JP2000328288A - Formation of plating film on micropore or groove and its forming device - Google Patents

Formation of plating film on micropore or groove and its forming device

Info

Publication number
JP2000328288A
JP2000328288A JP13619499A JP13619499A JP2000328288A JP 2000328288 A JP2000328288 A JP 2000328288A JP 13619499 A JP13619499 A JP 13619499A JP 13619499 A JP13619499 A JP 13619499A JP 2000328288 A JP2000328288 A JP 2000328288A
Authority
JP
Japan
Prior art keywords
plating
treatment
grooves
degreasing
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13619499A
Other languages
Japanese (ja)
Inventor
Satoshi Chinda
聡 珍田
Mamoru Onda
護 御田
Ryoichi Urao
亮一 浦尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP13619499A priority Critical patent/JP2000328288A/en
Publication of JP2000328288A publication Critical patent/JP2000328288A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To improve the penetration of a treating liquid into micropores or grooves and to improve the deposition characteristic therein by maintaining a material to be formed with a plating film in a reduced pressure atmosphere and executing treatment, such as plating, while spraying a treating liquid thereto. SOLUTION: The degreasing treatment in a surface treatment is executed in the reduced pressure atmosphere and is executed by injecting a degreasing treating liquid LD to an insulating tape material 2 in a degreasing treating vessel 4 via degreasing treating liquid injection nozzles 16a and 16b. As a result, the degreasing treating liquid LD infiltrates uniformly into the micropores or grooves of the insulating tape material 2 and the wettability of the inside of all the micropores or grooves with the degreasing treating liquid LD is improved and the deposition characteristic of the plating, i.e., the deposition characteristic of the plating film in the plating treatment of a post stage, is improved. Further, the surface treatment in the micropores or grooves of the insulating tape material 2 is uniformly and well carried out and, therefore, the conduction defects in a TAB tape to be manufactured by using a tape-like substrate 18 are decreased and electrical reliability is improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、微細孔または溝の
めっき膜形成方法及びその形成装置に係り、特に、多層
配線基板または半導体ウェハ表面における微細孔または
溝のめっき膜形成方法及びその形成装置に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for forming a plated film of fine holes or grooves, and more particularly to a method of forming a plated film of fine holes or grooves on a surface of a multilayer wiring board or a semiconductor wafer and an apparatus for forming the same. It is about.

【0002】[0002]

【従来の技術】半導体デバイスの高集積化、高性能化、
高速化、発熱量増大などに伴い、これらが搭載される配
線基板においても、高密度配線、高速伝送、高放熱性等
を考慮した種々の多層配線基板が開発され、一部適用さ
れ始めている。
2. Description of the Related Art High integration and performance of semiconductor devices,
With the increase in the speed and the increase in the amount of heat generated, various types of multilayer wiring boards have been developed in consideration of high-density wiring, high-speed transmission, high heat dissipation, and the like, and some of them have begun to be applied.

【0003】多層配線基板として、絶縁材の片面に配線
パターン(銅箔パターン)が形成された配線基板を複数
枚積層して多層化すると共に、各配線基板を導通突起
(バンプ)を介して導通させる方法が提案されている
(特開平8−37375号公報)。
[0003] As a multilayer wiring board, a plurality of wiring boards having a wiring pattern (copper foil pattern) formed on one surface of an insulating material are laminated to form a multilayer, and each wiring board is electrically connected via conductive projections (bumps). A method has been proposed (Japanese Patent Laid-Open No. 8-37375).

【0004】配線基板相互の導通化のためのバンプは、
各配線基板に形成されたブラインドビアホール又は微細
スルーホール(以下、微細孔と呼ぶ)内を、導電性物質
で埋め込む方法(ビアフィリング)が最も多く用いら
れ、このビアフィリングの方法として、めっき法や導電
性ペースト埋め込み法など、多くの方法が考案されてい
る。
[0004] The bumps for making the wiring boards mutually conductive,
A method (via filling) of embedding a conductive material into a blind via hole or a fine through hole (hereinafter, referred to as a fine hole) formed on each wiring substrate is most often used. Many methods have been devised, such as a conductive paste embedding method.

【0005】ここで、めっき法によるビアフィリング
は、導電性ペースト埋め込み法と比較して、導通突起の
高さのバラツキが少なく、電気伝導性に優れ、また、コ
スト的にも有利であるため、非常に有用な方法である。
[0005] Here, via filling by the plating method has less variation in the height of the conductive projections, is excellent in electric conductivity, and is advantageous in cost as compared with the conductive paste embedding method. A very useful method.

【0006】このように、多層配線基板の製造に際して
は、微細孔内のめっき処理工程が重要な要素技術となっ
ている。めっき処理工程は、主に、脱脂処理、酸洗処
理、めっき処理、および水洗処理の4つの工程からなっ
ている。
[0006] As described above, in the production of a multilayer wiring board, the plating process in the fine holes is an important elemental technology. The plating step mainly includes four steps of degreasing, pickling, plating, and water washing.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、多層配
線基板製造の際に形成される微細孔の開口径は300μ
m以下であり、小径のものでは100μmを下回るもの
さえある。これらの微細孔内に、脱脂液、酸洗液、めっ
き液などを浸透させ、成膜のための清浄化処理および/
または電気化学的処理を行う場合、孔径が小さいと処理
液が入りにくく、処理不良が出やすい。
However, the opening diameter of the fine holes formed at the time of manufacturing a multilayer wiring board is 300 μm.
m or less, and even smaller ones having a diameter of less than 100 μm. A degreasing solution, a pickling solution, a plating solution, or the like is penetrated into these micropores, and a cleaning process for forming a film and / or
Alternatively, in the case of performing an electrochemical treatment, if the pore diameter is small, the treatment liquid is difficult to enter, and a treatment failure is likely to occur.

【0008】そこで、微細孔内への処理液の浸透を促す
べく、処理液中で超音波振動をかけたり、浸透性の良い
界面活性剤を処理液中に添加する方法などが採用される
が、超音波付与の場合、銅箔パターンと絶縁板との密着
性が低下し、銅箔パターンが剥離する問題がある。ま
た、処理液中に界面活性剤を添加する場合、処理液が発
泡し易いため、作業性の低下を招く恐れがある。
Therefore, in order to promote the penetration of the processing solution into the micropores, a method of applying ultrasonic vibration in the processing solution or adding a surfactant having good permeability to the processing solution is employed. In the case of applying ultrasonic waves, there is a problem that adhesion between the copper foil pattern and the insulating plate is reduced, and the copper foil pattern is peeled off. In addition, when a surfactant is added to the processing liquid, the processing liquid easily foams, which may cause a decrease in workability.

【0009】そこで本発明は、上記課題を解決し、微細
孔または溝内への処理液の浸透が良好で、微細孔または
溝内におけるめっき膜の成膜性が良好な微細孔または溝
のめっき膜形成方法及びその形成装置を提供することに
ある。
Accordingly, the present invention solves the above-mentioned problems, and has a good penetration of a processing solution into micropores or grooves, and a plating method for micropores or grooves having good film-forming properties in micropores or grooves. An object of the present invention is to provide a film forming method and a film forming apparatus.

【0010】[0010]

【課題を解決するための手段】上記課題を解決するため
に請求項1の発明は、微細孔または溝を有する被めっき
膜形成材に、脱脂処理、酸洗処理、めっき処理、および
水洗処理を施してめっき膜を形成する方法において、上
記被めっき膜形成材を減圧雰囲気に保つと共に、被めっ
き膜形成材に処理液を吹付けながらめっき等の処理を行
うものである。
According to a first aspect of the present invention, a material to be plated having fine holes or grooves is subjected to degreasing, pickling, plating, and water washing. In the method of forming a plating film by performing plating, the plating film forming material is maintained in a reduced pressure atmosphere, and a treatment such as plating is performed while a treatment liquid is sprayed on the plating film forming material.

【0011】請求項2の発明は、微細孔または溝を有す
る被めっき膜形成材に、脱脂処理、酸洗処理、めっき処
理、および水洗処理を施してめっき膜を形成する方法に
おいて、上記被めっき膜形成材を減圧雰囲気に保つと共
に、被めっき膜形成材に脱脂処理液を吹付けながら脱脂
処理を行った後、酸洗処理を行い、その後、被めっき膜
形成材を減圧雰囲気に保つと共に、被めっき膜形成材に
めっき液を吹付けながらめっき処理を行うものである。
According to a second aspect of the present invention, there is provided a method for forming a plated film by subjecting a material to be plated having fine holes or grooves to degreasing, pickling, plating, and rinsing to form a plated film. While maintaining the film forming material in a reduced-pressure atmosphere, performing a degreasing treatment while spraying a degreasing treatment liquid on the material to be plated, and performing an acid washing treatment, and then maintaining the material to be plated in a reduced-pressure atmosphere, The plating process is performed while spraying a plating solution onto the material to be plated.

【0012】以上の方法によれば、微細孔または溝を有
する被めっき膜形成材を減圧下に保持した後、被めっき
膜形成材表面に処理液を吹き付けているため、微細孔ま
たは溝内に処理液が効果的に浸入し、微細孔または溝内
の表面処理を均一(良好)に行うことができる。
According to the above method, the processing liquid is sprayed on the surface of the material to be plated after the material to be plated having the fine holes or grooves is held under reduced pressure, and thus, The treatment liquid can effectively penetrate, and the surface treatment in the fine holes or grooves can be performed uniformly (good).

【0013】このように、被めっき膜形成材を減圧下に
保持して処理液を吹き付けることによって、処理液が微
細孔または溝内に効果的に浸入するのは、減圧下では処
理液中に含まれる気泡や減圧ガス成分(脱脂処理液の場
合は、溶存酸素、溶存炭酸ガス等)が処理液から容易に
排除されるからである。この結果、処理液が被めっき膜
形成材の微細孔または溝内に効率よく浸透し、濡れ性が
良好となるので、微細孔または溝内の表面処理を均一に
行うことができる。
As described above, by spraying the processing liquid while holding the material to be plated under a reduced pressure, the processing liquid effectively penetrates into the fine holes or the grooves only when the processing liquid is introduced into the processing liquid under the reduced pressure. This is because bubbles and decompressed gas components (in the case of a degreasing treatment liquid, dissolved oxygen, dissolved carbon dioxide gas, etc.) are easily removed from the treatment liquid. As a result, the treatment liquid efficiently penetrates into the fine holes or grooves of the material to be plated, and the wettability is improved, so that the surface treatment in the fine holes or grooves can be performed uniformly.

【0014】請求項3の発明は、上記処理液を予め脱気
しておき、その後、上記被めっき膜形成材に処理液を吹
き付ける請求項1又は請求項2記載の微細孔または溝の
めっき膜形成方法である。
According to a third aspect of the present invention, the processing solution is degassed in advance, and then the processing solution is sprayed on the material for forming a film to be plated. It is a forming method.

【0015】以上の方法によれば、脱気した処理液を被
めっき膜形成材表面に吹き付けているため、微細孔また
は溝内の表面処理が更に良好となる。
According to the above method, since the degassed treatment liquid is sprayed on the surface of the material for forming the film to be plated, the surface treatment in the fine holes or grooves is further improved.

【0016】請求項4の発明は、微細孔または溝を有す
る被めっき膜形成材に、脱脂処理、酸洗処理、めっき処
理、および水洗処理を施してめっき膜を形成する装置に
おいて、減圧雰囲気に保たれた処理槽内に、その処理槽
内に導入された被めっき膜形成材の表面に処理液を吹き
付けるための吹付けノズルを1個または複数設けたもの
である。
According to a fourth aspect of the present invention, there is provided an apparatus for forming a plated film by subjecting a material to be plated having fine holes or grooves to degreasing, pickling, plating, and rinsing to form a plated film. In the kept processing tank, one or a plurality of spray nozzles for spraying the processing liquid onto the surface of the material to be plated film introduced into the processing tank are provided.

【0017】請求項5の発明は、微細孔または溝を有す
る被めっき膜形成材に、脱脂処理、酸洗処理、めっき処
理、および水洗処理を施してめっき膜を形成する装置に
おいて、減圧雰囲気に保たれた脱脂処理槽およびめっき
処理槽内に、その脱脂処理槽およびめっき処理槽内に導
入された被めっき膜形成材の表面に脱脂処理液およびめ
っき液を吹き付けるための1個または複数の吹付けノズ
ルを設けたものである。
According to a fifth aspect of the present invention, there is provided an apparatus for forming a plated film by subjecting a material to be plated having fine holes or grooves to degreasing, pickling, plating, and rinsing to form a plated film. In the kept degreasing tank and plating tank, one or more sprays for spraying a degreasing solution and a plating solution onto the surface of the material to be plated introduced into the degreasing tank and plating tank. An attachment nozzle is provided.

【0018】以上の構成によれば、処理槽を減圧雰囲気
保持可能に形成し、処理槽内に1個または複数の吹付け
ノズルを設けているため、微細孔または溝内に処理液が
効果的に浸入し、微細孔または溝内の表面処理を均一
(良好)に行うことができる。
According to the above arrangement, the processing tank is formed so as to be able to hold a reduced-pressure atmosphere, and one or a plurality of spray nozzles are provided in the processing tank. And the surface treatment in the fine holes or grooves can be performed uniformly (good).

【0019】請求項6の発明は、上記処理液を上記吹付
けノズルに供給するための貯留タンクに、真空ポンプを
接続した請求項4又は請求項5記載の微細孔または溝の
めっき膜形成装置である。
According to a sixth aspect of the present invention, there is provided an apparatus for forming a plating film having fine holes or grooves, wherein a vacuum pump is connected to a storage tank for supplying the processing liquid to the spray nozzle. It is.

【0020】以上の構成によれば、貯留タンクに真空ポ
ンプを接続しているため、貯留タンク内に導入される処
理液の脱気が可能となる。
According to the above arrangement, since the vacuum pump is connected to the storage tank, the processing liquid introduced into the storage tank can be degassed.

【0021】請求項7の発明は、微細孔または溝を有す
る配線基板に、脱脂処理、酸洗処理、めっき処理、およ
び水洗処理を施し、配線基板表面にめっき膜を形成して
なる電子装置用配線基板において、減圧雰囲気に保たれ
た上記配線基板に処理液を吹き付けながらめっき等の処
理を行ったものである。
According to a seventh aspect of the present invention, there is provided an electronic device comprising a wiring substrate having fine holes or grooves, which is subjected to degreasing, pickling, plating, and washing to form a plating film on the surface of the wiring substrate. In the wiring substrate, a treatment such as plating is performed while spraying a processing liquid onto the wiring substrate maintained in a reduced-pressure atmosphere.

【0022】請求項8の発明は、微細孔または溝を有す
る半導体ウェハに、脱脂処理、酸洗処理、めっき処理、
および水洗処理を施し、半導体ウェハ表面にめっき膜を
形成してなる電子装置用半導体ウェハにおいて、減圧雰
囲気に保たれた上記半導体ウェハに処理液を吹き付けな
がらめっき等の処理を行ったものである。
The invention according to claim 8 is a semiconductor wafer having fine holes or grooves, which is subjected to degreasing, pickling, plating,
In addition, in a semiconductor wafer for an electronic device in which a plating film is formed on the surface of a semiconductor wafer by performing a water washing process, a process such as plating is performed while spraying a processing solution on the semiconductor wafer maintained in a reduced pressure atmosphere.

【0023】[0023]

【発明の実施の形態】以下、本発明の好適一実施の形態
を添付図面に基いて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described below with reference to the accompanying drawings.

【0024】微細孔または溝内の表面処理を行う場合の
問題点は、微細孔または溝内に気泡が入り、この気泡が
絶縁層となって導通されず表面処理ができなくなること
である。
A problem with the surface treatment in the micropores or grooves is that bubbles enter the micropores or grooves, and the air bubbles become an insulating layer and are not conducted, so that surface treatment cannot be performed.

【0025】そこで、本発明者等が種々の検討を重ねた
結果、被めっき膜形成材に処理を施す処理槽を減圧雰囲
気に保ち、被めっき膜形成材の表面にノズルを用いて処
理液を吹き付けることで、処理液による微細孔または溝
内の濡れ性が良好となり、また、気泡が発生したり浸入
したりしてもその離れがよくなり、表面処理を均一に行
うことができるということを見出した。
Therefore, as a result of various studies conducted by the present inventors, a processing tank for processing the material to be plated is kept in a reduced pressure atmosphere, and the processing liquid is applied to the surface of the material to be plated by using a nozzle. By spraying, the wettability in the micropores or grooves by the treatment liquid is improved, and even if bubbles are generated or penetrated, the separation is improved and the surface treatment can be uniformly performed. I found it.

【0026】本発明の微細孔または溝のめっき膜形成装
置1の概略図を図1に示す。
FIG. 1 is a schematic view of a microporous or grooved plating film forming apparatus 1 according to the present invention.

【0027】図1に示すように、本発明の微細孔または
溝のめっき膜形成装置1は、主に、絶縁テープ材(被め
っき膜形成材)2を送出すための送出しリール3と、送
り出された絶縁テープ材2に脱脂処理を施す脱脂処理槽
4と、脱脂処理後の絶縁テープ材2を酸で洗う酸洗槽5
と、酸洗後の絶縁テープ材2にめっきを施す電気銅めっ
き槽(めっき処理槽)6と、めっき後のテープ状基板1
8を水で洗う水洗槽7と、水洗後のテープ状基板18を
巻き取る巻取りリール9とで構成されるものである。
As shown in FIG. 1, an apparatus 1 for forming a plating film having fine holes or grooves according to the present invention mainly comprises a delivery reel 3 for delivering an insulating tape material (material for forming a film to be plated) 2, A degreasing treatment tank 4 for performing a degreasing treatment on the delivered insulating tape material 2 and a pickling tank 5 for washing the insulating tape material 2 after the degreasing treatment with acid.
And an electrolytic copper plating tank (plating treatment tank) 6 for plating the insulating tape material 2 after pickling, and the tape-like substrate 1 after plating.
A washing tank 7 for washing the substrate 8 with water and a take-up reel 9 for winding a tape-like substrate 18 after washing with water.

【0028】絶縁テープ材2の幅方向両端にはスプロケ
ットホール(送り用穴;図示せず)が形成されていると
共に、所定の位置(バンプ形成位置)に微細孔または溝
(図示せず)が形成されており、片面(又は両面)に銅
箔(又は銅合金箔)が形成されている。
At both ends in the width direction of the insulating tape material 2, sprocket holes (feed holes; not shown) are formed, and fine holes or grooves (not shown) are formed at predetermined positions (bump forming positions). The copper foil (or copper alloy foil) is formed on one side (or both sides).

【0029】脱脂処理槽4は、殻体である脱脂槽本体1
1と、脱脂槽本体11における絶縁テープ材2の導入側
および送出側に設けられるシャッター部材12,13
と、脱脂槽本体11に吸引ライン15を介して接続され
る真空ポンプ14と、脱脂槽本体11の内部に臨んで設
けられた多数本(図1中では8本)の脱脂処理液噴射ノ
ズル16a,16bとで構成されている。ここで、脱脂
処理液噴射ノズル16a,16bは、絶縁テープ材2の
表面・裏面側(図1中では上面・下面側)に相対して設
けられている。このノズル16a,16bは、通常の筒
状のノズル以外に、溝状のノズルを含むものである。ま
た、脱脂処理槽4の前段および後段には、たるみ槽10
a,10bが設けられている。
The degreasing tank 4 comprises a shell-shaped degreasing tank body 1.
1 and shutter members 12 and 13 provided on the introduction side and the delivery side of the insulating tape material 2 in the degreasing tank body 11.
And a vacuum pump 14 connected to the degreasing tank main body 11 via a suction line 15, and a large number (eight in FIG. 1) of degreasing treatment liquid spray nozzles 16a provided inside the degreasing tank main body 11 , 16b. Here, the degreasing liquid jet nozzles 16a and 16b are provided facing the front and back sides (the upper and lower sides in FIG. 1) of the insulating tape material 2. The nozzles 16a and 16b include a groove-shaped nozzle in addition to a normal cylindrical nozzle. In addition, a slack tank 10 is provided before and after the degreasing tank 4.
a and 10b are provided.

【0030】水洗槽7と巻取りリール9との間には、テ
ープ状基板18の表面に付着した水を乾かすための乾燥
装置8が設けられている。
A drying device 8 is provided between the washing tank 7 and the take-up reel 9 for drying water adhering to the surface of the tape-shaped substrate 18.

【0031】脱脂処理液LD を脱脂処理液噴射ノズル1
6a,16bに供給するための供給手段は特に限定する
ものではなく、脱脂処理液LD を一旦貯留タンク(図示
せず)に貯留した後、脱脂処理液噴射ノズル16a,1
6bに供給するようにしてもよい。この際、貯留タンク
内の脱脂処理液LD を脱気すべく、貯留タンク(図示せ
ず)に真空ポンプ(図示せず)を接続することが好まし
い。
The degreasing degreasing liquid L D treatment fluid ejection nozzle 1
6a, supply means for supplying to 16b are not particularly limited, after stored once the storage tank to a degreasing treatment liquid L D (not shown), degreasing liquid injection nozzle 16a, 1
6b. At this time, in order to degas the degreasing liquid L D in the storage tank, it is preferable to connect the vacuum pump (not shown) to the storage tank (not shown).

【0032】次に、本発明の微細孔または溝のめっき膜
形成方法を図1及び図5に基いて説明する。
Next, a method for forming a plating film of a fine hole or groove according to the present invention will be described with reference to FIGS.

【0033】本発明の微細孔または溝のめっき膜形成方
法のフローを図5に示す。ここで、図5(a)は絶縁テ
ープ51の横断面図を示し、図5(b)は絶縁テープ5
1にパンチングを施した後の横断面図を示し、図5
(c)は絶縁テープ51に銅箔53を接着した後の横断
面図を示し、図5(d)は絶縁テープ材2にめっきを施
した後の横断面図を示し、図5(e)はテープ状基板1
8の銅箔53にエッチングを施した後の横断面図を示し
ている。尚、図1と同様の部材には同じ符号を付してい
る。
FIG. 5 shows the flow of the method for forming a plating film for micropores or grooves according to the present invention. Here, FIG. 5A shows a cross-sectional view of the insulating tape 51, and FIG.
1 shows a cross-sectional view after punching, and FIG.
5C shows a cross-sectional view after bonding the copper foil 53 to the insulating tape 51, FIG. 5D shows a cross-sectional view after plating the insulating tape material 2, and FIG. Is a tape-shaped substrate 1
8 shows a cross-sectional view after the copper foil 53 of No. 8 is etched. The same members as those in FIG. 1 are denoted by the same reference numerals.

【0034】先ず、図5(a)に示す絶縁テープ51に
パンチングを施し、図5(b)に示すように、絶縁テー
プ51を貫通して微細孔または溝52およびスプロケッ
トホール(送り用穴)56を形成する。その後、図5
(c)に示すように、絶縁テープの片面(図5(c)中
では下面)に銅箔53を接着し、絶縁テープ材2を作製
する。この絶縁テープ材2を送出しリール3に巻き取っ
た後、めっき膜形成装置1にセットする。
First, the insulating tape 51 shown in FIG. 5A is punched, and as shown in FIG. 5B, the fine holes or grooves 52 and the sprocket holes (feed holes) penetrate through the insulating tape 51. 56 is formed. Then, FIG.
As shown in FIG. 5C, a copper foil 53 is adhered to one surface of the insulating tape (the lower surface in FIG. 5C), and the insulating tape material 2 is produced. After the insulating tape material 2 is sent out and wound on a reel 3, it is set in the plating film forming apparatus 1.

【0035】その後、送出しリール3から絶縁テープ材
2を所定の長さ送り出し、脱脂処理槽4内に絶縁テープ
材2を導き、しかる後、絶縁テープ材2の走行を停止さ
せる。ここで、脱脂処理槽4内における絶縁テープ材2
の走行は停止していても、他の槽内では絶縁テープ材2
が常時走行しているため、脱脂処理槽4の前段・後段
に、たるみ槽10a,10bを設けることによって、他
の槽内における絶縁テープ材2の走行を可能としてい
る。
Thereafter, the insulating tape material 2 is sent out from the sending reel 3 by a predetermined length, and the insulating tape material 2 is guided into the degreasing tank 4, and then the running of the insulating tape material 2 is stopped. Here, the insulating tape material 2 in the degreasing tank 4
Of the insulation tape material 2 in other tanks even if the running of
Is always running, so that the slack tanks 10a and 10b are provided before and after the degreasing tank 4 to allow the insulating tape material 2 to run in another tank.

【0036】次に、シャッター部材12,13を閉じた
後、真空ポンプ14を稼働させると共に、吸引ライン1
5を介して脱脂処理槽4内を所定の圧力に減圧する。そ
の後、脱脂処理液噴射ノズル16a,16bから脱脂処
理液LD を噴射し、絶縁テープ材2の被めっき部(微細
孔または溝52および微細孔または溝52周辺部)の脱
脂を行う。
Next, after closing the shutter members 12 and 13, the vacuum pump 14 is operated and the suction line 1 is closed.
The pressure inside the degreasing tank 4 is reduced to a predetermined pressure through the step 5. Thereafter, degreasing liquid injection nozzle 16a, the degreasing liquid L D injected from 16b, degreased the plated portion of the insulating tape 2 (fine holes or grooves 52 and the fine holes or grooves 52 periphery).

【0037】この減圧状態での噴射によって、絶縁テー
プ材2における微細孔または溝52内に脱脂処理液LD
が効果的に浸入し、また、微細孔または溝52内におけ
る脱脂処理液LD との濡れ性が良好となると共に、微細
孔または溝52内に気泡が発生・浸入したとしても気泡
の離れが良好となり、微細孔または溝52内の脱脂処理
を均一に行うことができる。この時、脱脂処理液LD
予め減圧して脱気すると共に、脱脂処理液LD 中に含ま
れる溶存ガスを除いておき、その後、噴射に供すること
によって、脱脂処理を更に効果的に行うことが可能とな
る。
By the jetting under the reduced pressure, the degreasing treatment liquid L D is introduced into the fine holes or grooves 52 in the insulating tape material 2.
There effectively infiltration, also with wettability with the degreasing liquid L D in the fine holes or grooves 52 is improved, also leaves the bubble as the bubble in the micropores or groove 52 occurs, intrusion As a result, the degreasing treatment in the fine holes or grooves 52 can be performed uniformly. At this time, the degreasing treatment liquid L D is previously depressurized and degassed, and the dissolved gas contained in the degreasing treatment liquid L D is removed, and thereafter, the degreasing treatment is performed more effectively to perform the degreasing treatment. It becomes possible.

【0038】ただし、脱脂処理液LD を減圧環境下に保
持しているため、脱脂処理液LD の温度を高めると脱脂
処理液LD が沸騰し、脱脂処理液LD の量が減少して脱
脂処理液LD の組成が崩れる恐れがある。このため、本
発明の微細孔または溝のめっき膜形成方法を行うにあた
って、脱脂処理液LD が沸騰しないように、脱脂処理液
D の温度に応じて減圧度を適宜調整する必要がある。
[0038] However, since holding the degreasing liquid L D in a reduced pressure environment, a degreasing liquid L D raise the temperature of the degreasing liquid L D boils, the amount of degreasing liquid L D is reduced There is a possibility that the composition of the degreasing liquid L D may be destroyed. Therefore, in performing the fine holes or grooves plating film forming method of the present invention, as degreasing liquid L D does not boil, it is necessary to appropriately adjust the degree of vacuum in accordance with the temperature of the degreasing liquid L D.

【0039】次に、脱脂処理後の絶縁テープ材2を酸洗
槽5内に導入し、大気解放下で、酸(例えば、硫酸)洗
浄し、絶縁テープ材2の被めっき部を清浄にする。
Next, the insulating tape material 2 after the degreasing treatment is introduced into the pickling tank 5, and is washed with an acid (for example, sulfuric acid) in the open to the atmosphere to clean the portion to be plated of the insulating tape material 2. .

【0040】次に、酸洗後の絶縁テープ材2を電気銅め
っき槽6内に導入し、絶縁テープ材2をめっき液(図示
せず)中に浸漬した状態で電気銅めっきを行う。微細孔
または溝52の底面は銅箔53が露出しているため、銅
箔53をめっき液中で電気的に導通させることによっ
て、微細孔または溝52の底面からめっき膜が成膜し、
厚付けめっきにより微細孔または溝52にバンプ54が
形成される。
Next, the insulating tape material 2 after pickling is introduced into the electrolytic copper plating tank 6, and electrolytic copper plating is performed while the insulating tape material 2 is immersed in a plating solution (not shown). Since the copper foil 53 is exposed on the bottom surface of the fine hole or groove 52, a plating film is formed from the bottom surface of the fine hole or groove 52 by electrically conducting the copper foil 53 in a plating solution,
Bumps 54 are formed in the fine holes or grooves 52 by thick plating.

【0041】次に、電気銅めっき後のテープ状基板18
を水洗槽7内に導入して水洗した後、乾燥装置8を用い
て乾燥させ、巻取りリール9に巻き取る。
Next, the tape-like substrate 18 after electrolytic copper plating
Is introduced into a washing tank 7, washed with water, dried using a drying device 8 and taken up on a take-up reel 9.

【0042】最後に、テープ状基板18における銅箔5
3の非接合面(図5(d)中では下面)にフォトレジス
トを塗布した後、露光・現像によりフォトレジストにレ
ジストパターンを形成し、その後、エッチングを施して
銅箔微細パターン55を下面に有するTABテープ(電
子装置用配線基板)50を作製する。
Finally, the copper foil 5 on the tape-like substrate 18
After applying a photoresist to the non-bonded surface (the lower surface in FIG. 5D) of No. 3, a resist pattern is formed on the photoresist by exposure and development, and thereafter, etching is performed to form a copper foil fine pattern 55 on the lower surface. A TAB tape (wiring board for electronic device) 50 having the same is manufactured.

【0043】本発明の微細孔または溝のめっき膜形成方
法は、脱脂処理槽4のみへの適用に限定するものではな
く、脱脂処理槽4、酸洗槽5、電気銅めっき槽6、およ
び水洗槽7などの複数の処理槽に組み合わせて適用して
もよいことは言うまでもなく、これによって、微細孔ま
たは溝52におけるめっき膜の成膜性が更に向上する。
The method for forming a plating film of fine holes or grooves according to the present invention is not limited to the application to the degreasing tank 4 alone, but includes the degreasing tank 4, the pickling tank 5, the electrolytic copper plating tank 6, and the water washing. Needless to say, the present invention may be applied to a plurality of processing tanks such as the tank 7 in combination, thereby further improving the film forming property of the plating film in the fine holes or grooves 52.

【0044】本発明の微細孔または溝のめっき膜形成方
法におけるめっき法は、電解処理(電気めっき)に限定
するものではなく、電気エネルギーを付与しない浸漬処
理や無電解めっきであってもよいことは言うまでもな
い。
The plating method in the method for forming a plating film for micropores or grooves of the present invention is not limited to electrolytic treatment (electroplating), but may be immersion treatment without applying electric energy or electroless plating. Needless to say.

【0045】本発明の微細孔または溝のめっき膜形成方
法によれば、表面処理における脱脂処理を減圧雰囲気下
で、かつ、脱脂処理槽4内の絶縁テープ材2に脱脂処理
液噴射ノズル16a,16bを介して脱脂処理液LD
噴射しているため、微細孔または溝52内に脱脂処理液
D が均一に浸入し、全ての微細孔または溝52におい
て脱脂処理液LD に対する濡れ性が良好となる。
According to the method for forming a plating film for micropores or grooves of the present invention, the degreasing treatment in the surface treatment is performed under a reduced pressure atmosphere, and the degreasing treatment liquid spray nozzles 16a, due to the injection degreased liquid L D via 16b, degreasing liquid L D in the micropores or grooves 52 are uniformly penetrates, wettability to degreasing treatment liquid L D in all of the fine holes or grooves 52 Is good.

【0046】また、微細孔または溝52における脱脂処
理液LD に対する濡れ性が良好であるため、後工程のめ
っき処理において、めっきの析出性(めっき膜の成膜
性)が良好となる。
[0046] Furthermore, since wettability to degreasing treatment liquid L D in the fine holes or grooves 52 is good, the plating treatment in a later step, plating deposition properties (film formability of the plated film) is improved.

【0047】さらに、絶縁テープ材2の微細孔または溝
52内の表面処理が均一かつ良好に行われるため、テー
プ状基板18を用いて作製したTABテープ50におい
て、めっき不良に起因する導通不良が少なくなり、高い
電気的信頼性が得られる。
Further, since the surface treatment in the fine holes or grooves 52 of the insulating tape material 2 is performed uniformly and favorably, in the TAB tape 50 manufactured using the tape-shaped substrate 18, conduction failure due to plating failure is reduced. Less, and high electrical reliability is obtained.

【0048】次に、本発明の他の実施の形態(第1の実
施の形態および第2の実施の形態)を添付図面に基いて
説明する。
Next, another embodiment of the present invention (first embodiment and second embodiment) will be described with reference to the accompanying drawings.

【0049】第1の実施の形態の微細孔または溝のめっ
き膜形成装置21の概略図を図2に、図2におけるめっ
き槽26の拡大図を図3に示す。尚、図1と同様の部材
には同じ符号を付している。
FIG. 2 is a schematic view of the apparatus 21 for forming a plating film of fine holes or grooves according to the first embodiment, and FIG. 3 is an enlarged view of the plating tank 26 in FIG. The same members as those in FIG. 1 are denoted by the same reference numerals.

【0050】本発明の微細孔または溝のめっき膜形成装
置1は、脱脂処理槽4を減圧雰囲気保持可能に形成する
と共に、槽4内に脱脂処理液噴射ノズル16a,16b
を設けたものであった。
In the apparatus 1 for forming a plating film having fine holes or grooves according to the present invention, the degreasing tank 4 is formed so as to be able to hold a reduced-pressure atmosphere, and the degreasing liquid jet nozzles 16a and 16b are provided in the tank 4.
Was provided.

【0051】これに対して、本実施の形態のめっき膜形
成装置21は、電気銅めっき槽26を減圧雰囲気保持可
能に形成すると共に、槽26内にめっき液噴射ノズル3
6a,36bを設けたものであった。
On the other hand, in the plating film forming apparatus 21 of the present embodiment, the electrolytic copper plating tank 26 is formed so as to be able to hold a reduced-pressure atmosphere, and the plating solution spray nozzle 3 is provided in the tank 26.
6a and 36b.

【0052】すなわち、図2および図3に示すように、
絶縁テープ材2を送出すための送出しリール3と、送り
出された絶縁テープ材2に脱脂処理を施す脱脂処理槽2
4と、脱脂処理後の絶縁テープ材2を酸で洗う酸洗槽5
と、酸洗後の絶縁テープ材2にめっきを施す電気銅めっ
き槽26と、めっき後のテープ状基板18を水で洗う水
洗槽7と、水洗後のテープ状基板18を巻き取る巻取り
リール9とで構成されるものである。
That is, as shown in FIGS. 2 and 3,
A delivery reel 3 for delivering the insulating tape material 2 and a degreasing tank 2 for performing a degreasing process on the delivered insulating tape material 2
4 and a pickling tank 5 for washing the insulating tape material 2 after degreasing with acid.
And an electrolytic copper plating tank 26 for plating the insulating tape material 2 after pickling, a washing tank 7 for washing the plated tape-like substrate 18 with water, and a take-up reel for winding the tape-like substrate 18 after washing. 9.

【0053】電気銅めっき槽26は、めっき槽本体31
における絶縁テープ材2の導入側および送出側に設けら
れるシャッター部材32,33と、めっき槽本体31に
吸引ライン35を介して接続される真空ポンプ34と、
めっき槽本体31の内部に臨んで設けられた多数本(図
2中では8本、図3中では9本)のめっき液噴射ノズル
36a,36bとで構成されている。
The electrolytic copper plating tank 26 includes a plating tank main body 31.
Shutter members 32 and 33 provided on the introduction side and the delivery side of the insulating tape material 2, a vacuum pump 34 connected to the plating tank main body 31 via a suction line 35,
It is composed of a large number (eight in FIG. 2 and nine in FIG. 3) of plating solution jet nozzles 36a and 36b provided facing the inside of the plating tank main body 31.

【0054】ここで、めっき液噴射ノズル36a,36
bは、絶縁テープ材2の表面・裏面側(図2および図3
中では上面・下面側)に相対して設けられている。ま
た、めっき液噴射ノズル36a,36bの各先端には、
陽極としての白金ネット39が設けられている。さら
に、電気銅めっき槽26近傍における絶縁テープ材2の
導入側および送出側には、一対の陰極給電ローラ37
a,37bが設けられている。また更に、電気銅めっき
槽26の前段および後段には、たるみ槽20a,20b
が設けられている。
Here, the plating solution spray nozzles 36a, 36
b denotes the front and back sides of the insulating tape material 2 (FIGS. 2 and 3).
(The upper surface / lower surface side in the figure). In addition, at each end of the plating solution spray nozzles 36a and 36b,
A platinum net 39 as an anode is provided. Further, a pair of cathode power supply rollers 37 are provided on the introduction side and the delivery side of the insulating tape material 2 in the vicinity of the electrolytic copper plating tank 26.
a and 37b are provided. Further, slack tanks 20a and 20b are provided before and after the electrolytic copper plating tank 26.
Is provided.

【0055】次に、本実施の形態の微細孔または溝のめ
っき膜形成方法を図2、図3、及び図5に基いて説明す
る。
Next, a method of forming a plating film for a fine hole or groove according to the present embodiment will be described with reference to FIGS. 2, 3 and 5.

【0056】本発明と同様にして作製した絶縁テープ材
2を送出しリール3に巻き取った後、めっき膜形成装置
21にセットする。
After the insulating tape material 2 produced in the same manner as in the present invention is sent out and wound on a reel 3, it is set in a plating film forming apparatus 21.

【0057】その後、送出しリール3から絶縁テープ材
2を送り出すと共に、脱脂処理槽24内に絶縁テープ材
2を導入し、大気解放下で浸漬脱脂を行い、絶縁テープ
材2の被めっき部(微細孔または溝52および微細孔ま
たは溝52周辺部)を脱脂する。
Thereafter, the insulating tape material 2 is sent out from the delivery reel 3 and the insulating tape material 2 is introduced into the degreasing tank 24, immersed and degreased in the open to the atmosphere, and the portion of the insulating tape material 2 to be plated ( The fine holes or grooves 52 and the periphery of the fine holes or grooves 52 are degreased.

【0058】次に、脱脂処理後の絶縁テープ材2を酸洗
槽5内に導入し、大気解放下で、酸(例えば、硫酸)洗
浄し、絶縁テープ材2の被めっき部を清浄にする。
Next, the insulating tape material 2 after the degreasing treatment is introduced into the pickling tank 5 and washed with an acid (for example, sulfuric acid) in the open to the atmosphere to clean the portion of the insulating tape material 2 to be plated. .

【0059】次に、酸洗後の絶縁テープ材2を所定の長
さ送り出して電気銅めっき槽26内に導入し、しかる
後、絶縁テープ材2の走行を停止させる。ここで、電気
銅めっき槽26内における絶縁テープ材2の走行は停止
していても、他の槽内では絶縁テープ材2が常時走行し
ているため、電気銅めっき槽26の前段・後段に、たる
み槽20a,20bを設けることによって、他の槽内に
おける絶縁テープ材2の走行を可能としている。
Next, the insulating tape material 2 after pickling is sent out for a predetermined length and introduced into the electrolytic copper plating tank 26, and then the running of the insulating tape material 2 is stopped. Here, even though the running of the insulating tape material 2 in the electrolytic copper plating tank 26 is stopped, the insulating tape material 2 is always running in other tanks. By providing the slack tanks 20a and 20b, the running of the insulating tape material 2 in another tank is enabled.

【0060】次に、シャッター部材32,33を閉じた
後、真空ポンプ34を稼働させると共に、吸引ライン3
5を介して電気銅めっき槽26内を所定の圧力に減圧す
る。その後、陰極給電ローラ37a,37bを用いて絶
縁テープ材2をマイナスにチャージすると共に、めっき
液噴射ノズル36a,36bからプラスにチャージされ
ためっき液LM を絶縁テープ材2に噴射し、電気銅めっ
きを行う。図5に示したように、微細孔または溝52の
底面は銅箔53が露出しているため、銅箔53をめっき
液中で電気的に導通させることによって、微細孔または
溝52の底面からめっき膜が成膜し、厚付けめっきによ
り微細孔または溝52にバンプ54が形成される。
Next, after closing the shutter members 32 and 33, the vacuum pump 34 is operated and the suction line 3 is closed.
The pressure in the electrolytic copper plating tank 26 is reduced to a predetermined pressure through the step 5. Thereafter, the cathode feed roller 37a, thereby charging the insulating tape 2 to the negative with 37b, and injection plating solution injection nozzle 36a, the plating liquid L M which is charged positively from 36b in the insulating tape 2, copper Perform plating. As shown in FIG. 5, since the copper foil 53 is exposed from the bottom surface of the fine hole or groove 52, by electrically conducting the copper foil 53 in the plating solution, A plating film is formed, and bumps 54 are formed in the fine holes or grooves 52 by thick plating.

【0061】この減圧状態での噴射によって、絶縁テー
プ材2における微細孔または溝52内にめっき液LM
効果的に浸入し、また、微細孔または溝52内における
めっき液LM との濡れ性が良好となると共に、微細孔ま
たは溝52内に気泡が発生・浸入したとしても気泡の離
れが良好となり、微細孔または溝52内のめっき処理を
均一に行うことができる。この時、めっき液LM を予め
減圧して脱気すると共に、めっき液LM 中に含まれる溶
存ガスを除いておき、その後、噴射に供することによっ
て、めっき処理を更に効果的に行うことが可能となる。
[0061] Wetting of the injection in the vacuum state, the plating solution L M effectively penetrate into the fine pores or grooves 52 in the insulating tape 2, also the plating liquid L M in the fine holes or grooves 52 As a result, even if air bubbles are generated or penetrated into the fine holes or grooves 52, the separation of the air bubbles is improved, and the plating treatment in the fine holes or grooves 52 can be performed uniformly. At this time, along with degassed beforehand under reduced pressure to a plating solution L M, leave remove dissolved gas contained in the plating solution L M, then by subjecting the injection be carried out plating treatment more effectively It becomes possible.

【0062】ただし、めっき液LM を減圧環境下に保持
しているため、めっき液LM の温度を高めるとめっき液
M が沸騰し、めっき液LM の量が減少してめっき液L
M の組成が崩れる恐れがある。このため、本実施の形態
の微細孔または溝のめっき膜形成方法を行うにあたって
も、めっき液LM が沸騰しないように、めっき液LM
温度に応じて減圧度を適宜調整する必要がある。
[0062] However, the plating solution for the L M held in the reduced pressure environment, the plating solution L the plating solution L M and increasing the temperature of the M boils, the plating solution decreases the amount of the plating liquid L M L
The composition of M may be destroyed. Therefore, even when performing the plating film forming method of micropores or grooves of this embodiment, as the plating liquid L M does not boil, it is necessary to appropriately adjust the degree of vacuum in accordance with the temperature of the plating solution L M .

【0063】次に、電気銅めっき後のテープ状基板18
を水洗槽7内に導入して水洗した後、乾燥装置8を用い
て乾燥させ、巻取りリール9に巻き取る。
Next, the tape-like substrate 18 after electrolytic copper plating
Is introduced into a washing tank 7, washed with water, dried using a drying device 8 and taken up on a take-up reel 9.

【0064】最後に、テープ状基板18における銅箔5
3の非接合面(図5(d)中では下面)にフォトレジス
トを塗布した後、露光・現像によりフォトレジストにレ
ジストパターンを形成し、その後、エッチングを施し
て、銅箔微細パターン55を下面に有するTABテープ
50を作製する。
Finally, the copper foil 5 on the tape-like substrate 18
After applying a photoresist to the non-bonding surface (the lower surface in FIG. 5D) of No. 3, a resist pattern is formed on the photoresist by exposure and development, and thereafter, etching is performed to form the copper foil fine pattern 55 on the lower surface. The TAB tape 50 is prepared.

【0065】本実施の形態の微細孔または溝のめっき膜
形成方法によれば、表面処理におけるめっき処理を減圧
雰囲気下で、かつ、電気銅めっき槽26内の絶縁テープ
材2にめっき液噴射ノズル36a,36bを介してめっ
き液LM を噴射しているため、微細孔または溝52内に
気泡が発生・浸入したとしても気泡の離れが良好とな
り、微細孔または溝52内にめっき液LM を均一に浸入
させることができる。
According to the method for forming a plating film for micro holes or grooves according to the present embodiment, the plating treatment in the surface treatment is performed under a reduced pressure atmosphere, and the plating solution spray nozzle is applied to the insulating tape material 2 in the electrolytic copper plating tank 26. 36a, since the ejecting the plating solution L M via 36b, also enables good separation of bubbles as the bubbles in the micropores or groove 52 occurs, penetration plating solution L M in the micropores or groove 52 Can be uniformly infiltrated.

【0066】また、微細孔または溝52内にめっき液L
M が均一に浸入するため、微細孔または溝52内におけ
るめっきの析出性(めっき膜の成膜性)が良好となる。
The plating solution L is placed in the fine holes or grooves 52.
Since M uniformly penetrates, the deposition property (plating film forming property) of plating in the fine holes or grooves 52 is improved.

【0067】第2の実施の形態の微細孔または溝のめっ
き膜形成装置41の概略図を図4に示す。尚、図1乃至
図3と同様の部材には同じ符号を付している。
FIG. 4 is a schematic view of a fine hole or groove plating film forming apparatus 41 according to the second embodiment. The same members as those in FIGS. 1 to 3 are denoted by the same reference numerals.

【0068】本発明の微細孔または溝のめっき膜形成装
置1は、脱脂処理槽4を減圧雰囲気保持可能に形成する
と共に、槽4内に脱脂処理液噴射ノズル16a,16b
を設けたものであり、第1の実施の形態のめっき膜形成
装置21は、電気銅めっき槽26を減圧雰囲気保持可能
に形成すると共に、槽26内にめっき液噴射ノズル36
a,36bを設けたものであった。
In the apparatus 1 for forming a plating film having fine holes or grooves according to the present invention, the degreasing tank 4 is formed so as to be able to maintain a reduced-pressure atmosphere, and the degreasing liquid jet nozzles 16a and 16b are provided in the tank 4.
In the plating film forming apparatus 21 of the first embodiment, an electrolytic copper plating tank 26 is formed so as to be able to hold a reduced-pressure atmosphere, and a plating solution spray nozzle 36 is provided in the tank 26.
a, 36b.

【0069】これに対して、本実施の形態の微細孔また
は溝のめっき膜形成装置41は、脱脂処理槽4および電
気銅めっき槽26を減圧雰囲気保持可能に形成すると共
に、槽4内に脱脂処理液噴射ノズル16a,16bおよ
び槽26内にめっき液噴射ノズル36a,36bを設け
たものである。
On the other hand, in the plating film forming apparatus 41 for fine holes or grooves according to the present embodiment, the degreasing tank 4 and the electrolytic copper plating tank 26 are formed so as to be able to hold a reduced-pressure atmosphere, and the degreasing is performed in the tank 4. The plating solution injection nozzles 36a and 36b are provided in the processing solution injection nozzles 16a and 16b and the tank 26.

【0070】すなわち、図4に示すように、絶縁テープ
材2を送出すための送出しリール3と、送り出された絶
縁テープ材2に脱脂処理を施す脱脂処理槽4と、脱脂処
理後の絶縁テープ材2を酸で洗う酸洗槽5と、酸洗後の
絶縁テープ材2にめっきを施す電気銅めっき槽26と、
めっき後のテープ状基板18を水で洗う水洗槽7と、水
洗後のテープ状基板18を巻き取る巻取りリール9とで
構成されるものである。
That is, as shown in FIG. 4, a delivery reel 3 for delivering the insulating tape material 2, a degreasing treatment tank 4 for performing a degreasing treatment on the delivered insulating tape material 2, and an insulating material after the degreasing treatment A pickling tank 5 for washing the tape material 2 with acid, an electrolytic copper plating tank 26 for plating the insulating tape material 2 after pickling,
It comprises a water washing tank 7 for washing the tape-like substrate 18 after plating with water, and a take-up reel 9 for winding the tape-like substrate 18 after washing.

【0071】脱脂処理槽4の前段および後段には、たる
み槽10a,10bが、電気銅めっき槽26の前段およ
び後段には、たるみ槽20a,20bが設けられてい
る。
The slack tanks 10 a and 10 b are provided before and after the degreasing tank 4, and the slack tanks 20 a and 20 b are provided before and after the electrolytic copper plating tank 26.

【0072】尚、本実施の形態の微細孔または溝のめっ
き膜形成装置41を用いた微細孔または溝のめっき膜形
成方法においても、本発明および第1の実施の形態の微
細孔または溝のめっき膜形成装置1,21を用いた微細
孔または溝のめっき膜形成方法と同様の効果が得られる
ことは言うまでもなく、微細孔または溝52における脱
脂処理液LD に対する濡れ性が更に良好となると共に、
微細孔または溝52内におけるめっき膜の成膜性が更に
良好となるという新たな効果を発揮する。
In the method for forming a plating film for fine holes or grooves using the apparatus 41 for forming a plating film for fine holes or grooves according to the present embodiment, the present invention and the method for forming a plating film for fine holes or grooves according to the first embodiment are also used. the plating film forming method same effects as the fine holes or grooves using a plated film forming apparatus 1, 21 is obtained, not to mention the wettability is further improved with respect to the degreasing treatment liquid L D in the fine holes or grooves 52 Along with
A new effect that the film formability of the plating film in the fine holes or grooves 52 is further improved is exhibited.

【0073】[0073]

【実施例】(実施例1)厚さ50μmで、かつ、片面に
ポリイミド系接着剤が12μm程度の厚さで塗布された
リール状のポリイミドテープ材(商品名:ユーピレツク
ス,宇部興産(株))に、パンチング法でスプロケット
ホール(送り用穴)を形成すると共に、ポリイミドテー
プ材の所定の位置(めっきにより突起を形成する位置)
に直径200μmの微細孔を形成する。
EXAMPLES Example 1 A reel-shaped polyimide tape material having a thickness of 50 μm and having a polyimide adhesive applied on one side to a thickness of about 12 μm (trade name: Iupilex, Ube Industries, Ltd.) Then, a sprocket hole (feeding hole) is formed by a punching method, and a predetermined position of the polyimide tape material (a position where a projection is formed by plating).
Then, micropores having a diameter of 200 μm are formed.

【0074】次に、ポリイミドテープ材の接着剤塗布面
に、18μmの厚さの銅箔をロールラミネータを用いて
熱圧着し、絶縁テープ材を作製する。この絶縁テープ材
に対して、図1に示しためっき膜形成装置を用いて表面
処理を行った。
Next, a copper foil having a thickness of 18 μm is thermocompression-bonded to the adhesive-coated surface of the polyimide tape material using a roll laminator to produce an insulating tape material. This insulating tape material was subjected to a surface treatment using the plating film forming apparatus shown in FIG.

【0075】ここで、脱脂処理槽内の圧力は1.6×1
4 Pa(120Torr=0.16気圧) であり、脱
脂後の表面処理は全て大気解放下(大気圧中)で行っ
た。酸洗槽における酸としては硫酸を、めっき液として
は硫酸銅浴を用いた。
Here, the pressure in the degreasing tank is 1.6 × 1
0 4 Pa (120 Torr = 0.16 atm), and all surface treatments after degreasing were performed in the open to the atmosphere (at atmospheric pressure). Sulfuric acid was used as an acid in the pickling tank, and a copper sulfate bath was used as a plating solution.

【0076】めっきは浸漬方式による電気銅めっきを行
い、めっき液の組成は、硫酸銅(5水和物)が90g/
l、濃硫酸が180g/l、市販添加剤が10ml/l
であり、液温は25℃、電流密度は5A/dm2 、めっ
き厚さ(高さ)はポリイミドテープ材からバンプが突出
するように60μmとした。
The plating is performed by electrolytic copper plating by an immersion method, and the composition of the plating solution is 90 g / copper sulfate (pentahydrate).
1, concentrated sulfuric acid 180g / l, commercial additive 10ml / l
The liquid temperature was 25 ° C., the current density was 5 A / dm 2 , and the plating thickness (height) was 60 μm so that the bumps protruded from the polyimide tape material.

【0077】大気圧中で通常の浸漬方式による脱脂処理
を行った場合、微細孔内に脱脂処理液が均一に浸入しな
いため、脱脂処理液に対する濡れ性が悪い微細孔が発生
し、後工程のめっき工程おいて、微細孔におけるめっき
析出不良が観察されていた。
When the degreasing treatment is carried out by the ordinary immersion method at atmospheric pressure, the degreasing liquid does not uniformly penetrate into the fine pores. In the plating step, poor plating deposition in the fine holes was observed.

【0078】これに対して、実施例1のめっき膜形成方
法の場合、減圧環境下で絶縁テープ材に脱脂処理液を噴
射することで、全ての微細孔内に脱脂処理液が均一に浸
入し、全ての微細孔において脱脂処理液に対する濡れ性
が良好となる。このため、後工程のめっき工程おいて、
微細孔におけるめっき析出不良は全く観察されなかっ
た。
On the other hand, in the case of the plating film forming method of Example 1, the degreasing treatment liquid is sprayed onto the insulating tape material under a reduced pressure environment, so that the degreasing treatment liquid uniformly penetrates into all the fine holes. In addition, the wettability to the degreasing treatment liquid is improved in all the micropores. Therefore, in the subsequent plating step,
No poor plating deposition in the micropores was observed.

【0079】(実施例2)実施例1と同様にして作製し
た絶縁テープ材に対して、図2に示しためっき膜形成装
置を用いて表面処理を行った。
Example 2 A surface treatment was performed on the insulating tape material manufactured in the same manner as in Example 1 using the plating film forming apparatus shown in FIG.

【0080】ここで、電気銅めっき槽内の圧力は1.6
×104 Pa(120Torr=0.16気圧) であ
り、めっき処理以外の表面処理は全て大気解放下(大気
圧中)で行った。酸洗槽における酸としては硫酸を、め
っき液としては硫酸銅浴を用いた。
Here, the pressure in the electrolytic copper plating tank was 1.6.
× 10 4 Pa (120 Torr = 0.16 atm), and all surface treatments except the plating treatment were performed in the open to the atmosphere (at atmospheric pressure). Sulfuric acid was used as an acid in the pickling tank, and a copper sulfate bath was used as a plating solution.

【0081】めっきは減圧雰囲気下のノズル噴射による
電気銅めっきを行い、めっき液の組成は、硫酸銅(5水
和物)が90g/l、濃硫酸が180g/l、市販添加
剤が10ml/lであり、液温は25℃、電流密度は5
A/dm2 、めっき厚さ(高さ)はポリイミドテープ材
からバンプが突出するように60μmとした。
The plating was performed by electrolytic copper plating by nozzle injection under a reduced pressure atmosphere. The composition of the plating solution was 90 g / l of copper sulfate (pentahydrate), 180 g / l of concentrated sulfuric acid, and 10 ml / l of a commercially available additive. l, the liquid temperature is 25 ° C, and the current density is 5
A / dm 2 and the plating thickness (height) were set to 60 μm so that the bumps protruded from the polyimide tape material.

【0082】大気圧中で通常の浸漬方式による電気銅め
っきを行った場合、めっき時の副反応で発生する水素ガ
スが微細孔内から十分に除去されず、微細孔内に気泡と
して存在しているため、めっきで完全に埋まらない微細
孔が多く発生し、微細孔におけるめっき析出不良が観察
されていた。
When the electrolytic copper plating is carried out by the ordinary immersion method under the atmospheric pressure, hydrogen gas generated by the side reaction at the time of plating is not sufficiently removed from the inside of the fine holes, and hydrogen gas is present in the fine holes as bubbles. Therefore, many micropores that are not completely filled by plating are generated, and poor plating deposition in the micropores has been observed.

【0083】これに対して、実施例2のめっき膜形成方
法の場合、減圧環境下で絶縁テープ材にめっき液を噴射
することで、微細孔内からの気泡の泡離れが良好とな
る。このため、微細孔におけるめっき析出不良は全く観
察されなかった。
On the other hand, in the case of the plating film forming method of Example 2, by spraying the plating solution onto the insulating tape material under a reduced pressure environment, the bubbles can be well separated from the inside of the fine holes. For this reason, no plating deposition failure in the fine holes was observed at all.

【0084】本発明は、TABテープ(電子装置用配線
基板)50における微細孔内の表面処理に限定するもの
ではなく、例えば、KGD(Known Good Die)検査のた
めの接触用突起をめっき法で形成する場合にも応用する
ことができる。すなわち、厚膜のドライフィルムレジス
トにフォトファブリケーンョンを施して微細孔を形成
し、その微細孔に対して厚付けめっきを行い、その後、
レジストを剥膜して接触用突起を形成する際において、
厚付けめっき工程に本発明を適用することができる。
The present invention is not limited to the surface treatment in the fine holes in the TAB tape (wiring board for electronic device) 50. For example, the contact protrusion for KGD (Known Good Die) inspection is formed by plating. It can be applied to the case of forming. That is, photofabrication is performed on a thick dry film resist to form fine holes, and the fine holes are subjected to thick plating, and thereafter,
When removing the resist to form the contact protrusions,
The present invention can be applied to a thick plating process.

【0085】また、本発明は、電子装置用半導体ウェハ
における微細孔内の表面処理を行う場合などにも応用す
ることができる。例えば、半導体ウェハの半導体デバイ
スのアルミパッド上にTAB接続のための金突起をめっ
きにより形成する際に、本発明を適用することで、半導
体ウェハ表面に形成された厚付けフォトレジストの微細
孔に対して、表面処理を良好に行うことができる。
The present invention can also be applied to the case of performing a surface treatment in a fine hole in a semiconductor wafer for an electronic device. For example, when forming a gold projection for TAB connection on an aluminum pad of a semiconductor device of a semiconductor wafer by plating, by applying the present invention, a fine hole of a thick photoresist formed on the surface of the semiconductor wafer is formed. On the other hand, surface treatment can be performed favorably.

【0086】さらに、最近、電子装置用半導体ウェハ上
の半導体回路配線を、従来のアルミ配線から銅配線に代
えることが検討されており、この銅配線の形成方法とし
ては電気めっき法による成膜が良好と考えられている。
ここで、半導体ウェハ上に半導体回路配線をめっきによ
り形成する際に、本発明を適用することで、配線基板や
アルミパッド上の微細孔とは比較にならない位の小さな
開口部(開口径1μm以下) に対して、良好にめっき処
理を行うことができる。
Further, recently, it has been studied to replace a semiconductor circuit wiring on a semiconductor wafer for an electronic device with a copper wiring from a conventional aluminum wiring, and as a method for forming the copper wiring, a film formation by an electroplating method is used. Considered good.
Here, when the semiconductor circuit wiring is formed on the semiconductor wafer by plating, by applying the present invention, a small opening (an opening diameter of 1 μm or less) which cannot be compared with the fine hole on the wiring board or the aluminum pad. ) Can be satisfactorily plated.

【0087】[0087]

【発明の効果】以上要するに本発明によれば、微細孔ま
たは溝を有する被めっき膜形成材に対する表面処理を、
減圧雰囲気下で、かつ、処理槽内の被めっき膜形成材に
噴射ノズルを介して処理液の噴射を行うことで、微細孔
または溝内に処理液が均一に浸入し、微細孔または溝に
おけるめっき膜の成膜性が良好となるという優れた効果
を発揮する。
In summary, according to the present invention, the surface treatment for the material to be plated having fine holes or grooves is performed by:
Under a reduced pressure atmosphere, and by injecting the processing liquid through the injection nozzle to the plating film forming material in the processing tank, the processing liquid uniformly penetrates into the fine holes or grooves, and An excellent effect that the film formability of the plating film is improved is exhibited.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の微細孔または溝のめっき膜形成装置の
概略図である。
FIG. 1 is a schematic view of an apparatus for forming a plating film having fine holes or grooves according to the present invention.

【図2】第1の実施の形態の微細孔または溝のめっき膜
形成装置の概略図である。
FIG. 2 is a schematic view of an apparatus for forming a plating film of fine holes or grooves according to the first embodiment.

【図3】図2におけるめっき槽の拡大図である。FIG. 3 is an enlarged view of a plating tank in FIG.

【図4】第2の実施の形態の微細孔または溝のめっき膜
形成装置の概略図である。
FIG. 4 is a schematic diagram of an apparatus for forming a plated film of micro holes or grooves according to a second embodiment.

【図5】本発明の微細孔または溝のめっき膜形成方法の
フローである。
FIG. 5 is a flowchart of a method for forming a plating film of a fine hole or groove according to the present invention.

【符号の説明】[Explanation of symbols]

2 絶縁テープ材(被めっき膜形成材) 4,24 脱脂処理槽 6,26 めっき処理槽 16a,16b 脱脂処理液噴射ノズル 36a,36b めっき液噴射ノズル 50 TABテープ(電子装置用配線基板) 52 微細孔または溝 LD 脱脂処理液(処理液) LM めっき液(処理液)2 Insulating tape material (Plating film forming material) 4,24 Degreasing tank 6,26 Plating tank 16a, 16b Degreasing liquid jet nozzle 36a, 36b Plating liquid jet nozzle 50 TAB tape (wiring board for electronic device) 52 Fine Hole or groove L D Degreasing solution (Treatment solution) L M Plating solution (Treatment solution)

───────────────────────────────────────────────────── フロントページの続き (72)発明者 御田 護 茨城県日立市助川町3丁目1番1号 日立 電線株式会社電線工場内 (72)発明者 浦尾 亮一 茨城県ひたちなか市市毛上坪631−17 Fターム(参考) 4K024 AA09 AB01 AB08 BA09 BA11 BB11 BB12 BC01 CA16 CB01 CB13 CB18 CB26 DA03 DA04 DB10 GA16 4M104 BB04 BB09 DD52 DD53 HH13 5E317 AA24 BB03 BB12 CC33 CC42 CD01 CD03 CD11 CD32 GG16 5E346 AA02 AA05 CC02 CC08 CC10 CC32 CC54 CC60 DD02 DD24 DD32 GG02 GG13 GG16 HH33 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor: Mamoru Mita 3-1-1, Sukekawa-cho, Hitachi City, Ibaraki Prefecture Inside the cable plant of Hitachi Cable Co., Ltd. 17 F-term (reference) 4K024 AA09 AB01 AB08 BA09 BA11 BB11 BB12 BC01 CA16 CB01 CB13 CB18 CB26 DA03 DA04 DB10 GA16 4M104 BB04 BB09 DD52 DD53 HH13 5E317 AA24 BB03 BB12 CC33 CC42 CD01 CD03 CD11 CC32 A CC02 CC10 CC32 CC02 CC10 DD02 DD24 DD32 GG02 GG13 GG16 HH33

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 微細孔または溝を有する被めっき膜形成
材に、脱脂処理、酸洗処理、めっき処理、および水洗処
理を施してめっき膜を形成する方法において、上記被め
っき膜形成材を減圧雰囲気に保つと共に、被めっき膜形
成材に処理液を吹付けながらめっき等の処理を行うこと
を特徴とする微細孔または溝のめっき膜形成方法。
1. A method for forming a plating film by subjecting a material to be plated having fine holes or grooves to a degreasing treatment, an acid washing treatment, a plating treatment, and a water washing treatment, wherein the plating film forming material is depressurized. A method for forming a plating film having fine holes or grooves, characterized in that a treatment such as plating is performed while maintaining an atmosphere and spraying a processing solution onto a material for forming a film to be plated.
【請求項2】 微細孔または溝を有する被めっき膜形成
材に、脱脂処理、酸洗処理、めっき処理、および水洗処
理を施してめっき膜を形成する方法において、上記被め
っき膜形成材を減圧雰囲気に保つと共に、被めっき膜形
成材に脱脂処理液を吹付けながら脱脂処理を行った後、
酸洗処理を行い、その後、被めっき膜形成材を減圧雰囲
気に保つと共に、被めっき膜形成材にめっき液を吹付け
ながらめっき処理を行うことを特徴とする微細孔または
溝のめっき膜形成方法。
2. A method for forming a plating film by subjecting a material to be plated having fine holes or grooves to a degreasing treatment, an acid washing treatment, a plating treatment, and a water washing treatment, wherein the plating film forming material is depressurized. After performing the degreasing treatment while spraying the degreasing treatment liquid on the plating film forming material while maintaining the atmosphere,
A method of forming a plating film for micro-holes or grooves, wherein the plating material is subjected to an acid pickling process, and thereafter, the plating material is kept in a reduced pressure atmosphere, and the plating process is performed while spraying a plating solution onto the plating material. .
【請求項3】 上記処理液を予め脱気しておき、その
後、上記被めっき膜形成材に処理液を吹き付ける請求項
1又は請求項2記載の微細孔または溝のめっき膜形成方
法。
3. The method according to claim 1, wherein the treatment liquid is degassed in advance, and then the treatment liquid is sprayed on the material to be plated.
【請求項4】 微細孔または溝を有する被めっき膜形成
材に、脱脂処理、酸洗処理、めっき処理、および水洗処
理を施してめっき膜を形成する装置において、減圧雰囲
気に保たれた処理槽内に、その処理槽内に導入された被
めっき膜形成材の表面に処理液を吹き付けるための吹付
けノズルを1個または複数設けたことを特徴とする微細
孔または溝のめっき膜形成装置。
4. An apparatus for forming a plating film by subjecting a material to be plated having fine holes or grooves to a degreasing treatment, an acid washing treatment, a plating treatment, and a water washing treatment, wherein the treatment tank is maintained at a reduced pressure atmosphere. Wherein one or a plurality of spray nozzles for spraying a processing solution onto the surface of the material to be plated introduced into the processing bath are provided therein.
【請求項5】 微細孔または溝を有する被めっき膜形成
材に、脱脂処理、酸洗処理、めっき処理、および水洗処
理を施してめっき膜を形成する装置において、減圧雰囲
気に保たれた脱脂処理槽およびめっき処理槽内に、その
脱脂処理槽およびめっき処理槽内に導入された被めっき
膜形成材の表面に脱脂処理液およびめっき液を吹き付け
るための1個または複数の吹付けノズルを設けたことを
特徴とする微細孔または溝のめっき膜形成装置。
5. An apparatus for forming a plating film by subjecting a material to be plated having fine holes or grooves to a degreasing treatment, an acid washing treatment, a plating treatment, and a water washing treatment, wherein the degreasing treatment is performed under a reduced pressure atmosphere. One or a plurality of spray nozzles for spraying a degreasing treatment liquid and a plating solution on the surface of the plating film forming material introduced into the degreasing treatment tank and the plating treatment tank are provided in the tank and the plating treatment tank. An apparatus for forming a plating film having fine holes or grooves.
【請求項6】 上記処理液を上記吹付けノズルに供給す
るための貯留タンクに、真空ポンプを接続した請求項4
又は請求項5記載の微細孔または溝のめっき膜形成装
置。
6. A vacuum pump is connected to a storage tank for supplying the processing liquid to the spray nozzle.
6. A plating film forming apparatus for micro holes or grooves according to claim 5.
【請求項7】 微細孔または溝を有する配線基板に、脱
脂処理、酸洗処理、めっき処理、および水洗処理を施
し、配線基板表面にめっき膜を形成してなる電子装置用
配線基板において、減圧雰囲気に保たれた上記配線基板
に処理液を吹き付けながらめっき等の処理を行ったこと
を特徴とする微細孔または溝のめっき膜形成方法を用い
た電子装置用配線基板。
7. An electronic device wiring board in which a wiring board having fine holes or grooves is subjected to a degreasing treatment, an acid washing treatment, a plating treatment, and a water washing treatment to form a plating film on the surface of the wiring board. A wiring board for an electronic device using a method for forming a plating film of fine holes or grooves, wherein a processing such as plating is performed while spraying a processing solution onto the wiring board kept in an atmosphere.
【請求項8】 微細孔または溝を有する半導体ウェハ
に、脱脂処理、酸洗処理、めっき処理、および水洗処理
を施し、半導体ウェハ表面にめっき膜を形成してなる電
子装置用半導体ウェハにおいて、減圧雰囲気に保たれた
上記半導体ウェハに処理液を吹き付けながらめっき等の
処理を行ったことを特徴とする微細孔または溝のめっき
膜形成方法を用いた電子装置用半導体ウェハ。
8. A semiconductor wafer for an electronic device in which a semiconductor wafer having fine holes or grooves is subjected to degreasing, pickling, plating, and water washing to form a plating film on the semiconductor wafer surface. A semiconductor wafer for an electronic device using a method for forming a plating film of fine holes or grooves, characterized in that processing such as plating is performed while spraying a processing solution onto the semiconductor wafer kept in an atmosphere.
JP13619499A 1999-05-17 1999-05-17 Formation of plating film on micropore or groove and its forming device Pending JP2000328288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13619499A JP2000328288A (en) 1999-05-17 1999-05-17 Formation of plating film on micropore or groove and its forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13619499A JP2000328288A (en) 1999-05-17 1999-05-17 Formation of plating film on micropore or groove and its forming device

Publications (1)

Publication Number Publication Date
JP2000328288A true JP2000328288A (en) 2000-11-28

Family

ID=15169550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13619499A Pending JP2000328288A (en) 1999-05-17 1999-05-17 Formation of plating film on micropore or groove and its forming device

Country Status (1)

Country Link
JP (1) JP2000328288A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006249530A (en) * 2005-03-11 2006-09-21 Fujitsu Ltd Method for forming pattern made of metallic film
WO2012164872A1 (en) * 2011-05-27 2012-12-06 上村工業株式会社 Plating method
CN113737264A (en) * 2021-09-22 2021-12-03 中国计量大学 Micropore pretreatment and electroplating integrated device and method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006249530A (en) * 2005-03-11 2006-09-21 Fujitsu Ltd Method for forming pattern made of metallic film
JP4685478B2 (en) * 2005-03-11 2011-05-18 富士通株式会社 Method for forming metal film pattern
WO2012164872A1 (en) * 2011-05-27 2012-12-06 上村工業株式会社 Plating method
JP2012248662A (en) * 2011-05-27 2012-12-13 C Uyemura & Co Ltd Plating method
CN103493609A (en) * 2011-05-27 2014-01-01 上村工业株式会社 Plating method
US9730337B2 (en) 2011-05-27 2017-08-08 C. Uyemura & Co., Ltd. Plating method
KR101913882B1 (en) * 2011-05-27 2018-10-31 우에무라 고교 가부시키가이샤 Plating method
CN113737264A (en) * 2021-09-22 2021-12-03 中国计量大学 Micropore pretreatment and electroplating integrated device and method

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