of an infrared rays transmission element. A circuit substrate 1 is provided on the one plane with a circuit pattern 23 for connecting thereto, and is formed by injection molding using a resin such as transparent and insulated polycarbonte, acrylic, sulfone material or the like, called as an MID substrate. A projection 11 is provided with a reflection film 12 on the surface, constituting a reflection mirror 3 as a reverse face mirror. The reflection mirror 12 is formed by plating, vapor, or the like, and, when increasing noise-resistance as collectively having a filter characteristic of selectively reflecting only a predetermined wavelength (infrared lights), the reflection mirror 12 is formed as a high dielectric multilayer film.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は赤外線の伝送のため
の赤外線伝送素子に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared transmission device for transmitting infrared light.

【0002】[0002]

【従来の技術】赤外線の発光または受光あるいは発光と
受光とを行う赤外線伝送デバイスにおいては、発光また
は及び受光のための素子が取り付けられているとともに
電気的回路が形成されている回路基板に、赤外線の集光
や配光のためのレンズや反射鏡といった光学機能部品を
取り付けたものとして形成されている。
2. Description of the Related Art In an infrared transmission device for emitting or receiving infrared light or for emitting and receiving infrared light, a circuit board on which an element for emitting or receiving light is mounted and an electric circuit is formed is attached to an infrared transmission device. It is formed as an optical functional component such as a lens or a reflector for condensing or distributing light.

【0003】[0003]

【発明が解決しようとする課題】この場合、回路基板に
光学機能部品の実装工程が必要である上に、別部品であ
る光学機能部品の存在で低プロファイル化することが困
難となっている。
In this case, a process for mounting the optical functional component on the circuit board is required, and it is difficult to reduce the profile due to the presence of the optical functional component which is a separate component.

【0004】本発明はこのような点に鑑みなされたもの
であって、その目的とするところは光学機能部を備えて
いるにもかかわらず低プロファイル化することができ、
しかも安価である赤外線伝送素子を提供するにある。
[0004] The present invention has been made in view of such a point, and its object is to achieve a low profile despite having an optical function unit.
Another object of the present invention is to provide an inexpensive infrared transmission device.

【0005】[0005]

【課題を解決するための手段】しかして本発明は、発光
または及び受光のための素子が取り付けられているとと
もに電気的回路が形成されている回路基板が、上記素子
のための集光や反射や選択透過といった光学機能部を一
体に備えていることに特徴を有している。
According to the present invention, a circuit board on which an element for light emission or light reception is mounted and an electric circuit is formed is provided with a light condensing or reflecting element for the element. It has a feature in that it is provided with an optical function unit such as a laser beam and selective transmission.

【0006】回路基板が光学機能部を備えているため
に、別途光学機能部品を後付けする必要がないものであ
る。
Since the circuit board has the optical function part, it is not necessary to separately add an optical function part.

【0007】ここでの光学機能部は、回路基板における
素子実装面と反対側の面に反射膜を設けることで形成さ
れるとともに上記素子実装面を赤外線の入射出面として
いる反射鏡が好適であるが、回路基板を凹面を備えた第
1基板と、該凹面に嵌め込まれて第1基板と一体化され
ているとともに素子が実装された第2基板とからなるも
のとし、光学機能部は第1基板と第2基板の境界面で形
成されて光を反射する反射鏡としてもよい。
[0007] The optical function portion here is preferably formed by providing a reflection film on the surface of the circuit board opposite to the device mounting surface, and is preferably a reflecting mirror having the device mounting surface as an infrared incident / outgoing surface. However, the circuit board is composed of a first substrate having a concave surface, and a second substrate fitted with the concave surface and integrated with the first substrate and having an element mounted thereon. A reflecting mirror formed at the interface between the substrate and the second substrate and reflecting light may be used.

【0008】回路基板の片面側と他面側とに異なる光学
機能を備えた光学機能部を夫々設けてもよく、この場
合、回路基板の片面側に反射鏡を形成し、回路基板の他
面側にレンズを形成したり、回路基板の片面側に反射鏡
を形成し、回路基板の他面側にプリズムを形成したりす
ることができる。
An optical function unit having different optical functions may be provided on one side and the other side of the circuit board. In this case, a reflecting mirror is formed on one side of the circuit board, and the other side of the circuit board is provided. A lens can be formed on one side of the circuit board, a reflecting mirror can be formed on one side of the circuit board, and a prism can be formed on the other side of the circuit board.

【0009】素子は反射ラミネートによって封止してお
くのも好ましい。
Preferably, the element is sealed with a reflective laminate.

【0010】また、回路基板が素子の実装部に電極とし
ての対の突部を備えており、素子は該突部間に差し込ま
れているようにしてもよい。
Further, the circuit board may be provided with a pair of projections as electrodes on a mounting portion of the element, and the element may be inserted between the projections.

【0011】[0011]

【発明の実施の形態】以下本発明を実施の形態の一例に
基づいて詳述すると、図1は本発明に係る赤外線伝送素
子の一例を示すもので、発光素子21及び受光素子22
と信号処理用チップ(IC)20とが片面に取りつけら
れるとともに、これらを接続する回路パターン23が片
面に設けられている回路基板1は、MID基板と称され
ているもので、透明絶縁性のポリカーボネート、アクリ
ル、ポリサルフォン等の樹脂の射出成形によって形成さ
れているとともに、上記射出成形時に同時に成形された
半球状の突部11を他面側に備えている。該突部11
は、その表面に反射膜12が設けられることで、裏面鏡
としての反射鏡3を構成しており、回路基板1の受発光
素子21,22が取り付けられた片面側から回路基板1
に入射した光は、上記反射鏡3での反射で受光素子22
に入射し、また発光素子21から出た光は反射鏡3で反
射して上記片面側から出射する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to an embodiment. FIG. 1 shows an example of an infrared transmission device according to the present invention.
And a signal processing chip (IC) 20 are mounted on one side, and a circuit pattern 23 for connecting them is provided on one side. The circuit board 1 is called an MID substrate, and has a transparent insulating property. It is formed by injection molding of a resin such as polycarbonate, acrylic, or polysulfone, and has a hemispherical projection 11 formed on the other surface at the same time as the injection molding. The protrusion 11
Constitutes a reflecting mirror 3 as a backside mirror by providing a reflecting film 12 on the surface thereof, and the circuit board 1 is mounted on one side of the circuit board 1 on which the light emitting and receiving elements 21 and 22 are attached.
Incident on the light receiving element 22 is reflected by the reflecting mirror 3.
And the light emitted from the light emitting element 21 is reflected by the reflecting mirror 3 and emitted from the one side.

【0012】反射膜12は、メッキあるいは蒸着などで
形成するが、特定波長(赤外光)のみを選択的に反射す
るフィルター特性を合わせ持つものとして耐ノイズ性を
高める場合は、高誘電多層膜として形成する。図2は回
路基板1がアクリル樹脂(屈折率1.45)からなる場
合の一例を示しており、MgF2(屈折率1.39)の
第1高誘電体膜12aの上にAl23(屈折率1.6
2)の第2高誘電体膜12bを形成するとともに、これ
ら高誘電体膜12a,12bの膜厚を反射させたい光の
波長の1/4とする。
The reflection film 12 is formed by plating or vapor deposition. If the reflection film 12 has a filter characteristic of selectively reflecting only a specific wavelength (infrared light) to enhance noise resistance, a high dielectric multilayer film is used. Form as FIG. 2 shows an example in which the circuit board 1 is made of an acrylic resin (refractive index 1.45), and Al 2 O 3 is formed on the first high dielectric film 12a of MgF 2 (refractive index 1.39). (Refractive index 1.6
2) The second high dielectric film 12b is formed, and the thickness of these high dielectric films 12a and 12b is set to 1 / of the wavelength of light to be reflected.

【0013】回路パターン23を片面に備えるととも
に、光学機能部である反射鏡3を備えている回路基板1
は、次のようにして形成することができる。すなわち、
透明絶縁性のポリカーボネート、アクリル、ポリサルフ
ォン等の樹脂の射出成形によって図3(a)に示すよう
に、突部11が一体となっている回路基板用成形品1’
を形成し、次いで該成形品1’をアルカリ脱脂すること
で表面に付着した油分等の洗浄を行う。次に真空蒸着ま
たはDCスパッタリング法あるいはRFスパッタリング
法によって図3(b)に示すように成形品1’の全面にレ
ーザー光の反射しやすい反射膜(たとえばAl,Ag,
Au膜)51を形成する。この反射膜51の膜厚は数十
nm〜数百nmが望ましい。この上に図3(c)に示すよ
うに、導電性のメッキ下地膜52を形成する。メッキ下
地膜52はレーザー光を吸収しやすいもの、たとえばC
u,Snの真空蒸着やスパッタリング法で形成する。
A circuit board 1 having a circuit pattern 23 on one side and a reflecting mirror 3 as an optical function part.
Can be formed as follows. That is,
As shown in FIG. 3 (a), a molded product 1 'for a circuit board in which the protrusions 11 are integrated as shown in FIG. 3 (a) by injection molding of a resin such as transparent insulating polycarbonate, acrylic or polysulfone.
Is formed, and then the molded article 1 'is subjected to alkaline degreasing to wash oil and the like attached to the surface. Next, as shown in FIG. 3B, a reflection film (for example, Al, Ag,
An Au film) 51 is formed. The thickness of the reflection film 51 is preferably several tens nm to several hundreds nm. As shown in FIG. 3C, a conductive plating base film 52 is formed thereon. The plating base film 52 is a film that easily absorbs laser light, for example, C
It is formed by vacuum deposition or sputtering of u and Sn.

【0014】次いで、図3(d)に示すように、導電性の
上記下地膜52の表面にレーザーパターニングを行い、
レーザー光を照射した部分の下地膜52の除去を行う。
レーザー光としては、第2あるいは第3高調波YAGレ
ーザー、YAGレーザーのようなメッキ下地膜52での
吸収性の良いものを用い、ガルバノミラー等を利用して
走査を行うことで、回路部と回路部以外の部分との境界
部にレーザー光を照射することで、上記境界部のメッキ
下地膜52を除去するのである。この時、メッキ下地膜
52の下の反射膜51は、成形品1’にレーザー光がダ
メージを与えてしまうことを防ぐ。
Next, as shown in FIG. 3D, laser patterning is performed on the surface of the conductive base film 52,
The portion of the base film 52 irradiated with the laser light is removed.
As a laser beam, a second or third harmonic YAG laser, a laser having good absorbability in the plating base film 52, such as a YAG laser, is used, and scanning is performed using a galvanometer mirror or the like. By irradiating a laser beam to a boundary portion with a portion other than the circuit portion, the plating base film 52 at the boundary portion is removed. At this time, the reflection film 51 under the plating base film 52 prevents the laser light from damaging the molded product 1 '.

【0015】さらに図3(e)に示すように、酸エッチン
グによって上記境界部の反射膜51の除去を行った後、
図3(f)に示すように、回路部となるところに給電を行
って、電気銅メッキ、電気ニッケルメッキ、電気金メッ
キなどで回路パターン23を形成し、次に図3(g)に示
すように、非回路部及び反射膜51を覆っている残存し
た下地膜52を過硫酸アンモニアなどによるソフトエッ
チングで除去し、さらに図3(h)に示すように、下地膜
52の下層にあった反射膜51を酸エッチングで除去す
る。
Further, as shown in FIG. 3E, after the reflection film 51 at the boundary is removed by acid etching,
As shown in FIG. 3 (f), power is supplied to the circuit portion, and a circuit pattern 23 is formed by electrolytic copper plating, electric nickel plating, electric gold plating, etc., and then, as shown in FIG. 3 (g). Then, the remaining underlying film 52 covering the non-circuit portion and the reflective film 51 is removed by soft etching with ammonia persulfate or the like, and further, as shown in FIG. The film 51 is removed by acid etching.

【0016】この場合、反射鏡3のための反射膜12は
上記反射膜51を利用するものとなっているが、反射膜
12を高誘電多層膜として形成する場合は、図4(a)(b)
に示すように、成形品1’に対して高誘電多層膜からな
る反射膜12を形成した後、反射膜51の形成(図4
(c))、下地膜52の形成(図4(d))、レーザーパター
ニング(図4(e))、反射膜51のエッチング(図4
(f))、電気メッキによる回路パターン23の作成(図
4(g))、不要な全下地膜52の除去(図4(h))、不要
な全反射膜51の除去(図4(i))という手順で作成す
る。
In this case, the reflecting film 12 for the reflecting mirror 3 uses the above-mentioned reflecting film 51. However, when the reflecting film 12 is formed as a high dielectric multilayer film, FIG. b)
As shown in FIG. 4, after the reflection film 12 made of a high dielectric multilayer film is formed on the molded product 1 ', the reflection film 51 is formed (see FIG. 4).
(c)), formation of the base film 52 (FIG. 4D), laser patterning (FIG. 4E), etching of the reflection film 51 (FIG. 4).
(f)), the formation of the circuit pattern 23 by electroplating (FIG. 4 (g)), the removal of the unnecessary total underlayer 52 (FIG. 4 (h)), and the removal of the unnecessary total reflection film 51 (FIG. 4 (i) )).

【0017】図5は突部11の幅を回路基板1の両端部
の幅と同じとしたものを示している。光学機能部である
反射鏡3の集光効率は低くなるが、より小さい赤外線伝
送素子を得ることができる。
FIG. 5 shows the case where the width of the protrusion 11 is the same as the width of both ends of the circuit board 1. Although the light collection efficiency of the reflecting mirror 3, which is an optical function unit, is reduced, a smaller infrared transmission device can be obtained.

【0018】受発光素子21,22の回路基板1への取
り付けに際しては、回路パターン23との電気的接続が
必要であり、一般的には信号処理用チップ(IC)20
の回路パターン23との接続と同様にワイヤボンディン
グや半田付けなどで行うが、図6あるいは図7に示すよ
うに、素子21,22を挟み込むことができるように突
部16(この突部16は凹所15の内壁面であってもよ
い)を形成するとともに、回路基板1表面における凹所
15に面する部分、あるいは突部16に回路パターン2
3の電極部を形成し、素子21,22を凹所15や突部
16,16間に差し込んで、導電性接着剤24で電気接
合することで行うと、素子21,22の実装が容易とな
る。図中25は素子21,22における電極である。
When the light emitting and receiving elements 21 and 22 are mounted on the circuit board 1, an electrical connection with the circuit pattern 23 is required, and the signal processing chip (IC) 20 is generally used.
As in the case of the connection with the circuit pattern 23, the bonding is performed by wire bonding, soldering or the like, but as shown in FIG. 6 or FIG. (The inner wall surface of the recess 15 may be formed), and a portion of the surface of the circuit board 1 facing the recess 15 or the protrusion 16 may be provided with the circuit pattern 2.
3 is formed, the elements 21 and 22 are inserted between the recesses 15 and the protrusions 16 and 16 and are electrically joined with the conductive adhesive 24, so that the elements 21 and 22 can be easily mounted. Become. In the figure, reference numeral 25 denotes electrodes of the elements 21 and 22.

【0019】図8は、回路基板1に形成した凹所15に
素子21,22を差し込んで実装した後、凹所15の開
口面に反射ラミネート17を貼り付けて素子21,22
を封止したものを示している。素子21,22の光学効
率を向上させることができる。
FIG. 8 shows that the devices 21 and 22 are inserted into the recesses 15 formed in the circuit board 1 and mounted, and then the reflection laminate 17 is attached to the opening surfaces of the recesses 15 to mount the devices 21 and 22.
Is shown. The optical efficiency of the elements 21 and 22 can be improved.

【0020】回路基板1に形成する光学機能部は反射鏡
3ほか、レンズやプリズム、選択透過性フィルター等で
あってもよい。図9は反射鏡3とレンズ30の2つを光
学機能部として設けたものを示しており、回路パターン
23が片面に形成されている回路基板1の他面側に反射
鏡3を、上記片面側で回路パターン23の形成部及び素
子21,22の配設部と異なる部分にレンズ30,30
を設けている。配光が必要な場合、レンズ30,30に
よって必要とする配光特性を得ることができる。
The optical function section formed on the circuit board 1 may be a lens, a prism, a selective transmission filter, or the like, in addition to the reflection mirror 3. FIG. 9 shows an example in which two of the reflecting mirror 3 and the lens 30 are provided as an optical function part. The reflecting mirror 3 is provided on the other surface of the circuit board 1 on which the circuit pattern 23 is formed on one surface, On the side different from the portion where the circuit pattern 23 is formed and the portion where the elements 21 and 22 are provided,
Is provided. When light distribution is required, the required light distribution characteristics can be obtained by the lenses 30 and 30.

【0021】図10あるいは図11に示すように、他面
側に反射鏡3を備えた回路基板1の片面側にプリズム3
1を一体に形成してもよい。この場合もプリズム31に
よって必要とする配光制御を行うことができる。
As shown in FIG. 10 or FIG. 11, a prism 3 is provided on one side of a circuit board 1 provided with a reflecting mirror 3 on the other side.
1 may be formed integrally. Also in this case, the necessary light distribution control can be performed by the prism 31.

【0022】図12に他例を示す。これは凹面18を備
えた第1基板1aと、該凹面18に嵌め込まれて第1基
板1aと一体化される第2基板1bとからなるものと
し、光学機能部は第1基板1aと第2基板1bの境界面
で形成されて光を反射する反射鏡3としたものである。
樹脂21,22が表面に実装される第2基板1bは赤外
線を透過する透明樹脂で形成するが、第1基板1aは透
明なものでなくてもよい。第1基板1aと第2基板1b
の境界面に反射鏡3を形成することから、高反射率のも
のを確実に得ることができる。
FIG. 12 shows another example. This is composed of a first substrate 1a having a concave surface 18 and a second substrate 1b fitted into the concave surface 18 and integrated with the first substrate 1a, and the optical function part is composed of the first substrate 1a and the second substrate 1a. The reflector 3 is formed at the boundary surface of the substrate 1b and reflects light.
The second substrate 1b on which the resins 21 and 22 are mounted is formed of a transparent resin that transmits infrared rays, but the first substrate 1a does not have to be transparent. First substrate 1a and second substrate 1b
Since the reflecting mirror 3 is formed on the boundary surface of the above, a mirror having a high reflectivity can be reliably obtained.

【0023】この場合の回路基板1は、次のようにして
形成すればよい。すなわち、図13(a)に示すように、
ポリフタルアミド、ポリアミド、液晶ポリマー、ポリイ
ミド、ポリエーテルイミドなどの絶縁性樹脂を用いて凹
面18を備えた成形品1a’の射出成形を行い、次いで
アルカリ脱脂した成形品1aに図13(b)に示すよう
に、真空蒸着やスパッタリングなどでアルミニウムなど
からなる高反射率の反射膜12を形成する。反射膜51
の膜厚は数十nm〜数百nmとする。その後、図13
(c)に示すように、再度射出成形して上記凹面18を埋
めることになる成形品1b’を形成する。
The circuit board 1 in this case may be formed as follows. That is, as shown in FIG.
Injection molding of a molded article 1a 'having a concave surface 18 is performed by using an insulating resin such as polyphthalamide, polyamide, liquid crystal polymer, polyimide, or polyetherimide, and then the molded article 1a which has been degreased with alkali is shown in FIG. As shown in (1), a reflective film 12 of high reflectivity made of aluminum or the like is formed by vacuum evaporation or sputtering. Reflective film 51
Has a thickness of several tens nm to several hundreds nm. Then, FIG.
As shown in (c), injection molding is again performed to form a molded product 1b 'that fills the concave surface 18.

【0024】この後、前述の場合と同様に、成形品1
a,1b全面に反射膜51の形成(図13(d))とメッ
キ下地膜52の形成(図13(e))、レーザーパターニン
グ(図13(f))、反射膜51のエッチング(図13
(g))、電気メッキによる回路パターン23の作成(図
13(h))、不要な全下地膜52の除去(図13(i))、
不要な全反射膜51の除去(図13(j))という手順で作
成する。
Thereafter, as in the case described above, the molded article 1
13 (d), the formation of a plating base film 52 (FIG. 13 (e)), laser patterning (FIG. 13 (f)), and etching of the reflection film 51 (FIG. 13).
(g)), preparation of the circuit pattern 23 by electroplating (FIG. 13 (h)), removal of all unnecessary underlayers 52 (FIG. 13 (i)),
The unnecessary total reflection film 51 is created by a procedure of removing (FIG. 13 (j)).

【0025】[0025]

【発明の効果】以上のように本発明においては、発光ま
たは及び受光のための素子が取り付けられているととも
に電気的回路が形成されている回路基板が、上記素子の
ための集光や反射や選択透過といった光学機能部を一体
に備えているために、別途光学機能部品を後付けする必
要がなく、従って、光学機能部を備えているにもかかわ
らず低プロファイル化することができるものであり、ま
た光学機能部品の別途製作及び取付工程が不要であるた
めに安価に提供することができる。
As described above, according to the present invention, a circuit board on which an element for light emission or light reception is mounted and an electric circuit is formed is provided with a light condensing, reflection and reflection for the element. Since the optical function unit such as selective transmission is integrally provided, it is not necessary to separately add an optical function component, and therefore, even though the optical function unit is provided, the profile can be reduced, Further, since there is no need to separately manufacture and attach an optical functional component, the optical functional component can be provided at low cost.

【0026】ここでの光学機能部は、回路基板における
素子実装面と反対側の面に反射膜を設けることで形成さ
れるとともに上記素子実装面を赤外線の入射出面として
いる反射鏡とすることが、その形状の簡易さの点から製
造も容易となるが、回路基板を凹面を備えた第1基板
と、該凹面に嵌め込まれて第1基板と一体化されている
とともに素子が実装された第2基板とからなるものと
し、光学機能部は第1基板と第2基板の境界面で形成さ
れて光を反射する反射鏡としてもよく、この場合、より
高い反射率のものを確実に得ることができる。
Here, the optical function portion is formed by providing a reflection film on the surface of the circuit board opposite to the device mounting surface, and may be a reflecting mirror having the device mounting surface as an infrared incident / outgoing surface. Although it is easy to manufacture because of the simplicity of its shape, a first substrate having a concave surface on a circuit board and a first substrate mounted on the concave surface and integrated with the first substrate and having an element mounted thereon are provided. The optical function part may be a reflecting mirror formed at the boundary surface between the first substrate and the second substrate to reflect light. In this case, it is necessary to surely obtain a higher reflectance. Can be.

【0027】回路基板の片面側と他面側とに異なる光学
機能を備えた光学機能部を夫々設けてもよく、集光と配
光制御の両方を行うものとすることなどができる。この
場合、回路基板の片面側に反射鏡を形成し、回路基板の
他面側にレンズを形成したり、回路基板の片面側に反射
鏡を形成し、回路基板の他面側にプリズムを形成したり
することが、やはり形状の簡易さの点から製造も容易と
なる。
Optical function units having different optical functions may be provided on one side and the other side of the circuit board, respectively, so that both light collection and light distribution control can be performed. In this case, a reflecting mirror is formed on one side of the circuit board and a lens is formed on the other side of the circuit board, or a reflecting mirror is formed on one side of the circuit board and a prism is formed on the other side of the circuit board. In this case, manufacturing is also easy in terms of simplicity of the shape.

【0028】素子は反射ラミネートによって封止してお
くと、光学効率を簡便に向上させることができる。
If the element is sealed with a reflective laminate, the optical efficiency can be easily improved.

【0029】また、回路基板が素子の実装部に電極とし
ての対の突部を備えており、素子は該突部間に差し込ま
れているようにしておくと、素子の回路基板上の回路パ
ターンとの電気的接続及び素子の取り付けを簡単に行う
ことができる。
Further, the circuit board is provided with a pair of projections as electrodes on the mounting portion of the element, and if the element is inserted between the projections, the circuit pattern on the circuit board of the element can be obtained. Electrical connection and device attachment can be easily performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態の一例の斜視図である。FIG. 1 is a perspective view of an example of an embodiment of the present invention.

【図2】同上の反射膜の拡大断面図である。FIG. 2 is an enlarged cross-sectional view of the reflection film of the above.

【図3】同上の回路基板の製造工程を示す断面図であ
る。
FIG. 3 is a sectional view showing a manufacturing process of the circuit board according to the first embodiment;

【図4】同上の回路基板の他の製造工程を示す断面図で
ある。
FIG. 4 is a sectional view showing another manufacturing step of the circuit board according to the first embodiment;

【図5】他例の斜視図である。FIG. 5 is a perspective view of another example.

【図6】さらに他例の斜視図である。FIG. 6 is a perspective view of still another example.

【図7】(a)(b)は同上の素子実装部の断面図である。FIGS. 7A and 7B are cross-sectional views of an element mounting portion according to the first embodiment;

【図8】別の例の斜視図である。FIG. 8 is a perspective view of another example.

【図9】さらに別の例の斜視図である。FIG. 9 is a perspective view of still another example.

【図10】他例の斜視図である。FIG. 10 is a perspective view of another example.

【図11】さらに他例の斜視図である。FIG. 11 is a perspective view of still another example.

【図12】別の例の斜視図である。FIG. 12 is a perspective view of another example.

【図13】同上の回路基板の製造工程を示す断面図であ
る。
FIG. 13 is a cross-sectional view showing a step of manufacturing the circuit board of the above.

【符号の説明】[Explanation of symbols]

1 回路基板 3 反射鏡 21 発光素子 22 受光素子 23 回路パターン DESCRIPTION OF SYMBOLS 1 Circuit board 3 Reflector 21 Light emitting element 22 Light receiving element 23 Circuit pattern

───────────────────────────────────────────────────── フロントページの続き (72)発明者 中田 公明 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 神戸 祥明 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 松島 俊輔 大阪府門真市大字門真1048番地松下電工株 式会社内 Fターム(参考) 2H037 AA01 BA02 BA11 CA38 DA03 DA12 5E338 BB75 CC01 CC10 EE22 5F041 CA74 CA77 DA20 DA26 DA55 DA83 EE23 EE25 5F088 EA09 HA05 HA09 JA03 JA06 LA01  ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kimiaki Nakata 1048 Kazumasa Kadoma, Osaka Prefecture Matsushita Electric Works Co., Ltd. 72) Inventor Shunsuke Matsushima 1048 Kazuma Kadoma, Kadoma City, Osaka Prefecture F-term in Matsushita Electric Works Co., Ltd. JA03 JA06 LA01

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 発光または及び受光のための素子が取り
付けられているとともに電気的回路が形成されている回
路基板が、上記素子のための集光や反射や選択透過とい
った光学機能部を一体に備えていることを特徴とする赤
外線伝送素子。
1. A circuit board on which an element for light emission or light reception is mounted and on which an electric circuit is formed, integrally forms an optical function unit such as light collection, reflection and selective transmission for the element. An infrared transmission device, comprising:
【請求項2】 光学機能部は、回路基板における素子実
装面と反対側の面に反射膜を設けることで形成されると
ともに上記素子実装面を赤外線の入射出面としている反
射鏡であることを特徴とする請求項1記載の赤外線伝送
素子。
2. The optical function unit according to claim 1, wherein the optical function unit is formed by providing a reflection film on a surface of the circuit board opposite to the element mounting surface, and is a reflecting mirror having the element mounting surface as an infrared incident / outgoing surface. The infrared transmission device according to claim 1, wherein
【請求項3】 回路基板は、凹面を備えた第1基板と、
該凹面に嵌め込まれて第1基板と一体化されているとと
もに素子が実装された第2基板とからなり、光学機能部
は第1基板と第2基板の境界面で形成されて光を反射す
る反射鏡であることを特徴とする請求項1記載の赤外線
伝送素子。
3. A circuit board, comprising: a first substrate having a concave surface;
A second substrate on which the elements are mounted while being integrated with the first substrate and fitted into the concave surface, wherein the optical function part is formed at a boundary surface between the first substrate and the second substrate and reflects light; The infrared transmission device according to claim 1, wherein the infrared transmission device is a reflection mirror.
【請求項4】 回路基板の片面側と他面側とに異なる光
学機能を備えた光学機能部が夫々設けられていることを
特徴とする請求項1〜3のいずれかの項に記載の赤外線
伝送素子。
4. The infrared ray according to claim 1, wherein an optical function section having a different optical function is provided on one side and the other side of the circuit board. Transmission element.
【請求項5】 回路基板の片面側に反射鏡が形成され、
回路基板の他面側にレンズが形成されていることを特徴
とする請求項4記載の赤外線伝送素子。
5. A reflecting mirror is formed on one side of the circuit board,
5. The infrared transmission device according to claim 4, wherein a lens is formed on the other surface of the circuit board.
【請求項6】 回路基板の片面側に反射鏡が形成され、
回路基板の他面側にプリズムが形成されていることを特
徴とする請求項4記載の赤外線伝送素子。
6. A reflecting mirror is formed on one side of the circuit board,
The infrared transmission device according to claim 4, wherein a prism is formed on the other surface of the circuit board.
【請求項7】 素子は反射ラミネートによって封止され
ていることを特徴とする請求項1〜6のいずれかの項に
記載の赤外線伝送素子。
7. The infrared transmission device according to claim 1, wherein the device is sealed with a reflective laminate.
【請求項8】 回路基板は素子の実装部に電極としての
対の突部を備えており、素子は該突部間に差し込まれて
いることを特徴とする請求項1〜7のいずれかの項に記
載の赤外線伝送素子。
8. The circuit board according to claim 1, wherein a pair of projections as electrodes are provided on a mounting portion of the element, and the element is inserted between the projections. Item 8. The infrared transmission element according to Item.
JP14673899A 1999-05-26 1999-05-26 Infrared ray transmission element Pending JP2000340844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14673899A JP2000340844A (en) 1999-05-26 1999-05-26 Infrared ray transmission element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14673899A JP2000340844A (en) 1999-05-26 1999-05-26 Infrared ray transmission element

Publications (1)

Publication Number Publication Date
JP2000340844A true JP2000340844A (en) 2000-12-08

Family

ID=15414487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14673899A Pending JP2000340844A (en) 1999-05-26 1999-05-26 Infrared ray transmission element

Country Status (1)

Country Link
JP (1) JP2000340844A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1521313A2 (en) * 2003-10-03 2005-04-06 LumiLeds Lighting U.S., LLC Integrated reflector cup for a light emitting device mount
JP2010535415A (en) * 2007-07-31 2010-11-18 リニューアブル・エナジー・コーポレーション・エーエスエー Method for providing a contact on the back surface of a solar cell, and solar cell having a contact provided by the method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1521313A2 (en) * 2003-10-03 2005-04-06 LumiLeds Lighting U.S., LLC Integrated reflector cup for a light emitting device mount
EP1521313A3 (en) * 2003-10-03 2010-12-29 Philips Lumileds Lighting Company LLC Integrated reflector cup for a light emitting device mount
JP2010535415A (en) * 2007-07-31 2010-11-18 リニューアブル・エナジー・コーポレーション・エーエスエー Method for providing a contact on the back surface of a solar cell, and solar cell having a contact provided by the method

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