JP2000327491A - Inorganic compound thin film, magnetic recording medium and magnetic recorder - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the distribution of the crystal grain sizes of a magnetic recording film formed on a thin film by forming the thin film in such a manner that the thin film has a honeycomb structure which is regular hexagonal in the crystal portions of the thin film and is regularly arrayed with the crystal particles two-dimensionally in a direction parallel to a substrate and that the structure and texture of the aggregate of the crystal particles consist of the aggregate of a geometrically self-analogous shape. SOLUTION: Preferably the texture of the inorganic compound thin film is columnar and the form of the aggregate of the crystal particles has a flactal property. The materials of the crystalline portions are preferably >=1 kinds among cobalt oxide, nickel oxide and iron oxide. The amorphous material enclosing the crystalline material is preferably >=1 kinds among silicon oxide, aluminum oxide, zinc oxide, titanium oxide and tantalum oxide. The magnetic thin film is epitaxially grown in the inorganic compound thin film from the crystal particle portions. The regulation of the distribution of the crystal particle sizes of the magnetic recording film for magnetic recording media is made possible and the noise and thermal fluctuation of a magnetic disk may be lessened.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an information recording apparatus for recording, reproducing and erasing information, and more particularly, to an information recording apparatus for recording information at 20 Gb / inc.
greater than h ² on the structure of the magnetic disk and the magnetic recording medium used for magnetic recording apparatus capable of recording extra-high density information.

[0002]

2. Description of the Related Art In recent years, there has been a remarkable progress in the advanced information society, and multimedia in which various forms of information are integrated has rapidly spread. One of the information recording devices that support this is a magnetic disk device. At present, the magnetic disk drive is being downsized while improving the recording density. At the same time, the cost of disk devices has been rapidly reduced. By the way, in order to realize the high density of the magnetic disk, 1) shorten the distance between the disk and the magnetic head, 2) increase the coercive force of the medium,
3) It is an essential technology to devise a signal processing method.

[0003] Above all, in a magnetic recording medium, an increase in coercive force is indispensable in order to realize high-density recording. In addition, in order to achieve a recording density exceeding 10 Gb / in ² , the unit in which magnetization reversal occurs must be reduced. For that purpose, it is necessary to reduce the size of the magnetic particles. Further, it has become important to reduce the size distribution of the magnetic particles while minimizing the size distribution of the magnetic particles from the viewpoint of thermal fluctuation. As a method for realizing these, it has been proposed to provide a seed thin film under the magnetic film. One example is USP-4652499.

[0004]

In the above prior art,
The crystal grain size of the magnetic recording medium is reduced by using a metal thin film as a base film to suppress the grain size distribution. However, as a result, in order to realize the recording density exceeding 10Gb / in ² is not necessarily sufficient for the distribution of the particle size is reduced thermal fluctuation or noise, in particular, thermal fluctuation for small magnetic particles Conversely, large particles may cause noise when driven as an apparatus.

Accordingly, a first object of the present invention is to form a recording film on an inorganic compound thin film having a two-dimensional honeycomb structure and having a fractal property,
It is possible to suppress the crystal grain size distribution of a magnetic recording film for a magnetic recording medium, reduce noise and thermal fluctuation of a magnetic disk, and use a magnetic disk capable of recording at an ultra-high density and the disk. An object of the present invention is to provide a magnetic recording device. A second object of the present invention is to provide a material in which the crystal grains of the manufactured magnetic recording medium have a regular arrangement reflecting the shape of the underlayer, and reduce noise in the magnetic recording device. A third object of the present invention is to provide a magnetic recording medium in which the corrosion resistance of the magnetic film of the magnetic recording medium is improved by suppressing the distribution of crystal grain size of the magnetic recording film for the magnetic recording medium. An object of the present invention is to provide a magnetic disk having reliability.

[0006]

In order to achieve the above object, an inorganic compound thin film having at least a crystalline portion and an amorphous region surrounding the crystalline portion is used.
The shape of the crystalline part of the inorganic compound thin film is a regular hexagon,
Further, it is preferable to use a material having a honeycomb structure in which the crystalline particles are regularly arranged two-dimensionally in a direction parallel to the substrate. In addition, it is preferable that the inorganic compound thin film is a thin film of a material having a structure in which the structure and texture of the aggregate of crystal particles are geometrically composed of an aggregate of self-similar figures. When the inorganic compound thin film is observed from a direction perpendicular to the substrate, the structure of the inorganic compound thin film is most preferably a columnar structure. Furthermore, in this inorganic compound thin film, the aggregate formed by crystal grains forms a self-similar figure geometrically in the direction parallel to the substrate, so that the aggregate of crystal grains becomes fractal. It is preferable to have And to express the fractality, the topological dimensions: dim _T and Hau
sdrorff dimension (real number dimension function): The relationship of dim _H is dim _T <di
represented by m _H. In an inorganic compound thin film, since an aggregate of crystal particles has fractal properties, the distance between crystal particles in an amorphous substance that surrounds the crystal particles must be constant. Moreover, the distance
Most preferably, it is 0.5 nm or more and 2 nm or less. 0.
If the thickness is 5 nm or less and 2 nm or more, the fractal properties of the structure and the structure of the inorganic compound thin film are lost, which is not preferable. Among the dimensions representing the fractal properties of the structure and the structure of the inorganic compound thin film, the value is preferably 2 in the phase dimension: dim _T. In this inorganic compound thin film, the material of the crystalline portion is at least one compound selected from cobalt oxide, nickel oxide, or iron oxide, and the amorphous material surrounding the crystalline is silicon oxide, Most preferably, it is at least one compound selected from aluminum oxide, chromium oxide, zirconium oxide, zinc oxide, titanium oxide, and tantalum oxide.

On the inorganic compound thin film having the above-described structure, a magnetic thin film is grown epitaxially from crystal grain portions of the inorganic compound thin film, and the structure or the structure of the thin film is the same as that of the inorganic compound thin film. It is preferable to control with an inorganic compound thin film so as to have the same form. As described above, in the magnetic film grown from the inorganic compound thin film, the magnetic characteristics of the magnetic film corresponding to the crystalline portion of the inorganic compound thin film and the magnetic characteristics of the magnetic film corresponding to the amorphous portion are different. By having magnetism and having different magnetism, magnetic interaction between magnetic particles in a portion corresponding to a crystalline portion can be reduced. Here, as a specific material to be used, Co
It is preferable to use an alloy material containing at least one element selected from Pt, Ta, Cr, Ti, Si, Nb, and Pd. More specifically, the above-described magnetic particles mainly containing Co are epitaxially grown from the crystalline particles of the inorganic compound thin film. Furthermore, depending on the material used, epitaxial growth may not be possible because the lattice constant of the magnetic film is different from the crystalline lattice constant of the inorganic compound layer. In order to solve this problem, in order to epitaxially grow Co-based magnetic particles from the crystalline particles in the inorganic compound thin film, the lattice spacing of the crystalline particles in the inorganic compound thin film and the Co-based magnetic particles were reduced. When the lattice spacing differs by 10% or more, an alloy layer mainly containing Cr and containing at least one element selected from Ta, Ti, Si, Nb, Mo, W, Ru, and V By providing between the inorganic compound layer and the magnetic layer, the difference in lattice spacing can be reduced.
It can be solved by setting it to less than 10%. In addition, by forming the inorganic compound thin film, the difference in the magnetic properties generated in the magnetic film corresponding to the crystalline portion and the amorphous portion in the inorganic compound thin film includes the magnetic anisotropy, saturation magnetization, and coercive force. Preferably, it is at least one type of magnetism selected.

The magnetic recording medium manufactured in this manner may be formed on a glass or Al or Al alloy substrate and formed into a disk shape. A magnetic disk device including the magnetic disk, a driving device, a magnetic head, and an electronic circuit is configured, and a user records information on a magnetic recording medium using the magnetic disk device. In this case, it is sufficient that the magnetic disk has an area for recording by the user and information is recorded in the area. By the way, as information to be recorded on the magnetic disk device, it is preferable to record at least one type of information selected from music, images, and numerical data.
By the way, when information is recorded on a magnetic recording medium in an area where a user can record information by using a magnetic disk device, the unit of magnetization reversal in the magnetic recording medium must be the same as the magnetic crystal grain size or at most three times. Is preferred.
This is because, in a magnetic recording device, the areal recording density: 20 Gb / in ²
It is indispensable to realize a recording density exceeding.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION

[0010]

EXAMPLES The present invention will be described in more detail with reference to Examples.

(Embodiment 1) In this embodiment, a magnetic film is formed after forming an inorganic compound thin film containing fractal crystal grains constituting a self-similar figure of the present invention on a disk substrate. is there.

FIG. 1 shows a schematic view of the cross-sectional structure of the magnetic disk substrate thus manufactured. A glass substrate was used as the substrate (1), and an inorganic compound thin film containing fractal crystalline particles constituting a self-similar figure was formed thereon as an inorganic compound thin film (2) by a sputtering method. The material used was CoO-Si
Using an O ₂ mixture (mixing ratio; CoO: SiO ₂ = 3: 1) as a target,
Ar was used for the discharge gas. ECR (Electron Cyclotron Resonance) sputtering was used as the sputtering method. Microwave power 1.25GHz, discharge gas pressure 5mTor
r. The crystal structure of the obtained inorganic compound thin film (2) was examined by an X-ray diffraction method. The result is shown in FIG. From this figure, a peak due to CoO 220 was obtained around 2θ = 62.5 °. In addition, the structure of this film was examined using a transmission electron microscope (TEM).
Was observed. FIG. 3 shows a schematic diagram of the obtained result.
First, from a planar observation, the surface of the magnetic film had a so-called honeycomb structure in which regular hexagonal particles were regularly arranged two-dimensionally. In this structure, an inorganic compound film having a desired structure can be obtained by controlling film forming conditions and composition. Furthermore, when the crystal grains and their grain boundaries were analyzed by μ-EDX, the crystal grains were oxides of Co (solute substances),
At the grain boundary was SiO ₂ (solvent substance).
Focusing on the method of arranging the inorganic compound film, it is an aggregate of regular hexagonal crystal particles.
It can be seen that a self-similar figure as shown in FIG. This form will be outlined from a fractal point of view. When the fractal property is represented by a top dimension: dim _T and a Hausdrorff dimension (real number dimension function): dim _H , the relationship between the numerical values is represented by dim _T <dim _H. Here, dim _T is 2 because it is a two-dimensional plane, dim _H is dim _H ≤ n (here, n = 2), and dim _T <dim _H
It can be seen that it is. As described above, since the aggregate of crystal particles in the inorganic compound thin film has fractal properties, the distance between the crystal particles is constant at 1.5 nm even in the amorphous substance surrounding the crystal particles. Therefore, the fractal properties of the structure and the structure of the inorganic compound thin film are not lost. Here, the distance between crystal grains is 0.5
If it is less than nm, or conversely, if it exceeds 2 nm, the fractal properties of the inorganic compound thin film structure and tissue will be lost,
The thickness of the amorphous phase (grain boundary phase) must be controlled within a certain range. In the above experiment, CoO and S
Although a mixture with iO ₂ was used after sintering, a mixture obtained by sintering each of these compounds alone may be used as a target to form a film by binary simultaneous sputtering. It does not depend on the type. In this embodiment, an inorganic compound thin film is formed on a glass substrate. In the example shown in this embodiment, glass is used for the substrate, but the effect does not depend on the material of the substrate. It goes without saying that a metal substrate of Al or an Al alloy or a plastic substrate of polycarbonate or amorphous polyolefin may be used.

It is most preferable to use the substrate obtained as described above, on which an inorganic compound thin film is formed, as a substrate for information recording, in particular, a substrate for magnetic disks and optical disks.

(Embodiment 2) In this embodiment, a magnetic film is formed on the inorganic compound thin film (2) prepared in Embodiment 1 using a substrate formed on a glass substrate (1). is there.

FIG. 5 shows a schematic view of the cross-sectional structure of the magnetic disk thus manufactured. As the magnetic film (3), a Co ₆₉ Cr ₁₉ Pt ₁₂ film
A film having a thickness of nm was formed on the substrate manufactured according to Embodiment 1 by DC sputtering. During fabrication of the magnetic film, the substrate was kept at 300 ° C.
Heated. A Co-Cr-Pt alloy was used for the target, and pure Ar was used for the discharge gas. The pressure during sputtering is 3m
Torr. The input DC power is 1kW / 150mmφ. A C film was formed thereon as a protective film (4) to a thickness of 5 nm.
The sputtering conditions were as follows: the input DC power density was 1 kW / 150 mmφ,
The discharge gas pressure is 5 mTorr. Here, Ar is used as the sputtering gas, but it goes without saying that a gas containing nitrogen may be used. This is because the particles obtained are finer, the resulting film is denser, and the protection performance can be improved. As for the film quality of this film, in addition to such a sputtering method, since the properties of the obtained film greatly depend on the apparatus, these conditions and methods are not absolute.

Next, when the structure of this magnetic film was examined by TEM observation, it had a honeycomb structure reflecting the structure and shape of the inorganic compound thin film. When the crystal grains were examined by observing the plane with an electron microscope, 250 crystal grains were found to have an average particle diameter of 10 nm. The particle diameter distribution was found to be 1 nm or less in standard deviation: σ. The particle size distribution was close to the limit of TEM resolution. As described above, it was found that the particles of the magnetic film were fine and had a small size distribution, which was the same as that of the inorganic compound thin film. Naturally, the particle shape of the magnetic film (3) had the same two-dimensionally regular honeycomb structure as the inorganic compound thin film. Naturally, the form of the magnetic film has fractal properties. This indicates that the magnetic crystal particles having a uniform hexagonal shape are regularly and continuously arranged two-dimensionally from the inorganic compound thin film layer (honeycomb structure). Observation of the cross section by TEM revealed that between the inorganic compound thin film (2) and the magnetic film layer (3),
A lattice connection was observed, indicating that the magnetic film was epitaxially grown from the inorganic compound thin film. In addition, it was found that the growth mechanism of the magnetic film was different between the crystal phase and the grain boundary phase, and had different metal structures. In particular, a good columnar structure was grown from the crystal grains of the inorganic compound, but no clear structure was observed from the grain boundary phase. Such a tissue is known to exhibit non-magnetic behavior. X-rayally, a peak is observed around 2θ = 62.5 °,
Considering the TEM observation results, this peak
2) was found to be strongly oriented.

The magnetic properties of the magnetic film were measured. The obtained magnetic properties are as follows: coercive force is 3.5 kOe, Isv is 2.5 × 10 ^-16 em
u, S, which is an index of the squareness of the hysteresis in the MH loop, were 0.8 and S † were 0.86, indicating good magnetic properties. As described above, the index indicating the squareness is large (close to the square shape) because the growth mechanism of the magnetic film is different reflecting the grain boundary layer of the inorganic compound thin film, and the interaction between the magnetic crystal grains is different. Is reduced. Observation of this magnetic film with a scanning magnetic force microscope (MFM) revealed that the magnetic characteristics of the crystal grain portion of the magnetic film were different from those of the grain boundary portion. In the crystal grain boundary portion, the coercive force and the magnetic anisotropy sharply decreased.

Next, a lubricant was applied to the medium surface of a magnetic disk using a magnetic film having such magnetic characteristics, and the recording / reproducing characteristics of the disk were evaluated. As shown in FIG. 6, the manufactured magnetic disk device includes a magnetic disk (51), a magnetic head (53), a spindle motor (52), and an actuator (54) for driving the magnetic head. Records include 2.
The recording head was a magnetic head using a soft magnetic film having a high saturation magnetic flux density of 1T. Reproduction was performed by a head having a giant magnetoresistance effect. The distance between the head surface and the magnetic film is 20 nm. A signal equivalent to 40 GB / inch ² was recorded on this disk and the S / N of the disk was evaluated.
Was obtained. Here, when the magnetization reversal unit was measured by a magnetic force microscope (MFM), the magnetization reversal unit was:
It was about 3 particles from 2 and was found to be sufficiently small. At the same time, the zigzag pattern existing in the magnetization transition region was significantly smaller than that of the conventional medium. In addition, thermal fluctuation and demagnetization due to heat did not occur. This is because the distribution of the crystal grain size of the magnetic film is small. When the defect rate of this disk was measured, the value was 1 × 10 ⁻⁵ or less when no signal processing was performed.

Here, an example was described in which a thin film for controlling a crystalline lattice constant was formed on a glass substrate. However, a substrate was manufactured using the material on which the thin film was formed, and a magnetic film was formed thereon. It goes without saying that it may be formed. In this example, an example using cobalt oxide as a solute substance was described.
The same effect was obtained by using chromium oxide, iron oxide or nickel oxide. Furthermore, although silicon oxide was used as the oxide of the solvent, similar results were obtained by using aluminum oxide, titanium oxide, tantalum oxide, or zinc oxide. Here, when a mixture of silicon oxide and zinc oxide is used as a solvent molecule, the distance between crystal grains can be controlled by the mixture ratio.

Embodiment 3 In this embodiment, the lattice spacing of the crystalline portion of the inorganic compound thin film formed on the glass substrate is different from the lattice spacing of the magnetic film formed thereon by 10% or more.
This is a case where an intermediate layer is provided between the two.

FIG. 7 shows a schematic diagram of the cross-sectional structure of the magnetic disk thus manufactured. First, Cr ₈₅ Ti ₁₅ as a metal intermediate film (5) was formed to a thickness of 30 nm on the substrate prepared in Example 1. Co ₆₉ Cr ₁₇ Pt ₁₀ Ta ₄
The film was formed to a thickness of 15 nm by DC sputtering. The substrate was heated to 300 ° C. during the production of the magnetic film. C for target
An o-Cr-Pt-Ta alloy was used, and pure Ar was used as a discharge gas. The pressure during sputtering is 3 mTorr. Input DC power is
1kW / 150mmφ. A C film was formed thereon as a protective film (4) to a thickness of 5 nm. The sputtering conditions are:
The C power density is 1 kW / 150 mmφ and the discharge gas pressure is 5 mTorr. Here, Ar is used as the sputtering gas, but it goes without saying that a gas containing nitrogen may be used. This is because, because the particles are finer, the resulting film is denser,
This is because the protection performance can be improved. As for the film quality of this film, in addition to such a sputtering method, since the properties of the obtained film greatly depend on the apparatus, these conditions and methods are not absolute.

Next, when the structure of this magnetic film was examined by TEM observation, it had a honeycomb structure reflecting the structure and shape of the inorganic compound thin film. When the crystal grains were examined by observing the plane with an electron microscope, 250 crystal grains were found to have an average particle diameter of 10 nm. The particle diameter distribution was found to be 1 nm or less in standard deviation: σ. The particle size distribution was close to the limit of TEM resolution. As described above, it was found that the particles of the magnetic film were fine and had a small size distribution, which was the same as that of the inorganic compound thin film. Naturally, the particle shape of the magnetic film (3) had the same two-dimensionally regular honeycomb structure as the inorganic compound thin film. Naturally, the form of the magnetic film has fractal properties. This indicates that the magnetic crystal particles having a uniform hexagonal shape are regularly and continuously arranged two-dimensionally from the inorganic compound thin film layer (honeycomb structure). When the cross section was observed by TEM, the inorganic compound thin film (2), the metal intermediate film (5) and the magnetic film layer were observed.
A lattice connection was observed with (3), indicating that the magnetic film was epitaxially grown from the inorganic compound thin film via the intermediate film. In the crystal phase and the grain boundary phase,
It was found that the growth mechanism of the magnetic film was different and had different metal structures. In particular, a good columnar structure was grown from the crystal grains of the inorganic compound, but no clear structure was observed from the grain boundary phase. Such a tissue is known to exhibit non-magnetic behavior. X-ray, 2θ = 6
A peak was observed at around 2.5 °, and when considered in conjunction with the TEM observation results, it was found that this peak had Co (102) strongly oriented. Here, the difference in lattice spacing between the magnetic film and the inorganic compound thin film was 15%, and good epitaxial growth was not observed from the crystal grains in the inorganic compound thin film. According to experiments, a difference of 10% or more inhibits epitaxial growth, and more preferably the difference is 5%
It is preferably within the range.

The magnetic properties of the magnetic film were measured. The obtained magnetic properties are as follows: coercive force is 3.5 kOe, Isv is 2.5 × 10 ^-16 em
u, S, which is an index of the squareness of the hysteresis in the MH loop, were 0.8 and S † were 0.86, indicating good magnetic properties. As described above, the index indicating the squareness is large (close to the square shape) because the growth mechanism of the magnetic film is different reflecting the grain boundary layer of the inorganic compound thin film, and the interaction between the magnetic crystal grains is different. Is reduced. Observation of this magnetic film with a scanning magnetic force microscope (MFM) revealed that the magnetic characteristics of the crystal grain portion of the magnetic film were different from those of the grain boundary portion. In the crystal grain boundary portion, the coercive force and the magnetic anisotropy sharply decreased.

Next, a lubricant was applied to the medium surface of a magnetic disk using a magnetic film having such magnetic characteristics, and the recording / reproducing characteristics of the disk were evaluated. For recording, a magnetic head using a soft magnetic film having a high saturation magnetic flux density of 2.1 T was used as the recording head. Reproduction was performed by a head having a giant magnetoresistance effect. The distance between the head surface and the magnetic film is 20nm
It is. When a signal corresponding to 40 GB / inch ² was recorded on this disk and the S / N of the disk was evaluated, a reproduction output of 32 dB was obtained. Here, when the magnetization reversal unit was measured by a magnetic force microscope (MFM), the magnetization reversal unit was
From about three, it was found to be small enough. At the same time, the zigzag pattern existing in the magnetization transition region was significantly smaller than that of the conventional medium. In addition, thermal fluctuation and demagnetization due to heat did not occur. This is because the distribution of the crystal grain size of the magnetic film is small. When the defect rate of this disk was measured, the value was 1 × 10 ⁻⁵ or less when no signal processing was performed.

In the present embodiment, a method has been described in which the difference in lattice spacing between the crystal phase of the magnetic film and the crystal grains of the inorganic compound thin film is corrected by the metal intermediate film. In addition to this method, the same effect can be obtained even if an element having a larger ionic radius than the metal in the crystal phase is caused to penetrate into the crystal phase in the inorganic compound thin film. In the case of this example, the same effect as the Cr—Ti film was obtained by adding about 10 at% of Fe, Ni, or the like to the cobalt oxide in the crystal phase. Similar effects can be obtained by using a transition metal other than Fe and Ni.

[0026]

According to the present invention, by forming a magnetic recording film on an inorganic compound thin film having a two-dimensional honeycomb structure and fractal morphology, the crystal grain size distribution of the magnetic recording film for a magnetic recording medium can be improved. Can be suppressed,
A magnetic disk capable of reducing the noise and thermal fluctuation of the magnetic disk and capable of recording at a very high density, and a magnetic recording device using the disk can be provided. Further, a material in which the crystal grains of the manufactured magnetic recording medium had a regular array reflecting the shape of the underlayer was provided, and noise in the magnetic recording device could be reduced. Furthermore, by providing a magnetic recording medium in which the corrosion resistance of the magnetic film of the magnetic recording medium is improved by suppressing the crystal grain size distribution of the magnetic recording film for the magnetic recording medium, a highly reliable magnetic disk is provided. Could be provided. With the effects described above, it was possible to achieve a recording density exceeding ²⁰ Gb / in ² in the magnetic recording apparatus.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a cross-sectional structure of a magnetic disk base.

FIG. 2 is an X-ray diffraction profile of an inorganic compound thin film.

FIG. 3 is a schematic diagram of observation results of a transmission electron microscope (TEM).

FIG. 4 is a diagram illustrating a self-similar figure.

FIG. 5 is a schematic diagram showing a cross-sectional structure of a magnetic disk.

FIG. 6 is a schematic diagram showing a configuration of a magnetic disk drive.

FIG. 7 is a schematic diagram showing a cross-sectional structure of a magnetic disk.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Inorganic compound film 3 Magnetic film 4 Protective film 51 Magnetic disk disk 52 Spindle motor 53 Magnetic head 54 Magnetic head actuator

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Teruaki Takeuchi 1-1-88 Ushitora, Ibaraki City, Osaka Prefecture Inside Hitachi Maxell Co., Ltd. (72) Koichiro Wakabayashi 1-1-88 Ushitora, Ibaraki City, Osaka Hitachi F-term (reference) in Maxell, Inc. BD03 FA04 5E049 AA04 AA09 AA10 BA06 CB01 CC01 DB04 DB12

Claims (17)

[Claims] 1. An inorganic compound thin film comprising at least a crystalline portion and an amorphous region surrounding the crystalline portion, wherein the shape of the crystalline portion of the inorganic compound thin film is a regular hexagon, and It has a honeycomb structure in which crystalline particles are regularly arranged two-dimensionally in a direction parallel to the substrate, and the crystal particle portions are crystallographically oriented, and the structure and organization of the aggregate of crystal particles are geometric. An inorganic compound thin film characterized in that it is a thin film of a material having a structure composed of an aggregate of self-similar figures. 2. The inorganic compound thin film according to claim 1, wherein the structure of the inorganic compound thin film in a direction perpendicular to the substrate is a columnar structure. 3. The inorganic compound thin film according to claim 1, wherein an aggregate formed by gathering crystal grains of the inorganic compound thin film is geometrically self-similar when viewed from a direction parallel to the thin film formation surface. By forming a figure, the aggregate of the crystal grains has fractal properties, and the fractal properties are represented by the phase dimension: dim _T and the Hausdrorff dimension (real number dimension function): dim _H
Is represented by the following relationship: dim _T <dim _H. 4. The inorganic compound thin film according to claim 1, wherein the distance between the crystal grains is constant and the value of each of the crystal grains is 0.1.
An inorganic compound thin film having a thickness of 5 nm or more and 2 nm or less. 5. The inorganic compound thin film according to claim 1, wherein the crystalline substance is at least one compound selected from cobalt oxide, nickel oxide, and iron oxide, and surrounds the crystalline substance. Wherein the amorphous substance is at least one compound selected from the group consisting of silicon oxide, aluminum oxide, chromium oxide, zirconium oxide, zinc oxide, titanium oxide, and tantalum oxide. 6. The inorganic compound thin film according to claim 3, wherein, among the dimensions representing the fractal property in the structure and the structure of the inorganic compound thin film, a phase dimension: dim _T :
An inorganic compound thin film having a value of 2. 7. The inorganic compound thin film according to claim 1 and a magnetic thin film formed on the inorganic compound thin film, wherein the magnetic thin film is epitaxially grown from crystal grain portions in the inorganic compound thin film, and A magnetic recording medium characterized in that the structure or structure of the magnetic thin film is controlled by the inorganic compound thin film such that the structure or structure of the inorganic compound thin film is more preferably the same as the crystal grains in the inorganic compound thin film. . 8. The magnetic recording medium according to claim 7, wherein a magnetic property of the portion corresponding to the crystalline portion of the inorganic compound thin film and a magnetic property of the portion of the magnetic thin film corresponding to the amorphous portion are different. A magnetic recording medium characterized by having different magnetic properties, and having different magnetic properties, whereby magnetic interaction between magnetic particles in a portion corresponding to a crystalline portion is reduced. 9. The magnetic recording medium according to claim 7, wherein said magnetic thin film is mainly composed of Co, and further comprises Pt, Ta,
A magnetic recording medium comprising at least one element selected from the group consisting of Cr, Ti, Si, Nb, and Pd. 10. The magnetic recording medium according to claim 7, wherein the magnetic thin film epitaxially grown from the crystalline particles in the inorganic compound thin film is the magnetic particle containing Co as the main component according to claim 9. Magnetic recording medium. 11. The magnetic recording medium according to claim 7, wherein the difference between the lattice spacing of crystalline particles in the inorganic compound thin film and the lattice spacing of magnetic particles in the magnetic thin film is less than 10%. A magnetic recording medium characterized by the above-mentioned. 12. The magnetic recording medium according to claim 11, wherein said magnetic thin film is mainly composed of Cr, and is composed of Ta, Ti, Si, and Nb.
By providing an alloy layer containing at least one element selected from among the inorganic compound layer and the magnetic layer, the lattice spacing of the crystalline particles in the inorganic compound thin film and the magnetic particles of the magnetic thin film Of the lattice spacing of
A magnetic recording medium characterized by being less than 10%. 13. The magnetic recording medium according to claim 8, wherein the magnetic properties of the magnetic film corresponding to the crystalline portion and the amorphous portion in the inorganic compound thin film include magnetic anisotropy, saturation magnetization, A magnetic recording medium characterized in that at least one kind of magnetism selected from coercive forces is different. 14. The magnetic recording medium according to claim 7, wherein the magnetic recording medium is formed on a glass or Al alloy substrate and has a disk shape. 15. A magnetic disk device comprising at least the magnetic recording medium according to claim 14, a drive device, a magnetic head, and an electronic circuit, and an area where a user records information is formed on the magnetic recording medium. A magnetic disk drive, comprising: a user having recorded information in the area. 16. The magnetic disk drive according to claim 15, wherein music, music, and the like are stored in an area where the user records information.
A magnetic disk drive in which at least one type of information selected from images and numerical data is recorded. 17. In the case where information is recorded in an area where a user can record information by the device according to claim 15, the magnetization reversal unit in the magnetic recording medium is defined as: A magnetic disk drive characterized in that it has a size equal to or less than three times the size of a magnetic crystal grain.